Non-acidic compositions comprising defect reducing agents for copper electroplating

By using a non-acidic electroplating composition containing copper ions, defect reducers, and complexing agents, the problems of voids and corrosion in copper deposition on non-copper metal seeds are solved, achieving void-free, uniform, and smooth copper deposition, especially improving the resistivity of the copper layer in nano- and micro-scale features on cobalt seeds.

CN122295488APending Publication Date: 2026-06-26BASF SE
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BASF SE
Filing Date
2024-11-25
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

Existing technologies struggle to achieve void-free, uniform, and smooth copper deposition on non-copper metal seed crystals, particularly cobalt seed crystals, especially in nanoscale and microscale features, and also suffer from corrosion problems.

Method used

A non-acidic electroplating composition comprising copper ions, a defect reducing agent, a complexing agent, and optionally a buffer or alkali, with the pH adjusted to 6 to 13, is used to deposit copper on a semiconductor substrate by filling recessed features from the bottom up.

Benefits of technology

It achieves virtually void-free, uniform, and smooth copper deposition on non-copper metal seeds, especially cobalt seeds, reducing impurity content and increasing the resistivity of the copper layer, suitable for nanoscale and microscale features.

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Abstract

The present invention provides a composition for depositing copper on a semiconductor substrate, the composition comprising (a) copper ions; (b) a defect reducing agent having formula S1 or S3; (c) a complexing agent; and (d) optionally a buffer or base to adjust the pH to a pH of 6 to 13; wherein R S1 It is (a) H or C1-C4 alkyl; (b) block poly(oxyethylidene-co-C3-C4-oxyalkylene), block poly(C3-C4-oxyalkylene-co-oxyethylidene), or random poly(oxyethylidene-co-C3-C4-oxyalkylene), all having (i) a number-average molecular weight M of 500 to 5000 g / mol. n (ii) an oxyethylidene content of 8% to 98% by weight, or (c) a number-average molecular weight M of 180 g / mol to 3500 g / mol. n Polyoxyethylene; R S2 R S3 R S4 Independently selected from R S1 and R S5 ;R S5 Selected from C1 to C4 alkyl and C1 to C4 alkoxy; X S1 X S2 Independently selected from straight-chain or branched C1 to C4 alkyldiyl, straight-chain or branched C2 to C4 olefinic, straight-chain or branched C2 to C4 alkynyl, and -X S6 -(O-C2H3R S6 ) o -; X S3 It is a straight-chain or branched C1 to C8 alkyldiyl, a straight-chain or branched C2 to C8 olefinicdiyl, a straight-chain or branched C2 to C8 alkynyl, and -X S6 -(O-C2H3R S6 ) o -;R S6 It is H, methyl, or ethyl; X S6 It is methanediyl, ethanediyl, propanediyl, or butanediyl; Y S It is a 5- or 6-membered ring system of divalent aromatic N-heterocyclic rings, consisting of phenylene, naphthylene, or having one or two nitrogen atoms, all of which are unsubstituted or disubstituted with one, two, or three R atoms. S5 Group substitution; Z S It is a monovalent aromatic N-heterocyclic 5- or 6-membered ring system containing 1, 2, or 3 nitrogen atoms, and the monovalent aromatic N-heterocyclic 5- or 6-membered ring system is unsubstituted or occupied by 1, 2, or 3 R atoms. S5 Group substitution; o is an integer from 1 to 6; p and q are independently 0 or 1; wherein the pH of the composition is from 6 to 13.
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