Sapphire glass micro through hole processing method based on laser-induced etching process

By combining femtosecond laser modification and coaxial plasma activation with a three-stage etching process, the problems of controllability of the modified area and uneven etching rate in the processing of micro-vias in sapphire glass have been solved. This has enabled efficient and low-damage processing of high aspect ratio micro-vias, which is suitable for the manufacturing of sapphire devices in high-end fields.

CN122252830APending Publication Date: 2026-06-23ANHUI HUACHUANG HONGDU OPTOELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202610645427.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-05-12
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing laser-induced etching processes for processing micro-vias in sapphire glass suffer from problems such as poor controllability of the modified area, uneven etching rate, and poor process compatibility. They are difficult to achieve efficient and high-precision processing of micro-vias with high aspect ratios, and have poor adaptability and high cost.

Method used

By employing femtosecond laser precision modification, coaxial plasma activation, and a three-stage etching process, combined with a domestically produced femtosecond laser module, and by limiting laser parameters and etching solution ratios, high-precision modification and selective etching of sapphire glass are achieved. Combined with low-temperature annealing, processing quality and efficiency are ensured.

Benefits of technology

It achieves high aspect ratio and low damage processing of sapphire glass micro-vias, with high processing precision, low cost, and strong adaptability. It is suitable for high-end fields such as all-sapphire fiber optic Fabry-Perot cavity high-temperature pressure sensors and LED packaging, meeting the requirements of extreme environments.

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Abstract

The invention relates to a sapphire glass micro-through-hole processing method based on a laser-induced etching process, which belongs to the technical field of glass through-hole processing, and adopts a synergistic pretreatment process of domestic femtosecond laser accurate induction modification and coaxial nitrogen low-temperature plasma activation to process a sapphire glass micro-through-hole by limiting core process parameters of femtosecond laser. The stable alpha-Al2O3 crystal in the sapphire is directionally converted into gamma-Al2O3 with higher chemical activity, a modified area with the diameter of 2-3 microns is formed, the size of the modified area is accurate and controllable, the problems of through hole size deviation and non-perpendicularity of the side wall caused by overlarge or insufficient modification range of an existing process are fundamentally solved, and the method is suitable for industrial production. The coaxial plasma can clean a modified area in a targeted mode, hydrophilic functional groups are introduced, the infiltration uniformity of etching liquid is greatly improved, laser energy is concentrated on the modified area, a heat affected zone is extremely small, the whole process is free of thermal defects such as cracks and heavy condensates, and the technology is completely matched with a domestic femtosecond laser processing module.
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