Semiconductor device and power module
By designing a two-layer trench structure in the IGBT and optimizing the position of the upper electrode, the problem of reduced withstand voltage caused by overlap in high electric field regions is solved, thus improving the withstand voltage performance of the IGBT.
CN122294517APending Publication Date: 2026-06-26MITSUBISHI ELECTRIC CORP
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MITSUBISHI ELECTRIC CORP
- Filing Date
- 2025-11-18
- Publication Date
- 2026-06-26
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Figure CN122294517A_ABST
Abstract
The purpose of this disclosure is to provide a semiconductor device capable of improving voltage withstand capability. The semiconductor device of this disclosure includes: a semiconductor substrate; a base layer disposed on the upper surface side of the semiconductor substrate; at least one carrier accumulation layer disposed below the base layer; and at least one two-layer trench, wherein an upper electrode is provided in the upper layer and a lower electrode is provided in the lower layer within the trench extending through the base layer and the carrier accumulation layer on the upper surface side of the semiconductor substrate. The lower end of the upper electrode is located above the lower end of the carrier accumulation layer and below the center position of the carrier accumulation layer in the vertical direction.
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Citation Information
Patent Citations
Semiconductor device
JP2020077727A