A method for monitoring the quality of phosphorus diffusion passivation of BC battery in consideration of RCA cleaning state

By pre-forming a P-type polysilicon layer on the monitoring chip and simulating RCA cleaning, combined with the formation and detection methods of the N-type polysilicon layer, the problem of inaccurate monitoring results in existing monitoring methods is solved, and accurate assessment of phosphorus diffusion passivation quality and process debugging support are achieved.

CN122270080APending Publication Date: 2026-06-23JIANGSU RUNYANG SOLAR TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU RUNYANG SOLAR TECH CO LTD
Filing Date
2026-02-24
Publication Date
2026-06-23

AI Technical Summary

Technical Problem

Existing methods for monitoring the quality of phosphorus diffusion passivation in BC batteries cannot accurately reflect the actual RCA cleaning status, resulting in inaccurate monitoring results and failing to provide effective basis for process debugging.

Method used

A P-type polycrystalline silicon layer is pre-formed on the monitoring chip to simulate the surface structure of the actual BC cell before RCA cleaning. An N-type polycrystalline silicon layer is then formed after RCA cleaning. Combined with PL testing and other detection methods, the quality of phosphorus diffusion passivation is comprehensively evaluated.

Benefits of technology

It improves the accuracy and relevance of monitoring results, truly reflects the passivation level of the phosphorus diffusion process in the production line, provides a reliable basis for process parameter debugging, and eliminates RCA interference caused by mismatch in the monitoring chip structure.

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Abstract

The present application relates to the technical field of solar cells, and particularly relates to a monitoring method for the passivation quality of a BC cell phosphorus diffusion considering RCA cleaning state; comprising the following steps: double-side alkali polishing is performed on a first type silicon substrate; after double-side deposition of amorphous silicon layer, second type element doping is performed, and acid washing is performed to remove glass body; then RCA cleaning is performed; after double-side deposition of amorphous silicon layer, first type element doping is performed to obtain a monitoring piece; the monitoring piece is detected, and the production line state is adjusted according to the monitoring result as needed; the monitoring method can consider the interference of RCA cleaning state in the actual production line, and is more in line with the actual process of phosphorus diffusion passivation monitoring process; the method result is accurate and reliable, and RCA interference caused by the mismatch of the monitoring piece structure is fundamentally eliminated, so that the final passivation quality test result can truly and accurately reflect the passivation level of the production line phosphorus diffusion process, and provide a reliable basis for accurate adjustment of process parameters.
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