Polysilicon reduction furnace structure and method of operating the same

By dividing the polycrystalline silicon reduction furnace into an annular power supply heating zone and adopting a combination of rotary and fixed nozzle designs, the temperature and material distribution are optimized in a coordinated manner. This solves the problem of temperature non-uniformity in traditional polycrystalline silicon reduction furnaces, improves the density and purity of polycrystalline silicon, and meets the high-quality requirements of N-type monocrystalline silicon.

CN122215069APending Publication Date: 2026-06-16QINGHAI CSG NEW ENERGY TECHNOLOGY CO LTD +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
QINGHAI CSG NEW ENERGY TECHNOLOGY CO LTD
Filing Date
2026-03-03
Publication Date
2026-06-16

AI Technical Summary

Technical Problem

Traditional polycrystalline silicon reduction furnaces exhibit a significant radial temperature gradient, leading to overheating in the central region and the formation of loose and porous "cauliflower material" or "popcorn material," which affects product purity and single crystal pulling performance. Existing technologies struggle to achieve precise radial temperature control and synergistic optimization of reactant distribution.

Method used

The furnace base of the polysilicon reduction furnace is divided into multiple annular power supply and heating zones, and the temperature of each zone is independently controlled. Combined with the rotating nozzle in the central zone, a swirling flow is formed to push the heat, while the outer ring zone uses fixed nozzles to reduce thermal disturbance. The temperature distribution and material distribution are optimized through zoned power supply and nozzle design.

Benefits of technology

It significantly reduces the temperature difference between the center and the edge, avoids loose silicon deposition caused by local overheating, improves the density and consistency of polycrystalline silicon deposition, enhances product purity and single crystal pulling performance, and reduces the risk of furnace wall deposition.

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Abstract

A polycrystalline silicon reduction furnace structure and a method for operating the same, comprising a furnace body composed of a furnace base and a cover, the furnace base being provided with a plurality of power supply heating zones arranged in a ring shape from the center to the edge of the furnace base; a group of feeding nozzles is correspondingly arranged in each power supply heating zone, the feeding nozzles comprising rotary nozzles and fixed nozzles, the rotary nozzles being installed in the power supply heating zones close to the center of the furnace base, and the fixed nozzles being installed in the power supply heating zones away from the center of the furnace base; and a circle of tail gas exhaust holes is arranged at the edge of the furnace base. The furnace base is divided into a plurality of ring-shaped power supply heating zones, and the temperature of each zone is independently controlled; the rotary nozzles are used in the central region to form a rotational flow to push the heat outward, and the fixed nozzles are used in the outer ring region to reduce thermal disturbance, thereby significantly reducing the temperature difference between the center and the edge and avoiding the deposition of loose silicon caused by local overheating.
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