A normally closed thermal trip switch
By using a normally closed thermal trip switch with a limiting element made of low melting point material to disconnect the circuit during fault current, the problem of delayed or complex response of existing protection methods is solved, realizing fast and effective protection of power semiconductor devices, improving device lifespan and reducing costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- XIAN SINOKE NEW ENERGY TECH CO LTD
- Filing Date
- 2024-12-18
- Publication Date
- 2026-06-19
AI Technical Summary
Existing power device protection methods are either slow to respond or complex in design after a fault current occurs, making it impossible to protect power semiconductor devices quickly and effectively. In particular, the fuse and the main circuit current detection method have response lag, while the parallel detection working voltage drop method is costly and has poor versatility.
The normally closed thermal trip switch is adopted. The limiting component made of low melting point material melts or softens during fault current, disconnecting the circuit of the power semiconductor device. The thermal energy generated by the fault current triggers the thermal trip switch to operate, achieving rapid protection.
It enables rapid circuit disconnection during fault current, protecting power semiconductor devices, extending their lifespan, and features a simple structure and low cost.
Smart Images

Figure CN122246001A_ABST