Temperature control device, plasma etching device, and semiconductor manufacturing system

Abstract

A temperature control device (1) has: a valve device (2); a first fluid supply device (40) that supplies a first fluid to the valve device (2); a second fluid supply device (50) that supplies a second fluid to the valve device (2); and a supply pipe portion (61) that makes the first fluid, the second fluid, or the first fluid and the second fluid that flow out from the valve device (2) pass therethrough, and the fluid that passes through the supply pipe portion (61) is subjected to temperature control. The valve device (2) has a first valve member (10) and a second valve member (20) that contact each other and are relatively rotatable while maintaining the state of contact. According to the relative rotation of the first valve member (10) and the second valve member (20), the first fluid, the second fluid, or the first fluid and the second fluid is supplied from the valve device (2) to the supply pipe portion (61).

Description

Technical Field

[0001] Embodiments of the present invention relate to temperature control devices, plasma etching devices, and semiconductor manufacturing systems. Background Technology

[0002] For example, high aspect ratio etching is required when manufacturing three-dimensional NAND flash memory.

[0003] For high aspect ratio etching, plasma etching apparatuses are typically used. These apparatuses utilize electrostatic chucks positioned within a chamber to hold the wafer, allowing free radicals from the plasma generated within the chamber to adhere to the wafer, and then introducing ions into the wafer through the application of voltage. Consequently, the free radicals and ions undergo a chemical reaction on the wafer. The result is that the surface of the wafer is etched.

[0004] In the plasma etching described above, ions are anisotropically introduced into the wafer due to the application of voltage. Therefore, high aspect ratio etching with suppressed side etching is possible.

[0005] However, in plasma etching apparatuses, the completion of high aspect ratio etching becomes unsatisfactory if proper temperature control is not performed according to the etching progress. For example, if free radicals adhere to the inner peripheral surface of the hole being etched, side etching can proceed, but temperature control can suppress the adhesion of free radicals to the inner peripheral surface. Therefore, temperature control of the wafer is typically performed in plasma etching apparatuses. Such temperature control is achieved, for example, by passing a heat transfer medium through an electrostatic chuck. Alternatively, there are cases where gas is supplied between the electrostatic chuck and the wafer to adjust the thermal conductivity of the heat transferred from the electrostatic chuck to the wafer.

[0006] Existing literature on such plasma etching apparatuses includes JP2023-043845A, JP2023-065471A, JP2023-002461A and JP2023-137580A.

[0007] As for the temperature control modes required for plasma etching apparatuses, examples include early switching from low temperature to high temperature or vice versa. In this regard, plasma etching apparatuses often use low-temperature and high-temperature refrigerants, switching temperature bands by switching valves located in the flow paths of each refrigerant. Alternatively, a slow switching from low temperature to high temperature is sometimes required. Similarly, in this regard, plasma etching apparatuses often use low-temperature and high-temperature refrigerants, slowly changing the mixing ratio of the low-temperature and high-temperature refrigerants by controlling the opening degree of valves in the flow paths of each refrigerant.

[0008] However, in order to switch the valves located in the flow paths of each refrigerant, the temperature control described above is performed through multiple control inputs. Furthermore, the mechanical characteristics of each valve sometimes differ. Therefore, the desired temperature control may not always be achieved with good responsiveness and accuracy.

[0009] Furthermore, when using multiple valves, the footprint of each valve and the piping connected to each valve can sometimes increase. Additionally, in plasma etching apparatuses, multiple components are arranged around the chuck, including electrodes and cables that generate a bias voltage for introducing ions into the wafer, electrodes and cables that apply a bias voltage to the electrostatic chuck, and piping for gas introduction. In recent years, in the field of semiconductor manufacturing equipment, there has been a strong demand to improve manufacturing efficiency by minimizing the footprint. Considering this, it is preferable to minimize the size and footprint of the constituent components. Summary of the Invention

[0010] The present invention was made with the consideration of such a point in mind, and its purpose is to provide a temperature control device, a plasma etching device, and a semiconductor manufacturing system that can suppress size and occupancy and improve the responsiveness and accuracy of temperature control.

[0011] The embodiments of the present invention are associated with the following manner.

[0012] Method 1. A temperature control device comprising: a valve device; a first fluid supply device for supplying a first fluid to the valve device; a second fluid supply device for supplying a second fluid to the valve device; and a supply pipe for allowing the first fluid, the second fluid, or the first fluid and the second fluid flowing from the valve device to circulate, the temperature control device performing temperature control using the fluid flowing through the supply pipe, wherein the valve device has a first valve component and a second valve component in contact with each other, the first valve component and the second valve component being rotatable relative to each other while maintaining contact, and the first fluid, the second fluid, or the first fluid and the second fluid being supplied from the valve device to the supply pipe according to the relative rotation of the first valve component and the second valve component.

[0013] Method 2. The temperature control device according to Method 1, wherein the first valve member has a first upstream flow path, a first downstream flow path, a second upstream flow path, and a second downstream flow path respectively opened on a face opposite to the second valve member and on a face different from the face opposite to the second valve member; the first upstream flow path is supplied with the first fluid, the second upstream flow path is supplied with the second fluid, the supply pipe receives the first fluid from the first downstream flow path, and receives the second fluid from the second downstream flow path; the second valve member has a first relay flow path that, depending on the relative rotation between the second valve member and the first valve member, overlaps with the first upstream flow path and the first downstream flow path. The first fluid is allowed to flow from the first upstream flow path to the first downstream flow path, and the flow of the first fluid from the first upstream flow path to the first downstream flow path is blocked by not overlapping with at least one of the first upstream flow path and the first downstream flow path; and a second relay flow path is allowed to flow from the second upstream flow path to the second downstream flow path by overlapping with the second upstream flow path and the second downstream flow path according to the relative rotation between the second valve component and the first valve component, and the flow of the second fluid from the second upstream flow path to the second downstream flow path is blocked by not overlapping with at least one of the second upstream flow path and the second downstream flow path.

[0014] Method 3. The temperature control device according to Method 2, wherein, in the valve device, when the area overlapping with the first relay flow path at the opening end of the first upstream flow path and the opening end of the first downstream flow path on the surface opposite to the second valve component in the first valve component is maximized, the flow of the second fluid from the second upstream flow path to the second downstream flow path is blocked; when the area overlapping with the second relay flow path at the opening end of the second upstream flow path and the opening end of the second downstream flow path on the surface opposite to the second valve component in the first valve component is maximized, the flow of the first fluid from the first upstream flow path to the first downstream flow path is blocked.

[0015] Method 4. The temperature control device according to Method 3, wherein, in the valve device, when the first valve component and the second valve component rotate relative to each other from a state in which the area of ​​the opening end of the first upstream flow path and the opening end of the first downstream flow path, which are open on the surface opposite to the second valve component, overlaps with the first relay flow path to the state in which the flow of the first fluid from the first upstream flow path to the first downstream flow path is blocked, the area of ​​the opening end of the first upstream flow path and the opening end of the first downstream flow path overlapping with the first relay flow path gradually decreases, and the area of ​​the opening end of the second upstream flow path and the opening end of the second downstream flow path overlapping with the second relay flow path gradually increases.

[0016] Method 5. A temperature control device according to any one of Methods 2 to 4, wherein the first valve component further has a first bypass flow path and a second bypass flow path respectively opened on a surface opposite to the second valve component and on a surface different from the surface opposite to the second valve component; the first relay flow path allows the first fluid to flow from the first upstream flow path to the first bypass flow path when blocking the flow of the first fluid from the first upstream flow path to the first downstream flow path; the first relay flow path allows the first fluid to flow from the first upstream flow path to the first downstream flow path and the first bypass flow path when overlapping with the first upstream flow path, the first downstream flow path, and the first bypass flow path; the second relay flow path allows the second fluid to flow from the second upstream flow path to the second bypass flow path when blocking the flow of the second fluid from the second upstream flow path to the second downstream flow path; the second relay flow path allows the second fluid to flow from the second upstream flow path to the second downstream flow path and the second bypass flow path when overlapping with the second upstream flow path, the second downstream flow path, and the second bypass flow path.

[0017] Method 6. A temperature control device according to any one of Methods 2 to 5, wherein the first valve component further has a return flow path, a first branch flow path, and a second branch flow path respectively opened on a face opposite to the second valve component and on a face different from the face opposite to the second valve component, the return flow path receiving the first fluid, the second fluid, or the first fluid and the second fluid after temperature control by the supply pipe, the first branch flow path being connected to the first fluid supply device, the second branch flow path being connected to the second fluid supply device, and the second valve component further having a third relay flow path, which, depending on the relative rotation between the second valve component and the first valve component, allows fluid to flow from the return flow path to the first branch flow path by overlapping with the return flow path and the first branch flow path, and allows fluid to flow from the return flow path to the second branch flow path by overlapping with the return flow path and the second branch flow path.

[0018] Method 7. A plasma etching apparatus having a chuck for holding a wafer and a temperature control device as described in any one of methods 1 to 6.

[0019] Method 8. The plasma etching apparatus according to Method 7, wherein the first fluid and the second fluid are liquid coolants, and the temperature control device supplies the first fluid, the second fluid, or the first fluid and the second fluid from the supply pipe to the flow path formed in the suction cup.

[0020] Method 9. The plasma etching apparatus according to Method 7, wherein the first fluid and the second fluid are gases, and the temperature control device supplies the first fluid, the second fluid, or the first fluid and the second fluid from the supply tube to the space between the chuck and the wafer.

[0021] Method 10. The plasma etching apparatus according to any one of Methods 7 to 9, wherein the temperature control device cools the first fluid via a reverse Brayton cycle cooling cycle device.

[0022] Method 11. A semiconductor manufacturing system having a semiconductor manufacturing apparatus and a temperature control device as described in any one of methods 1 to 6.

[0023] Method 12. A semiconductor manufacturing system comprising a temperature control device according to any one of methods 1 to 6 and a plurality of semiconductor manufacturing apparatuses, wherein the temperature control device has a plurality of valve devices and a plurality of supply pipes, a first fluid supply device has a plurality of first branch pipes into which the first fluid flows, a second fluid supply device has a plurality of second branch pipes into which the second fluid flows, and the plurality of valve devices are respectively connected to corresponding first branch pipes and second branch pipes, and connected to corresponding semiconductor manufacturing apparatuses via corresponding supply pipes.

[0024] In method 12, the semiconductor manufacturing apparatus may also include means for performing different processes.

[0025] In mode 12, the temperature control device can also cool the first fluid using a reverse Brayton cycle refrigeration cycle device.

[0026] According to embodiments of the present invention, it is possible to suppress size and footprint and improve the responsiveness and accuracy of temperature control. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of a plasma etching apparatus having a temperature control device according to one embodiment.

[0028] Figure 2 It constitutes Figure 1 An exploded perspective view of the valve assembly of the temperature control device shown.

[0029] Figure 3A It shows the composition Figure 2 A diagram of the first valve component of the valve assembly shown.

[0030] Figure 3B It shows the composition Figure 2 A diagram of the second valve component of the valve assembly shown.

[0031] Figure 4A This is an explanation Figure 2 The diagram shows the operation of the valve device.

[0032] Figure 4B This is an explanation Figure 2 The diagram shows the operation of the valve device.

[0033] Figure 4C This is an explanation Figure 2 The diagram shows the operation of the valve device.

[0034] Figure 4D This is an explanation Figure 2The diagram shows the operation of the valve device.

[0035] Figure 4E This is an explanation Figure 2 The diagram shows the operation of the valve device.

[0036] Figure 5 This is a simplified illustration of fluid temperature control using a refrigeration cycle device employing a reverse Brayton cycle. Figure 1 A diagram of a temperature control device and a plasma etching apparatus having the temperature control device.

[0037] Figure 6 It is a general representation of having Figure 1 A diagram of another plasma etching apparatus for the temperature control device shown.

[0038] Figure 7 This is a schematic diagram of a plasma etching apparatus with a temperature control device, showing a modified example.

[0039] Figure 8 It is a general representation of having Figure 1 A diagram of a semiconductor manufacturing system showing a temperature control device. Detailed Implementation

[0040] Hereinafter, an embodiment will be described in detail with reference to the accompanying drawings.

[0041] Temperature control device and plasma etching device

[0042] Figure 1 A plasma etching apparatus 100 having a temperature control device 1 in one embodiment is shown schematically.

[0043] The plasma etching apparatus 100 includes: a chuck 102 having a lower electrode 101; an upper electrode 103; and a chamber 104 housing the chuck 102 and the upper electrode 103. The chuck 102 holds the wafer W. The chuck 102 is, for example, an electrostatic chuck. The chuck 102, for example, internally houses the lower electrode 101.

[0044] In this embodiment, the fluid for which the temperature control device 1 has been temperature-controlled is supplied to a flow path formed in the chuck 102 (not shown). Thus, the temperature control device 1 controls the temperature of the wafer W via the chuck 102.

[0045] The temperature control device 1 includes: a valve device 2; a first fluid supply device 40 that supplies a first fluid to the valve device 2; a second fluid supply device 50 that supplies a second fluid to the valve device 2; a supply pipe 61 that allows the first fluid, the second fluid, or the first and second fluids flowing out of the valve device 2 to circulate; a discharge pipe 62 that allows the first fluid, the second fluid, or the first and second fluids that have passed through the suction cup 102 from the supply pipe 61 to return to the valve device 2; and a controller 70. The temperature control device 1 supplies the first fluid, the second fluid, or the first and second fluids from the valve device 2 to the supply pipe 61 according to the operation of the valve device 2.

[0046] The first fluid supply device 40 includes: a first temperature control unit 41; a first upstream pipe section 42 connecting the first temperature control unit 41 to the valve device 2 and located upstream of the valve device 2; and a first downstream pipe section 43 connecting the first temperature control unit 41 to the valve device 2 and located downstream of the valve device 2. The first fluid supply device 40 supplies first fluid, whose temperature is controlled by the first temperature control unit 41, from the first upstream pipe section 42 to the valve device 2. The first fluid supplied to the valve device 2 may be supplied to the supply pipe section 61 or not supplied to the supply pipe section 61 and may be discharged from the valve device 2 depending on the operation of the valve device 2.

[0047] When the first fluid is supplied to the supply pipe section 61, the first fluid returns to the valve device 2 after passing through the suction cup 102, and is then discharged from the valve device 2. The first downstream pipe section 43 receives the first fluid discharged from the valve device 2 after being supplied to the supply pipe section 61 or without being supplied to the supply pipe section 61, and delivers it to the first temperature control unit 41. The first fluid flowing from the first downstream pipe section 43 into the first temperature control unit 41 flows into the first upstream pipe section 42 after being subjected to temperature control again by the first temperature control unit 41.

[0048] The second fluid supply device 50 includes: a second temperature control unit 51; a second upstream pipe section 52 connecting the second temperature control unit 51 to the valve device 2 and located upstream of the valve device 2; and a second downstream pipe section 53 connecting the second temperature control unit 51 to the valve device 2 and located downstream of the valve device 2. The second fluid supply device 50 supplies a second fluid, whose temperature is controlled by the second temperature control unit 51 to be different from that of the first fluid, from the second upstream pipe section 52 to the valve device 2. The second fluid supplied to the valve device 2 may be supplied to the supply pipe section 61 or not supplied to the supply pipe section 61 and discharged from the valve device 2 depending on the operation of the valve device 2.

[0049] When the second fluid is supplied to the supply pipe section 61, the second fluid returns to the valve device 2 after passing through the suction cup 102, and is then discharged from the valve device 2. The second downstream pipe section 53 receives the second fluid discharged from the valve device 2 after being supplied to the supply pipe section 61 or without being supplied to the supply pipe section 61, and delivers it to the second temperature control unit 51. The second fluid flowing from the second downstream pipe section 53 into the second temperature control unit 51 flows into the second upstream pipe section 52 after being temperature-controlled again by the second temperature control unit 51.

[0050] In this embodiment, as described above, a first fluid and a second fluid can be supplied from the valve device 2 to the supply pipe 61 based on the operation of the valve device 2. In this embodiment, the temperature of the first fluid, which is temperature-controlled by the first temperature control unit 41, is set to be lower than the temperature of the second fluid, which is temperature-controlled by the second temperature control unit 51. Therefore, when the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe 61, temperature control of the mixed fluid based on an intermediate temperature between the temperatures of the first fluid and the second fluid is possible.

[0051] When the first fluid and the second fluid are supplied from the valve device 2 to the supply pipe section 61 as described above, the mixture of the first fluid and the second fluid, after passing through the suction cup 102 and returning to the valve device 2, is distributed from the valve device 2 to the first fluid supply device 40 and the second fluid supply device 50 and discharged. In this specification, the fluid discharged to the first fluid supply device 40 side of the mixture is considered the first fluid, and the fluid discharged to the second fluid supply device 50 side of the mixture is considered the second fluid. As described above, the first fluid, after being supplied from the valve device 2 to the supply pipe section 61 with the first fluid and the second fluid, flows back to the first temperature control unit 41 and, after being temperature-controlled again by the first temperature control unit 41, flows into the first upstream pipe section 42. The second fluid, after being temperature-controlled again by the second temperature control unit 51, flows into the second upstream pipe section 52.

[0052] In this embodiment, the first fluid and the second fluid are the same liquid. The first fluid and the second fluid may also be fluoride-based saline solutions, alcohol-based saline solutions, ether-based saline solutions, water, etc. There are no particular limitations on the first fluid and the second fluid.

[0053] Valve device

[0054] The valve device 2 has a first valve component 10 and a second valve component 20 that are in contact with each other and can rotate relative to each other while maintaining the contact state, and a drive device 30. The drive device 30 applies a power to rotate the first valve component 10 and the second valve component 20 relative to each other. The drive device 30 includes, for example, an electric motor to rotate the first valve component 10 and the second valve component 20 relative to each other. The drive device 30 is controlled by a controller 70.

[0055] The valve device 2 sets the fluid supplied from the valve device 2 to the supply pipe section 61 as a first fluid, a second fluid, or a first fluid and a second fluid, based on the relative rotation of the first valve component 10 and the second valve component 20. When the first fluid and the second fluid are supplied to the supply pipe section 61, the mixing ratio of the first fluid and the second fluid can be controlled based on the relative rotation of the first valve component 10 and the second valve component 20.

[0056] Figure 2 This is an exploded perspective view of valve device 2, showing the first valve component 10 and the second valve component 20. Figure 3A This is a diagram showing the first valve component 10. Figure 3B This is a diagram showing the second valve component 20. Referring hereafter... Figures 2-3B The first valve component 10 and the second valve component 20 are described in detail.

[0057] The first valve component 10 is a circular plate-shaped component. The first valve component 10 has a first upstream flow path 11U, a first downstream flow path 11D, a first bypass flow path 11B, a second upstream flow path 12U, a second downstream flow path 12D, a second bypass flow path 12B, a return flow path 13, a first branch flow path 131, and a second branch flow path 132.

[0058] The first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 each open on a first surface S1 and a second surface S2 of the first valve component 10 opposite to the second valve component 20, respectively. The first surface S1 of the first valve component 10 is the side that contacts the second valve component 20. In this embodiment, the second surface S2 is the surface opposite to the first surface S1, and each of the above-mentioned flow paths extends along the axial direction of the circular plate-shaped first valve component 10. However, the formation of the flow paths is not limited to the example shown in the figure. For example, some or all of the above-mentioned flow paths may open on the first surface S1 and also open on the side of the first valve component 10.

[0059] A first upstream side pipe section 42 of a first fluid supply device 40 is connected to a first upstream flow path 11U. First fluid is supplied to the first upstream flow path 11U. A supply pipe section 61 is connected to a first downstream flow path 11D. A first downstream side pipe section 43 of the first fluid supply device 40 is connected to a first bypass flow path 11B. Figure 2 In the diagram, the first upstream pipe section 42, the supply pipe section 61, and the first downstream pipe section 43 are represented by double-dotted lines.

[0060] A second upstream side pipe section 52 of the second fluid supply device 50 is connected to the second upstream flow path 12U. Second fluid is supplied to the second upstream flow path 12U. A supply pipe section 61 is connected to the second downstream flow path 12D. A second downstream side pipe section 53 of the second fluid supply device 50 is connected to the second bypass flow path 12B. Figure 2 In the middle, the second upstream side pipe section 52, the supply pipe section 61, and the second downstream side pipe section 53 are represented by double-dotted lines.

[0061] A discharge pipe 62 is connected to the return flow path 13. A first downstream pipe 43 of the first fluid supply device 40 is connected to the first branch flow path 131. A second downstream pipe 53 of the second fluid supply device 50 is connected to the second branch flow path 132.

[0062] The second valve component 20 is a circular plate-shaped component. In this embodiment, the first valve component 10 is fixed, and the second valve component 20 is rotated relative to the first valve component 10 by the drive device 30. However, it is also possible that the second valve component 20 is fixed, and the first valve component 10 rotates.

[0063] The second valve component 20 has groove-shaped first relay flow path 21, second relay flow path 22, and third relay flow path 23 recessed from the surface opposite to the first valve component 10. Additionally, the second valve component 20 has a shaft connection hole 24 at its center. The drive device 30, for example, connects a rotary drive shaft to the shaft connection hole 24. Thus, the second valve component 20 can be rotated using the drive device 30.

[0064] The first relay flow path 21 is configured to be at least partially opposite to the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. The second relay flow path 22 is configured to be at least partially opposite to the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. The third relay flow path 23 is configured to be at least partially opposite to the return flow path 13, the first branch flow path 131, and the second branch flow path 132. The first relay flow path 21, the second relay flow path 22, and the third relay flow path 23 change the overlap state with the flow path in the corresponding first valve component 10 according to the rotation of the second valve component 20 relative to the first valve component 10, thereby switching the state in which the first fluid, the second fluid, or the first fluid and the second fluid flow out from the valve device 2. The first relay flow path 21, the second relay flow path 22, and the third relay flow path 23 will be described in detail below.

[0065] The first relay flow path 21 overlaps with the first upstream flow path 11U and the first downstream flow path 11D depending on the rotation of the second valve component 20 relative to the first valve component 10 (in other words, the position in the direction of rotation), thereby allowing the first fluid to flow from the first upstream flow path 11U to the first downstream flow path 11D (first fluid supply state). Alternatively, the first relay flow path 21 may not overlap with at least one of the first upstream flow path 11U and the first downstream flow path 11D depending on the rotation of the second valve component 20 relative to the first valve component 10 to a state different from the first fluid supply state, thereby blocking the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D (first fluid blocking state). In this embodiment, in the first fluid blocking state, the first relay flow path 21 does not overlap with the first downstream flow path 11D. At this time, the flat portion of the second valve component 20 blocks the first downstream flow path 11D, thereby blocking the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D.

[0066] The first fluid supply state includes the following states: a fully open supply state, where the area overlapping the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which are open on the first surface S1 of the first valve component 10 opposite to the second valve component 20, with the first relay flow path 21 is maximized; and a supply and bypass state, where the first relay flow path 21 overlaps with the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. In the supply and bypass state, the first fluid is allowed to flow from the first upstream flow path 11U to the first downstream flow path 11D and the first bypass flow path 11B. The first fluid flowing into the first bypass flow path 11B flows into the first downstream side pipe section 43.

[0067] When the supply amount of the first fluid to the supply pipe 61 is reduced relative to the fully open supply state, the first fluid is supplied in a supply and bypass state. When the supply and bypass state is changed from the fully open supply state and the second valve component 20 is rotated in a direction away from the fully open supply state, the overlap between the first relay flow path 21 and the first bypass flow path 11B gradually increases, and the overlap between the first relay flow path 21 and the first upstream flow path 11U gradually decreases. Moreover, by making the first relay flow path 21 and the first upstream flow path 11U not overlap, the state of the first relay flow path 21 becomes the first fluid blocking state. In the first fluid blocking state, all the first fluid flowing into the first upstream flow path 11U flows into the first bypass flow path 11B and into the first downstream side pipe 43.

[0068] The second relay flow path 22 rotates and moves with the first relay flow path 21 according to the rotation of the second valve component 20 relative to the first valve component 10 (in other words, its position in the direction of rotation). The second relay flow path 22 overlaps with the second upstream flow path 12U and the second downstream flow path 12D according to the rotation of the second valve component 20 relative to the first valve component 10, thereby allowing the second fluid to flow from the second upstream flow path 12U to the second downstream flow path 12D (second fluid supply state). Alternatively, the second relay flow path 22 does not overlap with at least one of the second upstream flow path 12U and the second downstream flow path 12D according to the rotation of the second valve component 20 relative to the first valve component 10 to a state different from the second fluid supply state, thereby blocking the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D (second fluid blocking state). In this embodiment, in the second fluid blocking state, the second relay flow path 22 does not overlap with the second downstream flow path 12D. At this time, the flat portion of the second valve component 20 blocks the second downstream flow path 12D, thereby blocking the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D.

[0069] The second fluid supply state includes the following states: a fully open supply state, where the area overlapping the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 at the opening of the first surface S1 of the first valve component 10 opposite to the second valve component 20 is maximized; and a supply and bypass state, where the second relay flow path 22 overlaps with the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. In the supply and bypass state, the second fluid is allowed to flow from the second upstream flow path 12U to the second downstream flow path 12D and the second bypass flow path 12B. The second fluid flowing into the second bypass flow path 12B flows into the second downstream side pipe section 53.

[0070] When the supply amount of the second fluid to the supply pipe 61 is reduced relative to the fully open supply state, the second fluid is supplied in a supply and bypass state. When the supply and bypass state is changed from the fully open supply state and the second valve component 20 is rotated away from the fully open supply state, the overlap between the second relay flow path 22 and the second bypass flow path 12B gradually increases, and the overlap between the second relay flow path 22 and the second upstream flow path 12U gradually decreases. Moreover, the second relay flow path 22 and the second upstream flow path 12U do not overlap, and the state of the second relay flow path 22 becomes the second fluid blocking state. In the second fluid blocking state, all the second fluid flowing into the second upstream flow path 12U flows into the second bypass flow path 12B and into the second downstream side pipe 53.

[0071] In this embodiment, when the area where the opening ends of the first upstream flow path 11U and the first downstream flow path 11D of the first valve component 10, which is open on the first surface S1 opposite to the second valve component 20, overlap with the first relay flow path 21 to the maximum extent, the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D is blocked. That is, when the first fluid is in a fully open supply state, a second fluid blocking state is formed. On the other hand, when the area where the opening ends of the second upstream flow path 12U and the second downstream flow path 12D, which is open on the first surface S1, overlap with the second relay flow path 22 becomes the maximum, the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D is blocked. That is, when the second fluid is in a fully open supply state, a first fluid blocking state is formed.

[0072] Furthermore, when the second valve component 20 rotates from a state where the area overlapping the opening ends of the first upstream flow path 11U and the first downstream flow path 11D with the first relay flow path 21 is maximized, toward a state that blocks the flow of the first fluid from the first upstream flow path 11U to the first downstream flow path 11D, the area overlapping the opening ends of the first upstream flow path 11U and the first downstream flow path 11D with the first relay flow path 21 gradually decreases, while the area overlapping the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 gradually increases. On the other hand, when the second valve component 20 rotates from a state where the area overlapping the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 is maximized, toward a state that blocks the flow of the second fluid from the second upstream flow path 12U to the second downstream flow path 12D, the area overlapping the opening ends of the second upstream flow path 12U and the second downstream flow path 12D with the second relay flow path 22 gradually decreases, while the area overlapping the opening ends of the first upstream flow path 11U and the first downstream flow path 11D with the first relay flow path 21 gradually increases.

[0073] That is, in valve device 2, when the first fluid is in a supply and bypass state and the second fluid is in a supply and bypass state, if the supply amount of the first fluid is increased by rotating the second valve component 20, the supply amount of the second fluid is decreased, and if the supply amount of the first fluid is decreased, the supply amount of the second fluid is increased. Thus, the mixing ratio of the first fluid and the second fluid can be changed.

[0074] The first fluid, the second fluid, or the first and second fluids supplied from valve device 2 to suction cup 102 via supply pipe 61, return to valve device 2 via discharge pipe 62 after passing through suction cup 102. The returned first fluid, second fluid, or first and second fluids return to first fluid supply device 40, second fluid supply device 50, or first fluid supply device 40 and second fluid supply device 50. Third relay flow path 23 switches the fluid returning to first fluid supply device 40 and second fluid supply device 50.

[0075] In detail, the third relay flow path 23 overlaps with the return flow path 13 and the first branch flow path 131 according to the rotation of the second valve component 20 relative to the first valve component 10 (in other words, the position in the direction of rotation), thereby allowing fluid to flow from the return flow path 13 to the first branch flow path 131. The third relay flow path 23 overlaps with the return flow path 13 and the second branch flow path 132 according to the rotation of the second valve component 20 relative to the first valve component 10, thereby allowing fluid to flow from the return flow path 13 to the second branch flow path 132. The third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132 according to the rotation of the second valve component 20 relative to the first valve component 10, thereby allowing fluid to flow from the return flow path 13 to the first branch flow path 131 and the second branch flow path 132.

[0076] More specifically, when only the first fluid is supplied to the supply pipe section 61, the third relay flow path 23 overlaps only with the return flow path 13 and the first branch flow path 131, thereby allowing the first fluid to flow from the return flow path 13 to the first branch flow path 131. When only the second fluid is supplied to the supply pipe section 61, the third relay flow path 23 overlaps only with the return flow path 13 and the second branch flow path 132, thereby allowing the second fluid to flow from the return flow path 13 to the second branch flow path 132.

[0077] When the first fluid and the second fluid are supplied to the supply pipe section 61, the third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132, thereby allowing the first fluid to flow from the return flow path 13 to the first branch flow path 131 and the second fluid to flow from the return flow path 13 to the second branch flow path 132. When the third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132, the flow rate of the first fluid flowing into the first branch flow path 131 and the flow rate of the second fluid flowing into the second branch flow path 132 are determined based on the ratio of the area of ​​overlap between the third relay flow path 23 and the first branch flow path 131 to the area of ​​overlap between the third relay flow path 23 and the second branch flow path 132.

[0078] Figures 4A-4E This is a diagram illustrating the operation of valve device 2. Figures 4A-4E For ease of explanation, the first relay path 21, the second relay path 22, and the third relay path 23 are marked with shaded lines.

[0079] Figure 4A The diagram shows the fully open supply state of the first fluid. In this state, the areas where the opening ends of the first upstream flow path 11U and the first downstream flow path 11D, which open on the first surface S1, overlap with the first relay flow path 21 are maximized. The first relay flow path 21 does not overlap with the first bypass flow path 11B. The second relay flow path 22 overlaps only with the second upstream flow path 12U and the second bypass flow path 12B. The third relay flow path 23 overlaps only with the return flow path 13 and the first branch flow path 131. Figure 4A In the fully open supply state of the first fluid shown, only the low-temperature first fluid is supplied to the supply pipe 61. Figure 4A The text is marked with a label indicating the state as "Cold Loop".

[0080] Figures 4B to 4D The supply and bypass states of the first fluid and the second fluid are shown. In this state, the first relay flow path 21 overlaps with the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B. The second relay flow path 22 overlaps with the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B. The third relay flow path 23 overlaps with the return flow path 13, the first branch flow path 131, and the second branch flow path 132. Figures 4B to 4D In both the supply and bypass states of the first fluid and the supply and bypass states of the second fluid, a low-temperature first fluid and a high-temperature second fluid are supplied to the supply pipe 61. Figures 4B to 4D The text is marked with a label indicating the state as "Mixing Loop".

[0081] exist Figure 4B In this process, the supply of the first fluid is greater than the supply of the second fluid. Figure 4B As an example, the second valve component 20 is shown from... Figure 4A The state has rotated by 11.25°. In Figure 4C In this process, the supply rate of the first fluid is the same as the supply rate of the second fluid. Figure 4C As an example, the second valve component 20 is shown from... Figure 4A The state has rotated by 22.5°. In Figure 4D In this process, the supply of the first fluid is less than the supply of the second fluid. Figure 4D As an example, the second valve component 20 is shown from... Figure 4A The state has been rotated by 33.75°.

[0082] Figure 4E The diagram shows the fully open supply state of the second fluid. In this state, the area overlapping the opening ends of the second upstream flow path 12U and the second downstream flow path 12D on the first surface S1 with the second relay flow path 22 is maximized. The second relay flow path 22 does not overlap with the second bypass flow path 12B. The first relay flow path 21 overlaps only with the first upstream flow path 11U and the first bypass flow path 11B. The third relay flow path 23 overlaps only with the return flow path 13 and the second branch flow path 132. Figure 4E In the fully open supply state of the second fluid shown, only the high-temperature first fluid is supplied to the supply pipe 61. Figure 4E The text is marked with a label indicating the state as "Hot Loop".

[0083] like Figures 2 to 4E As shown, the first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 are each a sector extending in an arc shape along the rotation direction of the second valve component 20. The widths of the first upstream flow path 11U, the first downstream flow path 11D, the first bypass flow path 11B, the second upstream flow path 12U, the second downstream flow path 12D, the second bypass flow path 12B, the return flow path 13, the first branch flow path 131, and the second branch flow path 132 in the radial direction perpendicular to the rotation center axis of the second valve component 20 are constant except at both ends of the rotation direction (however, they can also be constant throughout the entire region).

[0084] The first upstream flow path 11U is formed radially inward compared to the first downstream flow path 11D and the first bypass flow path 11B. The first downstream flow path 11D and the first bypass flow path 11B are arranged in the rotational direction. The second upstream flow path 12U is formed radially inward compared to the second downstream flow path 12D and the second bypass flow path 12B. The second downstream flow path 12D and the second bypass flow path 12B are arranged in the rotational direction. The return flow path 13 is formed radially inward compared to the first branch flow path 131 and the second branch flow path 132. The first branch flow path 131 and the second branch flow path 132 are arranged in the rotational direction. With the above configuration, the number of flow paths can be maximized and the flow path area can be maximized.

[0085] The first relay flow path 21 has a shape that integrates a fan-shaped inner peripheral portion that overlaps with the first upstream flow path 11U and an outer peripheral portion that overlaps with the first downstream flow path 11D and / or the first bypass flow path 11B, formed at a position radially outward from the inner peripheral portion. The inner and outer peripheral portions extend in an arc shape along the rotation direction of the second valve component 20. The length of the inner peripheral portion of the first relay flow path 21 in the rotation direction is greater than that of the outer peripheral portion. Regardless of the overlap state between the outer peripheral portion and the first downstream flow path 11D and / or the first bypass flow path 11B, the inner peripheral portion of the first relay flow path 21 always overlaps with the first upstream flow path 11U. The inner and outer peripheral portions of the first relay flow path 21 are fan-shaped structures extending in an arc along the rotation direction of the second valve component 20. Similarly, the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B are also fan-shaped structures extending in an arc along the rotation direction of the second valve component 20. This achieves a constant rate of change in flow rate when the second valve component 20 rotates, in order to change the mixing ratio of the first fluid and the second fluid. The relationships between the second relay flow path 22 and the second upstream flow path 12U, the second downstream flow path 12D, and the second bypass flow path 12B, as well as the relationships between the third relay flow path 23 and the return flow path 13, the first branch flow path 131, and the second branch flow path 132, are the same as the relationships between the first relay flow path 21 and the first upstream flow path 11U, the first downstream flow path 11D, and the first bypass flow path 11B, and therefore are omitted from the description. Furthermore, the structure of the flow paths in the valve device 2 is not limited to the form described in this embodiment. For example, the first bypass flow path 11B and the second bypass flow path 12B can also be omitted.

[0086] The temperature control device 1 of this embodiment described above includes: a valve device 2; a first fluid supply device 40 that supplies a first fluid to the valve device 2; a second fluid supply device 50 that supplies a second fluid to the valve device 2; and a supply pipe 61 that allows the first fluid, the second fluid, or the first and second fluids flowing out of the valve device 2 to circulate, and temperature control is performed on the fluids flowing through the supply pipe 61. Furthermore, the valve device 2 has a first valve member 10 and a second valve member 20 that are in contact with each other and can rotate relative to each other while maintaining contact. Moreover, depending on the relative rotation of the first valve member 10 and the second valve member 20, the first fluid, the second fluid, or the first and second fluids are supplied from the valve device 2 to the supply pipe 61.

[0087] With this structure, the switching or mixing of the first fluid and the second fluid can be achieved through the relative rotation of the first valve component 10 and the second valve component 20. Therefore, by reducing the number of components, the size and footprint of the valve device 2 can be reduced. Furthermore, the switching or mixing of the first fluid and the second fluid can be performed with a single control input generated by the relative rotation of the first valve component 10 and the second valve component 20, improving the responsiveness during the switching or mixing of the first and second fluids. Additionally, by reducing the control input, control becomes simpler. Therefore, the size and footprint can be reduced, and the responsiveness and accuracy of temperature control can be improved.

[0088] Furthermore, the plasma etching apparatus 100 improves the responsiveness and accuracy of temperature control and also reduces the occupied area. This, in turn, increases the yield of devices requiring high aspect ratio vias.

[0089] Figure 5 This is a schematic illustration of fluid temperature control via a reverse Brayton cycle refrigeration cycle unit 300. Figure 1 The figure shows a temperature control device 1 and a plasma etching apparatus 100 having the temperature control device 1. The refrigeration cycle device 300 is a reverse Brayton cycle refrigeration cycle device that circulates a natural refrigerant (air, nitrogen, etc.). The refrigeration cycle device 300 is connected to a first temperature control unit 41 of a first fluid supply device 40. The first temperature control unit 41 is a heat exchanger that cools the first fluid by exchanging heat with the natural refrigerant circulated in the refrigeration cycle device 300.

[0090] The refrigeration cycle device 300 connects the compressor 301, cooler 302, recovery heat exchanger 303, and expander 304 through a refrigerant circulation path 305 in a manner that allows natural refrigerant to circulate sequentially. The downstream portion of the expander 304 and the upstream portion of the compressor 301 in the refrigerant circulation path 305 are connected to a first temperature control unit 41. Natural refrigerant, which expands and becomes cold in the expander 304, flows into the first temperature control unit 41 to cool the first fluid. In this example, the natural refrigerant flowing out of the first temperature control unit 41 passes through the recovery heat exchanger 303 before flowing into the compressor 301. Thus, the natural refrigerant flowing out of the compressor 301 and through the cooler 302 is cooled by the natural refrigerant flowing out of the first temperature control unit 41 before flowing into the expander 304. With this structure, the temperature of the natural refrigerant flowing out of the expander 304 can be effectively reduced.

[0091] The compressor 301 and expander 304 are connected to the drive shaft 307A of a shared motor 307. Thus, the compressor 301 and expander 304 rotate in conjunction with the drive shaft 307A.

[0092] Cooler 302 receives cooling water from cooling water circulation device 310 and uses the cooling water to cool the high-temperature refrigerant flowing from compressor 301. Cooling water circulation device 310 has a common flow path 311 and a first branch flow path 312 and a second branch flow path 313 branching from the downstream end of the common flow path 311. The common flow path 311 allows cooling water to circulate and distributes it to the first branch flow path 312 and the second branch flow path 313.

[0093] The first branch flow path 312 is connected to the cooler 302. The cooler 302 cools the natural refrigerant by exchanging heat between the cooling water from the first branch flow path 312 and the natural refrigerant. In this example, the second branch flow path 313 is connected to the second temperature control unit 51 of the second fluid supply device 50. The second temperature control unit 51 is a heat exchanger that cools the second fluid by exchanging heat between the second fluid and the cooling water from the cooling water circulation device 310. In this structure, by sharing the cooling source for the cooler 302 and the second fluid, the complexity and size of the device structure can be suppressed. The cooling water can be, for example, tap water or well water.

[0094] In recent years, there has been a growing demand for temperature control in plasma etching apparatuses, particularly in extremely low-temperature regions such as below -70°C. Reverse Brayton cycle refrigeration systems 300 typically provide efficient cooling in these regions, in other words, with a high coefficient of performance (COP). Currently, vapor compression refrigeration systems using fluorinated refrigerants generally experience reduced efficiency when cooling in extremely low-temperature regions such as below -70°C. Furthermore, the use of ternary refrigeration systems may lead to larger scale operations and the need for specialized refrigerants. Considering these factors, a temperature control device 1 using a reverse Brayton cycle refrigeration system 300 can be considered a technology that offers advantages over vapor compression refrigeration systems in implementing temperature control in the temperature range envisioned for future applications in plasma etching apparatuses.

[0095] Another plasma etching device

[0096] Figure 6 It is a general representation of having Figure 1 A diagram of another plasma etching apparatus 100' of the temperature control device 1 shown. Figure 6 Elements in the structure shown that are the same as those in the above embodiments are labeled with the same reference numerals, and repeated descriptions are omitted.

[0097] Figure 6 The temperature control device 1 shown provides a first fluid, a second fluid, or a first fluid and a second fluid from the supply tube 61 to the space between the chuck 102 and the wafer W. Figure 6 The temperature control device 1 shown uses gas as both the first and second fluids. At these points, Figure 6 The structure shown is Figure 1 The structures are different. The thermal conductivity of the first fluid is different from that of the second fluid. For example, one of the first fluid and the second fluid can be argon, and the other can be helium. In the plasma etching apparatus 100', the temperature of the wafer W is controlled by changing the thermal conductivity of the space between the chuck 102 and the wafer W by providing the first fluid, the second fluid, or both the first fluid and the second fluid.

[0098] in addition, Figure 6 The method shown can also be programmed. Figure 1 The implementation method shown.

[0099] Variations of temperature control devices

[0100] Figure 7 This is a schematic diagram of a plasma etching apparatus 100” with a modified temperature control device 1'. Figure 7 Elements in the structure shown that are the same as those in the above embodiments are labeled with the same reference numerals, and repeated descriptions are omitted.

[0101] Figure 7 The temperature control device 1' shown is connected to a proportional three-way valve 63 at the downstream end of the supply pipe 61. A first distribution pipe 64 is connected to one of the two distribution ports of the proportional three-way valve 63, and a second distribution pipe 65 is connected to the other. The downstream ends of the first distribution pipe 64 and the second distribution pipe 65 are connected to different flow paths of the suction cup 102.

[0102] Specifically, the first distribution pipe 64 provides the suction cup 102 with a temperature-controlled first fluid, a second fluid, or both a first fluid and a second fluid via a flow path that has a fluid inlet near the center of the suction cup 102 and extends outward from the fluid inlet. The second distribution pipe 65 provides the suction cup 102 with a temperature-controlled first fluid, a second fluid, or both a first fluid and a second fluid via a flow path that has a fluid inlet near the outer periphery of the suction cup 102. The fluid supplied from the first distribution pipe 64 to the suction cup 102 near the center flows out of the suction cup 102 near the outer periphery and returns to the valve device 2 via the first relay pipe 66. The fluid supplied from the second distribution pipe 65 to the suction cup 102 near the outer periphery flows out of the suction cup 102 near the center and returns to the valve device 2 via the second relay pipe 67.

[0103] exist Figure 7 In the structure shown, the use of a proportional three-way valve 63 increases the variability of temperature control. This is particularly advantageous in this example, as it helps to suppress radial temperature deviations of the suction cup 102.

[0104] Semiconductor manufacturing system

[0105] Figure 8 It is a general representation of having multiple Figure 1 A diagram of a semiconductor manufacturing system 200 with temperature control device 1 shown.

[0106] The semiconductor manufacturing system 200 includes multiple semiconductor manufacturing apparatuses 100a, 100b, 100c and the aforementioned temperature control device 1. However, the temperature control device 1 includes multiple valve devices 2, multiple supply pipe sections 61, and discharge pipe sections 62.

[0107] The first fluid supply device 40 has a plurality of first branch pipes 42d that function as a first upstream pipe section 42, allowing the first fluid to flow through the plurality of first branch pipes 42d. The second fluid supply device 50 has a plurality of second branch pipes 52d that function as a second upstream pipe section 52, allowing the second fluid to flow through the plurality of second branch pipes 52d. A plurality of valve devices 2 are respectively connected to the corresponding first branch pipe section 42d and second branch pipe section 52d, and are connected to any one of the corresponding semiconductor manufacturing apparatuses 100a, 100b, and 100c via the corresponding supply pipe section 61 and discharge pipe section 62. In addition, the plurality of valve devices 2 are also respectively connected to a first branch return pipe section 43d that functions as a first downstream pipe section 43 and a second branch return pipe section 53d that functions as a second downstream pipe section 53.

[0108] Multiple semiconductor manufacturing apparatuses 100a, 100b, and 100c include devices for performing different processes. These apparatuses may include, for example, plasma etching and ashing devices, or other devices for performing other processes. Multiple valve devices 2 corresponding to the multiple semiconductor manufacturing apparatuses performing the same processes can be controlled synchronously or independently. Alternatively, multiple valve devices 2 corresponding to the multiple semiconductor manufacturing apparatuses performing different processes can be controlled independently.

[0109] The first fluid supply device 40 passes through Figure 5 The reverse Brayton cycle refrigeration cycle unit 300 shown performs temperature control (cooling) on ​​the first fluid. The first fluid supply unit 40 supplies the temperature-controlled first fluid from the refrigeration cycle unit 300 to multiple semiconductor manufacturing devices 100a, 100b, and 100c via multiple valve devices 2 for temperature control of the multiple semiconductor manufacturing devices 100a, 100b, and 100c. The second fluid supply unit 50 supplies fluid from... Figure 5 The cooling water in the cooling water circulation device 310 shown is temperature-controlled, and a second fluid is supplied to multiple semiconductor manufacturing devices 100a, 100b, and 100c via multiple valve devices 2 for temperature control of the multiple semiconductor manufacturing devices 100a, 100b, and 100c. Additionally, Figure 8 The semiconductor manufacturing system 200 shown has multiple semiconductor manufacturing devices 100a, 100b, 100c and the temperature control device 1 described above, but it can also be a structure that connects one semiconductor device to one temperature control device 1.

[0110] The embodiments of the present invention have been described above, but the present invention is not limited to the embodiments described above.

Claims

1. A temperature control device, comprising: Valve device; A first fluid supply device provides a first fluid to the valve device; A second fluid supply device provides a second fluid to the valve device; as well as A supply pipe that allows the first fluid, the second fluid, or both of the first and second fluids flowing from the valve assembly to circulate. The temperature control device uses the fluid flowing through the supply pipe to control the temperature. in, The valve device has a first valve component and a second valve component that are in contact with each other, and the first valve component and the second valve component are capable of rotating relative to each other while maintaining contact. Based on the relative rotation of the first valve component and the second valve component, the first fluid, the second fluid, or the first fluid and the second fluid are supplied from the valve device to the supply pipe.

2. The temperature control device according to claim 1, wherein, The first valve component has a first upstream flow path, a first downstream flow path, a second upstream flow path, and a second downstream flow path, which are respectively opened on a surface opposite to the second valve component and on a surface different from the surface opposite to the second valve component. The first upstream flow path is supplied with the first fluid, and the second upstream flow path is supplied with the second fluid. The supply pipe receives the first fluid from the first downstream flow path and receives the second fluid from the second downstream flow path. The second valve component has: The first relay flow path, based on the relative rotation between the second valve component and the first valve component, allows the first fluid to flow from the first upstream flow path to the first downstream flow path by overlapping with the first upstream flow path and the first downstream flow path, and blocks the flow of the first fluid from the first upstream flow path to the first downstream flow path by not overlapping with at least one of the first upstream flow path and the first downstream flow path; as well as The second relay flow path, based on the relative rotation between the second valve component and the first valve component, allows the second fluid to flow from the second upstream flow path to the second downstream flow path by overlapping with the second upstream flow path and the second downstream flow path, and blocks the flow of the second fluid from the second upstream flow path to the second downstream flow path by not overlapping with at least one of the second upstream flow path and the second downstream flow path.

3. A plasma etching apparatus, comprising: The suction cup holds the chip; and The temperature control device according to claim 1.

4. A semiconductor manufacturing system comprising a semiconductor manufacturing apparatus and a temperature control device as described in claim 1.

5. A semiconductor manufacturing system comprising the temperature control device of claim 1 and a plurality of semiconductor manufacturing devices, wherein, The temperature control device includes multiple valve devices and multiple supply pipe sections. The first fluid supply device has multiple first branch pipe sections, into which the first fluid flows; the second fluid supply device has multiple second branch pipe sections, into which the second fluid flows. The plurality of valve devices are respectively connected to the corresponding first branch pipe and the second branch pipe, and are connected to the corresponding semiconductor manufacturing apparatus via the corresponding supply pipe.

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