Sub-hundred picosecond ultrafast scintillator and preparation method and application thereof
By preparing CsPbCl3 nanocrystals and combining them with a matrix material, and employing an exciton recombination path renormalization strategy, the problem of existing ultrafast scintillation crystals being unable to achieve lifetimes below 100 picoseconds at room temperature was solved, and the preparation of ultrafast scintillation bodies was realized, which can be applied to fields such as high-energy physics and nuclear medicine imaging.
CN122278474APending Publication Date: 2026-06-26PEKING UNIV
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- PEKING UNIV
- Filing Date
- 2026-03-19
- Publication Date
- 2026-06-26
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Abstract
This invention discloses a sub-picosecond ultrafast scintillator, its preparation method, and its applications. The invention employs ligand-assisted deposition and high-temperature thermal injection to prepare all-inorganic metal halide perovskite CsPbCl3 nanocrystals. Through size optimization and ligand engineering, a strategy is proposed to passivate shallow defect levels, reducing the carrier residence time in shallow defect states while appropriately retaining deep defect levels. This achieves exciton recombination path renormalization in the nanocrystals, ultimately realizing ultrafast scintillation of <100 ps at room temperature.
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