Method and system for multi-path radio frequency load power adjustment based on resonant impedance regulation

Abstract

The present application relates to the technical field of radio frequency power adjustment in semiconductor manufacturing, and particularly relates to a multi-path radio frequency load power adjustment method and system based on resonant impedance adjustment. H1 and target low-frequency power P L1 ; determining the target capacitance value of the high-frequency adjustment branch adjustable capacitor C H ; determining the target capacitance value of the low-frequency adjustment branch adjustable capacitor C L ; adjusting the high-frequency adjustment branch adjustable capacitor C H and the low-frequency adjustment branch adjustable capacitor C L to the target capacitance value, so as to realize the adjustment of the load power. By independently adjusting the adjustable capacitors of the high-frequency and low-frequency branches, the present application solves the problem of uneven power distribution caused by inconsistent load impedance in the prior art, the resolution of the adjustable capacitor value is 0.1 picofarad, the adjustment accuracy is high, and the impedance changes of different process conditions and different chambers can be flexibly adapted, so that the consistency of wafer process processing is effectively improved.

Description

Technical Field

[0001] This invention relates to the field of radio frequency power regulation technology in semiconductor manufacturing, and specifically to a method and system for adjusting the power of multiple radio frequency loads based on resonant impedance regulation. Background Technology

[0002] In semiconductor equipment manufacturing, it is often necessary to use radio frequency (RF) power supplies of different frequencies, which are then mixed and output to multiple loads to meet the requirements of wafer fabrication. In existing technology, the RF power supply is matched by a matching unit and then directly distributed to each load through a power mixing and distribution unit. The loads are connected in parallel, and the power mixing and distribution unit distributes the current from the high-frequency and low-frequency power supplies evenly to each load.

[0003] Ideally, the impedances of all loads are exactly equal. In this case, each load receives the same power from both the high-frequency and low-frequency power supplies, ensuring consistent wafer fabrication results. However, in actual production, factors such as component processing precision, component mounting errors, and differences in gas distribution between the upper and lower electrodes under actual process conditions result in unequal impedances for each load.

[0004] Load impedance is typically expressed as Z = R + jX, where R is the real impedance, X is the imaginary impedance, and j is the imaginary unit. Different loads have different values ​​for R and X, resulting in varying high-frequency power received by each load from the high-frequency power supply. * and low-frequency power obtained from low-frequency power supply * They are all different, among which This represents the magnitude of the high-frequency current. The load impedance magnitude, The modulus of the low-frequency current ultimately leads to inconsistent processing results for each wafer, resulting in poor product consistency from the equipment.

[0005] In summary, existing technical solutions can only achieve power mixing and distribution, lack effective power regulation methods, and cannot solve the problem of uneven power distribution caused by inconsistent load impedance, thus limiting the improvement of semiconductor equipment processing accuracy and product quality. Summary of the Invention

[0006] The purpose of this invention is to propose a method and system for adjusting the power of multiple radio frequency loads based on resonant impedance regulation, which can achieve independent and precise adjustment of the high-frequency power and low-frequency power of each load to improve the consistency of wafer processing results.

[0007] According to a first aspect of the embodiments of this disclosure, a method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment is provided, comprising the following steps: Obtain the impedance magnitude of each load path. ; Determine the target high-frequency power P required for each load. H1 and target low-frequency power P L1 ; Based on the target high-frequency power P H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; Based on the target low-frequency power P L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Adjusting the adjustable capacitor C in the high-frequency adjustment branch H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

[0008] In one embodiment, the impedance modulus required for the high-frequency adjustment branch is... The method of obtaining the high-frequency current is as follows: Without a high-frequency adjustment branch, the high-frequency current flowing through the load is... The high-frequency power on the load is = |*|Z|;After adding the high-frequency adjustment branch, the total impedance modulus of the loop is _____. The voltage V1 in the circuit = * According to the target high-frequency power P H1 = Substituting into the expression of V1, we get: = .

[0009] In one embodiment, the imaginary part X of the impedance of the high-frequency adjustment branch H The method of acquisition is based on the impedance magnitude of the high-frequency adjustment branch. With the real part of the impedance R H Imaginary part of impedance X H Relationship = ,get: = , where R HMeasured using a network analyzer.

[0010] In one embodiment, the adjustable capacitor C of the high-frequency adjustment branch... H The target capacitance value is obtained by: the imaginary part of the impedance of the high-frequency adjustment branch. =(2π - ),in This is the operating frequency of the high-frequency power supply. To adjust the inductance value of the fixed-value inductor in the high-frequency adjustment branch, and The results were obtained through impedance measurement; therefore, the summary is as follows: The target capacitance value.

[0011] In one embodiment, the impedance modulus required for the low-frequency adjustment branch is... The method of obtaining the low-frequency current is as follows: Without a low-frequency regulation branch, the low-frequency current flowing through the load is... The low-frequency power on the load is = |*|Z|;After adding the low-frequency adjustment branch, the total impedance modulus of the loop is _____. The voltage V2 in the circuit = * According to the target low-frequency power P L1 = Substituting into the expression in V2, we get: = .

[0012] In one embodiment, the imaginary part X of the impedance of the low-frequency adjustment branch L The method of acquisition is based on the impedance magnitude of the low-frequency adjustment branch. With the real part of the impedance Imaginary part of impedance Relationship = ,get: = ,in Measured using a network analyzer.

[0013] In one embodiment, the adjustable capacitor C in the low-frequency adjustment branch... L The target capacitance value is obtained by: the imaginary part of the impedance of the low-frequency adjustment branch. =(2π - ),in This is the operating frequency of the low-frequency power supply. To adjust the inductance value of the fixed-value inductor in the low-frequency adjustment branch, and The value was obtained through impedance measurement; therefore, C is obtained by refining the result. L The target capacitance value.

[0014] A second aspect of the present disclosure provides a multi-channel RF load power adjustment system based on resonant impedance adjustment, comprising: The load impedance parameter acquisition module obtains the impedance magnitude of each load. ; The target power setting module determines the target high-frequency power P required for each load channel. H1 and target low-frequency power P L1 ; The high-frequency branch capacitor value calculation module is based on the target high-frequency power P. H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; The low-frequency branch capacitor value calculation module is based on the target low-frequency power P. L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Load power adjustment module, adjusting the adjustable capacitor C in the high-frequency adjustment branch. H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

[0015] According to a third aspect of the present disclosure, an electronic device is provided, including a memory, a processor, and a computer program stored in the memory and running on the memory, wherein the processor executes the program to implement the described multi-channel radio frequency load power adjustment method based on resonant impedance adjustment.

[0016] According to a fourth aspect of the present disclosure, a computer-readable storage medium is provided having a computer program stored thereon that, when executed by a processor, implements the described method for adjusting the power of multiple radio frequency loads based on resonant impedance adjustment.

[0017] The advantages of the above technical solutions adopted in this invention compared with the prior art are: 1. Enables free adjustment of high-frequency and low-frequency power for each load without interference; accurately matches preset power requirements to address impedance differences of different loads, completely solving the problem of uneven power distribution caused by different loads and ensuring consistent process conditions for each load.

[0018] 2. An adjustable capacitor with a numerical resolution of 0.1 picofarads is used as the core adjustment element. The minute adjustment of the capacitance value can be accurately converted into impedance change, thereby achieving high-precision power calibration and meeting the stringent power control requirements of semiconductor manufacturing.

[0019] 3. The adjustable capacitor has a wide range of adjustment characteristics, which can flexibly cope with the impedance fluctuations caused by changes in gas distribution under different process conditions, and can also adapt to the inherent impedance differences between different chambers. It can be adapted to a variety of application scenarios without replacing the core components.

[0020] 4. By compensating for power deviations caused by differences in load impedance, all loads can obtain uniform high-frequency and low-frequency power, effectively improving the consistency of wafer processing results and enhancing the product yield and stability of semiconductor equipment.

[0021] 5. By adding a power regulation module to the existing power mixing and distribution device, there is no need to reconstruct the original system architecture. The modification is simple, highly compatible, and can be quickly applied to the upgrade and optimization of existing semiconductor production equipment. Attached Figure Description

[0022] The accompanying drawings, which form part of this application, are used to provide a further understanding of this application. The illustrative embodiments of this application and their descriptions are used to explain this application and do not constitute an undue limitation of this application.

[0023] Figure 1 This is a schematic diagram of a multi-channel RF load power adjustment device based on resonant impedance regulation. Figure 2 This is a schematic diagram of a power mixing and splitter. Figure 3 This is a schematic diagram of the impedance curve variation; Figure 4 This is a schematic diagram of the load unit structure. Detailed Implementation

[0024] The present disclosure will be further described below with reference to the accompanying drawings and embodiments.

[0025] It should be noted that the following detailed descriptions are exemplary and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0026] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0027] It should be noted that the flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of methods and systems according to various embodiments of this disclosure. It should be noted that each block in a flowchart or block diagram may represent a module, segment, or portion of code, which may include one or more executable instructions for implementing the logical functions specified in the various embodiments. It should also be noted that in some alternative implementations, the functions marked in the blocks may occur in a different order than that shown in the drawings. For example, two consecutively represented blocks may actually be executed substantially in parallel, or they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the flowcharts and / or block diagrams, and combinations of blocks in the flowcharts and / or block diagrams, may be implemented using a dedicated hardware-based system that performs the specified functions or operations, or using a combination of dedicated hardware and computer instructions.

[0028] Example 1: This embodiment uses a semiconductor process equipment with four loads as an example. The high-frequency power supply operates at 13.56MHz, the low-frequency power supply operates at 400kHz, and the adjustable capacitor has a resolution of 0.1 picofarads. The aim is to more clearly demonstrate a multi-channel RF load power adjustment method based on resonant impedance adjustment, including the following steps: S1. Obtain the impedance magnitude of each load path. ; Specifically, a power impedance meter is used to measure the actual impedance parameters of the four loads, obtaining the impedances of each load: Z1=R1+jX1, Z2=R2+jX2, Z3=R3+jX3, Z4=R4+jX4 (R1, R2, R3, and R4 are all unequal, and X1, X2, X3, and X4 are all unequal). The impedance magnitude |Z| of each load is then calculated. ; S2. Determine the target high-frequency power P required for each load. H1 and target low-frequency power P L1 ; Specifically, based on the wafer fabrication process requirements, the target high-frequency power and target low-frequency power required for each load are set to ensure that the process conditions for each load are consistent.

[0029] S3. Based on target high-frequency power P H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; Specifically, the impedance modulus required for the high-frequency adjustment branch = Substituting the values ​​into the measurement, we obtain |Z|. and target high-frequency power P H1 To obtain the load corresponding to each path ; Imaginary part of impedance in high-frequency adjustable branch = R H And the above calculations Obtain the load corresponding to each path ; Imaginary part of impedance of a series resonant circuit =(2π - ),in =13.56MHz is the operating frequency of the high-frequency power supply. The imaginary part of the impedance is... The formula is rearranged to obtain Substitute the measured values And the above calculations Obtain the load corresponding to each path Target capacitance; The four high-frequency adjustable capacitors are adjusted to their respective target capacitance values, with the adjustment accuracy achieved based on the numerical resolution of 0.1 picofarads for the adjustable capacitors.

[0030] S4. Based on target low-frequency power P L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Specifically, the impedance modulus required for the low-frequency adjustment branch = Substitute the measured |Z| into and the set P L1 To obtain the load corresponding to each path ; Imaginary part of impedance in low-frequency adjustment branch = Substitute the measured values And the above calculations Obtain the load corresponding to each path ; Imaginary part of impedance of a series resonant circuit =(2π - ),in =400KHz is the operating frequency of the low-frequency power supply, and the imaginary part of the impedance is... The formula is rearranged to obtain Substitute the measured values And the above calculations Obtain the load corresponding to each path Target tolerance.

[0031] The four low-frequency adjustable capacitors are adjusted to their respective target capacitance values, with the adjustment accuracy achieved based on the numerical resolution of 0.1 picofarads for the adjustable capacitors.

[0032] S5. Adjust the adjustable capacitor C in the high-frequency adjustment branch. H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

[0033] After adjusting the adjustable capacitor, the actual high-frequency and low-frequency power of each load was measured. Since the high-frequency and low-frequency adjustment branches operate at least two orders of magnitude apart, they do not interfere with each other. Furthermore, by adjusting the adjustable capacitor value to compensate for the load impedance differences, the actual high-frequency power of each load can be stabilized at the target high-frequency power P. H1 The actual low-frequency power can be stabilized at the target low-frequency power P. H1 This allows for the adjustment of load power.

[0034] Preferably, the above method is implemented in a multi-channel RF load power adjustment device, such as... Figure 1-3 As shown, the device includes: RF power supply module: 13.56MHz high-frequency power supply and 400KHz low-frequency power supply, with the two operating frequency bands differing by at least two orders of magnitude; Matching units: high-frequency matching unit and low-frequency matching unit, used to achieve preliminary impedance matching between the power supply and the load; Power Distribution Unit: A power hybrid distributor that evenly distributes the current from the high-frequency power supply and the low-frequency power supply to the four loads. Power regulation unit: 4 independent power regulation modules, each including a high-frequency regulation branch and a low-frequency regulation branch. The high-frequency regulation branch uses a fixed-value inductor. and adjustable capacitor The series connection consists of a low-frequency regulating branch with a fixed inductance. and adjustable capacitor Composed of series connections, the adjustable capacitor has a numerical resolution of 0.1 picofarads; Load Unit: 4-channel load, each channel consisting of an in-process chamber gas spray head (upper electrode), a wafer heating plate (lower electrode), process gas, and a wafer, such as... Figure 4 As shown, the load impedance is expressed as Z = R + jX (R is the real part of the impedance, X is the imaginary part of the impedance, and j is the imaginary unit).

[0035] The high-frequency power supply is connected to the input of each power regulator sequentially via a high-frequency matching circuit and a power mixing and splitter; the low-frequency power supply is connected to the input of each power regulator sequentially via a low-frequency matching circuit and a power mixing and splitter; the output of each power regulator is connected to the corresponding load unit, and both the high-frequency and low-frequency adjustment branches are connected in parallel with the impedance of the load unit. The resonant frequency of the high-frequency adjustment branch is designed to be around 13.56MHz, and the resonant frequency of the low-frequency adjustment branch is designed to be around 400kHz.

[0036] Example 2: This embodiment provides a multi-channel RF load power adjustment system based on resonant impedance adjustment, including: The load impedance parameter acquisition module obtains the impedance magnitude of each load. ; The target power setting module determines the target high-frequency power P required for each load channel. H1 and target low-frequency power P L1 ; The high-frequency branch capacitor value calculation module is based on the target high-frequency power P. H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; The low-frequency branch capacitor value calculation module is based on the target low-frequency power P. L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Load power adjustment module, adjusting the adjustable capacitor C in the high-frequency adjustment branch. Hand the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

[0037] The above modules can be deployed on the same device or distributed devices; the division of modules is only a functional logic description and does not limit the specific physical boundaries or implementation order.

[0038] Example 3: An electronic device is provided for running the aforementioned "multi-channel RF load power adjustment method based on resonant impedance adjustment". The electronic device includes: a processor, a memory, and optional communication interfaces / display devices / input devices, etc.; the memory stores a computer program that can run on the processor. When the processor executes the program, it implements steps S1 to S5 of the method described in Embodiment 1, specifically including but not limited to: S1. Obtain the impedance magnitude of each load path. ; S2. Determine the target high-frequency power P required for each load. H1 and target low-frequency power P L1 ; S3. Based on target high-frequency power P H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; S4. Based on target low-frequency power P L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; S5. Adjust the adjustable capacitor C in the high-frequency adjustment branch. H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

[0039] The electronic device hardware can be one of a server, personal computer, workstation, industrial controller, edge computing device, or mobile terminal; the processor can be a general-purpose CPU, GPU, NPU, FPGA, or a combination thereof; the memory can be RAM, ROM, flash memory, or disk array. The device can interact with local / remote data storage (acquiring observation data and outputting inversion results) through a communication interface. The above hardware configuration does not constitute a limitation of the present invention.

[0040] Example 4: A computer-readable storage medium storing a computer program, which, when run on a processor of an electronic device, causes the program to execute the method steps S1 to S5 described in Embodiment 1; the storage medium may be a disk, optical disk, flash memory, solid-state drive, read-only memory, random access memory, or any combination of the above media.

[0041] Those skilled in the art will understand that the modules or steps described above can be implemented using general-purpose computer devices. Optionally, they can be implemented using computer-executable program code, which can then be stored in a storage device for execution by a computer device. Alternatively, they can be fabricated as separate integrated circuit modules, or multiple modules or steps can be fabricated as a single integrated circuit module. This disclosure is not limited to any particular combination of hardware and software.

[0042] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

[0043] While the specific embodiments of this disclosure have been described above in conjunction with the accompanying drawings, this is not intended to limit the scope of protection of this disclosure. Those skilled in the art should understand that various modifications or variations that can be made by those skilled in the art without creative effort based on the technical solutions of this disclosure are still within the scope of protection of this disclosure.

Claims

1. A method for adjusting the power of a multi-channel RF load based on resonant impedance regulation, characterized in that, Includes the following steps: Obtain the impedance magnitude of each load path. ; Determine the target high-frequency power P required for each load. H1 and target low-frequency power P L1 ; Based on the target high-frequency power P H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; Based on the target low-frequency power P L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Adjusting the adjustable capacitor C in the high-frequency adjustment branch H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

2. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 1, characterized in that, The impedance modulus required for the high-frequency adjustment branch The method of obtaining the high-frequency current is as follows: Without a high-frequency adjustment branch, the high-frequency current flowing through the load is... The high-frequency power on the load is = |*|Z|;After adding the high-frequency adjustment branch, the total impedance modulus of the loop is _____. The voltage V1 in the circuit = * ; Based on the target high-frequency power P H1 = Substituting into the expression of V1, we get: = .

3. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 1 or 2, characterized in that, The imaginary part of the impedance X of the high-frequency adjustable branch H The method of acquisition is based on the impedance magnitude of the high-frequency adjustment branch. With the real part of the impedance R H Imaginary part of impedance X H Relationship = ,get: = , where R H Measured using a network analyzer.

4. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 3, characterized in that, High-frequency adjustment branch adjustable capacitor C H The target capacitance value is obtained by: the imaginary part of the impedance of the high-frequency adjustment branch. =(2π - ),in This is the operating frequency of the high-frequency power supply. To adjust the inductance value of the fixed-value inductor in the high-frequency adjustment branch, and The results were obtained through impedance measurement; therefore, the summary is as follows: The target capacitance value.

5. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 1, characterized in that, The impedance modulus required for the low-frequency adjustment branch The method of obtaining the low-frequency current is as follows: Without a low-frequency regulation branch, the low-frequency current flowing through the load is... The low-frequency power on the load is = |*|Z|;After adding the low-frequency adjustment branch, the total impedance modulus of the loop is _____. The voltage V2 in the circuit = * According to the target low-frequency power P L1 = Substituting into the expression in V2, we get: = .

6. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 1 or 4, characterized in that, The imaginary part of the impedance X of the low-frequency adjustment branch L The method of acquisition is based on the impedance magnitude of the low-frequency adjustment branch. With the real part of the impedance Imaginary part of impedance Relationship = ,get: = ,in Measured using a network analyzer.

7. The method for adjusting the power of a multi-channel RF load based on resonant impedance adjustment according to claim 6, characterized in that, Low-frequency adjustment branch adjustable capacitor C L The target capacitance value is obtained by: the imaginary part of the impedance of the low-frequency adjustment branch. =(2π - ),in This is the operating frequency of the low-frequency power supply. To adjust the inductance value of the fixed-value inductor in the low-frequency adjustment branch, and The value was obtained through impedance measurement; therefore, C is obtained by refining the result. L The target capacitance value.

8. A multi-channel RF load power adjustment system based on resonant impedance regulation, characterized in that, include: The load impedance parameter acquisition module obtains the impedance magnitude of each load. ; The target power setting module determines the target high-frequency power P required for each load channel. H1 and target low-frequency power P L1 ; The high-frequency branch capacitor value calculation module is based on the target high-frequency power P. H1 To obtain the impedance modulus required for the high-frequency adjustment branch and according to The real part R of the impedance of the high-frequency adjustment branch H Obtain the imaginary part X of the impedance of the high-frequency adjustment branch. H Therefore, the adjustable capacitor C of the high-frequency adjustment branch is determined. H Target capacitance value; The low-frequency branch capacitor value calculation module is based on the target low-frequency power P. L1 To obtain the impedance modulus required for the low-frequency adjustment branch and according to The real part R of the impedance of the low-frequency adjustment branch L Obtain the imaginary part X of the impedance of the low-frequency adjustment branch. L Therefore, the adjustable capacitor C of the low-frequency adjustment branch is determined. L Target capacitance value; Load power adjustment module, adjusting the adjustable capacitor C in the high-frequency adjustment branch. H and the adjustable capacitor C in the low-frequency adjustment branch L The target capacitance value is reached to adjust the load power.

9. An electronic device, comprising a memory, a processor, and a computer program stored in the memory and running thereon, characterized in that, When the processor executes the program, it implements the multi-channel RF load power adjustment method based on resonant impedance adjustment as described in any one of claims 1-7.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that, When executed by a processor, the program implements the multi-channel RF load power adjustment method based on resonant impedance adjustment as described in any one of claims 1-7.

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