Illumination device comprising infrared light and method of processing

By employing a multi-layer optical structure consisting of a fluorescent layer, a scattering layer, and an absorption layer in the near-infrared light source, the problem of ultraviolet light leakage is solved, achieving efficient and safe near-infrared light output, extending equipment lifespan, and reducing maintenance costs.

CN122227759APending Publication Date: 2026-06-16GUANGDONG POLYTECHNIC NORMAL UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
GUANGDONG POLYTECHNIC NORMAL UNIV
Filing Date
2026-03-10
Publication Date
2026-06-16

AI Technical Summary

Technical Problem

Existing near-infrared light sources suffer from ultraviolet light leakage, leading to energy loss and potential biological hazards, making it difficult to meet the application requirements of broadband near-infrared spectroscopy.

Method used

It adopts a multi-layer optical structure, including a fluorescent layer, a scattering layer and an absorption layer. The fluorescent layer converts ultraviolet light into near-infrared light, the scattering layer enhances light extraction efficiency, and the absorption layer captures residual ultraviolet light. The design of decreasing refractive index reduces optical interference and energy loss, and the removable absorption layer facilitates maintenance.

Benefits of technology

It achieves efficient and safe near-infrared light output, reduces ultraviolet light leakage, improves optical efficiency and equipment lifespan, and reduces maintenance costs.

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Abstract

The application discloses an illumination device containing infrared light and a processing method, relates to the technical field of infrared illumination devices, and sequentially covers a fluorescent layer, a scattering layer and an absorbing layer on the surface of a light source module to form a multilayer optical structure. Ultraviolet light is excited by the fluorescent layer to generate near-infrared light, the scattering layer enhances light extraction efficiency, and the absorbing layer captures residual ultraviolet light to realize near-infrared illumination. The refractive indexes of the fluorescent layer, the scattering layer and the absorbing layer decrease in turn, effectively reducing total reflection loss of light at the interface between layers, thereby improving the light extraction efficiency of near-infrared light and avoiding energy loss. The absorbing layer is detachably installed, so that the absorbing layer can be individually replaced after performance degradation, thereby reducing maintenance cost. The processing method comprises the steps of chip packaging, fluorescent layer coating, scattering layer preparation, absorbing layer preparation and assembly, and realizes accurate construction of the multilayer optical structure.
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Description

Technical Field

[0001] This invention relates to the field of infrared lighting equipment technology, and in particular to a lighting device that incorporates infrared light and a processing method thereof. Background Technology

[0002] Near-infrared LED light sources are increasingly widely used in agricultural supplemental lighting, medical rehabilitation, and health lighting. Currently, commercial near-infrared light sources mainly use halogen lamps or infrared light-emitting diodes (LEDs). However, halogen lamps have inherent drawbacks such as short lifespan, high energy consumption, large size, and slow response speed; while infrared LEDs are small and have a fast response, their emission band is narrow, and their luminous intensity decays severely at high temperatures, making it difficult to meet the application requirements of broadband near-infrared spectra. In recent years, fluorescence conversion near-infrared light sources based on "ultraviolet LED chips + near-infrared fluorescent materials" have attracted widespread attention. This approach has advantages such as tunable spectrum, low cost, and ease of integration. However, the absorption spectrum of near-infrared phosphors is mostly located in the ultraviolet region, requiring ultraviolet LED chips for excitation. This inevitably leads to some ultraviolet light not being completely converted and escaping. This overflowing ultraviolet light not only causes energy loss but may also pose potential harm to organisms (such as human eyes, skin, and plant tissues), limiting its application in health lighting and agricultural supplemental lighting scenarios. Summary of the Invention

[0003] This invention aims to at least solve one of the technical problems existing in the prior art. To this end, this invention proposes an illumination device and processing method that incorporates infrared light, avoiding ultraviolet light leakage and reducing energy loss.

[0004] According to a first aspect of the present invention, an illumination device comprising infrared light includes: The light source module has a surface covered with a fluorescent layer, a scattering layer, and an absorption layer. The scattering layer covers the fluorescent layer, and the absorption layer is detachably mounted on the scattering layer. The absorption layer has multiple dispersed carbon quantum dots. The ultraviolet light emitted by the light source module can pass through the fluorescent layer and excite near-infrared light, and some of the overflowing ultraviolet light can be absorbed by the absorption layer.

[0005] According to an embodiment of the first aspect of the present invention, an infrared light-incorporating lighting device has at least the following beneficial effects: This embodiment forms a multi-layer optical structure by sequentially covering the surface of the light source module with a fluorescent layer, a scattering layer, and an absorption layer. Ultraviolet light is excited by the fluorescent layer to generate near-infrared light, the scattering layer enhances light extraction efficiency, and the absorption layer captures residual ultraviolet light, achieving efficient and safe near-infrared illumination. The refractive indices of the fluorescent, scattering, and absorption layers decrease sequentially, effectively reducing total internal reflection losses at the interlayer interfaces, thus significantly improving the near-infrared light extraction efficiency while avoiding optical interference and energy loss caused by abrupt changes in refractive index. The absorption layer is detachable, facilitating individual replacement after performance degradation without replacing the entire lamp, thereby extending the overall lifespan of the luminaire and reducing maintenance costs.

[0006] According to an embodiment of the first aspect of the present invention, the lampshade is further provided with a connecting seat, the light source module is mounted on the base, and the connecting seat can be connected to the base by magnetic attraction.

[0007] According to an embodiment of the first aspect of the present invention, an air layer is provided between the scattering layer and the absorbing layer, and the refractive index of the air layer is lower than that of the absorbing layer.

[0008] According to an embodiment of the first aspect of the present invention, an air layer is provided between the scattering layer and the absorption layer, and an air inlet and an air outlet are provided in the base. The air inlet and the air outlet are respectively provided with an air inlet and an air outlet communicating with the air layer. The air inlet is used to send airflow into the air layer, and the air outlet is used to discharge hot airflow in the air layer.

[0009] According to an embodiment of the first aspect of the present invention, the air intake extends from the base toward the inner peripheral wall of the absorption layer, and the air intake is inclined to the bottom wall of the base.

[0010] According to an embodiment of the first aspect of the present invention, the base is provided with at least two bosses, with the air inlet and the exhaust outlet located on different bosses.

[0011] According to an embodiment of the first aspect of the present invention, the lampshade is detachably connected to the base, the absorption layer is coated on the surface of the lampshade by a spraying process, the lampshade is provided with a connecting seat, the light source module is mounted on the base, and the connecting seat can be connected to the base by magnetic attraction.

[0012] According to an embodiment of the first aspect of the present invention, the absorber layer is made of a mixture of carbon quantum dots and polyurethane-type UV-curable resin, and the fluorescent layer is made of Cr³⁺. + It is made by mixing doped near-infrared phosphor with high-transmittance silicone encapsulation resin.

[0013] According to an embodiment of the first aspect of the present invention, the scattering layer is made by mixing TiO2 scattering particles and transparent organosilicon resin at a mass ratio of 1:25.

[0014] According to an embodiment of a second aspect of the present invention, a processing method is provided, comprising the following steps: Chip packaging: UV-LED chips with emission peak wavelengths in the range of 340-405nm are fixed onto a substrate and connected to electrodes through a die bonding process to form a light source module; Fluorescent layer coating: Cr³ + Doped near-infrared phosphor and high-transmittance encapsulating resin are mixed at a preset mass ratio, and after vacuum stirring and degassing, the mixture is coated onto the surface of the light source module using a dispensing process. The shape of the colloid is controlled to be hemispherical, and it is thermally cured at 140°C to 160°C for 40 to 80 minutes to form a fluorescent layer with a thickness of 0.4 mm to 0.6 mm. Preparation of scattering layer: TiO2 scattering particles and transparent organosilicon resin are mixed at a preset mass ratio and uniformly covered on the surface of the fluorescent layer by spraying. The mixture is pre-cured at 70°C to 90°C for 10 to 20 minutes to form a scattering layer with a thickness of 0.05 mm to 0.15 mm. Preparation of the absorption layer: Carbon quantum dots with a particle size of 3nm to 8nm are mixed with UV-curable resin at a preset mass ratio and ultrasonically dispersed for 20 to 40 minutes to form a uniform slurry. The slurry is then coated onto the surface of a transparent polycarbonate lampshade using spin coating or spray coating. It is then cured for 60 to 120 seconds under 340nm to 390nm ultraviolet light to form an absorption layer with a thickness of 0.2mm to 0.4mm. Assembly: Install the light source module with the fluorescent layer and the scattering layer into the base, connect the driving power supply, and then fix the lamp cover to the base, so that an air layer is maintained between the absorption layer and the scattering layer.

[0015] The processing method according to the second aspect of the present invention has at least the following beneficial effects: This embodiment achieves precise construction of a multilayer optical structure through a sequential process of "chip packaging, phosphor layer coating, scattering layer preparation, absorption layer preparation, and assembly." The process parameters (temperature, time, thickness) for each step are coordinated and matched to ensure stable interlayer bonding and optical matching between the phosphor layer, scattering layer, and absorption layer. The use of a dispensing process to control the colloid to a hemispherical shape maximizes the contact area between the phosphor layer and the chip, reduces sidewall light loss, and improves the conversion efficiency from ultraviolet to near-infrared light. The absorption layer is independently prepared on the surface of a detachable transparent polycarbonate lampshade, enabling separate processing of the functional module and the light source module. This facilitates mass production and subsequent maintenance and replacement, reducing overall manufacturing costs.

[0016] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. Attached Figure Description

[0017] The present invention will be further described below with reference to the accompanying drawings and embodiments, wherein: Figure 1 This is an isometric view of a lighting device containing infrared light according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the fluorescent layer, scattering layer, air layer, and absorption layer in an embodiment of the present invention; Figure 3 This is an exploded view of a lighting device including infrared light according to an embodiment of the present invention; Figure 4 This is a first cross-sectional view of a lighting device containing infrared light according to an embodiment of the present invention; Figure 5 This is a second cross-sectional view of a lighting device containing infrared light according to an embodiment of the present invention; Figure 6 This is a third cross-sectional view of a lighting device containing infrared light according to an embodiment of the present invention; Figure 7 This is a flowchart of the processing method in an embodiment of the present invention.

[0018] Figure label: Base 100; Lampshade 101; Connector 102; Air intake duct 103; Exhaust duct 104; Air inlet 105; Exhaust outlet 106; Boss 107; Limiting plate 108; Limiting groove 109; Light source module 110; fluorescent layer 111; scattering layer 112; absorption layer 113; air layer 114. Detailed Implementation

[0019] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0020] In the description of this invention, it should be understood that the orientation descriptions, such as up, down, front, back, left, right, etc., are based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limiting this invention.

[0021] In the description of this invention, "several" means one or more, "more than" means two or more, "greater than," "less than," and "exceeding" are understood to exclude the stated number, while "above," "below," and "within" are understood to include the stated number. The use of "first" and "second" in the description is merely for distinguishing technical features and should not be construed as indicating or implying relative importance, or implicitly indicating the number of indicated technical features, or implicitly indicating the order of the indicated technical features.

[0022] In the description of this invention, unless otherwise explicitly defined, terms such as "set up," "install," and "connect" should be interpreted broadly, and those skilled in the art can reasonably determine the specific meaning of the above terms in this invention in conjunction with the specific content of the technical solution.

[0023] Reference Figures 1 to 6 An infrared light illumination device according to a first aspect embodiment of the present invention includes a light source module 110, the surface of which is covered with a fluorescent layer 111, a scattering layer 112, and an absorption layer 113. The scattering layer 112 covers the fluorescent layer 111, and the absorption layer 113 is detachably mounted on the scattering layer 112. The absorption layer 113 has a plurality of dispersed carbon quantum dots. Ultraviolet light emitted by the light source module 110 can pass through the fluorescent layer 111 and excite near-infrared light, and some of the overflowing ultraviolet light can be absorbed by the absorption layer 113. The refractive indices of the fluorescent layer 111, the scattering layer 112, and the absorption layer 113 gradually decrease.

[0024] Specifically, the fluorescent layer 111 performs the main wavelength conversion function, converting most of the ultraviolet light into the required near-infrared light; the scattering layer 112 covers the fluorescent layer 111 and can scatter the converted near-infrared light, making its emission more uniform and reducing the total internal reflection loss during light propagation within the layer; the absorption layer 113 is located on the outermost layer and uses carbon quantum dots as the ultraviolet absorption material, which can efficiently capture the residual ultraviolet light that has passed through the first two layers without being converted. Through the synergistic effect of the three-layer structure, both the efficient output of near-infrared light is ensured and the safety hazards of ultraviolet light leakage are effectively eliminated.

[0025] Furthermore, the refractive indices of the fluorescent layer 111, scattering layer 112, and absorption layer 113 decrease sequentially. When light propagates from a high-refractive-index medium to a low-refractive-index medium, if the abrupt change in refractive index is too large, total internal reflection can easily occur at the interface, causing the light to be confined inside and unable to escape effectively. By designing the refractive indices of the three-layer structure to gradually decrease, a gradient refractive index matching structure is formed, which can effectively reduce the reflection loss of light at the interlayer interface, allowing more near-infrared light to be smoothly transmitted into the external space, thereby improving the overall light extraction efficiency.

[0026] Understandably, an air layer 114 is provided between the scattering layer 112 and the absorption layer 113, and the refractive index of the air layer 114 is lower than that of the absorption layer 113. Since the refractive index of air is approximately 1, much lower than that of common solid materials, a decreasing refractive index interface is also formed between the absorption layer 113 and the air layer 114. More importantly, the presence of the air layer 114 maintains a certain physical distance between the absorption layer 113 and the scattering layer 112, avoiding optical interference or mechanical wear that may occur from direct contact between the two layers. At the same time, the air layer 114 acts as a natural heat insulation layer, which can block the heat generated by the light source module 110 during operation from being transferred to the absorption layer 113, slowing down the thermal aging rate of the carbon quantum dots and polymer resin materials, thereby extending the service life of the absorption layer 113.

[0027] In this embodiment, a lampshade 101 and a base 100 are also included. The lampshade 101 is provided with a connecting seat 102, and the light source module 110 is installed inside the base 100. The connecting seat 102 can be connected to the base 100 by magnetic attraction. The absorption layer 113 is coated on the surface of the lampshade 101 by a spraying process, including the inner and outer sides of the lampshade 101. When the absorption performance of the absorption layer 113 decreases due to long-term ultraviolet radiation, the user only needs to remove the entire lampshade 101 from the base 100 and replace it with a new lampshade 101 to restore the ultraviolet protection capability of the device. There is no need to replace the entire lamp, which greatly reduces maintenance costs and usage burden.

[0028] The magnetic connection between the connector 102 and the base 100 can be implemented in various ways. In some embodiments, the outer periphery of the connector 102 is provided with a limiting piece 108 extending radially outward, and the base 100 is provided with a limiting groove 109 for embedding the limiting piece 108. A magnet is embedded in the limiting piece 108, and the connection between the connector 102 and the base 100 is fixed by the attraction between the magnet and the metal material of the base 100. The mating structure of the limiting piece 108 and the limiting groove 109 not only provides connection stability but also plays a role in positioning and preventing rotation, ensuring that the lampshade 101 maintains the correct relative position with the light source module 110 after installation, and avoiding the degradation of optical performance due to misalignment.

[0029] To further improve heat dissipation, an active cooling structure can be installed within the base 100. (Refer to...) Figure 5 and Figure 6The base 100 is equipped with an air inlet 103 and an exhaust 104, with an air inlet 105 and an exhaust outlet 106 respectively connected to the air layer 114. The air inlet 103 is used to supply airflow into the air layer 114, and the exhaust 104 is used to exhaust the hot airflow within the air layer 114. When the light source module 110 is working, some of the heat generated is transferred to the air layer 114 via convection. External cold air is introduced through the air inlet 103, flows within the air layer 114, absorbs heat, and then the hot air carrying the heat is exhausted from the exhaust 104, forming a continuous airflow circulation. This effectively reduces the operating temperature of the absorption layer 113 and the scattering layer 112, further improving the thermal stability and service life of the equipment. It is understandable that the intake duct 103 and the exhaust duct 104 are connected to a circulation device. The circulation device injects low-temperature air into the intake duct 103 through an air pump or a fan, and at the same time uses an exhaust fan to exhaust air from the exhaust duct 104; or it uses natural exhaust after the air pressure in the air layer 114 rises to achieve ventilation.

[0030] To ensure an effective flow path for airflow within the air layer 114, the extension direction of the air intake duct 103 needs to be rationally designed. The air intake duct 103 extends from the base 100 towards the inner peripheral wall of the absorption layer 113, and is inclined to the bottom wall of the base 100. This inclined design guides the airflow into the air layer 114 at a certain angle, allowing it to flow along the inner surface of the absorption layer 113, rather than directly impacting it and causing localized turbulence. This results in a more uniform airflow distribution throughout the air layer 114, improving heat exchange efficiency. In a further embodiment, the air intake duct 103 and exhaust duct 104 are arc-shaped pipes, and the air inlet 105 and exhaust outlet are respectively located on both radially opposite sides of the light source module 110. Furthermore, since the lampshade 101 is hemispherical, the airflow can circulate circumferentially within the air layer 114, effectively carrying away heat and improving heat exchange efficiency.

[0031] To ensure that the positions of the air inlet 105 and the exhaust outlet 106 do not interfere with each other and to prevent airflow short-circuiting, a boss structure can be provided inside the base 100. (Refer to...) Figure 4 The base 100 has at least two protrusions 107, with the air inlet 105 and the exhaust outlet 106 located on different protrusions 107. The design of the protrusions 107 makes the air inlet 105 and the exhaust outlet 106 spatially offset from each other. The cold air introduced by the air inlet 105 needs to travel a longer path to reach the exhaust outlet 106, ensuring that the airflow can fully pass through the entire air layer 114 area and improve the heat exchange effect.

[0032] The absorber layer 113 is made of a mixture of carbon quantum dots and polyurethane-based UV-curable resin. Carbon quantum dots, as a novel carbon nanomaterial, possess excellent photothermal stability and long-lasting UV absorption capacity. Compared to traditional organic UV absorbers, they are less prone to photobleaching and can maintain stable absorption performance under long-term UV irradiation. The polyurethane-based UV-curable resin has good transparency and mechanical strength, and good compatibility with carbon quantum dots, enabling the formation of a uniform and stable coating. The fluorescent layer 111 uses Cr³⁺... + It is made by mixing doped near-infrared phosphor with high-transmittance silicone encapsulating resin. Cr³ + The doped near-infrared phosphor can be effectively excited by ultraviolet light in the 340-405nm band, emitting broadband near-infrared light in the 700-1100nm band with a wide half-width, making it suitable for various applications such as agricultural supplemental lighting and bioimaging. The high-transmittance silicone encapsulating resin has excellent light transmittance and heat resistance, ensuring efficient fluorescence conversion. The scattering layer 112 is made by mixing TiO2 scattering particles and transparent silicone resin at a mass ratio of 1:25. The TiO2 particles have a high refractive index, effectively scattering near-infrared light and improving light emission uniformity; the transparent silicone resin, as the matrix material, has good flexibility and weather resistance, forming a good bond with the upper and lower layers.

[0033] Reference Figure 7 A second aspect of the present invention provides a processing method for the above-mentioned lighting equipment, comprising the following steps.

[0034] Chip packaging steps: A UV-LED chip with an emission peak wavelength range of 340-405nm is fixed onto a substrate and connected to electrodes using a die-bonding process to form a light source module 110. The die-bonding process can employ methods such as silver paste die-bonding or eutectic die-bonding; this embodiment preferably uses silver paste die-bonding, where the chip is bonded to an aluminum substrate with silver paste and cured at 150°C for 60 minutes to ensure a strong connection and good thermal conductivity between the chip and the substrate. Electrode connections are made using ultrasonic wire bonding with gold wire to connect the chip electrodes to the substrate circuitry.

[0035] Fluorescent layer 111 coating step: Apply Cr³ +Doped near-infrared phosphor and high-transmittance encapsulating resin are mixed at a preset mass ratio. After vacuum stirring and degassing, the mixture is applied to the surface of the light source module 110 using a dispensing process, controlling the shape of the colloid to be hemispherical. The mixture is then thermo-cured at 140°C to 160°C for 40 to 80 minutes to form a phosphor layer 111 with a thickness of 0.4 mm to 0.6 mm. The mass ratio of phosphor to resin can be fine-tuned according to the desired near-infrared output wavelength; in this embodiment, the preferred range is 1:4 to 1:6. The purpose of controlling the colloid to be hemispherical in the dispensing process is that the hemispherical structure allows for good optical coupling between the phosphor layer 111 and the chip surface, reducing light loss from the chip sidewalls. Simultaneously, the curved surface of the hemispherical structure helps reduce total internal reflection when light exits from the chip into the external space, improving light extraction efficiency. The selection of thermo-curing temperature and time needs to balance the complete curing of the resin and the thermal stability of the phosphor, avoiding excessively high temperatures or excessively long curing times that could lead to phosphor performance degradation.

[0036] Preparation steps of scattering layer 112: TiO2 scattering particles and transparent organosilicon resin are mixed at a preset mass ratio and uniformly coated onto the surface of fluorescent layer 111 using a spraying process. Pre-curing is then carried out at 70℃ to 90℃ for 10 to 20 minutes to form a scattering layer 112 with a thickness of 0.05 mm to 0.15 mm. The particle size selection of TiO2 particles needs to consider the balance between scattering efficiency and coating transparency. In this embodiment, nano-sized TiO2 particles with a particle size range of 50-200 nm are preferably used. The spraying process can achieve uniform thin-layer coating. The selection of pre-curing conditions must ensure the initial formation of the coating while also allowing for subsequent integration with air layer 114.

[0037] Preparation steps of absorption layer 113: Carbon quantum dots with a particle size of 3nm to 8nm are mixed with UV-curable resin at a preset mass ratio, and ultrasonically dispersed for 20 to 40 minutes to form a uniform slurry. This slurry is then coated onto the surface of a transparent polycarbonate lampshade 101 using spin coating or spray coating. It is then cured under 340nm to 390nm UV light for 60 to 120 seconds to form an absorption layer 113 with a thickness of 0.2mm to 0.4mm. Controlling the particle size of the carbon quantum dots to the nanometer level ensures their uniform dispersion in the resin and avoids agglomeration that would reduce the transparency of the coating. UV curing offers advantages such as fast curing speed, low energy consumption, suitability for heat-sensitive substrates, and good compatibility with the processing technology of the polycarbonate lampshade 101. The selection of the curing wavelength needs to match the absorption characteristics of the carbon quantum dots while avoiding adverse effects on their luminescence performance.

[0038] Assembly Steps: The light source module 110, comprising a fluorescent layer 111 and a scattering layer 112, is installed inside the base 100. A driving power supply is connected, and then the lampshade 101 is fixed to the base 100, maintaining an air layer 114 between the absorption layer 113 and the scattering layer 112. The lampshade 101 and the base 100 can be fixed using the aforementioned magnetic connection structure, achieving quick installation and removal through the magnetic attraction between the connector 102 and the base 100. During the fixing process, it is necessary to ensure that a stable air layer 114 is formed between the absorption layer 113 and the scattering layer 112 after the lampshade 101 is installed in place, preventing contact that could lead to decreased optical performance or mechanical damage. The thickness of the air layer 114 can be controlled by the mating structure between the connector 102 and the base 100; in this embodiment, the preferred thickness range is 0.5 mm to 2.0 mm.

[0039] The lighting equipment prepared by the above processing method achieves precise control over the thickness, refractive index, and material properties of each functional layer, enabling it to meet performance targets of ≤5% ultraviolet light and ≥95% near-infrared light. Furthermore, the near-infrared emission peak within the 700-1100nm range can be adjusted based on the phosphor selection. The introduction of the air layer 114 not only optimizes optical performance but also enhances heat dissipation. Combined with the detachable lampshade 101 design, this provides the equipment with long-term stable performance and ease of maintenance.

[0040] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the above embodiments. Within the scope of knowledge possessed by those skilled in the art, various changes can be made without departing from the spirit of the present invention.

Claims

1. A lighting device incorporating infrared light, characterized in that, include: A light source module has a surface covered with a fluorescent layer, a scattering layer, and an absorption layer. The scattering layer covers the fluorescent layer, and the absorption layer is detachably mounted on the scattering layer. The absorption layer has multiple dispersed carbon quantum dots. The ultraviolet light emitted by the light source module can pass through the fluorescent layer and excite near-infrared light, and some of the overflowing ultraviolet light can be absorbed by the absorption layer. The refractive index of the fluorescent layer, the scattering layer, and the absorption layer gradually decreases.

2. The lighting device including infrared light according to claim 1, characterized in that, It also includes a lampshade, which has a connecting base. The light source module is mounted on the base, and the connecting base can be connected to the base by magnetic attraction.

3. A lighting device incorporating infrared light according to claim 1, characterized in that, An air layer exists between the scattering layer and the absorbing layer, and the refractive index of the air layer is lower than that of the absorbing layer.

4. A lighting device incorporating infrared light according to claim 1, characterized in that, An air layer exists between the scattering layer and the absorption layer. An air inlet and an exhaust outlet are provided in the base. The air inlet and the exhaust outlet have an air inlet and an exhaust outlet respectively connected to the air layer. The air inlet is used to send airflow into the air layer, and the exhaust outlet is used to discharge hot airflow from the air layer.

5. A lighting device incorporating infrared light according to claim 4, characterized in that, The air intake extends from the base toward the inner peripheral wall of the absorption layer, and the air intake is inclined to the bottom wall of the base.

6. A lighting device incorporating infrared light according to claim 4, characterized in that, The base has at least two protrusions, and the air inlet and the exhaust outlet are located on different protrusions.

7. A lighting device incorporating infrared light according to claim 1, characterized in that, It also includes a lampshade, which is detachably connected to the base. The absorption layer is coated on the surface of the lampshade by a spraying process. The lampshade is provided with a connecting seat. The light source module is installed on the base. The connecting seat can be connected to the base by magnetic attraction.

8. A lighting device incorporating infrared light according to claim 1, characterized in that, The absorber layer is made by mixing carbon quantum dots with polyurethane UV-curable resin, and the fluorescent layer is made of Cr³⁺. + It is made by mixing doped near-infrared phosphor with high-transmittance silicone encapsulation resin.

9. A lighting device incorporating infrared light according to claim 1, characterized in that, The scattering layer is made by mixing TiO2 scattering particles and transparent organosilicon resin at a mass ratio of 1:

25.

10. A processing method, applied to a lighting device containing infrared light as described in any one of claims 1 to 9, characterized in that, Includes the following steps: Chip packaging: UV-LED chips with emission peak wavelengths in the range of 340-405nm are fixed onto a substrate and connected to electrodes through a die bonding process to form a light source module; Fluorescent layer coating: Cr³ + Doped near-infrared phosphor and high-transmittance encapsulating resin are mixed at a preset mass ratio, and after vacuum stirring and degassing, the mixture is coated onto the surface of the light source module using a dispensing process. The shape of the colloid is controlled to be hemispherical, and it is thermally cured at 140°C to 160°C for 40 to 80 minutes to form a fluorescent layer with a thickness of 0.4 mm to 0.6 mm. Preparation of scattering layer: TiO2 scattering particles and transparent organosilicon resin are mixed at a preset mass ratio and uniformly covered on the surface of the fluorescent layer by spraying. The mixture is pre-cured at 70°C to 90°C for 10 to 20 minutes to form a scattering layer with a thickness of 0.05 mm to 0.15 mm. Preparation of the absorption layer: Carbon quantum dots with a particle size of 3nm to 8nm are mixed with UV-curable resin at a preset mass ratio and ultrasonically dispersed for 20 to 40 minutes to form a uniform slurry. The slurry is then coated onto the surface of a transparent polycarbonate lampshade using spin coating or spray coating. It is then cured for 60 to 120 seconds under 340nm to 390nm ultraviolet light to form an absorption layer with a thickness of 0.2mm to 0.4mm. Assembly: Install the light source module with the fluorescent layer and the scattering layer into the base, connect the driving power supply, and then fix the lamp cover to the base, so that an air layer is maintained between the absorption layer and the scattering layer.