Display panel and display device

Abstract

This application discloses a display panel and a display device. The display panel has a first region and a second region surrounding the first region. The display panel includes: a substrate; a first functional layer disposed on one side of the substrate, including a first functional structure located in the first region and a second functional structure located in the second region; an active layer disposed on the side of the first functional layer facing away from the substrate; and a first metal layer disposed on the side of the active layer facing away from the substrate, the first metal layer including a first metal structure located in the first region and a second metal structure located in the second region; wherein the orthographic projection of the first functional structure on the substrate and the orthographic projection of the first metal structure on the substrate are spaced apart, and the orthographic projection of the second functional structure on the substrate and the orthographic projection of the second metal structure on the substrate at least partially overlap.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to a display panel and a display device. Background Technology

[0002] Organic light-emitting diode (OLED) display technology is considered the most promising next-generation display technology. Compared with liquid crystal display technology, OLED display technology has advantages such as low energy consumption, low cost, self-emissiveness, wide viewing angle, and fast response speed.

[0003] However, the current manufacturing process of OLED display products needs improvement. Summary of the Invention

[0004] This application provides a display panel and a display device, which aim to improve the electrostatic discharge protection capability of the display panel.

[0005] An embodiment of the first aspect of this application provides a display panel having a first region and a second region surrounding the first region. The display panel includes: a substrate; a first functional layer disposed on one side of the substrate, including a first functional structure located in the first region and a second functional structure located in the second region; an active layer disposed on the side of the first functional layer facing away from the substrate; and a first metal layer disposed on the side of the active layer facing away from the substrate, the first metal layer including a first metal structure located in the first region and a second metal structure located in the second region; wherein the orthographic projection of the first functional structure on the substrate and the orthographic projection of the first metal structure on the substrate are spaced apart, and the orthographic projection of the second functional structure on the substrate and the orthographic projection of the second metal structure on the substrate at least partially overlap.

[0006] An embodiment of the second aspect of this application provides a display device, which includes the display panel of the above-described embodiments.

[0007] In a display panel provided in this application embodiment, the display panel has a first region and a second region disposed around the first region. The display panel includes a substrate, which may be located in both the first and second regions, and can be used to support structures within the first and second regions. The display panel also includes a first functional layer, an active layer, and a first metal layer. The first functional layer is disposed on one side of the substrate, the active layer is disposed on the side of the first functional layer facing away from the substrate, and the active layer may be located at least in the second region. The first metal layer is disposed on the side of the active layer facing away from the substrate, and includes a second metal structure located within the second region. The second metal structure and the active layer can be used to participate in constituting the circuit structure within the second region. The first metal layer includes a first metal structure located within the first region, and the first metal structure can be used to influence the structural morphology within the first region, thereby helping to limit the intrusion of moisture into the second region.

[0008] The first functional layer includes a first functional structure located in a first region and a second functional structure located in a second region. The orthographic projection of the second functional structure on the substrate and the orthographic projection of the second metal structure on the substrate at least partially overlap, so that the second functional structure can be used to discharge the moving charge below the second metal structure, making it less likely for the circuit structure in the second region to accumulate and generate an electric field, which is beneficial to reducing the current hysteresis phenomenon in the second region.

[0009] The first functional structure located in the first region can serve as an electrostatic discharge (ESD) protection mechanism, making it difficult for static electricity to be conducted from the first region to the second region. By setting an interval between the orthographic projection of the first functional structure on the substrate and the orthographic projection of the first metal structure on the substrate, when static electricity accumulates in the first functional structure, it is less likely to affect the first metal structure. This makes it less likely for static electricity to be conducted to the second region through the first metal structure and its overlying film layer, thereby significantly improving the ESD protection capability of the display panel. Attached Figure Description

[0010] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0011] Figure 1 This is a schematic diagram of the structure of a display panel provided in an embodiment of this application; Figure 2 This is a schematic diagram of a pixel circuit provided in an embodiment of this application; Figure 3 This is a partial cross-sectional view of a display panel provided in an embodiment of this application; Figure 4 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 5 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 6 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 7 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 8 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 9 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 10 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 11 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 12 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 13 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 14 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 15 This is a schematic diagram of the structure of a display panel provided in another embodiment of this application; Figure 16 This is a partial cross-sectional view of a display panel provided in another embodiment of this application; Figure 17 This is a partial cross-sectional view of a display panel provided in another embodiment of this application.

[0012] Explanation of reference numerals in the attached figures: 10. Display panel; 100. Substrate; 200. First functional layer; 210. First functional structure; 220. Second functional structure; 230. Third functional structure; 300. Active layer; 310. Semiconductor; 400, First metal layer; 401, First metal structure; 402, Second metal structure; 410, First metal sublayer; 411, First metal substructure; 412, Third metal substructure; 420, Second metal sublayer; 421, Second metal substructure; 422, Fourth metal substructure; 500, Second metal layer; 600, Third metal layer; 700, Planarization layer; 710, First planarization layer; 720, Second planarization layer; 800, Pixel definition layer; 800a, Pixel aperture; 900, Light-emitting device; 910, First electrode; 920, Light-emitting functional layer; 921, Light-emitting structure; 922, Common layer; 930, Second electrode; FS, the second functional layer; FS1, the fourth functional structure; FS2, the fifth functional structure; SL, encapsulation layer; SL1, first encapsulation layer; SL2, second encapsulation layer; SL3, third encapsulation layer; FH, functional hole; SS, Isolation structure; SSa, First type of isolation structure; SSb, Second type of isolation structure; SSc, First recessed structure; SS1, Isolation part; SS1a, First top surface; SS1b, First side surface; SS2, Blocking part; SS3, Conductive material layer; SS3a, Second recessed structure; SS31, First conductive part; SS31a, First curved surface; SS32, Second conductive part; SS33, Third conductive part; SS4, Elevated part; SPC, Support Column; DAM, Dam Structure; DAM1, First Dam Layer; DAM2, Second Dam Layer; DAM3, Third Dam Layer; BS, Barrier Structure; BS1, First Barrier Layer; BS2, Second Barrier Layer; IL1, First insulating layer; IL2, Second insulating layer; IL3, Third insulating layer; IL3a, Second top surface; IL3b, Second side surface; IL31, Raised structure; IL4, Fourth insulating layer; IL5, Fifth insulating layer; IL6, Sixth insulating layer; FL1, First covering layer; FL1a, Hollowed-out structure; TH1, First connecting hole; TH1a, First bottom wall; TH1b, First side wall; TH11, Connecting sub-hole; TH2, Second connecting hole; PC, pixel circuit; PC1, transistor; PC1a, gate; PC1b, source / drain; PC11, oxide transistor; PC2, capacitor; PC2a, first electrode plate; PC2b, second electrode plate; T1, driving transistor; T2, data writing transistor; T3, threshold compensation transistor; T4, first reset transistor; T5, first control transistor; T6, second control transistor; T7, second reset transistor; ELVDD, First power supply voltage signal line; ELVSS, Second power supply voltage signal line; Vdata, Data signal line; VREFN1, First reset signal line; VREFN2, Second reset signal line; EM, Light emission control signal line; S1, First scan signal line; S2, Second scan signal line; S3, Third scan signal line; S4, Fourth scan signal line; GIP, gate drive circuit; TP, touch electrode; A1, First Region; A2, Second Region; A3, Third Region; A31, First Sub-region; A32, Second Sub-region; A33, Third Sub-region; A34, Fourth Sub-region; X, first direction; Y, second direction; Z, third direction. Detailed Implementation

[0013] The features and exemplary embodiments of various aspects of this application will now be described in detail. To make the objectives, technical solutions, and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain this application and are not configured to limit this application. For those skilled in the art, this application can be implemented without some of these specific details. The following description of the embodiments is merely to provide a better understanding of this application by illustrating examples of this application.

[0014] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0015] It should be understood that when describing the structure of a component, when referring to a layer or region as being "above" or "on top of" another layer or region, it can mean that it is directly above the other layer or region, or that it contains other layers or regions between it and the other layer or region. Furthermore, if the component is flipped over, that layer or region will be located "below" or "under" the other layer or region.

[0016] This application provides a display panel and a display device. The following description, in conjunction with the accompanying drawings, will illustrate various embodiments of the display panel and the display device.

[0017] Figure 1 This is a schematic diagram of the structure of a display panel 10 provided in an embodiment of this application. Figure 2 This is a schematic diagram of the structure of a pixel circuit PC provided in an embodiment of this application. Figure 3 This is a partial cross-sectional view of a display panel 10 provided in an embodiment of this application. Figure 4 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Figure 5 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. In the figure, the X direction can represent a first direction, the Y direction can represent a second direction, and the Z direction can represent a third direction. The first direction X, the second direction Y, and the third direction Z can intersect each other. For example, the first direction X, the second direction Y, and the third direction Z can be perpendicular to each other.

[0018] Optional, Figure 3 Can be Figure 1 A partial sectional view at position AA in the middle. Figure 4 Can be Figure 1 Another partial sectional view at position AA in the middle. Figure 5 Can be Figure 1 A partial sectional view at position BB in the middle.

[0019] like Figures 1 to 5 As shown, an embodiment of the first aspect of this application provides a display panel 10. The display panel 10 has a first region A1 and a second region A2 disposed around the first region A1. The display panel 10 includes: a substrate 100; a first functional layer 200 disposed on one side of the substrate 100, including a first functional structure 210 located in the first region A1 and a second functional structure 220 located in the second region A2; an active layer 300 disposed on the side of the first functional layer 200 away from the substrate 100; and a first metal layer 400 disposed on the side of the active layer 300 away from the substrate 100, the first metal layer 400 including a first metal structure 401 located in the first region A1 and a second metal structure 402 located in the second region A2; wherein the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the first metal structure 401 on the substrate 100 are spaced apart, and the orthographic projection of the second functional structure 220 on the substrate 100 and the orthographic projection of the second metal structure 402 on the substrate 100 at least partially overlap.

[0020] In a display panel 10 provided in this application embodiment, the display panel 10 has a first region A1 and a second region A2 disposed around the first region A1. The display panel 10 includes a substrate 100, which can be located in the first region A1 and the second region A2. The substrate 100 can be used to support the structure in the first region A1 and the second region A2.

[0021] Optionally, the first direction X and the second direction Y are both parallel to the plane where the substrate 100 is located, and the third direction Z can be perpendicular to the plane where the substrate 100 is located.

[0022] Optionally, the second region A2 may be the display area of ​​the display panel 10, meaning that at least a portion of the second region A2 of the display panel 10 can emit light for display. For example, the display panel 10 may include a pixel circuit PC at least partially located within the second region A2, and the display panel 10 may also include a light-emitting device 900 at least partially located within the second region A2. Both the pixel circuit PC and the light-emitting device 900 may be located on the same side of the substrate 100 in the third direction Z. The pixel circuit PC may be connected to the light-emitting device 900 and used to drive and control the light emission of the light-emitting device 900.

[0023] Optionally, the display panel 10 provided in this application embodiment may be a display panel 10 that emits light based on the principle of Liquid Crystal Display (LCD), or a display panel 10 that emits light based on the principle of Organic Light Emitting Diode (OLED), or a display panel 10 that emits light based on the principle of Quantum Dot Light Emitting Diodes (QLED). This application does not specifically limit its application. For ease of description, the following embodiments will use the display panel 10 provided in this application embodiment that emits light based on the principle of Organic Light Emitting Diode (OLED) as an example for illustration.

[0024] For example, in the direction away from the substrate 100, the light-emitting device 900 includes a first electrode 910, a light-emitting functional layer 920, and a second electrode 930 stacked sequentially. The first electrode 910 and the second electrode 930 can serve as pixel electrodes of the display panel 10. One of the first electrode 910 and the second electrode 930 can serve as an anode, and the other can serve as a cathode to drive the light-emitting functional layer 920 to emit light. In this embodiment, the first electrode 910 is used as the anode of the display panel 10, and the second electrode 930 is used as the cathode of the display panel 10 for illustrative purposes.

[0025] Optionally, the light-emitting functional layer 920 may include a light-emitting structure 921 and a common layer 922 disposed on at least one side of the light-emitting structure 921 in the third direction Z. For example, the common layer 922 may be disposed on both sides of the light-emitting structure 921 in the third direction Z. The common layer 922 disposed on the side of the light-emitting structure 921 facing the substrate 100 may include a hole injection layer (HIL) and a hole transport layer (HTL). The common layer 922 disposed on the side of the light-emitting structure 921 facing away from the substrate 100 may include an electron injection layer (EIL) and an electron transport layer (ETL).

[0026] Optionally, the second electrodes 930 of each light-emitting device 900 can be electrically connected to each other, thereby facilitating control of the display panel 10. For example, the second electrodes 930 of each light-emitting device 900 can be integrally formed. Optionally, the common layer 922 of each light-emitting device 900 can be integrally formed to facilitate the fabrication of the display panel 10.

[0027] Optionally, the display panel 10 may further include a pixel definition layer 800 disposed on the side of the first electrode 910 facing away from the substrate 100. The pixel definition layer 800 may have a pixel opening 800a. The light-emitting functional layer 920 and the second electrode 930 may extend from inside the pixel opening 800a to outside the pixel opening 800a. At least a portion of the surface of the first electrode 910 facing away from the substrate 100 may be exposed from the pixel opening 800a and connected to the light-emitting functional layer 920. The pixel definition layer 800 may be used to participate in dividing the sub-pixels of the display panel 10.

[0028] Optionally, the pixel circuit PC may include a transistor PC1 and a capacitor PC2. For example, transistor PC1 may include a semiconductor 310, a gate PC1a, and source / drain PC1b. For example, semiconductor 310 may have a channel and source and drain regions respectively disposed on opposite sides of the channel. Gate PC1a may be disposed on at least one side of the channel in the third direction Z. Source / drain PC1b may include a source and a drain, with the source connected to a source region via and the drain connected to a drain region via. Capacitor PC2 includes a first electrode PC2a and a second electrode PC2b located on the side of the first electrode PC2a facing away from the substrate 100.

[0029] Optionally, there are various ways to configure the working principle and circuit structure of the pixel circuit PC. The pixel circuit PC includes multiple transistors PC1, and the pixel circuit PC can be a 2T1C, 4T1C, 6T1C, 7T1C, 7T2C, 8T1C, or 8T2C circuit structure. For ease of description, the following embodiments will use a pixel circuit PC including a 7T1C circuit structure as an example.

[0030] For example, the pixel circuit PC may include a driving transistor T1, a data writing transistor T2, a threshold compensation transistor T3, a first reset transistor T4, a first control transistor T5, a second control transistor T6, a second reset transistor T7, and a capacitor PC2. The display panel 10 may also include a first power supply voltage signal line ELVDD, a second power supply voltage signal line ELVSS, a data signal line Vdata, a first reset signal line VREFN1, a second reset signal line VREFN2, a light emission control signal line EM, a first scan signal line S1, a second scan signal line S2, a third scan signal line S3, and a fourth scan signal line S4.

[0031] The first terminal of the first control transistor T5 can be connected to the second plate PC2b of the capacitor PC2, and both the first terminal of the first control transistor T5 and the second plate PC2b of the capacitor PC2 can be connected to the first power supply voltage signal line ELVDD (e.g., a positive power supply voltage signal line). The first power supply voltage signal line ELVDD can provide a positive power supply voltage signal to the first control transistor T5 and the capacitor PC2. The first terminal of the data writing transistor T2 can be connected to the data signal line Vdata, and the data signal line Vdata can provide a data signal to the data writing transistor T2. The second terminal of the data writing transistor T2, the second terminal of the first control transistor T5, and the first terminal of the driving transistor T1 can be interconnected. The second terminal of the driving transistor T1, the first terminal of the threshold compensation transistor T3, and the first terminal of the second control transistor T6 can be interconnected. The first terminal of the first reset transistor T4 can be connected to the first reset signal line VREFN1, and the first reset signal line VREFN1 can provide a first reset signal to the first reset transistor T4. The second terminal of threshold compensation transistor T3, the control terminal of driving transistor T1, and the second terminal of first reset transistor T4 can be interconnected with the first plate PC2a of capacitor PC2. The first terminal of second reset transistor T7 can be connected to the second reset signal line VREFN2, which provides a second reset signal to second reset transistor T7. The second terminal of second reset transistor T7 and the second terminal of second control transistor T6 can be interconnected with the first electrode 910 of light-emitting device 900. The second electrode 930 of light-emitting device 900 can be connected to the second power supply voltage signal line ELVSS (e.g., a negative power supply voltage signal line). The control terminal of second control transistor T6 can be connected to the control terminal of first control transistor T5, and both the control terminals of second control transistor T6 and first control transistor T5 can be connected to the light emission control signal line EM. The control terminal of first reset transistor T4 can be connected to the first scan signal line S1, the control terminal of data writing transistor T2 can be connected to the second scan signal line S2, and the control terminal of threshold compensation transistor T3 can be connected to the third scan signal line S3. The control terminal of the second reset transistor T7 can be connected to the fourth scan signal line S4.

[0032] Optionally, in any of the foregoing embodiments, one of the first and second terminals of transistor PC1 may refer to the source of transistor PC1, and the other may refer to the drain of transistor PC1. The control terminal of transistor PC1 may refer to the gate PC1a of transistor PC1. Optionally, the semiconductor 310 material of transistor PC1 in any of the foregoing embodiments may be N-type or P-type, and this application does not limit it.

[0033] Optionally, the first region A1 can be used as a non-display area of ​​the display panel 10. For example, the first region A1 of the display panel 10 can be used as a functional area of ​​the display panel 10. The light transmittance of the first region A1 can be greater than that of the second region A2. When the display panel 10 is applied to a display device, a light-sensing component for sensing light in the display device can be correspondingly disposed under the first region A1. The light-sensing component can better sense light through the first region A1. The light-sensing component can include at least one of the following components capable of sensing light: a distance sensor, a camera, an under-display fingerprint recognition module, an infrared light-emitting diode (IR-LED) proximity sensor, etc.

[0034] Optionally, the display panel 10 also includes a functional hole FH formed in the first region A1, so that when a photosensitive component is correspondingly provided in the first region A1, the photosensitive component can better sense light through the functional hole FH.

[0035] The display panel 10 also includes a first functional layer 200, an active layer 300, and a first metal layer 400. The first functional layer 200 is disposed on one side of the substrate 100, and the active layer 300 is disposed on the side of the first functional layer 200 away from the substrate 100. The active layer 300 may be located at least in the second region A2. The first metal layer 400 is disposed on the side of the active layer 300 away from the substrate 100. The first metal layer 400 includes a second metal structure 402 located in the second region A2. The second metal structure 402 and the active layer 300 can be used to participate in the formation of the circuit structure in the second region A2.

[0036] Optionally, the active layer 300 may include the semiconductor 310 of the transistor PC1 described in the foregoing embodiments. The second metal structure 402 may include at least one of the gate PC1a of the transistor PC1, the first plate PC2a of the capacitor PC2, and the second plate PC2b of the capacitor PC2 described in the foregoing embodiments.

[0037] Optionally, the display panel 10 further includes multiple insulating layers, including a first insulating layer IL1, a second insulating layer IL2 and a third insulating layer IL3. The first insulating layer IL1 is disposed between the first functional layer 200 and the active layer 300, the second insulating layer IL2 is disposed between the active layer 300 and the first metal layer 400, and the third insulating layer IL3 is disposed on the side of the first metal layer 400 facing away from the substrate 100.

[0038] Optionally, the insulating layer may be made of inorganic materials, making it difficult for moisture to diffuse through the insulating layer.

[0039] Optionally, the display panel 10 may further include a second metal layer 500 disposed on the side of the first metal layer 400 away from the substrate 100, and the second metal layer 500 may include the source and drain of the transistor PC1 described in the foregoing embodiments.

[0040] Optionally, the display panel 10 may also include a planarization layer 700 disposed on the side of the second metal layer 500 away from the substrate 100. The material of the planarization layer 700 may include an organic material, so that the planarization layer 700 can play a better planarization role. The light-emitting device 900 and the pixel definition layer 800 may be disposed on the side of the planarization layer 700 away from the substrate 100.

[0041] Optionally, the display panel 10 may further include a third metal layer 600 disposed on the side of the second metal layer 500 facing away from the substrate 100, and the light-emitting device 900 may be connected to the pixel circuit PC through at least a portion of the third metal layer 600. For example, the planarization layer 700 may include a first planarization layer 710 and a second planarization layer 720 disposed on the side of the first planarization layer 710 facing away from the substrate 100, and the third metal layer 600 may be located between the first planarization layer 710 and the second planarization layer 720.

[0042] Optionally, the display panel 10 includes a plurality of isolation structures SS disposed on the side of the first metal layer 400 away from the substrate 100. A first recessed structure SSc may be present between two adjacent isolation structures SS, so that when there is a film material that is easily invaded by moisture (such as the material of the light-emitting functional layer 920 and the material of the second electrode 930 extending into the first region A1) above the isolation structure SS, the film material that is easily invaded by moisture can fall into the first recessed structure SSc, thereby helping to extend the moisture invasion path.

[0043] Optionally, the first recessed structure SSc can be formed by the gap between two adjacent isolation structures SS.

[0044] Optionally, the isolation structure SS is located within the first region A1. The isolation structure SS includes an isolation portion SS1 and a blocking portion SS2. When there is a film material on top of the isolation structure SS in the first region A1 that is easily penetrated by water vapor, the blocking portion SS2 can effectively shield and isolate the film material that is easily penetrated by water vapor in the first region A1. This helps to reduce the uniformity and continuity of the thickness of the film material that is easily penetrated by water vapor in the first region A1 (for example, under the shielding and isolation effect of the blocking portion SS2, the material of the light-emitting functional layer 920 and the film material of the second electrode 930 are easily separated at the blocking portion SS2; or, under the shielding and isolation effect of the blocking portion SS2, the material of the light-emitting functional layer 920 covering the sidewall of the blocking portion SS2 and the film material of the second electrode 930 have a thinner thickness), making it difficult for water vapor to penetrate into the second region A2 along these materials.

[0045] For example, the blocking portion SS2 protrudes from the isolation portion SS1 in a direction parallel to the plane of the substrate 100.

[0046] Optionally, the blocking portion SS2 may be located on the side of the isolation portion SS1 away from the substrate 100.

[0047] Optionally, the planarization layer 700 may be spaced apart from the isolation structure SS, making it difficult for moisture to penetrate into the second region A2 along the isolation structure SS. For example, the planarization layer 700 may be located only within the second region A2.

[0048] Optionally, the isolation portion SS1 can be disposed in the same layer and with the same material as the first planarization layer 710, so that during the manufacturing process of the display panel 10, the material of the first planarization layer 710 can be patterned to simultaneously form the first planarization layer 710 and the isolation portion SS1, thereby improving the manufacturing efficiency of the display panel 10.

[0049] Optionally, the blocking part SS2 can be set in the same layer and material as the third metal layer 600, so that the blocking part SS2 can have high structural strength and is not easy to collapse, while also helping to improve the manufacturing efficiency of the display panel 10.

[0050] Optionally, the pixel definition layer 800 may be spaced apart from the isolation structure SS, making it difficult for moisture to penetrate into the second region A2 along the pixel definition layer 800. For example, the pixel definition layer 800 may be located only within the second region A2.

[0051] Optionally, the isolation structure SS can be arranged around the functional hole FH to prevent water vapor from easily invading into the second region A2 from the functional hole FH.

[0052] For example, the orthographic projection of the isolation structure SS onto the substrate 100 may be ring-shaped.

[0053] Optionally, the display panel 10 may include multiple isolation structures SS, which can be nested together. That is, in two adjacent isolation structures SS, the isolation structure SS closer to the functional hole FH can be surrounded by the isolation structure SS away from the functional hole FH, thereby further restricting the intrusion of water vapor into the second region A2.

[0054] The first metal layer 400 includes a first metal structure 401 located in the first region A1. The first metal structure 401 can be used to influence the structural morphology in the first region A1, thereby helping to limit the intrusion of water vapor into the second region A2.

[0055] For example, the orthographic projection of the first functional structure 210 on the substrate 100 at least partially overlaps with the orthographic projection of at least one isolation structure SS on the substrate 100, so that the first functional structure 210 can effectively elevate the upper isolation structure SS, thereby improving the shielding and blocking effect of the isolation structure SS on the material in the second region A2 that is more easily invaded by water vapor.

[0056] Optionally, the first metal structure 401 can be arranged around the functional hole FH, so that the annular first metal structure 401 can play a better role in raising the annular isolation structure SS as a whole.

[0057] Optionally, the first metal structure 401 and the second metal structure 402 are spaced apart, so that the first metal structure 401 can have a smaller size, which is beneficial for the first metal structure 401 to play a better role in raising the isolation structure SS more independently and accurately.

[0058] Optionally, the display panel 10 may include only one first metal layer 400 (not shown in the figure); or, the display panel 10 may include at least two first metal layers 400. For example, the first metal layer 400 includes a first metal sublayer 410 and a second metal sublayer 420 located on the side of the first metal sublayer 410 facing away from the substrate 100. Optionally, the insulating layer may further include a fourth insulating layer IL4, which may be located between the first metal sublayer 410 and the second metal sublayer 420.

[0059] Optionally, the first metal sublayer 410 includes a first metal substructure 411 located within the first region A1, and the second metal sublayer 420 includes a second metal substructure 421 located within the first region A1. The second metal substructure 421 may be located on the side of the first metal substructure 411 facing away from the substrate 100, thereby effectively elevating the upper isolation structure SS. The first metal structure 401 may include the first metal substructure 411 and the second metal substructure 421.

[0060] Optionally, the orthographic projection of the second metal substructure 421 on the substrate 100 may be located within the orthographic projection of the first metal substructure 411 on the substrate 100, so that the stacked first metal substructure 411 and second metal substructure 421 can provide a relatively stable and good support for the isolation structure SS.

[0061] Optionally, the first metal sublayer 410 may further include a third metal substructure 412 located within the second region A2, and the second metal sublayer 420 may further include a fourth metal substructure 422 located within the second region A2. The third metal substructure 412 may include the gate PC1a of the transistor PC1 and the first electrode PC2a of the capacitor PC2 described in the foregoing embodiments, and the fourth metal substructure 422 may include the second electrode PC2b of the capacitor PC2. The second metal structure 402 may include the third metal substructure 412 and the fourth metal substructure 422.

[0062] The first functional layer 200 includes a first functional structure 210 located in the first region A1 and a second functional structure 220 located in the second region A2. The orthographic projection of the second functional structure 220 on the substrate 100 and the orthographic projection of the second metal structure 402 on the substrate 100 overlap at least partially, so that the second functional structure 220 can be used to discharge the moving charge below the second metal structure 402, making it less likely for the circuit structure in the second region A2 to accumulate and generate an electric field, which is beneficial to reducing the current hysteresis phenomenon in the second region A2.

[0063] Optionally, the orthographic projection of the gate PC1a of at least one transistor PC1 in the pixel circuit PC onto the substrate 100 lies within the orthographic projection of the second functional structure 220 onto the substrate 100; and / or, the orthographic projection of at least one capacitor PC2 in the pixel circuit PC onto the substrate 100 lies within the orthographic projection of the second functional structure 220 onto the substrate 100.

[0064] For example, the pixel circuit PC may include a plurality of amorphous silicon transistors and / or a plurality of low-temperature polycrystalline silicon transistors, wherein the orthogonal projection of the gate PC1a of at least one amorphous silicon transistor and / or low-temperature polycrystalline silicon transistor in the pixel circuit PC onto the substrate 100 lies within the orthogonal projection of the second functional structure 220 onto the substrate 100.

[0065] Optionally, the orthographic projection of the second functional structure 220 on the substrate 100 may at least partially overlap with the orthographic projection of the semiconductor 310 on the substrate 100, such that the second functional structure 220 can be used to vent moving charges below the semiconductor 310 and / or the second functional structure 220 can serve to shield the semiconductor 310 from light.

[0066] The first functional structure 210 located in the first region A1 can be used to provide electrostatic protection, making it difficult for static electricity to be transmitted from the first region A1 to the second region A2.

[0067] Optionally, the orthogonal projection of the gate PC1a of at least one transistor PC1 in the pixel circuit PC onto the substrate 100 may be located outside the orthogonal projection of the second functional structure 220 onto the substrate 100.

[0068] For example, such as Figure 4 As shown, the pixel circuit PC may include a plurality of oxide transistors PC11, and the orthogonal projection of the gate PC1a of at least one oxide transistor PC11 in the pixel circuit PC onto the substrate 100 is at least partially located outside the orthogonal projection of the second functional structure 220 onto the substrate 100 (for example, the orthogonal projection of the gate PC1a of at least one oxide transistor PC11 in the pixel circuit PC onto the substrate 100 may not overlap with or only partially overlap with the orthogonal projection of the second functional structure 220 onto the substrate 100).

[0069] Optionally, the pixel circuit PC may simultaneously include an amorphous silicon transistor, a low-temperature polycrystalline silicon transistor, and an oxide transistor PC11. The semiconductor 310 of the oxide transistor PC11 may be disposed on a different layer from the semiconductor 310 of the amorphous silicon transistor and the low-temperature polycrystalline silicon transistor. For example, the active layer 300 may include the semiconductor 310 of the amorphous silicon transistor and the low-temperature polycrystalline silicon transistor, the second metal structure 402 may include the gate PC1a of the amorphous silicon transistor and the low-temperature polycrystalline silicon transistor, and the multilayer insulating layer may further include a fifth insulating layer IL5 and a sixth insulating layer IL6. The fifth insulating layer IL5 may be disposed on the side of the third insulating layer IL3 facing away from the substrate 100, and the sixth insulating layer IL6 may be disposed on the side of the fifth insulating layer IL5 facing away from the substrate 100. The semiconductor 310 of the oxide transistor PC11 may be located between the third insulating layer IL3 and the fifth insulating layer IL5, and the gate PC1a of the oxide transistor PC11 may be located between the fifth insulating layer IL5 and the sixth insulating layer IL6.

[0070] Optionally, the orthogonal projection of the gate PC1a of the driving transistor T1 onto the substrate 100 lies within the orthogonal projection of the second functional structure 220 onto the substrate 100 (for example, the driving transistor T1 may be an amorphous silicon transistor or a low-temperature polycrystalline silicon transistor); or, the driving transistor T1 may be an oxide transistor PC11.

[0071] Optionally, the display panel 10 may also include a second functional layer FS, which may include a fourth functional structure FS1. The orthographic projection of the gate PC1a of at least one oxide transistor PC11 in the pixel circuit PC onto the substrate 100 is located within the orthographic projection of the fourth functional structure FS1 onto the substrate 100. The fourth functional structure FS1 can be used to discharge the moving charge below the oxide transistor PC11, so that the circuit structure in the second region A2 is less likely to accumulate and generate an electric field, which is beneficial to reduce the current hysteresis phenomenon in the second region A2.

[0072] Optionally, the second functional layer FS may be located between the third insulating layer IL3 and the fourth insulating layer IL4.

[0073] Optionally, the material of the first functional layer 200 may include a conductive material (e.g., a conductive metal material), so that the first functional structure 210 can better limit and shield static electricity, and the second functional structure 220 can better guide the moving charge in the second region A2.

[0074] For example, the material of the first functional layer 200 includes at least one of molybdenum, silicon, and titanium.

[0075] Optionally, the first functional structure 210 is arranged around the functional hole FH, so that the first functional structure 210 can be in a relatively continuous ring shape, thereby making it difficult for static electricity to invade into the second region A2 along the edge of the functional hole FH.

[0076] By setting the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the first metal structure 401 on the substrate 100 at intervals, when static electricity accumulates in the first functional structure 210, the static electricity in the first functional structure 210 is less likely to affect the first metal structure 401. As a result, static electricity is less likely to be conducted to the second region A2 through the first metal structure 401 and the film layer above it, thereby improving the electrostatic protection capability of the display panel 10.

[0077] For example, by setting the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the first metal structure 401 on the substrate 100 to be spaced apart, static electricity is not easily conducted to the second electrode 930 through the first metal structure 401 and the isolation structure SS, and static electricity is not easily conducted to the second region A2 through the second electrode 930, thereby improving the electrostatic protection capability of the display panel 10.

[0078] Optionally, the first functional structure 210 and the second functional structure 220 are spaced apart, so that when static electricity accumulates in the first functional structure 210, the static electricity in the first functional structure 210 is not easy to invade into the second region A2 through the second functional structure 220, thereby better protecting the circuit structure in the second region A2.

[0079] In some embodiments of this application, there are various ways to set the positional relationship between the first functional structure 210 and the isolation structure SS. The relative positional relationship between the first functional structure 210 and the isolation structure SS can be set according to the purpose of limiting the propagation of static electricity in the first region A1.

[0080] Optionally, the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of at least one isolation structure SS on the substrate 100 are spaced apart, so that the first functional structure 210 is not likely to have an excessively large size in the first region A1, which is beneficial to reducing the propagation of static electricity in the first region A1.

[0081] Optionally, the orthographic projection of the first functional structure 210 on the substrate 100 may at least partially overlap with the orthographic projection of at least one isolation structure SS on the substrate 100, so that under the shielding and raising effect of the isolation structure SS, the second electrode 930 and the first functional structure 210 are less likely to have too small a gap, thereby helping to reduce the influence of static electricity on the second electrode 930, making it less likely for static electricity to be conducted to the second region A2 through the second electrode 930.

[0082] Optionally, when the display panel 10 includes multiple isolation structures SS, the orthographic projection of the first functional structure 210 on the substrate 100 can be configured to at least partially overlap with the orthographic projection of at least one isolation structure SS on the substrate 100, and when the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of at least one isolation structure SS on the substrate 100 are spaced apart, the first functional structure 210 can be configured to overlap only with a portion of the isolation structures SS in the first region A1, and not overlap with another portion of the isolation structures SS in the first region A1.

[0083] For example, the plurality of isolation structures SS include a first type of isolation structure SSa, wherein the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the first type of isolation structure SSa on the substrate 100 at least partially overlap, such that under the shielding and raising effect of the first type of isolation structure SSa, the second electrode 930 and the first functional structure 210 are not likely to have an excessively small gap, and the first functional structure 210 can be used to raise the first type of isolation structure SSa. The isolation structure SS includes a second type of isolation structure SSb, wherein the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the second type of isolation structure SSb on the substrate 100 are spaced apart (i.e., the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the second type of isolation structure SSb on the substrate 100 do not overlap).

[0084] Optionally, the first metal structure 401 may not be provided between the first type of isolation structure SSa and the substrate 100. That is, the orthographic projection of the first metal structure 401 on the substrate 100 and the orthographic projection of the first type of isolation structure SSa on the substrate 100 may be provided alternately, which is beneficial to realize that the orthographic projection of the first functional structure 210 on the substrate 100 and the orthographic projection of the first metal structure 401 on the substrate 100 are spaced apart.

[0085] Optionally, the orthographic projection of the first metal structure 401 on the substrate 100 and the orthographic projection of the second type of isolation structure SSb on the substrate 100 overlap at least partially, so that the first metal structure 401 can play a better role in raising the second type of isolation structure SSb.

[0086] In some embodiments of this application, there are various ways to set the connection relationship between the first type of isolation structure SSa and the first functional structure 210.

[0087] As an example, the first type of isolation structure SSa can be connected to the first functional structure 210; or, the first type of isolation structure SSa can be spaced apart from the first functional structure 210.

[0088] In some optional embodiments, the first type of isolation structure SSa further includes a conductive material layer SS3 disposed on the side of the isolation portion SS1 facing the substrate 100. The conductive material layer SS3 of the first type of isolation structure SSa is in contact with the first functional structure 210, so that the conductive material layer SS3 of the first type of isolation structure SSa can also play an electrostatic protection role. Since the connected conductive material layer SS3 and the first functional structure 210 can have a large size in the third direction Z, it is beneficial to improve the overall electrostatic protection effect of the display panel 10, making it difficult for static electricity to propagate from the gap between the first insulating layer IL1 and the third insulating layer IL3 into the second region A2.

[0089] For example, the first insulating layer IL1, the second insulating layer IL2, and the third insulating layer IL3 have a through-hole TH1. The conductive material layer SS3 is connected to the first functional structure 210 through the through-hole TH1. The orthographic projection of the first through-hole TH1 on the substrate 100 lies within the orthographic projection of the first type of isolation structure SSa on the substrate 100. In a further example, the first through-hole TH1 may also penetrate the fourth insulating layer IL4.

[0090] Optionally, the conductive material layer SS3 is connected to the first functional structure 210 through the first connecting hole TH1. This can mean that a portion of the conductive material layer SS3 is located within the first connecting hole TH1 and connected to the first functional structure 210.

[0091] Optionally, the first connecting hole TH1 may be arranged around the functional hole FH, that is, the first connecting hole TH1 may be annular. The conductive material layer SS3 may be arranged around the functional hole FH, that is, the conductive material layer SS3 may be annular.

[0092] In these optional embodiments, since the insulating layer is made of an inorganic material, cracks are prone to form in the insulating layer at the functional hole FH during the fabrication process of the display panel 10 (e.g., during the fabrication process of cutting to form the functional hole FH). Therefore, by providing the first connecting hole TH1 and the conductive material layer SS3, during the fabrication process of the display panel 10, both the first connecting hole TH1 penetrating the insulating layer and the conductive material layer SS3 located within the first connecting hole TH1 can effectively limit the extension of cracks in the insulating layer at the functional hole FH into the second region A2, thereby improving the fabrication yield and structural stability of the display panel 10.

[0093] Optionally, the conductive material layer SS3 includes a first conductive portion SS31 that contacts the first functional structure 210 and a second conductive portion SS32 that covers the sidewall of the first connecting hole TH1.

[0094] For example, the first connecting hole TH1 includes a first bottom wall TH1a and a first side wall TH1b connected to the side of the first bottom wall away from the substrate 100, and the conductive material layer SS3 of the first type of isolation structure SSa includes a first conductive portion SS31 covering the first bottom wall TH1a and a second conductive portion SS32 covering the first side wall TH1b.

[0095] Optionally, the first bottom wall TH1a may be the surface of the first functional structure 210 facing away from the substrate 100.

[0096] Optionally, a second recessed structure SS3a may be formed on the upper surface of the conductive material layer SS3 (i.e. the surface of the conductive material layer SS3 facing away from the substrate 100), and the material of the isolation portion SS1 may partially fill the second recessed structure SS3a.

[0097] For example, the second recessed structure SS3a may be formed by the first conductive portion SS31 and the second conductive portion SS32.

[0098] Optionally, the conductive material layer SS3 may also include a third conductive portion SS33 located outside the first connecting hole TH1, the third conductive portion SS33 may cover the surface of the third insulating layer IL3 facing away from the substrate 100.

[0099] Optionally, the thickness of the first conductive portion SS31 is greater than the thickness of the second conductive portion SS32. By setting the thickness of the first conductive portion SS31 to be greater than the thickness of the second conductive portion SS32, the first conductive portion SS31 and the first functional structure 210 can have a smaller resistance, which is beneficial for the conduction of static electricity.

[0100] Figure 6 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Optionally, Figure 6 Can be Figure 1 Another partial sectional view at position BB in the middle.

[0101] Optional, such as Figure 6 As shown, the first conductive portion SS31 has a first curved surface SS31a on the side away from the substrate 100, and the first curved surface SS31a protrudes in a direction away from the substrate 100; and / or, the thickness of the first conductive portion SS31 gradually decreases in a direction parallel to the plane of the substrate 100 and pointing from the first conductive portion SS31 to the second conductive portion SS32.

[0102] By reasonably setting the shape of the first conductive portion SS31, it is beneficial to increase the thickness of the first conductive portion SS31, so that the first conductive portion SS31 can have a lower resistance, thereby improving the electrostatic protection capability of the first conductive portion SS31.

[0103] Figure 7 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Optionally, Figure 7 Can be Figure 1 Another partial sectional view at position BB in the middle.

[0104] like Figure 7 As shown, optionally, a single first connecting hole TH1 includes at least two connecting sub-holes TH11 arranged in a direction perpendicular to the plane of the substrate 100. In two adjacent connecting sub-holes TH11, the area of ​​the orthogonal projection of the connecting sub-hole TH11 closer to the substrate 100 on the substrate 100 is smaller than the area of ​​the orthogonal projection of the connecting sub-hole TH11 farther from the substrate 100 on the substrate 100, and the orthogonal projection of the connecting sub-hole TH11 closer to the substrate 100 on the substrate 100 is located within the orthogonal projection of the connecting sub-hole TH11 farther from the substrate 100 on the substrate 100.

[0105] In this optional embodiment, by setting the first connecting hole TH1 as a stepped hole, it is beneficial to reduce the steepness of the first sidewall TH1b of the first connecting hole TH1 as a whole, which facilitates the formation of a second conductive portion SS32 with a relatively uniform thickness during the preparation of the display panel 10, thereby facilitating the conduction of static electricity in the conductive material layer SS3 of the first type of isolation structure SSa.

[0106] Optionally, different connecting sub-holes TH11 may penetrate different insulating layers. For example, a single first connecting hole TH1 may include two connecting sub-holes TH11, wherein, in two adjacent connecting sub-holes TH11, the connecting sub-hole TH11 closer to the substrate 100 may penetrate the first insulating layer IL1, and the connecting sub-hole TH11 farther from the substrate 100 may penetrate the second insulating layer IL2, the third insulating layer IL3, and the fourth insulating layer IL4; or, in two adjacent connecting sub-holes TH11, the connecting sub-hole TH11 closer to the substrate 100 may penetrate the first insulating layer IL1 and the second insulating layer IL2, and the connecting sub-hole TH11 farther from the substrate 100 may penetrate the third insulating layer IL3 and the fourth insulating layer IL4; or, in two adjacent connecting sub-holes TH11, the connecting sub-hole TH11 closer to the substrate 100 may penetrate the first insulating layer IL1, the second insulating layer IL2, and the fourth insulating layer IL4, and the connecting sub-hole TH11 farther from the substrate 100 may penetrate the third insulating layer IL3.

[0107] In some embodiments of this application, the width of the conductive material layer SS3 and the first functional structure 210 can be set in various ways. The width of the conductive material layer SS3 and the first functional structure 210 can be set according to the limitation of the effect of static electricity on other device structures in the display panel 10.

[0108] Optionally, the orthographic projection of the conductive material layer SS3 of the first type of isolation structure SSa onto the substrate 100 is located within the orthographic projection of the isolation portion SS1 onto the substrate 100, so that the isolation portion SS1 can better cover the conductive material layer SS3, so that when static electricity accumulates in the conductive material layer SS3, the static electricity is less likely to have an excessive impact on the light-emitting functional layer 920 and the second electrode 930.

[0109] Optionally, the orthographic projection of the first functional structure 210 on the substrate 100 may be located within the orthographic projection of the first type of isolation structure SSa on the substrate 100, so that the first functional structure 210 may not have an excessively large size in the first region A1, which is beneficial to reducing the propagation of static electricity in the first region A1.

[0110] For example, the orthographic projection of the first functional structure 210 on the substrate 100 is located within the orthographic projection of the isolation portion SS1 on the substrate 100.

[0111] In some optional embodiments, the second type of isolation structure SSb further includes a conductive material layer SS3 disposed on the side of the isolation portion SS1 facing the substrate 100. The conductive material layer SS3 of the second type of isolation structure SSb can effectively elevate the blocking portion SS2 in the second type of isolation structure SSb, so that the second type of isolation structure SSb can effectively shield and block the upper film material.

[0112] Optionally, the conductive material layer SS3 of the second type of isolation structure SSb is insulated from the first functional structure 210, so that when static electricity accumulates inside the first functional structure 210, the static electricity is not easily propagated through the conductive material layer SS3 of the second type of isolation structure SSb within the first region A1.

[0113] Optionally, the conductive material layer SS3 of the second type of isolation structure SSb can be spaced apart from the first type of isolation structure SSa, so that the conductive material layer SS3 of the second type of isolation structure SSb is not too close to the first type of isolation structure SSa. As a result, when static electricity accumulates in the conductive material layer SS3 of the first type of isolation structure SSa, the static electricity is not easy to propagate through the conductive material layer SS3 of the second type of isolation structure SSb in the first region A1.

[0114] Optionally, the isolation part SS1 of the second type of isolation structure SSb has a second connecting hole TH2, and the blocking part SS2 is connected to the conductive material layer SS3 through the second connecting hole TH2.

[0115] In this optional embodiment, when both the blocking part SS2 and the conductive material layer SS3 are made of metallic materials, and the insulating part SS1 is made of organic materials, the blocking part SS2 can have a better adhesion effect to the conductive material layer SS3 than the adhesion effect between the blocking part SS2 and the insulating part SS1. Therefore, by setting the blocking part SS2 to be connected to the conductive material layer SS3 through the second connecting hole TH2, the blocking part SS2 is less likely to fall off from the insulating part SS1 under the adhesion of the conductive material layer SS3, thereby making the blocking part SS2 have better structural stability.

[0116] Optionally, there are multiple ways to set the width of the conductive material layer SS3 in the second type of isolation structure SSb. The width of the conductive material layer SS3 in the second type of isolation structure SSb can be set according to the purpose of improving the structural stability of the blocking part SS2 and the shielding and blocking effect on the upper film material.

[0117] Optionally, the third insulating layer IL3 forms a protrusion structure IL31 on the side of the first metal structure 401 opposite to the substrate 100, and the second type of isolation structure SSb covers the top surface and at least part of the side surface of the protrusion structure IL31.

[0118] For example, the protrusion structure IL31 has a second top surface IL3a on the side near the second type of isolation structure SSb, and the protrusion structure IL31 also has a second side surface IL3b connected to the side of the second top surface IL3a near the substrate 100, and the second type of isolation structure SSb covers the second top surface IL3a and at least part of the second side surface IL3b.

[0119] In a further example, the conductive material layer SS3 of the second type of isolation structure SSb covers at least part of the second side IL3b, so that the conductive material layer SS3 can provide a certain elevation effect on the blocking part SS2 above the second side IL3b, making the blocking part SS2 less prone to collapse.

[0120] Optionally, the orthographic projection of the blocking portion SS2 on the substrate 100 may at least partially overlap with the orthographic projection of the second side IL3b on the substrate 100.

[0121] Optionally, the orthographic projection of the first metal structure 401 on the substrate 100 is located within the orthographic projection of the conductive material layer SS3 of the second type of isolation structure SSb on the substrate 100, so that the single first metal structure 401 is not likely to have an excessively large width, which is beneficial to increasing the step difference between the isolation structure SS and the third insulating layer IL3, and thus beneficial to improving the shielding and blocking effect of the second type of isolation structure SSb.

[0122] For example, the orthographic projection of the first metal substructure 411 on the substrate 100 lies within the orthographic projection of the conductive material layer SS3 of the second type of isolation structure SSb on the substrate 100; and / or, the orthographic projection of the second metal substructure 421 on the substrate 100 lies within the orthographic projection of the conductive material layer SS3 of the second type of isolation structure SSb on the substrate 100.

[0123] Optionally, the blocking portion SS2 protrudes from the conductive material layer SS3 in a direction parallel to the plane of the substrate 100.

[0124] In some optional embodiments, the isolation structure SS may include an isolation portion SS1, a blocking portion SS2, and a raised portion SS4 stacked together, the raised portion SS4 being used to limit the overflow of some materials during the fabrication of the display panel 10.

[0125] For example, the blocking portion SS2 may be located on the side of the isolation portion SS1 away from the substrate 100, and the padding portion SS4 may be located on the side of the blocking portion SS2 away from the substrate 100.

[0126] Optionally, the first type of isolation structure SSa may include an isolation portion SS1, a blocking portion SS2, and a raised portion SS4 stacked together. Optionally, the second type of isolation structure SSb may include an isolation portion SS1, a blocking portion SS2, and a raised portion SS4 stacked together.

[0127] Optionally, the blocking portion SS2 protrudes from the padding portion SS4 in a direction parallel to the plane of the substrate 100.

[0128] Optionally, in the isolation structure SS, the blocking part SS2 covers part of the surface of the isolation part SS1, and the surface of the isolation part SS1 not covered by the blocking part SS2 contacts the raised part SS4. The raised part SS4 and the isolation part SS1 can have a better contact effect, which is beneficial to improving the structural stability of the isolation structure SS.

[0129] Figure 8 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Optionally, Figure 8 Can be Figure 1 Another partial sectional view at position AA.

[0130] Optional, such as Figure 8 As shown, the display panel 10 may further include an encapsulation layer SL disposed on the side of the light-emitting device 900 facing away from the substrate 100. The encapsulation layer SL can effectively encapsulate the light-emitting device 900. For example, the encapsulation layer SL may be an encapsulation layer SL based on thin film encapsulation (TFE) technology. In the direction away from the substrate 100, the encapsulation layer SL may include a first encapsulation layer SL1, a second encapsulation layer SL2, and a third encapsulation layer SL3 stacked sequentially. The materials of the first encapsulation layer SL1 and the third encapsulation layer SL3 may include inorganic materials. The first encapsulation layer SL1 can effectively limit the influence of moisture on the light-emitting device 900. The first encapsulation layer SL1 can be prepared by chemical vapor deposition (CVD). The material of the second encapsulation layer SL2 may include organic materials, making it easier to prepare a thicker second encapsulation layer SL2, thereby improving the encapsulation effect of the second encapsulation layer SL2 and its flatness. The second encapsulation layer SL2 can be prepared by inkjet printing (IJP) technology.

[0131] Figure 9 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Optionally, Figure 9 Can be Figure 1 Another partial sectional view at position BB in the middle.

[0132] Optional, please refer to Figure 8 and Figure 9 As shown, the second encapsulation layer SL2 may be partially located in the first region A1, and the raised portion SS4 may be used to limit the overflow of material of the second encapsulation layer SL2 during the manufacturing process of the display panel 10.

[0133] Optionally, the first encapsulation layer SL1 and the third encapsulation layer SL3 may also be partially located within the first region A1, which helps to extend the overall encapsulation path of the encapsulation layer.

[0134] Optionally, the display panel 10 also includes a barrier structure BS disposed on the side of the isolation structure SS away from the substrate 100. The barrier structure BS can also be used to limit the overflow of some materials during the fabrication process of the display panel 10.

[0135] For example, the display panel 10 further includes a barrier structure BS disposed on the side of the first type of isolation structure SSa facing away from the substrate 100; and / or, the display panel 10 further includes a barrier structure BS disposed on the side of the second type of isolation structure SSb facing away from the substrate 100.

[0136] Optionally, the barrier structure BS can be disposed above the isolation structure SS that is closer to the second region A2. For example, when the second type of isolation structure SSb is located on the side of the first type of isolation structure SSa that is closer to the second region A2, the barrier structure BS can be located only on the side of the second type of isolation structure SSb that is away from the substrate 100, and the barrier structure BS may not be disposed above the first type of isolation structure SSa.

[0137] Optionally, the relative positional relationship between the second encapsulation layer SL2 and each isolation structure SS may depend on the blocking effect of each isolation structure and barrier structure BS on the material of the second encapsulation layer SL2. For example, when the blocking effect of each isolation structure SS and barrier structure BS on the material of the second encapsulation layer SL2 is good, the second encapsulation layer SL2 may only be located above the portion of the isolation structures SS closer to the second region A2. In a further example, when the second type of isolation structure SSb is located on the side of the first type of isolation structure SSa closer to the second region A2, the second encapsulation layer SL2 may not extend to the side of the first type of isolation structure SSa away from the substrate 100.

[0138] Optionally, the barrier structure BS can be set in the same layer and material as some of the film layers in the second region A2, which is beneficial to improving the manufacturing efficiency of the display panel 10.

[0139] For example, please refer to Figure 8 and Figure 9 The display panel 10 may further include a support pillar SPC located within the second region A2 and disposed on the side of the pixel definition layer 800 facing away from the substrate 100. The support pillar SPC can be used to support the mask. The blocking structure BS may be disposed in the same layer and with the same material as at least one of the support pillar and the pixel definition layer 800. In a further example, the blocking structure BS may include a first blocking layer BS1 and a second blocking layer BS2 located on the side of the first blocking layer BS1 facing away from the substrate 100. The first blocking layer BS1 may be disposed in the same layer and with the same material as the pixel definition layer 800, and the second blocking layer BS2 may be disposed in the same layer and with the same material as the support pillar SPC.

[0140] In some embodiments of this application, the protrusion direction of the blocking part SS2 in the isolation structure SS relative to the isolation part SS1, the raised part SS4 and the conductive material layer SS3 can be arranged in various ways. The protrusion direction of the blocking part SS2 in each isolation structure SS at different positions can be set according to the requirements for blocking water vapor.

[0141] As an example, the blocking portion SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in a direction away from the second region A2 (e.g.) Figure 9 As shown, Figure 9 (The direction on the right is the direction closer to the second region A2); or, the blocking part SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in the direction closer to the second region A2; or, a part of the blocking part SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in the direction away from the second region A2, and another part of the blocking part SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in the direction closer to the second region A2.

[0142] As an example, the blocking portion SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2; or, the blocking portion SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2; or, a portion of the blocking portion SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2, and another portion of the blocking portion SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2 (e.g.) Figure 9 (As shown).

[0143] Optionally, the isolation portion SS1 has a first top surface SS1a on the side facing away from the substrate 100. The isolation portion SS1 also has a first side surface SS1b connected to the first top surface SS1a on the side close to the substrate 100. The raised portion SS4 of the first type of isolation structure SSa covers at least part of the first side surface SS1b, so that the raised portion SS4 can be used to increase the distance between the film material of the light-emitting functional layer 920 and the second electrode 930 on the periphery of the first side surface SS1b and the conductive material layer SS3 and the first functional structure 210 corresponding to the first type of isolation structure SSa. This makes it less likely that the static electricity in the conductive material layer SS3 and the first functional structure 210 corresponding to the first type of isolation structure SSa will affect the film material of the light-emitting functional layer 920 and the second electrode 930 on the periphery of the first side surface SS1b.

[0144] Optionally, since the blocking portion SS2 is provided on one edge of the first type of isolation structure SSa, the film materials of the light-emitting functional layer 920 and the second electrode 930 can be effectively blocked and isolated under the shielding effect of the blocking portion SS2. This allows the film materials of the light-emitting functional layer 920 and the second electrode 930 to have a greater distance from the first side surface SS1b on the side where the blocking portion SS2 is provided, while the film materials of the light-emitting functional layer 920 and the second electrode 930 can easily cover the edge of the first type of isolation structure SSa where the blocking portion SS2 is not provided. Therefore, when the blocking portion SS2 in the first type of isolation structure SSa protrudes to one side only relative to the conductive material layer SS3, the raised portion SS4 of the first type of isolation structure SSa can cover at least a portion of the first side surface SS1b on the side where the blocking portion SS2 does not protrude, thereby effectively increasing the distance between the film materials of the light-emitting functional layer 920 and the second electrode 930 and the corresponding conductive material layer SS3 and the first functional structure 210 of the first type of isolation structure SSa.

[0145] For example, when the blocking portion SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in a direction away from the second region A2, the raised portion SS4 of the first type of isolation structure SSa can cover the first side SS1b of the first type of isolation structure SSa on the side closer to the second region A2; when the blocking portion SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in a direction closer to the second region A2, the raised portion SS4 of the first type of isolation structure SSa can cover the first side SS1b of the first type of isolation structure SSa on the side away from the second region A2.

[0146] In some embodiments of this application, there are various ways to set the number of the first type of isolation structure SSa and the second type of isolation structure SSb.

[0147] Optionally, the display panel 10 may include only one first-class isolation structure SSa, making it difficult for static electricity in the second region A2 to propagate to a large extent.

[0148] Figure 10 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Figure 10 In the image, to better illustrate the morphology of the isolation structure SS, some of the other film layers above the isolation structure SS have been omitted. Optional, Figure 10 Can be Figure 1 A partial sectional view at position BB in the middle.

[0149] Optional, such as Figure 10 As shown, the display panel 10 may include at least two second-type isolation structures SSb, which helps to reduce the continuity and thickness uniformity of the film material located above the isolation structure in the second region A2, which is susceptible to moisture intrusion.

[0150] Optionally, the blocking portions SS2 of at least two second-type isolation structures SSb protrude in different directions, so that different second-type isolation structures SSb can meet different moisture blocking requirements. For example, at least one second-type isolation structure's blocking portion SS2 protrudes from the conductive material layer SS3 in a direction away from the second region A2; and / or, at least one second-type isolation structure SSb's blocking portion SS2 protrudes from the conductive material layer SS3 in a direction close to the second region A2; and / or, at least one portion of the blocking portion SS2 of at least one second-type isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2, and another portion of the blocking portion SS2 of the second-type isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2.

[0151] Optionally, in each of the second type of isolation structures SSb, at least two of the second type of isolation structures SSb may have different widths. Specifically, in the second type of isolation structure SSb with a wider width, a portion of the blocking part SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2, and another portion of the blocking part SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2; in the second type of isolation structure SSb with a narrower width, the blocking part SS2 in the second type of isolation structure SSb may only protrude to one side relative to the conductive material layer SS3 (for example, the blocking part SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2; or, the blocking part SS2 of the second type of isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2).

[0152] Optionally, there are various ways to set the number of blocking parts SS2 in the second type of isolation structure SSb. The second type of isolation structure SSb may include at least one blocking part SS2.

[0153] As an example, a single second-type isolation structure SSb may include a blocking portion SS2, wherein the blocking portion SS2 of the second-type isolation structure SSb protrudes from the conductive material layer SS3 in a direction away from the second region A2; or, the blocking portion SS2 of the second-type isolation structure SSb protrudes from the conductive material layer SS3 in a direction close to the second region A2.

[0154] As an example, a single Class II isolation structure SSb includes at least two spaced-apart blocking portions SS2 (such as...). Figure 10In the middle, the first second type isolation structure SSb and the fourth second type isolation structure SSb from left to right are shown. One of the blocking parts SS2 is provided to protrude from the conductive material layer SS3 in a direction away from the second region A2, and the other blocking part SS2 is provided to protrude from the conductive material layer SS3 in a direction close to the second region A2.

[0155] In this example, by setting the two blocking parts SS2 with different protrusion directions in the second type of isolation structure SSb to be spaced apart, water vapor and static electricity are not easily transmitted between the two blocking parts SS2 in the same second type of isolation structure SSb, which helps to limit the transmission of water vapor and static electricity into the second region A2.

[0156] Optionally, when a single second-class isolation structure SSb includes a conductive material layer SS3 and a barrier portion SS2 (e.g.) Figure 10 In the middle, the second and third second-type isolation structures SSb and the fourth second-type isolation structure SSb from left to right are shown. The orthographic projection of the conductive material layer SS3 and the blocking part SS2 in a single second-type isolation structure SSb onto the substrate 100 at least partially overlaps with the orthographic projection of the same first metal structure 401 onto the substrate 100.

[0157] Optionally, when a single second-class isolation structure SSb includes at least two spaced-apart blocking portions SS2 (e.g.) Figure 10 In the middle, from left to right, the first second-class isolation structure SSb and the fourth second-class isolation structure SSb are shown. There are multiple ways to set the number of first metal structures 401 below a single second-class isolation structure SSb.

[0158] As an example, when a single second-class isolation structure SSb includes a conductive material layer SS3 and at least two spaced-apart blocking portions SS2 (e.g.) Figure 10In the diagram, the first second-type isolation structure SSb from left to right is shown. The orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of the same first metal structure 401 onto the substrate 100 (for example, the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of the same first metal substructure 411 onto the substrate 100; the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of the same first metal substructure 411 onto the substrate 100). The orthographic projections of the metal substructure 421 on the substrate 100 at least partially overlap, and the orthographic projections of the respective blocking portions SS2 in the same second type of isolation structure SSb on the substrate 100 can at least partially overlap with the orthographic projections of the same conductive material layer SS3 on the substrate 100 (for example, the respective blocking portions SS2 in the same second type of isolation structure SSb can be connected to the same conductive material layer SS3), so that a single first metal structure 401 and a single conductive material layer SS3 can simultaneously provide a better lifting effect for at least two blocking portions SS2 in the same second type of isolation structure SSb.

[0159] As an example, when a single second-class isolation structure SSb includes at least two spaced-apart conductive material layers SS3 and at least two spaced-apart blocking portions SS2 (e.g.) Figure 10In the diagram, the fourth second-type isolation structure SSb from left to right is shown. The orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of different first metal structures 401 onto the substrate 100 (for example, the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of different first metal substructures 411 onto the substrate 100; the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of different second metal substructures 421 onto the substrate 100), and the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100 can at least partially overlap with the orthographic projections of different conductive material layers SS3 onto the substrate 100 (for example, the orthographic projections of each blocking portion SS2 in the same second-type isolation structure SSb onto the substrate 100). Each blocking part SS2 in the structure SSb can be connected to a different conductive material layer SS3. That is, at least two first metal structures 401 arranged in the same layer can be provided below a single second type of isolation structure SSb. Different first metal structures 401 can effectively raise different blocking parts SS2 in the same second type of isolation structure SSb, and different conductive material layers SS3 can effectively raise different blocking parts SS2 in the same second type of isolation structure SSb. This helps to reduce the width of a single first metal structure 401 and a single conductive material layer SS3, making it difficult for water vapor and static electricity to be transmitted between the first metal structures 401 below the same second type of isolation structure SSb, and also making it difficult for water vapor and static electricity to be transmitted between the two conductive material layers SS3 in the same second type of isolation structure SSb. This helps to limit the propagation of water vapor and static electricity in the second region A2.

[0160] Optionally, there are several ways to set the relative positional relationship between the barrier structure BS and the second type of isolation structure SSb.

[0161] As an example, when a single second-type isolation structure SSb includes at least two spaced-apart blocking portions SS2, the orthographic projection of the single blocking structure BS onto the substrate 100 at least partially overlaps with the orthographic projections of the at least two blocking portions SS2 in the same second-type isolation structure SSb onto the substrate 100 (e.g., Figure 10 In the diagram, the first and fourth second-class isolation structures SSb from left to right are shown. This allows the barrier structure BS above the relatively wide second-class isolation structure SSb to also have a relatively wide width, which in turn helps the isolation structure SSb and the barrier structure BS to effectively limit the overflow of the upper membrane material.

[0162] Optionally, the orthographic projection of a single barrier structure BS on the substrate 100 lies within the orthographic projection of a single second-type isolation structure SSb on the substrate 100, making it difficult for the width of the barrier structure BS to be too wide. This makes it less likely that the arrangement of the barrier structure BS will flatten the step difference between the isolation structure SS and the third insulating layer IL3, which is beneficial for the isolation structure SS and the barrier structure BS to work together to better limit the overflow of the upper film material.

[0163] In some embodiments of this application, the positions of the first type of isolation structure SSa and the second type of isolation structure SSb can be arranged in various ways.

[0164] In some alternative embodiments, such as Figure 10 As shown ( Figure 10 The right direction in the middle is the direction closer to the second region A2, and the left direction can be the direction closer to the functional hole FH). Each second type of isolation structure SSb in the display panel 10 can be located on the side of the first type of isolation structure SSa that is closer to the second region A2.

[0165] For example, the first type of isolation structure SSa can be the isolation structure SS with the largest distance from the second region A2.

[0166] For example, the first type of isolation structure SSa can be the isolation structure with the smallest distance from the functional hole FH.

[0167] Optionally, the blocking portion SS2 of the first type of isolation structure SSa protrudes from the conductive material layer SS3 in a direction away from the second region A2, so that the first type of isolation structure SSa can be used to block the membrane material between the functional hole FH and the first type of isolation structure SSa, thereby helping to limit the intrusion of water vapor from the functional hole FH into the second region A2.

[0168] Optionally, the distance between the first type of isolation structure SSa and the functional pore FH is not less than 25 μm and not more than 45 μm, so that the distance between the first type of isolation structure SSa and the functional pore FH is not too large. This is beneficial to reduce the width of the first region A1, and also to prevent the first type of isolation structure SSa from getting too close to the functional pore FH. This is beneficial to the first type of isolation structure SSa blocking the membrane material between the functional pore FH and the first type of isolation structure SSa, thereby helping to limit the intrusion of water vapor into the second region A2.

[0169] For example, the spacing between the first type of isolation structure SSa and the functional hole FH can be 25μm, 30μm, 35μm, 40μm or 45μm.

[0170] Optionally, the distance between the surface of the first type of isolation structure SSa on the side facing away from the substrate 100 and the substrate 100 is not less than 3 μm and not more than 4 μm.

[0171] Optionally, the protrusion length of the blocking part SS2 of the first type of isolation structure SS relative to the isolation part SS1 may be no less than 0.4 μm and no more than 0.6 μm.

[0172] Optionally, the distance between the surface of the second type of isolation structure SSb facing away from the substrate 100 and the substrate 100 is not less than 3 μm and not more than 4 μm.

[0173] Optionally, the protrusion length of the blocking portion SS2 of the second type of isolation structure SSb relative to the isolation portion SS1 may be no less than 0.4 μm and no more than 0.6 μm.

[0174] In these alternative embodiments, by arranging the first type of isolation structure SSa closer to the functional hole FH, the static electricity at the functional hole FH is less likely to affect other structures in the second region A2 other than the first type of isolation structure SSa and the first functional structure 210, thereby helping to limit the propagation of static electricity into the second region A2.

[0175] Figure 11 This application also includes a partial cross-sectional view of a display panel 10 provided in one embodiment. Optionally, Figure 11 Can be Figure 1 A partial sectional view at position BB in the middle.

[0176] In some alternative embodiments, such as Figure 11 As shown ( Figure 11 The right direction in the middle is the direction closer to the second region A2, and the left direction can be the direction closer to the functional hole FH). At least two second type isolation structures SSb in the display panel 10 can be respectively disposed on both sides of the first type isolation structure SSa, that is, at least one second type isolation structure SSb can be disposed on the side of the first type isolation structure SS closer to the second region A2, and at least one second type isolation structure SSb can be disposed on the side of the first type isolation structure SSa away from the second region A2.

[0177] Optional, such as Figure 11 As shown, the first type of isolation structure SSa is the isolation structure with the maximum width when projected onto the substrate 100 in the isolation structure SS. This allows the conductive material layer SS3 in the first type of isolation structure SSa to have a larger width, which is beneficial to increasing the connection area between the conductive material layer SS3 and the first functional structure 210, and improving the electrostatic protection capability between the conductive material layer SS3 and the first functional structure 210.

[0178] For example, the width of the orthographic projection of the first type of isolation structure SSa can be greater than the width of the orthographic projection of the second type of isolation structure SSb.

[0179] Figure 12 This application also includes a partial cross-sectional view of a display panel 10 provided in one embodiment. Optionally, Figure 12 Can be Figure 1 A partial sectional view at position BB in the middle.

[0180] Optionally, the display panel 10 also includes a first cover layer FL1 disposed on the side of the isolation structure SS away from the substrate 100. The first cover layer FL1 located on the side of the first type of isolation structure SSa away from the substrate 100 has a hollow structure FL1a, so that during the manufacturing process of the display panel 10, the gas under the first cover layer FL1 can be discharged to the outside through the hollow structure FL1a.

[0181] For example, the material of the first cover layer FL1 may include inorganic materials, and may include the first encapsulation layer SL1 and the third encapsulation layer SL3 described in the foregoing embodiments.

[0182] Optionally, the surface of the first conductive portion SS31 facing away from the substrate 100 is parallel to the plane of the substrate 100, so that the first conductive portion SS31 can have better flatness, which is beneficial to the preparation of a relatively flat film layer above the first conductive material layer SS3.

[0183] Figure 13 This application also includes a partial cross-sectional view of a display panel 10 provided in one embodiment. Optionally, Figure 13 Can be Figure 1 Another partial sectional view at position AA in the middle.

[0184] In some optional embodiments, the display panel 10 may further include a touch electrode TP, which may be located at least within the second region A2, and the touch electrode TP may be used to implement the touch function of the display panel 10.

[0185] Optionally, the touch electrode TP can be disposed on the side of the light-emitting device 900 facing away from the substrate 100. For example, the touch electrode TP can be disposed between adjacent encapsulation layers SL (e.g., the touch electrode TP can be disposed between the first encapsulation layer SL1 and the second encapsulation layer SL2; or, the touch electrode TP can be disposed between the second encapsulation layer SL2 and the third encapsulation layer SL3); or, the touch electrode TP can be disposed on the side of the encapsulation layer SL facing away from the substrate 100 (e.g., the touch electrode TP can be disposed on the side of the third encapsulation layer SL3 facing away from the substrate 100).

[0186] Figure 14This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application. Optionally, Figure 14 Can be Figure 1 A partial sectional view at position BB in the middle.

[0187] Optionally, the touch electrode TP may also be partially located within the first region A1, thereby improving the arrangement size of the touch electrode TP and reducing its resistance. For example, a portion of the touch electrode TP is disposed on the side of the isolation structure SS facing away from the substrate 100.

[0188] Optionally, when the first type of isolation structure SSa is the isolation structure SS with the largest width in its orthogonal projection on the substrate 100, the orthogonal projection of the first type of isolation structure SSa on the substrate 100 can be set to at least partially overlap with the orthogonal projection of the touch electrode TP on the substrate 100, so that the touch electrode TP can have a larger arrangement size, which is beneficial to improving the working performance of the touch electrode TP.

[0189] Optionally, the display panel 10 includes a plurality of touch electrodes TP and a plurality of isolation structures SS, wherein the edge of at least one touch electrode TP is located in the gap between adjacent isolation structures SS, such that the isolation structures SS can restrict moisture from entering the second region A2 through the edge of the touch electrode TP.

[0190] Figure 15 This is a schematic diagram of the structure of a display panel 10 provided in another embodiment of this application.

[0191] like Figure 15 As shown, in some optional embodiments, the display panel 10 also has a third region A3 disposed around the second region A2.

[0192] For example, the third region A3 includes a first sub-region A31, a second sub-region A32, a third sub-region A33, and a fourth sub-region A34. The first sub-region A31 and the second sub-region A32 are respectively located on both sides of the second region A2 in the first direction X, and the third sub-region A33 and the fourth sub-region A34 are respectively located on both sides of the second region A2 in the second direction Y. The distance between the third sub-region A33 and the first region A1 is smaller than the distance between the fourth sub-region A34 and the first region A1. The fourth sub-region A34 can be the lower border area of ​​the display panel 10, that is, the fourth sub-region A34 can be the area in the display panel 10 where fan-out lines are arranged.

[0193] In these alternative embodiments, the third region A3 can serve as a non-display area of ​​the display panel 10; for example, the third region A3 can serve as a border area of ​​the display panel 10.

[0194] Figure 16This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application.

[0195] Optionally, the display panel 10 also includes a dam structure DAM disposed on the side of the first metal layer 400 away from the substrate 100. The dam structure DAM is located in the third region A3 and can be used to limit the overflow of some materials (e.g., the second encapsulation layer SL2) during the fabrication of the display panel 10.

[0196] Optionally, the dam structure DAM can be set with the same layer and material as some of the film layers in the second region A2, which is beneficial to improving the manufacturing efficiency of the display panel 10.

[0197] For example, please refer to Figure 16 The barrier structure BS can be disposed in the same layer and with the same material as at least one of the planarization layer 700, the support pillar SPC, and the pixel definition layer 800. In a further example, the dam structure DAM can include a first dam layer DAM1, a second dam layer DAM2 located on the side of the first dam layer DAM1 facing away from the substrate 100, and a third dam layer DAM3 located on the side of the second dam layer DAM2 facing away from the substrate 100. The first dam layer DAM1 can be disposed in the same layer and with the same material as the second planarization layer 720, the second dam layer DAM2 can be disposed in the same layer and with the same material as the pixel definition layer 800, and the third dam layer DAM3 can be disposed in the same layer and with the same material as the support pillar SPC.

[0198] Optionally, the surface of the first type of isolation structure SSa facing away from the substrate 100 has a first gap with the substrate 100, and the surface of the dam structure DAM facing away from the substrate 100 has a second gap with the substrate 100, and the ratio between the first gap and the second gap is 0.43-0.8.

[0199] For example, the first spacing may be no less than 3μm and no more than 4μm, and the second spacing may be no less than 5μm and no more than 7μm.

[0200] Figure 17 This is a partial cross-sectional view of a display panel 10 provided in another embodiment of this application.

[0201] like Figure 17 As shown, in some alternative embodiments, the display panel includes a gate in panel (GIP) circuit located at least partially within the third region A3.

[0202] Optionally, the gate drive circuit GIP may also include transistor PC1 and capacitor PC2.

[0203] Optionally, the first functional layer 200 further includes a third functional structure 230 located within the third region A3, wherein the gate drive circuit GIP may also include a plurality of transistors PC1, and the orthogonal projection of the gate PC1a of at least one transistor PC1 in the gate drive circuit GIP onto the substrate 100 is located within the orthogonal projection of the third functional structure 230 onto the substrate 100; and / or, the orthogonal projection of at least one capacitor PC2 in the gate drive circuit GIP onto the substrate 100 is located within the orthogonal projection of the third functional structure 230 onto the substrate 100.

[0204] By setting a third functional structure 230 in the third region A3, the third functional structure 230 can be used to export the moving charge below the gate drive circuit GIP, making it less likely for the circuit structure in the third region A3 to accumulate and generate an electric field, which helps to reduce the current hysteresis phenomenon in the third region A3.

[0205] Optionally, the gate drive circuit GIP may include a plurality of amorphous silicon transistors and / or a plurality of low-temperature polycrystalline silicon transistors, wherein the orthogonal projection of the gate PC1a of at least one amorphous silicon transistor and / or low-temperature polycrystalline silicon transistor in the gate drive circuit GIP onto the substrate 100 lies within the orthogonal projection of the third functional structure 230 onto the substrate 100.

[0206] Optionally, the gate drive circuit GIP may include a plurality of oxide transistors PC11, wherein the orthographic projection of the gate PC1a of at least one oxide transistor PC11 in the gate drive circuit GIP onto the substrate 100 is at least partially located outside the orthographic projection of the third functional structure 230 onto the substrate 100 (e.g., the orthographic projection of the gate PC1a of at least one oxide transistor PC11 in the gate drive circuit GIP onto the substrate 100 may not overlap with or only partially overlap with the orthographic projection of the third functional structure 230 onto the substrate 100).

[0207] Optionally, the second functional layer FS may include a fifth functional structure FS2, wherein the orthographic projection of the gate PC1a of at least one oxide transistor PC11 in the gate drive circuit GIP onto the substrate 100 is located within the orthographic projection of the fifth functional structure FS2 onto the substrate 100. The fifth functional structure FS2 can be used to discharge the moving charge below the oxide transistor PC11, making it less likely for the circuit structure in the third region A3 to accumulate and generate an electric field, which is beneficial to reducing the current hysteresis phenomenon in the third region A3.

[0208] Optionally, the gate PC1a of at least one transistor PC1 in the gate drive circuit GIP is connected to the third functional structure 230, so that the third functional structure 230 can be used to transmit gate signals, thereby helping to reduce the transmission resistance of the gate signal. In addition, by setting the gate PC1a of at least one transistor PC1 in the gate drive circuit GIP to be connected to the third functional structure 230, at least one transistor PC1 in the gate drive circuit GIP can also be made into a dual-gate structure, that is, the third functional structure 230 and the original gate PC1a of transistor PC1 can control the current flow in semiconductor 310 from both sides of semiconductor 310 of transistor PC1.

[0209] Optionally, the third functional structure 230 may be spaced apart from the second functional structure 220; or, the third functional structure 230 may be connected to the second functional structure 220, so that the third functional structure 230 and the second functional structure 220 together can conduct the moving charge.

[0210] For example, a third functional structure 230 that is not connected to the device structure in the gate drive circuit GIP may be connected to the second functional structure 220; a third functional structure 230 that is connected to the device structure in the gate drive circuit GIP may be spaced apart from the second functional structure 220.

[0211] An embodiment of the second aspect of this application provides a display device, which includes the display panel 10 of any of the above embodiments. Since the display device provided by the second aspect of this application includes the display panel 10 of any of the first aspects, it has the beneficial effects of the display panel 10 of any of the first aspects, which will not be repeated here.

[0212] The display devices in this application include, but are not limited to, mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, control consoles, and other devices with display functions.

[0213] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0214] The embodiments described above are merely illustrative of several implementations of the present invention, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of the present invention, and these all fall within the protection scope of the present invention. Therefore, the protection scope of this invention patent should be determined by the appended claims.

Claims

1. A display panel, characterized in that, The display panel has a first region and a second region surrounding the first region, the display panel comprising: Substrate; A first functional layer is disposed on one side of the substrate and includes a first functional structure located in the first region and a second functional structure located in the second region. An active layer is disposed on the side of the first functional layer opposite to the substrate; A first metal layer is disposed on the side of the active layer away from the substrate, and the first metal layer includes a first metal structure located in the first region and a second metal structure located in the second region; Wherein, the orthographic projection of the first functional structure on the substrate and the orthographic projection of the first metal structure on the substrate are spaced apart, and the orthographic projection of the second functional structure on the substrate and the orthographic projection of the second metal structure on the substrate at least partially overlap.

2. The display panel according to claim 1, characterized in that, The first metal structure and the second metal structure are spaced apart. And / or, the first functional structure and the second functional structure are spaced apart.

3. The display panel according to claim 1, characterized in that, The display panel includes a plurality of isolation structures disposed on the side of the first metal layer facing away from the substrate, with a first recess structure between adjacent isolation structures; the isolation structures are located in the first region, and each isolation structure includes an isolation portion, a blocking portion, and a raised portion disposed in layers. The orthographic projection of the first functional structure onto the substrate at least partially overlaps with the orthographic projection of at least one of the isolation structures onto the substrate; And / or, the orthographic projection of the first functional structure on the substrate is spaced apart from the orthographic projection of at least one of the isolation structures on the substrate.

4. The display panel according to claim 3, characterized in that, In the isolation structure, the blocking part covers a portion of the surface of the isolation part, and the surface of the isolation part not covered by the blocking part contacts the raised part.

5. The display panel according to claim 3, characterized in that, The plurality of isolation structures includes a first type of isolation structure, wherein the orthographic projection of the first functional structure on the substrate at least partially overlaps with the orthographic projection of the first type of isolation structure on the substrate. The first type of isolation structure further includes a conductive material layer disposed on the side of the isolation portion facing the substrate, wherein the conductive material layer of the first type is in contact with the first functional structure.

6. The display panel according to claim 5, characterized in that, The orthographic projection of the conductive material layer of the first type of isolation structure onto the substrate lies within the orthographic projection of the isolation portion onto the substrate; And / or, the orthographic projection of the first metal structure on the substrate is spaced apart from the orthographic projection of the first type of isolation structure on the substrate.

7. The display panel according to claim 5, characterized in that, The display panel further includes multiple insulating layers, including a first insulating layer, a second insulating layer, and a third insulating layer. The first insulating layer is disposed between the first functional layer and the active layer, the second insulating layer is disposed between the active layer and the first metal layer, and the third insulating layer is disposed on the side of the first metal layer facing away from the substrate. The first insulating layer, the second insulating layer, and the third insulating layer are provided with a through first connecting hole. The conductive material layer is connected to the first functional structure through the first connecting hole. The orthographic projection of the first connecting hole on the substrate is located within the orthographic projection of the first type of isolation structure on the substrate.

8. The display panel according to claim 7, characterized in that, The conductive material layer includes a first conductive portion that contacts the first functional structure and a second conductive portion that covers the sidewall of the first connecting hole. Wherein, a second recessed structure is formed on the upper surface of the conductive material layer, and the material portion of the isolation portion is filled in the second recessed structure; And / or, the first conductive portion has a first curved surface on the side away from the substrate, the first curved surface protruding in a direction away from the substrate.

9. The display panel according to claim 7, characterized in that, Each of the first connecting holes includes at least two connecting sub-holes arranged in a direction perpendicular to the plane of the substrate. In two adjacent connecting sub-holes, the area of ​​the orthographic projection of the connecting sub-hole closer to the substrate on the substrate is smaller than the area of ​​the orthographic projection of the connecting sub-hole farther from the substrate on the substrate, and the orthographic projection of the connecting sub-hole closer to the substrate on the substrate is located within the orthographic projection of the connecting sub-hole farther from the substrate on the substrate.

10. The display panel according to claim 5, characterized in that, The display panel includes multiple isolation structures, and the first type of isolation structure is the isolation structure with the largest distance from the second region.

11. The display panel according to claim 6, characterized in that, The blocking portion of the first type of isolation structure protrudes from the isolation portion and / or the raised portion in a direction away from the second region.

12. The display panel according to claim 5, characterized in that, The first type of isolation structure is the isolation structure whose orthogonal projection on the substrate has the maximum width.

13. The display panel according to claim 12, characterized in that, The display panel further includes a first cover layer disposed on the side of the isolation structure away from the substrate, and the first cover layer located on the side of the first type of isolation structure away from the substrate has a hollow structure.

14. The display panel according to claim 13, characterized in that, The display panel also includes touch electrodes, some of which are disposed on the side of the isolation structure away from the substrate, wherein the orthographic projection of the first type of isolation structure on the substrate and the orthographic projection of the touch electrodes on the substrate at least partially overlap; And / or, the display panel includes a plurality of the touch electrodes and a plurality of isolation structures, wherein the edge of at least one of the touch electrodes is located in the gap between adjacent isolation structures.

15. The display panel according to claim 5, characterized in that, The display panel further includes a third region surrounding the second region, and the display panel also includes a dam structure disposed on the side of the first metal layer opposite to the substrate, the dam structure being located within the third region. The first type of isolation structure has a first gap between its surface facing away from the substrate and the substrate, and the dam structure has a second gap between its surface facing away from the substrate and the substrate, and the ratio between the first gap and the second gap is 0.43-0.

8.

16. The display panel according to claim 3, characterized in that, The isolation structure includes a second type of isolation structure, wherein the orthographic projection of the first functional structure on the substrate and the orthographic projection of the second type of isolation structure on the substrate are spaced apart. The second type of isolation structure further includes a conductive material layer disposed on the side of the isolation portion facing the substrate, and the blocking portion contacts the conductive material layer through a second through hole.

17. The display panel according to claim 16, characterized in that, The orthographic projection of the first metal structure onto the substrate and the orthographic projection of the second type of isolation structure onto the substrate at least partially overlap.

18. The display panel according to claim 17, characterized in that, The orthographic projection of the first metal structure onto the substrate lies within the orthographic projection of the conductive material layer of the second type of isolation structure onto the substrate.

19. The display panel according to claim 18, characterized in that, The first metal layer includes a first metal sublayer and a second metal sublayer located on the side of the first metal sublayer facing away from the substrate. The first metal sublayer includes a first metal substructure located within the first region, and the second metal sublayer includes a second metal substructure located within the first region. Wherein, the orthographic projection of the first metal substructure onto the substrate lies within the orthographic projection of the conductive material layer of the second type of isolation structure onto the substrate; And / or, the orthographic projection of the second metal substructure onto the substrate lies within the orthographic projection of the conductive material layer of the second type of isolation structure onto the substrate.

20. The display panel according to claim 18, characterized in that, The display panel further includes a third insulating layer, wherein the third insulating layer forms a raised structure on the side of the first metal structure opposite to the substrate, and the second type of isolation structure covers the top surface and at least part of the side surface of the raised structure.

21. The display panel according to claim 16, characterized in that, The second type of isolation structure includes at least one blocking part, wherein: A single second type of isolation structure includes a blocking portion that protrudes from the conductive material layer in a direction away from the second region, or the blocking portion of the second type of isolation structure protrudes from the conductive material layer in a direction close to the second region; Alternatively, a single second type of isolation structure may include at least two spaced-apart blocking portions, one of which protrudes from the conductive material layer in a direction away from the second region, and the other of which protrudes from the conductive material layer in a direction close to the second region.

22. The display panel according to claim 16, characterized in that, A single second-type isolation structure includes a conductive material layer and a blocking portion, wherein the orthographic projection of the conductive material layer and the blocking portion on the substrate in a single second-type isolation structure at least partially overlaps with the orthographic projection of the same first metal structure on the substrate; Alternatively, a single second-type isolation structure includes a conductive material layer and at least two spaced-apart blocking portions, wherein the orthographic projection of each of the blocking portions in the same second-type isolation structure onto the substrate at least partially overlaps with the orthographic projection of the same first metal structure onto the substrate, and the orthographic projection of each of the blocking portions in the same second-type isolation structure onto the substrate may at least partially overlap with the orthographic projection of the same conductive material layer onto the substrate; Alternatively, a single second-type isolation structure includes two conductive material layers and two spaced-apart blocking portions, wherein the orthographic projection of each blocking portion in the same second-type isolation structure onto the substrate at least partially overlaps with the orthographic projection of different first metal structures onto the substrate, and the orthographic projection of each blocking portion in the same second-type isolation structure onto the substrate at least partially overlaps with the orthographic projection of different conductive material layers onto the substrate.

23. The display panel according to claim 16, characterized in that, The display panel also includes a barrier structure disposed on the side of the second type of isolation structure opposite to the substrate.

24. The display panel according to claim 23, characterized in that, A single second-type isolation structure includes at least two spaced-apart blocking portions, and the orthographic projection of the single blocking structure on the substrate at least partially overlaps with the orthographic projections of the at least two blocking portions in the same second-type isolation structure on the substrate.

25. The display panel according to claim 1, characterized in that, The display panel includes pixel circuitry located at least partially within the second region. The pixel circuit includes a plurality of transistors, and the orthogonal projection of the gate of at least one of the transistors in the pixel circuit onto the substrate lies within the orthogonal projection of the second functional structure onto the substrate. And / or, the pixel circuit includes a plurality of oxide transistors, wherein the orthogonal projection of the gate of at least one of the oxide transistors in the pixel circuit onto the substrate is at least partially located outside the orthogonal projection of the second functional structure onto the substrate.

26. The display panel according to claim 25, characterized in that, The pixel circuit includes a driving transistor, wherein the orthogonal projection of the gate of the driving transistor on the substrate lies within the orthogonal projection of the second functional structure on the substrate, or the driving transistor is an oxide driving transistor.

27. The display panel according to claim 1, characterized in that, The display panel further includes a third region surrounding the second region, and the display panel includes a gate driving circuit located at least partially within the third region. The first functional layer also includes a third functional structure located within the third region. The gate driving circuit includes a plurality of transistors, wherein the orthogonal projection of the gate of at least one of the transistors in the gate driving circuit onto the substrate is located within the orthogonal projection of the third functional structure onto the substrate; And / or, the gate driving circuit includes at least one oxide transistor, wherein the orthogonal projection of the gate of at least one oxide transistor in the gate driving circuit onto the substrate is at least partially located outside the orthogonal projection of the third functional structure onto the substrate.

28. The display panel according to claim 27, characterized in that, The gate of at least one of the transistors in the gate drive circuit is connected to the third functional structure.

29. The display panel according to claim 1, characterized in that, The material of the first functional layer includes at least one of molybdenum, silicon, and titanium.

30. The display panel according to any one of claims 1 to 29, characterized in that, The display panel also includes functional holes formed in the first area. The first functional structure is arranged around the functional hole; And / or, the display panel includes an isolation structure disposed on the side of the first metal layer opposite to the substrate, the isolation structure being located in the first region and surrounding the functional hole.

31. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 30.

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