A photoelectric active material with a p-n covalent bond bridged heterojunction and a preparation method and application thereof

By bridging heterostructured photoelectric active materials with PN covalent bonds, the problems of low photo-to-electric conversion efficiency and carrier separation efficiency in traditional photoelectrochemical sensors are solved, realizing efficient and stable chloramphenicol detection, which is suitable for food safety and environmental monitoring.

CN122248829APending Publication Date: 2026-06-19XINJIANG NORMAL UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XINJIANG NORMAL UNIVERSITY
Filing Date
2026-03-26
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Existing photoelectrochemical sensors have low photo-to-electric conversion efficiency and carrier separation and transport efficiency. In traditional heterojunction systems, the interface is unstable and the electron transport efficiency is not high, which limits their application in the rapid and accurate detection of chloramphenicol antibiotics.

Method used

Photoelectric active materials employing PN covalent bond bridging heterostructures are constructed by preparing g-C3N4 monolayer nanosheets and red phosphorus nanosheets to form a stable PN covalent bond bridging heterostructure, thereby building an efficient electron transport channel and inducing spatial separation of photogenerated carriers, enhancing photocurrent response intensity and material stability.

Benefits of technology

It significantly improves the photocurrent response intensity and stability of the photoelectrochemical sensor, enabling rapid and accurate chloramphenicol detection. It is suitable for antibiotic monitoring in complex environments and has high sensitivity and specificity.

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Abstract

This invention belongs to the field of antibiotic detection technology. It relates to a photoelectric active material with a P-N covalent bond-bridged heterojunction, its preparation method, and its applications. The RP / g-C3N4 P-N type chemically bonded heterojunction photochemical sensing material prepared by this method benefits from the unique band structure electric field response properties of g-C3N4. Under adjusted bias voltage conditions, this heterojunction material excites a dual-channel photocurrent response at both the anode and cathode, forming a self-detecting signal mechanism. The construction of P-N interface chemical bonds not only provides an efficient directional transport channel for photogenerated electrons but also enhances the structural stability of the system through stress buffering. In summary, the synergistic design of the engineering strategy based on P-N interface bonding bridging and the single-system bipolar signal detection mechanism overcomes the detection limitations of traditional single-channel PEC sensors, significantly improving signal reliability and anti-interference capabilities, and endowing the sensor with wider application adaptability and higher detection confidence.
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