A method for obtaining arrayed two-dimensional materials

Abstract

This application relates to the field of materials preparation and discloses a method for obtaining arrayed two-dimensional materials, comprising: obtaining a substrate having multiple single-crystal metal pillars; the multiple single-crystal metal pillars being distributed in an array; and growing a two-dimensional material on the surface of the substrate to form an arrayed two-dimensional material on the upper surface of the multiple single-crystal metal pillars. In this application, the method for obtaining two-dimensional materials involves obtaining a substrate with single-crystal metal pillars and growing a two-dimensional material on the substrate. Since the single-crystal metal pillars are distributed in an array, the two-dimensional material on the single-crystal metal pillars is also distributed in an array. Therefore, this application can obtain arrayed two-dimensional materials, facilitating subsequent batch transfer and expanding the applications of two-dimensional materials.

Description

Technical Field

[0001] This application relates to the field of materials preparation, and in particular to a method for obtaining arrayed two-dimensional materials. Background Technology

[0002] Graphite island sliders can be fabricated using HOPG (highly oriented pyrolytic graphite). A probe is used to push apart the graphite islands, allowing sliders with perfect interfaces to be selected. However, these graphite island sliders exhibit certain differences, such as variations in height and yield. Furthermore, the resulting graphite island sliders are individually distributed, with multiple sliders scattered and irregularly arranged, making batch transfer difficult and thus limiting their application.

[0003] Large-scale single-crystal graphite is typically grown on a single-crystal nickel substrate. However, due to the difference in thermal expansion coefficients between graphite and nickel, graphite grown on nickel at high temperatures will wrinkle during cooling, causing the graphite to split into small, flat regions. This greatly limits the size of the graphite and affects its applications. Therefore, obtaining multiple arrayed single-crystal graphites of uniform size and without wrinkles should be a key focus for those skilled in the art. Summary of the Invention

[0004] The purpose of this application is to provide a method for obtaining arrayed two-dimensional materials, so as to prepare two-dimensional materials with arrayed arrangement, expand the application of two-dimensional materials, and obtain wrinkle-free two-dimensional materials.

[0005] To address the aforementioned technical problems, this application provides a method for obtaining arrayed two-dimensional materials, comprising:

[0006] A substrate having multiple single-crystal metal pillars is obtained; the multiple single-crystal metal pillars are distributed in an array;

[0007] Two-dimensional materials are grown on the surface of the substrate to form an array of two-dimensional materials on the upper surface of the plurality of single-crystal metal pillars.

[0008] Optionally, when the two-dimensional material is graphite, growing the two-dimensional material on the surface of the substrate to form an array of two-dimensional materials distributed on the upper surface of the plurality of single-crystal metal pillars includes:

[0009] The substrate is placed in a first target atmosphere and heated to a first target temperature to segregate graphite on the upper surface of the plurality of single-crystal metal pillars and form amorphous carbon between adjacent single-crystal metal pillars; wherein the gas in the first target atmosphere includes organic carbon-containing gas, reducing gas and inert gas.

[0010] Remove the amorphous carbon.

[0011] Optionally, the flow rate of the organic carbon-containing gas is in the range of 0.05 sccm to 20 sccm, the flow rate of the reducing gas is in the range of 10 sccm to 200 sccm, and the flow rate of the inert gas is in the range of 150 sccm to 1000 sccm.

[0012] Optionally, the first target temperature ranges from 600℃ to 1450℃, and the graphite growth time ranges from 0.5 hours to more than 1450℃.

[0013] Optionally, removing the amorphous carbon includes:

[0014] A substrate containing graphite and amorphous carbon is placed in the cavity of a heating device;

[0015] The cavity is evacuated to remove the air, and an oxidizing gas is introduced into the cavity to the target pressure.

[0016] The heating device is heated to a second target temperature and kept at that temperature, and the amorphous carbon is etched using the oxidizing gas.

[0017] The heating device is cooled to room temperature.

[0018] Optionally, the second target temperature ranges from 200°C to 750°C, and the constant temperature time ranges from 0.5 hours to more than 0.5 hours.

[0019] Optionally, removing the amorphous carbon includes:

[0020] The amorphous carbon or carbon dioxide etching is removed by ultrasonic cleaning.

[0021] Optionally, the size of the upper surface of the single-crystal metal pillar is less than or equal to 1 mm; and / or, the height of the single-crystal metal pillar is less than or equal to 100 μm.

[0022] Optionally, obtaining a substrate having multiple single-crystal metal pillars includes:

[0023] Deposit a metal layer on the substrate;

[0024] The metal layer is patterned to form an array of metal pillars.

[0025] The substrate containing the metal pillars is placed in a second target atmosphere and heated to a third target temperature to crystallize the metal pillars into single crystals, thereby obtaining a substrate with multiple single-crystal metal pillars.

[0026] Alternatively, a metal layer can be deposited on the substrate;

[0027] The substrate having the metal layer is placed in a second target atmosphere and heated to a third target temperature to monocrystallize the metal layer, thereby obtaining a substrate having a monocrystallized metal layer.

[0028] The monocrystalline metal layer is patterned to form an array of monocrystalline metal pillars, resulting in a substrate with multiple monocrystalline metal pillars.

[0029] Optionally, obtaining a substrate having multiple single-crystal metal pillars includes:

[0030] A sacrificial layer is deposited on the upper surface of the monocrystalline metal layer;

[0031] A patterned photoresist is formed on the upper surface of the sacrificial layer;

[0032] Using the patterned photoresist as a mask, the sacrificial layer and the single-crystal metal layer are etched to form a single-crystal metal pillar; wherein the etching depth of the single-crystal metal layer is less than the thickness of the single-crystal metal layer;

[0033] The sacrificial layer and the patterned photoresist are removed to obtain a substrate with multiple single-crystal metal pillars.

[0034] Optionally, after growing a two-dimensional material on the surface of the substrate to form an array of two-dimensional materials on the upper surface of the plurality of single-crystal metal pillars, the method further includes:

[0035] A solid body is fabricated on a substrate having the two-dimensional material and the single-crystal metal pillars; the solid body completely covers the two-dimensional material and the single-crystal metal pillars and fills the spaces between adjacent single-crystal metal pillars.

[0036] The substrate is removed to obtain a fixed body embedded with the two-dimensional material and the single-crystal metal pillar;

[0037] The fixture containing the two-dimensional material and the single-crystal metal pillar is transferred and fixed onto the substrate;

[0038] The fixed body is partially etched away to expose the two-dimensional material.

[0039] The present application provides a method for obtaining an arrayed two-dimensional material, comprising: obtaining a substrate having a plurality of single-crystal metal pillars; the plurality of single-crystal metal pillars being distributed in an array; and growing a two-dimensional material on the surface of the substrate to form an arrayed two-dimensional material on the upper surface of the plurality of single-crystal metal pillars.

[0040] As can be seen, the method for obtaining two-dimensional materials in this application involves obtaining a substrate with single-crystal metal pillars, and then growing two-dimensional materials on the substrate. Since the single-crystal metal pillars are distributed in an array, the two-dimensional materials on the single-crystal metal pillars are also distributed in an array. Therefore, this application can obtain two-dimensional materials distributed in an array, which facilitates subsequent batch transfer and expands the applications of two-dimensional materials. Furthermore, the two-dimensional materials grown on single-crystal metal pillars in this application are small in size, which avoids wrinkles and results in wrinkle-free two-dimensional materials. Attached Figure Description

[0041] To more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 A flowchart illustrating a method for obtaining arrayed two-dimensional materials provided in this application embodiment;

[0043] Figure 2 A process for obtaining a substrate having multiple single-crystal metal pillars is provided in the embodiments of this application. Figure 1 ;

[0044] Figure 3 A process for obtaining a substrate having multiple single-crystal metal pillars is provided in the embodiments of this application. Figure 2 ;

[0045] Figure 4 This application provides a process flow for obtaining a substrate having multiple single-crystal metal pillars. Figure 1 ;

[0046] Figure 5 A process for obtaining a substrate having multiple single-crystal metal pillars is provided in the embodiments of this application. Figure 3 ;

[0047] Figure 6 This application provides a process flow for obtaining a substrate having multiple single-crystal metal pillars. Figure 2 ;

[0048] Figure 7 A flowchart illustrating a two-dimensional material distributed by a transfer array, as provided in an embodiment of this application;

[0049] Figure 8 This is a process flow diagram of a two-dimensional material with a transfer array distribution provided in an embodiment of this application. Detailed Implementation

[0050] To enable those skilled in the art to better understand the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0051] Many specific details are set forth in the following description in order to provide a full understanding of the invention. However, the invention may also be practiced in other ways different from those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0052] As described in the background section, the graphite island sliders currently being prepared are individually distributed. The graphite island sliders are relatively scattered and irregular, making it difficult to transfer them in batches, which in turn limits the application of graphite island sliders.

[0053] In view of this, this application provides a method for obtaining arrayed two-dimensional materials, please refer to... Figure 1 The method includes:

[0054] Step S101: Obtain a substrate having multiple single-crystal metal pillars; the multiple single-crystal metal pillars are distributed in an array.

[0055] It should be noted that the number of single-crystal metal pillars is not limited in this embodiment and depends on the situation. The spacing between adjacent single-crystal metal pillars can be equal, and the specific spacing can be set by the user.

[0056] It should also be noted that the material of the single-crystal metal pillar is not limited in this embodiment, and can be determined according to the type of two-dimensional material to be grown.

[0057] As one possible implementation, when the two-dimensional material is graphite, the material of the single crystal metal pillar can be a metal with a carbon content of more than 0.1%, such as an alloy formed by any one or any combination of nickel, iron, cobalt, platinum, and titanium, or an alloy formed by iron, cobalt, platinum, titanium and other metals (such as copper, gold, molybdenum and tungsten), or a copper-nickel alloy, a gold-nickel alloy, etc.

[0058] The shape of a single-crystal metal pillar includes, but is not limited to, any one of the following: circle, square, rectangle, triangle, or polygon. A polygon refers to a shape with five or more sides.

[0059] It should be noted that the size of the single-crystal metal pillar is not limited in this embodiment and can be set by the user.

[0060] As one possible implementation, the size of the upper surface of the single-crystal metal pillar is less than or equal to 1 mm. For example, the size of the upper surface of the single-crystal metal pillar can be 1 mm, 0.5 mm, 200 μm, 300 μm, 100 μm, 50 μm, etc.

[0061] For example, when the shape of the single crystal metal pillar is circular, the dimension of the upper surface of the single crystal metal pillar refers to the diameter; when the shape of the single crystal metal pillar is square, rectangular, or triangular, the dimension of the upper surface of the single crystal metal pillar refers to the side length.

[0062] Preferably, the size range of the upper surface of the single-crystal metal pillar is 20μm~30μm, which can make the formed two-dimensional material wrinkle-free and achieve better results.

[0063] It should be noted that the height of the single-crystal metal pillar is not limited in this embodiment and can be set by the user.

[0064] As one possible implementation, the height of the single-crystal metal pillar is less than or equal to 100 μm. For example, the height of the single-crystal metal pillar can be 100 nm, 200 nm, 500 nm, 800 nm, 1000 nm, 2 μm, 4 μm, 6 μm, 8 μm, 10 μm, 20 μm, 40 μm, 60 μm, 80 μm, 100 μm, etc.

[0065] If the height of the single-crystal metal pillar is too low, the carbon content within it will be too small, making it difficult for graphite to form a continuous film on the pillar's surface. Conversely, if the height of the single-crystal metal pillar is too high, it will increase manufacturing costs and complexity.

[0066] Step S102: A two-dimensional material is grown on the surface of the substrate to form an array of two-dimensional materials on the upper surface of the plurality of single-crystal metal pillars.

[0067] Since the single-crystal metal pillars are distributed in an array, the two-dimensional materials on the single-crystal metal pillars are also distributed in an array.

[0068] This embodiment does not limit the type of two-dimensional material; it depends on the circumstances. For example, the two-dimensional material can be graphite, boron nitride, etc.

[0069] In this embodiment, the method for obtaining two-dimensional materials involves obtaining a substrate with single-crystal metal pillars and growing two-dimensional materials on the substrate. Since the single-crystal metal pillars are distributed in an array, the two-dimensional materials on the single-crystal metal pillars are also distributed in an array. Therefore, this application can obtain two-dimensional materials distributed in an array, which facilitates subsequent batch transfer and expands the applications of two-dimensional materials. Furthermore, the two-dimensional materials grown on single-crystal metal pillars in this application are small in size, which avoids wrinkles and results in wrinkle-free two-dimensional materials.

[0070] Please refer to Figure 2 Based on the above embodiments, in one embodiment of this application, obtaining a substrate having multiple single-crystal metal pillars includes:

[0071] Step S201: Deposit a metal layer on the substrate.

[0072] In this embodiment, the substrate is not limited and can be selected at will. For example, the substrate includes, but is not limited to, sapphire substrate, quartz substrate, mica substrate, silicon wafer substrate, or other high-temperature resistant (900℃~1350℃) substrate.

[0073] The deposition methods for the metal layer include, but are not limited to, electron beam evaporation, thermal evaporation, or magnetron sputtering, and the specific method can be selected by the user.

[0074] In this embodiment, the thickness of the metal layer is not limited and depends on the situation. For example, the thickness of the metal layer can range from 200nm to 20000nm. Exemplary examples include metal layer thicknesses of 200nm, 500nm, 1000nm, 5000nm, 8000nm, 10000nm, 12000nm, 18000nm, and 20000nm.

[0075] In this embodiment, the metal layer can be a nickel layer or other metal layers.

[0076] Step S202: The metal layer is patterned to form an array of metal pillars.

[0077] It should be noted that this embodiment does not limit the method of patterning processing, and users can choose their own method. For example, patterning can be performed using micro-nano fabrication techniques such as photolithography or laser direct writing.

[0078] In this step, the depth of the patterning process is equal to the thickness of the metal layer, and the metal pillars are independently distributed on the substrate.

[0079] Step S203: Place the substrate containing the metal pillars in a second target atmosphere and heat it to a third target temperature to crystallize the metal pillars into single crystals, thereby obtaining a substrate containing multiple single crystal metal pillars.

[0080] It should be noted that the type of gas in the second target atmosphere is not limited in this embodiment.

[0081] As one possible implementation method, the gas in the second target atmosphere includes a reducing gas and an inert gas. The reducing gas can be hydrogen, and the inert gas includes, but is not limited to, argon, nitrogen, etc.

[0082] When the metal column is a nickel column, the range of the third target temperature can be 900℃~1300℃, for example, the third target temperature can be 900℃, 1000℃, 1200℃, 1300℃, etc.

[0083] Compared to directly using a single-crystallized metal layer, this embodiment obtains a single-crystallized metal pillar by fabricating a metal layer on a substrate and then performing a single-crystallization process on the metal pillar. This reduces manufacturing costs and has a wider range of applications.

[0084] It should be noted that performing steps S201 to S203 alone can achieve single crystallization of metals (such as nickel).

[0085] Please refer to Figures 3 to 4 Based on the above embodiments, in one embodiment of this application, obtaining a substrate having multiple single-crystal metal pillars includes:

[0086] Step S301: Deposit a metal layer on the substrate.

[0087] In this embodiment, the substrate is not limited and can be selected at will. For example, the substrate includes, but is not limited to, sapphire substrate, quartz substrate, mica substrate, silicon wafer substrate, or other high-temperature resistant (900℃~1350℃) substrate.

[0088] The deposition methods for the metal layer include, but are not limited to, electron beam evaporation, thermal evaporation, or magnetron sputtering, and the specific method can be selected by the user.

[0089] In this embodiment, the thickness of the metal layer is not limited and depends on the situation. For example, the thickness of the metal layer can range from 200nm to 20000nm. Exemplary examples include metal layer thicknesses of 200nm, 500nm, 1000nm, 5000nm, 8000nm, 10000nm, 12000nm, 18000nm, and 20000nm.

[0090] In this embodiment, the metal layer can be a nickel layer or other metal layers.

[0091] Step S302: Place the substrate having the metal layer in a second target atmosphere and heat it to a third target temperature to monocrystallize the metal layer, thereby obtaining a substrate having a monocrystallized metal layer.

[0092] It should be noted that the type of gas in the second target atmosphere is not limited in this embodiment.

[0093] As one possible implementation method, the gas in the second target atmosphere includes a reducing gas and an inert gas. The reducing gas can be hydrogen, and the inert gas includes, but is not limited to, argon, nitrogen, etc.

[0094] When the metal column is a nickel column, the range of the third target temperature can be 900℃~1300℃, for example, the third target temperature can be 900℃, 1000℃, 1200℃, 1300℃, etc.

[0095] Step S303: The single-crystal metal layer is patterned to form an array of single-crystal metal pillars, resulting in a substrate with multiple single-crystal metal pillars.

[0096] It should be noted that this embodiment does not limit the method of patterning processing, and users can choose their own method. For example, patterning can be performed using micro-nano fabrication techniques such as photolithography or laser direct writing.

[0097] In this step, the depth of the patterning process is equal to the thickness of the single-crystal metal layer, and the single-crystal metal pillars are independently distributed on the substrate.

[0098] like Figure 4 As shown, when patterning is performed using photolithography, a sacrificial layer can be deposited on a single-crystal metal layer, and then photoresist can be spin-coated onto the sacrificial layer. The photoresist can be patterned using laser direct writing or exposure and development to form a patterned photoresist. Then, using the patterned photoresist as a mask, the sacrificial layer and the single-crystal metal layer are etched, and the sacrificial layer and the patterned photoresist are removed to obtain a substrate with multiple single-crystal metal pillars.

[0099] Compared to directly using a single-crystallized metal layer, this embodiment reduces manufacturing costs and has a wider range of applications by fabricating a metal layer on a substrate and then single-crystallizing the metal layer.

[0100] It should be noted that single crystallization of metals (such as nickel) can be achieved by performing steps S301 to S303 separately.

[0101] Please refer to Figures 5 to 6 Based on the above embodiments, in one embodiment of this application, obtaining a substrate having multiple single-crystal metal pillars includes:

[0102] Step S401: Deposit a sacrificial layer on the upper surface of the monocrystalline metal layer.

[0103] In this embodiment, the monocrystalline metal layer can be a monocrystalline nickel layer or other monocrystalline metal layers. The sacrificial layer can be gold or aluminum, etc.

[0104] Step S402: A patterned photoresist is formed on the upper surface of the sacrificial layer.

[0105] Photoresist is spin-coated onto the sacrificial layer, and then patterned using laser direct writing or exposure development to form patterned photoresist.

[0106] Step S403: Using the patterned photoresist as a mask, etch the sacrificial layer and the single-crystal metal layer to form a single-crystal metal pillar; wherein the etching depth of the single-crystal metal layer is less than the thickness of the single-crystal metal layer.

[0107] Step S404: Remove the sacrificial layer and the patterned photoresist to obtain a substrate with multiple single-crystal metal pillars.

[0108] In this embodiment, a single-crystal metal layer is directly used, and the single-crystal metal layer is etched to form a single-crystal metal pillar.

[0109] Based on any of the above embodiments, in one embodiment of this application, when the two-dimensional material is graphite and the substrate is a sapphire substrate, quartz substrate, mica substrate, silicon wafer substrate, or other high-temperature resistant substrate, growing the two-dimensional material on the surface of the substrate to form an array of two-dimensional materials distributed on the upper surface of the plurality of single-crystal metal pillars includes:

[0110] Step S501: The substrate is placed in a first target atmosphere and heated to a first target temperature to segregate graphite on the upper surface of the plurality of single crystal metal pillars and form amorphous carbon between adjacent single crystal metal pillars; wherein the gas in the first target atmosphere includes organic carbon-containing gas, reducing gas and inert gas.

[0111] Single-crystal metal pillars have a certain amount of dissolved carbon. The graphite on the single-crystal metal pillars is single-crystal graphite segregated from carbon dissolved within the single-crystal metal pillars. Since the interstitial regions between the single-crystal metal pillars serve as the substrate, the regions between adjacent single-crystal metal pillars contain amorphous carbon formed by the decomposition of organic carbon-containing gases.

[0112] It should be noted that this embodiment does not specifically limit the organic carbon-containing gas, and it can be selected at will. For example, the organic carbon-containing gas can be methane, ethane, acetylene, or other organic carbon-containing gases.

[0113] The gas in the first target atmosphere may also include a protective gas, which may include a reducing gas and an inert gas. The reducing gas may be hydrogen, and the inert gas may be argon, nitrogen, etc.

[0114] In this embodiment, the flow rate of the gas in the first target atmosphere is not limited and can be set by the user.

[0115] As one possible implementation, the flow rate of the organic carbon-containing gas can range from 0.05 sccm (standard cubic centimeter per minute) to 20 sccm, the flow rate of the reducing gas can range from 10 sccm to 200 sccm, and the flow rate of the inert gas can range from 150 sccm to 1000 sccm.

[0116] For example, the flow rate of organic carbon-containing gas can be 0.05 sccm, 0.1 sccm, 0.5 sccm, 1 sccm, 5 sccm, 10 sccm, 15 sccm, 20 sccm, etc.; the flow rate of reducing gas can be 10 sccm, 50 sccm, 80 ccm, 100 sccm, 150 sccm, 180 sccm, 200 sccm, etc.; and the flow rate of inert gas can be 150 sccm, 200 sccm, 400 ccm, 600 sccm, 800 sccm, 900 sccm, 1000 sccm, etc.

[0117] In this embodiment, the first target temperature and growth time are not limited and can be determined as appropriate.

[0118] As one possible implementation, the first target temperature ranges from 600℃ to 1450℃, and the graphite growth time ranges from 0.5 hours to more. The graphite growth thickness is directly proportional to the growth time.

[0119] For example, the first target temperature can be 950℃, 1000℃, 1100℃, 1200℃, 1300℃, 1350℃, etc.; the growth time of graphite can be 0.5 hours, 1 hour, 10 hours, 15 hours, 30 hours, 40 hours, 50 hours, etc. Generally speaking, the longer the growth time, the thicker the graphite will grow.

[0120] As one possible implementation, when the gases in the first target atmosphere include methane, hydrogen, and argon, the flow rate of methane can be in the range of 0.01 to 10 sccm, the flow rate of hydrogen can be in the range of 1 to 200 sccm, and the flow rate of argon can be in the range of 1 to 1000 sccm.

[0121] The heating rate in this step can range from 1℃ / min to 20℃ / min; the graphite growth pressure can range from 0.1kPa to 100kPa (one atmosphere). To remove as much air as possible from the growth furnace tube, the pressure can be reduced to below 0.2Pa before growth.

[0122] It should be noted that after the graphite growth is completed and before the amorphous carbon is removed, the process may further include: stopping the introduction of organic carbon-containing gas, continuing to introduce protective gas, cooling to room temperature, and stopping the introduction of protective gas.

[0123] The cooling rate can range from 0.2℃ / min to 10℃ / min. The slow cooling rate allows the dissolved carbon in the single crystal metal column to precipitate more fully, meaning the graphite will be thicker.

[0124] Step S502: Remove the amorphous carbon.

[0125] It should be noted that the method for removing amorphous carbon is not limited in this embodiment.

[0126] As one possible implementation, removing the amorphous carbon includes:

[0127] Step S5021: Place the substrate containing graphite and amorphous carbon into the cavity of the heating device.

[0128] The heating equipment can be a tubular furnace.

[0129] Step S5022: Evacuate the cavity to remove the air from the cavity, and introduce an oxidizing gas into the cavity to the target pressure.

[0130] The target air pressure range can be 100Pa~100kPa.

[0131] Oxidizing gases include, but are not limited to, any one of carbon dioxide, oxygen, and H2O, or combinations of inert gases with at least one of carbon dioxide, oxygen, and H2O.

[0132] Step S5023: Heat the heating device to the second target temperature and keep it constant, and use the oxidizing gas to etch the amorphous carbon.

[0133] In this embodiment, the second target temperature and the constant temperature time are not limited and can be set by the user.

[0134] As one possible implementation, the second target temperature can be in the range of 200℃ to 750℃, and the constant temperature time can be more than 0.5 hours.

[0135] For example, the second target temperature can be 200℃, 400℃, 600℃, 700℃, 750℃, etc.; the constant temperature time can be 0.5 hours, 2 hours, 5 hours, 8 hours, 10 hours, 12 hours, etc.

[0136] Step S5024: Cool the heating device to room temperature.

[0137] It can be cooled down naturally.

[0138] As another possible implementation, removing the amorphous carbon includes: removing the amorphous carbon by ultrasonic cleaning or carbon dioxide etching or H2O etching.

[0139] In other embodiments, etching can be performed using very low concentrations of oxygen to remove amorphous carbon. Inert gases can also be incorporated into the etching gas used to remove amorphous carbon.

[0140] The solvent used for ultrasonic cleaning is a solvent that does not react with the single-crystal metal pillar. The specific type of solvent is not limited in this embodiment. For example, when the single-crystal metal pillar is a single-crystal nickel pillar, the solvent for ultrasonic cleaning can be water, ethanol, acetone, etc.

[0141] The amorphous carbon between the single-crystal metal pillars is attached to the substrate and has a relatively weak bonding force. The graphite on the surface of the single-crystal metal pillars is segregated from inside the single-crystal metal pillars and has a very strong bonding force. Therefore, ultrasonic cleaning can remove the amorphous carbon between the single-crystal metal pillars without affecting the graphite on the single-crystal metal pillars.

[0142] Please refer to Figures 7 to 8 Based on any of the above embodiments, in one embodiment of this application, when the substrate is a sapphire substrate, quartz substrate, mica substrate, silicon wafer substrate, or other high-temperature resistant substrate, after growing a two-dimensional material on the surface of the substrate to form an array of two-dimensional materials distributed on the upper surface of the plurality of single-crystal metal pillars, the process may further include a process of transferring the array of two-dimensional materials, which may include:

[0143] Step S601: A fixation body is fabricated on a substrate having the two-dimensional material and the single-crystal metal pillar; the solid completely covers the two-dimensional material and the single-crystal metal pillar and fills the spaces between adjacent single-crystal metal pillars.

[0144] In this embodiment, the material of the fixation body is not limited, as long as it can achieve the fixation effect. For example, the material of the fixation body can be PMMA (Polymethyl Methacrylate), rosin, or polyimide, etc.

[0145] When the material of the fixation body can be PMMA, an A4 PMMA solution can be spin-coated onto the substrate to fill the single crystal metal pillar array. The rotation speed range is 500~2000 rpm, and the time range is 0.5~2 minutes. Then, it is dried at a temperature of 140℃ for a drying time range of 1~15 minutes.

[0146] As one possible implementation method, the rotation speed can be 1000 rpm, the time can be 1 minute, and the drying time can be 3 minutes.

[0147] Step S602: Remove the substrate to obtain a fixture embedded with the two-dimensional material and the single-crystal metal pillar.

[0148] The substrate can be removed using a wet removal method. For example, when the substrate is sapphire, the substrate with the aforementioned fixation structure can be floated on a saturated potassium hydroxide solution. Once the fixation structure with embedded two-dimensional material and single-crystal metal pillars separates from the sapphire substrate and remains suspended on the liquid surface, the fixation structure with embedded two-dimensional material and single-crystal metal pillars can be rinsed three times with deionized water to clean the potassium hydroxide saturated solution.

[0149] Step S603: Transfer and fix the fixture containing the two-dimensional material and the single crystal metal pillar onto the substrate.

[0150] The substrate serves to support the fixed body containing the two-dimensional material and the single-crystal metal pillar. The specific type is not limited and can be selected at your own discretion.

[0151] The surface of the substrate can be flat or curved.

[0152] It can be fixed by heating, and the heating temperature can be between 80℃ and 180℃.

[0153] Step S604: Etch away part of the fixation body to expose the two-dimensional material.

[0154] In this embodiment, the etching depth is not limited, as long as the two-dimensional material is exposed. As one possible implementation, the etching depth can be from the two-dimensional material just exposed on the single-crystal metal pillar to 1 / 3 of the overall height.

[0155] After exposing the two-dimensional material, its surface can be rubbed against other materials.

[0156] The following describes the methods for obtaining two-dimensional materials in this application under different circumstances.

[0157] Example 1: First, a 1000-micrometer nickel layer was deposited on a sapphire substrate using electron beam evaporation. Then, a nickel pillar array was fabricated using photolithography and etching. The nickel pillars were square, 30 micrometers x 30 micrometers in size, with a spacing of 50 micrometers between them. The sapphire substrate sample with the nickel pillar array was placed in a tube furnace for single crystallization under the following conditions: constant temperature at 1000℃ for 5 hours, H2 flow rate of 10 sccm, and Ar flow rate of 200 sccm. Subsequently, it was cooled to room temperature and the sample was removed.

[0158] The single-crystallized sample was placed back into the isothermal zone of the tube furnace for graphite growth. The equipment was first evacuated to below 0.2 Pa, the vacuum pump was turned off, and argon and hydrogen were introduced until atmospheric pressure was reached. The exhaust valve was then opened, and the temperature was slowly increased to 1250°C under an argon and hydrogen atmosphere (argon flow rate 600 sccm and hydrogen flow rate 50 sccm). Methane was then introduced and the temperature was maintained for 10 hours. After the isothermal period, the methane was turned off, and the sample was slowly cooled to room temperature in a hydrogen-argon mixture. The sample was then removed, and graphite was grown on the surface of the single-crystallized nickel pillar.

[0159] Example 2: First, a 1000-micrometer nickel layer was deposited on a sapphire substrate using electron beam evaporation. Then, a nickel pillar array was fabricated using photolithography and etching. The nickel pillars were square, 30 micrometers x 30 micrometers in size, with a spacing of 50 micrometers. The sapphire substrate sample with the nickel pillar array was placed in a tube furnace for single crystallization under the following conditions: 1000℃ for 5 hours, H2 flow rate of 10 sccm, and Ar flow rate of 200 sccm. Then, under an argon and hydrogen atmosphere (argon flow rate of 600 sccm and hydrogen flow rate of 50 sccm), the temperature was slowly increased to 1250℃, and methane (flow rate of 1 sccm) was introduced and held at this temperature for 10 hours. After the holding period, the methane was turned off, and the sample was slowly cooled to room temperature in a hydrogen-argon mixture before being removed.

[0160] The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.

[0161] The method for obtaining arrayed two-dimensional materials provided in this application has been described in detail above. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the solution and core ideas of this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of this application.

Claims

1. A method for obtaining an arrayed two-dimensional material, characterized by, include: Obtain a substrate with multiple single-crystal metal pillars; The single-crystal metal pillars are distributed in an array; Two-dimensional materials are grown on the surface of the substrate to form an array of two-dimensional materials on the upper surface of the plurality of single-crystal metal pillars.

2. The method for obtaining an arrayed two-dimensional material according to claim 1, wherein When the two-dimensional material is graphite, growing the two-dimensional material on the surface of the substrate to form an array of two-dimensional materials distributed on the upper surface of the plurality of single-crystal metal pillars includes: The substrate is placed in a first target atmosphere and heated to a first target temperature to segregate graphite on the upper surface of the plurality of single-crystal metal pillars and form amorphous carbon between adjacent single-crystal metal pillars; wherein the gas in the first target atmosphere includes organic carbon-containing gas, reducing gas and inert gas. Remove the amorphous carbon.

3. The method for obtaining an arrayed two-dimensional material according to claim 2, wherein The flow rate range of the organic carbon-containing gas is 0.05 sccm to 20 sccm, the flow rate range of the reducing gas is 10 sccm to 200 sccm, and the flow rate range of the inert gas is 150 sccm to 1000 sccm.

4. The method for obtaining an arrayed two-dimensional material according to claim 2, wherein The first target temperature ranges from 600℃ to 1450℃, and the graphite growth time ranges from 0.5 hours to more than 1450℃.

5. The method for obtaining an arrayed two-dimensional material according to claim 2, wherein Removing the amorphous carbon includes: A substrate containing graphite and amorphous carbon is placed in the cavity of a heating device; The cavity is evacuated to remove the air, and an oxidizing gas is introduced into the cavity to the target pressure. The heating device is heated to a second target temperature and kept at that temperature, and the amorphous carbon is etched using the oxidizing gas. The heating device is cooled to room temperature.

6. The method for obtaining arrayed two-dimensional materials as described in claim 5, characterized in that, The second target temperature ranges from 200℃ to 750℃, and the constant temperature time ranges from 0.5 hours to more than 750℃.

7. The method for obtaining arrayed two-dimensional materials as described in claim 2, characterized in that, Removing the amorphous carbon includes: The amorphous carbon or carbon dioxide etching is removed by ultrasonic cleaning.

8. The method for obtaining arrayed two-dimensional materials as described in claim 1, characterized in that, The size of the upper surface of the single-crystal metal pillar is less than or equal to 1 mm; and / or the height of the single-crystal metal pillar is less than or equal to 100 μm.

9. The method for obtaining arrayed two-dimensional materials as described in any one of claims 1 to 8, characterized in that, Obtaining a substrate with multiple single-crystal metal pillars includes: Deposit a metal layer on the substrate; The metal layer is patterned to form an array of distributed metal pillars. The substrate containing the metal pillars is placed in a second target atmosphere and heated to a third target temperature to crystallize the metal pillars into single crystals, thereby obtaining a substrate with multiple single-crystal metal pillars. Alternatively, a metal layer can be deposited on the substrate; The substrate having the metal layer is placed in a second target atmosphere and heated to a third target temperature to monocrystallize the metal layer, thereby obtaining a substrate having a monocrystallized metal layer. The monocrystalline metal layer is patterned to form an array of monocrystalline metal pillars, resulting in a substrate with multiple monocrystalline metal pillars.

10. The method for obtaining arrayed two-dimensional materials as described in any one of claims 1 to 8, characterized in that, Obtaining a substrate with multiple single-crystal metal pillars includes: A sacrificial layer is deposited on the upper surface of the monocrystalline metal layer; A patterned photoresist is formed on the upper surface of the sacrificial layer; Using the patterned photoresist as a mask, the sacrificial layer and the single-crystal metal layer are etched to form a single-crystal metal pillar; wherein the etching depth of the single-crystal metal layer is less than the thickness of the single-crystal metal layer; The sacrificial layer and the patterned photoresist are removed to obtain a substrate with multiple single-crystal metal pillars.

11. The method for obtaining arrayed two-dimensional materials as described in claim 9, characterized in that, After growing a two-dimensional material on the surface of the substrate to form an array of two-dimensional materials on the upper surface of the plurality of single-crystal metal pillars, the process further includes: A solid body is fabricated on a substrate having the two-dimensional material and the single-crystal metal pillars; the solid body completely covers the two-dimensional material and the single-crystal metal pillars and fills the spaces between adjacent single-crystal metal pillars. The substrate is removed to obtain a fixed body embedded with the two-dimensional material and the single-crystal metal pillar; The fixture containing the two-dimensional material and the single-crystal metal pillar is transferred and fixed onto the substrate; The fixed body is partially etched away to expose the two-dimensional material.

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