Light detection device

Abstract

The light detection device includes: a first pixel having a first photoelectric conversion element for converting light into electrical charge disposed on a first surface side of a substrate; a pixel separation region extending around the side of the first pixel, the pixel separation region optically and electrically separating the first pixel from its surroundings; and a first transmission transistor disposed on the first pixel overlapping a second surface side of the substrate opposite to the first surface, a first main electrode electrically connected to the first photoelectric conversion element, the first main electrode being one of a pair of main electrodes of the first transmission transistor. Furthermore, a second main electrode is disposed in a truncated portion formed by a portion of the pixel separation region being truncated in the extending direction on at least the second surface side of the substrate, the second main electrode being the other of the pair of main electrodes of the first transmission transistor.

Description

Technical Field

[0001] This invention relates to a light detection device. Background Technology

[0002] Patent Document 1 discloses a solid-state imaging device. This solid-state imaging device includes a photoelectric converter formed for each pixel and a pixel separator for separating the photoelectric converters for each pixel. Both the photoelectric converter and the pixel separator are formed on a silicon (Si) substrate. The solid-state imaging device is constructed as a back-illuminated type, and pixel transistors are formed within pixels on the surface of a silicon substrate opposite to the light incident surface. Pixel transistors may include, for example, transmission transistors. Citation List Patent documents

[0003] Patent Document 1: International Publication No. WO 2018 / 139279 Summary of the Invention

[0004] As the number of pixels increases, the pixel area of ​​solid-state imaging devices tends to decrease. Therefore, it is necessary to reduce the ratio of the area occupied by the pixel transistors within the pixel to the pixel area.

[0005] The light detection apparatus according to a first aspect of this disclosure includes: a first pixel having a first photoelectric conversion element for converting light into electrical charge disposed on a first surface side of a substrate; a pixel separation region extending around the side of the first pixel, the pixel separation region optically and electrically separating the first pixel from its surroundings; and a first transmission transistor disposed overlapping the first pixel on a second surface side of the substrate opposite to the first surface, a first main electrode electrically connected to the first photoelectric conversion element, the first main electrode being one of a pair of main electrodes of the first transmission transistor. Furthermore, a second main electrode is disposed in a cut-off portion formed by a portion of the pixel separation region being truncated in the extending direction at least on the second surface side of the substrate, the second main electrode being the other of a pair of main electrodes of the first transmission transistor.

[0006] The photodetector according to the second aspect of this disclosure further includes, in the photodetector according to the first aspect: a first well region having a first transmission transistor disposed on a second surface side of the substrate; and a first well contact region disposed in another cut-off portion formed due to another portion of the pixel separation region being cut off on at least the second surface side of the substrate in the extension direction, the first well contact region having the same conductivity type as the first well region and being electrically connected to the first well region.

[0007] The light detection apparatus according to a third aspect of this disclosure includes: a second pixel adjacent to a first pixel on a first surface side of a substrate, the second pixel being provided with a second photoelectric conversion element for converting light into electrical charge; a pixel separation region extending around the side of the second pixel, the pixel separation region optically and electrically separating the second pixel from its surroundings; and a second transmission transistor disposed overlapping the second pixel on a second surface side of the substrate, a third main electrode electrically connected to the second photoelectric conversion element, the third main electrode being one of a pair of main electrodes of the second transmission transistor. Furthermore, a fourth main electrode is disposed in a cut-off portion formed by a portion of the pixel separation region being truncated in the extending direction at least on the second surface side of the substrate, the fourth main electrode being the other of a pair of main electrodes of the second transmission transistor.

[0008] The photodetector according to the fourth aspect of this disclosure further includes, in addition to, the photodetector according to the third aspect: a second well region having a second transmission transistor disposed on a second surface side of the substrate; and a second well contact region disposed in another cut-off portion formed due to another portion of the pixel separation region being cut off on at least the second surface side of the substrate in the extension direction, the second well contact region having the same conductivity type as the second well region and being electrically connected to the second well region.

[0009] In the light detection apparatus according to the fifth aspect of this disclosure, the first pixel and the second pixel can constitute the phase difference detection pixel in the light detection apparatus according to the fourth aspect of this disclosure.

[0010] In the light detection apparatus according to the sixth aspect of this disclosure, an overflow path region is provided in another cut-off portion formed by cutting off another portion of the pixel separation region between the first pixel and the second pixel in the extending direction in the light detection apparatus according to the fifth aspect. The overflow path region allows excess charge to flow from one of the first photoelectric conversion element and the second photoelectric conversion element to the other. Attached Figure Description

[0011] Figure 1 This is an overall system construction diagram of the optical detection device according to the first embodiment of this disclosure. Figure 2 yes Figure 1 The diagram shows the pixels and pixel circuitry of the light detection device. Figure 3 yes Figure 2 The diagram shows the specific planar structure of the pixels. Figure 4 yes Figure 3 The diagram shows the vertical cross-sectional structure of the light detection device and pixels (along...). Figure 3 (The cross-sectional view shown by section line AA). Figure 5 yes Figure 3 The diagram shows a vertical cross-sectional view of the main components of the light detection device and pixel (along...). Figure 3 (The cross-sectional view of section line BB shown). Figure 6 yes Figure 3 The diagram shows a vertical cross-sectional view of the main components of the light detection device and pixel (along...). Figure 3 (Cross-sectional view of section line CC shown). Figure 7 This is a circuit diagram of the pixels and pixel circuits of the light detection device according to the second embodiment of the present disclosure, the circuit diagram corresponding to Figure 2 . Figure 8 This is a circuit diagram of the pixels and pixel circuits of the light detection apparatus according to the third embodiment of the present disclosure; the circuit diagram corresponds to Figure 2 . Figure 9 This is a circuit diagram of the pixels and pixel circuits of the light detection apparatus according to the fourth embodiment of this disclosure; the circuit diagram corresponds to Figure 2 . Figure 10 This is a planar structural diagram of the pixels of the light detection device according to the fifth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 11 This is a planar structural diagram of the pixels of the light detection device according to the sixth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 12 yes Figure 11 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 11 (Cross-sectional view of section line DD shown). Figure 13 This is a planar structural diagram of the pixels of the light detection device according to the seventh embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 14 yes Figure 13 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 13 (Cross-sectional view of section line EE shown). Figure 15 This is a planar structural diagram of the pixels of the light detection device according to the eighth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 16 yes Figure 15 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 15 (Cross-sectional view of section line FF shown). Figure 17This is a planar structural diagram of the pixels of the light detection device according to the ninth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 18 This is a planar structural diagram of the pixels of the light detection device according to the tenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 19 yes Figure 18 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 18 (The cross-sectional view of section line GG shown). Figure 20 This is a planar structural diagram of the pixels of the light detection device according to the eleventh embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 21 yes Figure 20 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 20 (The cross-sectional view shown by the section line HH). Figure 22 This is a planar structural diagram of the pixels of the light detection device according to the twelfth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 23 yes Figure 22 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 22 (Cross-section view of section line II shown). Figure 24 This is a planar structural diagram of the pixels of the light detection device according to the thirteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 25 yes Figure 24 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 24 (The cross-sectional view of section line JJ shown). Figure 26 This is a planar structural diagram of the pixels of the light detection device according to the fourteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 27 This is a planar structural diagram of the pixels of the light detection device according to the fifteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 28 This is a planar structural diagram of the pixels of the light detection device according to the sixteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 29 This is a planar structural diagram of the pixels of the light detection device according to the seventeenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 30 This is a planar structural diagram of the pixels of the light detection device according to the eighteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 31 yes Figure 30 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 30 (The cross-sectional view of section line KK shown). Figure 32 This is a planar structural diagram of the pixels of the light detection device according to the nineteenth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 33 This is a planar structural diagram of the pixels of the light detection device according to the twentieth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 34 yes Figure 33 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 33 (Cross-sectional view of section line LL shown). Figure 35 This is a planar structural diagram of the pixels of the light detection device according to the twenty-first embodiment of this disclosure; the planar structural diagram corresponds to Figure 3 . Figure 36 yes Figure 35 The vertical cross-sectional construction diagram of the pixel shown (along) Figure 35 (The cross-sectional view of section line MM shown). Figure 37 This is a planar structural diagram of the pixels of the light detection device according to the twenty-second embodiment of this disclosure; the planar structural diagram corresponds to Figure 3 . Figure 38 This is a planar structural diagram of the pixels of the light detection device according to the twenty-third embodiment of this disclosure; the planar structural diagram corresponds to Figure 3 . Figure 39 This is a planar structural diagram of the pixels of the light detection device according to the twenty-fourth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Figure 40 This is a planar structural diagram of the pixels of the light detection device according to the twenty-fifth embodiment of the present disclosure; the planar structural diagram corresponds to Figure 3 . Detailed Implementation

[0012] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that the descriptions are presented in the following order. 1. First Embodiment The first embodiment illustrates a first example of applying the present technology to a light detection device. The first embodiment describes the overall system structure of the light detection device, the circuit structure of the pixels and pixel circuits, and the planar and vertical cross-sectional structures of the pixels. 2. Second Embodiment The second embodiment illustrates a second example, which is a variation of the circuit construction of the pixel and pixel circuit in the light detection device according to the first embodiment. 3. Third embodiment The third embodiment illustrates a third example, which is a variation of the circuit construction of the pixel and pixel circuit in the light detection device according to the first embodiment. 4. Fourth Embodiment The third embodiment illustrates a fourth example, which is a variation of the circuit construction of the pixel and pixel circuit in the light detection device according to the first embodiment. 5. Fifth Embodiment The fifth embodiment illustrates a fifth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixels in the light detection device according to the first embodiment. 6. Sixth Embodiment The sixth embodiment illustrates a sixth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the first embodiment. 7. Seventh Embodiment The seventh embodiment illustrates a seventh example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the sixth embodiment. 8. Eighth Embodiment The eighth embodiment illustrates an eighth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixels in the light detection device according to the first embodiment. 9. Ninth Embodiment The ninth embodiment illustrates a ninth example, which is a combination of the light detection device according to the fifth embodiment and the light detection device according to the eighth embodiment. 10. Tenth Embodiment The tenth embodiment describes a tenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the first embodiment. 11. Eleventh Embodiment The eleventh embodiment illustrates an eleventh example, which is a combination of the light detection device according to the eighth embodiment and the light detection device according to the tenth embodiment. 12. Twelfth Embodiment The twelfth embodiment illustrates a twelfth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the tenth embodiment. 13. Thirteenth Embodiment The thirteenth embodiment illustrates a thirteenth example, which is a combination of the light detection device according to the eleventh embodiment and the light detection device according to the twelfth embodiment. 14. Fourteenth Embodiment The fourteenth embodiment illustrates the fourteenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the tenth embodiment. 15. Fifteenth Embodiment The fifteenth embodiment illustrates a fifteenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the fourteenth embodiment. 16. Sixteenth Embodiment The sixteenth embodiment illustrates a sixteenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the fifteenth embodiment. 17. Seventeenth Embodiment The seventeenth embodiment illustrates a seventeenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the sixteenth embodiment. 18. Eighteenth Embodiment The eighteenth embodiment illustrates an eighteenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the fourteenth embodiment. 19. Nineteenth Embodiment The nineteenth embodiment illustrates the nineteenth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the eighteenth embodiment. 20. Twentieth Embodiment The twentieth embodiment illustrates a twentieth example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the tenth embodiment. 21. Twenty-first embodiment The twenty-first embodiment illustrates a twenty-first example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the twenty-first embodiment. 22. Twenty-second embodiment The twenty-second embodiment illustrates a twenty-second example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the twenty-first embodiment. 23. Twenty-first embodiment The twenty-third embodiment illustrates a twenty-third example, which is a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the twenty-second embodiment. 24. Twenty-fourth embodiment The twenty-fourth embodiment illustrates a twenty-fourth example, which is a variation of the planar structure of the pixel and pixel circuit in the light detection device according to the first embodiment. 25. Thirty-fifth embodiment The twenty-fifth embodiment illustrates a twenty-fifth example, which is a variation of the planar structure of the pixel and pixel circuit in the light detection device according to the fourteenth embodiment. 26. Other embodiments <1. First Embodiment>

[0013] Reference Figures 1 to 6 The light detection device 1 according to the first embodiment of this disclosure is described.

[0014] Here, the arrow X direction, appropriately shown in the accompanying drawings, advantageously indicates the orientation of one plane of the light detection device 1 placed on a plane. The arrow Y direction indicates another plane direction perpendicular to the arrow X direction. Furthermore, the arrow Z direction indicates an upward direction perpendicular to both the arrow X and arrow Y directions. That is, the arrow X, arrow Y, and arrow Z directions correspond exactly to the X-axis, Y-axis, and Z-axis directions of the three-dimensional coordinate system, respectively. It should be noted that these directional diagrams are for illustrative purposes only and do not limit the direction of this technology. [Structure of optical detection device 1] (1) Overall structure of optical detection device 1

[0015] Figure 1 An example of the overall system configuration of the light detection device 1 according to the first embodiment is shown. The light detection device 1 is constructed using a back-illuminated solid-state imaging device, or includes a back-illuminated solid-state imaging device. Here, the light detection device 1 is constructed using a complementary metal-oxide-semiconductor (CMOS) solid-state imaging device. In the light detection device 1, light L entering from the outside (see...) is detected. Figure 4 The detected light L is converted into charge, and then an image such as a still image or a moving image is generated based on the converted charge.

[0016] The light detection device 1 includes a pixel region (pixel array) 100 and peripheral circuitry. The pixel region 100 includes a plurality of pixels 100 arranged in a two-dimensional and regular manner in a plane along the X and Y directions.

[0017] As will be explained later, pixel 10 includes a photoelectric conversion element PD (see, for example, see...). Figure 2 ) and transfer transistor TR (for example, see Figure 2 ). Photoelectric conversion elements (PDs) include, for example, photodiodes. The photoelectric conversion element (PD) draws light L from the outside (see...). Figure 4The charge is converted into electrical charge. The transfer transistor TR transfers the charge converted by the photoelectric conversion element PD. In addition, pixel circuit 20 (see Figure 2 It is electrically connected to pixel 10. Pixel circuit 20 reads the converted charge in pixel 10.

[0018] The peripheral circuits include the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, the output circuit Out, and the control circuit CC.

[0019] The control circuit CC receives data such as the input clock and command operation mode, and outputs data such as internal information of the photodetector 1. That is, based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock, the control circuit CC generates clock signals and control signals as operating references for the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, etc. These signals are then input to the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, etc.

[0020] The vertical drive circuit VD includes, for example, a shift register. The vertical drive circuit VD selects a pixel drive line Ld and provides pulses to the selected pixel drive line Ld to drive pixel 10. Pixel 10 is driven row by row. That is, the vertical drive circuit VD sequentially selects and scans pixels 10 row by row in the pixel region 100 along the vertical direction. The signal charge generated based on the amount of light received by the photoelectric conversion element PD of each pixel 10 is provided as a pixel signal to the column signal processing circuit CS via the vertical signal line VSL.

[0021] For example, the column signal processing circuit CS is configured for each column of pixels 10. In the column signal processing circuit CS, for each column of pixels, signal processing such as noise reduction is performed on the signal output from a row of pixels 10. That is, in the column signal processing circuit CS, signal processing such as correlated double sampling (CDS), signal amplification, or analog-to-digital (AD) conversion is performed to remove specific fixed-pattern noise from pixels 10. The horizontal selection switch, omitted from the diagram for clarity, is connected between the horizontal signal line Lh and the column signal processing circuit CS to the output stage of the column signal processing circuit CS.

[0022] The horizontal drive circuit HD includes, for example, a shift register. The horizontal drive circuit HD sequentially outputs horizontal scan pulses, thereby selecting each column signal processing circuit CS one by one, and causing each column signal processing circuit CS to output pixel signals to the horizontal signal line Lh.

[0023] The output circuit Out processes the signals sequentially supplied from each column signal processing circuit CS via the horizontal signal line Lh and outputs the processed signals. For example, in some cases, the output circuit Out only performs buffering operations, while in others it performs black level adjustment, column offset correction, various digital signal processing operations, etc. The input / output terminal In performs signal exchange between the photodetector 1 and the outside world. (2) Circuit construction of pixel 10 and pixel circuit 20

[0024] Figure 2 An example of the circuit structure of the pixel 10 and pixel circuit 20 of the light detection device 1 is shown. In the first embodiment, four pixels 10 are electrically connected to one pixel circuit 20, and the four pixels 10 share the same pixel circuit 20. That is, the corresponding charges obtained by light conversion in the four pixels 10 are read in one pixel circuit 20. These four pixels 10 sharing one pixel circuit 20 constitute a unit pixel.

[0025] For ease of understanding, pixel 10 within a unit pixel is designated as "10,1". Furthermore, pixel 10 adjacent to pixel 10,1 in the X-direction of the arrow is designated as "10,3". Pixel 10 adjacent to pixel 10,1 in the Y-direction of the arrow is designated as "10,2". Then, pixel 10 adjacent to pixel 10,2 in the X-direction of the arrow is designated as "10,4". Therefore, a unit pixel consists of a “2×2” pixel array composed of two pixels 10,1 and 10,3 arranged along the X direction of arrow and two pixels 10,2 and 10,4 arranged along the Y direction of arrow. It should be noted that unless otherwise specified, pixels 10,1 to 10,4 are referred to simply as "pixel 10".

[0026] Furthermore, in the first embodiment, pixel 10 is configured as a phase difference detection pixel. In the light detection apparatus 1 according to the first embodiment, all or part of the pixels 10 in the pixel region 100 are configured as phase difference detection pixels. That is, when detecting the phase difference of light L, pixel 10 is used as a phase difference detection pixel; otherwise, pixel 10 is used as a normal pixel.

[0027] Pixel 10,1 in the unit pixel includes pixel 10L and pixel 10R, which is adjacent to pixel 10L in the direction of arrow X. Similarly, pixels 10,2 to 10,4 each include pixel 10L and pixel 10R, which is adjacent to pixel 10L in the direction of arrow X.

[0028] Each of pixels 10,1 to 10,4 includes a photoelectric conversion element PDL and a transmission transistor TRL, and includes a series circuit of the two elements. Specifically, the photoelectric conversion element PDL here includes a photodiode. A photodiode includes an anode region and a cathode region. Meanwhile, the transfer transistor TRL includes an insulated-gate field-effect transistor (IGFET). The IGFET includes a pair of main electrodes (source region and drain region) and a gate electrode. The anode region of the photoelectric conversion element PDL is electrically connected to the reference voltage GND. Furthermore, the cathode region is electrically connected to one of the main electrodes of the transmission transistor TRL. The other main electrode is electrically connected to one end of the floating diffuser FD. Furthermore, the gate electrode is input with a control signal to control whether it is turned on or off.

[0029] Similarly, each pixel 10R from 10,1 to 10,4 includes a photoelectric conversion element PDR and a transmission transistor TRR, and includes a series circuit of these two elements. Specifically, the photoelectric conversion element PDR here includes a photodiode. The photodiode includes an anode region and a cathode region. Meanwhile, the transfer transistor TRR includes an IGFET. The IGFET includes a pair of main electrodes (source region and drain region) and a gate electrode. The anode region of the photoelectric conversion element PDR is electrically connected to the reference voltage GND. Furthermore, the cathode region is electrically connected to one of the main electrodes of the transmission transistor TRR. The other main electrode is electrically connected to one end of the floating diffuser FD. Furthermore, the gate electrode is input with a control signal to control whether it is turned on or off.

[0030] Unless otherwise specified, pixels 10L and 10R are both referred to as "pixel 10". Furthermore, unless otherwise specified, photoelectric conversion elements PDL and PDR are both referred to as "photoelectric conversion element PD". Additionally, unless otherwise specified, transmission transistors TRL and TRR are both referred to as "transmission transistor TR".

[0031] Here, pixel 10L corresponds to the "first pixel" according to the present invention, and pixel 10R corresponds to the "second pixel" according to the present invention. Furthermore, photoelectric conversion element PDL corresponds to the "first photoelectric conversion element" according to the present invention, and photoelectric conversion element PDR corresponds to the "second photoelectric conversion element" according to the present invention.

[0032] Furthermore, the transfer transistor TRL corresponds to the "first transfer transistor" according to the present invention. Of the pair of main electrodes of the transfer transistor TRL, one main electrode corresponds to the "first main electrode" according to the present invention, and the other main electrode corresponds to the "second main electrode" according to the present invention. Furthermore, the transfer transistor TRR corresponds to the "second transfer transistor" according to the present invention. Of the pair of main electrodes of the transfer transistor TRR, one main electrode corresponds to the "third main electrode" according to the present invention, and the other main electrode corresponds to the "fourth main electrode" according to the present invention.

[0033] Furthermore, as its detailed structure will be described later, in the first embodiment, the transfer transistor TR includes a vertical transistor. That is, the transfer transistor TR is configured as a vertical IGFET.

[0034] Pixel circuit 20 includes multiple pixel transistors. These pixel transistors include a reset transistor 2, an amplification transistor AMP, and a selection transistor SEL. Each transistor within the pixel circuit includes a horizontal IGFET.

[0035] One main electrode (e.g., the source region) of the reset transistor RST is electrically connected to the other end of the floating diffuser FD. The other main electrode is electrically connected to the power supply voltage VDD. A reset signal is input to the gate electrode. When the reset transistor RST enters the on state, it resets the floating diffuser FD to a potential corresponding to the power supply voltage VDD.

[0036] One main electrode of the amplifying transistor AMP is electrically connected to one main electrode of the select transistor SEL. The other main electrode is electrically connected to the power supply voltage VDD. The gate electrode is electrically connected to one main electrode of the reset transistor RST and the other end of the floating diffuser FD. The amplifying transistor AMP contains a source follower amplifier. That is, the amplifying transistor AMP generates pixel signals based on the charge transferred through the floating diffuser FD.

[0037] The other main electrode of the select transistor SEL is electrically connected to the vertical signal line VSL. The gate electrode is fed with the select signal. Selecting transistor SEL will output the generated pixel signal to vertical signal line VSL.

[0038] It should be noted that the pixel circuit 20 may include a floating diffuser (FD) conversion gain switching transistor. In this case, one main electrode of the FD conversion gain switching transistor is electrically connected to the floating diffuser FD, and the other main electrode is electrically connected to one main electrode (e.g., the source region) of the reset transistor RST. (3) Schematic diagram of the optical detection device 1

[0039] Although detailed illustrations are omitted here, the light detection device 1 according to the first embodiment employs a three-layer stacked structure, wherein the first substrate 1A, the second substrate 1B, and the third substrate 1C are stacked sequentially from top to bottom in the direction of incident light L (see [reference]). Figure 4 ). It should be noted that the photodetector 1 can adopt a two-layer stacked structure, wherein the first substrate 1A and the second substrate 1B are combined to form a substrate, and the third substrate 1C is stacked on the substrate (see photodetector 1 according to the twenty-fourth or twenty-fifth embodiment).

[0040] Pixel region 100 is disposed over substantially the entire area of ​​the first substrate 1A (see [reference]). Figure 1 In other words, the first substrate 1A is provided with the photoelectric conversion element PD and the transmission transistor TR contained in the pixel 10. The first substrate 1A constitutes a light detection surface, serving as the imaging surface for capturing images.

[0041] Pixel circuit 20 (see Figure 2 The second substrate 1B is provided with the amplification transistor AMP, the reset transistor RST, and the selection transistor SEL contained in the pixel circuit 20. It should be noted that in the case of the light detection device 1 having a two-layer stacked structure, the pixel circuit 20 is disposed on the substrate composed of the first substrate 1A and the second substrate 1B.

[0042] The peripheral circuitry is located in the third substrate 1C (see...). Figure 1 As mentioned above, these peripheral circuits include the vertical drive circuit VD, the column signal processing circuit CS, the horizontal drive circuit HD, the output circuit Out, and the control circuit CC, etc. (4) Specific structure of optical detection device 1

[0043] Figure 3 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Furthermore, Figure 4 It shows along Figure 3 The example shown is a vertical cross-section of pixel 10 cut by the section line AA. Figure 5 It shows along Figure 3 The example shown is a vertical cross-sectional structure of the main part of pixel 10 cut by the section line BB. Figure 6 It shows along Figure 3 The example shown is a vertical cross-sectional structure of the main part of pixel 10 cut by the section line CC. It should be noted that, Figure 3 The corresponding components of the second substrate 1B and the third substrate 1C are schematically shown. Furthermore, in Figure 4 and Figure 5 The optical lens 9 and the corresponding components of the second substrate 1B and the third substrate 1C are omitted. (4-1) Structure of the first substrate 1A

[0044] like Figures 3 to 6As shown, pixels 10 and a pixel region 100 having a plurality of pixels 10 are disposed in a first substrate 1A. The first substrate 1A includes a semiconductor substrate 30 and a wiring layer 31.

[0045] For example, a single-crystal silicon (Si) substrate is used as the semiconductor substrate 30. The semiconductor substrate 30 has a first surface 30A on the forward side in the direction of arrow Z, and a second surface 30B opposite to the first surface 30A on the reverse side in the direction of arrow Z. Here, n-type is defined as "first conductivity type", and p-type, which is the opposite of n-type, is defined as "second conductivity type". A p-type well region 302 is provided on at least the second surface 30B side of the semiconductor substrate 30. It should be noted that the p-type well region 302 of the semiconductor substrate 30 can be replaced with an intrinsic semiconductor (i-type semiconductor region).

[0046] A wiring layer 31 is stacked on the second surface 30B of the semiconductor substrate 30. The wiring layer 31 includes an insulator 7 and signal wirings 71 and power wirings 72, which are configured to pass through the insulator 7 along the thickness direction of the insulator 7. Insulator 7 is formed of an insulating material (e.g., silicon oxide (SiO2)). Signal wiring 71 and power wiring 72 are both formed of a metallic material (e.g., tungsten (W)). (4-2) Construction of pixel 10

[0047] like Figures 3 to 6 As shown, within a unit pixel of pixel 10, pixel 10,1 includes pixels 10L and 10R that constitute the phase difference detection pixel. Viewed from the direction of arrow Z or its opposite (hereinafter referred to as the "planar view"), pixel 10R is formed with a shape linearly symmetrical to pixel 10L about a center line CL1, wherein the center line CL1 extends along the direction of arrow Y at a midpoint between pixel 10L and pixel 10R. The center line CL1 coincides exactly with the section line BB. In other words, pixel 10R is formed with optical symmetry to pixel 10L.

[0048] Pixel 10L includes a photoelectric conversion element (PDL) and a transmission transistor (TRL). Here, the planar shape of pixel 10L in the planar view is rectangular, with its side length along the Y-direction being greater than its side length along the X-direction. Pixel separation region 4 extends along the sides of pixel 10L. The specific structure of pixel separation region 4 will be described later.

[0049] A photoelectric conversion element PDL is disposed in the first substrate 1A and located on the first surface 30A side of the semiconductor substrate 30. The photoelectric conversion element PDL is formed by a p-type well region 302 as the anode region and an n-type semiconductor region 301 as the cathode region.

[0050] The transfer transistor TRL is disposed in the first substrate 1A and located on the second surface 30B side of the semiconductor substrate 30. The transfer transistor TRL includes a gate electrode 52, a gate insulating film 53, and a pair of main electrodes.

[0051] The gate insulating film 53 extends from the second surface 30B along the depth direction of the p-type well region 302 and is formed along at least the sidewalls of the trench 51 (which is formed to reach the n-type semiconductor region 301). The gate insulating film 53 may be formed, for example, using one or more insulating materials selected from SiO2, silicon nitride (SiN), and silicon oxynitride (SiON).

[0052] The gate electrode 52 is buried in the trench 51 through the gate insulating film 53, and a portion of the gate electrode 52 extends to the second surface 30B. The gate electrode 52 is formed, for example, using polysilicon.

[0053] Of this pair of main electrodes, one main electrode is formed using an n-type semiconductor region 301, which serves as the cathode region of the photoelectric conversion element PDL. The other main electrode will be described later.

[0054] Pixel 10R includes a photoelectric conversion element (PDR) and a transmission transistor (TRR). Like pixel 10L, pixel 10R has a rectangular planar shape, with its side length along the Y-direction (arrow Y) being greater than its side length along the X-direction (arrow X). A pixel separation region 4 extends around the sides of pixel 10R. This pixel separation region 4, extending between pixels 10L and 10R, is shared by both pixels. The specific construction of the pixel separation region 4 will be described in detail later.

[0055] Similar to the photoelectric conversion element PDL, the photoelectric conversion element PDR is disposed on the first surface 30A side of the p-type well region 302. The photoelectric conversion element PDR is formed by a pn junction of the p-type well region 302 as the anode region and the n-type semiconductor region 301 as the cathode region.

[0056] Similar to the transfer transistor TRL, the transfer transistor TRR is disposed on the second surface 30B side of the p-type well region 302. The transfer transistor TRR includes a gate electrode 52, a gate insulating film 53, and a pair of main electrodes.

[0057] The gate insulating film 53 extends from the second surface 30B along the depth direction of the p-type well region 302 and is formed along at least the sidewalls of the trench 51 (which is formed to reach the n-type semiconductor region 301). The gate electrode 52 is embedded in the groove 51 through the gate insulating film 53, and a portion of the gate electrode 52 extends to the second surface 30B. Of this pair of main electrodes, one main electrode is formed using an n-type semiconductor region 301, which serves as the cathode region of the photoelectric conversion element PDR. The other main electrode will be described later. (4-3) Construction of pixel separation region 4

[0058] The pixel separation region 4 optically and electrically separates each of pixels 10L and 10R from its surroundings. In a first embodiment, the pixel separation region 4 includes a separation groove 401, an insulator 402, an embedded body 403, and an insulator 404.

[0059] Here, the separation groove 401 of the pixel separation region 4 is formed as a trench from the first surface 30A to the second surface 30B of the semiconductor substrate 30. Insulator 402 is disposed along the inner wall of separation tank 401. Insulator 402 is formed, for example, using SiO2. The embedded body 403 is embedded inside the separation tank 401, separated by an insulator 402. For example, the embedded body 403 is made of polycrystalline silicon. Insulator 404 is embedded on the second surface 30B side of separation groove 401. Insulator 404 is formed, for example, using SiO2.

[0060] Furthermore, a p-type semiconductor region 303 is provided on the semiconductor substrate 30 along the separation groove 401 of the pixel separation region 4. The p-type semiconductor region 303 serves as a pinning region, which effectively suppresses or prevents the generation of dark current.

[0061] The pixel separation region 4 surrounding the side of pixel 10L has a truncated portion 41, which is formed by cutting off a portion of the pixel separation region 4 in the extending direction. Figure 3 The upper right portion of the middle pixel 10L). The cut-off portion 41 is a region on the second surface 30B side of the semiconductor substrate 30 where the pixel separation region 4 or a portion thereof (e.g., insulator 404) is not provided, and is formed as a p-type well region 302, an intrinsic semiconductor semiconductor region, etc. The cut-off portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the transfer transistor TRL. The n-type semiconductor region 54 is formed, for example, by activating an n-type impurity implanted using an ion implantation method. The signal wiring 71 located directly above the n-type semiconductor region 54 is electrically connected to the n-type semiconductor region 54.

[0062] Furthermore, the cut-off portion 41 is shared by the pixel separation region 4 surrounding pixel 10,1 and the pixel separation region 4 surrounding adjacent pixel 10,2 in the direction of arrow Y. That is, the other main electrode (n-type semiconductor region 54) of the transmission transistor TRL is shared by pixel 10L of pixel 10,1 and pixel 10L of pixel 10,2.

[0063] Furthermore, the pixel separation region 4 surrounding the side of pixel 10L has a truncated portion 42, which is formed by cutting off another portion of the pixel separation region 4 in the extending direction. Figure 3 (Lower left portion of the middle pixel 10L). Like the cut-off portion 41, the cut-off portion 42 is formed as a semiconductor region on the second surface 30B side of the semiconductor substrate 30 where no pixel separation region 4 or a portion thereof is provided. The cut-off portion 42 is provided with a p-type well contact region 6. The p-type well contact region 6 is electrically connected to the p-type well region 302. The p-type well contact region 6 is formed, for example, by activating a p-type impurity implanted using an ion implantation method. The power cable 72, located directly above the p-type trap contact area 6, is electrically connected to the p-type trap contact area 6.

[0064] Meanwhile, the pixel separation region 4 surrounding the side of pixel 10R has a truncated portion 41, which is formed because a portion of the pixel separation region 4 is truncated in the extending direction. Figure 3 (The upper left portion of the middle pixel 10R). The cut-off portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the transmission transistor TRR. The signal wiring 71 located directly above the n-type semiconductor region 54 is electrically connected to the n-type semiconductor region 54.

[0065] Furthermore, the cut-off portion 41 is shared by the pixel separation region 4 surrounding pixel 10,1 and the pixel separation region 4 surrounding adjacent pixel 10,2 in the direction of arrow Y. That is, the other main electrode (n-type semiconductor region 54) of the transmission transistor TRR is shared by pixel 10R of pixel 10,1 and pixel 10R of pixel 10,2.

[0066] Furthermore, the pixel separation region 4 surrounding the side of pixel 10R has a truncated portion 42, which is formed because another portion of the pixel separation region 4 is truncated in the extending direction. Figure 3 (Lower right portion of the middle pixel 10R). The cut-off portion 42 is provided with a p-type well contact area 6. The p-type well contact area 6 is electrically connected to the p-type well area 302. The power cable 72, located directly above the p-type trap contact area 6, is electrically connected to the p-type trap contact area 6.

[0067] Here, the p-type well region 302 provided in pixel 10L corresponds to the "first well region" according to the present invention, and the p-type well contact region 6 electrically connected to the p-type well region 302 corresponds to the "first well contact region" according to the present invention. Furthermore, the p-type well region 302 provided in pixel 10R corresponds to the "second well region" according to the present invention, and the p-type well contact region 6 electrically connected to the p-type well region 302 corresponds to the "second well contact region" according to the present invention.

[0068] Furthermore, the pixel separation region 4 provided between pixel 10L and pixel 10R has a truncated portion 43, which is formed by truncating another portion of the pixel separation region 4 in the extending direction. Figure 3 (The middle portion between pixel 10L and pixel 10R in the direction of arrow Y). An overflow path region 55 is embedded in the cut-off portion 43 along the depth direction of the semiconductor substrate 30. The overflow path region 55 is formed to include a p-type or n-type semiconductor region, the impurity concentration of which is lower than the impurity concentration of the p-type well region 302 covering the pixel separation region 4. Alternatively, the overflow path region 55 may include an i-type semiconductor region. In the overflow path region 55, excess charge is allowed to flow from one of the photoelectric conversion element PDL of pixel 10L to the other of the photoelectric conversion element PDR of pixel 10R.

[0069] like Figure 3 As shown, in pixel 10L, cut-off portions 41 and 42 are arranged diagonally in a plan view. In the diagonal cut-off portion 41, an n-type semiconductor region 54 is provided, serving as another main electrode for the transmission transistor TRL. In the diagonal cut-off portion 42, a p-type well contact region 6 is provided. Similarly, in pixel 10R, cut-off portions 41 and 42 are arranged diagonally in the plan view. In the diagonal cut-off portion 41, an n-type semiconductor region 54 is provided, serving as another main electrode for the transmission transistor TRR. In the diagonal cut-off portion 42, a p-type well contact region 6 is provided.

[0070] Furthermore, the pixel separation region 4 includes multiple truncated portions 41, 42, and 43. In other words, in the first embodiment, the pixel separation region 4 has at least two planar shapes in the planar view. That is, one is a pixel separation region (first pixel separation region) 4 formed in an L-shape in the planar view, which includes a portion extending along the arrow X direction and a portion extending along the arrow Y direction. The other is a pixel separation region (second pixel separation region) 4 formed in an I-shape, which extends along the arrow Y direction. Pixels 10L and 10R are each surrounded by a combination of corresponding pixel separation regions 4 with two planar shapes.

[0071] In the first embodiment, an I-shaped pixel separation region 4 is provided between the cut-off portion 41 of pixel 10L and the cut-off portion 41 of pixel 10R. Furthermore, an L-shaped pixel separation region 4 is provided between the cut-off portion 42 of pixel 10L and the cut-off portion 42 of pixel 10R. The planar shape of this pixel separation region 4 is integrally formed with the pixel separation region 4 of another pixel 10 adjacent on the opposite side of the arrow Y direction, and the planar shape of this pixel separation region 4 and the surrounding pixel separation regions 4 is formed into a cross shape.

[0072] Furthermore, in the first embodiment, the truncated portion 41 of the pixel separation region 4 surrounding pixel 10L has the same length as the truncated portion 41 of the pixel separation region 4 surrounding pixel 10R in the direction of arrow X. The truncated portion 42 of the pixel separation region 4 surrounding pixel 10L has the same length as the truncated portion 42 of the pixel separation region 4 surrounding pixel 10R in the direction of arrow X. Furthermore, the length of the cut-off portion 42 in the direction of arrow X is the same as the length of the cut-off portion 43 in the direction of arrow Y. In other words, the pixel separation region 4, the truncated portion 41, the truncated portion 42, and the truncated portion 43 are all formed into shapes with optical symmetry.

[0073] Furthermore, one or both of cut-off portions 41 and 42 are provided on the periphery of the optical lens 9, which will be explained later in the plan view. The peripheral portion of the optical lens 9 has a lower ability to converge light L, thereby effectively suppressing or preventing crosstalk.

[0074] Here, we mainly describe pixel 10,1 in the unit pixel; however, the other pixels 10,2,10,3 and 10,4 in the unit pixel are all formed into a shape that is linearly symmetrical to pixel 10,1. (4-4) Construction of optical filter 8

[0075] like Figure 4 As shown, an optical filter 8 is disposed on the first surface 30A of the semiconductor substrate 30. In the first embodiment, the optical filter 8 includes a red filter, a green filter, and a blue filter, that is, filters that filter the three primary colors of light respectively. In addition, the optical filter 8 may also include an infrared filter. Here, optical filters 8 of different colors are set for each unit pixel. (4-5) Construction of optical lens 9

[0076] like Figure 3 and Figure 4As shown, an optical lens 9 is disposed on the first surface 30A of the semiconductor substrate 30, passing through an optical filter 8. In the first embodiment, the optical lens 9 is disposed for each unit pixel, and its planar pattern is circular, and when viewed from the direction of arrow Y, it is formed into a curved shape protruding in the direction of arrow Z. That is, the optical lens 9 is formed into a shape that concentrates light L onto the photoelectric conversion element PD. Optical lens 9 is constructed as a so-called on-chip lens. [Functions and Effects]

[0077] like Figures 3 to 6 As shown, the light detection device 1 according to the first embodiment includes a pixel (first pixel) 10L, a pixel separation region 4, and a transmission transistor (first transmission transistor) TRL. In pixel 10L, a photoelectric conversion element (first photoelectric conversion element) PDL for converting light L into charge is disposed on the first surface 30A side of semiconductor substrate 30 (first substrate 1A). Pixel separation region 4 extends around the side of pixel 10L and optically and electrically separates pixel 10L from its surroundings. Transmission transistor TRL is disposed overlappingly on pixel 10L on the second surface 30B side of semiconductor substrate 30, and one of the pair of main electrodes of transmission transistor TRL (first main electrode) is electrically connected to photoelectric conversion element PDL. Furthermore, a cut-off portion 41 is provided, which is formed because a portion of the pixel separation region 4 in the extending direction is cut off at least on the second surface 30B side of the semiconductor substrate 30. The other of the pair of main electrodes of the transfer transistor TRL (the second main electrode) is provided in the cut-off portion 41. This other main electrode is the n-type semiconductor region 54. According to the light detection device 1 constructed in this manner, another main electrode of the transmission transistor TRL is disposed in the truncated portion 41 of the pixel separation region 4 in the extending direction, thereby allowing the other main electrode to be disposed overlappingly on the pixel separation region 4 in the extending direction. Therefore, the ratio of the area occupied by the transmission transistor TRL disposed in the pixel 10L to the area occupied by the pixel 10L can be reduced.

[0078] In addition, such as Figure 3 and Figure 4 As shown, in the light detection device 1, the distance Lgd between the gate electrode 52 of the transmission transistor TRL and the n-type semiconductor region 54, which serves as another main electrode, is maintained in the pixel 10L. The signal wiring 71 included in the floating diffusion section FD is connected to the n-type semiconductor region 54. The photodetector 1 constructed in this manner can effectively suppress or prevent the influence of the field strength from the gate electrode 52 of the transmission transistor TRL to the n-type semiconductor region 54, which serves as another main electrode. Therefore, the occurrence of white spots in the photodetector 1 can be improved.

[0079] In addition, such as Figures 3 to 6 As shown, the optical detection device 1 also includes a p-type well region (first well region) 302 and a p-type well contact region (first well contact region) 6. A transmission transistor (TRL) is disposed on the second surface 30B side of the p-well region 302. A p-well contact region 6 is disposed in a cut-off portion 42 formed because another portion of the pixel separation region 4 in the extension direction is truncated on at least the second surface 30B side of the p-well region 302. The p-well contact region 6 has the same conductivity type as the p-well region 302 and is electrically connected to the p-well region 302. According to the light detection device 1 constructed in this manner, a p-type well contact region 6 is provided in the truncated portion 41 of the pixel separation region 4 in the extending direction, thereby allowing the p-type well contact region 6 to be arranged overlappingly on the pixel separation region 4 in the extending direction. Therefore, the ratio of the area occupied by the p-type well contact region 6 provided in the pixel 10L to the area occupied by the pixel 10L can be reduced. In addition, the area occupied by the active region in pixel 10L can be increased; therefore, the full-well capacity can be increased.

[0080] In addition, such as Figures 3 to 6 As shown, the light detection device 1 according to the first embodiment includes a pixel (second pixel) 10R, a pixel separation region 4, and a transmission transistor (second transmission transistor) TRR. In pixel 10R, a photoelectric conversion element (second photoelectric conversion element) PDR for converting light L into charge is disposed on the first surface 30A side of semiconductor substrate 30 (first substrate 1A). Pixel separation region 4 extends around the side of pixel 10R and optically and electrically separates pixel 10R from its surroundings. Transmission transistor TRR is disposed overlappingly on pixel 10R on the second surface 30B side of semiconductor substrate 30, and one of the pair of main electrodes of transmission transistor TRR (third main electrode) is electrically connected to photoelectric conversion element PDR. Furthermore, a cut-off portion 41 is provided, which is formed by cutting off a portion of the pixel separation region 4 in the extension direction at least on the second surface 30B side of the semiconductor substrate 30. The other of the pair of main electrodes of the transfer transistor TRR (the fourth main electrode) is provided in the cut-off portion 41. This other main electrode is the n-type semiconductor region 54. According to the light detection device 1 constructed in this way, the ratio of the area occupied by the transmission transistor TRR disposed in the pixel 10R to the area occupied by the pixel 10R can be reduced.

[0081] In addition, such as Figure 3 and Figure 4 As shown, in the light detection device 1, the distance Lgd between the gate electrode 52 of the transmission transistor TRR and the n-type semiconductor region 54, which serves as another main electrode, is ensured in the pixel 10R. The photodetector 1 constructed in this manner can effectively suppress or prevent the influence of the field strength from the gate electrode 52 of the transmission transistor TRR to the n-type semiconductor region 54, which serves as another main electrode. Therefore, the occurrence of white spots in the photodetector 1 can be improved.

[0082] In addition, such as Figures 3 to 6 As shown, the optical detection device 1 also includes a p-type well region (second well region) 302 and a p-type well contact region (second well contact region) 6. A transmission transistor (TRR) is disposed on the second surface 30B side of the p-type well region 302. A p-type well contact region 6 is disposed in a cut-off portion 42 formed because another portion of the pixel separation region 4 in the extension direction is truncated on at least the second surface 30B side of the p-type well region 302. The p-type well contact region 6 has the same conductivity type as the p-type well region 302 and is electrically connected to the p-type well region 302. According to the light detection device 1 constructed in this way, the ratio of the area occupied by the p-type well contact region 6 provided in the pixel 10R to the area occupied by the pixel 10R can be reduced. In addition, the area occupied by the active region in pixel 10R can be increased; therefore, the full-well capacity can be increased.

[0083] In addition, such as Figure 3 and Figure 5 As shown, the light detection device 1 is provided with an overflow path region 55. The overflow path region 55 is provided in the cut-off portion 43, which is formed by cutting off another portion of the pixel separation region 4 provided between pixel 10L and pixel 10R in the extending direction. The overflow path region 55 allows excess charge to flow from one of the photoelectric conversion element PDL of pixel 10L and the photoelectric conversion element PDR of pixel 10R to the other. The proportion of the area occupied by the transmission transistor TRL in pixel 10L is reduced, and the proportion of the area occupied by the transmission transistor TRR in pixel 10R is also reduced. In other words, the degree of freedom in the arrangement of the transmission transistors TRL and TRR can be increased. Therefore, the positions of the transmission transistors TRL and TRR can be placed closer to the overflow path region 55. The optical detection device 1 constructed in this manner can reduce the influence of the diffusion region around the overflow path region 55 and can easily generate a transfer potential.

[0084] In addition, such as Figure 3 and Figure 4 As shown, in the light detection device 1, the optical lens 9 is disposed on the first surface 30A side of the semiconductor substrate 30 and is located above the pixels 30L and 30R. Furthermore, in the plan view, one or more of the following are disposed on the periphery of the optical lens 9: another main electrode (n-type semiconductor region 54) of each of the transmission transistors TRL and TRR, and the p-type well contact region 6. According to the optical detection device 1 constructed in this manner, the peripheral portion of the optical lens 9 has a lower ability to converge light L, thereby effectively suppressing or preventing crosstalk.

[0085] In addition, such as Figure 3 As shown, in the light detection device 1, pixel 10R is formed in a planar view with a shape that has optical symmetry with pixel 10L. Here, not only the shapes of pixels 10L and 10R, but also the shapes of transmission transistors TRL and TRR, the shape of pixel separation region 4, etc., also have optical symmetry. Therefore, anisotropic color mixing (crosstalk) related to incident light reflection can be effectively suppressed or prevented. <2. Second Embodiment>

[0086] use Figure 7 The light detection device 1 according to the second embodiment of the present disclosure is described. The second embodiment illustrates a variation of the circuit configuration of the pixel 10 and pixel circuit 20 in the light detection device 1 according to the first embodiment. It should be noted that in the second and subsequent embodiments, components that are the same as or substantially the same as components of the light detection device 1 in the first embodiment are given the same reference numerals, and their repeated descriptions are omitted. [Circuit structure of pixel 10 and pixel circuit 20 of light detection device 1]

[0087] Figure 7 An example of the circuit structure of the pixel 10 and pixel circuit 20 of the light detection device 1 is shown. like Figure 7 As shown, in the light detection device 1 according to the second embodiment, a pixel 10 is electrically connected to a pixel circuit 20. A pixel 10 electrically connected to a pixel circuit 20 constitutes a unit pixel. That is, a unit pixel includes a "1×1" pixel array.

[0088] As with the pixel 10 of the light detection device 1 according to the first embodiment, pixel 10 is constructed as a phase difference detection pixel. That is, pixel 10 includes pixel 10L and pixel 10R.

[0089] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0090] In the light detection device 1 according to the second embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved. <3. Third Embodiment>

[0091] use Figure 8 The light detection device 1 according to the third embodiment of this disclosure is described. The third embodiment illustrates a variation of the circuit configuration of the pixel 10 and pixel circuit 20 in the light detection device 1 according to the first embodiment. [Circuit structure of pixel 10 and pixel circuit 20 of light detection device 1]

[0092] Figure 8 An example of the circuit structure of the pixel 10 and pixel circuit 20 of the light detection device 1 is shown. like Figure 8 As shown, in the light detection device 1 according to the third embodiment, two pixels 10,1 and 10,2 are electrically connected to a pixel circuit 20, and the two pixels 10 share the same pixel circuit 20. These two pixels 10 sharing the same pixel circuit 20 constitute a unit pixel. That is, a unit pixel comprises a "2×1" pixel array.

[0093] Similar to the pixel 10 of the light detection device 1 according to the first embodiment, pixels 10,1 and 10,2 are constructed as phase difference detection pixels. That is, each pixel 10 includes pixel 10L and pixel 10R.

[0094] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0095] In the light detection device 1 according to the third embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved. <4. Fourth Embodiment>

[0096] use Figure 9 The light detection device 1 according to the fourth embodiment of this disclosure is described. The fourth embodiment illustrates a variation of the circuit configuration of the pixel 10 and pixel circuit 20 in the light detection device 1 according to the first embodiment. [Circuit structure of pixel 10 and pixel circuit 20 of light detection device 1]

[0097] Figure 9 An example of the circuit structure of the pixel 10 and pixel circuit 20 of the light detection device 1 is shown. like Figure 9 As shown, in the light detection device 1 according to the fourth embodiment, as in the light detection device 1 according to the first embodiment, four pixels 10,1 to 10,4 are electrically connected to a pixel circuit 20, and the four pixels 10 share the same pixel circuit 20. These four pixels 10 sharing the same pixel circuit 20 constitute a unit pixel. That is, the unit pixel includes a "2×2" pixel array.

[0098] In the fourth embodiment, unlike the pixel 10 of the light detection device 1 according to the first embodiment, the pixel 10 is constructed as a normal pixel instead of a phase difference detection pixel.

[0099] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0100] In the light detection device 1 according to the fourth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved. <5. Fifth Embodiment>

[0101] use Figure 10 The light detection device 1 according to the fifth embodiment of this disclosure is described. The fifth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the first embodiment. [The structure of pixel 10 in light detection device 1]

[0102] Figure 10 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 10 As shown, in the light detection apparatus 1 according to the fifth embodiment, pixel 10L (one pixel included in the pixel 10 constituting the phase difference detection pixel) includes a transmission transistor TRL, which includes a plurality of transmission transistors TRL1 and TRL2. The transmission transistors TRL1 and TRL2 are electrically connected in parallel. In the fifth embodiment, the transmission transistor TRL includes two transmission transistors TRL1 and TRL2, and is therefore constructed as a twin-gate structure.

[0103] Similarly, pixel 10R (another pixel included in pixel 10 that constitutes the phase difference detection pixel) includes a transfer transistor TRR, which comprises multiple transfer transistors TRR1 and TRR2. Transfer transistors TRR1 and TRR2 are electrically connected in parallel. Like the transfer transistor TRL, the transfer transistor TRR is constructed as a dual-gate structure.

[0104] Furthermore, the transmission transistors TRL1 and TRL2 disposed in pixel 10L of pixel 10,1 and in pixel 10L of pixel 10,2 are arranged around the cut-off portion 41 with the cut-off portion 41 as the center. That is, a total of four transmission transistors TRL1 and TRL2 are disposed, and they are arranged around the n-type semiconductor region 54 or signal wiring 71, which serves as another main electrode, with the n-type semiconductor region 54 or signal wiring 71 as the center, so that the n-type semiconductor region 54 or signal wiring 71 is surrounded by four transmission transistors TRL1 and TRL2.

[0105] Similarly, the transmission transistors TRR1 and TRR2 disposed in pixel 10R of pixel 10,1 and in pixel 10R of pixel 10,2 are arranged around the cut-off portion 41 with the cut-off portion 41 as the center. That is, a total of four transmission transistors TRR1 and TRR2 are disposed, which are arranged around the n-type semiconductor region 54 or signal wiring 71, which serves as another main electrode, with the n-type semiconductor region 54 or signal wiring 71 as the center, so that the n-type semiconductor region 54 or signal wiring 71 is surrounded by four transmission transistors TRR1 and TRR2.

[0106] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0107] The light detection device 1 according to the fifth embodiment can achieve similar functions and effects as the light detection device 1 according to the first embodiment. Furthermore, in the photodetector 1, the transmission transistor TR is constructed as a multi-gate structure. By constructing the photodetector 1 in this manner, the full-well capacity can be increased, thereby expanding the dynamic range of photodetection.

[0108] It should be noted that the light detection device 1 according to the fifth embodiment can be combined with the light detection device 1 according to any of the first to fourth embodiments and the sixth and subsequent embodiments. <6. Sixth Embodiment>

[0109] use Figure 11 and Figure 12 The light detection device 1 according to the sixth embodiment of this disclosure is described. The sixth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the first embodiment. [The structure of pixel 10 in light detection device 1]

[0110] Figure 11 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 12 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 11 and Figure 12 As shown, in the light detection apparatus 1 according to the sixth embodiment, pixel 10L (one of the pixels 10 constituting the phase difference detection pixel) is provided with a cutoff portion 42 located in the lower right part of the plan view. The cutoff portion 42 is provided with a p-type well contact region 6, and the p-type well contact region 6 is electrically connected to the p-type well region 302.

[0111] Similar to the truncated portion 41, the truncated portion 42 is disposed between the L-shaped pixel separation region 4 and the I-shaped pixel separation region 4 in the plan view. Here, the length of the truncated portion 42 in the direction of arrow X is the same as the length of the truncated portion 41 in the direction of arrow X.

[0112] Similarly, pixel 10R (another pixel included in pixel 10 constituting the phase difference detection pixel) is provided with a cutoff portion 42 located in the lower left part of the plan view. The cutoff portion 42 is provided with a p-type well contact region 6, and the p-type well contact region 6 is electrically connected to the p-type well region 302. The cut-off portion 42 is disposed between the L-shaped pixel separation region 4 and the I-shaped pixel separation region 4 in the plan view, and the length of the cut-off portion 42 in the direction of arrow X is the same as the length of the cut-off portion 41 in the same direction.

[0113] Similar to the cut-off portion 41, the cut-off portion 42 is disposed on the periphery of the optical lens 9. In other words, the placement of the cut-off portions 41 and 42 enables the improvement of optical symmetry centered on the center position of the optical lens 9.

[0114] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0115] In the light detection device 1 according to the sixth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved.

[0116] In addition, such as Figure 11 and Figure 12As shown, in the light detection device 1, the positions of the cut-off portions 41 and 42 enable the improvement of optical symmetry centered on the center position of the optical lens 9. The light detection device 1 constructed in this manner can effectively suppress or prevent anisotropic color mixing related to the reflection of incident light. <7. Seventh Embodiment>

[0117] use Figure 13 and Figure 14 The light detection apparatus 1 according to the seventh embodiment of this disclosure is described. The seventh embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the sixth embodiment. [The structure of pixel 10 in light detection device 1]

[0118] Figure 13 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 14 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 13 and Figure 14 As shown, in the light detection apparatus 1 according to the seventh embodiment, the pixel 10L (one of the pixels 10 constituting the phase difference detection pixel) is provided with a cutoff portion 42 located in the lower left part of the plan view. The cutoff portion 42 is provided with a p-type well contact region 6, and the p-type well contact region 6 is electrically connected to the p-type well region 302.

[0119] The truncated portion 42 is disposed between the L-shaped pixel separation regions in the plan view. Here, the length of the truncated portion 42 in the X-direction is the same as the length of the truncated portion 41 in the X-direction. Furthermore, the cut-off portion 42 is separated from the cut-off portion 42 of the pixel 10R of the pixel 10 adjacent to the pixel 10 on the opposite side in the direction of arrow X by the pixel separation region 4 between them.

[0120] Similarly, pixel 10R (another pixel included in pixel 10 constituting the phase difference detection pixel) is provided with a cutoff portion 42 located in the lower right part of the plan view. The cutoff portion 42 is provided with a p-type well contact region 6, and the p-type well contact region 6 is electrically connected to the p-type well region 302. The cut-off portion 42 is disposed between the L-shaped pixel separation regions 4 in the plan view, and the length of the cut-off portion 42 in the direction of arrow X is the same as the length of the cut-off portion 41 in the same direction. Furthermore, the cut-off portion 42 is separated from the cut-off portion 42 of the pixel 10L of the pixel 10 adjacent to the pixel 10 on the opposite side in the direction of arrow X by the pixel separation region 4 between them.

[0121] Similar to the cut-off portion 41, the cut-off portion 42 is disposed on the periphery of the optical lens 9. In other words, the placement of the cut-off portions 41 and 42 enables the improvement of optical symmetry centered on the center position of the optical lens 9.

[0122] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0123] In the light detection device 1 according to the seventh embodiment, similar functions and effects as those achieved by the light detection device 1 according to the sixth embodiment can be achieved. <8. Eighth Embodiment>

[0124] use Figure 15 and Figure 16 The optical detection apparatus 1 according to the eighth embodiment of this disclosure is described. The eighth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the first embodiment. [The structure of pixel 10 in light detection device 1]

[0125] Figure 15 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 16 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 15 and Figure 16 As shown, in the light detection device 1 according to the eighth embodiment, pixel 10L (one of the pixels 10 constituting the phase difference detection pixel) is provided with a p-type well contact region 6 located at the lower left corner in the plan view. In the eighth embodiment, the cut-off portion 42 is not provided. That is, the p-type well contact region 6 is provided on the second surface 30B side of the p-type well region 302 and is located in a region that is partially surrounded by the pixel separation region 4.

[0126] Although there are no specific restrictions on the shape, the p-type trap contact area 6 here forms a triangle in the plan view.

[0127] Similarly, pixel 10R (another pixel included in pixel 10 constituting the phase difference detection pixel) is provided with a p-type well contact region 6 located at the lower right corner in the plan view. The p-type well contact region 6 is provided on the second surface 30B side of the p-type well region 302 and is located in an area that is partially surrounded by the pixel separation region 4. Here, the p-type well contact region 6 is formed as a triangle in the plan view.

[0128] The p-type well contact region 6 is disposed on the outer edge of the optical lens 9. In other words, the placement of the p-type well contact region 6 enables the improvement of optical symmetry centered on the center position of the optical lens 9.

[0129] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0130] In the light detection device 1 according to the eighth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved. <9. Ninth Embodiment>

[0131] use Figure 17 The light detection apparatus 1 according to the ninth embodiment of this disclosure is described. The ninth embodiment illustrates an example of a combination of the light detection device 1 according to the fifth embodiment and the light detection device 1 according to the eighth embodiment. [The structure of pixel 10 in light detection device 1]

[0132] Figure 17 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 17 As shown, in the light detection device 1 according to the ninth embodiment, as in the light detection device 1 according to the fifth embodiment, pixel 10L of pixel 10 includes a transmission transistor TRL, which includes a plurality of transmission transistors TRL1 and TRL2. Furthermore, pixel 10R of pixel 10 includes a transmission transistor TRR, which includes a plurality of transmission transistors TRR1 and TRR2.

[0133] Furthermore, in the light detection device 1, as in the light detection device 1 according to the eighth embodiment, pixel 10L is provided with a p-type well contact area 6 located at the lower left corner in the plan view. Pixel 10R is provided with a p-type well contact area 6 located at the lower right corner in the plan view. The cutoff portion 42 is not provided.

[0134] The components other than those described above are the same as or substantially the same as the corresponding components of the light detection device 1 according to the fifth and eighth embodiments. [Functions and Effects]

[0135] In the light detection device 1 according to the ninth embodiment, the functions and effects achieved by the light detection device 1 according to the fifth embodiment and the functions and effects achieved by the light detection device 1 according to the eighth embodiment can be realized. <10. Tenth Embodiment>

[0136] use Figure 18 and 19 The light detection apparatus 1 according to the tenth embodiment of this disclosure is described. The tenth embodiment illustrates a variation of the planar structure and vertical cross-sectional structure of the pixel 10 in the light detection device 1 according to the first embodiment. [The structure of pixel 10 in light detection device 1]

[0137] Figure 18 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 19 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 18 and Figure 19 As shown, in the light detection device 1 according to the eighth embodiment, in the pixels 10L and 10R of the pixel 10 that constitute the phase difference detection pixel, the cut-off portion 41 is integrally formed in the pixel separation region 4 surrounding the pixels 10L and 10R.

[0138] This will be explained in detail. The pixel separation region 4 between the cut-off portion 41 provided in the pixel separation region 4 surrounding pixel 10L and the cut-off portion 41 provided in the pixel separation region 4 surrounding pixel 10L is removed. The two cut-off portions 41 are formed into one cut-off portion 41.

[0139] One of these cut-off portions 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode for the corresponding transmission transistors TRL and TRR of pixels 10L and 10R of pixels 10,1. In addition, the n-type semiconductor region 54 also serves as another main electrode for the corresponding transmission transistors TRL and TRR of pixels 10L and 10R of adjacent pixels 10,2 in the direction of arrow Y. In other words, an n-type semiconductor region 54 disposed in a cut-off section 41 is used as another main electrode of the four transmission transistors TR.

[0140] It should be noted that the structure of the cut-off portion 42 and the p-type well contact area 6 is similar to the structure of the cut-off portion 42 and the p-type well contact area 6 of the photodetector 1 according to the first embodiment.

[0141] Furthermore, in the tenth embodiment, an overflow path region 55 is provided in the cut-off portion 41. This will be described in detail. In pixels 10,1, the overflow path region 55 is provided in the plan view between the extending end of the pixel separation region 4 located between pixels 10L and 10R and the n-type semiconductor region 54. In other words, the cutoff portion 43 necessary for setting up the overflow path region 55 (see, for example, see...) Figure 3It is incorporated into the cut-off section 41 (integrated with it) and is not effectively set.

[0142] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0143] In the light detection device 1 according to the tenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved.

[0144] In addition, such as Figure 18 and Figure 19 As shown, in the light detection device 1, the number of cut-off portions 41 in the pixel separation region 4 is reduced, and furthermore, no cut-off portion 43 is provided; therefore, anisotropic color mixing related to incident light reflection at the end of the pixel separation region 4 can be effectively suppressed or prevented. <11. Eleventh Embodiment>

[0145] use Figure 20 and Figure 21 The light detection apparatus 1 according to the eleventh embodiment of this disclosure is described. The eleventh embodiment illustrates an example of a combination of the light detection device 1 according to the eighth embodiment and the light detection device 1 according to the tenth embodiment. [The structure of pixel 10 in light detection device 1]

[0146] Figure 20 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 21 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 20 and Figure 21 As shown, in the light detection apparatus 1 according to the eleventh embodiment, as in the light detection apparatus 1 according to the tenth embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of the pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0147] Furthermore, in the light detection device 1 according to the eleventh embodiment, as in the light detection device 1 according to the eighth embodiment, in the plan view, a p-type well contact area 6 is provided at the lower left corner of pixel 10L and a p-type well contact area 6 is provided at the lower right corner of pixel 10R.

[0148] The components other than those described above are the same as or substantially the same as the corresponding components of the light detection device 1 according to the eighth and tenth embodiments. [Functions and Effects]

[0149] In the light detection device 1 according to the eleventh embodiment, the functions and effects achieved by the light detection device 1 according to the eighth embodiment and the functions and effects achieved by the light detection device 1 according to the tenth embodiment can be realized. <12. Twelfth Embodiment>

[0150] use Figure 22 and Figure 23 The light detection device 1 according to the twelfth embodiment of this disclosure is described. The twelfth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel in the light detection device according to the tenth embodiment. [The structure of pixel 10 in light detection device 1]

[0151] Figure 22 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 23 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 22 and Figure 23 As shown, in the light detection apparatus 1 according to the twelfth embodiment, a cutoff portion 43 is provided in the middle portion along the extending direction (arrow Y direction) in the pixel separation region 4 between pixels 10L and 10R, which constitute the phase difference detection pixel of pixel 10. This cutoff portion 43 is provided with an overflow path region 55.

[0152] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the tenth embodiment. [Functions and Effects]

[0153] In the light detection device 1 according to the twelfth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the tenth embodiment can be achieved.

[0154] Furthermore, in the light detection device 1, especially as Figure 22 As shown, the cut-off portion 43 is disposed in the middle part of the pixel separation region 4 along the extension direction, and the cut-off portion 43 is provided with an overflow path region 55. According to the optical detection device 1 constructed in this manner, the overflow path region 55 is set in the middle part of pixels 10L and 10R of pixel 10 along the direction of arrow Y; therefore, the transmission potential can be stably generated. <13. Thirteenth Embodiment>

[0155] use Figure 24 and Figure 25 The light detection apparatus 1 according to the thirteenth embodiment of this disclosure is described. The thirteenth embodiment illustrates an example of a combination of the light detection device 1 according to the eleventh embodiment and the light detection device 1 according to the twelfth embodiment. [The structure of pixel 10 in light detection device 1]

[0156] Figure 24 An example showing the specific planar structure of the pixel 10 of the light detection device 1 is illustrated. Figure 25 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 24 and Figure 25 As shown, in the light detection apparatus 1 according to the thirteenth embodiment, like the light detection apparatus 1 according to the eleventh embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of the pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0157] Furthermore, in the light detection device 1, in the plan view, a p-type well contact area 6 is provided at the lower left corner of pixel 10L, and a p-type well contact area 6 is provided at the lower right corner of pixel 10R.

[0158] Furthermore, in the light detection device 1 according to the thirteenth embodiment, as in the light detection device 1 according to the twelfth embodiment, a cutoff portion 43 is provided in the middle portion along the extending direction in the pixel separation region 4 between pixels 10L and 10R of pixel 10. This cutoff portion 43 is provided with an overflow path region 55.

[0159] The components other than those described above are the same as or substantially the same as the corresponding components of the optical detection device 1 according to the eleventh and twelfth embodiments. [Functions and Effects]

[0160] In the light detection device 1 according to the thirteenth embodiment, the functions and effects achieved by the light detection device 1 according to the tenth embodiment and the functions and effects achieved by the light detection device 1 according to the twelfth embodiment can be combined to form the functions and effects. <14. Fourteenth Embodiment>

[0161] use Figure 26 The light detection apparatus 1 according to the fourteenth embodiment of this disclosure is described. The fourteenth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the tenth embodiment. [The structure of pixel 10 in light detection device 1]

[0162] Figure 26An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 26 As shown, in the light detection apparatus 1 according to the fourteenth embodiment, as in the light detection apparatus 1 according to the tenth embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0163] Meanwhile, within the pixel separation region 4 between pixels 10L and 10R of pixel 10, a cut-off portion 42 is provided at the end of the extension direction in the opposite direction of arrow Y. Like the cut-off portion 41, this cut-off portion 42 is integrally formed by the corresponding cut-off portions 42 of pixels 10L and 10R. The cut-off portion 42 is provided with a p-type well contact area 6. The p-type well contact area 6 is electrically connected to and shared by the corresponding p-type well areas 302 of pixels 10L and 10R.

[0164] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the tenth embodiment. [Functions and Effects]

[0165] In the light detection device 1 according to the fourteenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the tenth embodiment can be achieved.

[0166] In addition, such as Figure 26 As shown, in the light detection device 1, the cut-off portions 41 and 42 are shared in pixels 10L and 10R. Therefore, in the light detection device 1, the number of cut-off portions 41 and 42 in the pixel separation region 4 can be reduced; thus, anisotropic color mixing related to incident light reflection can be effectively suppressed or prevented at the ends of the pixel separation region 4. <15. Fifteenth Embodiment>

[0167] use Figure 27 The light detection apparatus 1 according to the fifteenth embodiment of this disclosure is described. The fifteenth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the fourteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0168] Figure 27 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 27As shown, in the light detection apparatus 1 according to the fifteenth embodiment, as in the light detection apparatus 1 according to the fourteenth embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of the pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0169] Furthermore, a cutoff portion 42 is provided in pixels 10L and 10R. This cutoff portion 42 is provided with a p-type well contact area 6. The p-type well contact area is electrically connected to the corresponding p-type well area 302 of pixels 10L and 10R.

[0170] Furthermore, in the light detection apparatus 1 according to the fifteenth embodiment, a cutoff portion 45 is provided in the pixel separation region 4 between pixel 10L of pixel 10,1 and pixel 10R of pixel 10,3 adjacent on the opposite side in the direction of arrow X. The cutoff portion 45 is provided in the middle portion of the pixel separation region 4 along the extending direction in the direction of arrow Y. Similarly, in pixel separation region 4, a cutoff portion 45 is provided between pixel 10R of pixel 10,1 and pixel 10L of adjacent pixel 10,3 in the direction of arrow X. The cutoff portion 45 is provided in the middle portion of pixel separation region 4 in the extending direction.

[0171] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the fourteenth embodiment. [Functions and Effects]

[0172] In the light detection device 1 according to the fifteenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the fourteenth embodiment can be achieved.

[0173] In addition, such as Figure 27 As shown, in the light detection device 1, between adjacent pixels 10 in the direction of arrow X, a cutoff portion 45 is provided in the middle portion along the extending direction of the pixel separation region 4. In other words, the number of cutoff portions 45 in the direction of arrow X of the pixel separation region 4 is equal to the number of cutoff portions 41 and 42 in the direction of arrow Y of the pixel separation region 4; therefore, anisotropic color mixing can be effectively suppressed or prevented. <16. Sixteenth Embodiment>

[0174] use Figure 28 The light detection device 1 according to the sixteenth embodiment of this disclosure is described. The sixteenth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the fifteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0175] Figure 28 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 28 As shown, in the light detection device 1 according to the sixteenth embodiment, a pixel separation region 4 extending in the direction of arrow Y is disposed between pixels 10L and 10R of pixel 10 in the light detection device 1 according to the fifteenth embodiment. A portion 46 of the pixel separation region 4 extends from the middle portion of the pixel separation region 4 in the extending direction to pixels 10L and 10R in the direction of arrow X and the opposite direction of arrow X. The pixel separation region 4 and the portion 46 are formed in a cross shape in the plan view.

[0176] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the fifteenth embodiment. [Functions and Effects]

[0177] In the light detection device 1 according to the sixteenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the fourteenth embodiment can be achieved.

[0178] In addition, such as Figure 28 As shown, in the light detection device 1, between pixels 10L and 10R of pixel 10, a portion 46 of the pixel separation region 4 extends in the middle portion of the pixel separation region 4 in the extending direction. The ends of these portions 46 in the extending direction can be considered as truncated portions. Therefore, in addition to the truncated portion 45 of the pixel separation region 4 in the direction of arrow X, more truncated portions can be added in the same direction; thus, anisotropic color mixing can be effectively suppressed or prevented. <17. Seventeenth Embodiment>

[0179] use Figure 29 The light detection apparatus 1 according to the seventeenth embodiment of this disclosure is described. The seventeenth example illustrates a variation of the planar structure and vertical cross-sectional construction of pixel 10 in the light detection device 1 according to the sixteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0180] Figure 29 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 29 As shown, in the light detection apparatus 1 according to the seventeenth embodiment, a pixel separation region 4 and its portions 46 are provided between pixels 10L and 10R of the pixel 10 in the light detection apparatus 1 according to the sixteenth embodiment. The pixel separation region 4 and the portions 46 are formed in a cross shape in the plan view.

[0181] Furthermore, in the light detection device 1 according to the seventeenth embodiment, the cut-off portion 45 of the light detection device 1 according to the fifteenth embodiment is not provided.

[0182] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the sixteenth embodiment. [Functions and Effects]

[0183] In the light detection device 1 according to the seventeenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the sixteenth embodiment can be achieved. <18. Eighteenth Embodiment>

[0184] use Figure 30 and Figure 31 The light detection device 1 according to the eighteenth embodiment of this disclosure is described. The eighteenth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the fourteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0185] Figure 30 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 31 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 30 and Figure 31 As shown, in the light detection apparatus 1 according to the eighteenth embodiment, as in the light detection apparatus 1 according to the fourteenth embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of the pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0186] Furthermore, the cut-off portion 41 is also shared by the pixels 10,2 adjacent to pixel 10,1 in the direction of arrow Y. That is, the n-type semiconductor region 54 provided in the cut-off portion 41 serves as another main electrode of the corresponding transmission transistor TR of pixels 10,1 and 10,2.

[0187] Simultaneously, a cutoff portion 42 is provided in pixels 10L and 10R of pixel 10. This cutoff portion 42 is provided with a p-type well contact region 6. The p-type well contact region 6 is electrically connected to the corresponding p-type well region 302 of pixels 10L and 10R. That is, the p-type well contact region 6 of pixels 10L and 10R is shared.

[0188] Here, the cut-off portion 42 is not shared by the pixels 10,2 adjacent to pixel 10,1 on the opposite side of the arrow Y direction. That is, the pixel separation region 4 extending along the arrow X direction is located between the cut-off portion 42 located in pixel 10,1 and the cut-off portion 42 located in pixel 10,2.

[0189] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the fourteenth embodiment. [Functions and Effects]

[0190] In the light detection device 1 according to the eighteenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the fourteenth embodiment can be achieved. <19. Nineteenth Embodiment>

[0191] use Figure 32 The light detection apparatus 1 according to the nineteenth embodiment of this disclosure is described. The nineteenth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the eighteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0192] Figure 32 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 32 As shown, in the light detection apparatus 1 according to the nineteenth embodiment, a cutoff portion 41 is provided in pixels 10L and 10R of pixel 10. This cutoff portion 41 is provided with an n-type semiconductor region 54. The n-type semiconductor region 54 serves as another main electrode of the corresponding transmission transistor TR of pixels 10L and 10R.

[0193] Furthermore, the cut-off portion 41 is shared by the pixels 10,2 adjacent to pixel 10,1 in the direction of arrow Y. That is, the pixel separation region 4 extending in the direction of arrow X is provided between the cut-off portion 41 provided in pixel 10,1 and the cut-off portion 41 provided in pixel 10,2.

[0194] Meanwhile, as with the light detection device 1 according to the eighteenth embodiment, a cutoff portion 42 is provided in pixels 10L and 10R of pixel 10. This cutoff portion 42 is provided with a p-type well contact region 6. The p-type well contact region 6 is electrically connected to the corresponding p-type well region 302 of pixels 10L and 10R.

[0195] The cut-off portion 42 is not shared by the pixels 10,2 adjacent to pixel 10,1 on the opposite side of the arrow Y direction. That is, the pixel separation region 4 extending along the arrow X direction is located between the cut-off portion 42 located in pixel 10,1 and the cut-off portion 42 located in pixel 10,2.

[0196] In addition, a pixel separation region 4 and a portion 46, which are formed in a cross shape in the planar view, are provided between pixels 10L and 10R of pixel 10.

[0197] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the eighteenth embodiment. [Functions and Effects]

[0198] In the light detection device 1 according to the nineteenth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the eighteenth embodiment can be achieved. <20. Twentieth Embodiment>

[0199] use Figure 33 and Figure 34 The light detection device 1 according to the twentieth embodiment of this disclosure is described. The twentieth embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the tenth embodiment. [The structure of pixel 10 in light detection device 1]

[0200] Figure 33 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 34 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 33 and Figure 34 As shown, the light detection device 1 according to the twentieth embodiment further includes a dark current prevention region 305 and a charge storage region 306 in the light detection device 1 according to the tenth embodiment.

[0201] Dark current prevention region 305 is disposed in a region different from the region of the transmission transistor TR of pixel 10, and is located on the second surface 30B side of p-type well region 302. Dark current prevention region 305 is formed to include a p-type semiconductor region, the impurity concentration of which is higher than the impurity concentration of p-type well region 302.

[0202] In the thickness direction of the semiconductor substrate 30, a charge storage region 306 is disposed between the n-type semiconductor region 301 and the dark current prevention region 305 of the photoelectric conversion element PD of the pixel 10. The charge storage region 306 is formed as an n-type semiconductor region, and the impurity concentration of the n-type semiconductor region is higher than that of the n-type semiconductor region 301.

[0203] Furthermore, in the twentieth embodiment, a pixel separation region 4 extending along the direction of arrow Y is disposed between pixel 10L of pixel 10,1 and pixel 10R of pixel 10,3 adjacent on the opposite side of the direction of arrow X. A portion 47 of the pixel separation region 4 extends from the middle portion of the pixel separation region 4 in the extending direction to pixel 10L of pixel 10,1. Furthermore, a pixel separation region 4 extending along the direction of arrow Y is disposed between pixel 10R of pixel 10,1 and pixel 10L of the adjacent pixel 10,3 in the direction of arrow X. A portion 47 of the pixel separation region 4 extends from the middle portion of the pixel separation region 4 in the extending direction to pixel 10R of pixel 10,1. The pixel separation region 4 and part 47 together with part 47 of the adjacent pixels 10,3 on the opposite side of the arrow X direction form a cross shape in the planar view.

[0204] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the tenth embodiment. [Functions and Effects]

[0205] In the light detection device 1 according to the twentieth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the tenth embodiment can be achieved.

[0206] In addition, such as Figure 33 and Figure 34 As shown, the light detection device 1 includes a dark current prevention region 305 and a charge storage region 306. The light detection device 1 constructed in this manner is provided with a dark current prevention region 305 that can effectively suppress or prevent dark current. Furthermore, in the light detection device 1, the charge storage region 306 is disposed almost over the entire region of the pixel 10, excluding the region of the transfer transistor TR. This facilitates the transfer of charge converted by the photoelectric conversion element PD to the transfer transistor TR. For example, a portion 47 of the pixel separation region 4 is disposed in the middle portion of the pixel 10L in the direction of arrow Y. Using this portion 47 as a boundary, Figure 33 The charge generated on the lower side of pixel 10L is difficult to transfer to the transfer transistor TRL disposed on the upper side of pixel 10L. In the twentieth embodiment, the charge storage region 306 makes it easy to transfer charge to the transfer transistor TR.

[0207] In addition, such as Figure 33 and Figure 34As shown, in the light detection device 1, between adjacent pixels 10, a portion 47 of the pixel separation region 4 extends in the middle part of the pixel separation region 4 in the extending direction. The ends of these portions 47 in the extending direction can be considered as truncated portions. Therefore, truncated portions of the pixel separation region 4 can be added in the direction of arrow X; thus, anisotropic color mixing can be effectively suppressed or prevented. <21. Twenty-first embodiment>

[0208] use Figure 35 and Figure 36 The light detection device 1 according to the twenty-first embodiment of this disclosure is described. The twenty-first embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the twenty-first embodiment. [The structure of pixel 10 in light detection device 1]

[0209] Figure 35 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. Figure 36 An example of the specific vertical cross-sectional construction of pixel 10 is shown. like Figure 35 and Figure 36 As shown, the light detection device 1 according to the twenty-first embodiment does not include the cut-off portions 41 and 42 of the light detection device 1 according to the twenty-tenth embodiment. A semiconductor region 54 is provided. The n-type semiconductor region 54 serves as another main electrode of the transmission transistor TRR. Furthermore, in the pixel 10R, a p-type well contact region 6 is provided at the lower right corner portion surrounded by the pixel separation region 4. The p-type well contact region 6 is electrically connected to the p-type well region 302.

[0210] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the twentieth embodiment. [Functions and Effects]

[0211] In the light detection device 1 according to the twenty-first embodiment, similar functions and effects as those achieved by the light detection device 1 according to the twenty-tenth embodiment can be achieved. <22. Twenty-second embodiment>

[0212] use Figure 37 The light detection device 1 according to the twenty-second embodiment of this disclosure is described. The twenty-second embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the twenty-first embodiment. [The structure of pixel 10 in light detection device 1]

[0213] Figure 37An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 37 As shown, the light detection device 1 according to the twenty-second embodiment includes a cut-off portion 41 but does not include a cut-off portion 42 in the light detection device 1 according to the twenty-first embodiment.

[0214] This will be explained in detail. The cut-off portion 41 is provided in the middle portion of the pixel separation region 4 between pixels 10L and 10R of pixel 10 in the extending direction. The cut-off portion 41 is provided with an n-type semiconductor region 54. Furthermore, in pixel 10L, a portion 47 of pixel separation region 4 is provided, and transmission transistors TRL1 and TRL2 are provided around portion 47 with the portion 47 as the center along the Y direction of arrow. Similarly, in pixel 10R, a portion 47 of pixel separation region 4 is provided, and transmission transistors TRL1 and TRL2 are provided around portion 47 with the portion 47 as the center along the Y direction of arrow. The n-type semiconductor region 54 serves as another main electrode for the transmission transistors TRL1, TRL2, TRR1, and TRR2.

[0215] Meanwhile, in pixel 10L, p-type well contact areas 6 are provided at the upper left and lower left corners, which are surrounded by pixel separation areas 4. The p-type well contact areas 6 are electrically connected to the p-type well areas 302. In pixel 10R, P-type well contact areas 6 are provided at the upper right corner and lower right corner, which are surrounded by pixel separation area 4. P-type well contact areas 6 are electrically connected to P-type well area 302.

[0216] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the twenty-first embodiment. [Functions and Effects]

[0217] In the light detection device 1 according to the twenty-second embodiment, similar functions and effects as those achieved by the light detection device 1 according to the twenty-first embodiment can be achieved.

[0218] In addition, such as Figure 37 As shown, in the light detection device 1, the pixel separation region 4 between pixels 10L and 10R of pixel 10 has a cutoff portion 41, and another main electrode of the transmission transistor TRL1, etc., is disposed in the cutoff portion 41. Therefore, similar functions and effects to those achieved by the light detection device 1 according to the first embodiment can be achieved. <23. Twenty-third Embodiment>

[0219] use Figure 38 The light detection device 1 according to the twenty-third embodiment of this disclosure is described. The twenty-third embodiment illustrates a variation of the planar structure and vertical cross-sectional construction of the pixel 10 in the light detection device 1 according to the twenty-second embodiment. [The structure of pixel 10 in light detection device 1]

[0220] Figure 38 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 38 As shown, the light detection device 1 according to the twenty-third embodiment includes a cut-off portion 42 in the light detection device 1 according to the twenty-second embodiment.

[0221] A cut-off portion 42 is provided at each of the four corners of the pixel separation region 4 surrounding pixel 10. The cut-off portion 42 is provided with a p-type well contact region 6, and the p-type well contact region 6 is electrically connected to the p-type well region 302.

[0222] Other components besides those described above are the same as or substantially the same as the components of the light detection device 1 according to the twenty-second embodiment. [Functions and Effects]

[0223] In the light detection device 1 according to the twenty-third embodiment, similar functions and effects as those achieved by the light detection device 1 according to the twenty-second embodiment can be achieved. <24. Twenty-fourth Embodiment>

[0224] use Figure 39 The light detection device 1 according to the twenty-fourth embodiment of this disclosure is described. The twenty-fourth embodiment illustrates a variation of the planar structure of the pixel 10 and pixel circuit 20 in the light detection device 1 according to the first embodiment. [The structure of pixel 10 in light detection device 1]

[0225] Figure 39 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 39 As shown, the photodetector 1 according to the twenty-fourth embodiment has a two-layer stacked structure, wherein the first substrate 1A and the second substrate 1B are combined to form one substrate of the photodetector 1 according to the first embodiment (see [link]). Figure 4 ).

[0226] This will be explained in detail. Within the region surrounded by pixel separation region 4, pixel 10L of pixel 10 includes a photoelectric conversion element PDL and a transmission transistor TRL. In the same region surrounded by pixel separation region 4, transistor Tr1 is also provided. Transistor Tr1 includes a gate insulating film (not shown), a gate electrode 56, and a pair of main electrodes 57. The gate electrode 56 is disposed on the second surface 30B of the p-type well region 302 through the gate insulating film (see [link to documentation]). Figure 3 A pair of main electrodes 57 are disposed in the p-type well region and formed thereusing an n-type semiconductor region.

[0227] Transistor Tr1 is formed as a reset transistor RST, amplifying transistor AMP, or select transistor SEL in pixel circuit 20 and is included in pixel circuit 20.

[0228] Within the region surrounded by pixel separation region 4, pixel 10R of pixel 10 includes a photoelectric conversion element PDR and a transmission transistor TRR. In the same region surrounded by pixel separation region 4, transistor Tr2 is also disposed. Like transistor Tr1, transistor Tr2 includes a gate insulating film (not shown), a gate electrode 56, and a pair of main electrodes 57.

[0229] Transistor Tr2 is formed as a reset transistor RST, amplifying transistor AMP, or select transistor SEL in pixel circuit 20 and is included in pixel circuit 20.

[0230] The components other than those described above are the same as or substantially the same as the components of the light detection device 1 according to the first embodiment. [Functions and Effects]

[0231] In the light detection device 1 according to the twenty-fourth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the first embodiment can be achieved. <25. Fifteenth Embodiment>

[0232] use Figure 40 The light detection apparatus 1 according to the twenty-fifth embodiment of this disclosure is described. The twenty-fifth embodiment illustrates a variation of the planar structure of the pixel 10 and pixel circuit 20 in the light detection device 1 according to the fourteenth embodiment. [The structure of pixel 10 in light detection device 1]

[0233] Figure 40 An example of the specific planar structure of the pixel 10 of the light detection device 1 is shown. like Figure 40 As shown, the photodetector 1 according to the twenty-fourth embodiment has a two-layer stacked structure, wherein the first substrate 1A and the second substrate 1B are combined to form one substrate of the photodetector 1 according to the fourteenth embodiment. In other words, the photodetector 1 according to the twenty-fourth embodiment is composed of the photodetector 1 according to the fourteenth embodiment and the photodetector 1 according to the twenty-fourth embodiment.

[0234] This will be explained in detail. Within the area surrounded by the pixel separation region 4, pixel 10L of pixel 10 includes a photoelectric conversion element PDL and a transmission transistor TRL, and also includes a transistor Tr1. Within the region surrounded by pixel separation region 4, pixel 10R of pixel 10 includes photoelectric conversion element PDR and transmission transistor TRR, and also includes transistor Tr2.

[0235] Transistors Tr1 and Tr2 respectively constitute the reset transistor RST, amplification transistor AMP, or selection transistor SEL of pixel circuit 20, and are included in pixel circuit 20.

[0236] The components other than those described above are the same as or substantially the same as the components of the optical detection device 1 according to the fourteenth embodiment or the optical detection device 1 according to the twenty-fourth embodiment. [Functions and Effects]

[0237] In the light detection device 1 according to the twenty-fourth embodiment, similar functions and effects as those achieved by the light detection device 1 according to the fourteenth embodiment and those achieved by the light detection device 1 according to the twenty-fourth embodiment can be realized. <26. Other embodiments>

[0238] This technology is not limited to the above embodiments and can be modified in various ways without departing from the scope of this technology.

[0239] For example, in the light detection apparatus according to the first to twenty-fifth embodiments described above, the light detection apparatuses according to two or more embodiments can be combined together.

[0240] The light detection apparatus according to the first aspect of this disclosure includes a first pixel, a pixel separation region, and a first transmission transistor. A first pixel has a first photoelectric conversion element for converting light into electrical charge disposed on a first surface side of the substrate. A pixel separation region extends around the side of the first pixel and optically and electrically separates the first pixel from its surroundings. A first transmission transistor is disposed on the first pixel overlapping a second surface side of the substrate opposite to the first surface; the first main electrode, which is one of a pair of main electrodes of the first transmission transistor, is electrically connected to the first photoelectric conversion element. Furthermore, in the light detection device, a second main electrode is provided in a cut-off portion formed by a portion of the pixel separation region being cut off in the extension direction at least on the second surface side of the substrate. The second main electrode is the other of a pair of main electrodes of the first transmission transistor. According to the optical detection device constructed in this way, another main electrode can be disposed overlappingly on the pixel separation region in the extending direction; therefore, the ratio of the area occupied by the first transmission transistor disposed in the first pixel to the area occupied by the first pixel can be reduced.

[0241] The optical detection apparatus according to the second aspect of this disclosure further includes a first well region and a first well contact region in the optical detection apparatus according to the first aspect of this disclosure. A first well region has a first transmission transistor disposed on the second surface side of the substrate. A first well contact region is disposed in another truncated portion formed because another portion of the pixel separation region in the extension direction is truncated on at least the second surface side of the substrate. The first well contact region has the same conductivity type as the first well region and is electrically connected to the first well region. According to the light detection device constructed in this way, the first well contact region can be disposed overlappingly on the pixel separation region in the extending direction; therefore, the ratio of the area occupied by the first well contact region disposed in the first pixel to the area occupied by the first pixel can be reduced.

[0242] The light detection apparatus according to the third aspect of this disclosure includes a second pixel, a pixel separation region, and a second transmission transistor in the light detection apparatus according to the second aspect of this disclosure. The second pixel is adjacent to the first pixel on the first surface side of the substrate and is provided with a second photoelectric conversion element for converting light into electrical charge. A pixel separation region extends around the side of the second pixel and optically and electrically separates the second pixel from its surroundings. A second transmission transistor is disposed overlapping the second pixel on the second surface side of the substrate, and a third main electrode, which is one of a pair of main electrodes of the second transmission transistor, is electrically connected to the second photoelectric conversion element. Furthermore, in the photodetector, a fourth main electrode is provided in a cut-off portion formed by a portion of the pixel separation region being cut off in the extension direction at least on the second surface side of the substrate. The fourth main electrode is the other of a pair of main electrodes of the second transmission transistor. According to the light detection device constructed in this way, another main electrode can be disposed overlappingly on the pixel separation region in the extending direction; therefore, the ratio of the area occupied by the second transmission transistor disposed in the second pixel to the area occupied by the second pixel can be reduced.

[0243] The optical detection apparatus according to the fourth aspect of the present invention further includes a second well region and a second well contact region in the optical detection apparatus according to the third aspect. The second well region has a second transmission transistor disposed on the second surface side of the substrate. The second well contact region is disposed in another cut-off portion formed because another portion of the pixel separation region in the extension direction is cut off at least on the second surface side of the substrate. The second well contact region has the same conductivity type as the second well region and is electrically connected to the second well region. According to the light detection device constructed in this way, the second well contact region can be disposed overlappingly on the pixel separation region in the extending direction; therefore, the ratio of the area occupied by the second well contact region disposed in the second pixel to the area occupied by the second pixel can be reduced.

[0244] In the light detection apparatus according to the fifth aspect of this disclosure, the first pixel and the second pixel can constitute the phase difference detection pixel in the light detection apparatus according to the fourth aspect of this disclosure. The optical detection device constructed in this manner can expand the dynamic range of optical detection. Furthermore, the optical detection device can reduce background noise related to the electric field and improve the signal-to-noise ratio during low-light imaging. Additionally, the optical detection device can reduce anisotropic optical mixing and lower fixed-pattern noise in bright images.

[0245] In the light detection apparatus according to the sixth aspect of this disclosure, an overflow path region is provided in the light detection apparatus according to the fifth aspect. The overflow path region is provided in another truncated portion formed by the truncation of another portion of the pixel separation region provided between the first pixel and the second pixel in the extending direction. The overflow path region allows excess charge to flow from one of the first photoelectric conversion element and the second photoelectric conversion element to the other. Based on the optical detection device constructed in this way, the transmission potential can be easily generated. <Construction of this technology>

[0246] The prior art has the following structure. According to the present technology with the following structure, the ratio of the area occupied by the transmission transistor disposed within the pixel to the area occupied by the pixel can be reduced.

[0247] (1) A light detection device, comprising: The first pixel has a first photoelectric conversion element for converting light into charge disposed on the first surface side of the substrate; A pixel separation region extends around the side of the first pixel, the pixel separation region optically and electrically separating the first pixel from its surroundings; A first transmission transistor is disposed on the first pixel, overlapping a second surface on the substrate opposite to the first surface. A first main electrode is electrically connected to the first photoelectric conversion element, and the first main electrode is one of a pair of main electrodes of the first transmission transistor. A second main electrode is provided in a cut-off portion formed by truncating a portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The second main electrode is the other of the pair of main electrodes of the first transmission transistor. (2) The optical detection device according to (1), wherein, The signal wiring forming the floating diffuser is electrically connected to the other main electrode. (3) The optical detection device according to (1) or (2) further includes: A first well region, wherein the first transmission transistor is disposed on the second surface side of the substrate; and A first well contact region is disposed in another cut-off portion formed by the truncating of another portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The first well contact region has the same conductivity as the first well region and is electrically connected to the first well region. (4) The optical detection device according to (3), wherein, The power supply wiring that supplies power to the first well region is electrically connected to the contact region of the first well. (5) The light detection device according to any one of (1) to (4), further comprising: The second pixel is adjacent to the first pixel on the first surface side of the substrate, and the second pixel is provided with a second photoelectric conversion element for converting light into charge; The pixel separation region extends around the side of the second pixel, and the pixel separation region optically and electrically separates the second pixel from its surroundings; and The second transmission transistor is disposed overlappingly on the second pixel on the second surface side of the substrate, and the third main electrode is electrically connected to the second photoelectric conversion element. The third main electrode is one of a pair of main electrodes of the second transmission transistor. A fourth main electrode is provided in a cut-off portion formed by truncating a portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The fourth main electrode is the other of the pair of main electrodes of the second transmission transistor. (6) The optical detection device according to (5) further includes: A second well region, wherein a second transmission transistor is disposed on the second surface side of the substrate; and A second well contact region is disposed in another cut-off portion formed by the truncating of another portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The second well contact region has the same conductivity as the second well region and is electrically connected to the second well region. (7) The optical detection device according to (6) or (7), wherein, The first pixel and the second pixel are configured to form a phase difference detection pixel. (8) The optical detection device according to (7), wherein An overflow path region is provided in another truncated portion formed by the truncation of another portion of the pixel separation region between the first pixel and the second pixel in the extension direction. The overflow path region allows excess charge to flow from one of the first photoelectric conversion element and the second photoelectric conversion element to the other. (9) The light detection apparatus according to any one of (5) to (8), wherein, When viewed from the direction of light incidence, the second pixel is formed into a shape that has optical symmetry with the first pixel. (10) The light detection apparatus according to any one of (5) to (9), wherein, The pixel separation region is provided between the second main electrode and the fourth main electrode, and the second main electrode and the fourth main electrode are electrically separated. (11) The light detection apparatus according to any one of (5) to (9), wherein, The second main electrode and the fourth main electrode are integrally formed and shared, and no pixel separation region is inserted between the second main electrode and the fourth main electrode. (12) The light detection apparatus according to any one of (5) to (11), wherein, Both the second main electrode and the fourth main electrode are semiconductor regions of the first conductivity type, and The first well region, the first well contact region, the second well region, and the second well contact region are all semiconductor regions of a second conductivity type, which is opposite to the first conductivity type. (13) The optical detection device according to (9), wherein, When viewed from the direction of light incidence, the planar shapes of the first pixel and the second pixel form a rectangle. The contact area between the second main electrode and the first well is located on the diagonal of the first pixel, and The contact area between the fourth main electrode and the second well is located on the diagonal of the second pixel. (14) The optical detection device according to (9), wherein, When viewed from the direction of light incidence, the planar shapes of the first pixel and the second pixel form a rectangle, and The second main electrode, the first well contact area, the fourth main electrode, and the second well contact area are arranged along the extending direction of the pixel separation area disposed between the first pixel and the second pixel. (15) The optical detection device according to (9), wherein, The second main electrode and the fourth main electrode are disposed at one end of the pixel separation region located between the first pixel and the second pixel in the extending direction, and The first well contact region and the second well contact region are disposed on the other end side of the pixel separation region in the extension direction. (16) The light detection apparatus according to any one of (5) to (15), further comprising: A first pixel separation region, which is L-shaped when viewed from the incident direction of light, includes a pixel separation region extending along a first direction and a pixel separation region extending along a second direction intersecting the first direction, wherein the first pixel and the second pixel are arranged in the first direction when viewed from the incident direction of light; and The second pixel separation region, which is I-shaped when viewed from the incident direction of light, includes a pixel separation region extending along the first direction. Wherein, both the first pixel and the second pixel are surrounded by the pixel separation region formed by the combination of the first pixel separation region and the second pixel separation region. (17) The light detection apparatus according to any one of (5) to (16), wherein, An optical lens is disposed on the first surface side of the substrate on the first pixel and the second pixel, and When viewed from the direction of light incidence, one or more of the second main electrode, the fourth main electrode, the first well contact region, and the second well contact region are disposed on the periphery of the optical lens. (18) The light detection apparatus according to any one of (5) to (17), wherein, Multiple first transmission transistors are configured with parallel ground connections, and Multiple second transmission transistors are configured with parallel ground connections. (19) The light detection apparatus according to any one of (5) to (18), wherein, In the first pixel, excluding the area of ​​the first transmission transistor, a first dark current prevention layer is provided on the second surface side of the substrate, and a first charge storage layer is provided between the first photoelectric conversion element and the first dark current prevention layer. In the second pixel, in addition to the area of ​​the second transmission transistor, a second dark current prevention layer is provided on the second surface side of the substrate, and a second charge storage layer is provided between the second photoelectric conversion element and the second dark current prevention layer. (20) The light detection apparatus according to any one of (1) to (18), wherein, The pixel separation region includes a separation groove extending in the thickness direction of the substrate and an embedded body embedded in the separation groove.

[0248] This application claims priority to Japanese priority patent application JP2023-217237, filed with the Japan Patent Office on December 22, 2023, the entire contents of which are incorporated herein by reference.

[0249] Those skilled in the art will understand that various modifications, combinations, sub-combinations and alterations can be made according to design requirements and other factors, as long as they are within the scope of the appended claims or their equivalents.

Claims

1. A light detection device, comprising: The first pixel has a first photoelectric conversion element for converting light into charge disposed on the first surface side of the substrate; A pixel separation region extends around the side of the first pixel, the pixel separation region optically and electrically separating the first pixel from its surroundings; A first transmission transistor is disposed on the first pixel, overlapping a second surface on the substrate opposite to the first surface. A first main electrode is electrically connected to the first photoelectric conversion element, and the first main electrode is one of a pair of main electrodes of the first transmission transistor. A second main electrode is provided in a cut-off portion formed by truncating a portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The second main electrode is the other of the pair of main electrodes of the first transmission transistor.

2. The optical detection device according to claim 1, wherein, The signal wiring forming the floating diffuser is electrically connected to the other main electrode.

3. The optical detection device according to claim 1, further comprising: A first well region is provided with the first transmission transistor on the second surface side of the substrate; as well as A first well contact region is disposed in another cut-off portion formed by the truncating of another portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The first well contact region has the same conductivity as the first well region and is electrically connected to the first well region.

4. The optical detection device according to claim 3, wherein, The power supply wiring that supplies power to the first well region is electrically connected to the contact region of the first well.

5. The optical detection device according to claim 1, further comprising: The second pixel is adjacent to the first pixel on the first surface side of the substrate, and the second pixel is provided with a second photoelectric conversion element for converting light into charge; The pixel separation region extends around the side of the second pixel, and the pixel separation region separates the second pixel from its surroundings in an optical and electrical manner. as well as The second transmission transistor is disposed overlappingly on the second pixel on the second surface side of the substrate, and the third main electrode is electrically connected to the second photoelectric conversion element. The third main electrode is one of a pair of main electrodes of the second transmission transistor. A fourth main electrode is provided in a cut-off portion formed by truncating a portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The fourth main electrode is the other of the pair of main electrodes of the second transmission transistor.

6. The optical detection device according to claim 5, further comprising: A second well region is provided with a second transmission transistor on the second surface side of the substrate; as well as A second well contact region is disposed in another cut-off portion formed by the truncating of another portion of the pixel separation region in the extension direction on at least the second surface side of the substrate. The second well contact region has the same conductivity as the second well region and is electrically connected to the second well region.

7. The optical detection device according to claim 5, wherein, The first pixel and the second pixel are configured to form a phase difference detection pixel.

8. The optical detection device according to claim 7, wherein, An overflow path region is provided in another truncated portion formed by the truncation of another portion of the pixel separation region between the first pixel and the second pixel in the extension direction. The overflow path region allows excess charge to flow from one of the first photoelectric conversion element and the second photoelectric conversion element to the other.

9. The optical detection device according to claim 5, wherein, When viewed from the direction of light incidence, the second pixel is formed into a shape that has optical symmetry with the first pixel.

10. The optical detection device according to claim 5, wherein, The pixel separation region is provided between the second main electrode and the fourth main electrode, and the second main electrode and the fourth main electrode are electrically separated.

11. The optical detection device according to claim 5, wherein, The second main electrode and the fourth main electrode are integrally formed and shared, and no pixel separation region is inserted between the second main electrode and the fourth main electrode.

12. The optical detection device according to claim 5, wherein, Both the second main electrode and the fourth main electrode are semiconductor regions of the first conductivity type, and The first well region, the first well contact region, the second well region, and the second well contact region are all semiconductor regions of a second conductivity type, which is opposite to the first conductivity type.

13. The optical detection device according to claim 9, wherein, When viewed from the direction of light incidence, the planar shapes of the first pixel and the second pixel form a rectangle. The contact area between the second main electrode and the first well is located on the diagonal of the first pixel, and The contact area between the fourth main electrode and the second well is located on the diagonal of the second pixel.

14. The optical detection device according to claim 9, wherein, When viewed from the direction of light incidence, the planar shapes of the first pixel and the second pixel form a rectangle, and The second main electrode, the first well contact area, the fourth main electrode, and the second well contact area are arranged along the extending direction of the pixel separation area disposed between the first pixel and the second pixel.

15. The optical detection device according to claim 9, wherein, The second main electrode and the fourth main electrode are disposed at one end of the pixel separation region located between the first pixel and the second pixel in the extending direction, and The first well contact region and the second well contact region are disposed on the other end side of the pixel separation region in the extension direction.

16. The optical detection device according to claim 5, further comprising: The first pixel separation region is L-shaped when viewed from the incident direction of light and includes a pixel separation region extending along a first direction and a pixel separation region extending along a second direction intersecting the first direction, wherein the first pixel and the second pixel are arranged in the first direction when viewed from the incident direction of light. as well as The second pixel separation region, which is I-shaped when viewed from the incident direction of light, includes a pixel separation region extending along the first direction. Wherein, both the first pixel and the second pixel are surrounded by the pixel separation region formed by the combination of the first pixel separation region and the second pixel separation region.

17. The optical detection device according to claim 5, wherein, An optical lens is disposed on the first surface side of the substrate on the first pixel and the second pixel, and When viewed from the direction of light incidence, one or more of the second main electrode, the fourth main electrode, the first well contact region, and the second well contact region are disposed on the periphery of the optical lens.

18. The optical detection device according to claim 5, wherein, Multiple first transmission transistors are configured with parallel ground connections, and Multiple second transmission transistors are provided with parallel ground connections.

19. The optical detection device according to claim 5, wherein, In the first pixel, excluding the area of ​​the first transmission transistor, a first dark current prevention layer is provided on the second surface side of the substrate, and a first charge storage layer is provided between the first photoelectric conversion element and the first dark current prevention layer. In the second pixel, in addition to the area of ​​the second transmission transistor, a second dark current prevention layer is provided on the second surface side of the substrate, and a second charge storage layer is provided between the second photoelectric conversion element and the second dark current prevention layer.

20. The optical detection device according to claim 1, wherein, The pixel separation region includes a separation groove extending in the thickness direction of the substrate and an embedded body embedded in the separation groove.

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