Light emitting element transfer apparatus and method of driving light emitting element transfer apparatus

Abstract

This disclosure provides a light-emitting element transfer device and a method for driving the light-emitting element transfer device. The light-emitting element transfer device includes: a plurality of injection sections into which a plurality of light-emitting elements are injected respectively; a plurality of stacking sections corresponding to the plurality of injection sections and allowing the plurality of light-emitting elements injected into the plurality of injection sections to be stacked; and a plurality of output sections corresponding to the plurality of stacking sections and sequentially outputting the plurality of light-emitting elements stacked in the plurality of stacking sections. The light-emitting element transfer device is capable of effectively transferring light-emitting elements.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0189749, filed on December 18, 2024, with the Korean Intellectual Property Office, which is incorporated herein by reference for all purposes as if fully set forth herein. Technical Field

[0003] This disclosure relates to a light-emitting element transfer device and a method for driving the light-emitting element transfer device. Background Technology

[0004] In today's information society, display devices used to present images or visual information to users are becoming increasingly important. The diverse demands for display devices have driven the rapid development of display technology, and various types of display devices have been developed and are now widely used, such as liquid crystal displays (LCDs), organic light-emitting diode (OLEDs), inorganic light-emitting diode (iLED) devices, micro-light-emitting diode (microLED) devices, miniature light-emitting diode (miniature LED) devices, and quantum dot light-emitting diode (QLED) devices.

[0005] The display device may include multiple light-emitting elements. These multiple light-emitting elements can be transferred onto a substrate. The multiple light-emitting elements can be transferred onto the substrate using various techniques. Summary of the Invention

[0006] One or more aspects of this disclosure may provide a light-emitting element transfer device and a method for driving the light-emitting element transfer device, the light-emitting element transfer device including an injection section, a stacking section and an output section, and capable of aligning light-emitting elements.

[0007] One or more aspects of this disclosure may provide a light-emitting element transfer device and a method for driving the light-emitting element transfer device, the light-emitting element transfer device including an injection section, a stacking section and an output section, and capable of stacking light-emitting elements.

[0008] One or more aspects of this disclosure may provide a light-emitting element transfer device and a method for driving the light-emitting element transfer device, the light-emitting element transfer device including an injection section, a stacking section and an output section, and capable of transferring light-emitting elements.

[0009] One or more aspects of this disclosure may provide a light-emitting element transfer apparatus and a method for driving the light-emitting element transfer apparatus, the light-emitting element transfer apparatus including an injection section, a stacking section and an output section, and capable of optimizing the process.

[0010] The aspects, examples, and implementations provided in this disclosure are not limited to the foregoing description, and the additional aspects, examples, and implementations provided in this disclosure will become apparent to those skilled in the art from the following description.

[0011] According to one or more exemplary embodiments of the present disclosure, a light-emitting element transfer device may be provided, the light-emitting element transfer device comprising: a plurality of injection sections into which a plurality of light-emitting elements are respectively injected; a plurality of stacking sections corresponding to the plurality of injection sections and allowing the plurality of light-emitting elements respectively injected into the plurality of injection sections to be stacked; and a plurality of output sections corresponding to the plurality of stacking sections and sequentially outputting the plurality of light-emitting elements stacked in the plurality of stacking sections.

[0012] According to one or more exemplary embodiments of the present disclosure, a method for driving a light-emitting element transfer device can be provided, the method comprising: a light-emitting element injection step, wherein a first electric field is formed through an element injection portion to hold a first light-emitting element among a plurality of light-emitting elements in the element injection portion; a light-emitting element stacking step, wherein a second electric field is formed through a stacking portion located below the element injection portion and the first electric field is removed through the element injection portion, such that the first light-emitting element moves to the stacking portion and is held in the stacking portion; a first transfer preparation step, wherein a third electric field is formed through an output portion located below the stacking portion and the second electric field is removed through the stacking portion, such that the first light-emitting element moves to the output portion and is held in the output portion; and a transfer step, wherein the third electric field is removed through the output portion to transfer the first light-emitting element onto a substrate.

[0013] According to one or more aspects of this disclosure, a light-emitting element transfer device including an injection section, a stacking section, and an output section, and a method for driving the light-emitting element transfer device are provided, which enables the light-emitting element to be aligned.

[0014] According to one or more aspects of this disclosure, a light-emitting element transfer device including an injection section, a stacking section and an output section, and a method for driving the light-emitting element transfer device can be provided, which is capable of stacking light-emitting elements.

[0015] According to one or more aspects of this disclosure, a light-emitting element transfer device including an injection section, a stacking section, and an output section, and a method for driving the light-emitting element transfer device, which is capable of transferring light-emitting elements, can be provided.

[0016] According to one or more aspects of this disclosure, a light-emitting element transfer apparatus including an injection section, a stacking section, and an output section, and a method for driving the light-emitting element transfer apparatus can be provided, which can optimize the process.

[0017] The effects or advantages derived from the aspects, examples and implementations described herein are not limited thereto, and additional effects or advantages will become apparent to those skilled in the art from the following description. Attached Figure Description

[0018] The accompanying drawings are included to provide a further understanding of this disclosure and are incorporated into and constitute a part of this disclosure. The drawings illustrate various aspects of this disclosure and, together with the description, serve to explain the principles of this disclosure. Therefore, it should be understood that the aspects, examples, and embodiments described herein are not limited to the illustrations in the drawings. In the drawings:

[0019] Figure 1 An example system configuration of a display device according to various aspects of this disclosure is shown.

[0020] Figure 2 Example pixels are shown based on various aspects of this disclosure.

[0021] Figure 3 , Figure 4 and Figure 5 An example light-emitting element transfer device configured to transfer light-emitting elements according to various aspects of this disclosure is shown.

[0022] Figures 6 to 13 It is along Figure 5 Example cross-section diagram taken from line AB in the diagram.

[0023] Figure 14 and Figure 15 An example of transferring a light-emitting element to a substrate in a light-emitting element transfer apparatus according to various aspects of this disclosure is shown.

[0024] Figure 16 This is a flowchart of a method for driving a light-emitting element transfer device according to various aspects of this disclosure. Detailed Implementation

[0025] In the following description of examples or embodiments of the invention, reference will be made to the accompanying drawings, in which specific examples or embodiments that can be implemented are illustrated by way of illustration, and the same reference numerals and symbols may be used to denote the same or similar parts, even when these parts are shown in different drawings. Furthermore, in the following description of examples or embodiments of the invention, detailed descriptions of well-known functions and parts incorporated herein will be omitted where such descriptions would obscure the subject matter of some embodiments of the invention. Where terms such as “comprising,” “having,” “including,” “containing,” “constituting,” “forming,” “composed of,” “formed from,” etc., are used, one or more additional elements may be added unless terms such as “only” are used. Elements described in the singular are intended to include multiple elements, and vice versa, unless the context clearly indicates otherwise.

[0026] Although the terms “first,” “second,” A, B, (a), (b), etc., may be used herein to describe various elements, these elements should not be construed as being limited by these terms, as they are not used to define a particular order or priority. These terms are used only to distinguish one element from another. For example, without departing from the scope of this disclosure, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0027] When referring to a first element being "connected or coupled to" a second element, or "in contact with or overlapping" a second element, it should be interpreted that not only can the first element be "directly connected or coupled to" the second element or "directly in contact with or overlapping" a second element, but a third element can also be "placed" between the first and second elements, or the first and second elements can be "connected or coupled," "in contact with," or "overlapped" with each other via a fourth element. Here, the second element can be included in at least one of two or more elements that are "connected or coupled" to each other, or that are "in contact with" or "overlapped" with each other.

[0028] When describing positional relationships, such as when using terms like "above," "over," "below," "on top," "below," "beside," or "near" to describe the positional relationship between two parts, one or more other parts may be located between these two parts, unless more restrictive terms such as "closely," "directly," or "tightly" are used. For example, if an element or layer is placed "on" another element or layer, a third element or layer may be placed between it. Furthermore, the terms "left," "right," "top," "bottom," "downward," "upward," "above," "below," etc., refer to any frame of reference.

[0029] Furthermore, when referring to any size, relative dimensions, etc., the numerical or corresponding information of the component or feature (e.g., level, range, etc.) should be considered, including tolerances or error ranges that may be caused by various factors (e.g., process factors, internal or external influences, noise, etc.), even if no relevant description is specified. In addition, the term "may" fully encompasses all the meanings of the term "able to".

[0030] In the following, various exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Furthermore, for ease of description, the scale of each element shown in the drawings may differ from the actual scale. Therefore, the elements shown are not limited to the specific scales they are shown in the drawings.

[0031] Figure 1 An example system configuration of a display device 100 according to various aspects of this disclosure is shown.

[0032] Reference Figure 1 In one or more example embodiments, the display device 100 may include a display panel 110 and at least one display driving circuit as elements for displaying images. The at least one display driving circuit may be one or more circuits for driving the display panel 110, and includes a data driving circuit 120, a gate driving circuit 130, a display controller 140, and other circuit components.

[0033] The display panel 110 may include a substrate 111 and a plurality of sub-pixels SP disposed on the substrate 111.

[0034] The substrate 111 of the display panel 110 may include a display area DA that allows images to be displayed and a non-display area NDA located outside the display area DA.

[0035] Multiple sub-pixels SP for displaying an image can be set in the display area DA, and the non-display area NDA can include a pad area arranged from the display area DA along a first direction.

[0036] In one or more aspects, the non-display area NDA of the display panel 110 may have a very small area compared to the display area DA. In this document, the non-display area NDA may also be referred to as the non-active area, border, or border region.

[0037] Several types of signal lines for driving multiple sub-pixels SP can be provided on the substrate 111 of the display panel 110.

[0038] In one or more aspects, the display device 100 may be a liquid crystal display device or a self-emissive display device that emits light from the display panel 110 itself. In the example where the display device 100 is a self-emissive display device, each of the plurality of sub-pixels SP may include a light-emitting element.

[0039] For example, display device 100 may be an organic light-emitting display device that uses an organic light-emitting diode (OLED) as the light-emitting element. In another example, display device 100 may be an inorganic light-emitting display device that uses a light-emitting diode based on an inorganic material as the light-emitting element. In yet another example, display device 100 may be a quantum dot display device that uses a quantum dot, which is a self-emissive semiconductor crystal, as the light-emitting element.

[0040] The structure of each of the plurality of subpixels SP can depend on the type of display device 100. For example, in an example where the display device 100 is a self-emissive display device that includes self-emissive subpixels SP, each subpixel SP may include a self-emissive light-emitting element, one or more transistors, and one or more capacitors.

[0041] Several types of signal lines may include, for example, multiple data lines DL for transmitting data signals (which may be referred to as data voltages or image signals), multiple gate lines GL for transmitting gate signals (which may be referred to as scan signals), etc.

[0042] The data driving circuit 120 can be a circuit for driving multiple data lines DL, and can output data signals to multiple data lines DL.

[0043] The data drive circuit 120 can receive digital image data DATA from the display controller 140, convert the received image data DATA into an analog data signal, and output the converted data signal to multiple data lines DL.

[0044] The data driving circuit 120 may be located on only one side or one edge (e.g., the upper or lower part) of the display panel 110, and / or electrically connected to only one side or one edge (e.g., the upper or lower part) of the display panel 110, but is not limited thereto. In one or more aspects, depending on the driving scheme, panel design, etc., the data driving circuit 120 may be disposed on both sides or two edges (e.g., the upper and lower parts) of the display panel 110, or on at least two sides or two edges of the four sides or four edges (e.g., the upper, lower, left, and right parts) of the display panel 110, and / or electrically connected to both sides or two edges (e.g., the upper and lower parts) of the display panel 110, or on at least two sides or two edges of the four sides or four edges (e.g., the upper, lower, left, and right parts) of the display panel 110, but is not limited thereto.

[0045] The data driving circuit 120 can be connected to the outside or edge of the display area DA of the display panel 110, or it can be disposed in the display area DA of the display panel 110.

[0046] The gate drive circuit 130 can be a circuit for driving multiple gate lines GL and can output gate signals to multiple gate lines GL.

[0047] The gate drive circuit 130 can receive various types of gate drive control signals GCS, and can also receive a first gate voltage corresponding to the on-level voltage and a second gate voltage corresponding to the off-level voltage. Therefore, the gate drive circuit 130 can generate a gate signal and supply the generated gate signal to multiple gate lines GL.

[0048] The display controller 140 can be a device for controlling the data driving circuit 120 and the gate driving circuit 130, and can control the driving timing of multiple data lines DL and multiple gate lines GL.

[0049] The display controller 140 can supply the data drive control signal DCS to the data drive circuit 120 to control the data drive circuit 120, and can supply the gate drive control signal GCS to the gate drive circuit 130 to control the gate drive circuit 130.

[0050] The display controller 140 can receive image data input from the host system 150 and supply image data DATA, which can be read by the data drive circuit 120 based on the input image data, to the data drive circuit 120.

[0051] The display controller 140 can be implemented in a component separate from the data drive circuit 120, or incorporated into the data drive circuit 120 and thus implemented in an integrated circuit.

[0052] The display controller 140 may be a timing controller used in typical display technologies, or a controller or control device capable of performing other control functions in addition to the functions of a typical timing controller. In one or more embodiments, the display controller 140 may be a controller or control device different from the timing controller, or a circuit system or component included in the controller or control device.

[0053] The display controller 140 can be mounted on a printed circuit board, flexible printed circuit, etc., and is electrically connected to the gate drive circuit 130 and the data drive circuit 120 through the printed circuit board, flexible printed circuit, etc.

[0054] In one or more aspects, in order to provide touch sensing and image display functions, the display device 100 may include a touch sensor and a touch sensing circuit configured to sense the touch sensor and detect the presence or absence of touch or the location of touch by an object such as a finger or pen.

[0055] The touch sensing circuit may include a touch driving circuit and a touch controller. The touch driving circuit is configured to drive and sense the touch sensor and generate and output touch sensing data. The touch controller can use the touch sensing data to detect the presence or absence of a touch or the location of the touch.

[0056] A touch sensor may include multiple touch electrodes. A touch sensor may also include multiple touch lines for electrically connecting the multiple touch electrodes to touch driving circuitry.

[0057] The touch driving circuit can supply touch driving signals to at least one of a plurality of touch electrodes and generate touch sensing data by sensing at least one of the plurality of touch electrodes.

[0058] In one or more aspects, the touch driving circuit and the touch controller included in the touch sensing circuit can be implemented in separate devices or in a single device. In one or more aspects, the touch driving circuit and the data driving circuit can be implemented in separate devices or in a single device.

[0059] The display device 100 may also include a power supply circuit for supplying various types of power to the display driving circuit and / or touch sensing circuit.

[0060] In one or more embodiments, the display device 100 may further include electronic devices, such as a camera device (e.g., an image sensor), a sensor capable of detecting objects, etc. For example, the sensor may be a sensor capable of detecting objects or human bodies by receiving light such as infrared light, ultrasonic light, ultraviolet light, etc.

[0061] Figure 2 Example pixels are shown based on various aspects of this disclosure.

[0062] Reference Figure 2 In one or more example implementations, each of the plurality of sub-pixels SP may include a light-emitting element ED and a sub-pixel circuit SPC for driving the light-emitting element ED.

[0063] Reference Figure 2The subpixel circuit (SPC) may include a plurality of pixel driving transistors for driving the light-emitting element (ED) and at least one capacitor. The SPC can drive the ED by supplying a driving current to the ED in a predetermined timing sequence. The ED can emit light by being driven by the driving current.

[0064] The multiple pixel driving transistors may include a driving transistor DT for driving the light-emitting element ED and a scanning transistor ST configured to be turned on or off according to the scanning signal SC.

[0065] The driving transistor DT can supply driving current to the light-emitting element ED.

[0066] The scanning transistor ST can be configured to control the electrical state of the corresponding node in the sub-pixel circuit SPC or to control the state or operation of the driving transistor DT.

[0067] At least one capacitor may include a storage capacitor Cst configured to maintain a constant voltage during a display frame or a specific period of a display frame.

[0068] To drive one or more sub-pixels SP, at least one data signal VDATA as an image signal and at least one scan signal SC as a gate signal can be applied to one or more sub-pixels SP. Furthermore, a common pixel driving voltage, including a first common driving voltage VDD and a second common driving voltage VSS, can be applied to one or more sub-pixels SP.

[0069] In one or more embodiments, the light-emitting element ED can be an organic light-emitting diode, an inorganic material-based light-emitting diode, a quantum dot light-emitting diode, a micro light-emitting diode, a miniature light-emitting diode, etc. For example, in an example where the light-emitting element ED is an organic light-emitting diode (OLED), the intermediate layer EL of the light-emitting element ED can include organic materials.

[0070] The driving transistor DT can be a transistor configured to supply driving current to the light-emitting element ED. The driving transistor DT can be connected between the first common driving voltage line VDDL and the light-emitting element ED.

[0071] The driving transistor DT may include a first node N1 electrically connected to the light-emitting element ED, a second node N2 to which a data signal VDATA is applied, and a third node N3 to which a driving voltage VDD is applied from the driving voltage line DVL (e.g., a first common driving voltage line VDDL).

[0072] In the driving transistor DT, the second node N2 can be the gate node, the first node N1 can be the source node or the drain node, and the third node N3 can be the drain node or the source node. In the following discussion, for ease of illustration only, examples are provided where the first, second, and third nodes (N1, N2, and N3) of the driving transistor DT are the source node, the gate node, and the drain node, respectively. However, embodiments of this disclosure are not limited thereto.

[0073] Figure 2 The scanning transistor ST shown in the sub-pixel circuit SPC can be a switching transistor used to allow the data signal VDATA, which is an image signal, to be supplied to the second node N2, which is the gate node of the driving transistor DT.

[0074] The scan transistor ST can be turned on or off by a scan signal SC, which is a gate signal applied via a scan line SCL (type GL, gate line), and controls the electrical connection between the second node N2 of the drive transistor DT and the data line DL. The drain or source electrode of the scan transistor ST can be electrically connected to the data line DL. The source or drain electrode of the scan transistor ST can be electrically connected to the second node N2 of the drive transistor DT. The gate electrode of the scan transistor ST can be electrically connected to the scan line SCL.

[0075] The storage capacitor Cst can be electrically connected between the first node N1 and the second node N2 of the driving transistor DT. The storage capacitor Cst can include a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is electrically connected to or corresponds to the first node N1 of the driving transistor DT, and the second capacitor electrode is electrically connected to or corresponds to the second node N2 of the driving transistor DT.

[0076] In one or more aspects, the storage capacitor Cst that may exist between the first node N1 and the second node N2 of the driving transistor DT may be an external capacitor that is intentionally configured or designed to be located outside the driving transistor DT, rather than an internal capacitor such as a parasitic capacitor (e.g., gate-source capacitance Cgs, gate-drain capacitance Cgd, etc.).

[0077] Each of the driving transistor DT and the scanning transistor ST can be an n-type transistor or a p-type transistor.

[0078] The display panel 110 may have a top-emitting structure or a bottom-emitting structure.

[0079] In the example where the display panel 110 has a top-emitting structure, at least a portion of the sub-pixel circuit SPC may overlap with at least a portion of the light-emitting element ED in the vertical direction. In the example where the display panel 110 has a bottom-emitting structure, the sub-pixel circuit SPC may not overlap with the light-emitting element ED in the vertical direction.

[0080] like Figure 2 As shown, the subpixel circuit SPC may include two transistors (2T: DT and ST) and a capacitor (1C: Cst) (which may be referred to as a "2T1C structure"), and in one or more aspects, the subpixel circuit SPC may also include one or more transistors, or may also include one or more capacitors.

[0081] For example, a subpixel circuit SPC can have an 8T1C structure comprising 8 transistors and 1 capacitor. In another example, a subpixel circuit SPC can have a 6T2C structure comprising 6 transistors and 2 capacitors. In yet another example, a subpixel circuit SPC can have a 7T1C structure comprising 7 transistors and 1 capacitor.

[0082] The type and number of gate signals supplied to the sub-pixel SP and / or the type and number of gate lines connected to the sub-pixel SP can vary depending on the structure of the corresponding sub-pixel circuit SPC.

[0083] Furthermore, the type and number of common pixel driving voltages supplied to the sub-pixel SP can vary depending on the structure of the corresponding sub-pixel circuit SPC.

[0084] Figure 3 , Figure 4 and Figure 5 An example light-emitting element transfer device 300 configured to transfer a light-emitting element ED according to various aspects of this disclosure is shown.

[0085] In one or more example implementations, Figure 3 A light-emitting element transfer device 300 is schematically shown. The light-emitting element transfer device 300 can transfer a light-emitting element ED onto a substrate 111. In this document, transferring the light-emitting element ED can mean arranging the light-emitting element ED on the substrate 111.

[0086] Reference Figure 3 The substrate 111 may include a first pixel region PXLA1 and a second pixel region PXLA2. The first pixel region PXLA1 and the second pixel region PXLA2 may be regions on which multiple light-emitting elements ED are arranged.

[0087] Figure 3The diagram shows first light-emitting elements (ED1a, ED1b, and ED1c) arranged in a first pixel region PXLA1. The first light-emitting elements (ED1a, ED1b, and ED1c) are light-emitting elements ED transferred by the light-emitting element transfer device 300. For example, after the light-emitting element transfer device 300 is positioned on the first pixel region PXLA1, the light-emitting element transfer device 300 can move closer to the substrate 111 and transfer the light-emitting elements ED in the first pixel region PXLA1.

[0088] After the first light-emitting elements (ED1a, ED1b, and ED1c) are transferred, the light-emitting element transfer device 300 can move away from the substrate 111. That is, the light-emitting element transfer device 300 can be spaced apart from the substrate 111. Thereafter, the light-emitting element transfer device 300 can move along the second direction D2 from the first pixel region PXLA1 to the second pixel region PXLA2.

[0089] The light-emitting element transfer device 300 can be spaced apart from the substrate 111 and located on the second pixel region PXLA2. In this case, the second light-emitting elements (ED2a, ED2b and ED2c) can be held at the lower part of the light-emitting element transfer device 300.

[0090] When the light-emitting element transfer device 300 moves closer to the substrate 111 in the first direction D1, the second light-emitting elements (ED2a, ED2b, and ED2c) can be transferred in the second pixel region PXLA2. Multiple light-emitting elements ED can be stored or stacked inside the light-emitting element transfer device 300. This will be described below.

[0091] Reference Figure 4 and Figure 5 The light-emitting element transfer device 300 may include multiple aperture regions HA. (See reference...) Figure 4 Multiple hole regions HA can be arranged in rows. (Refer to...) Figure 5 Multiple aperture regions HA can be arranged in a matrix. Multiple light-emitting elements ED can be stacked inside the multiple aperture regions HA, and each of the multiple light-emitting elements ED can be... Figure 2 The light-emitting element ED is shown.

[0092] Reference Figure 4 and Figure 5 The multiple aperture regions HA can have a circular shape. However, aspects of this disclosure are not limited thereto. For example, the multiple aperture regions HA can have various shapes such as rectangles and squares.

[0093] The multiple aperture regions HA can be areas for stacking or storing light-emitting elements ED, and also areas for controlling the position of the light-emitting elements ED. The light-emitting element transfer device 300 can control the position of the light-emitting elements ED by forming or removing an electric field in the multiple aperture regions HA. The light-emitting element transfer device 300 can transfer the light-emitting elements ED onto the substrate 111 by controlling the position of the light-emitting elements ED.

[0094] Reference Figure 4 The light-emitting element transfer device 300 can transfer multiple light-emitting elements (EDs) row by row. (See reference...) Figure 5 The light-emitting element transfer device 300 can transfer multiple light-emitting elements (EDs) to multiple locations simultaneously. Figure 4 and Figure 5 The structure of the light-emitting element transfer device 300 shown is merely an example, and the multiple hole regions HA located in the light-emitting element transfer device 300 can be designed in various forms or patterns. In the following text, for ease of explanation, it will be based on... Figure 5 The structure of the light-emitting element transfer device 300 is described by way of the light-emitting element transfer device 300 shown.

[0095] Figure 5 Regions AB and CD are shown. The cross-sectional view of region AB will be described below.

[0096] Figures 6 to 13 It is along Figure 5 Example cross-section diagram taken from line AB in the diagram.

[0097] Reference Figure 6 The light-emitting element transfer device 300 may include an injection section 310, a stacking section 320, and an output section 330. The stacking section 320 may include a light-emitting element stacking section 623 and a stacking control section 620. The output section 330 may include an insulating section 633 and a transfer output section 630.

[0098] Reference Figure 6 The light-emitting element transfer device 300 may include an injection unit 310, a light-emitting element stacking unit 623, a stacking control unit 620, an insulating unit 633, and a transfer output unit 630. (See reference...) Figure 6 When viewed based on a cross-sectional view taken along line AB, the hole region HA can be included inside the injection section 310, the light-emitting element stack section 623, the stack control section 620, the insulation section 633, and the transfer output section 630, respectively.

[0099] The transfer output section 630 may be located at the bottom of the light-emitting element transfer device 300. The transfer output section 630 may include a positive transfer output section 631 and a negative transfer output section 632. The fifth hole region HA5 may be located between the positive transfer output section 631 and the negative transfer output section 632.

[0100] The positive output section 631 can be in a positive voltage state, and the negative output section 632 can be in a negative voltage state. Therefore, an electric field can be formed between the positive output section 631 and the negative output section 632. The electric field lines can be guided from the positive output section 631 to the negative output section 632.

[0101] The transfer output section 630 can form an electric field in the fifth hole region HA5. For example, the transfer positive output section 631 can be an electrode to which a positive voltage is applied. The transfer negative output section 632 can be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the transfer positive output section 631 and a negative voltage is supplied to the transfer negative output section 632, an electric field can be formed between the transfer positive output section 631 and the transfer negative output section 632.

[0102] The transfer output section 630 can form an electric field in the fifth hole region HA5. For example, the positive transfer output section 631 can be a negatively doped silicon layer. The positive transfer output section 631 can be silicon with phosphorus, arsenic, or other elements corresponding to Group 5 atoms. The negative transfer output section 632 can be a positively doped silicon layer. The negative transfer output section 632 can be silicon with boron, aluminum, or other elements corresponding to Group 3 atoms. When a positive voltage is supplied to the positive transfer output section 631 and a negative voltage is supplied to the negative transfer output section 632, an electric field can be formed between the positive transfer output section 631 and the negative transfer output section 632.

[0103] An insulating portion 633 can be placed on the transfer output portion 630. The insulating portion 633 can include organic or inorganic materials. The insulating portion 633 can electrically insulate the transfer output portion 630 and the stacking control portion 620. When based on... Figure 6 When viewed in the cross-sectional view shown, the fourth hole region HA4 can be located between the left and right sides of the insulating part 633.

[0104] A stacking control unit 620 may be disposed on the insulating portion 633. The stacking control unit 620 may include a positive stacking control unit 621 and a negative stacking control unit 622. The characteristics of the positive stacking control unit 621 may be substantially the same as those of the positive transfer output unit 631. The characteristics of the negative stacking control unit 622 may be substantially the same as those of the negative transfer output unit 632. A third aperture region HA3 may be located between the positive stacking control unit 621 and the negative stacking control unit 622.

[0105] The stacking control unit 620 can form an electric field in the third hole region HA3. For example, the stacking positive control unit 621 can be an electrode to which a positive voltage is applied. The stacking negative control unit 622 can be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the stacking positive control unit 621 and a negative voltage is supplied to the stacking negative control unit 622, an electric field can be formed between the stacking positive control unit 621 and the stacking negative control unit 622.

[0106] The stacked control unit 620 can form an electric field in the third via region HA3. For example, the stacked positive control unit 621 can be a negatively doped silicon layer. The stacked positive control unit 621 can be silicon with phosphorus, arsenic, or other elements corresponding to Group 5 atoms. The stacked negative control unit 622 can be a positively doped silicon layer. The stacked negative control unit 622 can be silicon with boron, aluminum, or other elements corresponding to Group 3 atoms. When a positive voltage is supplied to the stacked positive control unit 621 and a negative voltage is supplied to the stacked negative control unit 622, an electric field can be formed between the stacked positive control unit 621 and the stacked negative control unit 622.

[0107] A light-emitting element stack 623 can be disposed on the stack control unit 620. The light-emitting element stack 623 can be in an electrically neutral state. The light-emitting element stack 623 can include organic materials. For example, the light-emitting element stack 623 can include silicon material. The light-emitting element stack 623 can be a layer on which multiple light-emitting elements (EDs) are stacked. When based on... Figure 6 When viewed in the cross-sectional view shown, the second aperture region HA2 can be located between the left and right portions of the light-emitting element stack 623. Multiple light-emitting elements ED can be located within the second aperture region HA2.

[0108] The injection section 310 can be placed on the light-emitting element stack 623. The injection section 310 may include a positive injection section 611 and a negative injection section 612. The characteristics of the positive injection section 611 may be substantially the same as the characteristics of the positive output section 631. The characteristics of the negative injection section 612 may be substantially the same as the characteristics of the negative output section 632. The first hole region HA1 may be located between the positive injection section 611 and the negative injection section 612.

[0109] The injection section 310 can form an electric field in the first hole region HA1. For example, the positive injection section 611 can be an electrode to which a positive voltage is applied. The negative injection section 612 can be an electrode to which a negative voltage is applied. When a positive voltage is supplied to the positive injection section 611 and a negative voltage is supplied to the negative injection section 612, an electric field can be formed between the positive injection section 611 and the negative injection section 612.

[0110] The implantation section 310 can form an electric field in the first hole region HA1. For example, the positive implantation section 611 can be a negatively doped silicon layer. The positive implantation section 611 can be silicon with phosphorus, arsenic, or other elements corresponding to Group 5 atoms added. The negative implantation section 612 can be a positively doped silicon layer. The negative implantation section 612 can be silicon with boron, aluminum, or other elements corresponding to Group 3 atoms added. When a positive voltage is supplied to the positive implantation section 611 and a negative voltage is supplied to the negative implantation section 612, an electric field can be formed between the positive implantation section 611 and the negative implantation section 612.

[0111] Reference Figure 6The diameter D2 of the upper part of the first aperture region HA1 can be larger than the diameter D1 of the lower part of the first aperture region HA1. In the first direction D1, a portion of the first aperture region HA1 can have a shape in which the diameter of the first aperture region HA1 gradually decreases from top to bottom. For example, half of the first aperture region HA1 (e.g., the upper part) can have an inverted conical shape, and the other half (e.g., the lower part) can have a cylindrical shape. Due to the shape of the first aperture region HA1, the light-emitting element ED can be more easily injected into the first aperture region HA1.

[0112] Reference Figure 7 An electric field can be formed between the positive injection section 611 and the negative injection section 612. The electric field lines can be guided from the positive injection section 611 to the negative injection section 612.

[0113] Reference Figure 7 At least one first light-emitting element ED1 can be moved to the first aperture region HA1. In one or more aspects, the first light-emitting element ED1 can be inserted into the light-emitting element transfer device 300 by inkjet printing, dropper insertion, or the like. In one or more aspects, a solution containing multiple light-emitting elements ED can be injected into the light-emitting element transfer device 300. For example, the solution can be ethylene glycol, etc.

[0114] Reference Figure 7 The first light-emitting element ED1 may include a light-emitting layer, a first electrode, and a second electrode. The light-emitting layer can emit light, and the first and second electrodes can be disposed on one side of the light-emitting layer. The light-emitting layer may include an upper surface and a lower surface. The portion of the light-emitting layer in which the first and second electrodes are disposed may be the lower surface of the light-emitting layer, and the opposite side of the lower surface may be the upper surface.

[0115] Reference Figure 7 When the first light-emitting element ED1 moves closer to the first aperture region HA1, the first electric field can exert an electrical influence on the first electrode and the second electrode. Therefore, the first electrode and the second electrode can be located closer to the first electric field than the light-emitting layer. When the first electrode and the second electrode are located closer to the first electric field than the light-emitting layer, the first light-emitting element ED1 can move into the first aperture region HA1.

[0116] Subsequently, refer to Figure 8 The first light-emitting element ED1 can enter the second aperture region HA2. When the lower surface ED1us of the first light-emitting element ED1 located in the first aperture region HA1 is downward in the first direction D1, the first electric field formed in the injection section 310 can be removed. Therefore, the first light-emitting element ED1 can move from the first aperture region HA1 to the second aperture region HA2.

[0117] For example, the first electrode and the second electrode of the first light-emitting element ED1 can face downwards in the first direction D1. In this example, the lower surface ED1us of the first light-emitting element ED1 can face downwards in the first direction D1. The first light-emitting element ED1 can be located in the second hole region HA2. This can be represented as the first light-emitting element ED1 being stacked in the light-emitting element stack 623.

[0118] Reference Figure 8 At least one second light-emitting element ED2 can be moved to the first aperture region HA1. When the second light-emitting element ED2 moves closer to the first aperture region HA1, the first electric field can affect the second light-emitting element ED2. Therefore, the lower surface ED2us of the second light-emitting element ED2 can face downwards in the first direction D1. (Refer to...) Figure 7 The lower surface ED1us of the first light-emitting element ED1 can be tilted to the right, and therefore, the first light-emitting element ED1 can rotate to the right. (See reference...) Figure 8 The lower surface ED2us of the second light-emitting element ED2 can be tilted to the left, and therefore, the second light-emitting element ED2 can be rotated to the left.

[0119] Reference Figure 9 The second light-emitting element ED2 can pass through the first hole region HA1 and enter the second hole region HA2. In this case, the first light-emitting element ED1 can be located in the stacking control unit 620.

[0120] Reference Figure 9 A second electric field E2 can be formed between the stacked positive control section 621 and the stacked negative control section 622. The electric field lines of the second electric field can run from the stacked positive control section 621 to the stacked negative control section 622. The second electric field can have an electrical effect on the lower surface ED1us of the first light-emitting element ED1, and therefore the first light-emitting element ED1 can be held in the stacked control section 620.

[0121] Reference Figure 9 The third light-emitting element ED3 can move toward the injection section 310. In this case, the first light-emitting element ED1 can be located in the stacking control section 620, the second light-emitting element ED2 can be located in the light-emitting element stacking section 623, and the third light-emitting element ED3 can be located near the injection section 310. Through the first electric field E1, the third light-emitting element ED3 can rotate so that its lower surface ED3us faces downward.

[0122] Reference Figure 10 The third light-emitting element ED3 can pass through the first aperture region HA1 and move to the second aperture region HA2. (Refer to...) Figure 10The first light-emitting element ED1 can be located in the stacking control unit 620, and the second light-emitting element ED2 and the third light-emitting element ED3 can be located in the light-emitting element stacking unit 623. The above process can be repeated, and the nth light-emitting element EDn can be located in the injection unit 310.

[0123] Reference Figure 10 Through the second electric field formed in the stacking control section 620, the light-emitting elements ED can be sequentially stacked in the light-emitting element stacking section 623.

[0124] Reference Figure 11 When a second electric field is formed in the stacking control unit 620, a third electric field E3 can be formed in the transfer output unit 630. The electric field lines of the third electric field in the transfer output unit 630 can be guided from the positive transfer output unit 630 631 to the negative transfer output unit 630 632. (See reference...) Figure 11 When the second electric field is removed from the stacking control unit 620 and a third electric field is formed in the transfer output unit 630, the first light-emitting element ED1 can be located in the transfer output unit 630. In this case, the second light-emitting element ED2 can be located in the stacking control unit 620, and the third light-emitting element ED3 to the nth light-emitting element EDn can be located in the light-emitting element stacking unit 623.

[0125] Reference Figure 12 The third electric field of the transfer output section 630 can be removed, and as the third electric field is removed, the first light-emitting element ED1 can move downward in the first direction D1. Even when the first light-emitting element ED1 moves downward from the transfer output section 630, the second light-emitting element ED2 can remain in the stacking control section 620. For example, even when the first light-emitting element ED1, located in the transfer output section 630, moves downward from the transfer output section 630, the second light-emitting element ED2 can still remain in the stacking control section 620.

[0126] Reference Figure 13 A third electric field can be re-formed in the transfer output section 630, and the second electric field of the stacking control section 620 can then be temporarily removed. Thus, the second light-emitting element ED2 can be located in the transfer output section 630, and the third light-emitting element ED3 can be located in the stacking control section 620.

[0127] Reference Figures 6 to 13 The positions of multiple light-emitting elements EDs that can be controlled by the light-emitting element transfer device 300 have already been described. Hereinafter, an example in which the light-emitting elements EDs are transferred from the light-emitting element transfer device 300 to the substrate 111 will be described.

[0128] Figure 14 and Figure 15An example transfer of a light-emitting element ED to a substrate 111 in a light-emitting element transfer apparatus 300 according to various aspects of the present disclosure is shown.

[0129] Figure 14 It shows Figure 5 A cross-sectional view of region CD in the light-emitting element transfer device 300 shown. Furthermore, Figure 14 A portion of the substrate 111 in region EF of the display panel 110 is shown.

[0130] Reference Figure 14 The first to thirteenth light-emitting elements (ED1 to ED13) can be located in the transfer output section 630, and the fourteenth to twenty-sixth light-emitting elements (ED14 to ED26) can be located in the stacking control section 620. (See reference...) Figure 14 Each LED has its own serial number written on it.

[0131] Reference Figure 14 The electric field can be removed from some of the multiple transfer output sections 630, thereby allowing the first to third light-emitting elements (ED1 to ED3), the seventh to ninth light-emitting elements (ED7 to ED9), and the thirteenth light-emitting element ED13 to be transferred onto the substrate 111. In this case, for proper spacing between pixels, the fourth to sixth light-emitting elements (ED4 to ED6) and the tenth to twelfth light-emitting elements (ED10 to ED12) may not be transferred onto the substrate 111.

[0132] Figure 15 A portion of the substrate 111 in region GH of the display panel 110 is shown. (See reference...) Figure 15 The fourth to sixth light-emitting elements (ED4 to ED6) and the tenth to twelfth light-emitting elements (ED10 to ED12) can be transferred onto the substrate 111.

[0133] Subsequently, the fourteenth to sixteenth light-emitting elements (ED14 to ED16), the twentieth to twenty-second light-emitting elements (ED20 to ED22), and the twenty-sixth light-emitting element ED26 can be located in the transfer output section 630. In addition, the seventeenth to nineteenth light-emitting elements (ED17 to ED19) and the twenty-third to twenty-fifth light-emitting elements (ED23 to ED25) can be located in the stacking control section 620.

[0134] The foregoing discussion can be summarized as follows. A control device (e.g., a light-emitting element transfer device 300) can transfer light-emitting elements (EDs) onto the substrate 111. Multiple light-emitting elements (EDs) can be stacked in the control device. The EDs can be injected into the control device through the injection section 310, and the positions of the EDs can be aligned through the injection section 310. Multiple EDs can be stacked in the light-emitting element stacking section 623. Furthermore, one ED can be located in the stacking control section 620, and the ED located in the light-emitting element stacking section 623 can be located inside the control device as well as the ED located in the stacking control section 620. When the ED is located in the stacking control section 620, the ED can be transferred onto the substrate 111 as the electric field in the stacking control section 620 is removed.

[0135] The injection section 310 of the control device can easily align and stack multiple light-emitting elements ED such that the lower surface of the light-emitting elements ED faces downward in the first direction D1. Therefore, the light-emitting elements ED can be easily stacked inside the light-emitting element transfer device 300.

[0136] Figure 16 This is a flowchart of a method for driving a light-emitting element transfer device according to various aspects of this disclosure.

[0137] In the light-emitting element injection step S1610, a first electric field E1 is formed through the element injection section 310 to hold the first light-emitting element ED1 among the plurality of light-emitting elements ED in the element injection section 310. The first electric field E1 causes the lower part of the first light-emitting element ED1 to face a specified direction.

[0138] In the light-emitting element stacking step S1620, a second electric field E2 is formed through the stacking section 320 located below the element injection section 310, and the first electric field E1 is removed through the element injection section 310, causing the first light-emitting element ED1 to move to the stacking section 320 and remain in the stacking section 320. Multiple light-emitting elements ED are stacked in the stacking section 320.

[0139] In the first transfer preparation step S1630, a third electric field E3 is formed through the output section 330 located below the element injection section 310, and the second electric field E2 is removed through the stacking section 320, causing the first light-emitting element ED1 to move to the output section 330 and remain in the output section 330. The second light-emitting element ED2 among the plurality of light-emitting elements ED is located in the stacking section 320 by the re-formed second electric field E2.

[0140] In the transfer step S1640, the third electric field E3 is removed by the output section 330 to transfer the first light-emitting element ED1 onto the substrate.

[0141] In the second transfer preparation step S1650, the second light-emitting element ED2 is located in the output section 330 by the re-formed third electric field E3, and the third light-emitting element ED3 among the plurality of light-emitting elements ED is located in the stacking section 320 by the re-formed second electric field E2.

[0142] Examples, aspects, and implementations of the light-emitting element transfer device 300 described herein can be described as follows.

[0143] According to one or more exemplary embodiments described herein, a light-emitting element transfer device may be provided, comprising: a plurality of injection sections into which a plurality of light-emitting elements are respectively injected; a plurality of stacking sections corresponding to the plurality of injection sections and allowing the plurality of light-emitting elements respectively injected into the plurality of injection sections to be stacked; and a plurality of output sections corresponding to the plurality of stacking sections and sequentially outputting the plurality of light-emitting elements stacked in the plurality of stacking sections.

[0144] In one or more aspects, each of the plurality of injection portions may include a positive injection portion, a negative injection portion, and a component injection portion, the component injection portion including a first hole region located between the positive injection portion and the negative injection portion. In one or more aspects, each of the plurality of stacking portions may include: a light-emitting element stacking portion disposed below the component injection portion and including a second hole region located below the first hole region; and a stacking control portion including a stacked positive control portion, a stacked negative control portion, and a third hole region located between the stacked positive control portion and the stacked negative control portion. In one or more aspects, each of the plurality of output portions may include: an insulating portion located below the stacking control portion, the insulating portion including a fourth hole region located below the third hole region, and including an insulating material; and a transfer output portion including a transfer positive output portion, a transfer negative output portion, and a fifth hole region located between the transfer positive output portion and the transfer negative output portion.

[0145] In one or more aspects, each of the plurality of injection units can cause a first electric field to be formed between the positive injection unit and the negative injection unit. In one or more aspects, the stacking control unit can cause a second electric field to be formed between the stacked positive control unit and the stacked negative control unit. In one or more aspects, the transfer output unit can cause a third electric field to be formed between the transfer positive output unit and the transfer negative output unit.

[0146] In one or more aspects, each of the plurality of injection portions can form a first electric field that enables at least one of the plurality of light-emitting elements to rotate, and the first electric field enables the lower portion of the first light-emitting element to face a first direction. For example, the first direction may be a direction from the first aperture region to the second aperture region.

[0147] In one or more aspects, each of the plurality of injection portions removes the first electric field after the lower portion of the first light-emitting element is positioned facing a first direction, such that the first light-emitting element can be moved to the second hole region of the light-emitting element stack.

[0148] In one or more aspects, when the first light-emitting element is located in the second hole region, at least one of the plurality of light-emitting elements may be located in the first hole region of the element injection portion.

[0149] In one or more aspects, the stacking control unit forms the second electric field to hold the first light-emitting element in the third hole region as the first light-emitting element moves from the second hole region to the third hole region.

[0150] In one or more aspects, the second light-emitting element may be located on the first light-emitting element located in the third hole region, and the second light-emitting element and the third light-emitting element among the plurality of light-emitting elements may be located in the second hole region of the light-emitting element stack.

[0151] In one or more ways, the transfer output unit can form a third electric field, and after the transfer output unit has formed the third electric field, the stacking control unit can remove the second electric field.

[0152] In one or more aspects, the first light-emitting element may be located in the fifth hole region by the third electric field, and the second light-emitting element may be located in the third hole region by the second electric field re-formed by the stacking control unit.

[0153] In one or more aspects, the transfer output section can remove the third electric field, such that the first light-emitting element is transferred from the transfer output section to the substrate in a first direction, and when the transfer output section removes the third electric field, the stacking control section can maintain the second electric field, such that the second light-emitting element is held in the third aperture region.

[0154] In one or more aspects, the transfer output section can re-form a third electric field and the stacking control section can remove the second electric field again, so that the second light-emitting element can be located in the fifth hole region of the transfer output section.

[0155] In one or more aspects, the positive injection portion may be an electrode to which a first voltage is applied, and the negative injection portion may be an electrode to which a second voltage less than the first voltage is applied.

[0156] In one or more aspects, the positive implantation portion may include silicon material of a first doping type, and the negative implantation portion may include silicon material of a second doping type different from the first doping type. In one or more aspects, when a first voltage is supplied to the positive implantation portion and a second voltage having a voltage level lower than the first voltage is supplied to the negative implantation portion, the device implantation portion may form a first electric field in the first hole region.

[0157] In one or more aspects, the diameter of the upper part of the first hole region is larger than the diameter of the lower part, and the diameter of the upper part gradually decreases from top to bottom.

[0158] According to one or more exemplary embodiments described herein, a method for driving a light-emitting element transfer device can be provided, the method comprising: a light-emitting element injection step, wherein a first electric field is formed through an element injection portion to hold a first light-emitting element among a plurality of light-emitting elements in the element injection portion; a light-emitting element stacking step, wherein a second electric field is formed through a stack portion located below the element injection portion and the first electric field is removed through the element injection portion, such that the first light-emitting element moves to the stack portion and is held in the stack portion; a first transfer preparation step, wherein a third electric field is formed through an output portion located below the stack portion and the second electric field is removed through the stack portion, such that the first light-emitting element moves to the output portion and is held in the output portion; and a transfer step, wherein the third electric field is removed through the output portion to transfer the first light-emitting element onto a substrate.

[0159] In one or more aspects, during the light-emitting element injection step, the lower part of the first light-emitting element can be oriented in a specified direction by a first electric field.

[0160] In one or more methods, during the light-emitting element stacking step, multiple light-emitting elements may be stacked in the stacking section.

[0161] In one or more aspects, during the first transfer preparation step, at least one second light-emitting element among a plurality of light-emitting elements may be located in the stacked portion by a second electric field that is re-formed.

[0162] In one or more aspects, the method further includes a second transfer preparation step performed after the transfer step, wherein in the second transfer preparation step, the second light-emitting element may be located in the output section by a re-formed third electric field, and at least one of the plurality of light-emitting elements, the third light-emitting element, may be located in the stacking section by a re-formed second electric field.

[0163] The above description is presented to enable any person skilled in the art to make, use, and practice the technical features of the invention, and has been provided as examples in the context of specific applications and their requirements. Various modifications, additions, and substitutions to the described embodiments will be readily apparent to those skilled in the art, and the principles described herein can be applied to other embodiments and applications without departing from the scope of the invention. The above description and drawings provide examples of the technical features of the invention for illustrative purposes only. That is, the disclosed embodiments are intended to illustrate the scope of the technical features of the invention.

Claims

1. A light-emitting element transfer device, comprising: Multiple injection sections are used, and multiple light-emitting elements are injected into the multiple injection sections respectively. Multiple stacked sections, each corresponding to a multiple injection section, allow multiple light-emitting elements, each injected into a multiple injection section, to be stacked; as well as Multiple output sections, each corresponding to a multiple stacked section, sequentially output the multiple light-emitting elements stacked in the multiple stacked sections.

2. The light-emitting element transfer device according to claim 1, wherein, Each of the plurality of injection sections includes a positive injection section, a negative injection section, and a component injection section, the component injection section including a first aperture region located between the positive injection section and the negative injection section. Each of the plurality of stacked portions includes: A light-emitting element stack, wherein the light-emitting element stack is disposed below the element injection section, and includes a second hole region located below the first hole region; and A stacking control unit, comprising a positive stacking control unit, a negative stacking control unit, and a third hole region located between the positive stacking control unit and the negative stacking control unit, and Each of the plurality of output units includes: An insulating portion located below the stacking control section, the insulating portion including a fourth hole region located below the third hole region, and comprising insulating material; and The transfer output section includes a positive transfer output section, a negative transfer output section, and a fifth hole region located between the positive transfer output section and the negative transfer output section.

3. The light-emitting element transfer device according to claim 2, wherein, Each of the plurality of injection portions enables the formation of a first electric field between the positive injection portion and the negative injection portion. The stacking control unit enables the formation of a second electric field between the positive stacking control unit and the negative stacking control unit. The transfer output section enables the formation of a third electric field between the positive transfer output section and the negative transfer output section.

4. The light-emitting element transfer device according to claim 3, wherein, Each of the plurality of injection portions forms the first electric field, enabling the first light-emitting element among the plurality of light-emitting elements to rotate. Wherein, the first electric field enables the lower part of the first light-emitting element to face the first direction, and The first direction is the direction from the first hole region to the second hole region.

5. The light-emitting element transfer device according to claim 4, wherein, Each of the plurality of injection portions removes the first electric field after the lower portion of the first light-emitting element is placed facing the first direction, causing the first light-emitting element to move into the second hole region of the light-emitting element stack.

6. The light-emitting element transfer device according to claim 5, wherein, When the first light-emitting element is located in the second hole region, the second light-emitting element among the plurality of light-emitting elements is located in the first hole region of the element injection portion.

7. The light-emitting element transfer device according to claim 6, wherein, The stacking control unit forms the second electric field to hold the first light-emitting element in the third hole region when the first light-emitting element moves from the second hole region to the third hole region.

8. The light-emitting element transfer device according to claim 7, wherein, The second light-emitting element is located on the first light-emitting element in the third hole region, and the second light-emitting element and the third light-emitting element among the plurality of light-emitting elements are located in the second hole region of the light-emitting element stack.

9. The light-emitting element transfer device according to claim 8, wherein, The transfer output unit generates the third electric field, and after the transfer output unit has generated the third electric field, the stacking control unit removes the second electric field.

10. The light-emitting element transfer device according to claim 9, wherein, The first light-emitting element is located in the fifth aperture region by the third electric field, and The second light-emitting element is located in the third hole region by the second electric field re-formed by the stacking control unit.

11. The light-emitting element transfer device according to claim 10, wherein, The transfer output section removes the third electric field, causing the first light-emitting element to be transferred from the transfer output section to the substrate in the first direction, and When the third electric field is removed by the transfer output section, the stacking control section maintains the second electric field, so that the second light-emitting element is held in the third aperture region.

12. The light-emitting element transfer device according to claim 11, wherein, The transfer output section re-forms the third electric field and the stacking control section removes the second electric field again, so that the second light-emitting element is located in the fifth hole region of the transfer output section.

13. The light-emitting element transfer device according to claim 2, wherein, The positive injection portion is an electrode to which a first voltage is applied, and the negative injection portion is an electrode to which a second voltage, less than the first voltage, is applied.

14. The light-emitting element transfer device according to claim 2, wherein, The positive implantation portion includes silicon material of a first doping type, and the negative implantation portion includes silicon material of a second doping type different from the first doping type. Specifically, when a first voltage is supplied to the positive injection section and a second voltage having a voltage level lower than the first voltage is supplied to the negative injection section, the element injection section forms a first electric field in the first hole region.

15. The light-emitting element transfer device according to claim 2, wherein, The upper diameter of the first hole region is larger than the lower diameter, and the upper diameter gradually decreases from top to bottom.

16. A method for driving a light-emitting element transfer device, the method comprising: In the light-emitting element injection step, a first electric field is formed through the element injection section to hold a first light-emitting element among a plurality of light-emitting elements in the element injection section. In the light-emitting element stacking step, a second electric field is formed through a stacking portion located below the element injection portion, and the first electric field is removed through the element injection portion, causing the first light-emitting element to move to and remain in the stacking portion. In the first transfer preparation step, a third electric field is formed through the output section located below the stacked section, and the second electric field is removed through the stacked section, causing the first light-emitting element to move to the output section and remain in the output section. The transfer step involves removing the third electric field through the output section to transfer the first light-emitting element onto the substrate.

17. The method according to claim 16, wherein, In the light-emitting element injection step, the lower part of the first light-emitting element is oriented in a specified direction by the first electric field.

18. The method according to claim 16, wherein, In the light-emitting element stacking step, the plurality of light-emitting elements are stacked in the stacking section.

19. The method according to claim 18, wherein, In the first transfer preparation step, the second light-emitting element among the plurality of light-emitting elements is located in the stacked portion by the re-formed second electric field.

20. The method of claim 19, further comprising a second transfer preparation step performed after the transfer step. in, In the second transfer preparation step, the second light-emitting element is located in the output section by the re-formed third electric field, and the third light-emitting element among the plurality of light-emitting elements is located in the stacking section by the re-formed second electric field.

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