Preparation method of quartz gas guide tube for chip advanced process

Abstract

This application relates to the field of semiconductor manufacturing auxiliary component preparation technology, and more specifically, to a method for preparing a quartz gas guide tube for advanced chip manufacturing processes. The quartz gas guide tube includes a tube body and a flange. The preparation method includes: a mating process: clamping the flange and the tube body on a rotating device, the device driving both to rotate synchronously, and fusing the mating parts together using an oxyhydrogen flame; a side-hole drilling process: drilling side holes on the side of the tube body using a laser; a sealing process: sealing the end face of the tube body; and a hole-forming process: drilling holes in the sealed end of the tube body using a cutting tool to form end holes; wherein, during the mating process, high-pressure gas is introduced into the tube body simultaneously with the mating. This application solves the problems of uneven wafer film formation, excessive particulate matter, and short service life of existing quartz gas guide tubes.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing auxiliary component preparation technology, and more specifically, to a method for preparing a quartz gas conduit for advanced chip manufacturing processes. Background Technology

[0002] Quartz gas delivery tubes are key components in chip manufacturing processes, primarily used to deliver process gases to wafers. Their performance directly affects the gas flow rate and stability, thus determining the wafer yield. Gas delivery tubes play an indispensable role in semiconductor manufacturing processes.

[0003] Quartz gas guide tubes present several problems in advanced chip manufacturing processes: First, uneven wafer film deposition, mainly due to insufficient machining precision of the gas guide tube's side holes and unstable gas delivery, directly affecting chip processing quality; second, excessive particulate matter, as a fractured layer easily forms on the surface of the gas guide tube after machining, which is a source of particulate matter and can easily trigger alarms during wafer processing, interfering with normal production; third, short service life, as internal stress easily develops in the gas guide tube during high-temperature processing, and if this internal stress is not effectively eliminated, it will easily break during use, increasing production costs and the risk of production interruption. In existing fabrication processes, problems such as internal bosses easily generated during the mating process, impurities easily left behind during drilling, and poor control of internal stress are the main causes of the above defects. Therefore, an optimized fabrication method is urgently needed to solve these problems. Summary of the Invention

[0004] The main objective of this invention is to propose a method for preparing a quartz gas conduit for advanced chip manufacturing processes, thereby solving the problems of uneven wafer film formation, excessive particulate matter, and short service life of existing quartz gas conduits.

[0005] To address the aforementioned technical problems, this invention proposes a method for fabricating a quartz gas guide tube for advanced chip manufacturing processes. The quartz gas guide tube includes a tube body and a flange. The fabrication method includes: Butt welding process: The flange and the pipe body are clamped on a rotating device, which drives the two to rotate synchronously, and the butt welding parts are fused together by an oxyhydrogen flame; Side hole drilling process: using a laser to drill side holes on the side of the tube body; Sealing process: Sealing the end face of the pipe body; And the end-hole punching process: using a cutting tool to punch holes in the sealing end of the pipe body to form end holes; During the docking process, high-pressure gas is introduced into the tube body at the same time as docking.

[0006] In the above technical solution, further, in the side hole drilling process, a semi-circular graphite rod is inserted into the tube body. The semi-circular graphite rod blocks the laser from penetrating the tube body, so that only the required side holes are formed on the tube body.

[0007] In any of the above technical solutions, further, during the side hole drilling process, gas is introduced into the tube body to remove molten quartz residue and volatiles generated during the laser drilling process.

[0008] In any of the above technical solutions, furthermore, in the side hole drilling process, a horizontal spiral processing path from the inside to the outside is used for laser drilling.

[0009] In any of the above technical solutions, the sealing process steps are further as follows: The assembled products are clamped and fixed, gas is introduced into the tube body, the sealing position is heated by hydrogen-oxygen flame, and the seal is separated by stretching outward with the moving mechanism. Then, the product is fitted together using a molding die, which is a high-purity graphite sealing molding die.

[0010] In any of the above technical solutions, the further steps of the end face punching process are as follows: A filling medium is added to the product to support the inside of the sealed end. Then, a tool is used to punch holes in the sealed end of the product to form end holes.

[0011] In any of the above technical solutions, the filling medium is further described as wax; solid wax is added to the product and melted to fill the inside of the sealing end of the product with liquid wax. After the liquid wax cools to solid, holes are drilled; the wax medium is removed after the drilling is completed.

[0012] In any of the above technical solutions, the preparation method further includes: cleaning, fire polishing, annealing and final inspection and cleaning steps; The cleaning process includes: high-temperature boiling cleaning and multiple engineering cleaning processes, including degreasing cleaning, nitric acid cleaning, hydrofluoric acid cleaning and pure water cleaning. Fire polishing: The entire surface of the product is polished using an oxyhydrogen flame at high temperature; Annealing: After the product is placed in an annealing furnace and kept at a constant temperature, it is cooled to room temperature in the air. Final inspection and cleaning: Inspect the product dimensions and appearance, and perform final cleaning after it passes the inspection.

[0013] In any of the above technical solutions, the preparation method further includes: flange processing step; The flange processing steps include, in sequence: raw material requisition, external cylindrical grinding, cutting the total length, internal diameter machining, high-temperature boiling cleaning, engineering inspection, engineering cleaning, fire polishing, annealing, and secondary engineering cleaning.

[0014] In any of the above technical solutions, the flange processing steps are further as follows: a. Issuance of round bar blanks: The flange diameter is B, and the blank diameter is B + (1mm - 3mm); the flange length is L1, and the blank length is L2 = n(L1 + H) + 3 + 3, where H is the thickness of the cutting tool and n is the number of flanges to be cut. b. External cylindrical grinding: Using a cutting tool with a grit size of 200#-600#, grind the outer diameter of the blank to the outer diameter dimension B of the flange, with the straightness controlled within 0.05 and the surface roughness Ra of the outer diameter controlled within 0.8μm; c. Total length: Using a cutting tool with a grit size of 200#-600#, the flange length L1 is machined, and the flatness and parallelism of the end face cut surface are controlled within 0.05. d. Internal diameter machining: First, use a 100#-200# solid metal tool to peck and drill holes for roughing, and then use a 230#-400# metal tool for finishing. The surface roughness Ra of the inner diameter after finishing is controlled within 0.8μm. e. Boil and wash at high temperature: Boil and wash in boiling water; f. Engineering Inspection: Inspect the dimensions and appearance of the flange; g. Engineering cleaning: (1) Wipe the flange surface with degreasing solution and rinse with pure water with a resistivity ≥10Ω・cm; (2) Remove the oxide layer by soaking in an 8%-10% nitric acid solution, and then rinse in a pure water tank; (3) Soak in 4%-8% hydrofluoric acid solution to remove impurities, then rinse in pure water. (4) Soak in a pure water bath to remove residual reagents, then rinse with pure water; h. Fire polishing: After the flange is machined, a loose and broken layer of 0.005-0.02mm will be formed on the surface. The outer surface is treated with a hydrogen-oxygen flame at high temperature to melt and remove the broken layer, making the flange transparent. i. Annealing: After polishing, the flange is placed in an annealing furnace at 1000-1200℃ for a certain period of time and then cooled to room temperature in the air.

[0015] j. Engineering cleaning: (1) Wipe the flange with degreasing solution and rinse with pure water with a resistivity ≥10Ω・cm; (2) Soak in 8%-10% nitric acid solution, then rinse in pure water. (3) Soak in 4%-8% hydrofluoric acid solution, then rinse in pure water. (4) Soak in a pure water tank, then rinse with pure water.

[0016] Beneficial effects: Compared with the prior art, the method of this application ensures that the gas guide tube undergoes multiple cleaning and fire polishing processes, resulting in no broken layers or particulate residues on the surface. This prevents impurities from falling off during gas delivery, avoiding triggering particulate alarms in the wafer process. The high machining precision of the side holes and end holes ensures stable and uniform gas flow, effectively improving wafer film uniformity and chip processing quality. After annealing, the product has low internal stress, making it less prone to breakage under long-term high temperature and high pressure conditions, significantly extending its service life, reducing the frequency of gas guide tube replacement, lowering production costs and equipment downtime, ensuring the continuity and stability of the chip production process, and meeting the high-performance requirements of advanced chip manufacturing processes for gas delivery components. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the quartz gas delivery tube; Figure 2 yes Figure 1 Sectional view at point AA; Figure 3 This is a structural schematic diagram of the flange blank; Figure 4 This is a schematic diagram of the flange blank cutting structure; Figure 5 This is a schematic diagram of the flange and pipe body connection of the present invention; Figure 6 This is a structural diagram of the flange and pipe body after connection without ventilation; Figure 7 This is a structural diagram of the flange and pipe body after the venting connection is completed; Figure 8 This is a schematic diagram of the structure of the drilled side hole of the present invention; Figure 9 This is a schematic diagram of the spiral machining path for drilling side holes according to the present invention; Figure 10 This is a schematic diagram of the machining path for drilling a side hole in a circular motion; Figure 11This is a schematic diagram of the sealing and stringing separation of the present invention; Figure 12 This is a schematic diagram of the sealing process; Figure 13 This is a schematic diagram of adding wax to the drill end face of the present invention; Figure 14 yes Figure 13 A schematic diagram of the structure of the melted wax; Figure 15 This is a schematic diagram of the structure behind the drill bit face of the present invention; Figure 16 This is a schematic diagram of the structure behind the drill bit without the addition of wax.

[0019] The annotations in the attached figures are explained as follows: 10. Pipe body; 11. Side hole; 12. End hole; 20. Flange. Detailed Implementation

[0020] Hereinafter, exemplary embodiments according to this application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are merely a part of the embodiments of this application, and not all of the embodiments of this application. It should be understood that this application is not limited to the exemplary embodiments described herein. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention.

[0021] It should be noted that, as shown in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, and these steps and elements do not constitute an exclusive list; the method or apparatus may also include other steps or elements.

[0022] If the embodiments of the present invention involve directional indicators (such as up, down, left, right, front, back, etc.), the directional indicators are only used to explain the relative positional relationship and movement of the components in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicators will also change accordingly.

[0023] In this invention, unless otherwise explicitly specified and limited, the terms "connection," "fixed," etc., should be interpreted broadly. For example, "fixed" can mean a fixed connection, a detachable connection, or an integral part; it can mean a mechanical connection or an electrical connection; it can mean a direct connection or an indirect connection through an intermediate medium; it can mean the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0024] Furthermore, if the embodiments of this invention involve descriptions such as "first" or "second," these descriptions are for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of those features. Additionally, the meaning of "and / or" throughout the text includes three parallel solutions; for example, "A and / or B" includes solution A, solution B, or a solution where both A and B are satisfied simultaneously. Furthermore, the technical solutions of the various embodiments can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or impossible to implement, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection claimed by this invention.

[0025] The following embodiments will provide a detailed description of the fabrication method of the quartz gas conduit for advanced chip manufacturing processes of this application.

[0026] Example 1: like Figures 1-4 As shown, this embodiment proposes a method for fabricating a quartz gas guide tube for advanced chip manufacturing processes. The quartz gas guide tube includes: a tube body 10 and a flange 20. A side hole 11 is formed on the side of the tube body 10, and an end hole 12 is formed at the sealing end of the tube body 10. The specific steps include: Flange processing steps: raw material requisition, external cylindrical grinding, overall length cutting, internal diameter machining, high-temperature boiling cleaning, process inspection, process cleaning, fire polishing, annealing, and secondary process cleaning.

[0027] The requisition of raw materials should be determined based on the quantity, size, and cutting tool thickness of the flanges to be processed, with sufficient machining allowance reserved; external cylindrical grinding and internal diameter machining must ensure surface roughness to facilitate subsequent fire polishing; high-temperature boiling cleaning and multiple cleaning processes gradually remove surface oil, impurities, and oxide layers; fire polishing removes the broken layers generated during machining and improves surface transparency; annealing eliminates internal stress from machining to prevent flange breakage; secondary cleaning processes ensure the cleanliness of the flanges before assembly.

[0028] Specifically, a. Issuance of round bar blanks: The flange diameter is B, and the blank diameter is B + (1mm - 3mm); the flange length is L1, and the blank length L2 = n(L1 + H) + 3 + 3; the cutting tool thickness is H; the number of flanges is n; 3mm is left on each of the left and right ends of the blank for end face cutting; the blank length L2 needs to be within the processing capacity of the external cylindrical grinding machine; multiple products can be processed from one blank, which increases efficiency.

[0029] b. External cylindrical grinding: Using a tool with a grit size of 200#-600#, grind the outer diameter of the blank to the outer diameter size B of the flange, control the straightness within 0.05, and control the surface roughness Ra of the outer diameter within 0.8μm, so as to facilitate the flame polishing of the flange (the finer the machining surface, the higher the appearance quality after flame polishing).

[0030] c. Total length: Using a cutting tool with a grit size of 200#-600#, the flange length L1 is machined, with the flatness and parallelism of the cut end face controlled within 0.05. A schematic diagram of the flange length cutting process is shown below. Figure 3 As shown.

[0031] d. Internal diameter machining: First, use a 100#-200# solid metal tool to drill and roughen the hole. Then, use a 230#-400# metal tool for finishing. The surface roughness Ra of the inner diameter after finishing is controlled within 0.8μm to facilitate the flame polishing of the flange (the finer the machining surface, the higher the appearance quality after flame polishing).

[0032] e. Boil and wash at high temperature: First, wipe all surfaces of the flange with a sponge soaked in degreasing solution. Then, rinse thoroughly with tap water. Next, place the flange in boiling water (above 95°C) for 10 minutes to clean it. After 10 minutes, remove the flange, wipe all surfaces again with a sponge soaked in degreasing solution, and rinse thoroughly with tap water. Finally, use an air gun to dry the product.

[0033] f. Engineering Inspection: Inspect the dimensions and appearance of the flange.

[0034] g. Engineering cleaning: (1) Degreasing and cleaning: Wipe the flange surface with degreasing solution, and then rinse with pure water (referred to as pure water) with a resistivity of 10Ω·cm or higher for 1 minute.

[0035] (2) Nitric acid cleaning: Immerse the flange in a nitric acid solution with a liquid temperature of 30°C and a concentration of 8% to 10% for 15 minutes, and then rinse the flange in a pure water tank for 30 seconds.

[0036] (3) Hydrofluoric acid cleaning: Immerse the flange in a hydrofluoric acid solution with a liquid temperature of 30°C and a concentration of 4% to 8% for 60 minutes, and then rinse the flange in a pure water tank for 30 seconds.

[0037] (4) Clean with pure water: Soak the flange in a pure water tank for 30 minutes, and rinse with pure water for 2 minutes after soaking.

[0038] h. Fire polishing: After a flange surface is ground by machining tools, a loose, fractured layer forms on its surface, with a depth of approximately 0.005mm-0.02mm. It is this fractured layer that gives the product surface a whitish, matte finish. Fire polishing refers to using an oxyhydrogen flame to polish the product's outer surface at high temperatures. This high-temperature fire polishing process melts and removes the fractured layer formed after machining, resulting in a transparent product.

[0039] i. Annealing: During flame polishing, uneven temperature distribution can cause internal stress in flanges. Annealing is necessary immediately after flame polishing to relieve this stress, and the stress should be controlled below 7°C / cm after annealing.

[0040] Annealing procedure: Place the flange on the annealing plate, then push it into an annealing furnace at a temperature of 1000℃~1200℃ and maintain the temperature for 45 minutes. After 45 minutes, remove the flange and allow it to cool to room temperature in the air.

[0041] j. Engineering cleaning: (1) Degreasing and cleaning: Wipe the flange surface with degreasing solution, and then rinse with pure water (referred to as pure water) with a resistivity of 10Ω·cm or higher for 1 minute.

[0042] (2) Nitric acid cleaning: Immerse the flange in a nitric acid solution with a liquid temperature of 30°C and a concentration of 8% to 10% for 15 minutes, and then rinse the flange in a pure water tank for 30 seconds.

[0043] (3) Hydrofluoric acid cleaning: Immerse the flange in a hydrofluoric acid solution with a liquid temperature of 30°C and a concentration of 4% to 8% for 60 minutes, and then rinse the flange in a pure water tank for 30 seconds.

[0044] (4) Clean with pure water: Soak the flange in a pure water tank for 30 minutes, and rinse with pure water for 2 minutes after soaking.

[0045] This embodiment ensures flange dimensional accuracy and surface quality through refined flange processing procedures, avoiding subsequent problems such as loose connections or gas leaks caused by flange defects.

[0046] Example 2 This embodiment is a further improvement based on Embodiment 1.

[0047] like Figures 5-7 As shown, this embodiment also includes a finished product processing step. Specifically, it includes: The flange and the pipe body are clamped on a rotating device. The device drives the two to rotate synchronously. The joint is fused together by an oxyhydrogen flame. At the same time as the joint, high-pressure gas is introduced into the pipe body. During the joint process, the pipe body moves and is squeezed towards the flange.

[0048] Specifically, the flange and pipe body are clamped onto the left and right three-jaw chucks of the rotating device. Gas is introduced into the pipe body, and the device drives the flange and pipe body to rotate synchronously. The left moving mechanism moves from left to right, while the right fixing mechanism remains stationary. The position of the oxyhydrogen flame processing mechanism is adjusted to align with the mating area of ​​the flange and pipe body. Under the action of the high-temperature oxyhydrogen flame, the flange and pipe body are fused together. The welded area must be full and free of air bubbles and gas lines to avoid affecting the mechanical strength of the product.

[0049] To ensure a full fit between the flange and the pipe body, the pipe body will shift to the right and compress during the connection process. If the pipe body is not ventilated, bulges will appear on both the inner and outer walls of the pipe body at the flange connection point. Figure 6 As shown. Since the protruding features at the flange and pipe body mating area can affect the use of the product, they need to be removed. However, due to the narrow inner diameter space of the pipe body and the deep location of the protrusion features, grinding or machining methods are difficult to completely remove them.

[0050] To address the challenge of removing internal protrusions at the joint, gas is introduced into the tube body during the jointing process. Under the pressure of this high-pressure gas, the internal joint area transitions smoothly without any protrusions. Figure 7 As shown.

[0051] After docking, external protrusions are removed by grinding, and the inner diameter is smoothly transitioned.

[0052] In this embodiment, by introducing high-pressure gas, protrusions inside the joint can be avoided, solving the problem of difficult removal of internal protrusions in traditional processes; the moving and squeezing of the tube body ensures that the welded joint is full, free of bubbles and gas lines, improving the mechanical strength of the product and ensuring smooth gas delivery channels.

[0053] Example 3: This embodiment is a further improvement based on Embodiment 2.

[0054] like Figures 8-10 As shown, in this embodiment, the finished product processing step further includes: Side hole drilling process: The side of the tube body is drilled using a laser. First, a semi-circular graphite rod is inserted into the tube body, and gas is introduced into the tube body. Laser drilling is performed using a horizontal spiral processing path from the inside to the outside, and the drilling is carried out sequentially from one end of the tube body to the other.

[0055] The primary function of side vias is to deliver process gases to the wafer. The appearance and dimensional tolerances of the side vias are crucial, affecting wafer yield (e.g., the uniformity and thickness of the wafer film). The specific steps for laser-drilling side vias are as follows: A semi-circular graphite rod is inserted under the internal side hole of the product, and the product is fixed on the working platform; The function of the semi-circular graphite rod is to prevent the laser from directly penetrating the entire product, forming a small hole in the lower half of the product, thereby ensuring the accuracy of the side hole forming.

[0056] b. Introduce gas into the product from the left end; Gas can remove molten quartz residue and volatiles formed during laser drilling, preventing the accumulation of large amounts of molten quartz residue and volatiles at the bottom of the hole. A continuous and stable gas introduction method is adopted, and the gas flow rate is adapted and adjusted according to the tube body size to ensure that the residue and volatiles are fully removed without affecting the side hole forming accuracy.

[0057] c. Use a horizontal spiral machining path from the inside out to machine the small holes, drilling sequentially from right to left; like Figure 10 As shown, the disadvantage of the traditional circular machining path is that the laser cutting point is on the edge of the hole, which will have an instantaneous impact force and the cutting point will have obvious indentation problems, which will affect the roundness and dimensional accuracy of the small hole.

[0058] In this embodiment, the entry point of the horizontal spiral processing path from the inside out is located at the center of the product. The laser slowly cuts from the inside out to form a circle, resulting in good roundness and high dimensional accuracy of the small holes. This effectively solves the problem of recessed entry points in traditional circular paths, improves the roundness and dimensional accuracy of side holes, ensures uniform gas delivery, and improves the problem of uneven wafer film formation.

[0059] Example 4: This embodiment is a further improvement based on Embodiment 3.

[0060] like Figure 11 , Figure 12 As shown, in this embodiment, the finished product processing step further includes: Sealing Process: The assembled products are clamped and fixed, gas is introduced into the tube body, the sealing position is heated by an oxyhydrogen flame, and the seal is separated by an outward stretching mechanism. Then, a high-purity graphite sealing mold is used to conform the seal to the tube. The specific sealing steps are as follows: a. Clamp the assembled flange pipe body components onto the left and right three-jaw chucks, circulate gas inside the pipe body, adjust the position of the high-temperature hydrogen-oxygen flame mechanism, and heat the sealing position with the flame.

[0061] b. The sealed area softens slowly under the action of the hydrogen-oxygen flame, while the left moving mechanism slowly moves to the left to stretch the product.

[0062] c. The sealing position is gradually pulled apart by the left moving mechanism and the hydrogen-oxygen flame operation.

[0063] d. After the sealing position is completely separated, use a high-purity graphite sealing mold to fit the sealing position so that the sealing shape fits the mold perfectly.

[0064] e. Turn off the hydrogen-oxygen flame, remove the product, and the sealing operation is complete.

[0065] In this implementation, the internal gas flow, combined with the molding process, ensures that the sealing area has a regular shape and a smooth surface, preventing sealing defects from affecting the gas delivery seal. The high-purity graphite mold provides uniform heat conduction, improving the sealing quality and enhancing the overall structural stability of the product.

[0066] Example 5: This embodiment is a further improvement based on Embodiment 4.

[0067] like Figures 13-16 As shown, in this embodiment, the finished product processing step further includes: End face hole punching process: Solid wax is added to the product and melted, allowing the liquid wax to fill the inside of the sealed end of the product. After the liquid wax cools to solidify, a tool is used to punch holes in the sealed end of the product to form end face holes. After punching, the wax is melted and drained by heating to remove the wax medium. The specific steps for end face punching are as follows: a. Place the solid wax into the tube body.

[0068] b. Use a torch to heat and melt the solid wax inside the tube into a liquid state.

[0069] C. The liquid wax inside the tube body cools to a solid state.

[0070] d. Use a 200#-400# tool to drill holes on the end face of the product.

[0071] Quartz is a hard and brittle material, and the end face is a through hole. If there is no material support at the bottom of the hole, directly drilling with a tool will cause chipping at the bottom of the hole. Figure 16 As shown.

[0072] Therefore, in this embodiment, the tube body is filled with wax. After the wax medium cools and solidifies, it forms effective support for the bottom of the hole, solving the problem of hole bottom chipping caused by the hard and brittle nature of quartz material and ensuring the machining quality of the end holes. In addition, the wax medium can be easily removed by heating, leaving no impurities and not affecting the performance of the product.

[0073] Example 6: This embodiment is a further improvement based on Embodiment 5.

[0074] In this embodiment, the finished product processing step further includes: Cleaning process: The process involves sequential high-temperature boiling and multiple stages of specialized cleaning. The specialized cleaning includes degreasing, nitric acid cleaning, hydrofluoric acid cleaning, and pure water rinsing. High-temperature boiling removes surface oil and residual wax, while the specialized cleaning, through multiple chemical cleaning steps and pure water rinsing, gradually removes metallic elements, organic matter, and particulate contaminants. The cleaning steps are as follows: Wash thoroughly by boiling at high temperature: First, use a sponge soaked in degreasing solution to wipe all surfaces of the product. Then, rinse thoroughly with tap water. Next, place the product in boiling water (above 95°C) for 10 minutes to clean it. After 10 minutes, remove the product, wipe all surfaces again with a sponge soaked in degreasing solution, and rinse thoroughly with tap water. Finally, use an air gun to dry the product.

[0075] Engineering cleaning: (1) Degreasing and cleaning: Wipe the surface of the product with degreasing solution, and then rinse with pure water with a resistivity of 10Ω·cm or higher (referred to as pure water) for 1 minute.

[0076] (2) Nitric acid cleaning: Immerse the product in a nitric acid solution bath with a liquid temperature of 30℃ and a concentration of 8% to 10% for 15 minutes, and then rinse the product in a pure water bath for 30 seconds.

[0077] (3) Hydrofluoric acid cleaning: Immerse the product in a hydrofluoric acid solution bath with a liquid temperature of 30℃ and a concentration of 4% to 8% for 60 minutes, and then rinse the product in a pure water bath for 30 seconds.

[0078] (4) Wash with pure water: Soak the product in a pure water tank for 30 minutes, and rinse with pure water for 2 minutes after soaking.

[0079] Fire polishing process: The entire surface of the product is polished using a hydrogen-oxygen flame at high temperature.

[0080] After machining, laser processing, and grinding, the product surface will develop a fractured layer. This fractured layer gives the product a whitish, matte appearance. The fractured layer is essentially particulate matter and can trigger an alarm indicating excessive particulate matter during the wafer fabrication process, requiring its removal. A high-temperature flame polishing process using an oxyhydrogen flame can be employed to polish the entire product surface. This high-temperature polishing process melts and removes the fractured layer formed during machining, leaving the product completely transparent.

[0081] Annealing process: After the product is placed in an annealing furnace for constant temperature treatment, it is cooled to room temperature in the air.

[0082] During the docking, sealing, and flame polishing processes, uneven temperature distribution can generate internal stress in the product. The final product's internal stress must be controlled below 7°C / cm to prevent abnormal breakage during use and to avoid affecting the product's lifespan.

[0083] Annealing process: Place the product on an annealing plate and then push it into an annealing furnace at a temperature of 1000℃~1200℃ for 45 minutes. After 45 minutes, remove the product and allow it to cool to room temperature in the air.

[0084] Final inspection and cleaning steps: Inspect the product size and appearance, and perform final cleaning after it passes the inspection.

[0085] The final inspection ensures that the product dimensions meet design requirements and that there are no defects in appearance. The final cleaning is necessary because the product has undergone various processes, and contamination from metal elements, organic matter, and particulate matter can occur between these processes. This final cleaning further ensures product cleanliness, guarantees stable and reliable product quality, and meets the requirements of advanced chip manufacturing processes.

[0086] The final washing steps are as follows: (1) Degreasing and cleaning: Wipe the surface of the product with degreasing solution, and then rinse with pure water with a resistivity of 10Ω·cm or higher (referred to as pure water) for 1 minute.

[0087] (2) Nitric acid cleaning: Immerse the product in a nitric acid solution bath with a liquid temperature of 30℃ and a concentration of 8% to 10% for 15 minutes, and then rinse the product in a pure water bath for 30 seconds.

[0088] (3) Hydrofluoric acid cleaning: Immerse the product in a hydrofluoric acid solution bath with a liquid temperature of 30℃ and a concentration of 4% to 8% for 60 minutes, and then rinse the product in a pure water bath for 30 seconds.

[0089] (4) Wash with pure water: Soak the product in a pure water tank for 30 minutes, and rinse with pure water for 2 minutes after soaking.

[0090] In this embodiment, the cleaning process further improves the cleaning effect and avoids the impact of chemical reagent residues on product performance.

[0091] In this embodiment, throughout the entire operation, the gas guide tube undergoes multiple cleaning and fire polishing processes, resulting in a surface free of broken layers and particulate residue. This prevents impurities from falling off during gas delivery, thus avoiding triggering particulate matter exceeding alarms in the wafer process. The high machining precision of the side holes and end holes ensures stable gas flow and uniform delivery, effectively improving wafer film uniformity and enhancing chip processing quality. After annealing, the product exhibits low internal stress, making it less prone to breakage under long-term high-temperature and high-pressure operating conditions. This significantly extends its service life, reduces the frequency of gas guide tube replacement, lowers production costs and equipment downtime, ensures the continuity and stability of the chip production process, and meets the high-performance requirements of advanced chip manufacturing processes for gas delivery components.

[0092] The various embodiments of this disclosure have been described above. These descriptions are exemplary and not exhaustive, nor are they limited to the disclosed embodiments. Many modifications and variations will be apparent to those skilled in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen to best explain the principles, practical application, or improvement of the technology in the market, or to enable others skilled in the art to understand the embodiments disclosed herein.

Claims

1. A method for fabricating a quartz gas conduit for advanced chip manufacturing processes, wherein the quartz gas conduit comprises: The pipe body and flange, characterized in that the manufacturing method includes: Butt welding process: The flange and the pipe body are clamped on a rotating device, which drives the two to rotate synchronously, and the butt welding parts are fused together by an oxyhydrogen flame; Side hole drilling process: using a laser to drill side holes on the side of the tube body; Sealing process: Sealing the end face of the pipe body; And the end-hole punching process: using a cutting tool to punch holes in the sealing end of the pipe body to form end holes; During the docking process, high-pressure gas is introduced into the tube body at the same time as docking.

2. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 1, characterized in that, In the side hole drilling process, a semi-circular graphite rod is inserted into the tube body. The semi-circular graphite rod blocks the laser from penetrating the tube body, so that only the required side holes are formed on the tube body.

3. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 2, characterized in that, During the side-hole drilling process, gas is introduced into the tube body to remove molten quartz residue and volatiles generated during laser drilling.

4. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 3, characterized in that, In the side hole drilling process, a horizontal spiral machining path from the inside to the outside is used for laser drilling.

5. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 1, characterized in that, The sealing process steps are as follows: The assembled products are clamped and fixed, gas is introduced into the tube body, the sealing position is heated by hydrogen-oxygen flame, and the seal is separated by stretching outward with the help of the moving mechanism. Then, the product is fitted together using a contour mold, which is a high-purity graphite sealing contour mold.

6. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 1, characterized in that, The steps of the end-face punching process are as follows: A filling medium is added to the product to support the inside of the sealed end. Then, a tool is used to punch holes in the sealed end of the product to form end holes.

7. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 6, characterized in that, The filling medium is wax; solid wax is added to the product and melted to fill the inside of the sealing end of the product with liquid wax. After the liquid wax cools to solid, holes are drilled; the wax medium is removed after the holes are drilled.

8. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 1, characterized in that, The preparation method further includes: cleaning, fire polishing, annealing and final inspection and cleaning steps; The cleaning process involves sequentially subjecting the processed products to high-temperature boiling and multiple engineering cleaning processes, including degreasing, nitric acid, hydrofluoric acid, and pure water cleaning. Fire polishing: The entire surface of the product is polished using an oxyhydrogen flame at high temperature; Annealing: After the product is placed in an annealing furnace and kept at a constant temperature, it is cooled to room temperature in the air; Final inspection and cleaning: Inspect the product dimensions and appearance, and perform final cleaning after it passes the inspection.

9. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 8, characterized in that, The preparation method further includes: flange processing step; The flange processing steps include, in sequence: raw material requisition, external cylindrical grinding, cutting the total length, internal diameter machining, high-temperature boiling cleaning, engineering inspection, engineering cleaning, fire polishing, annealing, and secondary engineering cleaning.

10. The method for preparing a quartz gas conduit for advanced chip manufacturing processes as described in claim 9, characterized in that, The flange processing steps are as follows: a. Requisition of round bar blanks: The flange diameter is B, and the blank diameter is B + (1mm - 3mm); the flange length is L1, and the blank length is L2 = n(L1 + H) + 3 + 3, where H is the thickness of the cutting tool and n is the number of flanges to be cut. b. External cylindrical grinding: Using a cutting tool with a grit size of 200#-600#, grind the outer diameter of the blank to the outer diameter dimension B of the flange, with the straightness controlled within 0.05 and the surface roughness Ra of the outer diameter controlled within 0.8μm; c. Total length: Using a cutting tool with a grit size of 200#-600#, the flange length L1 is machined, and the flatness and parallelism of the end face cut surface are controlled within 0.

05. d. Internal diameter machining: First, use a 100#-200# solid metal tool to peck and drill holes for roughing, and then use a 230#-400# metal tool for finishing. The surface roughness Ra of the inner diameter after finishing is controlled within 0.8μm. e. Boil and wash at high temperature: Boil and wash in boiling water; f. Engineering Inspection: Inspect the dimensions and appearance of the flange; g. Engineering cleaning: (1) Wipe the flange surface with degreasing solution and rinse with pure water with a resistivity ≥10Ω・cm; (2) Remove the oxide layer by soaking in an 8%-10% nitric acid solution, and then rinse in a pure water tank; (3) Soak in 4%-8% hydrofluoric acid solution to remove impurities, then rinse in pure water. (4) Soak in a pure water bath to remove residual reagents, then rinse with pure water; h. Fire polishing: After the flange is machined, a loose and broken layer of 0.005-0.02mm will be formed on the surface. The outer surface is treated with a hydrogen-oxygen flame at high temperature to melt and remove the broken layer, making the flange transparent. i. Annealing: After the flange is polished, it is placed in an annealing furnace at 1000-1200℃ and kept at a constant temperature for a certain period of time. After being taken out, it is cooled to room temperature in the air. j. Engineering cleaning: (1) Wipe the flange with degreasing solution and rinse with pure water with a resistivity ≥10Ω・cm; (2) Soak in 8%-10% nitric acid solution, then rinse in pure water. (3) Soak in 4%-8% hydrofluoric acid solution, then rinse in pure water. (4) Soak in a pure water tank, then rinse with pure water.

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