High integration double-sided plastic package structure and manufacturing method

Abstract

The application relates to the technical field of chip packaging, in particular to a high-integration double-face plastic packaging structure and a manufacturing method, wherein an integrated bump+wire bond chip and a wire bond chip are attached on an upside-down on-chip chip on the front surface of the structure; the integrated bump+wire bond chip comprises edge conventional wire bond pads and a middle area bump; the edge conventional wire bond pads are connected with a substrate or the wire bond chip; the middle area bump is led out through a conductive copper column and is used for connecting an external functional module; and the wire bond chip is connected with the substrate. Compared with an existing double-face packaging hybrid chip structure (a DAF is attached on the back surface of the upside-down on-chip chip using a wire bond chip), the integrated bump+wire bond chip can save the process required by the film attaching and on-chip attaching on the back surface of the upside-down on-chip chip, and meanwhile, the product has higher integration and smaller volume.

Description

Technical Field

[0001] This invention relates to the field of chip packaging technology, specifically to a highly integrated double-sided molding compound structure and its manufacturing method. Background Technology

[0002] The semiconductor industry demands increasingly higher product integration, requiring more functions to be implemented within a fixed package size. To meet this urgent market demand, innovative packaging design and development work is underway – double-sided pin-out packaging design. By utilizing the top and bottom sides of the package to bring out pins, it greatly facilitates the stacking of different functional modules in the product, further expanding the functional boundaries and application possibilities of the product.

[0003] CN121096982A discloses a double-sided molding compound structure and manufacturing method for vertical wire bonding pins, including: a substrate; a front chip assembly and a device assembly; a back FC chip; a front molding compound; a back molding compound; a plurality of vertical solder wires; and a plurality of bumps; the substrate is a double-sided substrate, the front side of the substrate is respectively bonded with the front chip assembly and the device assembly and encapsulated by the front molding compound, the height of the front molding compound completely covers the height of the front chip assembly and the device assembly, the back side of the substrate is bonded with the back FC chip, each pin pad on the back side of the substrate is soldered with a vertical solder wire, and the lower end of each vertical solder wire is soldered with a bump, the back molding compound is encapsulated on the back side of the substrate, and the bumps are arranged protruding outward from the lower surface of the back molding compound.

[0004] The above solution uses vertical wire bonding to reduce the distance between pins, allowing more pins to be placed within the same area. This enables the extraction of more functional signals, reducing the burden on front-end design and improving package integration. However, this solution uses DAF (Device Attached to the Back of the Flip Chip) for wire bonding, which in practical applications faces challenges such as multiple overlapping processes, longer process times, and difficulty in compressing the overall thickness, thus limiting the reduction in package size. This not only affects production efficiency and cost but also fails to fully meet the development needs of high integration and small-volume packaging, proving particularly restrictive when targeting advanced electronic products. Summary of the Invention

[0005] To address the problems in the prior art, this invention provides a highly integrated double-sided molding compound structure and its manufacturing method.

[0006] This invention is achieved through the following technical solution: A highly integrated double-sided molding compound structure, comprising: substrate; The upper components include a front-side flip-chip and front-side resistors, capacitors, and inductors mounted on the front side of the substrate. The front-side flip-chip has an integrated bump+wire bond chip and a wire bond chip mounted on it. The integrated bump+wire bond chip includes edge regular wire bond pads and a middle bump area. The edge regular wire bond pads are connected to the substrate or the wire bond chip, and the middle bump area is led out through conductive copper pillars for connecting to external functional modules. The wire bond chip is connected to the substrate. The lower components include flip-chip mounted on the back side of the substrate; The upper component and the lower component are respectively encapsulated in the front molded body and the back molded body; The conductive copper pillars are mounted on the substrate and are flush with the front molding compound.

[0007] Preferably, the conductive copper pillars are made by mounting thick copper wires onto the substrate using a vertical wire bonding process or a surface mount technology with solder paste.

[0008] Preferably, the integrated bump+wire bond chip is mounted on the back of the flip-chip on the front side using DAF adhesive film.

[0009] Preferably, the integrated bump+wire bond chip, the wire bond chip, and the substrate are connected by gold or copper wires via wire bonding.

[0010] Preferably, solder balls are provided on the back side of the substrate.

[0011] Preferably, the solder ball protrudes from the back of the encapsulation.

[0012] Preferably, the conductive copper pillars are connected to external functional modules via SMT technology.

[0013] Preferably, the connecting copper pillars on the integrated bump+wire bond chip are flush with the front plastic package, and these connecting copper pillars are connected to external functional modules via SMT technology.

[0014] A method for manufacturing the aforementioned highly integrated double-sided molding compound includes: S1, with front-side flip-chip, front-side resistors, capacitors and inductors and copper pillars mounted; S2, an integrated bump+wire bond chip and wire bond chip are mounted on the flip-chip on the front side; S3, bonding substrate, integrated bump + wire bond chip and wire bond chip; S4, front plastic-encapsulated, with ground to expose the conductive copper pillars and the connection copper pillars of the integrated bump+wire bond chip; S5, flip the substrate, and mount the back-side chip and ball on the back of the substrate; S6, with the back plastic-sealed and ground to expose the solder ball interface.

[0015] A device comprising the aforementioned highly integrated double-sided molding compound structure.

[0016] Compared with the prior art, the present invention has the following beneficial effects: This invention introduces a highly integrated double-sided molding compound structure with an integrated bump + wire bond chip. Compared to existing double-sided packaged hybrid chip structures (where the wire bond chip is mounted on the back of the flip-chip using a DAF), the integrated bump + wire bond chip eliminates the steps required for back-side film application and mounting on the flip-chip, while simultaneously providing the product with higher integration and a smaller size. This integrated bump + wire bond chip achieves this by bumping the existing wire bond chip pads. Copper pillars or balls are soldered to the central pads, while the edge pads are retained without bumping. This partitioned interconnection approach connects the substrate, wire bond chip, and external functional modules, enabling heterogeneous integration and signal optimization, and contributing to the miniaturization and high performance of the package structure. Attached Figure Description

[0017] Figure 1 This is a cross-sectional view of a highly integrated double-sided plastic encapsulation structure according to the present invention.

[0018] In the diagram: 1. Front molded package; 2. Bonding wire; 3. Integrated bump + wire bond chip; 4. Front flip-chip; 5. Wire bond chip; 6. Back molded package; 7. Solder ball; 8. Conducting copper pillar; 9. Back flip-chip; 10. Resistor, capacitor, and inductor; 11. Substrate; 12. External functional module; 13. SMT solder paste application; 14. Connecting copper pillar. Detailed Implementation

[0019] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0020] Exemplary embodiments of the present invention will now be described with reference to the accompanying drawings. However, the present invention may be embodied in many different forms and is not limited to the embodiments described herein. These embodiments are provided to fully and completely disclose the invention and to fully convey its scope to those skilled in the art. The terminology used in the exemplary embodiments illustrated in the drawings is not intended to limit the invention. In the drawings, the same units / elements are referred to by the same reference numerals.

[0021] Unless otherwise stated, the terms used herein (including technical terms) have their common meaning as understood by one of ordinary skill in the art. Furthermore, it is understood that terms defined in commonly used dictionaries should be understood to have a meaning consistent with the context of their relevant field, and not to be interpreted as having an idealized or overly formal meaning.

[0022] The present invention will be further described in detail below with reference to specific embodiments. These descriptions are for explanation purposes only and are not intended to limit the scope of the invention.

[0023] This invention discloses a highly integrated double-sided molding compound structure, with reference to Figure 1 Includes: substrate; The upper components include a front flip-chip mounted on the front side of the substrate and front resistive, capacitive and inductive devices. An integrated bump+wire bond chip and a wire bond chip are mounted on the front flip-chip. The integrated bump+wire bond chip is mounted on the back side of the front flip-chip through DAF adhesive film.

[0024] The upper components include a front-side flip-chip and front-side resistors, capacitors, and inductors mounted on the front side of the substrate. The front-side flip-chip has an integrated bump+wire bond chip and a wire bond chip mounted on it. The integrated bump+wire bond chip includes edge regular wire bond pads and a middle bump area. The edge regular wire bond pads are connected to the substrate or the wire bond chip, and the middle bump area is led out through conductive copper pillars for connecting to external functional modules. The wire bond chip is connected to the substrate.

[0025] Specifically, the integrated bump+wire bond chip, the wire bond chip, and the substrate are connected by gold or copper wires via wire bonding.

[0026] The integrated bump+wire bond chip is achieved by bumping the existing wire bond chip pads. The bumping process includes, but is not limited to, the following methods: electroplating using conventional photolithography and etching methods, which can achieve extremely high bump array precision and consistency, ensuring a stable and reliable electrical connection between the chip and the substrate; using no-clean flux ball placement, which can avoid the residual risks that may be caused by the cleaning step, and helps to improve production efficiency, making it suitable for large-size, high-power devices; and forming gold bumps through ultrasonic bonding, which has excellent conductivity and mechanical strength, and is particularly suitable for fine-pitch, high-frequency, high-speed, and extremely reliable application scenarios.

[0027] In addition, the number of wire bond pads and bumps is determined based on the specific product design and packaging capabilities to avoid the bumps interfering with the wire bond.

[0028] The lower-level components include flip-chip mounted on the back side of the substrate.

[0029] The upper and lower components are respectively encapsulated in the front and back molded bodies.

[0030] Conductive copper pillars are thick copper wires that are mounted on the substrate using a vertical wire bonding process or a surface mount technology with solder paste, and their tops are flush with the front plastic package.

[0031] Solder balls are provided on the back of the substrate, and the solder balls protrude from the back encapsulation.

[0032] The connecting copper pillars on the integrated bump+wire bond chip are flush with the front molded body. Both the connecting copper pillars and the conduction copper pillars are connected to external functional modules through SMT technology, thereby achieving highly reliable and stable electrical and mechanical connections. This helps to control costs and achieve a high-density compact layout, thus saving system space.

[0033] This invention also discloses a method for manufacturing a highly integrated double-sided molding compound, comprising: S1 is a surface-mount flip-chip, front-side resistive, capacitive, and inductive devices, and conductive copper pillars.

[0034] Specifically, flux and solder paste should be used first for mounting flip-chip chips and resistors, capacitors and inductors; Copper pillars are mounted onto the substrate using a vertical wire bonding process or a surface mount technology with solder paste, using thick copper wires. S2 uses DAF adhesive film to mount an integrated bump+wire bond chip and a wire bond chip on the back of the flip-chip on the front.

[0035] S3 uses gold or copper wire bonding to bond the substrate, the integrated bump+wire bond chip, and the wire bond chip.

[0036] S4 is plastic-encapsulated on the front and ground to expose the conductive copper pillars and the connection copper pillars of the integrated bump+wire bond chip for connection to external functional modules.

[0037] S5, flip the substrate, and mount the back-side chip and ball on the back of the substrate; S6, the back is plastic-sealed and ground to expose the solder ball interface, then laser-drilled to form a ring around the solder ball, and after printing flux, a solder bump is formed.

[0038] The present invention also discloses a device comprising a highly integrated double-sided plastic encapsulation structure.

[0039] The above description is merely a preferred embodiment of the present invention and is not intended to limit the technical solution of the present invention in any way. Those skilled in the art should understand that, without departing from the spirit and principles of the present invention, the technical solution can be modified and replaced in several simple ways, and these modifications and replacements are all within the scope of protection covered by the claims.

Claims

1. A high integration double-sided plastic package structure, characterized in that, include: substrate; The upper components include a front-side flip-chip and front-side resistors, capacitors, and inductors mounted on the front side of the substrate. The front-side flip-chip has an integrated bump+wire bond chip and a wire bond chip mounted on it. The integrated bump+wire bond chip includes a conventional wire bond pad at the edge and a bump in the middle area. The conventional wire bond pad at the edge connects to the substrate or the wire bond chip. The bump in the middle area is led out through conductive copper pillars for connecting to external functional modules. The wire bond chip is connected to the substrate. The lower components include flip-chip mounted on the back side of the substrate; The upper component and the lower component are respectively encapsulated in the front molded body and the back molded body; The conductive copper pillars are mounted on the substrate and are flush with the front molding compound.

2. The high integration double-sided plastic package structure according to claim 1, wherein, Conductive copper pillars are thick copper wires that are mounted on a substrate using a vertical wire bonding process or a surface mount technology with solder paste.

3. The high integration double-sided plastic package structure according to claim 2, wherein, The integrated bump+wire bond chip is mounted on the back of the flip-chip on the front side using DAF adhesive film.

4. The high integration double-sided plastic package structure of claim 3, wherein, The integrated bump+wire bond chip, the wire bond chip and the substrate are connected by gold or copper wires through wire bonding.

5. The high-density dual-side plastic package structure of claim 4, wherein, Solder balls are placed on the back of the substrate.

6. The high-density dual-side plastic package structure of claim 1, wherein, The solder ball protrudes from the back of the encapsulation.

7. The highly integrated double-sided molding compound structure according to claim 1, characterized in that, The conductive copper pillars are connected to external functional modules via SMT technology.

8. The high-density dual-side plastic package structure of claim 1, wherein, The connecting copper pillars on the integrated bump+wire bond chip are flush with the front plastic package, and these connecting copper pillars are connected to external functional modules via SMT technology.

9. A method for manufacturing a high-density double-sided plastic package structure as claimed in any one of claims 1 to 8, characterized in that, include: S1, with front-side flip-chip, front-side resistors, capacitors and inductors and copper pillars mounted; S2, an integrated bump+wire bond chip and wire bond chip are mounted on the flip-chip on the front side; S3, bonding substrate, integrated bump + wire bond chip and wire bond chip; S4, front plastic-encapsulated, with ground to expose the conductive copper pillars and the connection copper pillars of the integrated bump+wire bond chip; S5, flip the substrate, and mount the back-side chip and ball on the back of the substrate; S6, with the back sealed and ground to expose the solder ball interface.

10. A device comprising a highly integrated double-sided molding compound structure as described in any one of claims 1 to 8.

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