Nanoparticles, optoelectronic devices, and electronic devices

Abstract

This application discloses a nanoparticle, an optoelectronic device, and an electronic device. The nanoparticle includes a core and a shell covering the core. The core is made of a first metal oxide, and the shell is made of one or more of a first metal sulfide and a polymer. The nanoparticle has good solution processing performance and performance stability. The nanoparticle can be used to prepare optoelectronic devices, which is beneficial to improving the performance stability of optoelectronic devices.

Description

Technical Field

[0001] This application relates to the field of optoelectronic technology, specifically to a nanoparticle, an optoelectronic device, and an electronic device. Background Technology

[0002] Nanoparticles, with their small size, high specific surface area, high reactivity, and unique photoelectric and thermal properties, have been widely used in optoelectronics, catalysis, medicine, and environmental protection. The morphology and size of nanoparticles are important factors influencing their performance and applications.

[0003] Nanoparticles have a large number of defect states and tend to aggregate in solution, resulting in poor film quality in solution-based methods and negatively impacting the performance of devices using nanoparticles. Summary of the Invention

[0004] In view of the shortcomings of the prior art, this application provides a nanoparticle, an optoelectronic device, and an electronic device.

[0005] The technical solution of this application is as follows:

[0006] In a first aspect, this application provides a nanoparticle comprising a core and a shell covering the core, wherein the core is made of a first metal oxide and the shell is made of one or more of a first metal sulfide and a polymer.

[0007] In a second aspect, this application provides an optoelectronic device, including an anode and a cathode disposed opposite to each other, and a plurality of functional layers disposed between the anode and the cathode, wherein at least one of the plurality of functional layers is made of nanoparticles as described in the first aspect.

[0008] Thirdly, this application provides an electronic device, which includes a power supply component and an optoelectronic device as described in the first aspect, wherein the power supply component and the optoelectronic device are electrically connected.

[0009] This application provides nanoparticles, optoelectronic devices, and electronic devices, which have the following technical effects:

[0010] In the nanoparticles, the shell can effectively passivate the defect states of the first metal oxide, improve the performance stability of the first metal oxide, and effectively improve the problem of "aggregation" of the first metal oxide in solution. The nanoparticles have good solution processing performance, conductivity and performance stability. Attached Figure Description

[0011] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0012] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application. Detailed Implementation

[0013] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0014] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0015] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. Various embodiments of this application may exist in the form of a range; it should be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as a rigid limitation on the scope of the invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0016] In the description of this application, the term "comprising" means "including but not limited to".

[0017] The term "at least one" refers to one or more items, while "multiple" or "multi-item" refers to two or more items. The terms "at least one," "at least one of the following," or similar expressions refer to any combination of these items, including any combination of single or multiple items. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can be single or multiple.

[0018] The term "and / or" encompasses any one of two or more of the listed items, as well as any and all combinations of the listed items. These combinations include any two listed items, any number of listed items, or a combination of all listed items. For example, "A and / or B" includes three parallel solutions: A, B, and A+B. Similarly, the technical solution "A, and / or, B, and / or, C, and / or, D" includes any one of A, B, C, and D (i.e., all connected by "logical OR"), any and all combinations of A, B, C, and D, including combinations of any two or three of A, B, C, and D, and combinations of all four of A, B, C, and D (i.e., all connected by "logical AND").

[0019] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0020] This application provides a nanoparticle comprising a core and a shell enclosing the core. The core is made of a first metal oxide, and the shell is made of one or more of a first metal sulfide and a polymer.

[0021] In the nanoparticles of this application embodiment, the shell can effectively passivate the defect states of the first metal oxide, improve the performance stability of the first metal oxide, and effectively improve the problem of "aggregation" of the first metal oxide in solution. The nanoparticles have good solution processing performance, conductivity and performance stability.

[0022] In the nanoparticles of this application embodiment, the shell can be one or more layers.

[0023] To further improve the electron mobility of nanoparticles, in some embodiments of this application, the first metal oxide includes ZnO, TiO2, SnO2, and formula A. (1-x) M x One or more of the compounds shown in O, x is greater than zero and not greater than 0.5 each time it appears, A and M are different, and A and M are each independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In, Fe, Mn and Y each time it appears.

[0024] In some embodiments of this application, formula A (1-x) M x The compound shown in O is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where x is greater than zero and not greater than 0.2 each time it appears.

[0025] To further improve the conductivity and performance stability of nanoparticles, in some embodiments of this application, the first metal sulfide includes one or more of Group IIA, Group IIIA, Group IVA, and transition metal sulfides. Specifically, Group IIA metal sulfides include, but are not limited to, one or more of MgS and CaS; Group IIIA metal sulfides include, but are not limited to, one or more of Ga₂S₃ and In₂S₃; Group IVA metal sulfides include, but are not limited to, one or more of SnS and PbS; and transition metal sulfides include, but are not limited to, one or more of CdS, MoS₂, WS₂, and NiS. It should be noted that when the metal element in the first metal sulfide is Mo or W, compared to MoS₃ or WS₃, using MoS₂ or WS₂ as the first metal sulfide can further improve the performance stability and carrier mobility of the nanoparticles.

[0026] To further improve the conductivity and solution processing performance of the nanoparticles, in some embodiments of this application, the polymer is selected from one or more of polyaniline, polypyrrole, polyvinylpyrrolidone, polyacetylene, polythiophene, polyphenylene sulfide, poly(p-phenylenevinylene) and polybenzothiazole.

[0027] In some embodiments of this application, the average hydrated particle size of the nanoparticles is 8nm to 20nm, for example, it can be 8nm to 18nm, 8nm to 16nm, 8nm to 14nm, 8nm to 10nm, 10nm to 20nm, or 10nm to 18nm.

[0028] In some embodiments of this application, the average hydrated particle size of the nucleus is 2nm to 15nm, for example, 2nm, 5nm, 8nm, 10nm, 12nm, 15nm or any two of the aforementioned values.

[0029] In some embodiments of this application, the shell material includes a first metal sulfide, and the first metal oxide is selected from ZnO and Zn. (1-x) Mg x One or more of O and SnO2, x is greater than zero and not greater than 0.2; the first metal sulfide is selected from one or more of MoS2, WS2 and In2S3, and the nanoparticles have good electron mobility and solution processing performance.

[0030] Furthermore, in the nanoparticles, the molar ratio between the metal element in the first metal oxide and the sulfur element in the first metal sulfide is 1:(0.2~1), for example, it can be 1:0.2, 1:0.5, 1:0.8, 1:1 or any two of the aforementioned values, to ensure that the shell has a good coating effect on the core while further improving the conductivity of the nanoparticles.

[0031] In other embodiments of this application, the nanoparticles include a core, an intermediate shell, and an outer shell arranged sequentially in the radial direction from the inside to the outside. The core is made of the first metal oxide, the intermediate shell is made of the first metal sulfide, and the outer shell is made of the polymer. This can further improve the dispersion performance of the nanoparticles in the solvent, and the nanoparticles have good crystallinity and conductivity.

[0032] Furthermore, in the nanoparticles, the molar ratio between the metal element in the first metal oxide and the sulfur element in the first metal sulfide is 1:(0.2~1), for example, it can be 1:0.2, 1:0.5, 1:0.8, 1:1 or any two of the aforementioned values, to ensure that the intermediate shell has a good coating effect on the core while further improving the conductivity of the nanoparticles.

[0033] Furthermore, in some embodiments of this application, the average thickness of the intermediate shell is 1 nm to 5 nm, for example, it can be 1 nm, 3 nm, 5 nm or any two of the aforementioned values. On the one hand, this ensures that the intermediate shell has a good coating effect on the core to improve the photoelectric properties of the nanoparticles. On the other hand, it is beneficial to further improve the conductivity of the nanoparticles.

[0034] In some embodiments of this application, the mass ratio between the first metal oxide and the polymer is 1:(0.01 to 0.3), for example, it can be 1:0.01, 1:0.05, 1:0.1, 1:0.2, 1:0.3 or any two of the aforementioned values, which can further improve the conductivity and photoelectric response performance of the nanoparticles.

[0035] Furthermore, in some embodiments of this application, the average thickness of the outer shell is 1 nm to 5 nm, for example, it can be 1 nm, 3 nm, 5 nm or any two of the aforementioned values. On the one hand, this ensures that the polymer can form a continuous conductive network on the outer surface of the intermediate shell, thereby further improving the conductivity of the nanoparticles. On the other hand, it is beneficial to further improve the photoelectric response performance of the nanoparticles.

[0036] In some embodiments of this application, the first metal oxide is selected from ZnO, Zn (1-x) Mg x One or more of O and SnO2, x is greater than zero and not greater than 0.2, the first metal sulfide is selected from one or more of MoS2, WS2 and In2S3, and the polymer is selected from one or more of polyaniline, polypyrrole, polyacetylene and poly(p-phenylenevinylene) to give the nanoparticles a suitable carrier mobility.

[0037] This application provides a method for preparing nanoparticles, which can be used to prepare nanoparticles as described above. The method for preparing nanoparticles includes the steps of: mixing and reacting a first metal oxide and a first compound in a solvent to form a shell on the surface of the first metal oxide to obtain nanoparticles; wherein, the first compound includes one or more of a monomer for synthesizing a polymer and a first precursor for synthesizing a first metal sulfide, the first precursor including a metal salt and a sulfur source, wherein the metal element of the metal salt is the same as the metal element of the first metal sulfide. The first metal oxide, polymer, and first metal sulfide are described above.

[0038] In the above-described method for preparing nanoparticles, a shell is formed on the surface of the first metal oxide to passivate surface defect states and improve the crystallinity of the first metal oxide. When the first compound includes monomers for synthesizing polymers, an in-situ polymerization process is used to form a polymer-containing shell on the surface of the first metal oxide. The first compound also includes other raw materials capable of achieving the in-situ polymerization reaction, such as oxidants.

[0039] In some embodiments of this application, the solvent is selected from one or more of C1-C10 alcohols and C1-C10 alcohol ethers, such as methanol, ethanol, ethylene glycol, propanol, butanol, pentanol, and ethylene glycol monomethyl ether.

[0040] In the above-mentioned methods for preparing nanoparticles, the metal salt can be an inorganic salt or an organometallic compound. Inorganic salts include, but are not limited to, one or more of metal oxyacid salts, metal halides, metal sulfates, metal carbonates, metal nitrates, and metal phosphates. Organometallic compounds can be one or more of organic salts and organic complexes. The anions constituting the organic salt include, but are not limited to, carboxylate ions with 2 to 20 carbon atoms. Examples of carboxylate ions with 2 to 20 carbon atoms include oxalate ions, acetate ions, citrate ions, lactate ions, stearate ions, tetradecanoate ions, or oleate ions. Taking molybdenum as an example, the metal salt includes, but is not limited to, one or more of sodium molybdate, ammonium molybdate tetrahydrate, and ammonium thiomolybdate.

[0041] To further improve the conductivity and performance stability of nanoparticles, in some embodiments of this application, the metal element in the metal salt includes one or more of Group IIA, Group IIIA, Group IVA and transition metal elements, and the metal element in the metal salt is selected from one or more of Mg, Ca, Ga, In, Sn, Pb, Cd, Mo, W and Ni.

[0042] In the above-mentioned methods for preparing nanoparticles, the sulfur source includes, but is not limited to, one or more of sodium sulfide, thioacetamide, thiourea, and L-cysteine.

[0043] In some embodiments of this application, the first compound is selected from the first precursor, and the metal element in the metal salt includes one or more of Mo, W, and In. For example, the first metal oxide is selected from ZnO and Zn. (1-x) Mg xOne or more of O and SnO2, x is greater than zero and not greater than 0.2, and the first metal sulfide is selected from one or more of MoS2, WS2 and In2S3, which makes the nanoparticles have good electron mobility and solution processing performance.

[0044] Furthermore, in some embodiments of this application, the molar ratio between the metal element in the metal salt and the sulfur element in the sulfur source is 1:(0.5-3), for example, it can be 1:0.5, 1:1, 1:2, 1:3 or any two of the aforementioned values; and / or, the molar ratio between the metal element in the first metal oxide and the sulfur element in the sulfur source is 1:(0.2-1), for example, it can be 1:0.2, 1:0.5, 1:0.8, 1:1 or any two of the aforementioned values, ensuring that the shell has a good coating effect on the core while further improving the photoelectric properties of the nanoparticles.

[0045] In some embodiments of this application, the first compound comprises a monomer, with 0.3 mmol to 7 mmol of monomer added for every 100 mg of the first metal oxide.

[0046] Furthermore, in some embodiments of this application, the mixing reaction is carried out at 40°C to 200°C, for example, 40°C to 180°C, 40°C to 150°C, 40°C to 120°C, 40°C to 100°C, 40°C to 80°C, or 80°C to 120°C; and / or, the mixing reaction time is 10 min to 4 h, for example, 10 min to 3 h, 10 min to 2 h, 10 min to 60 min, or 10 min to 30 min, so that the shell has a good coating effect on the core, and the average hydrated particle size of the nanoparticles is within a suitable range, and the crystallinity of the nanoparticles is improved.

[0047] In other embodiments of this application, the reaction of the first metal oxide and the first compound in a solvent includes the following steps:

[0048] S1. Provide a first solution containing a first metal oxide, mix the first solution and a first precursor to carry out a first reaction to form an intermediate shell on the surface of the first metal oxide, wherein the material of the intermediate shell includes a first metal sulfide, and obtain a second solution.

[0049] S2. The second solution and monomer are mixed to carry out a second reaction to form a shell on the surface of the intermediate shell layer. The shell material includes polymers to obtain nanoparticles.

[0050] To ensure that the intermediate shell has a good coating effect on the core to improve the photoelectric properties of nanoparticles, in some embodiments of this application, in the step of mixing the first solution and the first precursor for synthesizing the first metal sulfide to carry out the first reaction, the molar ratio between the metal element in the first metal oxide and the sulfur element in the sulfur source is 1:(0.2~1), for example, it can be 1:0.2, 1:0.5, 1:0.8, 1:1 or any two of the aforementioned values.

[0051] In some embodiments of this application, the molar ratio between the metal element in the metal salt and the sulfur element in the sulfur source is 1:(0.5 to 3), for example, it can be 1:0.5, 1:1, 1:2, 1:3 or any range between the two aforementioned values.

[0052] In some embodiments of this application, the first reaction is carried out at 40°C to 200°C, for example, 40°C to 180°C, 40°C to 150°C, 40°C to 120°C, 40°C to 100°C, 40°C to 80°C, or 80°C to 120°C; and / or, the first reaction time is 10 min to 4 h, for example, 10 min to 3 h, 10 min to 2 h, 10 min to 60 min, or 10 min to 30 min, so that the intermediate shell has a good coating effect on the core, and the thickness of the intermediate shell is controlled within a suitable range, and the crystallinity of the core and the intermediate shell is improved.

[0053] In some embodiments of this application, in the step of mixing the second solution and the monomer to carry out the second reaction, 0.3 mmol to 7 mmol of monomer is added for every 100 mg of the first metal oxide. On the one hand, this ensures that the polymer formed by in-situ polymerization can form a continuous conductive network on the outer surface of the intermediate shell, thereby further improving the conductivity of the nanoparticles. On the other hand, it is beneficial to further improve the photoelectric response performance of the nanoparticles.

[0054] Furthermore, in some embodiments of this application, the second reaction is carried out at 40°C to 120°C, for example, 40°C to 100°C, 40°C to 80°C, or 40°C to 60°C; and / or, the second reaction time is 10 min to 4 h, for example, 10 min to 3 h, 10 min to 2 h, 10 min to 60 min, or 10 min to 30 min, so that the outer shell has a good coating effect on the intermediate shell and core, and controls the average hydrated particle size of the nanoparticles within a suitable range, and improves the crystallinity of the nanoparticles.

[0055] In some embodiments of this application, the first metal oxide is selected from ZnO, Zn (1-x) Mg xOne or more of O and SnO2, x is greater than zero and not greater than 0.2; the first metal sulfide is selected from one or more of MoS2, WS2 and In2S3; the polymer is selected from one or more of polyaniline, polypyrrole and poly(p-phenylenevinylene).

[0056] In some embodiments of this application, the preparation method of the first solution includes the following steps:

[0057] S11. Provide a third solution and a fourth solution, wherein the third solution contains a second precursor of the metal element in the first metal oxide, and the fourth solution contains a base;

[0058] S12. Mix the third solution and the fourth solution to carry out the third reaction and obtain the first solution.

[0059] In step S11, the metal element of the metal precursor is selected from one or more of Group IA metals, Group IIA metals, Group IIIA metals, Group IVA metals, Group VA metals and transition metals. For example, the metal element of the metal precursor is selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ca, Ga, Li, Y and In.

[0060] The second precursor can be an inorganic salt or an organometallic compound. Inorganic salts include, but are not limited to, metal oxyacid salts, metal halides, metal sulfates, metal carbonates, metal nitrates, or metal phosphates. Taking zinc as an example, the selectable inorganic salts include, but are not limited to, one or more of zinc halides, zinc nitrates, zinc sulfates, zinc carbonates, and zinc phosphates. Taking tin as an example, the selectable inorganic salts include, but are not limited to, one or more of tin halides (e.g., tin chloride), tin nitrates, and tin sulfates.

[0061] The organometallic compound can be one or more of an organic salt and an organic complex. The anion constituting the organic salt includes, but is not limited to, a carboxylate ion with 2 to 20 carbon atoms, such as oxalate, acetate, citrate, lactate, stearate, tetradecanoate, or oleate. Taking zinc as an example in the second precursor, the selectable organic salts include, but are not limited to, one or more of zinc stearate, zinc acetate, zinc tetradecanoate, zinc oleate, zinc citrate, and zinc lactate. The selectable organic complexes include, but are not limited to, zinc acetylacetonate. Taking tin as an example in the second precursor, the selectable organic salts include, but are not limited to, one or more of tin acetate, tin stearate, tin oleate, and tin oxalate. The selectable organic complexes include, but are not limited to, tin acetylacetonate. The concentration of the metal element in the third solution is, for example, 0.01 mmol / mL to 0.5 mmol / mL.

[0062] The base includes one or more of organic and inorganic bases. Inorganic bases include, but are not limited to, one or more of alkali metal oxides, alkali metal hydroxides, alkali metal bicarbonates, alkali metal carbonates, alkaline earth metal oxides, alkaline earth metal hydroxides, alkaline earth metal bicarbonates, and ammonia water. Examples of inorganic bases selected from lithium hydroxide, sodium hydroxide, potassium hydroxide, calcium hydroxide, sodium oxide, potassium oxide, calcium oxide, sodium carbonate, sodium bicarbonate, potassium carbonate, potassium bicarbonate, and calcium bicarbonate are included. Organic bases include, but are not limited to, one or more of alkanolamines, alkyl ammonium hydroxides, and urea. The alkyl group in alkyl ammonium hydroxide contains 1 to 20 carbon atoms. Examples of alkyl ammonium hydroxides selected from tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, and tetrabutyl ammonium hydroxide are included. Alkanolamines selected from ethanolamine, diethanolamine, and triethanolamine are included. The concentration of the base in the fourth solution is, for example, 0.008 mmol / mL to 2.5 mmol / mL.

[0063] In some embodiments of this application, the solvents of the first solution, the third solution, and the fourth solution are each independently selected from one or more of C1-C10 alcohols and C1-C10 alcohol ethers. As an example, the solvents of the first solution, the third solution, and the fourth solution are each independently selected from one or more of methanol, ethanol, ethylene glycol, propanol, butanol, pentanol, and ethylene glycol monomethyl ether.

[0064] In step S12, the step of mixing the third solution and the fourth solution to carry out the third reaction can be to add the third solution to the fourth solution or to add the fourth solution to the third solution. For example, the fourth solution can be added to the third solution by dropping or injecting, or the third solution can be added to the fourth solution by dropping or injecting, so as to control the nucleation rate and nucleation quality of crystallization.

[0065] In step S12, the third reaction can be carried out in an inert gas atmosphere, including but not limited to nitrogen, helium, argon, krypton, xenon or neon.

[0066] In some embodiments of this application, the third reaction is carried out at a temperature of 25°C to 80°C, for example, 25°C, 30°C, 40°C, 50°C, 60°C, 70°C, 80°C or any two of the aforementioned values, and / or the reaction time of the third reaction is 1h to 5h.

[0067] In order to further improve the yield of the first metal oxide, in some embodiments of this application, in the step of mixing the third solution and the fourth solution, the molar ratio between the second precursor and the base is 1:(0.8 to 5), for example, it can be 1:0.8, 1:1, 1:2, 1:3, 1:4, 1:5 or any value between the two aforementioned ratios.

[0068] To further improve the purity of the first metal oxide, in some embodiments of this application, after the third reaction step and before the step of obtaining the first solution, the method for preparing the first solution further includes the step of: separating and purifying the reaction product obtained from the third reaction to obtain a solid-state purified first metal oxide, and then dispersing the purified first metal oxide in the solvent of the first solution. The separation and purification includes one or more of precipitation and solid-liquid separation steps, including but not limited to sedimentation, filtration, and evaporation. Sedimentation includes but is not limited to gravity sedimentation, centrifugal sedimentation, and electromagnetic sedimentation, and filtration includes but is not limited to reverse osmosis, membrane filtration, nanofiltration, ultrafiltration, and microfiltration.

[0069] To further improve the purity of the obtained nanoparticles, in some embodiments of this application, after the first reaction step and before the step of obtaining the second solution, the method for preparing nanoparticles further includes the steps of: mixing the reaction product obtained from the first reaction with a first precipitant, then performing solid-liquid separation, collecting the first precipitate, and dispersing the first precipitate in a first solvent to obtain a second solution. The solid-liquid separation is as described above, and an example of solid-liquid separation is centrifugation. The first precipitant is, for example, an ester compound with the general formula R1-COO-R2, where R1 and R2 are independently selected from C1 to C5 alkyl groups. The first precipitant includes, but is not limited to, one or more of ethyl formate, propyl formate, butyl formate, methyl acetate, ethyl acetate, and butyl acetate.

[0070] To further improve the purity of the obtained nanoparticles, in some embodiments of this application, after the second reaction step and before the step of obtaining nanoparticles, the method for preparing nanoparticles further includes the step of: mixing the reaction product obtained from the second reaction with a second precipitant, then performing solid-liquid separation, collecting a second precipitate containing nanoparticles. The solid-liquid separation is as described above, and an example of solid-liquid separation is centrifugation. The second precipitant is, for example, an ester compound with the general formula R1-COO-R2, and includes, but is not limited to, one or more of ethyl formate, propyl formate, butyl formate, methyl acetate, ethyl acetate, and butyl acetate.

[0071] This application also provides a thin film, the material of which includes any of the nanoparticles described above, or nanoparticles prepared by any of the nanoparticle preparation methods described above, and the thin film has good surface smoothness and density.

[0072] In some embodiments of this application, the surface roughness Ra of the thin film is 2.0 nm to 3.6 nm, for example, it can be 2.0 nm, 2.3 nm, 2.5 nm, 2.8 nm, 3.0 nm, 3.3 nm, 3.6 nm or any value between the two aforementioned values.

[0073] In some embodiments of this application, the average thickness of the thin film is 15nm to 45nm, for example, it can be 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or any two of the aforementioned values.

[0074] This application also provides a method for preparing a thin film, which can be used to prepare any of the thin films described above. The method includes the steps of: depositing a dispersion containing nanoparticles, drying the deposited dispersion to form a film, and obtaining a thin film; wherein the nanoparticles are as described above. It should be noted that, based on the fact that nanoparticles have quantum-level size and high crystallinity, they can be formed at low temperatures (annealing temperature not exceeding 100°C) to avoid defects such as charge traps and pinholes, and the resulting thin film has good electron transport properties.

[0075] Specifically, the deposition method of the dispersion includes, but is not limited to, one or more of the following: spin coating deposition, inkjet printing deposition, blade coating deposition, dip-coating deposition, immersion deposition, spraying deposition, roller coating deposition, casting deposition, slot coating deposition, and strip coating deposition.

[0076] In some embodiments of this application, the dispersion medium of the dispersion is selected from one or more of water, alkanes, aromatic hydrocarbons, halogenated hydrocarbons, alcohols, ethers, ketones, esters, furans, pyridines, amides, and sulfones. The alkanes include, but are not limited to, one or more of nonane, decane, dodecane, terpenes, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane, and cyclopentane; and / or the aromatic hydrocarbons include, but are not limited to, one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene, butylbenzene, and 1-methylnaphthalene or indene; and / or the halogenated hydrocarbons include, but are not limited to, one or more of dichloromethane, chloroform, and carbon tetrachloride; and / or the alcohols include, but are not limited to, one or more of methanol, ethanol, propanol, butanol, ethylene glycol, and glycerol; and / or the ethers include... However, the dispersion medium is not limited to one or more of ethylene glycol monomethyl ether, diethyl ether, and propylene oxide, and / or the ketone compounds include, but are not limited to, one or more of acetone, butanone, and N-methylpyrrolidone, and / or the ester compounds include, but are not limited to, one or more of ethyl formate, ethyl acetate, and propyl acetate, and / or the furan compounds include, but are not limited to, one or more of tetrahydrofuran and 2-methylfuran, and / or the pyridine compounds include, but are not limited to, pyridine, and / or the amide compounds include, but are not limited to, N,N-dimethylformamide, and / or the sulfone compounds include, but are not limited to, dimethyl sulfoxide. As an example, the dispersion medium is selected from one or more of toluene, chlorobenzene, chloroform, carbon tetrachloride, dimethyl sulfoxide, N,N-dimethylformamide, tetrahydrofuran, N-methylpyrrolidone, tetrahydronaphthalene, and chloronaphthalene.

[0077] In order to further improve the density of the film and ensure that the film has a high surface smoothness, in some embodiments of this application, the concentration of nanoparticles in the dispersion is 10 mg / mL to 40 mg / mL, for example, it can be 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL or any two of the aforementioned values.

[0078] In some embodiments of this application, the drying method of the deposited dispersion is selected from one or more of heat treatment and vacuum drying.

[0079] This application also provides an optoelectronic device, which includes, but is not limited to, a light-emitting device, a solar cell, or a photodetector. The optoelectronic device can be an upright structure or an inverted structure, such as... Figure 1As shown, the optoelectronic device 10 includes an anode 101 and a cathode 102 disposed opposite to each other, and a plurality of functional layers disposed between the anode 101 and the cathode 102. At least one of the multiple functional layers comprises nanoparticles as described above, or nanoparticles prepared by any of the methods described above, or at least one of the multiple functional layers is a thin film as described above, which can improve the device efficiency, device lifetime, and performance stability of the optoelectronic device 10.

[0080] In some embodiments of this application, see further reference. Figure 1 The multiple functional layers include an electronic functional layer 104. The material of the electronic functional layer 104 includes any of the nanoparticles described above, or nanoparticles prepared by any of the nanoparticle preparation methods described above, or the electronic functional layer 104 is a thin film described above. This allows the electronic functional layer 104 to have suitable electron mobility and good performance stability, promote electron-hole transport balance, and reduce interface defects between the electronic functional layer 104 and adjacent film layers. It effectively suppresses nonradiative charge recombination and interface energy loss, which is beneficial for realizing effective generation and recombination of electron-hole pairs in the optoelectronic device 10. This improves the device efficiency and performance stability of the optoelectronic device 10, and also improves the response speed and efficiency of the optoelectronic device 10.

[0081] The electronic functional layer 104 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 104 is, for example, 10 nm to 100 nm. As an example, the electronic functional layer 104 is a single-layer structure and is an electron transport layer.

[0082] In some embodiments of this application, when the multiple functional layers include a light-emitting layer 103, and the multiple functional layers also include an electronic functional layer 104, please refer to the following: Figure 1 The light-emitting layer 103 is disposed between the electronic functional layer 104 and the anode 101. The material of the light-emitting layer 103 includes one or more of organic light-emitting materials and light-emitting quantum dots, and the average thickness of the light-emitting layer 103 is, for example, 10 nm to 100 nm.

[0083] Among them, organic light-emitting materials include, but are not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridinium(III), 4,4',4”-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0084] The luminescent quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots. Furthermore, the luminescent quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The shell of a core-shell quantum dot may have one or more shells. The average hydrated particle size of the luminescent quantum dots can be, for example, 2 nm to 20 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or any value between any two of the aforementioned values.

[0085] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0086] For inorganic perovskite quantum dots, the general structural formula is AMX3, where A is Cs. + M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - or I - .

[0087] For organic perovskite quantum dots, the general structural formula is CMX3, where C is a formamidinyl group and M is a divalent metal cation, which may include, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - or I - .

[0088] For organic-inorganic hybrid perovskite quantum dots, the general structural formula is BMX3, where B is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - or I - .

[0089] When the material of the light-emitting layer 103 includes light-emitting quantum dots, in order to improve the solution processing performance of the light-emitting quantum dots and further enhance the device efficiency of the optoelectronic device 10, in some embodiments of this application, ligands are also attached to the surface of the light-emitting quantum dots. The ligands can be common ligands in the art, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0090] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30 Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0091] To further improve the photoelectric performance and device lifespan of the optoelectronic device 10, further reference is made to some embodiments of this application. Figure 1 When multiple functional layers include a hole functional layer 105, and multiple functional layers also include a light-emitting layer 103, please refer to [the relevant documentation]. Figure 1 A hole functional layer 105 is disposed between the light-emitting layer 103 and the anode 101. The hole functional layer 105 can be a single-layer structure or a multi-layer structure, and the average thickness of the hole functional layer 105 is, for example, 10 nm to 100 nm. When the hole functional layer 105 is a multi-layer structure, the hole functional layer 105 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For a hole functional layer 105 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 101 than the electron blocking layer; for a hole functional layer 105 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 101 than the electron blocking layer; for a hole functional layer 105 including a hole injection layer and a hole transport layer, the hole injection layer is closer to the anode 101 than the hole transport layer.

[0092] The hole functional layer 105 is made of one or more of organic materials, a first inorganic material, and a second inorganic material. The organic materials include, but are not limited to, poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (…). CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl) -Co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthalene) N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,One or more of the following: 7-diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobisfluorene (Spiro-omeTAD, CAS No. 207739-72-8); and / or, a first inorganic material package. This includes, but is not limited to, one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the second inorganic compound material includes one or more doped second compounds, wherein the host compound of the doped second compound is selected from graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide, and the doping element of the doped second compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals, and the molar amount of the doping element accounts for no more than 50% of the total molar amount of the doped second compound.

[0093] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, and second metal oxides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The second metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3.

[0094] The anode 101 or cathode 102 can also be a composite electrode with a sandwich-like structure. The upper and lower layers are independently selected from a second metal oxide or a second metal sulfide, and the middle layer is a metal, such as one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the middle layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 300 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 300 nm.

[0095] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the multiple functional layers or on the side of the cathode 102 away from the multiple functional layers. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0096] It should be noted that the preparation methods for each film layer in optoelectronic devices include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. After the various functional layers of the optoelectronic device are prepared, an encapsulation process is required. Encapsulation can be performed using common machine encapsulation or manual encapsulation. In the encapsulation environment, the oxygen and water content are both below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of UV adhesive, metal film and glass adhesive. For example, the encapsulation material is acrylic resin or epoxy resin.

[0097] This application also provides an electronic device, which includes a power supply component and an optoelectronic device as described above, wherein the power supply component and the optoelectronic device are electrically connected. The electronic device can be any electronic product with a display function, including but not limited to smartphones, tablet computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0098] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0099] Material Example 1

[0100] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. The nanoparticle has a core-shell structure. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polyaniline.

[0101] The preparation method of nanoparticles in this embodiment includes the following steps:

[0102] S1.1 Provide a first solution containing SnO2 nanoparticles: Disperse 60 mg of SnO2 nanoparticles (average hydrated particle size of 8 nm) in 2 mL of ethanol to obtain the first solution;

[0103] S1.2 Preparation of a second solution containing SnO2 / MoS2 nanoparticles: Add 2 mmol of sodium sulfide and 1 mmol of ammonium molybdate tetrahydrate to the first solution, react at 40 °C for 20 min to obtain the first reaction product, add ethyl acetate (the volume ratio of the first reaction product to ethyl acetate is 1:4) to the first reaction product, then centrifuge at 3000 r / min for 10 min, collect the first precipitate, disperse the first precipitate in 10 mL of ethanol to obtain the second solution;

[0104] S1.3 Preparation of nanoparticles with SnO2 / MoS2 / polyaniline structure: 2 mmol of aniline and 0.5 mmol of ammonium persulfate were added to the second solution to obtain a reaction system. The reaction system was then heated to 120℃ and reacted for 1 h to obtain a second reaction product. After the second reaction product cooled, ethyl acetate was added to the second reaction product to precipitate the precipitate. After the precipitate stopped precipitating, the addition of ethyl acetate was stopped. The mixture was centrifuged at 6000 r / min for 10 min and the second precipitate was collected. The second precipitate contained nanoparticles.

[0105] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0106] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating a dispersion containing nanoparticles (the concentration of nanoparticles is 30 mg / mL, and the dispersion medium is ethanol) on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at a constant temperature of 80°C for 30 min to obtain a thin film.

[0107] Material Example 2

[0108] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polyaniline.

[0109] Compared to the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that "adding 2 mmol of aniline to the second solution" in step S1.3 is replaced with "adding 0.2 mmol of aniline to the second solution".

[0110] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0111] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0112] Material Example 3

[0113] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polyaniline.

[0114] Compared to the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that "adding 2 mmol of aniline to the second solution" in step S1.3 is replaced with "adding 4 mmol of aniline to the second solution".

[0115] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0116] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0117] Material Example 4

[0118] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polypyrrole.

[0119] Compared to the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that "adding 2 mmol of aniline to the second solution" in step S1.3 is replaced with "adding 2 mmol of pyrrole to the second solution".

[0120] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0121] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0122] Material Example 5

[0123] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of poly(p-phenylenevinyl chloride).

[0124] Compared to the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that step S1.3 is replaced by "adding 2 mmol of styrene and 0.5 mmol of methyl 2-bromopropionate to the second solution to obtain a reaction system, then heating the reaction system to 80°C and reacting for 2 hours to obtain a second reaction product. After the second reaction product cools down, ethyl acetate is added to the second reaction product to precipitate the precipitate. After the precipitate no longer precipitates, the addition of ethyl acetate is stopped, and the mixture is centrifuged at 6000 r / min for 10 min to collect the second precipitate, which contains nanoparticles."

[0125] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0126] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0127] Material Example 6

[0128] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polyaniline.

[0129] Compared to the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that the step S1.2, "adding 2 mmol of sodium sulfide and 1 mmol of ammonium molybdate tetrahydrate to the first solution", is replaced with "adding 6 mmol of sodium sulfide and 3 mmol of ammonium molybdate tetrahydrate to the first solution".

[0130] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0131] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0132] Material Example 7

[0133] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of MoS2, and the outer shell is made of polyaniline.

[0134] Compared with the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that the step S1.2, "adding 2 mmol of sodium sulfide and 1 mmol of ammonium molybdate tetrahydrate to the first solution", is replaced with "adding 10 mmol of sodium sulfide and 5 mmol of ammonium molybdate tetrahydrate to the first solution".

[0135] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0136] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0137] Material Example 8

[0138] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), the intermediate shell is made of tungsten disulfide (WS2), and the outer shell is made of polyaniline.

[0139] Compared with the preparation method of nanoparticles in Material Example 1, the only difference in the preparation method of nanoparticles in this example is that the step S1.2, "adding 2 mmol of sodium sulfide and 1 mmol of ammonium molybdate tetrahydrate to the first solution", is replaced with "adding 2 mmol of thiourea and 1 mmol of tungsten hexachloride to the first solution".

[0140] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0141] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0142] Material Example 9

[0143] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. In the radial direction from the inside to the outside, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially. The core is made of ZnO (with an average hydrated particle size of 5 nm), the intermediate shell is made of In2S3, and the outer shell is made of polyaniline.

[0144] The preparation method of nanoparticles in this embodiment includes the following steps:

[0145] S2.1. Provide a first solution containing ZnO nanoparticles: Disperse 200 mg of ZnO nanoparticles (average hydrated particle size of 5 nm) in 5 mL of ethanol to obtain a first solution;

[0146] S2.2 Preparation of a second solution containing ZnO / In2S3 nanoparticles: Add 2 mmol of sodium sulfide and 1 mmol of indium chloride to the first solution, react at room temperature for 20 min to obtain the first reaction product, add ethyl acetate (the volume ratio of the first reaction product to ethyl acetate is 1:4) to the first reaction product, then centrifuge at 3000 r / min for 10 min, collect the first precipitate, disperse the first precipitate in 10 mL of ethanol to obtain the second solution;

[0147] S2.3 Preparation of nanoparticles with ZnO / In2S3 / polyaniline structure: 2 mmol of aniline and 0.5 mmol of ammonium persulfate were added to the second solution to obtain a reaction system. The reaction system was then heated to 120℃ and reacted for 1 h to obtain a second reaction product. After the second reaction product cooled, ethyl acetate was added to the second reaction product to precipitate the precipitate. After the precipitate stopped precipitating, the addition of ethyl acetate was stopped. The mixture was centrifuged at 6000 r / min for 10 min and the second precipitate was collected. The second precipitate contained nanoparticles.

[0148] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0149] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0150] Material Example 10

[0151] This embodiment provides nanoparticles, thin films, and their preparation methods. In the radial direction from the inside out, the nanoparticles include a core, an intermediate shell, and an outer shell arranged sequentially. The core material includes Zn. 0.85 Mg 0.15 O (average hydrated particle size is 5 nm), the middle shell material includes MoS2, and the outer shell material includes polyaniline.

[0152] The preparation method of nanoparticles in this embodiment includes the following steps:

[0153] S3.1, Provides Zn 0.85 Mg 0.15 The first solution for O nanoparticles: 200 mg of Zn 0.85 Mg 0.15 O (average hydrated particle size of 5 nm) was dispersed in 5 mL of ethanol to obtain the first solution;

[0154] S3.2, Preparation of Zn 0.85 Mg 0.15The second solution of O / MoS2 nanoparticles: 2 mmol of sodium sulfide and 1 mmol of ammonium molybdate tetrahydrate were added to the first solution and reacted at room temperature for 20 min to obtain the first reaction product. Ethyl acetate was added to the first reaction product (the volume ratio of the first reaction product to ethyl acetate was 1:4), and then the mixture was centrifuged at 3000 r / min for 10 min to collect the first precipitate. The first precipitate was dispersed in 10 mL of ethanol to obtain the second solution.

[0155] S3.3, Preparation of Zn 0.85 Mg 0.15 Nanoparticles composed of O / MoS2 / polyaniline structure: 2 mmol of aniline and 0.5 mmol of ammonium persulfate were added to the second solution to obtain a reaction system. The reaction system was then heated to 120℃ and reacted for 1 h to obtain a second reaction product. After the second reaction product cooled, ethyl acetate was added to the second reaction product to precipitate the precipitate. After the precipitate stopped precipitating, the addition of ethyl acetate was stopped. The mixture was centrifuged at 6000 r / min for 10 min and the second precipitate was collected. The second precipitate contained nanoparticles.

[0156] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0157] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0158] Material Example 11

[0159] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. The nanoparticle has a core-shell structure. In the radial direction from the inside to the outside, the nanoparticle includes a core and a shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), and the shell is made of polyaniline.

[0160] The preparation method of nanoparticles in this embodiment includes the following steps:

[0161] S3.1. Prepare a first solution containing SnO2 nanoparticles by referring to step S1.1 in Material Example 1;

[0162] S3.2 Preparation of nanoparticles with SnO2 / / polyaniline structure: 2 mmol of aniline and 0.5 mmol of ammonium persulfate were added to the first solution to obtain a reaction system. The reaction system was then heated to 120℃ and reacted for 1 h to obtain a reaction product. After the reaction product cooled, ethyl acetate was added to the reaction product to precipitate the precipitate. After the precipitate stopped precipitating, the addition of ethyl acetate was stopped. The mixture was centrifuged at 6000 r / min for 10 min and the solid was collected. The solid contained SnO2 / / polyaniline nanoparticles.

[0163] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0164] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0165] Material Example 12

[0166] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. The nanoparticle has a core-shell structure. In the radial direction from the inside to the outside, the nanoparticle includes a core and a shell arranged sequentially. The core is made of SnO2 (with an average hydrated particle size of 8 nm), and the shell is made of MoS2.

[0167] The preparation method of nanoparticles in this embodiment includes the following steps: a second solution is prepared according to step S1.2 in material embodiment 1; ethyl acetate is added to the second solution to precipitate the precipitate; after the precipitate no longer precipitates, the addition of ethyl acetate is stopped; the solution is centrifuged at 6000 r / min for 10 min; and the precipitate is collected. The precipitate contains nanoparticles.

[0168] The material of the thin film in this embodiment includes the nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0169] The thin film preparation method in this embodiment is the same as that in Material Example 1.

[0170] Material Example 13

[0171] This embodiment provides a nanoparticle, a thin film, and a method for preparing the same. The nanoparticle has a core-shell structure. In the radial direction from the inside to the outside, the nanoparticle includes a core and a shell arranged sequentially. The core is made of ZnO (with an average hydrated particle size of 5 nm), and the shell is made of ZnS.

[0172] The preparation method of nanoparticles in this embodiment includes the following steps:

[0173] S5.1, Same as step S1.1;

[0174] S5.2 Preparation of a second solution containing SnO2 / ZnS nanoparticles: Add 2 mmol of sodium sulfide and 1 mmol of zinc acetate to the first solution, react at 40°C for 60 min to obtain the first reaction product, add ethyl acetate (the volume ratio of the first reaction product to ethyl acetate is 1:4) to the first reaction product, then centrifuge at 3000 r / min for 10 min, and collect the first precipitate, which contains nanoparticles.

[0175] Material Comparison Example 1

[0176] This comparative example provides a nanoparticle, a thin film, and a method for preparing the same. The nanoparticle is SnO2 nanoparticle (average hydrated particle size of 8 nm).

[0177] The material of the thin film in this comparative example includes SnO2 nanoparticles of this embodiment, and the average thickness of the thin film is 30 nm.

[0178] The preparation method of the thin film in this comparative example includes the following steps: providing a substrate, and spin-coating a dispersion containing SnO2 nanoparticles (the concentration of SnO2 nanoparticles is 30 mg / mL, and the dispersion medium is ethanol) on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at a constant temperature of 80°C for 30 min to obtain the thin film.

[0179] Material Comparison Example 2

[0180] This comparative example provides nanoparticles, thin films, and their preparation methods. The nanoparticles are ZnO nanoparticles (average hydrated particle size of 5 nm).

[0181] The material of the thin film in this comparative example includes the nanoparticles in this comparative example, and the average thickness of the thin film is 30 nm.

[0182] The preparation method of the thin film in this comparative example includes the following steps: providing a substrate, spin-coating a dispersion containing ZnO nanoparticles (ZnO concentration of 30 mg / mL, dispersion medium of ethanol) on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at a constant temperature of 80°C for 30 min under a nitrogen atmosphere to obtain the thin film.

[0183] Material Comparison Example 3

[0184] This comparative example provides nanoparticles, thin films, and methods for their preparation, wherein the nanoparticles are Zn. 0.85 Mg 0.15 O nanoparticles (average hydrated particle size of 5 nm).

[0185] The material of the thin film in this comparative example includes the nanoparticles in this comparative example, and the average thickness of the thin film is 30 nm.

[0186] The thin film preparation method in this comparative example includes the following steps: providing a substrate, and spin-coating a film containing Zn onto one side of the substrate under a nitrogen atmosphere at room temperature and pressure. 0.85 Mg 0.15 A dispersion of O nanoparticles (Zn) 0.85 Mg 0.15 The concentration of O was 30 mg / mL, and the dispersion medium was ethanol. Then, the film was heat-treated at 80 °C under a nitrogen atmosphere for 30 min to obtain a thin film.

[0187] Device Example 1

[0188] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1 As shown, in the direction from bottom to top, the optoelectronic device 10 includes an anode 101, a hole functional layer 105, a light-emitting layer 103, an electron functional layer 104, and a cathode 102 stacked sequentially. The hole functional layer 105 is composed of a hole injection layer 1051 and a hole transport layer 1052 stacked together, with the hole injection layer 1051 being closer to the anode 101 than the hole transport layer 1052. The electron functional layer 104 is a single-layer structure and is an electron transport layer.

[0189] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0190] The material of anode 101 includes ITO, and the average thickness of anode 101 is 100 nm;

[0191] The cathode 102 is made of Ag and has an average thickness of 80 nm.

[0192] The hole injection layer 1051 is made of PEDOT:PSS and has an average thickness of 30 nm.

[0193] The hole transport layer 1052 is made of TFB and has an average thickness of 30 nm.

[0194] The material of the light-emitting layer 103 includes CdSe / ZnS light-emitting quantum dots, the CdSe / ZnS light-emitting quantum dots emit blue light, and the average thickness of the light-emitting layer 103 is 40 nm.

[0195] The electronic functional layer 104 is made of the nanoparticles described in Material Example 1, and the average thickness of the electronic functional layer 104 is 30 nm.

[0196] The fabrication method of the light-emitting device in this embodiment includes the following steps:

[0197] S10.1 Provide a substrate (material is glass and average thickness is 1mm), sputter ITO on one side of the substrate to obtain an ITO layer, use a cotton swab dipped in a small amount of soapy water to wipe the surface of the ITO layer to remove visible impurities, and then sequentially ultrasonically clean the substrate including ITO with deionized water for 15min, ultrasonically clean with acetone for 15min, ultrasonically clean with anhydrous ethanol for 15min and ultrasonically clean with deionized water for 15min, dry it and then perform ultraviolet-ozone surface treatment for 15min to obtain a substrate containing an anode.

[0198] S10.2 Under normal temperature and pressure air environment, spin-coat PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then place it at 150℃ for constant temperature heat treatment for 15 min to obtain hole injection layer.

[0199] S10.3 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a TFB solution on the side of the hole injection layer away from the anode. The concentration of TFB in the TFB solution is 8 mg / mL and the solvent of the TFB solution is chlorobenzene. Then, place it under a nitrogen atmosphere and heat-treat at 150°C for 30 min to obtain the hole transport layer.

[0200] S10.4 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a luminescent quantum dot solution on the side of the hole transport layer away from the hole injection layer. The concentration of luminescent quantum dots in the luminescent quantum dot solution is 20 mg / mL, and the solvent of the luminescent quantum dot solution is n-octane. Then, place it in a nitrogen atmosphere and heat-treat at 80°C for 30 min to obtain the luminescent layer.

[0201] S10.5, Referring to the thin film preparation method in Example 1, an electronic functional layer is formed on the side of the light-emitting layer away from the hole transport layer;

[0202] S10.6. Place the laminated structure that has completed step S10.5 under a vacuum of no more than 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode, and then encapsulated with epoxy resin to obtain the optoelectronic device.

[0203] Device Examples 2 to Device Examples 13

[0204] Device Example n is basically the same as Device Example 1, except that: in Device Example n, the material of the electronic functional layer includes the nanoparticles in Material Example n. Correspondingly, the preparation method of the electronic functional layer in Device Example n is the same as the preparation method of the thin film in Material Example n. n is a positive integer from 2 to 13.

[0205] For example, in device embodiment 2, the material of the electronic functional layer of the optoelectronic device includes the nanoparticles in material embodiment 2, and the preparation method of the electronic functional layer is the same as that of the thin film in material embodiment 2, and so on.

[0206] Device Comparison Examples 1 to 3

[0207] The device comparative example m is basically the same as the device example 1, except that the electronic functional layer material in the device comparative example m includes the nanoparticles in the device comparative example m. Correspondingly, the preparation method of the electronic functional layer in the device comparative example m is the same as the preparation method of the thin film in the material comparative example m. m is a positive integer from 1 to 3.

[0208] For example, in Comparative Example 1, the material of the electronic functional layer of the optoelectronic device includes the nanoparticles in Comparative Example 1, and the preparation method of the electronic functional layer is based on the preparation method of the thin film in Comparative Example 1, and so on.

[0209] Experimental Example 1

[0210] The hydrated particle size of the nanoparticles in Material Examples 1 to 13 and Material Comparative Examples 1 to 3 was measured respectively. The hydrated particle size was obtained by dynamic light scattering method. The instrument used was a Malvern Zetasizer series detector. Each type of nanoparticle was dispersed in ethanol to prepare a 4 mL test solution (the concentration of nanoparticles was 0.3 mg / mL).

[0211] Table 1

[0212]

[0213]

[0214] As shown in Table 1, the hydrated particle size of the nanoparticles in Material Examples 1 to 13 is 10.2 nm to 18.4 nm. Compared with the nanoparticles in Material Comparative Examples 1 to 3, the hydrated particle size of the nanoparticles in Material Examples 1 to 15 is larger, indicating that the nanoparticles in Material Examples 1 to 15 have a shell.

[0215] Experimental Example 2

[0216] The performance of the thin films in Material Examples 1 to 13 and Material Comparative Examples 1 to 3 was tested. The surface roughness Ra of each thin film was measured using atomic force microscopy. The test results are shown in Table 2 below.

[0217] Table 2

[0218]

[0219]

[0220] As shown in Table 2, compared with material comparative examples 1 to 3, the surface roughness Ra of the films in material examples 1 to 13 is lower. Taking the film in material example 1 as an example, the Ra of the film in material example 1 is only 51% of the Ra of the film in material comparative example 1.

[0221] The higher Ra value of the film in Comparative Example 1 is due to the poor dispersion of SnO2 nanoparticles in alcohol-based organic solvents, leading to agglomeration. Furthermore, the low crystallinity of the synthesized SnO2 nanoparticles results in poor film quality. The higher Ra value of the film in Comparative Example 2 compared to that in Material Example 9, and the higher Ra value of the film in Comparative Example 3 compared to that in Material Example 10, the uncoated ZnO nanoparticles or Zn... 0.85 Mg 0.15 O nanoparticles tend to agglomerate in alcohol-based organic solvents, resulting in poor film quality.

[0222] Experimental Example 3

[0223] The performance of the optoelectronic devices in Device Examples 1 to 13 and Device Comparative Examples 1 to 3 after 1 hour of packaging was tested. The performance tests were conducted in an environment with a temperature of 25°C and a relative humidity of 50%.

[0224] The testing instruments include the Fostar FPD optical characteristic measurement equipment and the external quantum efficiency optical testing instrument. The Fostar FPD optical characteristic measurement equipment is an efficiency testing system constructed from components such as a Marine Optics USB2000, a LabVIEW-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, a 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, an efficiency testing cassette, and a data acquisition system. This system acquires the turn-on voltage (Ub) of each optoelectronic device. T Parameters such as current, brightness, and emission spectrum are obtained, and then key parameters such as external quantum efficiency and power efficiency are calculated to obtain the maximum external quantum efficiency (EQE) of each optoelectronic device. max ,%)

[0225] The formula for calculating external quantum efficiency is as follows:

[0226]

[0227] Where ηe is the optical output coupling efficiency, ηr is the ratio of recombination carriers to injected carriers, χ is the ratio of the number of excitons generating photons to the total number of excitons, and K R K is the radiation process rate. NR This represents the rate of a non-radiative process.

[0228] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, a 128-channel QLED lifetime testing system is used to perform electroluminescence lifetime analysis on each optoelectronic device, record the time (T95,h) required for each optoelectronic device to decay from maximum brightness to 95%, and calculate the time (T95@1000nit,h) required for each optoelectronic device to decay from 100% brightness to 95% brightness at 1000nit using the decay fitting formula.

[0229] The formula for calculating device lifetime is as follows:

[0230]

[0231] In the above formula, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L L The value is 1000 nits, and A is the acceleration factor, which is usually between 1.6 and 2. In this experimental example, the value of A for the optoelectronic device is 1.7.

[0232] In addition, the optoelectronic devices that have completed the above performance tests were placed in an environment with room temperature, protected from light, and a relative humidity of 50% for 10 days, and then the maximum external quantum efficiency (EQE) of each optoelectronic device was detected using the aforementioned method. max @10 days, %) and device lifetime (T95@1000nit@10 days, h).

[0233] The performance test data for each optoelectronic device are detailed in Table 3 below:

[0234] Table 3

[0235]

[0236] As shown in Table 3, compared with the optoelectronic devices in Device Comparative Examples 1 to 3, the optoelectronic devices in Device Examples 1 to 13 have superior optoelectronic performance and performance stability. Specifically, the optoelectronic devices in Device Examples 1 to 13 have higher device efficiency, device lifespan and performance stability.

[0237] This demonstrates that using nanoparticles from the embodiments of this application as materials for the electronic functional layer in optoelectronic devices can improve the electron mobility and performance stability of the electronic functional layer, reduce interface defects between the electronic functional layer and adjacent film layers, effectively suppress nonradiative charge recombination and interface energy loss, and improve the device efficiency and stability of optoelectronic devices.

[0238] The reason for the poor overall performance of the optoelectronic devices in Comparative Examples 1, 2, and 3 is that the uncoated first metal oxide has a large number of oxygen vacancies, the surface defect state density of the electronic functional layer is large, and the crystallinity is poor. This leads to serious non-radiative recombination in the optoelectronic devices, as well as low actual electron mobility and weak electron transport capability, resulting in low device efficiency, short device life, and low device performance stability.

[0239] The foregoing has provided a detailed description of the nanoparticles, optoelectronic devices, and electronic devices provided in the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are merely for the purpose of helping to understand the technical solutions and core ideas of this application. Those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions in the embodiments of this application.

Claims

1. A nanoparticle, characterized in that, The nanoparticles include a core and a shell covering the core. The core is made of a first metal oxide, and the shell is made of one or more of a first metal sulfide and a polymer.

2. The nanoparticle of claim 1, wherein, At least one of the following conditions must be met: (1) the first metal oxide comprises one or more of ZnO, Ti02, Sn02, and a compound of the formula A (1-x) M x O, x is greater than zero and not greater than 0.5 for each occurrence, A and M are not the same, and A and M are each independently selected from one or more of Zn, Ti, Sn, Ba, Ta, Al, Zr, Mg, Ga, Li, Ga, In, Fe, Mn, and Y for each occurrence; (2) The first metal sulfide includes one or more of Group IIA metal sulfides, Group IIIA metal sulfides, Group IVA metal sulfides, and transition metal sulfides; (3) The polymer is selected from one or more of polyaniline, polypyrrole, polyvinylpyrrolidone, polyacetylene, polythiophene, polyphenylene sulfide, poly(p-phenylenevinylene) and polybenzothiazole.

3. The nanoparticle of claim 2, wherein, At least one of the following conditions must be met: (1) Equation A (1-x) M x The compound shown in O is selected from Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where x is greater than zero and not greater than 0.2 each time it appears; (2) The group IIA metal sulfide is selected from one or more of MgS and CaS, and / or the group IIIA metal sulfide is selected from one or more of Ga2S3 and In2S3, and / or the group IVA metal sulfide is selected from one or more of SnS and PbS, and / or the transition metal sulfide is selected from one or more of CdS, MoS2, WS2 and NiS.

4. The nanoparticle of claim 1, wherein, The average hydrated particle size of the nanoparticles is 8 nm to 20 nm, and / or the average hydrated particle size of the core is 2 nm to 15 nm.

5. The nanoparticle of any one of claims 1 to 4, wherein the nanoparticle is characterized by, The material of the shell includes the first metal sulfide; Optionally, in the radial direction from the inside out, the nanoparticle includes a core, an intermediate shell, and an outer shell arranged sequentially, wherein the core is made of the first metal oxide, the intermediate shell is made of the first metal sulfide, and the outer shell is made of the polymer.

6. The nanoparticle of claim 5, wherein, At least one of the following conditions must be met: (1) the first metal oxide is selected from one or more of ZnO, Zn (1-x) Mg x O, and SnO2, x is greater than zero and not greater than 0.2; (2) The first metal sulfide is selected from one or more of MoS2, WS2 and In2S3; (3) In the nanoparticles, the molar ratio between the metal element in the first metal oxide and the sulfur element in the first metal sulfide is 1:(0.2~1).

7. The nanoparticle of claim 5, wherein, When the nanoparticles comprise the core, the intermediate shell, and the outer shell arranged sequentially, at least one of the following conditions is satisfied: (1) The polymer is selected from one or more of polyaniline, polypyrrole, polyacetylene and poly(p-phenylenevinylene); (2) In the nanoparticles, the mass ratio between the first metal oxide and the polymer is 1:(0.01 to 0.3); (3) The average thickness of the intermediate shell is 1 nm to 5 nm; (4) The average thickness of the outer shell is 1 nm to 5 nm.

8. An optoelectronic device comprising an anode and a cathode disposed opposite each other, and a plurality of functional layers disposed between the anode and the cathode, characterized in that, The material of at least one of the plurality of functional layers includes the nanoparticles described in any one of claims 1 to 7.

9. The optoelectronic device according to claim 8, characterized in that, At least one of the following conditions must be met: (1) The plurality of functional layers include an electronic functional layer, the material of which includes the nanoparticles described in any one of claims 1 to 7; (2) The plurality of functional layers include a light-emitting layer, the material of which includes one or more of organic light-emitting materials and quantum dots; Optionally, the organic light-emitting material is selected from one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tris[2-(p-tolyl)pyridinium(III), 4,4',4”-tris(carbazole-9-yl)triphenylamine:tris[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives. And / or, the quantum dots include one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The core-shell quantum dots include one or more shells. The materials of the single-component quantum dots, the core of the core-shell quantum dots, and the shells of the core-shell quantum dots are each independently selected from at least one of group II-VI compounds, group III-VI compounds, group III-V compounds, group IV-VI compounds, or group I-III-VI compounds. The group II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, and Hg. Se, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, wherein the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, and A. One or more of the following: lP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. The group III-VI compounds are selected from one or more of In₂S₃, In₂Se₃, InGaS₃, and InGaSe₃; the group IV-VI compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; and the group I-III-VI compounds are selected from AgInS, AgInS₂, CuInS, CuInS₂, AgGaS₂, CuGaS₂, and CuGaO₂.AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2 are selected as one or more, wherein the inorganic perovskite quantum dots have the general structural formula QJT3, the organic-inorganic hybrid perovskite quantum dots have the general structural formula GJT3, and the organic perovskite quantum dots have the general structural formula LJT3, where J is a divalent metal cation, and J is independently selected from Pb each time it appears. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ and Eu 2+ One or more of them, where T is independently selected from Cl each time it appears. - ,Br - and I - One or more of them, where Q is Cs + G is selected from CH3(CH2). n-2 NH3 + Or [NH3(CH2)] n NH3] 2+ n≥2, L is selected from formamidinyl; (3) The plurality of functional layers include a hole functional layer, the hole functional layer includes a hole injection layer and / or a hole transport layer; when the hole functional layer includes the hole injection layer and the hole transport layer stacked together, the hole injection layer is closer to the anode than the hole transport layer; Optionally, the material of the hole functional layer includes one or more of organic materials, a first inorganic material, and a second inorganic material; the organic material includes poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N] [-Di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4”-tris(carbazole-9-yl)triphenylamine, 4,4',4’-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4' -Diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene, N,N,N' The first inorganic material comprises one or more of the following: N'-tetraarylbenzidine, 4,4',4”-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, N,N'-diphenyl-N,N'-di-[4-(N,N-diphenylamino)phenyl]benzidine, poly[2-methoxy-5-(2-ethylhexoxy)-1,4-phenylenevinylene], and poly[2-methoxy-5-[(3,7-dimethyloctoxy)-1,4-phenyl]-1,2-vinyldiyl]; the first inorganic material comprises one or more of the following: graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide.The second inorganic material comprises one or more doped second compounds. The host compound of the doped second compound includes graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, hafnium oxide, copper sulfide, molybdenum sulfide, or tungsten sulfide. The doping element of the doped second compound is selected from one or more of boron, nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metals. The molar amount of the doping element in the doped second compound accounts for no more than 50% of the total molar amount of the doped second compound.

10. An electronic device, characterized in that, It includes a power supply component and an optoelectronic device as described in claim 8 or 9, wherein the power supply component and the optoelectronic device are electrically connected.

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