Piezoelectric ceramic material, method for preparing same and use thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG ZHIDA MICRO TECHNOLOGY CO LTD
- Filing Date
- 2026-04-30
- Publication Date
- 2026-06-19
AI Technical Summary
The existing high-temperature sintering process for PZT ceramic materials results in high costs and environmental pollution, while the low-temperature sintering aids lead to a decrease in dielectric loss and mechanical quality factor, which cannot meet the requirements of high-frequency and high-power applications.
Low-valence K or Na-doped Pb is used as the acceptor dopant, combined with Mn, Li2CO3, Bi3BO6 and Mn2P2O7 additives to reduce the sintering temperature and maintain excellent piezoelectric properties. Densification is promoted through lattice distortion and liquid phase sintering, thereby improving the mechanical quality factor and dielectric properties.
It achieves ceramic sintering at temperatures below 900℃, with dielectric loss below 1% and a mechanical quality factor above 1000, making it suitable for high-frequency, high-power piezoelectric devices, reducing production costs and improving material stability and performance.
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Figure CN122233780A_ABST