Bottom-up plating of glass vias

Metallization of conductive vias in glass substrates using bottom-up electroplating technology solves the CTE mismatch-induced stress problem, improves the structural integrity of glass substrates and the reliability of multilayer integration, and reduces costs.

CN122249058APending Publication Date: 2026-06-19INTEL CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INTEL CORP
Filing Date
2025-11-16
Publication Date
2026-06-19

AI Technical Summary

Technical Problem

Metallization of conductive vias (TGVs) in glass substrates presents a CTE mismatch-induced stress problem, which leads to structural integrity damage and warping. Existing technologies make it difficult to achieve multilayer integration of glass substrates efficiently and at low cost.

Method used

A bottom-up electroplating technique is employed, including subtractive etching, a modified semi-additive process, and a flowable cavity-filling material. This avoids the use of seed materials on the TGV opening sidewalls and is combined with an inner liner to alleviate CTE mismatch-induced stress and reduce processing steps.

Benefits of technology

It effectively reduces CTE mismatch-induced stress, improves the structural integrity of the glass substrate and the reliability of multilayer integration, reduces costs and increases design flexibility.

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Abstract

This invention discloses various techniques, related devices, and methods for metallizing through-glass vias (TGVs) in glass substrates using bottom-up electroplating. The first technique is based on subtractive etching. The second technique is based on a modified semi-additive process. The third technique is based on using a flowable material to fill the cavities in the glass substrate while simultaneously performing bottom-up electroplating. Any of these techniques can be further modified by including a liner on the sidewalls of the TGV to serve as a buffer layer between the glass substrate and one or more conductive materials in the TGV.
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