Epitaxial wafer structure and preparation method thereof
By doping an aluminum gallium nitride layer with indium in the buffer layer of the epitaxial wafer structure, the growth temperature is reduced to 700-850 degrees Celsius, which solves the problem of substrate loss in the epitaxial structure and improves the quality of the epitaxial wafer structure and the high-frequency signal transmission performance.
CN122373426APending Publication Date: 2026-07-10HUNAN SANAN SEMICON CO LTD
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Patent Information
- Application Number
- CN202411996698.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-07-10
AI Technical Summary
Technical Problem
The epitaxial structures prepared in the prior art suffer from substrate loss, which affects the transmission of high-frequency signals and leads to a decline in the quality of the epitaxial structure.
Method used
An aluminum gallium nitride layer doped with indium is used in the buffer layer, and the growth temperature is controlled at 700-850 degrees Celsius. The substrate loss is reduced by lattice matching, thereby improving the quality of the epitaxial wafer structure.
Benefits of technology
It effectively reduces substrate loss in epitaxial wafer structures, improving the quality of epitaxial wafer structures and high-frequency signal transmission performance.
✦ Generated by Eureka AI based on patent content.
Abstract
The embodiment of the invention relates to an epitaxial wafer structure and a preparation method thereof. The epitaxial wafer structure comprises a silicon-based substrate layer; the nucleating layer is arranged on the silicon-based substrate layer, and the nucleating layer comprises an aluminum nitride layer; the buffer layer is arranged on the nucleating layer, and the buffer layer comprises an indium-doped aluminum gallium nitride layer; the gallium nitride channel layer is arranged on the buffer layer; and the aluminum gallium nitride barrier layer is arranged above the gallium nitride channel layer. According to the embodiment of the invention, the buffer layer is doped with indium, so that the substrate of the epitaxial wafer structure cannot be lost, the defects of the epitaxial layer can be reduced, and the quality of the epitaxial wafer structure is improved.
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