Radio frequency voltage balancing circuit, filter, chuck, and semiconductor device

Abstract

This application discloses an RF voltage balancing circuit, a filter, a chuck, and a semiconductor device. The RF voltage balancing circuit is used in a semiconductor device including a power supply and powered components. The powered components include a chuck, an upper electrode, an edge ring, and / or a temperature control link. The RF voltage balancing circuit includes at least two power supply loops and at least one filter circuit. Each power supply loop includes two power supply links. Each power supply link connects a powered component to the power supply, so that the power supply supplies power to the powered component via the power supply loop. The powered component is coupled with an RF signal. Each filter circuit allows the RF signal to pass through while blocking the power supply current, which is the current supplied by the power supply to the powered component via the power supply link. At least two of the at least two power supply loops satisfy the condition that at least one filter circuit is connected between the two power supply loops. This application can reduce RF losses and improve the efficiency and quality of semiconductor processes.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to radio frequency voltage balancing circuits, filters, chucks, and semiconductor devices. Background Technology

[0002] Semiconductor equipment 1 may include etching equipment (e.g., plasma etching equipment), deposition equipment (e.g., physical vapor deposition equipment and chemical vapor deposition equipment), etc. Plasma etching equipment is used to produce semiconductor devices. It creates semiconductor chips by exciting plasma within a chamber and etching the wafer. A wafer refers to a silicon wafer used in the fabrication of silicon semiconductor integrated circuits. It is the basic material for manufacturing semiconductor chips. Various transistors and circuit elements on a semiconductor chip are manufactured on the wafer through a series of processes such as photolithography, etching, and deposition.

[0003] In semiconductor equipment, radio frequency (RF) signals often couple into the power supply link, causing RF leakage. This results in RF signal loss in the power supply link, reducing the process energy of the RF signal used for chamber plasma, and affecting the quality and efficiency of semiconductor processes. Summary of the Invention

[0004] This application discloses radio frequency voltage balancing circuits, filters, chucks, and semiconductor devices for improving semiconductor process quality and efficiency.

[0005] In a first aspect, this application provides a radio frequency voltage balancing circuit applied to a semiconductor device, the semiconductor device including a power supply and a power-consuming component; the power-consuming component including one or more of a chuck, an upper electrode, an edge ring, and a temperature control link; the radio frequency voltage balancing circuit including at least two power supply loops and at least one filter circuit; each power supply loop including two power supply links; each power supply link is used to connect the power-consuming element of the power-consuming component and the power supply, such that the power supply supplies power to the power-consuming element via the power supply loop formed by the power supply links; the power-consuming element is coupled with a radio frequency signal; each filter circuit is used to allow the radio frequency signal to pass through and to block the power supply current from passing through, the power supply current being the current supplied by the power supply to the power-consuming element via the power supply link; and at least two of the at least two power supply loops satisfy that at least one filter circuit is connected between the two power supply loops.

[0006] In the above embodiments, at least one filter circuit is connected between the two power supply circuits, and the filter circuit is used to pass radio frequency (RF) signals. Therefore, after the two power supply circuits are connected via the filter circuit, the RF signal leaked into the power supply link can reach the other power supply circuit through one power supply circuit. This process can be regarded as an RF short circuit between the two power supply circuits, avoiding or mitigating the resonance of the RF signal between the two power supply circuits (in the case of resonance, it can be understood that there is a large real part of impedance between the two power supply circuits, and the RF signal is lost at the real part of impedance). This can reduce the RF voltage difference across the filter circuit to near equipotential, reduce the RF broadband resonance caused by mutual coupling of cables or components, reduce coupling parasitic effects, eliminate or weaken coupling resonance, significantly reduce the real part of impedance, reduce the loss of RF signal, and thus improve the efficiency, quality and consistency of semiconductor processes.

[0007] Furthermore, the power supply links for different chambers within the same equipment, or for chambers in different equipment, may be inconsistent, leading to variations in RF leakage between chambers. Therefore, RF loss can also affect the consistency of semiconductor devices. The RF balancing circuit of this application reduces RF loss, thereby minimizing the differences in RF loss between semiconductor chambers and improving the consistency of semiconductor devices.

[0008] Finally, the filter circuit prevents the supply current from passing through. Therefore, the supply current generated by the power supply will not pass through the filter circuit, but will be transmitted along the power supply link. In other words, the setting of the filter circuit will not have an adverse effect on the supply current generated by the power supply.

[0009] In some embodiments, one or more power supply links in the RF voltage balancing circuit satisfy the condition that a filter circuit is connected between the power supply link and at least one other power supply link in the RF voltage balancing circuit (excluding itself).

[0010] In the above embodiments, half or more of the power supply links are connected to other power supply links through filtering circuits, so that most of the power supply links can achieve radio frequency short circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0011] In some embodiments, each power supply link in the RF voltage balancing circuit satisfies the following condition: it is connected to at least one other power supply link in the RF voltage balancing circuit besides itself via a filter circuit.

[0012] In the above embodiments, all power supply links are connected to other power supply links through filter circuits, so that all power supply links in the power supply links can achieve radio frequency short circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0013] In some embodiments, at least one of the at least two power supply circuits satisfies the following condition: at least one filter circuit is connected between two power supply links belonging to the same power supply circuit.

[0014] In the above embodiments, considering that radio frequency resonance may also occur between two power supply links belonging to the same power supply circuit, at least one filter circuit is connected between the two power supply links belonging to the same power supply circuit. This is beneficial to achieve radio frequency short circuit within the same power supply circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0015] In some embodiments, at least one power supply link is provided with a filtering component, which is used to allow the power supply current to pass through and block the radio frequency signal from passing through; the connection node of the filtering circuit and the power supply link is located between the filtering component and the power-consuming component on the power supply link.

[0016] In the above embodiments, by setting up a filtering component, the passage of radio frequency (RF) signals coupled from the power-consuming components can be prevented, minimizing the transmission of RF signals into the power supply. This facilitates the filtering of RF signals, avoids affecting the normal operation of the power supply, and thus ensures the quality and efficiency of the semiconductor process. Furthermore, since the RF signal is coupled from the power-consuming components, this addresses RF leakage at its initial stage, helping to mitigate RF leakage.

[0017] In some embodiments, at least one power supply link is provided with at least a first filter component and a second filter component. The first filter component is closer to the power-consuming element than the second filter component. Both the first and second filter components are used to allow power supply current to pass through. The first filter component is also used to block the passage of radio frequency signals with a frequency greater than a first threshold. The second filter component is also used to block the passage of radio frequency signals with a frequency greater than a second threshold. The first threshold is greater than the second threshold. At least one filter circuit includes one or more first filter circuits and one or more second filter circuits. The connection node between the first filter circuit and the power supply link is disposed between the power-consuming element and the first filter component. The first filter circuit is used to allow the radio frequency signals blocked by the first filter component to pass through. The connection node between the second filter circuit and the power supply link is disposed between the first filter sub-component and the second filter component. The second filter circuit is used to allow the radio frequency signals blocked by the second filter component to pass through.

[0018] In the above embodiments, the first filter component and the second filter component can respectively block radio frequency signals of different frequencies, which is more targeted and helps to reduce the radio frequency signals entering the power supply more precisely, thereby reducing radio frequency leakage; the radio frequency signals blocked by the first filter component and the second filter component can respectively achieve radio frequency short circuit through the first filter circuit and the second filter circuit, which also helps to reduce radio frequency leakage.

[0019] In some embodiments, the withstand voltage of each filter circuit is greater than or equal to the maximum RF voltage difference between any two power supply links.

[0020] In the above embodiments, considering that the voltage on different power supply links may be different, the withstand voltage of the filter circuit is greater than the maximum RF voltage difference between any two power supply links, which helps to avoid filter circuit failure, thereby improving durability and reducing maintenance.

[0021] According to a second aspect of the present application, a radio frequency voltage balancing circuit is provided, applied to a semiconductor device, the semiconductor device including a power supply and a power-consuming component; the power-consuming component includes one or more of a chuck, an upper electrode, an edge ring, and a temperature control link; the radio frequency voltage balancing circuit includes N power supply links and M filter circuits; each of the N power supply links is used to connect a power-consuming element of the power-consuming component to the power supply, such that the power supply supplies power to the power-consuming element through the N power supply links, the power-consuming element being coupled with a radio frequency signal, where N is an integer greater than or equal to 2; and M is an integer greater than or equal to 1; each filter circuit is used to allow the radio frequency signal to pass through and to block the supply current from passing through, the supply current being the current supplied by the power supply to the power-consuming element via the power supply link; and at least one of the N power supply links satisfies that: it is connected to at least one filter circuit with other power supply links in the radio frequency voltage balancing circuit besides itself.

[0022] In the above embodiments, at least one power supply link satisfies the following condition: it is connected to at least one filter circuit with other power supply links in the RF voltage balancing circuit (excluding itself), and the filter circuit is used to pass RF signals with frequencies within a specified range. Therefore, after the two power supply links are connected via the filter circuit, the RF signal leaked into the power supply link can reach the other power supply link via the filter circuit. This process can be regarded as an RF short circuit between the two power supply links, avoiding resonance of the RF signal between the two power supply links (in the case of resonance, it can be understood that there is a large real part of impedance between the two power supply links, and the RF signal generates loss at the real part of impedance), reducing the RF voltage difference across the filter circuit to even approach equipotential, reducing RF broadband resonance caused by mutual coupling of cables or components, reducing coupling parasitic effects, eliminating or weakening coupling resonance, significantly reducing the real part of impedance, reducing RF signal loss, and improving the consistency of semiconductor devices.

[0023] Furthermore, the power supply links for different chambers within the same equipment, or for chambers in different equipment, may be inconsistent, leading to variations in RF leakage between chambers. Therefore, RF loss can also affect the consistency of semiconductor devices. The RF balancing circuit of this application reduces RF loss, thereby minimizing the differences in RF loss between semiconductor chambers and improving the consistency of semiconductor devices.

[0024] Finally, each filter circuit blocks the supply current from passing through. Therefore, the supply current generated by the power supply will not pass through the filter circuit, but will be transmitted along the power supply link. In other words, the setting of the filter circuit will not have an adverse effect on the supply current generated by the power supply.

[0025] In some embodiments, N / 2 or more of the N power supply links satisfy the condition that a filter circuit is connected between them and at least one other power supply link among the N power supply links (excluding themselves).

[0026] In the above embodiments, half or more of the power supply links are connected to other power supply links through filtering circuits, so that most power supply links can achieve RF short circuit, thereby further reducing RF resonance and reducing RF signal loss.

[0027] In some embodiments, each of the N power supply links satisfies the following condition: it is connected to at least one other power supply link among the N power supply links besides itself, via a filter circuit.

[0028] In the above embodiments, all power supply links are connected to other power supply links through filter circuits, enabling all power supply links to achieve RF short circuit, thereby further reducing RF resonance and RF signal loss.

[0029] In some embodiments, at least one power supply link is provided with a filtering component, which is used to allow the power supply current to pass through and block the radio frequency signal from passing through; the connection node of the filtering circuit and the power supply link is located between the filtering component and the power-consuming component on the power supply link.

[0030] In the above embodiments, the filtering component can filter out radio frequency (RF) signals, preventing RF signals from entering the power supply and affecting its normal operation. In some embodiments, the filtering component filters out RF signals by reflecting them, which can reduce RF leakage. The filtering component is positioned between the power-consuming component and the filtering inductor. Since the RF signal is coupled from the power-consuming component, this addresses RF leakage at its initial stage, thus helping to mitigate RF leakage.

[0031] In some embodiments, at least one power supply link is provided with at least a first filter component and a second filter component. The first filter component is closer to the power-consuming element than the second filter component. Both the first filter component and the second filter component are used to allow the power supply current to pass through. The first filter component is also used to block the radio frequency signal with a frequency greater than a first threshold from passing through. The second filter component is also used to block the radio frequency signal with a frequency greater than a second threshold from passing through. The first threshold is greater than the second threshold. M filter circuits include one or more first filter circuits and one or more second filter circuits. The connection node between the first filter circuit and the power supply link is disposed between the power-consuming element and the first filter component. The first filter circuit is used to allow the radio frequency signal blocked by the first filter component to pass through. The connection node between the second filter circuit and the power supply link is disposed between the first filter sub-component and the second filter component. The second filter circuit is used to allow the radio frequency signal blocked by the second filter component to pass through.

[0032] In the above embodiments, the first filter component and the second filter component can block radio frequency signals of different frequencies respectively, which can be adjusted more precisely and is conducive to further reducing radio frequency leakage.

[0033] In some embodiments, the withstand voltage of each filter circuit is greater than or equal to the maximum RF voltage difference between any two power supply links among the N power supply links.

[0034] In the above embodiments, the voltages on different power supply links may be different. The withstand voltage of the filter circuit is greater than the maximum RF voltage difference between any two power supply links, which helps to avoid filter circuit failure, thereby improving durability and reducing maintenance.

[0035] Thirdly, this application provides a printed circuit board including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0036] Fourthly, this application provides a filter, including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0037] Fifthly, this application provides a chuck including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0038] Sixthly, this application provides an upper electrode, including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0039] In a seventh aspect, this application provides an edge ring, including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0040] Eighthly, this application provides a temperature control link, including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0041] Ninthly, this application provides a semiconductor chamber including the radio frequency voltage balancing circuit described in any of the above embodiments.

[0042] In a tenth aspect, this application provides a semiconductor device including the radio frequency voltage balancing circuit described in any of the above embodiments. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0044] Figure 1 This is a schematic diagram of the structure of a semiconductor device according to some embodiments of this application.

[0045] Figure 2 This is a schematic diagram of a radio frequency voltage balancing circuit according to some embodiments of this application. Figure 1 .

[0046] Figures 3-5 These are schematic diagrams of the filter circuits according to different embodiments of this application.

[0047] Figure 6 This is a loss diagram of an RF voltage balancing circuit according to some embodiments of this application.

[0048] Figure 7 This is a schematic diagram of a radio frequency voltage balancing circuit according to some embodiments of this application. Figure 2 .

[0049] Figure 8 This is a schematic diagram of a radio frequency voltage balancing circuit according to some embodiments of this application. Figure 3 .

[0050] Explanation of reference numerals in the attached figures: 1-Semiconductor equipment; 10-Cavity; 101-Cavity wall; 102-Cavity cover; 103-External component; 104-Internal component; 105-Shielding cover; 106-Upper chamber ring; 107-Ion source region; 108-Base; 109-Cavity bushing; 1010-Edge ring; 1011-Cavity ring; 1012-Ionization region; 1013-Source ring; 20-Chuck; 30 - RF source; 40 - RF matching unit; 50 - Filter; 60-Power supply; 70-RF rod; 80-RF voltage balancing circuit; 81-Power supply circuit; 82-Power supply link; 83-Filter circuit; 831-First filter circuit; 832-Second filter circuit; 833-Third filter circuit; 84-Filtering component; 841-First filtering component; 842-Second filtering component; 843-Third filtering component; Detailed Implementation It should be noted that the terms "first" and "second" used in the embodiments of this application are only used to distinguish features of the same type and should not be construed as indicating relative importance, quantity, order, etc.

[0051] The terms "exemplary" or "for example" used in the embodiments of this application are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in this application should not be construed as being more preferred or advantageous than other embodiments or designs. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0052] The terms “coupling,” “coupled,” and “connection” used in the embodiments of this application should be interpreted broadly. For example, they can refer to a physical direct connection or an indirect connection achieved through electronic devices.

[0053] Semiconductor equipment 1 may include etching equipment (e.g., plasma etching equipment), deposition equipment (e.g., physical vapor deposition equipment and chemical vapor deposition equipment), etc.

[0054] Plasma etching equipment is used to produce semiconductor devices. It creates semiconductor chips by exciting plasma within a chamber and etching the wafer. A wafer refers to a silicon wafer used in the fabrication of silicon semiconductor integrated circuits. It is the basic material for manufacturing semiconductor chips. Various transistors and circuit components on semiconductor chips are manufactured on wafers through a series of processes such as photolithography, etching, and deposition.

[0055] Plasma etching equipment may include, but is not limited to, capacitively coupled plasma (CCP) etching equipment and inductively coupled plasma (ICP) etching equipment.

[0056] like Figure 1 As shown, Figure 1This is a schematic diagram of the structure of a semiconductor device 1 provided in an embodiment of this application. The semiconductor device 1 includes: a cavity 10, a chuck 20, a radio frequency generator (RFG) 30, a matching network (Match) 40, a filter 50, also known as a radio frequency filter (RFFilter), a power supply 60, and a radio frequency rod (RF Rod) 70.

[0057] The cavity 10 includes: a cavity wall 101 (specifically...) Figure 1 The structure includes: a centrally located dotted filling structure, a chamber lid (Lid) 102, an outer assembly (OA) 103, an inner assembly (IA) 104, a shield (SHD) 105, an upper chamber ring (UCR) 106, an ion source region (ISR) 107, a base 108, a chamber liner (Liner) 109, an external ring (EXR) 1010, a chamber ring (CR) 1011, an ionization region (IR) 1012, and a source ring (SR) 1013.

[0058] The chamber wall 101 and chamber cover 102 form a closed vacuum chamber. The internal component 104 is located below the chamber cover 102, serving as the upper electrode of the chamber 10 and constituting the upper boundary of the vacuum chamber. It cooperates with the chuck 20, which serves as the lower electrode, to form a radio frequency electric field, used to excite the reactive gas within the chamber to generate plasma. The plasma, ionized gas excited by the radio frequency electric field, contains high-energy ions, active free radicals, and other particles, providing energy and a reaction medium for the etching reaction. The upper chamber ring 106 serves as an annular constraint on the upper part of the chamber, used to help define the plasma region. The ion source region 107 serves as the plasma generation source, used to ionize the process gas into plasma. The base 108 serves as a support base, used to support the chuck 20. The chamber bushing 109 protects the chamber body, and the edge ring 1010 serves as an annular constraint around the base 108, used to focus the plasma to the wafer center, suppress edge effects, and protect the edges of the base 108. The chamber ring 1011, as a ring structure in the middle of the chamber, connects the upper and lower chambers and is used to assist in controlling the distribution and flow of plasma. The ionization region 1012 refers to the region with the highest plasma density. By adjusting the potential, shape and other parameters of the source ring 1013, the plasma source characteristics can be affected.

[0059] The chuck 20 can be an electrostatic chuck (ESC) located at the bottom of the vacuum chamber (i.e. above the base 108) to fix the wafer by electrostatic adsorption or mechanical clamping. It also serves as the lower RF electrode to couple RF power into the plasma and can integrate temperature control functions to precisely control the wafer's process temperature in order to adjust the uniformity of the wafer's critical dimension (CD).

[0060] Radio frequency source 30 provides radio frequency power, which provides energy for the excitation and maintenance of plasma and is the energy core of the etching reaction.

[0061] The radio frequency matching unit 40 connects the radio frequency source 30 and the radio frequency rod 70. It is used to adjust the impedance of the radio frequency system so that the output impedance of the radio frequency source 30 matches the impedance of the plasma load, thereby maximizing the radio frequency power transmission efficiency and ensuring stable plasma excitation.

[0062] The RF rod 70 serves as a transmission channel for RF power, efficiently transmitting the RF signal output by the RF matching unit 40 to the electrodes of the chuck 20. It is equipped with a power supply cable inside, which is used to independently transmit the power supply current required by the chuck 20, thereby realizing the integrated transmission of RF signal and power supply current.

[0063] Filter 50 connects the power supply cable inside the power supply 60 and the RF rod 70. It is used to filter out RF interference in the power supply current, prevent RF energy from affecting other devices through unexpected paths (such as coupling into the power supply cable), and isolate the influence of RF signals on the power supply 60 to ensure the independent and stable operation of the power supply system and the RF system.

[0064] Power supply 60 provides DC or low-frequency power for auxiliary functions such as electrostatic adsorption and temperature control of chuck 20, and transmits power to chuck 20 through the power supply cable inside radio frequency rod 70.

[0065] The radio frequency source 30 is connected to the chuck 20 in sequence through the radio frequency matching unit 40 and the radio frequency rod 70, and is used to feed radio frequency signals to the chuck 20 through the radio frequency matching unit 40 and the radio frequency rod 70.

[0066] The power supply 60 is connected to the chuck 20 in sequence through the filter 50 and the power supply cable located inside the radio frequency rod 70, providing power for the auxiliary functions of the chuck.

[0067] Because power supply links typically consist of multiple links, and each link cannot be perfectly identical in engineering implementation, RF voltage differences can occur between two power supply links, causing RF signal resonance. This leads to RF signal losses within the power supply links, reducing the process energy of the RF signal used for the chamber plasma, thus affecting semiconductor process quality and efficiency. For example, in semiconductor etching or deposition equipment, RF signal resonance causes losses, reducing the process energy of the RF signal used for the chamber plasma, which affects the etching or deposition rate, thereby impacting process efficiency. Furthermore, since the RF signal losses of different links are usually inconsistent, and different links typically correspond to different regions of the substrate, the inconsistent RF leakage in different regions may also affect the uniformity of etching or deposition, which in turn affects process quality.

[0068] Example 1 Figure 2 This is a schematic diagram of a radio frequency voltage balancing circuit 80 according to some embodiments of this application. Figure 1 . Figures 3-5 This is a schematic diagram of the structure of the filter circuit 83 according to different embodiments of this application. Figure 6 This is a loss diagram of an RF voltage balancing circuit 80 according to some embodiments of this application.

[0069] The radio frequency voltage balancing circuit 80 can be applied to a semiconductor device 1, which includes a power supply 60 and power-consuming components. Here, the power-consuming components may include one or more of a chuck, an upper electrode, an edge ring 1010, and a temperature control link.

[0070] like Figure 2 As shown, the RF voltage balancing circuit 80 includes at least two power supply loops 81 and at least one filter circuit 83. Each power supply loop 81 includes two power supply links 82 (also called channels), each power supply link 82 being used to connect the power-consuming component and the power supply 60, so that the power supply 60 supplies power to the power-consuming component via the power supply loop 81 formed by the power supply links 82. The power-consuming component is coupled with an RF signal.

[0071] Taking a chuck as an example, in some embodiments, the chuck may include multiple heating zones. The heating element (i.e., the electrical component) in each heating zone can be connected to the power supply 60 through a set of power supply circuits 81 formed by two power supply links 82. Therefore, there can be at least two sets of power supply circuits 81, that is, at least four power supply links 82.

[0072] Each filter circuit 83 is used to allow radio frequency (RF) signals to pass through while blocking the flow of supply current, which is the current supplied by power supply 60 to the power-consuming component via power supply link 82. It should be understood that allowing RF signals to pass through the filter circuit 83 with almost no loss. In some embodiments, the filter circuit 83 is, for example, one or more of a high-pass circuit and a band-pass circuit. A high-pass circuit is a circuit that allows signals above a specific frequency (e.g., 2MHz, 27MHz, or 60MHz) to pass through. A band-pass circuit is a circuit that allows signals within a specific frequency range (e.g., 2MHz–27MHz, 27MHz–60MHz) to pass through. The frequency of the RF signal of semiconductor device 1 is typically greater than 0.36MHz, and its typical operating frequency is 2MHz, 27MHz, and 60MHz. The fundamental frequency of power supply 60 is typically 50Hz, and a suitable filter circuit 83 can be selected based on this. Figures 3-5 As shown, high-pass circuits and band-pass circuits can be Figure 3 The capacitor formation shown can also be... Figure 4 The capacitor and inductor shown are connected in parallel, which can also be used for Figure 5 The capacitor and inductor shown are connected in series. The filter circuit 83 can also be in the form of a multi-order LC topology.

[0073] At least two of the at least two power supply circuits 81 satisfy the condition that at least one filter circuit 83 is connected between the two power supply circuits 81.

[0074] In the above embodiment, at least one filter circuit 83 is connected between the two power supply circuits 81, and the filter circuit 83 is used to pass radio frequency (RF) signals. Therefore, after the two power supply circuits 81 are connected via the filter circuit 83, the RF signal leaked into the power supply link 82 can reach the other power supply circuit 81 via one power supply circuit 81. This process can be regarded as an RF short circuit between the two power supply circuits 81, avoiding or reducing the resonance of the RF signal between the two power supply circuits 81 (in the case of resonance, it can be understood that there is a large real part of impedance between the two power supply circuits 81, and the RF signal is lost at the real part of impedance). This can reduce the RF voltage difference across the filter circuit 83 to even approach equipotential, reduce the RF broadband resonance caused by mutual coupling of cables or components, reduce the coupling parasitic effects, eliminate or weaken the coupling resonance, and significantly reduce the real part of impedance, thereby reducing the loss of RF signals and improving the efficiency and quality of semiconductor processes.

[0075] Furthermore, the power supply links for different chambers within the same equipment, or for chambers in different equipment, may be inconsistent, leading to variations in RF leakage between chambers. Therefore, RF loss can also affect the consistency of semiconductor devices. The RF balancing circuit of this application reduces RF loss, thereby minimizing the differences in RF loss between semiconductor chambers and improving the consistency of semiconductor devices.

[0076] Finally, the filter circuit 83 prevents the power supply current from passing through. Therefore, the power supply current generated by the power supply 60 will not be able to pass through the filter circuit 83, but will be transmitted along the power supply link 82. That is, the setting of the filter circuit 83 will not have an adverse effect on the power supply current generated by the power supply 60.

[0077] See Figure 6 , Figure 6 The diagram shows the effect of the proposed solution obtained from experimental testing. Figure 6 The horizontal axis represents the frequency value, and the vertical axis represents the real part of the impedance between power supply links, reflecting the RF loss. The dashed line represents the conventional scheme, and the solid line represents the scheme of this application. It can be seen that in the conventional scheme, there is a clear resonance point 1 near the common operating frequency of semiconductor device 1, 27MHz, and a resonance point 2 near another common operating frequency of semiconductor device 1, 60MHz. The scheme of this application does not show any clear resonance points near these two frequencies, and the real part of the impedance is significantly reduced.

[0078] In some embodiments, at least one of the at least two power supply circuits 81 satisfies the following condition: at least one filter circuit 83 is connected between two power supply links 82 belonging to the same power supply circuit 81.

[0079] In the above embodiments, considering that radio frequency resonance may also occur between two power supply links 82 belonging to the same group of power supply circuits 81, at least one filter circuit 83 is connected between the two power supply links 82 belonging to the same group of power supply circuits 81. This is beneficial to realize radio frequency short circuit within the same group of power supply circuits 81, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0080] In some embodiments, one or more power supply links 82 in the RF voltage balancing circuit 80 satisfy the condition that a filter circuit 83 is connected between them and at least one other power supply link 82 in the RF voltage balancing circuit 80 other than itself.

[0081] In the above embodiments, half or more of the power supply links 82 are connected to other power supply links 82 through the filter circuit 83, so that most of the power supply links 82 can achieve radio frequency short circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0082] Furthermore, more than half of the power supply links 82 in the RF voltage balancing circuit 80 can satisfy the condition that a filter circuit 83 is connected between them and at least one other power supply link 82 in the RF voltage balancing circuit 80 other than itself, which is beneficial to further reduce RF resonance.

[0083] Figure 7 This is a schematic diagram of a radio frequency voltage balancing circuit 80 according to some embodiments of this application. Figure 2 .

[0084] Figure 7 Four power supply links are shown. Let's name them, from top to bottom, as Power Supply Link A, Power Supply Link B, Power Supply Link C, and Power Supply Link D. These four power supply links can form one power supply circuit with Power Supply Link A and Power Supply Link B, and another power supply circuit with Power Supply Link C and Power Supply Link D. This connection method can be applied to the chuck heating scenario described earlier. Power Supply Links A, B, C, and D can also be independent power supply links, meaning they don't need to form a power supply circuit with other links to achieve their function. This connection method is suitable for providing high voltage (HV). Alternatively, two of the four power supply links can form a power supply circuit, and the other two can be independent power supply links. It should be understood that... Figure 7 The four power supply links shown are for illustrative purposes only and are not intended to limit the number of power supply links. The number of power supply links, as well as the number of power supply loops and independent power supply links within them, can be set as needed.

[0085] Furthermore, such as Figure 7 As shown, each power supply link 82 in the RF voltage balancing circuit 80 satisfies the following condition: it is connected to at least one other power supply link 82 in the RF voltage balancing circuit 80 other than itself, by a filter circuit 83.

[0086] In the above embodiments, all power supply links 82 are connected to other power supply links 82 through a filter circuit 83, so that all power supply links 82 in the power supply links 82 can achieve radio frequency short circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0087] As some implementation methods, such Figure 7 As shown, each power supply link 82 is connected to a filter circuit 83 between itself and the two power supply links 82 adjacent to it. Regardless of the number of filter circuits 83 connected between two power supply links 82, as long as there is a filter circuit 83 connected between two power supply links 82, it is considered that there is one filter circuit 83 connected between these two power supply links 82. Then the relationship between the number of filter circuits 83 X and the total number of power supply links Y is X = Y - 1.

[0088] In some embodiments, such as Figure 7 As shown, at least one power supply link 82 is provided with a filter component 84, which allows the supply current supplied by the power supply 60 to pass through while blocking radio frequency signals from passing through. The filter component 84 is, for example, a band-stop circuit. For example, it can block radio frequency signals greater than or equal to 60MHz while allowing supply current less than or equal to 50Hz to pass through. The connection node between the filter circuit 83 and the power supply link 82 is located between the filter component 84 on the power supply link 82 and the power-consuming component.

[0089] In the above embodiments, by setting the filter component 84, the passage of radio frequency (RF) signals coupled from the power-consuming component can be prevented, thus minimizing the conduction of RF signals into the power supply 60. This facilitates the filtering of RF signals, avoids affecting the normal operation of the power supply 60, and ensures the quality and efficiency of the semiconductor process. Furthermore, since the RF signal is coupled from the power-consuming component, the filter component 84 is positioned between the power-consuming component and the filter inductor. This addresses RF leakage at its initial stage, helping to mitigate RF leakage.

[0090] As one implementation method, the filter component 84 filters out radio frequency signals by reflecting radio frequency signals, which can reduce radio frequency leakage and thus improve the quality and efficiency of semiconductor processes.

[0091] In some embodiments, such as Figure 7 As shown, each power supply link 82 can be identical. As one implementation, the combination of filter components 84 configured on each power supply link 82 can be the same, which helps maintain good consistency. It should be understood that the combination of filter components can include different filter components.

[0092] Figure 8 This is a schematic diagram of a radio frequency voltage balancing circuit 80 according to some embodiments of this application. Figure 3 .

[0093] In some embodiments, at least one power supply link 82 is provided with at least one first filter component 841 and a second filter component 842. The first filter component 841 is closer to the power-consuming element than the second filter component 842. Both the first filter component 841 and the second filter component 842 are used to allow the power supply current to pass through. The power supply current is the current supplied by the power supply 60 to the power-consuming element via the power supply link 82. The first filter component 841 is also used to block radio frequency signals with a frequency greater than or equal to a first threshold (e.g., 60 MHz) from passing through. The second filter component 842 is also used to block radio frequency signals with a frequency greater than or equal to a second threshold (e.g., 27 MHz) from passing through. The first threshold is greater than the second threshold.

[0094] At least one filter circuit 83 includes one or more first filter circuits 831 and one or more second filter circuits 832. The first filter circuit 831 is disposed between the power-consuming component and the first filter assembly 841, and is used to allow radio frequency signals blocked by the first filter assembly 841 to pass through. The second filter circuit 832 is disposed between the first filter subassembly and the second filter assembly 842, and is used to allow radio frequency signals blocked by the second filter assembly 842 to pass through.

[0095] Taking a radio frequency signal of 27 MHz or higher as an example, where the first filter component 841 is used to block radio frequency signals with a frequency of 60 MHz or higher from passing through, and the second filter component 842 is used to block radio frequency signals with a frequency of 27 MHz or higher from passing through, radio frequency signals of 60 MHz or higher cannot pass through the first filter component 841, but are short-circuited by the first filter circuit 831; radio frequency signals of 27 MHz or higher and less than 60 MHz, after passing through the first filter component 841, cannot pass through the second filter component 842, and are short-circuited by the second filter circuit 832.

[0096] In the above embodiments, the first filter component 841 and the second filter component 842 can respectively block radio frequency signals of different frequencies, which is more targeted and helps to reduce the radio frequency signals entering the power supply 60 more precisely, thereby reducing radio frequency leakage; the radio frequency signals blocked by the first filter component 841 and the second filter component 842 can be short-circuited via the first filter circuit 831 and the second filter circuit 832 respectively, which also helps to reduce radio frequency leakage.

[0097] In some embodiments, at least one filter circuit 83 may further include one or more third filter circuits 833. The third filter component 843 is used to allow supply current to pass through and block radio frequency signals with frequencies greater than or equal to a third threshold from passing through. The third threshold is, for example, 2 MHz. At least one filter circuit 83 further includes the third filter circuit 833.

[0098] Taking a radio frequency (RF) signal of 2 MHz or higher as an example, where a first filter component 841 blocks RF signals with a frequency of 60 MHz or higher from passing through, a second filter component 842 blocks RF signals with a frequency of 27 MHz or higher from passing through, and a third filter component 843 blocks RF signals with a frequency of 2 MHz or higher from passing through, an RF signal of 60 MHz or higher cannot pass through the first filter component 841 and is short-circuited by the first filter circuit 831; an RF signal of 27 MHz or higher but less than 60 MHz, after passing through the first filter component 841, cannot pass through the second filter component 842 and is short-circuited by the second filter circuit 832; and an RF signal of 2 MHz or higher but less than 27 MHz, after passing through the second filter component 842, cannot pass through the third filter component 843 and is short-circuited by the third filter circuit 833.

[0099] It should be understood that the filter circuit 83 is not limited to Figure 7 The first filter circuit 831, the second filter circuit 832, and the third filter circuit 833 shown may also include more filter circuits 83, and this application does not limit this.

[0100] In some embodiments, the withstand voltage of each filter circuit 83 is greater than or equal to the maximum RF voltage difference between any two power supply links 82. The maximum RF voltage difference is, for example, 100V, 500V, or 1000V, and can be obtained through testing or simulation experiments.

[0101] In the above embodiments, considering that the voltage on different power supply links 82 may be different, the withstand voltage of the filter circuit 83 is greater than the maximum RF voltage difference between any two power supply links 82, which helps to avoid the failure of the filter circuit 83, thereby improving durability and reducing maintenance.

[0102] In some embodiments, a filter circuit 83 can be connected at preset intervals along the power supply link 82. For example, on a 1.5m long power supply link 82, a node can be selected at 0.5m intervals to connect the filter circuit 83.

[0103] In some embodiments, the number of filter circuits 83 that need to be connected to each power supply link 82 can be preset, and then the filter circuits 83 can be arranged accordingly.

[0104] Example 2 The following describes the RF voltage balancing circuit 80, which includes an independent power supply link 82. You can refer to the previous description, and the similarities will not be repeated.

[0105] In some embodiments, the radio frequency voltage balancing circuit 80 is applied to a semiconductor device 1, which includes a power supply 60 and power-consuming components. The power-consuming components include one or more of a chuck, an upper electrode, an edge ring 1010, and a temperature control link. The radio frequency voltage balancing circuit 80 includes N power supply links 82 and M filter circuits 83. The N power supply links 82 can all be independent power supply links 82, or they can include at least one independent power supply link 82 and a power supply link 82 belonging to the power supply loop 81.

[0106] N power supply links 82 are used to connect the power-consuming components of the electrical components to the power supply 60, so that the power supply 60 supplies power to the power-consuming components through the N power supply links 82. The power-consuming components are coupled with radio frequency signals, where N is an integer greater than or equal to 2 and M is an integer greater than or equal to 1. Each filter circuit 83 is used to allow the radio frequency signals to pass through while blocking the supply current, which is the current supplied by the power supply 60 to the power-consuming components via the power supply links 82. At least one of the N power supply links 82 satisfies the condition that it is connected to at least one filter circuit 83 with each of the other power supply links 82 in the radio frequency voltage balancing circuit 80 (excluding itself).

[0107] In the above embodiments, at least one power supply link 82 satisfies the following condition: it is connected to at least one filter circuit 83 with other power supply links 82 in the RF voltage balancing circuit 80 (excluding itself), and the filter circuit 83 is used to pass RF signals with frequencies within a specified range. Therefore, after the two power supply links 82 are connected via the filter circuit 83, the RF signal leaked into the power supply link 82 can reach the other power supply link 82 via the filter circuit 83. This process can be regarded as an RF short circuit between the two power supply links 82, avoiding resonance of the RF signal between the two power supply links 82 (in the case of resonance, it can be understood that there is a large real part of impedance between the two power supply links 82, and the RF signal is lost at the real part of impedance), reducing the RF voltage difference across the filter circuit 83 to even approach equipotential, reducing RF broadband resonance caused by mutual coupling of cables or components, reducing coupling parasitic effects, eliminating or weakening coupling resonance, significantly reducing the real part of impedance, reducing RF signal loss, and improving the consistency of the semiconductor device 1.

[0108] In addition, each filter circuit 83 blocks the supply current from passing through. Therefore, the supply current generated by the power supply 60 will not be able to pass through the filter circuit 83, but will be transmitted along the power supply link 82. That is, the setting of the filter circuit 83 will not have an adverse effect on the supply current generated by the power supply 60.

[0109] In some embodiments, N / 2 or more of the N power supply links 82 satisfy the condition that a filter circuit 83 is connected between them and at least one other power supply link 82 among the N power supply links 82 other than themselves.

[0110] In the above embodiments, half or more of the power supply links 82 are connected to other power supply links 82 through the filter circuit 83, so that most of the power supply links 82 can achieve RF short circuit, thereby further reducing RF resonance and reducing RF signal loss.

[0111] In some embodiments, each of the N power supply links 82 satisfies the following condition: a filter circuit 83 is connected between it and at least one other power supply link 82 among the N power supply links 82 other than itself.

[0112] In the above embodiments, all power supply links 82 are connected to other power supply links 82 through a filter circuit 83, so that all power supply links 82 can achieve radio frequency short circuit, thereby further reducing radio frequency resonance and reducing radio frequency signal loss.

[0113] In some embodiments, at least one power supply link 82 is provided with a filter component 84, which is used to allow the power supply current to pass through and block the radio frequency signal from passing through. The power supply current is the current supplied by the power supply 60 to the power-consuming component via the power supply link 82. The connection node between the filter circuit 83 and the power supply link 82 is located between the filter component 84 on the power supply link 82 and the power-consuming component.

[0114] In the above embodiments, the filter component 84 can filter out radio frequency (RF) signals, preventing RF signals from entering the power supply 60 and affecting its normal operation. In some embodiments, the filter component 84 filters out RF signals by reflecting them, which can reduce RF leakage. The filter component 84 is disposed between the power-consuming component and the filter inductor. Since the RF signal is coupled from the power-consuming component, this addresses the RF leakage issue at its initial stage, which helps to mitigate RF leakage.

[0115] In some embodiments, at least one power supply link 82 is provided with at least one first filter component 841 and one second filter component 842. The first filter component 841 is closer to the power-consuming element than the second filter component 842. Both the first filter component 841 and the second filter component 842 are used to allow power supply current to pass through. The power supply current is the current supplied by the power supply 60 to the power-consuming element via the power supply link 82. The first filter component 841 is also used to block radio frequency signals with a frequency greater than a first threshold from passing through; the second filter component 842 is also used to block radio frequency signals with a frequency greater than a second threshold from passing through. The first threshold is greater than the second threshold. M filter circuits 83 include one or more first filter circuits 831 and one or more second filter circuits 832. The first filter circuit 831 is disposed between the power-consuming element and the first filter component 841, and the first filter circuit 831 is used to allow radio frequency signals blocked by the first filter component 841 to pass through; the second filter circuit 832 is disposed between the first filter sub-component and the second filter component 842, and the second filter circuit 832 is used to allow radio frequency signals blocked by the second filter component 842 to pass through.

[0116] In the above embodiments, the first filter component 841 and the second filter component 842 can block radio frequency signals of different frequencies respectively, which can be adjusted more precisely and is conducive to further reducing radio frequency leakage.

[0117] In some embodiments, the withstand voltage of the filter circuit 83 is greater than or equal to the maximum RF voltage difference between any two power supply links 82 among the N power supply links 82.

[0118] In the above embodiments, the voltage on different power supply links 82 may be different. The withstand voltage of the filter circuit 83 is greater than the maximum RF voltage difference between any two power supply links 82, which helps to avoid the failure of the filter circuit 83, thereby improving durability and reducing maintenance.

[0119] Example 3 Based on the above embodiments, this embodiment provides a printed circuit board (PCB) including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0120] The PCB can be located inside the filter 50, in the temperature control link, or in other locations within the semiconductor device 1; this application makes no restrictions on this.

[0121] In addition, the copper busbar routing can also employ the RF voltage balancing circuit 80 described in any of the above embodiments.

[0122] Example 4 Based on the above embodiments, this embodiment provides a filter 50, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0123] Example 5 Based on the above embodiments, this embodiment provides a chuck 20, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0124] Example 6 Based on the above embodiments, this embodiment provides an upper electrode, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0125] Example 7 Based on the above embodiments, this embodiment provides an edge ring 1010, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0126] Example 8 Based on the above embodiments, this embodiment provides a temperature control link, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0127] Example 9 Based on the above embodiments, this embodiment provides a semiconductor chamber, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments.

[0128] Example 10 Based on the above embodiments, this embodiment provides a semiconductor device 1, including the radio frequency voltage balancing circuit 80 described in any of the above embodiments. The semiconductor device 1 is, for example, a deposition apparatus, an etching apparatus, or other plasma-related semiconductor device.

[0129] The above-described preferred embodiments have further illustrated the purpose, technical solutions, and advantages of this application. It should be understood that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A radio frequency voltage balancing circuit, characterized in that, This technology is applied to semiconductor devices, which include power supplies and power-consuming components; the power-consuming components include one or more of a chuck, an upper electrode, an edge ring, and a temperature control link. The radio frequency voltage balancing circuit includes at least two power supply loops and at least one filter circuit; each power supply loop includes two power supply links; each power supply link is used to connect the power-consuming component of the power-consuming part and the power supply, so that the power supply supplies power to the power-consuming component through the power supply loop formed by the power supply links; The electrical component is coupled with a radio frequency signal; Each filter circuit is used to allow the radio frequency signal to pass through while blocking the supply current, which is the current supplied by the power source to the electrical component via the power supply link; and At least two of the at least two power supply circuits satisfy the condition that at least one filter circuit is connected between the two power supply circuits.

2. The radio frequency voltage balancing circuit according to claim 1, characterized in that, In the RF voltage balancing circuit, 1 / 2 or more of the power supply links satisfy the condition that a filter circuit is connected between them and at least one other power supply link in the RF voltage balancing circuit (excluding itself).

3. The radio frequency voltage balancing circuit according to claim 2, characterized in that, Each power supply link in the radio frequency voltage balancing circuit satisfies the following condition: it is connected to at least one other power supply link in the radio frequency voltage balancing circuit besides itself by a filter circuit.

4. The radio frequency voltage balancing circuit according to any one of claims 1-3, characterized in that, At least one of the at least two power supply circuits satisfies the following condition: at least one filter circuit is connected between two power supply links belonging to the same power supply circuit.

5. The radio frequency voltage balancing circuit according to any one of claims 1-4, characterized in that, At least one power supply link is equipped with a filtering component, which is used to allow the power supply current to pass through and block the radio frequency signal from passing through; The connection node between the filter circuit and the power supply link is located between the filter component and the power-consuming element on the power supply link.

6. The radio frequency voltage balancing circuit according to any one of claims 1-4, characterized in that, At least one power supply link is provided with at least a first filter component and a second filter component. The first filter component is closer to the power-consuming component than the second filter component. Both the first filter component and the second filter component are used to allow the power supply current to pass through. The first filter component is also used to block the radio frequency signal with a frequency greater than a first threshold from passing through. The second filter component is also used to block the radio frequency signal with a frequency greater than a second threshold from passing through. The first threshold is greater than the second threshold. At least one filtering circuit includes one or more first filtering circuits and one or more second filtering circuits; the connection node of the first filtering circuit to the power supply link is disposed between the power-consuming element and the first filtering component, and the first filtering circuit is used to pass the radio frequency signal that is blocked by the first filtering component. The connection node between the second filtering circuit and the power supply link is located between the first filtering sub-component and the second filtering component. The second filtering circuit is used to pass the radio frequency signal that is blocked by the second filtering component.

7. The radio frequency voltage balancing circuit according to any one of claims 1-6, characterized in that, The withstand voltage of each filter circuit is greater than or equal to the maximum RF voltage difference between any two power supply links.

8. A radio frequency voltage balancing circuit, characterized in that, This technology is applied to semiconductor devices, which include power supplies and power-consuming components; the power-consuming components include one or more of a chuck, an upper electrode, an edge ring, and a temperature control link. The radio frequency voltage balancing circuit includes N power supply links and M filter circuits; the N power supply links are all used to connect the power-consuming components of the power-consuming parts and the power supply, so that the power supply supplies power to the power-consuming components through the N power supply links, and the power-consuming components are coupled with radio frequency signals, where N is an integer greater than or equal to 2; M is an integer greater than or equal to 1; Each filter circuit is used to allow the radio frequency signal to pass through while blocking the supply current, which is the current supplied by the power source to the electrical component via the power supply link; and At least one of the N power supply links satisfies the following condition: it is connected to at least one filter circuit with other power supply links in the RF voltage balancing circuit (excluding itself).

9. The radio frequency voltage balancing circuit according to claim 8, characterized in that, Of the N power supply links, N / 2 or more power supply links satisfy the condition that they are connected to at least one other power supply link (excluding themselves) among the N power supply links by a filter circuit.

10. The radio frequency voltage balancing circuit according to claim 8 or 9, characterized in that, Each of the N power supply links satisfies the following condition: it is connected to at least one other power supply link among the N power supply links (excluding itself) by a filter circuit.

11. The radio frequency voltage balancing circuit according to any one of claims 8-10, characterized in that, At least one power supply link is equipped with a filtering component, which is used to allow the power supply current to pass through and block the radio frequency signal from passing through; The connection node between the filter circuit and the power supply link is located between the filter component and the power-consuming element on the power supply link.

12. The radio frequency voltage balancing circuit according to any one of claims 8-10, characterized in that, At least one power supply link is provided with at least a first filter component and a second filter component. The first filter component is closer to the power-consuming component than the second filter component. Both the first filter component and the second filter component are used to allow the power supply current to pass through. The first filter component is also used to block the radio frequency signal with a frequency greater than a first threshold from passing through. The second filter component is also used to block the radio frequency signal with a frequency greater than a second threshold from passing through. The first threshold is greater than the second threshold. M filtering circuits include one or more first filtering circuits and one or more second filtering circuits; the connection node of the first filtering circuit to the power supply link is disposed between the power-consuming component and the first filtering component; the first filtering circuit is used to pass the radio frequency signal that is blocked by the first filtering component. The connection node between the second filtering circuit and the power supply link is located between the first filtering sub-component and the second filtering component. The second filtering circuit is used to pass the radio frequency signal that is blocked by the second filtering component.

13. The radio frequency voltage balancing circuit according to any one of claims 8-12, characterized in that, The withstand voltage of each filter circuit is greater than or equal to the maximum RF voltage difference between any two power supply links among the N power supply links.

14. A filter, characterized in that, Includes the radio frequency voltage balancing circuit as described in any one of claims 1-13.

15. A chuck, characterized in that, Includes the radio frequency voltage balancing circuit as described in any one of claims 1-13.

16. An upper electrode, characterized in that, Includes the radio frequency voltage balancing circuit as described in any one of claims 1-13.

17. A semiconductor device, characterized in that, Includes the radio frequency voltage balancing circuit as described in any one of claims 1-13.

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