An atomic deposition apparatus suitable for ion sputtering experiments

Abstract

This application provides an atomic deposition apparatus suitable for ion sputtering experiments, including a sputtering product deposition module, a support and position adjustment module, a tilt adjustment module, and a target fixing and beam signal acquisition module. This application addresses the problem that existing atomic deposition apparatuses primarily measure the atomic deposition rate inside ion thruster discharge chambers or sputtering coating chambers, making it difficult to accurately control ion incident conditions and measure the spatial distribution of sputtering products. The target fixing and beam signal acquisition module is mounted on the tilt adjustment module and located within the sputtering product deposition module. It also utilizes the support and position adjustment module as a base placed at the bottom of the vacuum chamber, supporting and driving the other modules to move horizontally and / or vertically.

Description

Technical Field

[0001] This application belongs to the field of ion sputtering technology, specifically relating to an atomic deposition apparatus suitable for ion sputtering experiments. Background Technology

[0002] When ions with sufficient energy bombard a solid target, atoms or atomic clusters within the target escape from the solid surface; this phenomenon is called sputtering. Experimental research on the sputtering process, clarifying the sputtering yield and sputtering product angular distribution under different operating conditions, is significant for the development of fields such as surface cleaning, sputtering coating, material surface analysis, ion sources, ion engines, and first-wall materials for thermonuclear fusion. Determining the sputtering yield and sputtering product angular distribution requires effective acquisition of the incident ion signal and accurate measurement of the number of sputtered atoms within different spatial solid angle ranges. Furthermore, to study the influence of the ion incident angle on sputtering behavior, the target platform tilt angle must be adjustable. Currently, most atomic deposition devices focus on measuring the atomic deposition rate inside the discharge chamber of an ion thruster or the sputtering coating chamber, making it difficult to accurately control ion incident conditions and measure the spatial distribution of sputtering products. Summary of the Invention

[0003] In view of this, this application provides an atomic deposition apparatus suitable for ion sputtering experiments. By setting a target fixing and beam signal acquisition module mounted on an angle adjustment module and located inside the sputtering product deposition module, and using a support and position adjustment module as a base placed at the bottom of the vacuum chamber to support and drive other modules to move in the horizontal and / or vertical directions, this invention solves the problem that existing atomic deposition apparatuses are mostly designed for measuring the atomic deposition rate inside the ion thruster discharge chamber or sputtering coating chamber, and it is difficult to achieve accurate control of ion incident conditions and measurement of the spatial distribution of sputtering products.

[0004] This application provides an atomic deposition apparatus suitable for ion sputtering experiments. The apparatus includes a sputtering product deposition module, a support and position adjustment module, a tilt adjustment module, and a target fixation and beam signal acquisition module. The support and position adjustment module serves as a base placed at the bottom of a vacuum chamber and supports and drives the sputtering product deposition module, tilt adjustment module, and target fixation and beam signal acquisition module to move horizontally and / or vertically. The sputtering product deposition module is connected to the support and position adjustment module and is used to fix the sample plate for sputtering atomic deposition sampling. The tilt adjustment module is mounted on the support and position adjustment module and is used to adjust the ion incident angle. The target fixation and beam signal acquisition module is assembled on the tilt adjustment module and located within the sputtering product deposition module. The target fixation and beam signal acquisition module is used to fix the sputtering target and acquire the current signal generated by the incident ions.

[0005] In one specific embodiment of this application, the support and position adjustment module includes a translation base plate, a central crossbeam, a direction adjustment structure, two linear guide rails, and a vertical drive structure. The central crossbeam is slidably mounted between the two linear guide rails. The vertical drive structure drives the central crossbeam to move parallel in the vertical direction via the two linear guide rails. The direction adjustment structure is mounted on the central crossbeam and connected to the sputtering product deposition module. The sputtering product deposition module is mounted on the translation base plate of the support and position adjustment module. The translation base plate is connected to the upper slide rail of the central crossbeam via a groove.

[0006] In one specific embodiment of this application, the vertical drive structure includes lifting points, lifting cables, a top pulley, a counterweight, and a guide rail clamp. Lifting points are installed at both ends of the middle crossbeam, and the lifting points are connected to the lifting cables. The lifting cables pass around the top pulley and connect to the counterweight. The guide rail clamp is used to lock the position of the middle crossbeam.

[0007] In one specific embodiment of this application, the counterweight is made of 304 stainless steel.

[0008] In one specific embodiment of this application, the orientation adjustment structure includes a ball joint base, a universal ball joint, and a deposition module base plate. The ball joint base is fixed to the translation base plate by bolts. The universal ball joint is assembled inside the ball joint base and locked using locking bolts. The universal ball joint is also connected to the deposition module base plate. The tilt adjustment module is mounted to the deposition module base plate by bolts.

[0009] In one specific embodiment of this application, the tilt adjustment module includes a tilt adjustment base, a worm gear knob, an insulating plate, and a conductive base plate. The tilt adjustment base is bolted to the deposition module base plate, and the tilt adjustment and position locking are performed using the worm gear knob. The worm gear is fixed to the insulating plate and meshes with the worm gear via gears. The conductive base plate is bolted to the insulating plate, and the target material is installed in the groove of the conductive base plate and tightened using bolts.

[0010] In one specific embodiment of this application, the tilt adjustment module further includes a cable connector. The cable connector is mounted on a conductive base plate. The cable connector is a BNC-type feedthrough connector with an outer insulating shell. The target fixing and beam signal acquisition module uses fixing bolts and recessed grooves to fix the sputtering target and acquires ion current signals through the BNC-type feedthrough connector.

[0011] In one specific embodiment of this application, the sputtering product deposition module includes arc-shaped ribs, sheet metal parts, and annular cover plates. Six arc-shaped ribs are evenly installed at 60° intervals on the base plate of the deposition module. A set of sheet metal parts is fixed on each of the left and right sides of each arc-shaped rib. The sheet metal parts are used to fix the deposition sheet. At the same time, annular cover plates are installed at the top of the arc-shaped ribs to ensure the stability of the arc-shaped ribs. The annular cover plates have a circular opening in the middle, which serves as an ion beam inlet.

[0012] In one specific embodiment of this application, the diameter of the circular opening in the middle of the annular cover is 30 mm.

[0013] In one specific embodiment of this application, the annular cover is a 304 stainless steel piece with an outer diameter of 54mm, an inner diameter of 30mm, and a thickness of 5mm.

[0014] The beneficial effects of this technical solution are as follows: By setting a support and position adjustment module as a base placed at the bottom of the vacuum chamber, and using the support and position adjustment module to drive the sputtering product deposition module to move vertically; the sputtering product deposition module and the support and position adjustment module are slidably connected horizontally, and the target fixing and beam signal acquisition module is assembled on the tilt adjustment module. Both the target fixing and beam signal acquisition module and the tilt adjustment module are located within the sputtering product deposition module, thus adopting a split-modular design to achieve experimental measurement of the sputtering yield and sputtered atomic spatial distribution characteristics of different targets under different ion incident angles. Furthermore, since each component in this atomic deposition device suitable for ion sputtering experiments is modularly designed, it can be handled independently during installation and maintenance, making it easy to operate, simple in structure, and highly reliable. This significantly improves operability and functional expandability while reducing unnecessary waste generation, allowing for experimental characterization of ion sputtering behavior and providing support for process optimization in related processes. Attached Figure Description

[0015] Figure 1 The diagram shown is a schematic representation of an atomic deposition apparatus suitable for ion sputtering experiments according to an embodiment of this application.

[0016] Figure 2 As shown Figure 1 The diagram shows a structural schematic of a support and position adjustment module in an atomic deposition apparatus suitable for ion sputtering experiments.

[0017] Figure 3 As shown Figure 1 The diagram shows a schematic of the orientation adjustment structure in an atomic deposition apparatus suitable for ion sputtering experiments.

[0018] Figure 4 As shown Figure 1 The diagram shows a schematic of the tilt adjustment module and the target fixing and beam signal acquisition module in an atomic deposition apparatus suitable for ion sputtering experiments.

[0019] Figure 5 As shown Figure 1 The diagram shows a schematic of the sputtering product deposition module in an atomic deposition apparatus suitable for ion sputtering experiments.

[0020] In the figure, 1-Sputtering product deposition module; 2-Support and position adjustment module; 3-Transfer base plate; 4-Central crossbeam; 5-Lifting point; 6-Lifting cable; 7-Top pulley; 8-Counterweight block; 9-Guide rail clamp; 10-Direction adjustment structure; 11-Ball groove base; 12-Universal ball joint; 13-Deposition module base plate; 14-Tilting angle adjustment base; 15-Worm gear knob; 16-Insulating plate; 17-Conductive base plate; 18-Target material; 19-Cable junction box; 20-Arc-shaped vertical rib; 21-Sheet metal part; 22-Annular cover plate. Detailed Implementation

[0021] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] At least one embodiment of this application provides an atomic deposition apparatus suitable for ion sputtering experiments, which is used to be integrally installed near the metal ion source outlet in a vacuum chamber.

[0023] like Figure 1 and Figure 2 As shown, the atomic deposition apparatus suitable for ion sputtering experiments includes a sputtering product deposition module 1, a support and position adjustment module 2, a tilt adjustment module, and a target fixing and beam signal acquisition module. The support and position adjustment module 2 serves as a base placed at the bottom of the vacuum chamber, and supports and drives the sputtering product deposition module 1, the tilt adjustment module, and the target fixing and beam signal acquisition module to move horizontally and / or vertically. The sputtering product deposition module 1 and the support and position adjustment module 2 ( Figure 1 A shielding connection is used to fix the sample plate and achieve sputtered atom deposition sampling. The tilt adjustment module is mounted on the support and position adjustment module 2 to adjust the ion incident angle. The target fixing and beam signal acquisition module is assembled on the tilt adjustment module and located within the sputtering product deposition module 1. The target fixing and beam signal acquisition module is used to fix the sputtering target and acquire the current signal generated by the incident ions.

[0024] It should be noted that the support and position adjustment module 2 is used to install and fix the atomic deposition apparatus suitable for ion sputtering experiments within the vacuum chamber. Furthermore, since different flange positions may be used to assemble the ion source during the experiment, the beam position within the vacuum chamber will change accordingly. Therefore, the spatial positions of functional modules such as target fixing and sputtering product deposition can be adjusted within a certain range using the support and position adjustment module 2.

[0025] The target fixation and beam signal acquisition module is located inside the sputtering product deposition module 1, that is, the sputtering product deposition module 1 covers the target fixation and beam signal acquisition module.

[0026] According to the technical solution provided in this application embodiment, a support and position adjustment module 2 is set as a base and placed at the bottom of the vacuum chamber. The support and position adjustment module 2 drives the sputtering product deposition module 1 to move vertically. The sputtering product deposition module 1 and the support and position adjustment module 2 are slidably connected horizontally. The target fixing and beam signal acquisition module is assembled on the tilt adjustment module. Both the target fixing and beam signal acquisition module and the tilt adjustment module are set inside the sputtering product deposition module 1. Thus, a split-type modular design is adopted to realize the experimental measurement of the sputtering yield and sputtered atomic spatial distribution characteristics of different targets under different ion incident angles. In addition, since each component in this atomic deposition device suitable for ion sputtering experiments is modularly designed, it can be handled independently during installation and maintenance. It is easy to operate, has a simple structure, and good reliability. It significantly improves operability and functional expandability while reducing unnecessary waste generation. It can experimentally characterize ion sputtering behavior and provide support for process optimization of related processes.

[0027] In at least one embodiment of this application, the support and position adjustment module 2 includes a translation base plate 3, a central crossbeam 4, a direction adjustment structure 10, two linear guide rails, and a vertical drive structure. The central crossbeam 4 is slidably mounted between the two linear guide rails. The vertical drive structure is used to drive the central crossbeam 4 to move parallel in the vertical direction through the two linear guide rails. The direction adjustment structure 10 is mounted on the central crossbeam 4 and connected to the sputtering product deposition module 1. The sputtering product deposition module 1 is mounted on the translation base plate 3 of the support and position adjustment module 2. The translation base plate 3 is connected to the upper slide rail of the central crossbeam 4 via a sliding groove. Thus, the atomic deposition device suitable for ion sputtering experiments adopts a cage-like structure, which facilitates functional modularization; the translation base plate 3 can be translated on the central crossbeam 4, thereby driving the sputtering product deposition module 1 to move in the horizontal direction.

[0028] In at least one embodiment of this application, reference is made to Figure 2 The vertical drive structure includes lifting points 5, lifting cables 6, top pulleys 7, counterweights 8, and guide rail clamps 9. Lifting points 5 are installed at both ends of the middle crossbeam 4, and the lifting points 5 are connected to the lifting cables 6. The lifting cables 6 pass around the top pulleys 7 and connect to the counterweights 8. The guide rail clamps 9 are used to lock the position of the middle crossbeam 4. Thus, the vertical translation of the middle crossbeam 4 can be achieved by adjusting the counterweights 8 or by directly moving the middle crossbeam 4.

[0029] It should be noted that the central crossbeam 4 is used to support other functional modules such as the sputtering product deposition module 1 and the tilt adjustment module.

[0030] In at least one embodiment of this application, the counterweight 8 is made of 304 stainless steel.

[0031] In at least one embodiment of this application, reference is made to Figure 3 The orientation adjustment structure 10 includes a ball-and-socket base 11, a universal ball joint 12, and a deposition module base plate 13. The ball-and-socket base 11 is fixed to the translation base plate 3 by bolts. The universal ball joint 12 is assembled inside the ball-and-socket base 11 and locked using locking bolts. The universal ball joint 12 is also connected to the deposition module base plate 13. The tilt adjustment module is bolted to the deposition module base plate 13.

[0032] For example, the overall structural dimensions of the support and position adjustment module 2 can be 500mm*600mm, with the main body material being 6061-T6. A double-Z structure ensures overall stability. The bottom of the double-Z structure has elongated mounting holes for installation inside the cavity (the cavity contains no other structures; its internal dimensions are Φ500 mm and height 600 mm). The vertical adjustment range is 400mm. A linear guide rail is used as the guiding mechanism (high-vacuum grease is used for all guide rails), and a guide rail clamp 9 is installed, allowing for manual locking within any adjustment range. A steel wire rope counterweight structure (including a lifting cable 6, a top pulley 7, and a counterweight block 8) is used in the vertical direction. A reasonable counterweight block 8 is selected through precise calculation to facilitate the free vertical lifting of the central crossbeam 4, which houses other functional modules. Simultaneously, the universal ball joint 12 can rotate freely. A 360° rotation structure, combining the universal ball joint 12 and the ball groove base 11, enables 360° free rotation and locking.

[0033] In the above embodiments, the support and position adjustment module 2 is equipped with a counterweight 8, which enables convenient adjustment of the vertical position of the middle crossbeam 4. The guide rail clamp 9 allows its position to be quickly locked, and the universal ball joint 12 and locking bolts allow the other modules to rotate freely and lock their positions.

[0034] In at least one embodiment of this application, reference is made to Figure 4 The tilt adjustment module includes a tilt adjustment base 14, a worm gear knob 15, an insulating plate 16, and a conductive base plate 17. The tilt adjustment base 14 is bolted to the deposition module base plate 13, and the worm gear knob 15 is used for tilt adjustment and position locking. The worm gear is fixed to the insulating plate 16 and meshes with the worm gear via gears. The conductive base plate 17 is bolted to the insulating plate 16, and the target material 18 is installed in the groove of the conductive base plate 17 and tightened with bolts. Thus, the tilt adjustment module uses a worm gear transmission method to achieve arbitrary adjustment of the angle between the axis and the normal within the range of 0~45°, thereby enabling arbitrary adjustment of the target material tilt angle within the range of 0-45°.

[0035] It should be noted that the tilt adjustment module is a component in this atomic deposition apparatus suitable for ion sputtering experiments that enables adjustment of the ion incident angle. The tilt adjustment base 14 can also be called a fixed base. The conductive base plate 17 can also be called a target mounting plate or a target mounting conductive base plate.

[0036] In the above embodiment, the tilt adjustment module is mainly composed of a worm gear, a worm, a tilt adjustment base 14, a worm knob 15, and a conductive base plate 17. By rotating the worm knob 15, the worm is rotated, and the worm gear drives the conductive base plate 17 to rotate by utilizing the cooperation between the worm gear and the worm. This changes the tilt angle of the target fixing and beam signal acquisition module and the sputtering product deposition module 1 installed on it.

[0037] In at least one embodiment of this application, the tilt adjustment module further includes a cable connector 19. The cable connector 19 is mounted on the conductive base plate 17. The cable connector 19 is a BNC (Bayonet Nut Connector) type feedthrough connector with a PEEK (Polyetheretherketone) insulating shell. The target fixing and beam signal acquisition module uses fixing bolts and recessed grooves to fix the sputtering target and acquires ion current signals through the BNC type feedthrough connector. Thus, the target fixing and beam signal acquisition module only needs to connect to the BNC type feedthrough connector via a BNC-J type coaxial signal line to achieve current signal transmission, which is simple and convenient to operate, and is compatible with different target specifications.

[0038] It should be noted that the target fixation and beam signal acquisition module is a component of this atomic deposition apparatus suitable for ion sputtering experiments, used to fix the sputtering target and acquire the current signal generated by the incident ions. The target is mounted in the groove of the conductive base plate 17 using fixing bolts.

[0039] For example, the conductive base plate 17 is made of H65 brass and is compatible with both rectangular (50mm×50mm×5mm) and circular (Φ50mm, 5mm thick) targets. A BNC-type feedthrough connector is mounted on the side of the conductive base plate 17 as a coaxial signal cable connector, allowing the transmission of the ion-generated current signal to an external signal processing and monitoring system via a BNC-J type coaxial signal cable. The lower layer of the conductive base plate 17 is a 6mm thick PEEK insulating board (this insulating board 16 connects to the tilt adjustment module). The BNC-type feedthrough connector is also encased in a PEEK insulating shell. These two insulating components ensure that the current signal is effectively acquired by the BNC-type feedthrough connector.

[0040] In at least one embodiment of this application, reference is made to Figure 5The sputtering product deposition module 1 includes arc-shaped vertical ribs 20, sheet metal parts 21, and annular cover plates 22. Six arc-shaped vertical ribs 20 are evenly installed at 60° intervals on the support and position adjustment module 2 (such as the deposition module base plate 13). A set of sheet metal parts 21 is fixed to each side of each arc-shaped vertical rib 20 for fixing the deposition sheets. Annular cover plates 22 are installed at the top of the arc-shaped vertical ribs 20 to ensure their stability. The annular cover plate 22 has a circular opening in the middle, which serves as the ion beam inlet. Thus, the sputtering product deposition module 1 can achieve partitioned sampling of up to 48 sample sheets, which can be flexibly adjusted according to experimental needs.

[0041] It should be noted that the annular cover plate 22 can also be called an arc-shaped cover plate.

[0042] In at least one embodiment of this application, the diameter of the circular opening in the middle of the annular cover 22 is 30 mm. Thus, the circular opening in the middle of the annular cover 22 can accommodate ion beam inflow with a diameter of 0-30 mm, exhibiting high dimensional tolerance.

[0043] In at least one embodiment of this application, the annular cover 22 is a 304 stainless steel piece with an outer diameter of 54 mm, an inner diameter of 30 mm, and a thickness of 5 mm. Thus, the circular opening in the middle of the annular cover 22 serves as the ion beam inlet, with an inlet diameter of 30 mm.

[0044] The sputtering product deposition module 1 is a component that enables spatially segmented deposition of sputtering products. The mounting base of the sputtering product deposition module 1 (i.e., the deposition module base plate 13) is made of 6061 aluminum plate with a diameter of 250mm and a thickness of 5mm. The deposition plate array fixing structure above the deposition module base plate 13 adopts a hemispherical structure. Six arc-shaped vertical ribs 20 are arranged at a 60° angle between each other. There is a mounting sheet metal part 21 on each side of each arc-shaped vertical rib. The sheet metal part 21 covers tantalum deposition sheets and is fixed to the arc-shaped vertical ribs 20 by mounting bolts, thereby realizing the installation of a total of twelve groups (each group contains 1-4 pieces as needed).

[0045] The following describes a method of using an atomic deposition apparatus suitable for ion sputtering experiments, as described in the above embodiments of this application.

[0046] First, determine the sputtering experimental parameters, including the ion beam state, ion incident angle, target material used, deposition sampling area, and sample naming rules, and perform pre-experiment preparation. The preparation process is as follows: a) Remove all sheet metal parts 21, and use the worm gear knob 15 to adjust the tilt angle of the conductive base plate 17 (that is, the tilt angle of the target plane, the target surface is parallel to the plane of the conductive base plate, and the target is fixed to the conductive plate. Adjusting the tilt angle of 17 is equivalent to adjusting the tilt angle of the target surface) to meet the ion incident angle requirements. After ultrasonic cleaning and drying, place the target material used in this experiment in the groove of the conductive base plate 17 and tighten the 4 fixing bolts. b) Cut the sample pieces into sections and mark them with a marker. Place the sample pieces between the sheet metal part 21 and the arc-shaped vertical rib 20 and fix them with bolts. c) Place the support and position adjustment module 2 inside the vacuum chamber. Position the middle crossbeam 4 perpendicular to the ion beam direction. Install the ball groove base 11 on the middle crossbeam 4 of the support and position adjustment module 2. Use an Allen wrench to loosen the universal joint locking mechanism. Adjust the overall orientation of the sputtering product deposition module 1 so that the top opening (ion beam inlet) is aligned with the ion beam direction. Loosen the guide rail clamp 9 and adjust the height of the middle crossbeam 4. Repeatedly adjust to ensure that the ion beam outlet, the ion beam inlet of the sputtering product deposition module 1, and the target are on the same straight line to ensure normal beam incidence. After confirming that everything is correct, lock the universal ball joint 12 and the guide rail clamp 9. Connect the BNC-J type coaxial signal line to the BNC type feedthrough connector.

[0047] d) Close the vacuum chamber and evacuate the air.

[0048] Afterwards, the status of the signal processing monitoring system (mainly involving high-speed acquisition card and signal processing) is confirmed, the ion source is turned on, the relevant parameters of the ion source are adjusted according to the experimental parameters, ion incidence is carried out, and after accumulating the required ion incidence amount, the ion source is turned off, the experiment is stopped, and the space is exposed.

[0049] Remove the BNC-J type coaxial signal cable, unscrew the four fastening bolts on the ball groove base 11, remove the sputtering product deposition module 1, and remove the sample sheet and target material 18. Samples are taken and sent for testing according to the established numbering rules. The sample sheet is dissolved for ICP-OES analysis. The amount of sputtered atoms is measured using spectroscopy. Combined with the incident ion quantity data obtained from ion current signal monitoring, the sputtering yield and spatial distribution characteristics of the sputtering products under experimental conditions are finally determined.

[0050] It should be noted that the combination of the technical features in the embodiments of this application is not limited to the combination methods described in the embodiments of this application or the combination methods described in specific embodiments. All technical features described in this application can be freely combined or combined in any way, unless they contradict each other.

[0051] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," and / or "the" do not specifically refer to the singular and may also include the plural. Generally speaking, the term "comprising" only indicates that it includes the explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0052] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications or equivalent substitutions made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An atomic deposition device suitable for ion sputtering experiments, characterized in that, It includes a sputtering product deposition module, a support and position adjustment module, a tilt adjustment module, and a target fixation and beam signal acquisition module. Among them, the support and position adjustment module is used as a base to be placed at the bottom of the vacuum chamber, and to carry and drive the sputtering product deposition module, tilt adjustment module and target fixing and beam signal acquisition module to move in the horizontal and / or vertical directions. The sputtering product deposition module is connected to the support and position adjustment module to fix the sample sheet and realize the deposition and sampling of sputtered atoms; The tilt adjustment module is mounted on the support and position adjustment module to achieve adjustment of the ion incident angle; The target fixation and beam signal acquisition module is mounted on the tilt adjustment module and located inside the sputtering product deposition module; the target fixation and beam signal acquisition module is used to fix the sputtering target and acquire the current signal generated by the incident ions.

2. The atomic deposition apparatus for ion sputtering experiments according to claim 1, wherein, The support and position adjustment module includes a translation base plate, a central crossbeam, a direction adjustment structure, two linear guide rails, and a vertical drive structure. The central crossbeam is slidably mounted between the two linear guide rails. The vertical drive structure is used to drive the central crossbeam to move parallel in the vertical direction through the two linear guide rails. The direction adjustment structure is mounted on the central crossbeam and connected to the sputtering product deposition module. The sputtering product deposition module is mounted on the translation base plate of the support and position adjustment module. The translation base plate is connected to the upper slide rail of the central crossbeam through a slide groove.

3. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 2, wherein, The vertical drive structure includes lifting points, lifting cables, top pulleys, counterweights, and guide rail clamps. Lifting points are installed at both ends of the middle crossbeam. The lifting points are connected to the lifting cables, which pass around the top pulleys and connect to the counterweights. The guide rail clamps are used to lock the position of the middle crossbeam.

4. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 3, characterized in that, The counterweight is made of 304 stainless steel.

5. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 2, characterized in that, The orientation adjustment structure includes a ball groove base, a universal ball joint, and a deposition module base plate. The ball groove base is fixed to the translation base plate with bolts. The universal ball joint is assembled inside the ball groove base and locked with locking bolts. At the same time, the universal ball joint is connected to the deposition module base plate. The tilt adjustment module is installed on the deposition module base plate with bolts.

6. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 5, characterized in that, The tilt adjustment module includes a tilt adjustment base, a worm gear knob, an insulating plate, and a conductive base plate. The tilt adjustment base is bolted to the deposition module base plate, and the tilt adjustment and position locking are performed using the worm gear knob. The worm gear is fixed to the insulating plate and meshes with the worm gear through gears. The conductive base plate is bolted to the insulating plate, and the target material is installed in the groove of the conductive base plate and tightened with bolts.

7. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 6, characterized in that, The tilt adjustment module also includes a cable terminal block, which is mounted on a conductive base plate. The cable terminal block is a BNC type feedthrough connector with an outer insulating shell. The target fixing and beam signal acquisition module uses fixing bolts and recessed grooves to fix the sputtering target and acquires ion current signals through a BNC type feedthrough connector.

8. An atomic deposition apparatus suitable for ion sputtering experiments according to any one of claims 1 to 7, characterized in that, The sputtering product deposition module includes arc-shaped vertical ribs, sheet metal parts, and annular cover plates. Six arc-shaped vertical ribs are evenly installed at 60° intervals on the support and position adjustment module. Each arc-shaped vertical rib has a set of sheet metal parts fixed on its left and right sides. The sheet metal parts are used to fix the deposition sheet. At the same time, annular cover plates are installed at the top of the arc-shaped vertical ribs to ensure the stability of the arc-shaped vertical ribs. The annular cover plates have a circular opening in the middle, which serves as the ion beam inlet.

9. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 8, characterized in that, The diameter of the circular opening in the middle of the annular cover is 30mm.

10. An atomic deposition apparatus suitable for ion sputtering experiments according to claim 8, characterized in that, The annular cover is made of 304 stainless steel with an outer diameter of 54mm, an inner diameter of 30mm, and a thickness of 5mm.

Images