Preparation method of aluminum alloy surface uniform aluminum fluoride layer and application thereof

By forming a nanocrystalline layer on the surface of an aluminum alloy heating plate and growing an aluminum fluoride layer using a fluorine-containing plasma atmosphere, the problems of uniformity and thickness control of the fluoride layer on the surface of the aluminum alloy heating plate are solved, thereby improving its stability and service life in a radio frequency environment.

CN122303784APending Publication Date: 2026-06-30PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
PIOTECH (SHENYANG) SEMICONDUCTOR EQUIPMENT CO LTD
Filing Date
2026-04-27
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

Existing technologies make it difficult to form a uniform aluminum fluoride insulation layer on the surface of aluminum alloy heating plates, leading to the risk of arc discharge and abnormal thickening and peeling of the fluoride layer, which affects the service life of the heating plate and the yield of semiconductor wafer manufacturing.

Method used

A nanocrystalline layer is formed on the surface of an aluminum alloy substrate using ultrasonic nanocrystalline surface modification technology, and an aluminum fluoride layer is grown in situ on the nanocrystalline layer. The nanocrystalline layer and the plastic deformation influence layer are formed on the surface of the aluminum alloy substrate by ultrasonic nanocrystalline surface modification technology. Subsequently, fluorination corrosion is carried out on the nanocrystalline layer using a fluorine-containing plasma atmosphere to form a uniform aluminum fluoride layer.

Benefits of technology

This method achieves controllable thickness and good uniformity of the aluminum fluoride layer, suppresses the risk of arc discharge and peeling of the fluoride layer, and improves the reliability of the heating plate and the yield of semiconductor manufacturing.

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Abstract

This invention discloses a method for preparing a uniform aluminum fluoride layer on an aluminum alloy surface and its application, relating to the field of surface treatment technology. The preparation method employs ultrasonic nanocrystalline surface modification technology to treat the surface of an aluminum alloy substrate, forming a uniform and dense nanocrystalline layer on the surface. Subsequently, an aluminum fluoride layer is grown in situ using a fluorine-containing plasma atmosphere through fluorination etching. The nanocrystalline layer has a high-density and uniformly distributed grain boundary structure, and the modification technology simultaneously forms a plastic deformation influence layer with a high dislocation density beneath the nanocrystalline layer, allowing the fluorination reaction to proceed synchronously and uniformly to the depth throughout the surface, resulting in a uniform and dense fluoride layer. When the aluminum alloy product prepared by this invention is used as a heating plate in a semiconductor thin film deposition equipment, it can provide a stable and uniform temperature field for the wafer under radio frequency conditions, reducing process disturbances caused by local insulation failures and improving the stability of the thin film deposition process and product yield.
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