Gas supply system, processing apparatus, gas supply method, and method for manufacturing semiconductor device

Abstract

A technique is provided to ensure that the gas supply from each gas supply line to the processing chamber is consistent. The technique includes: multiple gas supply lines connected to the processing chamber, each having an inlet valve for gas inflow, a reservoir for gas storage through the inlet valve, and an outlet valve for gas outflow from the reservoir; and an adjustment unit provided on at least one of the multiple gas supply lines, which adjusts the flow resistance of the gas supply lines to ensure that the gas supply from each gas supply line to the processing chamber is consistent.

Description

Technical Field

[0001] This invention relates to a gas supply system, a processing apparatus, a gas supply method, and a method for manufacturing a semiconductor device. Background Technology

[0002] Semiconductor manufacturing apparatuses manufacture semiconductor devices as processing devices. Examples of such semiconductor manufacturing apparatuses include devices for processing multiple substrates (Patent Documents 1 and 2). Furthermore, Patent Documents 1 and 2 describe a process where, when processing substrates by supplying gas to a processing chamber through piping from two systems, the gas is alternately and repeatedly deposited into a container provided in each piping and released into the processing chamber. However, it is sometimes difficult to ensure that the amount of gas supplied to the processing chamber from each system is the same. Existing technical documents Patent documents

[0003] Patent Document 1: Japanese Patent Application Publication No. 2022-052622 Patent Document 2: International Publication No. 2024-194952 Summary of the Invention

[0004] This disclosure provides a technique for ensuring a consistent supply of gas from various gas supply lines to the processing chamber.

[0005] According to one aspect of this disclosure, a technology is provided that has: Multiple gas supply lines connected to the processing chamber have inlet valves for gas inflow, gas reservoirs for gas storage as it passes through the inlet valves, and outlet valves for gas outflow from the reservoirs; and An adjustment section is provided on at least one of the plurality of gas supply lines, which adjusts the flow resistance of the gas supply line so that the gas supply amount supplied to the processing chamber by each of the gas supply lines is consistent. Invention Effects

[0006] According to this disclosure, it is possible to make the gas supply from each gas supply line to the processing chamber consistent. Attached Figure Description

[0007] Figure 1 This is a schematic diagram illustrating the general configuration of a substrate processing apparatus according to one embodiment of the present disclosure. Figure 2 This is a schematic configuration diagram of the controller of a substrate processing apparatus according to one embodiment of the present disclosure, and is a diagram of the control system of the controller shown in block diagram. Figure 3 This is a timing diagram illustrating an example of the opening and closing timing of each valve in a substrate processing apparatus according to an embodiment of the present disclosure. Figure 4A This is a schematic diagram representing the ideal state of each gas supply pipeline. Figure 4B This is an example intended to illustrate the actual state of each gas supply pipeline. Figure 5 It means that it was used Figure 4B A diagram showing the gas supply volume for each gas supply pipeline. Figure 6A This is a schematic diagram showing the general configuration of the substrate processing apparatus using the gas supply lines of the comparative example. Figure 6B This is a schematic diagram showing the general configuration of a substrate processing apparatus using the various gas supply lines of the embodiments. Figure 6C It means that it was used Figure 6A as well as Figure 6B A diagram showing the gas supply volume for each gas supply pipeline. Figure 7A This is a schematic diagram showing a modified gas supply pipeline. Figure 7B This is a schematic diagram showing a modified gas supply pipeline. Figure 7C This is a schematic diagram showing the general configuration of a substrate processing apparatus using a modified gas supply pipeline. Figure 7D This is a schematic diagram showing the general configuration of a substrate processing apparatus using a modified gas supply pipeline. Figure 8 This is a schematic diagram showing a modified gas supply pipeline. Explanation of reference numerals in the attached figures 2··· Processing chamber, 93A, 93B··· Inlet side valves, 95A··· First container (retention section), 95B··· Second container (retention section), 97A, 97B··· Outlet side valves, 47A··· First gas supply line (gas supply line), 47B··· Second gas supply line (gas supply line), 60··· Adjustment section. Detailed Implementation

[0008] [The form of this disclosure] The following is mainly based on Figures 1-5 This is to illustrate the nature of this disclosure. Furthermore, the accompanying drawings used in the following description are schematic diagrams, and the dimensional relationships and scales of the elements shown in the drawings may not necessarily correspond to reality. Additionally, the dimensional relationships and scales of the elements in multiple drawings may not necessarily be consistent with each other.

[0009] Figure 1The schematic diagram shows the general configuration of a substrate processing apparatus 1, which is a processing apparatus according to one embodiment of the present disclosure.

[0010] Inside the processing chamber 2 where the substrate 31 is moved in and processed, two nozzles are provided for releasing gas into the chamber, namely, a first nozzle 56A and a second nozzle 56B. Gas is supplied to the first nozzle 56A from a gas supply source 72A. Gas is supplied to the second nozzle 56B from a gas supply source 72B. The gas flow route from the gas supply source 72A to the first nozzle 56A is a first gas supply line (hereinafter referred to as "first supply line") 47A. The gas flow route from the gas supply source 72B to the second nozzle 56B is a second gas supply line (hereinafter referred to as "second supply line") 47B. Furthermore, the first supply line 47A and the second supply line 47B of this embodiment are examples of multiple gas supply lines in this disclosure. In the figures, the arrows marked "A" and "B" indicate the gas flow directions in the first supply line 47A and the second supply line 47B, respectively. Additionally, the gas supply sources 72A and 72B can be a single supply source. Furthermore, gas supply sources 72A and 72B can be sources of the same type of gas or sources of different types of gas. On the other hand, an exhaust passage 66 is provided downstream of the processing chamber 2 for discharging the processed gas.

[0011] The processing chamber 2 can be configured as a reaction tube in a longitudinal furnace. In this case, multiple substrates 31 are arranged in multiple layers within the processing chamber 2. First nozzle 56A and second nozzle 56B can inject gas from the sides of the substrates 31 to form a gas flow parallel to the surfaces of each of the multiple substrates 31. As an example, first nozzle 56A and second nozzle 56B can also be configured symmetrically with reference to a plane perpendicular to a substrate 31 passing through its center. The processing chamber 2 is depressurized to below 100 Pa by a vacuum pump connected to the exhaust channel 66.

[0012] On the first supply line 47A, with the gas supply source 72A as the upstream end, and from the first nozzle 56A as the downstream end, a mass flow controller (hereinafter referred to as "MFC") 100A, serving as a flow controller, an inlet-side valve 93A serving as a first inlet, a first container 95A (hereinafter referred to as "first container") serving as a storage section, and an outlet-side valve 97A serving as a first outlet are connected in series. Additionally, the first supply line 47A has a piping 48A. The gas supply source 72A, MFC 100A, inlet-side valve 93A, first container 95A, outlet-side valve 97A, and first nozzle 56A are connected via piping 48A. A pressure sensor 94A is installed on piping 48A in the section between the inlet-side valve 93A and the first container 95A.

[0013] On the second supply line 47B, with the gas supply source 72B as the upstream end, and from the upstream end to the downstream end of the second nozzle 56B, the following components are connected in series: an MFC 100B, an inlet-side valve 93B serving as the second inlet, a second container 95B serving as the storage section (hereinafter referred to as the "second container"), and an outlet-side valve 97B serving as the second outlet. A pressure sensor 94B is installed in the flow path between the inlet-side valve 93B and the second container 95B. The second supply line 47B also has a piping 48B. The gas supply source 72B, MFC 100B, inlet-side valve 93B, second container 95B, outlet-side valve 97B, and second nozzle 56B are connected via piping 48B. A pressure sensor 94B is installed on the section of piping 48B between the inlet-side valve 93B and the second container 95B.

[0014] The first container 95A and the second container 95B have substantially equal volumes, respectively storing gases supplied from gas supply sources 72A and 72B via MFCs 100A and 100B. Furthermore, by releasing the gases in a pulsed manner with a large flow rate for a shorter time than the storage time, the surface of the substrate 31 is uniformly exposed to the gas. This gas supply method is sometimes effective for forming films on substrates 31 with patterns such as deep trenches whose width is smaller than the mean free path of the gas, achieving good uniformity and step coverage. Additionally, this gas supply method is sometimes preferably performed with an error of less than 1%, for example, relative to a standard flow rate or velocity per unit time (e.g., 1 minute or 1 second).

[0015] If inlet valves 93A and 93B are open, gas with a constant mass flow rate flows from MFCs 100A and 100B into containers 95A and 95B, respectively. Conversely, if gas accumulates in containers 95A and 95B, pressure sensors 94A and 94B detect a pressure increase in the flow path. Based on this pressure increase detection, controller 41 (described later) closes inlet valves 93A and 93B, thereby stopping the flow of gas into containers 95A and 95B.

[0016] An outlet valve 97A is installed on the first supply line 47A that connects the gas supply source 72A to the first nozzle 56A that releases gas into the processing chamber 2, and controls the release of gas from the first nozzle 56A.

[0017] The outlet valve 97B is located on the second supply line 47B that connects the gas supply source 72B to the second nozzle 56B that releases gas into the processing chamber 2, and controls the release of gas from the second nozzle 56B.

[0018] The gases supplied from gas supply sources 72A and 72B to processing chamber 2 can be, for example, the same type of gas. As an example, the gas supplied to processing chamber 2 is a gaseous gas (raw material gas) that is vaporized or sublimated as a raw material. Alternatively, the raw material gas can also be a mixture with an inactive gas (carrier gas, etc.) (mixed gas).

[0019] The gas stored in the first container 95A is released into the processing chamber 2 via the first supply line 47A and the first nozzle 56A through the opening of the outlet side valve 97A. On the other hand, the gas stored in the second container 95B is released into the processing chamber 2 via the second supply line 47B and the second nozzle 56B through the opening of the outlet side valve 97B.

[0020] When the same gas is stored in containers 1 (95A) and 2 (95B) and supplied to processing chamber 2 from various gas supply lines, to ensure consistent flow rates across the gas supply lines, the volumes between the inlet and outlet valves must be identical. Therefore, all gas supply lines must be configured with the same piping shape. Furthermore, Figure 4A The diagram shows an ideal piping configuration where all gas supply lines are configured with the same piping shape. However, as... Figure 4B As shown, the actual routing of the gas supply lines 48A and 48B from gas supply sources 72A and 72B to processing chamber 2 often results in the piping shapes of the gas supply lines not being identical. Therefore, the inventors have developed a technique that, even in cases like this... Figure 4B As shown, even when the piping shapes of the gas supply pipelines cannot be the same, that is, when the volumes of the inlet valve and the outlet valve are inconsistent, the gas supply volume can be made consistent over a fixed period of time by adjusting the gas flow rate or flow rate.

[0021] like Figure 4BAs shown, in this embodiment, the volume of the first supply line 47A from the inlet valve 93A to the outlet valve 97A is different from the volume of the second supply line 47B from the inlet valve 93B to the outlet valve 97B. Therefore, an adjustment section 60 is provided on at least one of the gas supply lines, the first supply line 47A and the second supply line 47B. The adjustment section 60 is a piping component in the gas supply line that has the function of adjusting the flow path resistance. Furthermore, the term "volume" in the gas supply line here refers to the volume from the inlet valve to the outlet valve. Hereinafter, XA represents the volume of the first supply line 47A, and XB represents the volume of the second supply line 47B. In addition, the term "flow path resistance" in the gas supply line here refers to the flow path resistance in the area from the reservoir to the outlet valve. Hereinafter, YA represents the flow resistance of the first supply line 47A, and YB represents the flow resistance of the second supply line 47B.

[0022] In this embodiment, the adjustment unit 60 ensures that the gas supply amounts from the first supply line 47A and the second supply line 47B to the processing chamber 2 are consistent. Specifically, the adjustment unit 60 is a piping component configured such that, through at least one of the gas supply lines 47A and 47B, the gas supply amounts from the first supply line 47A and the second supply line 47B to the processing chamber 2 are consistent for at least a fixed period of time. Furthermore, the term "gas supply amount" here refers to the cumulative amount of gas supplied (also called released) to the processing chamber 2. Figure 5 Because it is difficult to accurately set the gas supply amount from the first supply line 47A and the second supply line 47B to the processing chamber 2 to zero error, the gas supply amount may be slightly inconsistent within a fixed time period. Therefore, "consistency of supply amount" as used here refers to the case where the difference in gas supply amount between the gas supply lines within a fixed time period is less than ±10%, for example, within ±3%. Furthermore, the difference in gas supply amount between the gas supply lines within a fixed time period is preferably within ±1%, as described above.

[0023] In addition, the cases where the volumes XA and XB of each gas supply line are different include at least one of the following: the piping length from the inlet valve 93A to the first container 95A in the first supply line 47A is different from the piping length from the inlet valve 93B to the second container 95B in the second supply line 47B; the piping length from the first container 95A to the outlet valve 97A is different from the piping length from the second container 95B to the outlet valve 97B; and the volume of the first container 95A is different from the volume of the second container 95B.

[0024] In this embodiment, such as Figure 4B As shown, an adjustment section 60 is provided in the second supply line 47B. Specifically, the adjustment section 60 is located between the second container 95B and the outlet valve 97B in the second supply line 47B.

[0025] The adjusting section 60 is a connecting pipe (so-called a joint pipe) that connects the pipes constituting the second supply line 47B to each other. Examples of connecting pipes include elbow pipes, corrugated pipes, and reducing pipes. Furthermore, in this embodiment, an elbow pipe is used as the connecting pipe. In addition to elbow pipes, pipes bent at angles such as 45° and 180° can also be used as connecting pipes, that is, pipes whose travel path is altered.

[0026] In this embodiment, as an example, two adjusting sections 60 are provided between the second container 95B and the outlet valve 97B. The second supply line 47B is connected to the second container 95B and the outlet valve 97B by three pipes 48B1, 48B2, and 48B3 constituting the piping 48B. Pipe 48B1 connects the second container 95B and the first adjusting section 60. Pipe 48B2 connects the first adjusting section 60 and the second adjusting section 60. Pipe 48B3 connects the second adjusting section 60 and the outlet valve 97B.

[0027] Here, use Figure 5 To explain and by Figure 4B The relationship between volumes XA, XB, and flow path resistance shown corresponds to the consistency of the gas supply over a fixed time period. Furthermore, Figure 4B The example shown is an embodiment and will be derived from... Figure 4B The example shown, in which the adjustment section 60 is removed, is illustrated as a comparative example. In the comparative example, the flow resistance of each gas supply line is almost the same, and the volumes XA and XB are in the relationship that the first supply line 47A < the second supply line 47B. Therefore, regarding the gas supply amount, the second supply line 47B has more than the first supply line 47A. Thus, in this embodiment, by providing the adjustment section 60 in the second supply line 47B, the flow resistance of the second supply line 47B is adjusted (increased). Figure 5This indicates the gas supply amount in the first supply line 47A and the second supply line 47B. As shown in the embodiment, based on the relationship that the first supply line 47A < the second supply line 47B in volume XA, XB, the flow path resistance is adjusted by the adjustment unit 60 to a relationship where the first supply line 47A < the second supply line 47B, increasing the flow path resistance of the second supply line 47B. This ensures that the gas supply amount is consistent within a fixed time period. Specifically, the design adjusts the flow path resistance between containers 95A, 95B and outlet valves 97A, 97B based on the difference in volume XA, XB. Therefore, even if there is a volume difference between the gas supply lines, the flow path resistance imparts a difference to the gas supply rate, thereby ensuring that the gas supply amount is consistent within a fixed time period. Furthermore, when the volumes XA and XB are greater than those of the first supply line 47A and the second supply line 47B, the flow path resistance can be made higher than that of the second supply line 47B simply by providing an adjustment section 60 on the first supply line 47A.

[0028] Therefore, the actual piping from the gas supply source to the processing chamber 2 will not result in each gas supply line having the same volume, causing any one of them to have an increased volume. At this time, by using the adjustment unit 60, the gas supply volume of each gas supply line can be made consistent within a specified time.

[0029] In addition, the substrate processing apparatus 1 has a controller 41 that controls the operation of each part. Figure 2 This section outlines the controller 41. The controller 41, serving as a processing unit (processing mechanism), is configured as a computer having a CPU (Central Processing Unit) 41a, RAM (Random Access Memory) 41B, a storage device 41c, and an I / O port 41d. The RAM 41B, storage device 41c, and I / O port 41d are configured to exchange data with the CPU 41a via an internal bus 41e. The controller 41 is configured to connect to, for example, an input / output device 411 configured as a touch panel or the like, and an external storage device 412.

[0030] The storage device 41c is configured, for example, as a flash memory or a hard disk drive (HDD). The storage device 41c contains readable storage of control programs for controlling the operation of the substrate processing apparatus 1, process parameters including the order and conditions of substrate processing, and correction methods. Additionally, the RAM 41B is configured as a temporary storage area (working area) for storing programs and data read by the CPU 41a.

[0031] Based on the aforementioned pressure sensors 94A, 94B and MFC100A, 100B, I / O port 41d is connected to solenoid valve 92, which opens and closes inlet side valves 93A and 93B respectively.

[0032] The controller 41 controls the inlet valve 93A and the outlet valve 97A, and the inlet valve 93B and the outlet valve 97B to alternately and repeatedly perform the accumulation of gas into the first container 95A and the second container 95B and the release from the first container 95A and the second container 95B.

[0033] For the first supply line 47A, controller 41 calculates the gas supply rate based on the volume XA from the inlet valve 93A through the first container 95A to the outlet valve 97A, and the flow resistance from the first container 95A to the outlet valve 97A. Similarly, for the second supply line 47B, controller 41 calculates the gas supply rate based on the volume XB from the inlet valve 93B through the second container 95B to the outlet valve 97B, and the flow resistance from the second container 95B to the outlet valve 97B. Furthermore, controller 41 can predict the time required to make the calculated gas supply rates consistent. Additionally, controller 41 can arbitrarily display information on the display device, including the gas supply rate of the first supply line 47A within a fixed time, the gas supply rate of the second supply line 47B within a fixed time, the difference between the various gas supply rates, the time required to make the calculated gas supply rates consistent, and the prediction result (prediction result of whether the gas supply rates are consistent or inconsistent). Therefore, the timing for ensuring a consistent gas supply across all gas supply pipelines can be adjusted via the regulating unit. For example, Figure 5 In the case shown, an adjustment unit is further added to the second supply line 47B, thereby further increasing the flow path resistance and shortening the time required to make the gas supply volume of each gas supply line consistent. In addition, when the volumes XA and XB are the same in each gas supply line, the controller 41 can also display on the display device that the adjustment of the flow path resistance based on the adjustment unit 60 is not required.

[0034] Furthermore, the controller 41 is not limited to being configured as a dedicated computer, but can also be configured as a general-purpose computer. For example, an external storage device 412 (such as a USB memory or a semiconductor memory card, etc.) storing the aforementioned program can be prepared, and the program can be installed on a general-purpose computer using such an external storage device 412, thereby configuring the controller 41 of this embodiment. Furthermore, the method of supplying the program to the computer is not limited to supplying it via the external storage device 412. For example, a communication mechanism such as the Internet or a dedicated line can be used to supply the program without using the external storage device 412. Furthermore, the storage device 41c and the external storage device 412 are configured as computer-readable recording media. Hereinafter, these will be collectively referred to as recording media. Furthermore, in this specification, the term "recording media" includes cases where only the storage device 41c is included, cases where only the external storage device 412 is included, and cases where both are included.

[0035] <Opening and closing timing of each valve> Next, while referring to Figure 3 The timing diagram illustrates the opening and closing timing of each valve in the substrate processing apparatus 1 of this embodiment. Furthermore, Figure 3 In the diagram, "O" indicates the valve is open, "C" indicates the valve is closed, and "..." indicates any state.

[0036] First, at time T1, inlet valves 93A and 93B are opened to allow gas to accumulate in containers 95A and 95B. Then, at time T2, inlet valves 93A and 93B are closed, maintaining the accumulation at a predetermined pressure. Then, at time T3, if controller 41 opens outlet valves 97A and 97B when both containers 95A and 95B are full of gas, the gas accumulated in container 95A is released from outlet valve 97A through first supply line 47A and from first nozzle 56A to processing chamber 2, while the gas accumulated in container 95B is released from outlet valve 97B through second supply line 47B and from second nozzle 56B to processing chamber 2. Furthermore, the release of gas from first nozzle 56A and gas from second nozzle 56B does not need to occur simultaneously; an appropriate time difference can be set (the same applies below). Furthermore, the gas supply time to processing chamber 2 is, for example, less than one minute (a few seconds to tens of seconds, for example). Therefore, it is desirable to determine the adjustment unit to ensure that the gas supply volume of each gas supply line is consistent during the gas supply time to processing chamber 2. Then, at time T4, outlet valves 97A and 97B are closed to vent the processing chamber 2. At this time, purge gas or other film-forming gases may also be supplied from other supply systems not shown in the figure.

[0037] The controller 41 of the substrate processing apparatus 1 in this embodiment is configured to open the outlet valve 97A when a predetermined amount of gas is stored in the first container 95A and open the outlet valve 97B when a predetermined amount of gas is stored in the second container 95B.

[0038] The series of actions from time T1 to time T4 is performed more than once, thereby exposing the substrate 31 to gas and achieving substrate processing such as film formation. Moreover, the series of actions can be repeated multiple times while rotating the substrate 31.

[0039] <Variation Example> like Figure 6A As shown, when the volumes XA and XB are in the relationship that the first supply line 47A > the second supply line 47B, the gas supply amount of the first supply line 47A is greater than that of the second supply line 47B. In this case, as... Figure 6B As shown, the adjustment unit 60 is installed in the first supply line 147A. Figure 6B In this example, a reducing pipe is used as the adjusting section 60. Figure 6B The first supply line 147A, which is equipped with an adjustment section 60, is relative to... Figure 6A The first supply line 47A, which does not have an adjustment section 60, such as Figure 6C As shown, the gas supply is consistent with the second supply line 47B within the target time (fixed time). On the other hand, as... Figure 6C As shown, Figure 6A The gas supply amounts of the first supply line 47A and the second supply line 47B, which do not have an adjustment unit 60, are inconsistent with those of the second supply line 47B within the target time. Therefore, when the volumes XA and XB are different, by installing an adjustment unit 60 on at least one of the multiple gas supply lines, the gas supply amounts of each gas supply line can be made consistent.

[0040] Figure 7A In this configuration, four adjusting sections 60 (elbowed pipes) are provided on the second supply line 247B. These adjusting sections 60 are connected via pipes 48B1, 48B2, 48B3, 48B4, and 48B5. Thus, more than three adjusting sections 60 can also be provided on the second supply line 47B. By using multiple adjusting sections 60, the gas supply rates of the first supply line 47A and the second supply line 47B can be quickly synchronized.

[0041] like Figure 7B As shown in the second supply line 347B, it is also possible to have two adjustment sections 60 (elbow piping) between the inlet valve 93B and the second container 95B of the second supply line 47B. By using multiple adjustment sections 60 in this way, the gas supply of the first supply line 47A and the second supply line 47B can be quickly synchronized.

[0042] exist Figure 6B In the modified example shown, an adjustment part 60 (reducing pipe) is provided on the first supply line 147A, but this disclosure is not limited to this configuration. It could also be, for example... Figure 7C As shown in the first supply line 247A, there is another adjustment section 60 (elbow piping) between the inlet-side valve 93A and the first container 95A. By using the adjustment section 60 with a different configuration in this way, the gas supply of the first supply line 247A and the second supply line 47B can be quickly made consistent.

[0043] exist Figure 6B In the modified example shown, an adjusting part 60 (reducing pipe) is provided on the first supply line 147A. Alternatively, based on this, as... Figure 7DThe second supply line 447B shown has an adjustment section 60 (elbow piping). That is, an adjustment section 60 can be provided on each gas supply line.

[0044] Alternatively, for example, it can also be, such as Figure 8 As shown in the second supply line 547B, the volume of the second container 95B is made smaller than the volume of the first container 95A. By making the volume of the second container 95B smaller than the volume of the first container 95A, the gas supply volume of each gas supply line can be made consistent. In other words, by making its volume smaller than that of the first container 95A, the second container 95B can function as an adjustment unit 60. Furthermore, in this case, the outlet valves 97A and 97B can be, for example, configured as constant level valves that function as flow regulating valves. Additionally, Figure 8 In the example shown, since the volume of the second container 95B is adjusted, there is no need to install an adjustment part between the second container 95B and the outlet valve 97A. The flow resistance can be adjusted, and the gas supply amount within a fixed time can be made consistent across the gas supply lines.

[0045] Furthermore, the adjusting section 60 is not limited to elbow piping. A pipe with a diameter smaller than that of the connected piping can also be used as the adjusting section 60. Additionally, a piping with a throttling orifice can also be used as the adjusting section 60. By adjusting the diameter of this small-diameter section (throttling orifice), the flow path cross-sectional area can be adjusted. In other words, the throttling orifice (small-diameter section) of the adjusting section 60 can be considered as the part that adjusts the flow path cross-sectional area.

[0046] In the above embodiment, gas is supplied to the processing chamber 2 from two gas supply lines, the first supply line 47A and the second supply line 47B, but this disclosure is not limited to this configuration. For example, gas may be supplied to the processing chamber 2 from three or more gas supply lines. In this case, similarly to the above embodiment, by providing an adjustment section 60 relative to each gas supply line to adjust the flow path resistance, the gas supply amount within a fixed time can be made consistent across the gas supply lines.

[0047] <Substrate Processing Process> Next, a substrate processing method having defined processing steps, i.e., a semiconductor device manufacturing method, implemented using the substrate processing apparatus 1 of this embodiment, will be described. Here, the defined processing steps are exemplified by the case where a substrate processing step, which is one of the manufacturing steps of a semiconductor device, is implemented.

[0048] The substrate processing step is achieved by performing a process that includes at least a step of moving the substrate 31 into the processing chamber 2 and a step of supplying gas to the processing chamber 2 from both directions of two gas supply lines, the first supply line 47A and the second supply line 47B.

[0049] When the substrate processing step is performed, the process unfolds in a memory device (not shown), and control instructions and action instructions are given from controller 41 to process controllers and transport controllers (not shown) as needed. The substrate processing step performed in this way includes at least a loading step, a film formation step, and a unloading step.

[0050] (Moving-in process) The controller 41 causes a substrate transfer mechanism (not shown) to perform a transport process that moves the substrate 31 to the processing chamber 2. Furthermore, the number of substrates 31 moved to the processing chamber 2 may not be just one. For example, if a predetermined number of substrates 31 are loaded into a crystal boat (not shown), the crystal boat is raised by a crystal boat elevator (not shown) and loaded into the processing chamber 2 (crystal boat loading). After the crystal boat is fully loaded, the lower end of the furnace opening flange of the vertical furnace is hermetically sealed.

[0051] (Processing steps) Next, processing chamber 2 is controlled according to the instructions from controller 41 to achieve a predetermined temperature and pressure (processing pressure). Processing chamber 2 is heated by a heater (not shown) to a predetermined temperature according to the instructions from a temperature control unit (not shown). Then, the flow rate or pressure is adjusted or regulated by an on / off valve (not shown) with a pressure adjustment mechanism to achieve the predetermined temperature. Furthermore, the substrate 21 is rotated based on a rotating mechanism (not shown). While maintaining a specified pressure and temperature, a specified gas (processing gas) is supplied to the substrate 21 disposed within the processing chamber 2, and a specified process (e.g., film formation) is performed on the substrate 21. Additionally, sometimes the temperature is lowered from the processing temperature (the specified temperature) before a subsequent removal process.

[0052] In this embodiment, the specified gas (processing gas) for the film-forming process is supplied through two gas supply lines, the first supply line 47A and the second supply line 47B. Specifically, the gas supplied from gas supply sources 72A and 72B to the processing chamber 2 via the first supply line 47A and the second supply line 47B is the same, which, for example, is a gaseous gas (raw material gas) in the form of gaseous material that has been vaporized or sublimated.

[0053] In this embodiment, the raw material gas for the film-forming process is simultaneously supplied from two gas supply lines, the first supply line 47A and the second supply line 47B, at a fixed time. Specifically, during the process time of the film-forming step, the raw material gas is supplied to the processing chamber 2 from the two gas supply lines, the first supply line 47A and the second supply line 47B. That is, the process time is set to... Figure 5 A fixed time in the process.

[0054] According to this embodiment, the same raw material gas is supplied simultaneously from two gas supply lines, the first supply line 47A and the second supply line 47B, at a fixed time. Therefore, the cumulative supply amount of raw material gas can be made consistent, thereby improving the in-plane uniformity of film thickness.

[0055] Furthermore, according to this embodiment, feed gas can be supplied from two gas supply lines, the first supply line 47A and the second supply line 47B, which helps to increase the film thickness compared to the case where feed gas is supplied from a single supply line. In particular, the film formation time can be shortened in film formation with a large target film thickness.

[0056] Furthermore, according to this embodiment, the raw material gas stored in the first container 95A is released from the outlet valve 97A through the first supply line 47A and from the first nozzle 56A to the processing chamber 2 at fixed intervals. Simultaneously, the raw material gas stored in the second container 95B is released from the outlet valve 97B through the second supply line 47B and from the second nozzle 56B to the processing chamber 2 at fixed intervals. This allows the raw material gas to flow uniformly on the substrate 31 disposed within the processing chamber 2, thereby improving the in-plane uniformity of the substrate 31. Moreover, by concentrating the supply of raw material gas stored in the first container 95A and the second container 95B to the processing chamber 2, the step coverage of the high aspect ratio (3D NAND) longitudinal channel structure formed on the substrate 31 can be improved.

[0057] Furthermore, once the film formation process relative to the substrate 21 is completed, the controller 41 stops the rotation of the substrate 21 based on the rotation mechanism, performs nitrogen replacement (nitrogen replacement process) on the processing chamber 2, and restores it to atmospheric pressure.

[0058] (Transfer process) Then, the controller 41 moves the processed substrate 21 out of the processing chamber 2. The processed substrate 21 is effectively cooled, for example, by purified air blown by a purification unit (not shown). And, for example, if cooled to below 150°C, the processed substrate 21 is transferred to a carrier (wafer unloading) (not shown). If there are subsequent batches, new unprocessed substrates 21 are transferred to the wafer boat as needed.

[0059] Based on this pattern, one or more of the following effects can be obtained.

[0060] In this embodiment, the flow path resistance of at least one of the multiple gas supply lines is adjusted by the adjustment unit 60, thereby making the gas supply from each gas supply line to the processing chamber 2 consistent.

[0061] Furthermore, in this embodiment, even if there is a volume difference between the gas supply lines, the gas supply amount supplied from each gas supply line to the processing chamber 2 can be made consistent because the flow path resistance is adjusted by the adjustment unit 60.

[0062] Furthermore, in this embodiment, even if a volume difference arises between the gas supply lines due to the winding of the piping up to the processing chamber 2, the flow path resistance can be adjusted by the adjustment unit 60, thereby ensuring that the gas supply from each gas supply line to the processing chamber 2 is consistent.

[0063] In addition, in this embodiment, the supply amount of the same raw material gas (gas in the form of gaseous material that has been vaporized or sublimated) from each gas supply line can be made consistent between each gas supply line within a fixed time, thereby enabling the film formed on the substrate 31 arranged in the processing chamber 2 to have a uniform thickness.

[0064] Furthermore, in this embodiment, the supply amount of each gas supply line can be calculated cumulatively using the process time of the manufacturing process, thereby predicting the time required to make the gas supply amount consistent across the gas supply lines. This allows for adjustment of the time required to make the gas supply amount consistent.

[0065] Furthermore, according to this embodiment, the raw material gas stored in the first container 95A is released from the outlet-side valve 97A through the first supply line 47A and from the first nozzle 56A into the processing chamber 2 at fixed intervals. Simultaneously, the raw material gas stored in the second container 95B is released from the outlet-side valve 97B through the second supply line 47B and from the second nozzle 56B into the processing chamber 2 at fixed intervals. This allows the raw material gas to flow uniformly on the substrate 31 disposed within the processing chamber 2, thereby improving the in-plane uniformity of the substrate 31. Moreover, it improves step coverage for high aspect ratio (3D NAND) longitudinal channel structures.

[0066] The embodiments of this disclosure have been described in detail above, but this disclosure is not limited to the embodiments described above, and various modifications can be made without departing from its spirit. For example, the processing apparatus of this embodiment can be applied not only to semiconductor manufacturing apparatuses, but also to apparatuses for processing glass substrates, such as LCD devices. Furthermore, the film formation process includes, for example, CVD, PVD, forming oxide films, nitride films, or a combination thereof, and forming films including metals. Moreover, it can also be an annealing process, oxidation process, nitride process, diffusion process, etc.

[0067] Furthermore, the above embodiments do not limit the specific form of substrate processing. This disclosure is not limited to the case of using a batch substrate processing apparatus that processes multiple substrates at once, but is also suitable for the case of a single-sheet substrate processing apparatus that processes one or more substrates at a time. Moreover, it is also suitable for the case of using a substrate processing apparatus with a hot-wall type processing furnace to process substrates, and it is also suitable for the case of using a substrate processing apparatus with a cold-wall type processing furnace to process substrates.

[0068] Even when using these substrate processing devices, each process can be performed in the same processing sequence and processing conditions as described in the above embodiments and variations, and the same effects as described in the above embodiments and variations can be obtained.

[0069] The above-described embodiments and variations can be used in appropriate combinations. The processing order and conditions can, for example, be set to be the same as those in the above-described embodiments and variations.

Claims

1. A gas supply system, wherein, have: Multiple gas supply lines connected to the processing chamber have inlet valves for gas inflow, gas reservoirs for gas storage as it passes through the inlet valves, and outlet valves for gas outflow from the reservoirs; and An adjustment section is provided on at least one of the plurality of gas supply lines, which adjusts the flow resistance of the gas supply line so that the gas supply amount supplied to the processing chamber by each of the gas supply lines is consistent.

2. The gas supply system according to claim 1, wherein, The adjustment section is a connecting pipe that connects the pipes constituting the gas supply pipeline to each other.

3. The gas supply system according to claim 1, wherein, The adjustment section includes at least one of elbow piping, corrugated piping, and reducing piping.

4. The gas supply system according to claim 2, wherein, The adjusting section has a smaller diameter section than the diameter of the connected piping.

5. The gas supply system according to claim 4, wherein, The small-diameter section is a throttling orifice.

6. The gas supply system according to claim 2, wherein, The adjustment section includes a part that adjusts the cross-sectional area of ​​the flow path.

7. The gas supply system according to claim 1, wherein, When the volumes of the gas supply lines from the inlet valve through the reservoir to the outlet valve differ, the gas supply volume of each gas supply line is made consistent by adjusting the flow path resistance of the gas supply lines based on the adjustment unit.

8. The gas supply system according to claim 7, wherein, The different volumes between the gas supply lines include at least one of the following: different lengths of the piping connecting the inlet valve to the reservoir; different lengths of the piping connecting the reservoir and the outlet valve; and different volumes of the reservoir.

9. The gas supply system according to claim 7, wherein, The adjustment section is located between the storage section and the outlet valve.

10. The gas supply system according to claim 8, wherein, If the volume from the inlet valve through the reservoir to the outlet valve is the same across all the gas supply lines, the adjustment of the flow path resistance based on the adjustment unit is omitted.

11. The gas supply system according to claim 1, wherein, Two or more of the aforementioned adjustment sections are located between the inlet valve, the reservoir, and the outlet valve.

12. The gas supply system according to claim 11, wherein, The adjustment unit is located in each of the gas supply pipelines.

13. The gas supply system according to claim 1, wherein, The adjustment section includes the storage section.

14. The gas supply system according to claim 11, wherein, The outlet-side valve is a constant water level valve.

15. The gas supply system according to claim 1, wherein, It has three or more of the aforementioned gas supply lines.

16. The gas supply system according to claim 1, wherein, The gases supplied to the processing chamber from the multiple gas supply pipelines are all of the same type. The gas is a gaseous form of raw material that has been vaporized or sublimated.

17. The gas supply system according to claim 1, wherein, It also has a processing department. The processing unit is configured to calculate the gas supply amount of each of the gas supply lines based on the volume from the inlet valve through the reservoir to the outlet valve and the flow path resistance from the reservoir to the outlet valve.

18. A processing apparatus comprising a gas supply system, wherein, The gas supply system has the following features: Multiple gas supply lines connected to the processing chamber have inlet valves for gas inflow, gas reservoirs for gas storage as it passes through the inlet valves, and outlet valves for gas outflow from the reservoirs; and An adjustment section is provided on at least one of the plurality of gas supply lines, which adjusts the flow resistance of the gas supply line so that the gas supply amount supplied to the processing chamber by each of the gas supply lines is consistent.

19. A gas supply method, wherein gas is supplied through a gas supply system, wherein, The gas supply system has the following features: Multiple gas supply lines connected to the processing chamber have inlet valves for gas inflow, gas reservoirs for gas storage as it passes through the inlet valves, and outlet valves for gas outflow from the reservoirs; and An adjustment section is provided on at least one of the plurality of gas supply lines, which adjusts the flow resistance of the gas supply line so that the gas supply amount supplied to the processing chamber by each of the gas supply lines is consistent.

20. A method for manufacturing a semiconductor device, wherein, The process includes supplying the gas using the gas supply method of claim 19 and processing the object to be processed.

Images