Ultraviolet dot array detector and power equipment discharge detection system

Abstract

The embodiment of the application discloses a kind of ultraviolet dot array detector and power equipment discharge detection system, including filter layer, active layer, charge separation layer, two-dimensional material modification layer and interdigital electrode.Filter layer is used to filter mixed light to obtain solar blind ultraviolet light.The material of active layer is β-Ga2O3, for converting solar blind ultraviolet photon into randomly distributed electron-hole pair.Charge separation layer is used to convert randomly distributed electron-hole pair into directional drift electron and hole.Two-dimensional material modification layer is used to transport the electron that drifts through electrode interface.Interdigital electrode is used to convert the electron that passes through electrode interface into electrical signal and then output.The embodiment of the application carries out hard filtering by filter layer to eliminate the interference of ambient light.Based on the physical characteristics of active layer material, most of the background light interference is eliminated from the nature of the material.Therefore, by different dimensions, the interference of ambient light on discharge detection is removed, and the detection effect is improved.

Description

Technical Field

[0001] This application relates to the field of power equipment, and includes, but is not limited to, an ultraviolet array detector and a power equipment discharge detection system. Background Technology

[0002] Power equipment (such as GIS, switchgear, transformers, etc.) is prone to partial discharge (PD) or arcing during long-term operation due to insulation deterioration, poor contact, and foreign object intrusion. If not detected and addressed in time, these can develop into serious insulation faults, leading to equipment damage or even power outages. Therefore, early, sensitive, and accurate online monitoring of internal discharges in power equipment is crucial. Most related technologies employ ultraviolet imaging for discharge detection; however, current discharge detection methods are sensitive to the ultraviolet components (UVA, UVB) in sunlight, suffer from strong background light interference during daytime outdoor use, have low signal-to-noise ratios, and limited sensitivity, making them insufficient for detecting weak discharges. Furthermore, the detection equipment is bulky and costly, making embedded and distributed deployment within the equipment difficult. Summary of the Invention

[0003] In view of this, the ultraviolet array detector and power equipment discharge detection system provided in the embodiments of this application are implemented as follows: One aspect of this application provides an ultraviolet array detector, which includes: It includes a filter layer, an active layer, a charge separation layer, a two-dimensional material modification layer, and interdigitated electrodes; The filter layer is used to filter mixed light to obtain solar-blind ultraviolet light; The active layer is made of β-Ga2O3 and is used to convert solar-blind ultraviolet photons into randomly distributed electron-hole pairs; The charge separation layer is used to convert randomly distributed electron-hole pairs into directionally drifting electrons and holes; Two-dimensional material modification layers are used to transport drifting electrons across the electrode interface; Interdigitated electrodes are used to convert electrons passing through the electrode interface into electrical signals for output.

[0004] In one possible implementation, a substrate and a packaging layer are also included; The substrate is a high thermal conductivity insulating semiconductor, used to support the overall structure of the ultraviolet array detector; The encapsulation layer is used to protect the internal components of the ultraviolet array detector.

[0005] One possible implementation also includes a buffer layer; The buffer layer is a wide-bandgap semiconductor thin film used to suppress oxidation on the substrate surface.

[0006] In one possible implementation, the layers in the ultraviolet array detector are arranged from bottom right to top as follows: substrate, buffer layer, active layer, interdigitated electrode, charge separation layer, two-dimensional material modification layer, filter layer, and encapsulation layer.

[0007] In one possible implementation, the active layer is formed by magnetron sputtering using a Ga2O3 ceramic target on a buffer layer or substrate.

[0008] In one possible implementation, the interdigitated electrodes are formed by photolithography and electron beam evaporation on the surface of the active layer.

[0009] In one possible implementation, the charge separation layer is achieved through the β of the interdigitated electrodes. A mixed solution of PCDTBT dissolved in chlorobenzene solution is formed by spin-coating PCDTBT onto the surface of Ga2O3.

[0010] In one possible implementation, the two-dimensional material modification layer is formed on the charge separation layer by means of transfer or direct growth.

[0011] In one possible implementation, the filter layer includes a solar-blind ultraviolet bandpass filter with an array size matching, which is attached to the upper surface of the encapsulation layer by optical adhesive.

[0012] Another aspect of this application provides a power equipment discharge detection system, the system comprising: The system includes a detector array, a signal acquisition and processing unit, and a monitoring center; The detector array includes at least one of the aforementioned ultraviolet array detectors, used to detect the optical signal of the target power equipment and convert it into an electrical signal for output; The signal acquisition and processing unit is used to determine the discharge detection result of the target power equipment based on the electrical signal. The monitoring center is used to display the discharge detection results of the target power equipment.

[0013] In this embodiment, the ultraviolet array detector includes a filter layer, an active layer, a charge separation layer, a two-dimensional material modification layer, and interdigitated electrodes. The filter layer filters mixed light to obtain solar-blind ultraviolet light. The active layer is made of β-Ga2O3 and is used to convert solar-blind ultraviolet photons into randomly distributed electron-hole pairs. The charge separation layer is used to convert randomly distributed electron-hole pairs into directionally drifting electrons and holes. The two-dimensional material modification layer is used to transport drifting electrons through the electrode interface. The interdigitated electrodes are used to convert the electrons passing through the electrode interface into electrical signals for output. This embodiment uses the filter layer to perform hard filtering to remove ambient light interference. Based on the physical properties of the active layer material, most background light interference is eliminated from the material itself. Thus, by removing the interference of ambient light on discharge detection from different dimensions, the detection effect is improved. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This diagram illustrates the structure of an ultraviolet array detector according to an embodiment of this application. Figure 2 A schematic diagram of the dot array layout of an ultraviolet dot array detector according to an embodiment of this application is shown; Figure 3 This diagram illustrates a discharge detection system for power equipment according to an embodiment of this application. Figure 4 This diagram illustrates an application scenario of a power equipment discharge detection system according to an embodiment of this application. Detailed Implementation

[0016] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the specific technical solutions of this application will be further described in detail below with reference to the accompanying drawings of the embodiments of this application. The following embodiments are used to illustrate this application, but are not intended to limit the scope of this application.

[0017] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein is for the purpose of describing embodiments of this application only and is not intended to limit this application.

[0018] In the following description, references are made to “some embodiments,” which describe a subset of all possible embodiments. However, it is understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0019] It should be noted that the terms "first, second, third" used in the embodiments of this application are used to distinguish similar or different objects and do not represent a specific order of objects. It can be understood that "first, second, third" can be interchanged in a specific order or sequence where permitted, so that the embodiments of this application described herein can be implemented in an order other than that illustrated or described herein.

[0020] The ultraviolet array detector in this application embodiment is used to detect discharge in power equipment. This discharge detection process can be implemented by a power equipment discharge detection system that uses an ultraviolet array detector as a detection device.

[0021] Optionally, the power equipment discharge detection system of this application embodiment can be controlled by any electronic device to execute the corresponding power equipment discharge detection process. This electronic device may include, but is not limited to, mobile phones, wearable devices (such as smartwatches, smart bracelets, smart glasses, etc.), tablet computers, laptops, vehicle terminals, PCs (Personal Computers), etc. The functions implemented by this method can be achieved by the processor in the electronic device calling program code. Of course, the program code can be stored in a computer storage medium. Therefore, the electronic device includes at least a processor and a storage medium.

[0022] The ultraviolet array detector of this application embodiment can be used in any application scenario that requires discharge detection of power equipment. For example, this application embodiment can be applied to application scenarios of discharge detection in switchgear busbar rooms or cable rooms within a power system. Alternatively, it can also be applied to application scenarios of discharge detection in the observation windows / vents of all switchgear, main transformers, reactors, and instrument transformers within a station under distributed network monitoring.

[0023] Currently, power equipment discharge detection methods are mainly divided into two categories: electrical methods and non-electrical methods. Electrical methods include pulsed current methods, ultra-high frequency methods, and transient ground voltage methods. These methods are susceptible to electromagnetic interference in the field and make it difficult to directly locate the discharge point spatially. Non-electrical methods include ultrasonic detection, infrared thermal imaging, and ultraviolet imaging detection. Ultrasonic detection is sensitive to mechanical defects, but its propagation attenuation is large, limiting its sensitivity to electrical discharges and making precise location difficult. Infrared thermal imaging, based on temperature anomaly detection, has a slow response and cannot detect initial discharges. Ultraviolet imaging detection images the discharge by detecting ultraviolet photons generated during the discharge, offering advantages such as intuitiveness and localization, and is currently a research hotspot.

[0024] However, traditional ultraviolet imagers mostly use photomultiplier tubes (PMTs) or silicon-based ultraviolet detectors, which are sensitive to the ultraviolet components (UVA and UVB) in sunlight, suffer from strong background light interference when used outdoors during the day, and have a low signal-to-noise ratio. They also have limited sensitivity, insufficient ability to detect weak discharges, and are relatively large and expensive, making it difficult to achieve embedded or distributed deployment.

[0025] Therefore, the technical problem solved by the embodiments of this application is how to optimize the ultraviolet imaging detection method for discharge detection of power equipment, improve the accuracy and applicability of discharge detection results.

[0026] The following describes in detail, with reference to the accompanying drawings, an ultraviolet array detector and a power equipment discharge detection system including an ultraviolet array detector, according to embodiments of this application.

[0027] Figure 1 A schematic diagram of the structure of an ultraviolet array detector according to an embodiment of this application is shown. Figure 1 As shown, the ultraviolet (UV) array detector in this embodiment may include a filter layer, an active layer, a charge separation layer, a two-dimensional material modification layer, and interdigitated electrodes. The UV array detector is arranged in an array of M×N pixels, with each pixel converting the detected solar-blind UV light into a corresponding current, resulting in an electrical signal comprising M×N currents. Based on the functions of different layers in the UV array detector, each layer may contain M×N pixels, or it may not be distributed in a pixel array format.

[0028] In some embodiments, a filter layer is used to filter mixed light to obtain solar-blind ultraviolet light. The filter layer may include a filter with a center wavelength of 255 nm ± 5 nm and a half-width at half-maximum (WHM) of < 20 nm to filter out non-solar-blind ultraviolet light (UVA, UVB) and visible light, ensuring that only solar-blind ultraviolet light generated by discharge is detected. The active layer is made of β-Ga2O3 and is used to convert solar-blind ultraviolet photons into randomly distributed electron-hole pairs. It can be a (100) oriented polycrystalline thin film with a thickness of 50-200 nm. A charge separation layer (PCDTBT) is used to convert randomly distributed electron-hole pairs into directional drifting electrons and holes. When this layer is formed on the β-Ga2O3 active layer by solution spin coating, it constitutes a pn heterojunction with a thickness of 20-50 nm, used to reduce device dark current, regulate threshold voltage, and participate in the formation of built-in electric field. A two-dimensional material modification layer is used to transport drifting electrons across the electrode interface. This layer can be a single or multiple layer of MoS2, partially or completely covering the PCDTBT / β-Ga2O3 heterojunction region through transfer or direct growth methods. This layer is used to modify the electrode / semiconductor contact interface, lower the Schottky barrier, passivate grain boundaries, and provide high-mobility carrier transport channels. Interdigitated electrodes are used to convert electrons passing through the electrode interface into electrical signals for output. These may include a bottom coplanar or interdigitated electrode (forming an ohmic contact with the β-Ga2O3 layer, made of Al or Ti / Au material), and a top transparent electrode (such as ITO) as needed.

[0029] Optionally, the ultraviolet dot matrix detector in this embodiment further includes a substrate and an encapsulation layer for integrating the above-mentioned functional layers into the ultraviolet dot matrix detector. The substrate is a high thermal conductivity insulating semiconductor used to support the overall structure of the ultraviolet dot matrix detector. The encapsulation layer is used to protect the internal components of the ultraviolet dot matrix detector. Further, the ultraviolet dot matrix detector may also include a buffer layer, which is a wide bandgap semiconductor thin film used to suppress oxidation on the substrate surface.

[0030] In some embodiments, the layers in the ultraviolet array detector are arranged from bottom right to top as follows: substrate, buffer layer, active layer, interdigitated electrodes, charge separation layer, two-dimensional material modification layer, filter layer, and encapsulation layer. The substrate serves as the foundation of the entire detector and is a single, integrated structure. The buffer layer suppresses oxidation on the substrate surface and can completely cover the substrate. The active layer is used to photoelectrically convert solar-blind ultraviolet photons into multiple charge carriers (electron-hole pairs), and is therefore distributed in an array, with each pixel responsible for converting the corresponding charge carrier. The interdigitated electrodes convert multiple currents to obtain the final electrical signal and are also distributed in an array, with each pixel responsible for converting one current path. The charge separation layer converts electron-hole pairs from different pixels in the active layer into directionally drifting electrons and holes, and is also arranged in an array. The distribution consists of several layers, each pixel converting its corresponding electron-hole pair into directional drifting electrons and holes. A two-dimensional material modification layer transports the drifting electrons from different pixels in the charge separation layer through the electrode interface; therefore, it is also distributed in an array, with each pixel transporting its corresponding drifting electron through the electrode interface. A filter layer filters the light entering the ultraviolet array detector; this can be a single filter covering the entire light-collecting surface of the ultraviolet array detector or multiple spliced ​​filters. An encapsulation layer encapsulates all layers of the ultraviolet array detector into a single structure; therefore, it is also a single, integrated structure.

[0031] In other words, based on the functional characteristics of each layer, the active layer, interdigitated electrodes, charge separation layer and two-dimensional material modification layer are arranged in an M×N array, which can be used to convert the acquired optical signal into an electrical signal including M×N currents.

[0032] Figure 2 This diagram illustrates a dot matrix layout of an ultraviolet dot matrix detector according to an embodiment of this application. Figure 2 As shown, an ultraviolet array detector can include a detection array formed by M×N pixels (taking 4×4 as an example in the figure). Each pixel is used to detect one current path, resulting in an electrical signal output including M×N current paths. Each pixel independently leads out an electrode, forming M×N signal lines. The electrode layout adopts a coplanar interdigitated structure, but the electrodes of each pixel are electrically isolated. The electrical signal including M×N current paths obtained by this array detector can be selected and read in row / column order using a multiplexer.

[0033] In some embodiments, the active layer of the ultraviolet array detector in this application is formed by magnetron sputtering using a Ga2O3 ceramic target on a buffer layer or substrate. The interdigitated electrodes are formed by photolithography and electron beam evaporation on the surface of the active layer. The charge separation layer is formed by the β-type of the interdigitated electrodes. A mixture of PCDTBT dissolved in chlorobenzene solution is spin-coated onto the Ga2O3 surface. A two-dimensional material modification layer is formed on the charge separation layer via transfer or direct growth. The filter layer includes a solar-blind ultraviolet bandpass filter with array size matching, which is bonded to the upper surface of the encapsulation layer using optical adhesive.

[0034] For example, the fabrication process of an ultraviolet array detector may include: first selecting a 2-inch 4H... A SiC (0001) substrate was cleaned using a standard cleaning process to obtain the prepared substrate. A single-crystal AlN film approximately 20 nm thick was then grown on the SiC substrate using metal-organic chemical vapor deposition (MOCVD) to deposit a buffer layer. The substrate with the AlN buffer layer was then placed in a magnetron sputtering chamber. Using a Ga2O3 ceramic target, under an argon atmosphere, the sputtering power was controlled at 140 W, the substrate temperature at 500 °C, the deposition pressure at 0.6 Pa, and the deposition time at 60 minutes, resulting in a polycrystalline β-type substrate approximately 150 nm thick with a (100) preferred orientation. The Ga2O3 thin film forms an active layer, and this process, followed by annealing in air at 800 °C for 1 hour, improves crystallinity. The active layer is then formed in the β-layer using photolithography and electron beam evaporation processes. Al (100 nm) interdigitated electrodes were defined and fabricated on a Ga2O3 thin film, with a finger width of 10 μm and a finger spacing of 20 μm, forming 64 independent detection unit regions (in the case of a UV array detector comprising 64 pixels). PCDTBT was dissolved in a chlorobenzene solution (concentration 5 mg / mL), and β-type detectors were fabricated in the interdigitated electrode regions. Ga2O3 was spin-coated at 3000 rpm for 30 seconds. It was then annealed on a hot plate at 120 °C for 30 minutes to form a uniform film approximately 30 nm thick, resulting in a charge separation layer. Using polydimethylsiloxane (PDMS) dry transfer technology, a monolayer MoS2 sheet grown by chemical vapor deposition (CVD) was transferred to the PCDTBT surface of some pixels, covering the electrodes and part of the channel region to obtain a two-dimensional material modification layer. Finally, a solar-blind ultraviolet bandpass filter with a center wavelength of 255 nm was cut to match the array size, bonded to the array with optical adhesive, and then encapsulated and protected using epoxy resin or silicone.

[0035] Based on the structure of the ultraviolet array detector in this application embodiment, the β-Ga2O3 bandgap is ~4.8 eV and the absorption edge is ~258 nm, exhibiting no intrinsic response to visible light, infrared, or UVA / UVB, thus fundamentally eliminating most background light interference. Simultaneously, the p-PCDTBT / n-Ga2O3 heterostructure builds a strong built-in electric field, resulting in a dark current as low as pA (2-3 orders of magnitude lower than traditional MSM structures), preventing weak discharge signals from being drowned out by background noise. Furthermore, additional hard filtering via a filter (center wavelength 255 nm, full width at half maximum <20 nm) ensures stable operation even under midday sunlight, completely overcoming the application bottleneck of traditional ultraviolet imaging being "usable at night / on cloudy days, but ineffective on sunny days." This detector structure enables daytime online monitoring of outdoor power equipment.

[0036] Figure 3 A schematic diagram of a power equipment discharge detection system according to an embodiment of this application is shown. Figure 3 As shown in the illustration, this application also discloses a power equipment discharge detection system. The system includes a detector array of at least one ultraviolet (UV) dot matrix detector, a signal acquisition and processing unit, and a monitoring center. The UV dot matrix detector is any of the aforementioned UV dot matrix detectors, used to detect the optical signal of the target power equipment and convert it into an electrical signal for output. The signal acquisition and processing unit is used to determine the discharge detection result of the target power equipment based on the electrical signal. The monitoring center is used to display the discharge detection result of the target power equipment.

[0037] In some embodiments, the ultraviolet (UV) array detectors included in the power equipment discharge detection system are arranged in an array to cover the entire area to be detected. Optionally, the signal processing unit includes a preamplifier, a multiplexer, an analog-to-digital converter (ADC), and a microprocessor. The preamplifier is a multi-channel transimpedance amplifier, the number of which can be the same as the number of pixels in the UV array detector, used to amplify the weak photocurrent generated by the corresponding pixel in each UV array detector. The multiplexer is an M×N to 1 multiplexer, where M×N is the number of pixels in the UV array detector, used to sequentially select the M×N electrical signals acquired by the UV array detector. The ADC can be a high-speed ADC (Analog-to-Digital Converter), used to convert the analog voltage signals output by the detector array into digital quantities that the microprocessor can recognize and calculate. The microprocessor can be an ARM Cortex. The microprocessor uses an M4 core. It controls signal acquisition timing and executes signal processing algorithms (such as background noise subtraction, threshold judgment, pulse counting, and intensity integration). Real-time signal scanning, threshold triggering, data buffering, and positioning algorithms can be implemented through programming. Optionally, in this embodiment, the system can also use a LoRa module as a communication interface for wireless data transmission.

[0038] Optionally, the processing algorithm executed by the microprocessor may include a localization algorithm and a recognition algorithm. The localization algorithm can calculate the two-dimensional coordinates (X, Y) of the discharge point on the array plane using the centroid method or peak lookup method based on the signal intensity distribution of the response of all pixel units in the array when the discharge event occurs. The recognition algorithm can identify the discharge type by comparing the amplitude spectrum, repetition rate, phase distribution (if synchronized with the power frequency), and spatial distribution characteristics of the discharge pulse with a preset feature library of typical discharge types (such as corona discharge, surface discharge, and internal air gap discharge).

[0039] For example, in the power equipment discharge detection system of this application embodiment, when discharge detection of power equipment is required, an array of multiple ultraviolet dot matrix detectors is installed inside the observation window of the power equipment under test, at a key location inside the casing, or guided to the monitoring point via an optical fiber bundle, ensuring that its field of view covers the insulation area to be monitored. Further, the entire system is powered on and initialized, and the signal acquisition module begins to continuously or periodically inspect each pixel unit in each ultraviolet dot matrix detector. When partial discharge or arcing occurs in the power equipment, the generated solar-blind ultraviolet photons pass through the equipment's observation window or air gap, and after passing through a solar-blind ultraviolet filter, are received by the detector array. Each pixel unit in the array converts the ultraviolet photons into a photocurrent signal, the intensity of which is proportional to the ultraviolet light flux reaching that pixel. Further, the photocurrent signal is amplified and converted by a preamplifier, multiplexer, and analog-to-digital converter before being transmitted to the microprocessor.

[0040] The microprocessor acquires signals from each pixel in real time. When any pixel signal exceeds a set threshold, it is determined to be a discharge event, and the transient or integral response values ​​of all pixels in that event are recorded. Simultaneously, the microprocessor calculates the spatial location (X, Y) of the discharge event based on the array response intensity distribution matrix recorded in step S5. It also analyzes and identifies the event by combining the temporal characteristics of the discharge signal. After the microprocessor completes the location and analysis operations for discharge detection, it packages alarm or status information including timestamp, location coordinates, discharge intensity, and suspected type and sends it to the monitoring system. The monitoring system then uses multi-event statistical information (such as discharge frequency) to... Phase spectrum and position evolution trend) are used to assess insulation status and provide early warning of potential faults.

[0041] In the power equipment discharge detection system of this application embodiment, when a detector array consisting of 3×3 ultraviolet dot array detectors is included, after detecting a discharge event, the response intensity matrix I obtained by the microprocessor can be: The microprocessor determines the array's physical coordinates as Further calculation X = (Σ) i Σ j I ij ·x ij ) / Σ i Σ j I ij Y = (Σ i Σ j I ij ·y ij ) / Σ i Σ j I ij And the positioning accuracy = pixel pitch / (2·SNR) ≈ 2.5mm / (2·√41) ≈ 0.20mm (assuming Poisson noise, SNR = √total photon count), determine the total intensity S = ΣI ij = 2+5+3+4+15+6+1+3+2 = 41 nA. Further calculation of the weighted sum of the X coordinates yields X_sum = 1.25×(2+4+1) + 3.75×(5+15+3) + 6.25×(3+6+2) = 163.75, and the weighted sum of the Y coordinates yields Y_sum = 1.25×(2+5+3) + 3.75×(4+15+6) + 6.25×(1+3+2) = 143.75. Therefore, the coordinates of the discharge point are determined as X = X_sum / S = 163.75 / 41 ≈ 3.99 mm, Y = Y_sum / S = 143.75 / 41 ≈ 3.51 mm.

[0042] Figure 4 This diagram illustrates an application scenario of a power equipment discharge detection system according to an embodiment of this application. Figure 4As shown, when electronic devices use the power discharge detection system of this application embodiment for discharge detection, a detector array module (such as a 4×4 array) composed of multiple ultraviolet dot matrix detectors can be installed inside the observation window of the switchgear busbar compartment, with the field of view aligned with the busbar connection and insulation support components, which are prone to discharge, for discharge detection. The signal processing unit is installed inside the terminal box. The system is powered by the DC power supply inside the cabinet. When a partial discharge occurs inside the cabinet, the detector array detects the ultraviolet signal. For example, in a discharge event, the array response intensity matrix shows that the signals of pixels (2,3), (2,4), (3,3), and (3,4) are significantly higher than those of other pixels. The positioning algorithm calculates that the discharge point is located near the array coordinates (2.5, 3.5). Combined with the switchgear structural drawings, the actual discharge point can be mapped to the junction of a certain phase busbar and insulator. The system sends the alarm information "Location: (X,Y); Intensity: Strong; Time: February 13, 2026, 16:28:33" to the handheld terminal of the inspection personnel or the background monitoring system via LoRa.

[0043] Furthermore, in the application scenario of partial discharge detection and location in gas-insulated switchgear (GIS), for GIS, the embodiments of this application can couple multiple small detector arrays (e.g., 2×2) through fiber optic bundles and install them at observation windows near different gas chambers or key components (e.g., basin insulators, isolation breaks) to form a distributed monitoring network. When a discharge occurs in a gas chamber, the array at the corresponding location is triggered, not only reporting that there is a discharge in the gas chamber, but also further locating the relative position of the discharge point within the gas chamber through the pixel response inside the array. After the data from multiple arrays are aggregated, comprehensive monitoring of the entire GIS bay and rapid location of fault sections can be achieved.

[0044] Based on the aforementioned technical features, the power equipment discharge detection system of this application creatively constructs a system for discharge detection using an array of ultraviolet dot matrix detectors. For the first time, it deeply integrates high-performance wide-bandgap semiconductor materials with a dot matrix staring imaging architecture, achieving a paradigm shift in power equipment discharge detection from "presence / absence judgment" to "precise positioning and intelligent identification." Regarding sensitivity and environmental adaptability, the intrinsic solar-blind response of β-Ga2O3 and the dual spectral purification of the dielectric filter, combined with the extremely low pA-level dark current of the heterojunction, enable the system to stably capture weak discharge signals even under strong midday light, completely overcoming the application bottleneck of traditional ultraviolet imaging's "daytime failure and weak missed detection." In terms of spatial positioning, it abandons the traditional optical scanning mechanism and adopts an M×N dot matrix staring architecture and a centroid-based positioning algorithm, achieving sub-millimeter level (0.20 mm in the example) positioning without mechanical movement. The system performs discharge coordinate calculation (mm) and has the ability to distinguish multiple discharge sources, reducing the monitoring granularity from the "equipment level" to the "component / point level". In terms of engineering adaptability, the all-solid-state chip-level packaging allows the detector module to be embedded and mounted in the observation window of switchgear, GIS and other equipment. The wide bandgap material system gives it the ability to withstand harsh environments with high temperature resistance, radiation resistance and long life, while the built-in electric field of the pn heterojunction gives the device the potential for self-powered operation, laying the foundation for zero external power supply wireless sensing nodes. In terms of intelligent diagnosis, the system deeply integrates the time domain, frequency domain and spatial distribution characteristics of discharge pulses, and has a built-in discharge type recognition engine, which can initially distinguish fault modes such as corona, surface, and internal air gap. Through coordinate mapping and linkage with equipment structure drawings, it can directly output executable maintenance commands such as "root of a certain phase busbar" and "high voltage side of No. 2 insulator".

[0045] It should be understood that although the steps in the above flowcharts are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the above flowcharts may include multiple sub-steps or multiple stages. These sub-steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these sub-steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the sub-steps or stages of other steps.

[0046] It should be noted that, in the embodiments of this application, if the microprocessor-implemented method in the above system is implemented as a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiments of this application, or the part that contributes to the related technology, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause an electronic device to execute all or part of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as USB flash drives, portable hard drives, read-only memory (ROM), magnetic disks, or optical disks. Thus, the embodiments of this application are not limited to any specific hardware and software combination.

[0047] It should be understood that the phrases "one embodiment," "an embodiment," or "some embodiments" mentioned throughout the specification mean that a specific feature, structure, or characteristic related to an embodiment is included in at least one embodiment of this application. Therefore, phrases such as "in one possible implementation," "in one embodiment," or "in some embodiments" appearing throughout the specification do not necessarily refer to the same embodiment. Furthermore, these specific features, structures, or characteristics can be combined in any suitable manner in one or more embodiments. It should be understood that in the various embodiments of this application, the sequence numbers of the above-described processes do not imply a sequential order of execution; the execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of this application. The sequence numbers of the above-described embodiments are merely for descriptive purposes and do not represent the superiority or inferiority of the embodiments. The descriptions of the various embodiments above tend to emphasize the differences between the various embodiments; their similarities or commonalities can be referred to mutually, and for the sake of brevity, they will not be repeated here.

[0048] In this article, the term "and / or" is merely a description of the relationship between related objects, indicating that there can be three kinds of relationships. For example, object A and / or object B can represent three situations: object A exists alone, object A and object B exist simultaneously, and object B exists alone.

[0049] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0050] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The embodiments described above are merely illustrative. For example, the division of modules is only a logical functional division, and in actual implementation, there may be other division methods, such as: multiple modules or components can be combined, or integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the various components shown or discussed can be through some interfaces, and the indirect coupling or communication connection between devices or modules can be electrical, mechanical, or other forms.

[0051] The modules described above as separate components may or may not be physically separate. The components shown as modules may or may not be physical modules. They may be located in one place or distributed across multiple network units. Some or all of the modules may be selected to achieve the purpose of this embodiment according to actual needs.

[0052] In addition, each functional module in the various embodiments of this application can be integrated into one processing unit, or each module can be a separate unit, or two or more modules can be integrated into one unit; the integrated modules can be implemented in hardware or in the form of hardware plus software functional units.

[0053] Those skilled in the art will understand that all or part of the steps of the above method embodiments can be implemented by hardware related to program instructions. The aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it performs the steps of the above method embodiments. The aforementioned storage medium includes various media that can store program code, such as mobile storage devices, read-only memory (ROM), magnetic disks, or optical disks.

[0054] Alternatively, if the integrated units described above are implemented as software functional modules and sold or used as independent products, they can also be stored in a computer-readable storage medium. Based on this understanding, the technical solutions of the embodiments of this application, or the parts that contribute to related technologies, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions to cause an electronic device to execute all or part of the methods described in the various embodiments of this application. The aforementioned storage medium includes various media capable of storing program code, such as mobile storage devices, ROMs, magnetic disks, or optical disks.

[0055] The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments.

[0056] The features disclosed in the several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments.

[0057] The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method or device embodiments.

[0058] The above description is merely an embodiment of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An ultraviolet array detector, characterized in that, It includes a filter layer, an active layer, a charge separation layer, a two-dimensional material modification layer, and interdigitated electrodes; The filter layer is used to filter mixed light to obtain solar-blind ultraviolet light; The active layer is made of β-Ga2O3 and is used to convert solar-blind ultraviolet photons into randomly distributed electron-hole pairs. The charge separation layer is used to convert randomly distributed electron-hole pairs into directional drifting electrons and holes; The two-dimensional material modification layer is used to transport drifting electrons through the electrode interface; The interdigitated electrodes are used to convert electrons passing through the electrode interface into electrical signals for output.

2. The ultraviolet array detector according to claim 1, characterized in that, It also includes the substrate and the packaging layer; The substrate is a high thermal conductivity insulating semiconductor, used to support the overall structure of the ultraviolet dot array detector; The encapsulation layer is used to protect the internal components of the ultraviolet array detector.

3. The ultraviolet array detector according to claim 2, characterized in that, It also includes a buffer layer; The buffer layer is a wide-bandgap semiconductor thin film used to suppress oxidation on the substrate surface.

4. The ultraviolet array detector according to claim 3, characterized in that, The layers in the ultraviolet array detector are arranged from bottom right to top as follows: substrate, buffer layer, active layer, interdigitated electrode, charge separation layer, two-dimensional material modification layer, filter layer, and encapsulation layer.

5. The ultraviolet array detector according to claim 4, characterized in that, The active layer is formed by magnetron sputtering using a Ga2O3 ceramic target on the buffer layer or the substrate.

6. The ultraviolet array detector according to claim 4, characterized in that, The interdigitated electrodes are formed by photolithography and electron beam evaporation on the surface of the active layer.

7. The ultraviolet array detector according to claim 4, characterized in that, The charge separation layer is located at the β of the interdigitated electrode. A mixed solution of PCDTBT dissolved in chlorobenzene solution is formed by spin-coating PCDTBT onto the surface of Ga2O3.

8. The ultraviolet array detector according to claim 4, characterized in that, The two-dimensional material modification layer is formed on the charge separation layer by means of transfer or direct growth.

9. The ultraviolet array detector according to claim 4, characterized in that, The filtering layer includes a solar-blind ultraviolet bandpass filter with matched array size, and the filter is attached to the upper surface of the encapsulation layer by optical adhesive.

10. A discharge detection system for power equipment, characterized in that, The system includes a detector array, a signal acquisition and processing unit, and a monitoring center; The detector array includes at least one ultraviolet dot array detector as described in any one of claims 1-9, used to detect the optical signal of the target power equipment and output it after converting it into an electrical signal. The signal acquisition and processing unit is used to determine the discharge detection result of the target power equipment based on the electrical signal; The monitoring center is used to display the discharge detection results of the target power equipment.

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