Dual-channel gas showerhead, gas inlet device, and vapor deposition apparatus

Abstract

This invention provides a dual-channel gas spray head, an air intake device, and a vapor deposition apparatus. The gas spray head has a first gas diffusion chamber and a first gas convergence chamber surrounding a gas equalization disk. The equalization disk includes a first gas delivery channel and a second gas delivery channel. The gas delivery channel includes a transverse channel and a longitudinal channel. The transverse channel includes a first transverse channel arranged transversely within the equalization disk along a first direction, with its two ends connected to the gas diffusion chamber and the gas convergence chamber, respectively. The longitudinal channel extends longitudinally from the first transverse channel to the lower surface of the equalization disk. A portion of the first gas reaches the first gas convergence chamber via the first transverse channel, and another portion of the first gas reaches the reaction chamber via the first transverse channel and the longitudinal channel. The second gas delivery channel extends longitudinally through the equalization disk and is spaced apart from the longitudinal channel. The second gas reaches the reaction chamber via the second gas delivery channel. This invention can improve the replacement efficiency of the gas spray head and the uniformity of the gas phase precursor intake.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a dual-channel gas spray head, an air inlet device, and a vapor deposition apparatus. Background Technology

[0002] Under vacuum conditions, growing thin films on substrate surfaces using vapor deposition technology is an important approach to obtaining thin film materials with excellent mechanical properties and special physical / chemical properties, and it is a research hotspot in the fields of materials science and physical science today.

[0003] Atomic Layer Deposition (ALD) is one of the most widely used thin film growth technologies. Essentially a type of Chemical Vapor Deposition (CVD), it involves alternately pulsed introduction of a gaseous precursor into a reactor, where it is adsorbed onto the substrate and reacts with atoms through chemical interactions to form a deposited film. Compared to other thin film preparation methods such as CVD and Physical Vapor Deposition (PVD), ALD offers significant advantages in terms of film shape preservation and uniformity due to its unique reaction mechanism.

[0004] During atomic layer deposition (ALD), different types of gaseous precursors (referred to as Type A and Type B gases) are alternately introduced into the reaction chamber containing the substrate through a gas showerhead in the vapor deposition equipment, and a uniform reaction gas supply is required to the substrate. This means that the different types of gaseous precursors must not only not mix within the gas showerhead, but also be isolated from each other to prevent cross-contamination.

[0005] In existing technology, the gas spray head alternately introduces Class A gas and Class B gas, and when the introduction of Class A gas or Class B gas stops, an inert gas is introduced to purge the residual Class A gas or Class B gas in the gas spray head. This method results in low replacement efficiency of the gas spray head and the problem of uneven mixing of Class A gas and Class B gas in the reaction chamber. Summary of the Invention

[0006] The purpose of this invention is to provide a dual-channel gas spray head, an air inlet device, and a vapor deposition equipment, which can improve the replacement efficiency of the gas spray head and the uniformity of gas phase precursor mixing.

[0007] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0008] A dual-channel gas spray head includes a gas equalization disk. At least one pair of first gas diffusion chambers and first gas converging chambers are provided around the periphery of the gas equalization disk. The first gas diffusion chambers are connected to a first gas source, and the first gas converging chambers are connected to a vacuum pump. The gas equalization disk includes a first gas delivery channel and a second gas delivery channel, wherein:

[0009] The first gas delivery channel includes a transverse channel and a longitudinal channel. The transverse channel includes a first transverse channel arranged transversely inside the gas equalization plate along a first direction, and the two ends of the first transverse channel are respectively connected to the first gas diffusion chamber and the first gas convergence chamber. The longitudinal channel extends longitudinally from the first transverse channel to the lower surface of the gas equalization plate. A portion of the first gas reaches the first gas convergence chamber through the first transverse channel, and another portion of the first gas reaches the reaction chamber through the first transverse channel and the longitudinal channel.

[0010] The second gas delivery channel extends longitudinally through the gas equalization plate and is spaced apart from the longitudinal channel, and the second gas reaches the reaction chamber through the second gas delivery channel.

[0011] Optionally, the first gas diffusion cavity and the first gas convergence cavity are arranged in an arc-shaped segment along the circumference of the gas equalization disk.

[0012] Optionally, the periphery of the gas distribution disk is provided with a first gas diffusion cavity and a first gas convergence cavity.

[0013] Optionally, the transverse channel further includes a second transverse channel arranged transversely inside the gas equalization disk along a second direction perpendicular to the first direction, and the longitudinal channel extends longitudinally from the second transverse channel to the lower surface of the gas equalization disk. A portion of the first gas reaches the first gas gathering chamber via the first transverse channel and the second transverse channel, and another portion of the first gas reaches the reaction chamber via the first transverse channel, the second transverse channel and the longitudinal channel.

[0014] Optionally, a baffle is provided at the junction of the first gas diffusion chamber and the first gas convergence chamber. The baffle has at least one through vent hole, through which the first gas travels from the first gas diffusion chamber to the first gas convergence chamber.

[0015] Optionally, the gas flow rate through the vent is 3% to 5% of the gas flow rate within the first gas diffusion chamber.

[0016] Optionally, on the lower surface of the gas distribution plate, the plurality of air outlets of the second gas delivery channel are spaced apart from the plurality of air outlets of the longitudinal channel.

[0017] Optionally, the gas spray head further includes a cover plate, which is located above the gas equalization plate and forms a second gas diffusion cavity with the gas equalization plate. The second gas diffusion cavity is connected to the second gas delivery channel.

[0018] Optionally, the cover plate has a first gas supply channel and a gas extraction channel on its periphery, and a second gas supply channel in the middle. The first gas diffusion chamber is connected to the first gas source through the first gas supply channel, the second gas diffusion chamber is connected to the second gas source through the second gas supply channel, and the first gas gathering chamber is connected to the gas extraction pump through the gas extraction channel.

[0019] Optionally, the periphery of the gas distribution plate is provided with two first gas diffusion chambers and two first gas convergence chambers, the first gas diffusion chambers and the first gas convergence chambers are spaced apart, and each first gas diffusion chamber is connected to the first gas source, and each first gas convergence chamber is connected to the vacuum pump.

[0020] Optionally, the two first gas diffusion chambers and the two first gas converging chambers are paired up, wherein:

[0021] Gas in one of the first gas diffusion chambers reaches a corresponding first gas converging chamber via a portion of the first transverse channel along the positive direction of the first direction.

[0022] Gas in the other of the first gas diffusion chambers travels in the opposite direction of the first direction via a portion of the first transverse channel to the corresponding other first gas convergence chamber.

[0023] Optionally, on the lower surface of the gas distribution plate, the plurality of air outlets of the second gas delivery channel are spaced apart from the plurality of air outlets of the longitudinal channel.

[0024] Optionally, the gas spray head further includes a cover plate, which is located above the gas equalization plate and forms a second gas diffusion cavity with the gas equalization plate. The second gas diffusion cavity is connected to the second gas delivery channel.

[0025] Optionally, the cover plate has two first gas delivery channels and two gas extraction channels around its periphery, and a second gas delivery channel in the middle. The two first gas diffusion chambers are connected to the first gas source through the two first gas delivery channels, the two first gas convergence chambers are connected to the gas pump through the two gas extraction channels, and the second gas diffusion chamber is connected to the second gas source through the second gas delivery channel.

[0026] Optionally, the second gas delivery channel includes a first vent section, a second vent section, and a third vent section connected sequentially from top to bottom, wherein the diameter of the second vent section is smaller than that of the first vent section and the third vent section.

[0027] Optionally, the longitudinal channel includes a fourth pore section and a fifth pore section connected sequentially from top to bottom, wherein the diameter of the fourth pore section is smaller than that of the fifth pore section.

[0028] An air intake device includes: a first air supply pipe connected to a first gas source; a second air supply pipe connected to a second gas source; an air extraction pipe connected to an air extraction pump; and a dual-channel gas spray head as described above, wherein the second air supply pipe is connected to a second air delivery channel, the first air supply pipe is connected to a first gas diffusion chamber, and the air extraction pipe is connected to a first gas convergence chamber.

[0029] Optionally, the number of the first gas delivery pipes is the same as the number of the first gas diffusion chambers, and the number of the gas extraction pipes is the same as the number of the first gas convergence chambers.

[0030] Optionally, when the first gas is supplied to the reaction chamber, the pump operates at a first flow rate; when the supply of the first gas to the reaction chamber is stopped, the pump operates at a second flow rate, wherein the second flow rate is greater than the first flow rate.

[0031] A vapor deposition apparatus includes: a reaction chamber; a base disposed at the bottom of the interior of the reaction chamber for supporting a substrate; an air inlet device as described above disposed at the top of the reaction chamber, opposite to the base, for supplying reactive gas to the surface of the substrate; and an extraction ring disposed on the reaction chamber for extracting air from the interior of the reaction chamber.

[0032] Compared with the prior art, the present invention has the following advantages:

[0033] This invention provides a dual-channel gas spray head, air intake device, and vapor deposition equipment. A first gas supply channel allows for horizontal air intake, while a second gas supply channel allows for vertical air intake. These two channels are independent of each other. A first gas is supplied to the reaction chamber through the first channel, and a second gas is supplied to the reaction chamber through the second channel. This allows for the simultaneous input of both types of gases without mixing within the gas spray head, improving the uniformity of the mixing of the first and second gases within the reaction chamber. The first gas diffuses through the first gas diffusion chamber and then enters the first horizontal channel, flowing from the first horizontal channel into the first gas converging chamber, or flowing into the vertical channel and then into the reaction chamber. The first gas converging chamber is connected to the suction pump, enabling rapid suction to quickly remove and switch the first gas, thus improving the replacement efficiency of the gas spray head. Attached Figure Description

[0034] To more clearly illustrate the technical solution of the present invention, the accompanying drawings used in the description will be briefly introduced below. Obviously, the drawings described below are one embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort:

[0035] Figure 1 This is a structural diagram of a vapor deposition apparatus according to an embodiment of the present invention;

[0036] Figure 2 This is a structural diagram of the air intake device provided in the first embodiment of the present invention;

[0037] Figure 3 A cross-sectional view of the gas distribution plate provided in the first embodiment of the present invention;

[0038] Figure 4 A perspective view of a gas distribution plate provided in an embodiment of the present invention;

[0039] Figure 5 A schematic diagram of the first and second air delivery channels of the gas distribution plate provided in an embodiment of the present invention;

[0040] Figure 6 This is a structural diagram of the air intake device provided in the second embodiment of the present invention;

[0041] Figure 7 A top-view cross-sectional view of the air distribution disc provided in the second embodiment of the present invention;

[0042] Figure 8 This is a top view of the gas distribution plate provided in the second embodiment of the present invention;

[0043] Figure 9 for Figure 8 Enlarged view of point A in the middle;

[0044] Figure 10 This is a side view of the air distribution plate provided in the second embodiment of the present invention.

[0045] The attached figures are labeled as follows:

[0046] Reaction chamber 100; gas spray head 310; first gas source 320; vacuum pump 330; second gas source 340; gas distribution plate 311; first gas diffusion chambers 312, 312a, 312b; first gas gathering chambers 313, 313a, 313b; first gas delivery channel 314; second gas delivery channel 315; transverse channel 3141; longitudinal channel 3142; first transverse channel 31411; baffle 316; vent 3161; cover plate 317; second gas diffusion chamber 318; first gas supply channel 3171; vacuum channel 3172; second gas supply channel 3173; first vent section 3151; second vent section 3152; third vent section 3153; fourth vent section 31421; fifth vent section 31422; first gas supply pipe 350; second gas supply pipe 360; vacuum pipe 370. Detailed Implementation

[0047] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the solution proposed by the present invention. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, used only to facilitate and clearly illustrate the embodiments of the present invention. Please refer to the drawings to make the objectives, features, and advantages of the present invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by the present invention, should still fall within the scope of the technical content disclosed in the present invention.

[0048] like Figures 1-10 As shown, this embodiment of the invention provides a dual-channel gas spray head. The gas spray head 310 includes a gas equalization disk 311, and the periphery of the gas equalization disk 311 is provided with at least a pair of first gas diffusion chambers 312 and first gas converging chambers 313. The first gas diffusion chambers 312 are connected to a first gas source 320, and the first gas converging chambers 313 are connected to a vacuum pump 330. The gas equalization disk 311 includes a first gas delivery channel 314 and a second gas delivery channel 315.

[0049] The first gas delivery channel 314 includes a transverse channel 3141 and a longitudinal channel 3142, wherein the transverse channel 3141 includes a channel along a first direction (e.g., Figure 3A first transverse channel 31411 (shown in the X direction) is laterally arranged inside the gas equalization disk 311, and the two ends of the first transverse channel 31411 are respectively connected to the first gas diffusion chamber 312 and the first gas gathering chamber 313. A longitudinal channel 3142 extends longitudinally from the first transverse channel 31411 to the lower surface of the gas equalization disk 311 (i.e., the longitudinal channel 3142 is arranged along the Z direction). A portion of the first gas (Type A gas) reaches the first gas gathering chamber 313 via the first transverse channel 31411, and another portion of the first gas reaches the reaction chamber 100 via the first transverse channel 31411 and the longitudinal channel 3142. A second gas delivery channel 315 extends longitudinally through the gas equalization disk 311 and is spaced apart from the longitudinal channel 3142 (the second gas delivery channel 315 is arranged along the Z direction). A second gas (Type B gas) reaches the reaction chamber 100 via the second gas delivery channel 315.

[0050] In this embodiment, the first gas flows laterally after entering the first gas delivery channel 314, while the second gas flows vertically only after entering the second gas delivery channel 315. The first and second gas delivery channels 314 and 315 are independent of each other. The first gas is delivered to the reaction chamber 100 through the first gas delivery channel 314, and the second gas is delivered to the reaction chamber 100 through the second gas delivery channel 315. This allows for the simultaneous input of two types of gases without mixing within the gas spray head 310, improving the uniformity of the mixing of the first and second gases within the reaction chamber 100. After diffusion through the first gas diffusion chamber 312, the first gas enters the first transverse channel 31411 and flows into the first gas converging chamber 313 from the first transverse channel 31411, or flows into the vertical channel 3142 and then into the reaction chamber 100. The first gas converging chamber 313 is connected to the vacuum pump 330, which can perform rapid vacuuming to quickly remove and switch the first gas, improving the gas replacement efficiency within the gas spray head 310.

[0051] In this embodiment, the first gas diffusion cavity 312 and the first gas gathering cavity 313 are arranged in an arc-shaped segment along the circumference of the gas equalization disk 311, so as to make full use of the space around the gas equalization disk 311 and not affect the introduction of reaction gas into the reaction chamber 100 from the central region of the gas equalization disk 311.

[0052] Example 1

[0053] like Figures 2-5As shown, the gas equalization disk 311 is provided with a first gas diffusion cavity 312 and a first gas convergence cavity 313 on its periphery. The first gas diffusion cavity 312 and the first gas convergence cavity 313 are both arc segments of approximately 180°, so that the first gas can diffuse on half a circle of the gas equalization disk 311 and enter the first gas delivery channel 314.

[0054] like Figure 3 As shown, the transverse channel 3141 also includes a second direction perpendicular to the first direction (i.e., as shown in the diagram). Figure 3 The second transverse channel 31412 (shown in the Y direction) is laterally arranged inside the gas equalization disk 311. The longitudinal channel 3142 extends longitudinally from the second transverse channel 31412 to the lower surface of the gas equalization disk 311. The first gas reaches the first gas gathering chamber 313 via the first transverse channel 31411 and the second transverse channel 31412, or reaches the reaction chamber 100 via the first transverse channel 31411, the second transverse channel 31412 and the longitudinal channel 3142. By setting the transverse channels 3141 as the first transverse channel 31411 and the second transverse channel 31412 orthogonally distributed, with the second transverse channel 31412 communicating with the first transverse channel 31411, the dead space of the first gas in the gas equalization disk 311 can be effectively reduced, the distribution uniformity of the first gas in the entire gas equalization disk 311 can be improved, and the mixing uniformity of the first gas and the second gas can be improved.

[0055] In this embodiment, as Figure 4 As shown, a baffle 316 is provided at the junction of the first gas diffusion chamber 312 and the first gas converging chamber 313 to separate the first gas diffusion chamber 312 and the first gas converging chamber 313 into two independent parts. The baffle 316 has at least one through vent 3161, through which the first gas can reach the first gas converging chamber 313 from the first gas diffusion chamber 312 via the vent 3161. Therefore, by providing the vent 3161 on the baffle 316, a small amount of the first gas can be allowed to diffuse into the first gas converging chamber 313 via the vent 3161, thus reducing the dead zone space circumferentially of the gas equalization disk 311. Furthermore, the gas flow rate through the vent 3161 accounts for 3% to 5% of the gas flow rate in the first gas diffusion chamber 312, thereby not affecting the flow rate of the first gas to the first gas delivery channel 314.

[0056] On the lower surface of the gas equalization plate 311, the multiple gas outlets of the second gas delivery channel 315 are spaced apart from and preferably evenly distributed with the multiple gas outlets of the longitudinal channel 3142, thereby allowing the first gas and the second gas to be evenly introduced into the reaction chamber 100, improving the uniformity of the mixing of the first gas and the second gas.

[0057] like Figure 2 As shown, the gas spray head 310 also includes a cover plate 317, which is located above the gas equalization disk 311 and forms a second gas diffusion cavity 318 between the cover plate 317 and the gas equalization disk 311. The second gas diffusion cavity 318 is connected to the second gas delivery channel 315. After the second gas diffuses through the second gas diffusion cavity 318, it flows into the reaction chamber 100 through the second gas delivery channel 315, thereby improving the uniformity of the distribution of the second gas in the entire gas equalization disk 311, and thus improving the uniformity of the mixing of the first gas and the second gas. The cover plate 317 is provided with a first gas delivery channel 3171 and a gas extraction channel 3172 around its periphery. The first gas diffusion cavity 312 is connected to the first gas source 320 (e.g., ...) through the first gas delivery channel 3171. Figure 1 As shown), the first gas gathering chamber 313 is connected to the air pump 330 (as shown) through the air extraction channel 3172. Figure 1 (As shown). The cover plate 317 has a second gas delivery channel 3173 in the middle, and the second gas diffusion chamber 318 is connected to the second gas source 340 (e.g., as shown) through the second gas delivery channel 3173. Figure 1 (As shown).

[0058] In this embodiment, as Figure 5 As shown, the second gas delivery channel 315 includes a first pore section 3151, a second pore section 3152, and a third pore section 3153 connected sequentially from top to bottom. The pore diameter of the second pore section 3152 is smaller than that of the first pore section 3151 and the third pore section 3153. It can be understood that the second gas, after being accelerated by the smaller pore diameter of the second pore section 3152 in the second gas delivery channel 315, can then smoothly diffuse into the reaction chamber 100 through the larger pore diameter of the third pore section 3153, thus ensuring uniform distribution of the second gas within the reaction chamber 100. Furthermore, since the pore diameter of the second pore section 3152 is small, machining a long and narrow deep hole is difficult. Therefore, the larger pore diameter of the first pore section 3151 is first machined on the upper surface of the gas distribution plate 311, and then the second pore section 3152 is machined at the bottom of the first pore section 3151, thereby reducing the machining difficulty of the second pore section 3152.

[0059] Similarly, such as Figure 5As shown, the longitudinal channel 3142 includes a fourth pore section 31421 and a fifth pore section 31422 connected sequentially from top to bottom. The pore diameter of the fourth pore section 31421 is smaller than that of the fifth pore section 31422. Thus, in the longitudinal channel 3142, the first gas is first accelerated by the fourth pore section 31421 with a smaller pore diameter, and then the gas can be smoothly diffused into the reaction chamber 100 by the fifth pore section 31422 with a larger pore diameter, thereby making the first gas uniformly distributed in the reaction chamber 100.

[0060] Example 2

[0061] like Figures 6-10 As shown, the periphery of the gas distribution disk 311 is provided with two first gas diffusion chambers 312a and 312b and two first gas converging chambers 313a and 313b. The first gas diffusion chambers 312a and 312b and the first gas converging chambers 313a and 313b are spaced apart, and each first gas diffusion chamber 312a and 312b is connected to a first gas source 320, and each first gas converging chamber 313a and 313b is connected to a vacuum pump 330. The first gas enters the two first gas diffusion chambers 312a and 312b from the first gas source 320 in two separate paths, and then enters the corresponding two first gas converging chambers 313a and 313b along the first transverse channel 31411. The vacuum pump 330 extracts the first gas from the two first gas converging chambers 313a and 313b.

[0062] like Figure 7 As shown, the two first gas diffusion cavities 312a and 312b and the two first gas converging cavities 313a and 313b are all approximately 90° arc segments. In this preferred embodiment, the two first gas diffusion cavities 312a and 312b are approximately symmetrical about the center of the gas distribution disk 311, and the two first gas converging cavities 313a and 313b are approximately symmetrical about the center of the gas distribution disk 311. The two first gas diffusion cavities 312a and 312b and the two first gas converging cavities 313a and 313b are paired in pairs. Specifically, the first gas diffusion cavity 312a corresponds to the first gas converging cavity 313a, and the first gas diffusion cavity 312b corresponds to the first gas converging cavity 313b. The gas in the first gas diffusion cavity 312a travels along the positive direction of the first direction via... Figure 7 As shown, the upper half of the first transverse channel 31411 reaches the corresponding first gas converging cavity 313a (the positive direction is the gas flow direction, i.e., as shown). Figure 7 (in the direction indicated by the arrow pointing to the left); the gas in the first gas diffusion chamber 312b travels in the opposite direction to the first direction via, as shown by... Figure 7The lower half of the first transverse channel 31411 shown reaches the corresponding first gas converging cavity 313b (the opposite direction is the gas flow direction, i.e., as shown in the figure). Figure 7 (The direction indicated by the rightward arrow). Thus, by arranging the first gas diffusion chambers 312a and 312b and the first gas convergence chambers 313a and 313b in a cross pattern around the gas equalization disk 311, the two first gases flow in the positive and negative directions of the first direction, respectively. This effectively reduces the dead zone space of the first gas in the gas equalization disk 311, improves the uniformity of the distribution of the first gas in the entire gas equalization disk 311, and further improves the uniformity of the mixing of the first gas and the second gas. Through the symmetrically distributed first gas convergence chambers 313a and 313b, the vacuum pump 330 draws gas from both sides of the gas equalization disk 311, improving the replacement efficiency of the first gas.

[0063] Furthermore, in some embodiments of the present invention, the first gas diffusion chambers 312a and 312b can independently control the gas pressure, realize the zoned control of the flow rate of the gas outlets at different positions on the lower surface of the gas equalization disk 311, and adjust the flow rate of the gas outlets to be the same or different according to process requirements.

[0064] Furthermore, in some other embodiments of the present invention, three or more pairs of first gas diffusion chambers and first gas convergence chambers may be provided around the periphery of the gas equalization disk 311, and these first gas diffusion chambers and first gas convergence chambers still correspond one to one, so as to achieve more accurate gas flow regulation over a larger area of ​​the lower surface of the gas equalization disk 311 to meet different process requirements.

[0065] In this embodiment, on the lower surface of the gas distribution plate 311, the multiple gas outlets of the second gas delivery channel 315 are spaced apart from and preferably evenly distributed with the multiple gas outlets of the longitudinal channel 3142, thereby allowing the first gas and the second gas to be evenly introduced into the reaction chamber 100, improving the uniformity of the mixing of the first gas and the second gas.

[0066] like Figure 6As shown, the gas spray head 310 also includes a cover plate 317, which is located above the gas equalization disk 311 and forms a second gas diffusion cavity 318 between the cover plate 317 and the gas equalization disk 311. The second gas diffusion cavity 318 is connected to the second gas delivery channel 315. After the second gas diffuses through the second gas diffusion cavity 318, it flows into the reaction chamber 100 through the second gas delivery channel 315, thereby improving the uniformity of the distribution of the second gas in the entire gas equalization disk 100, and thus improving the uniformity of the mixing of the first gas and the second gas. The cover plate 317 has two first gas supply channels 3171 and two gas extraction channels 3172 around its periphery. Two first gas diffusion chambers 312a and 312b are connected to the first gas source 320 through the two first gas supply channels 3171. Two first gas converging chambers 313a and 313b are connected to the vacuum pump 330 through the two vacuum channels 3172. The first gas provided by the first gas source 320 is divided into two streams by the two first gas supply channels 3171 and flows into the two first gas diffusion chambers 312a and 312b respectively. The first gas in the two first gas converging chambers 313a and 313b is then extracted by the vacuum pump 330 through the two vacuum channels 3172. A second gas supply channel 3173 is provided in the middle of the cover plate 317, and the second gas diffusion chamber 318 is connected to the second gas source 340 through the second gas supply channel 3173.

[0067] Similar to Embodiment 1, in this embodiment, the second gas delivery channel 315 includes a first vent segment 3151, a second vent segment 3152, and a third vent segment 3153 connected sequentially from top to bottom. The aperture of the second vent segment 3152 is smaller than that of the first vent segment 3151 and the third vent segment 3153. The longitudinal channel 3142 includes a fourth vent segment 31421 and a fifth vent segment 31422 connected sequentially from top to bottom. The aperture of the fourth vent segment 31421 is smaller than that of the fifth vent segment 31422.

[0068] Based on the same inventive concept, such as Figure 1 As shown, the present invention also provides an air intake device 300, comprising: a first air supply pipe 350 connected to a first gas source 320; a second air supply pipe 360 ​​connected to a second gas source 340; an air extraction pipe 370 connected to an air extraction pump 330; and a dual-channel gas spray head 310 as described in the above embodiment, wherein the second air supply pipe 360 ​​is connected to the second air delivery channel 315, the first air supply pipe 350 is connected to the first gas diffusion chamber 312, and the air extraction pipe 370 is connected to the first gas convergence chamber 313.

[0069] The number of the first gas delivery pipes 350 is the same as the number of the first gas diffusion chambers 312, and the number of the gas extraction pipes 370 is the same as the number of the first gas gathering chambers 313. Then, the first gas provided by the first gas source 320 is delivered to the corresponding first gas diffusion chamber 312 through each of the first gas delivery pipes 350, and the first gas in each of the first gas gathering chambers 313 is extracted by the gas extraction pump 330 through the corresponding gas extraction pipes 370.

[0070] In this embodiment, when the first gas is supplied to the reaction chamber 100, the vacuum pump 330 pumps gas at a first flow rate. When the supply of the first gas to the reaction chamber 100 is stopped, the vacuum pump 330 pumps gas at a second flow rate, which is greater than the first flow rate. It is understood that, compared to the second gas supply channel 315, the first gas in the first gas supply channel 314 needs to pass through a transverse channel 3141 and a longitudinal channel 3142 to enter the reaction chamber 100. The gas flow path is longer and more tortuous, resulting in poor diffusion of the first gas in the first gas supply channel 314. Therefore, when the first gas is supplied, the vacuum pump 330 pumps gas at a smaller flow rate to promote diffusion of the first gas in the first gas supply channel 314. When the supply of the first gas is stopped, the vacuum pump 330 pumps gas at a larger flow rate to quickly remove residual first gas from the gas spray head 310, improving the replacement efficiency of the first gas. The specific values ​​of the first and second flow rates can be adjusted according to actual conditions, and this invention does not limit this.

[0071] Based on the same inventive concept, such as Figure 1 As shown, the present invention also provides a vapor deposition apparatus, comprising: a reaction chamber 100; a base 200 disposed at the bottom of the interior of the reaction chamber 100 for supporting a substrate W; an air intake device 300 as described above disposed at the top of the reaction chamber 100, opposite to the base 200, for providing reactive gas to the surface of the substrate W; and a suction ring 400 disposed on the reaction chamber 100 for evacuating air from the interior of the reaction chamber 100.

[0072] When it is necessary to discharge the residual first gas in the gas spray head 310, the gas in the first gas gathering chamber 312, the first gas delivery channel 314, and the first gas diffusion chamber 313 is evacuated by the vacuum pump 330 to increase the discharge speed of the first gas. When it is necessary to remove the second gas from the gas spray head 310, the second gas is evacuated by the vacuum ring 400 provided on the reaction chamber 100 to remove the second gas in the second gas delivery channel 315 (and the second gas diffusion chamber 318).

[0073] The first gas can be a reactive gas that is easily adsorbed or deposited in the gas delivery channel and needs to be quickly removed. If the first gas in the gas spray head 310 is emptied through the suction ring 400 in the reaction chamber 100 using the existing technology, it will take a long time, resulting in low gas replacement efficiency. The present invention, by setting a suction pump 330 connected to the first gas gathering chamber 312, can quickly empty the first gas in the gas spray head 310, thereby improving the gas replacement efficiency. The second gas can be a gas that can stay in the gas spray head 310 for a relatively long time or has a long purging time. The second gas can be emptied by the suction ring 400 set on the reaction chamber 100, and the gas replacement efficiency is within an acceptable range.

[0074] In summary, the present invention provides a dual-channel gas spray head, an air intake device, and a vapor deposition apparatus. The first gas supply channel allows for horizontal air intake, while the second gas supply channel allows for vertical air intake. These two channels are independent of each other. A first gas is supplied to the reaction chamber through the first gas supply channel, and a second gas is supplied to the reaction chamber through the second gas supply channel. This allows for the simultaneous input of two types of gases without mixing within the gas spray head, improving the uniformity of the mixing of the first and second gases within the reaction chamber. The first gas diffuses through the first gas diffusion chamber and then enters the first horizontal channel, flowing from the first horizontal channel into the first gas converging chamber, or flowing into the vertical channel and then into the reaction chamber. The first gas converging chamber is connected to the suction pump, enabling rapid suction to quickly remove and switch the first gas, thus improving the replacement efficiency of the gas spray head.

[0075] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0076] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A dual-channel gas spray head, characterized in that, The system includes a gas equalization disk, and at least one pair of first gas diffusion chambers and first gas convergence chambers are provided around the periphery of the gas equalization disk. The first gas diffusion chambers are connected to a first gas source, and the first gas convergence chambers are connected to a vacuum pump. The gas equalization disk includes a first gas delivery channel and a second gas delivery channel, wherein: The first gas delivery channel includes a transverse channel and a longitudinal channel. The transverse channel includes a first transverse channel arranged transversely inside the gas equalization plate along a first direction, and the two ends of the first transverse channel are respectively connected to the first gas diffusion chamber and the first gas convergence chamber. The longitudinal channel extends longitudinally from the first transverse channel to the lower surface of the gas equalization plate. A portion of the first gas reaches the first gas convergence chamber through the first transverse channel, and another portion of the first gas reaches the reaction chamber through the first transverse channel and the longitudinal channel. The second gas delivery channel extends longitudinally through the gas equalization plate and is spaced apart from the longitudinal channel, and the second gas reaches the reaction chamber through the second gas delivery channel.

2. The dual channel gas showerhead of claim 1, wherein, The first gas diffusion cavity and the first gas convergence cavity are arranged in an arc-shaped segment along the circumference of the gas distribution disk.

3. The dual channel gas showerhead of claim 2, wherein, The gas distribution disk is provided with a first gas diffusion cavity and a first gas convergence cavity on its periphery.

4. The dual channel gas showerhead of claim 3, wherein, The transverse channel further includes a second transverse channel arranged transversely inside the gas equalization plate along a second direction perpendicular to the first direction. The longitudinal channel extends longitudinally from the second transverse channel to the lower surface of the gas equalization plate. A portion of the first gas reaches the first gas gathering chamber via the first transverse channel and the second transverse channel, and another portion of the first gas reaches the reaction chamber via the first transverse channel, the second transverse channel and the longitudinal channel.

5. The dual channel gas showerhead of claim 4, wherein, A baffle is provided at the junction of the first gas diffusion chamber and the first gas convergence chamber. The baffle has at least one through vent hole, through which the first gas flows from the first gas diffusion chamber to the first gas convergence chamber.

6. The dual channel gas showerhead of claim 5, wherein, The gas flow rate through the vent is 3% to 5% of the gas flow rate within the first gas diffusion chamber.

7. The dual channel gas showerhead of claim 3, wherein, On the lower surface of the gas distribution plate, multiple air outlets of the second gas delivery channel are distributed at intervals with multiple air outlets of the longitudinal channel.

8. The dual channel gas showerhead of claim 3, wherein, It also includes a cover plate, which is located above the gas equalization plate and forms a second gas diffusion cavity with the gas equalization plate. The second gas diffusion cavity is connected to the second gas delivery channel.

9. The dual channel gas showerhead of claim 8, wherein, The cover plate has a first gas supply channel and a gas extraction channel on its periphery, and a second gas supply channel in the middle. The first gas diffusion chamber is connected to the first gas source through the first gas supply channel, the second gas diffusion chamber is connected to the second gas source through the second gas supply channel, and the first gas gathering chamber is connected to the gas extraction pump through the gas extraction channel.

10. The dual channel gas showerhead of claim 2, wherein, The gas distribution plate is provided with two first gas diffusion chambers and two first gas convergence chambers around its periphery. The first gas diffusion chambers and the first gas convergence chambers are spaced apart, and each first gas diffusion chamber is connected to the first gas source, and each first gas convergence chamber is connected to the vacuum pump.

11. The dual channel gas showerhead of claim 10, wherein, The two first gas diffusion chambers and the two first gas converging chambers are paired in pairs, wherein: Gas in one of the first gas diffusion chambers reaches a corresponding first gas converging chamber via a portion of the first transverse channel along the positive direction of the first direction. Gas in the other of the first gas diffusion chambers travels in the opposite direction of the first direction via a portion of the first transverse channel to the corresponding other first gas convergence chamber.

12. The dual channel gas showerhead of claim 10, wherein, On the lower surface of the gas distribution plate, multiple air outlets of the second gas delivery channel are distributed at intervals with multiple air outlets of the longitudinal channel.

13. The dual channel gas showerhead of claim 10, wherein, It also includes a cover plate, which is located above the gas equalization plate and forms a second gas diffusion cavity with the gas equalization plate. The second gas diffusion cavity is connected to the second gas delivery channel.

14. The dual channel gas showerhead of claim 13, wherein, The cover plate has two first gas delivery channels and two gas extraction channels around its periphery, and a second gas delivery channel in the middle. The two first gas diffusion chambers are connected to the first gas source through the two first gas delivery channels, the two first gas gathering chambers are connected to the gas pump through the two gas extraction channels, and the second gas diffusion chamber is connected to the second gas source through the second gas delivery channel.

15. The dual channel gas showerhead of any of claims 1-14, wherein, The second gas delivery channel includes a first vent section, a second vent section, and a third vent section connected sequentially from top to bottom. The diameter of the second vent section is smaller than that of the first vent section and the third vent section.

16. The dual channel gas showerhead of any of claims 1-14, wherein The longitudinal channel includes a fourth pore section and a fifth pore section connected sequentially from top to bottom, wherein the diameter of the fourth pore section is smaller than that of the fifth pore section.

17. An air intake device characterized by, include: The first gas supply pipe is connected to the first gas source; The second gas supply pipe is connected to the second gas source; An air extraction pipe connects to an air pump. The dual-channel gas spray head as described in any one of claims 1 to 16, wherein the second gas supply pipe is connected to the second gas delivery channel, the first gas supply pipe is connected to the first gas diffusion chamber, and the gas extraction pipe is connected to the first gas convergence chamber.

18. The air intake device of claim 17, wherein, The number of the first gas delivery pipes is the same as the number of the first gas diffusion chambers, and the number of the gas extraction pipes is the same as the number of the first gas gathering chambers.

19. The air intake device of claim 17, wherein, When the first gas is supplied to the reaction chamber, the pump operates at a first flow rate; when the supply of the first gas to the reaction chamber is stopped, the pump operates at a second flow rate, which is greater than the first flow rate.

20. A vapour deposition apparatus comprising: include: reaction chamber; A base, disposed at the bottom of the interior of the reaction chamber, for supporting the substrate; an air intake device as described in any one of claims 17 to 19, disposed at the top of the reaction chamber, opposite to the base, for providing reactive gas to the surface of the substrate; and an air extraction ring, disposed on the reaction chamber, for extracting air from the interior of the reaction chamber.

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