A wide bandgap photodiode array and high voltage photodiode array structure

Abstract

The application provides a wide-bandgap photodiode array and a high-voltage photosensitive diode array structure, and relates to the technical field of photodiodes. The application provides a wide-bandgap photodiode array and a high-voltage photosensitive diode array structure, and relates to the technical field of photodiodes. The beneficial effect is that the photodiode unit adopts a wide-bandgap active layer, relies on the intrinsic characteristics of the wide-bandgap material, and can generate a photo-generated voltage much higher than that of a conventional silicon-based device. Only a few photodiode units in series can obtain a photo-generated voltage meeting the high-voltage application requirement, the number of units in series in the array is greatly reduced, the overall structure design of the photodiode array is simplified, and the photoelectric conversion efficiency and current output capacity of the entire array are effectively improved.

Description

Technical Field

[0001] This invention relates to the field of photodiode technology, and in particular to a wide bandgap photodiode array and a high voltage photodiode array structure. Background Technology

[0002] As a core component for optical signal reception and photoelectric conversion, photodiode arrays are widely used in high-voltage optocouplers, optical communications, photoelectric detection, and many other fields. Their photoelectric conversion efficiency, high-voltage output capability, and integration adaptability directly determine the overall performance of the equipment. In high-voltage applications, photodiode arrays must possess high photogenerated voltage and high photogenerated current output characteristics, while also requiring a compact structure and strong process adaptability. Therefore, stringent requirements are placed on the material selection, structural design, and manufacturing process of photodiode arrays.

[0003] In existing technologies, photodiode arrays are mostly fabricated using silicon-based materials. Due to the limitations of the transmitting devices, silicon-based photodiode arrays require the use of thick-film SOI (Silicon-on-Instrument) technology for processing, which severely restricts the range of available process technologies. This makes it difficult to improve device performance through process optimization, and also hinders its industrialization and cost control. Furthermore, silicon has significant inherent physical defects; its bandgap is only about 1.2V, meaning that a single silicon-based photodiode unit can only generate a photovoltage of 0.6-0.7V. In high-voltage applications, dozens of silicon-based photodiode units must be connected in series to meet high-voltage output requirements. However, during series connection, the inherent performance inconsistencies of each silicon-based diode unit require customized structural design for each unit to balance these inconsistencies, significantly increasing the design complexity and manufacturing difficulty of the device, and reducing production yield. Furthermore, silicon is an indirect bandgap material, and its photoelectric conversion process requires the participation of phonons. The photon energy loss is large, and the generation and transport efficiency of electron-hole pairs is low, resulting in a photoelectric quantum efficiency that is much lower than that of direct bandgap materials. The photogenerated current output capability is insufficient, which cannot meet the high current and high efficiency photoelectric conversion requirements under high voltage scenarios.

[0004] In summary, existing silicon-based photodiode arrays suffer from numerous problems, including limited process options, difficulty in achieving high voltage, high design complexity, and low photoelectric conversion efficiency. They are no longer suitable for the high-performance, high-integration, and high-stability requirements of the high-voltage photoelectric conversion field. Therefore, developing a photodiode array with strong process adaptability, easy high-voltage output, and high photoelectric conversion efficiency has become an urgent technical problem to be solved in this field. Summary of the Invention

[0005] To address the problems existing in the prior art, the present invention provides a wide bandgap photodiode array, including an insulating light-transmitting substrate and a plurality of photodiode units formed on the insulating light-transmitting substrate. Each photodiode unit includes a wide bandgap active layer and positive and negative electrodes formed on the wide bandgap active layer. The positive and negative electrodes of each photodiode unit are connected in series to form an array structure.

[0006] Preferably, each of the photodiode units is a discrete photodiode device, which is formed by external circuit encapsulation and series connection.

[0007] Preferably, the discrete photodiode device has a planar structure, and its positive and negative electrodes are both formed at the top edge of the wide bandgap active layer; The wide bandgap active layer of each of the discrete photodiode devices is formed directly on the insulating light-transmitting substrate, and the wide bandgap active layers of adjacent discrete photodiode devices are not in contact.

[0008] Preferably, the discrete photodiode device has a vertical structure, with its positive electrode formed on the top layer of the wide bandgap active layer and its negative electrode formed on the bottom layer of the wide bandgap active layer; The negative electrode of each of the discrete photodiode devices is formed directly on the insulating light-transmitting substrate, and the negative electrodes of adjacent discrete photodiode devices do not contact each other.

[0009] Preferably, the array structure is a single-chip integrated structure, and each photodiode unit is electrically connected through a series circuit integrated inside the chip.

[0010] Preferably, the wide bandgap active layer of the single integrated structure is integrally deposited on the insulating light-transmitting substrate; The integrally formed wide bandgap active layer is semi-etched to form multiple trench partitions, each of which divides the wide bandgap active layer into several mutually isolated island-shaped regions; The positive electrode of each photodiode unit is formed on the top layer of the corresponding island region, and the negative electrode is led out from the unetched area at the bottom of the wide bandgap active layer to the top layer via a pickup process and connected to the top layer positive electrode of the adjacent photodiode unit through a metal wiring circuit.

[0011] Preferably, the groove partition is filled with an isolation medium.

[0012] Preferably, the wide bandgap active layer of the single integrated structure is a one-piece molded structure; The integrally formed wide bandgap active layer is completely etched away to form multiple independent island-shaped active layers; The positive electrode of each photodiode unit is formed on the top layer of the corresponding island-shaped active layer, and the negative electrode is led out from the bottom of the island-shaped active layer to the top layer through a packaging lead process and connected to the top positive electrode of the adjacent photodiode unit through a metal wiring circuit. The two adjacent island-shaped active layers are isolated from each other by an isolation medium.

[0013] Preferably, an insulating protective layer is formed on the side of the negative electrode.

[0014] Preferably, a heavily doped ohmic contact layer is formed on the top layer of the wide bandgap active layer.

[0015] The present invention also provides a high-voltage photodiode array structure, wherein the photoelectric conversion unit of the high-voltage photodiode array structure adopts the above-mentioned wide bandgap photodiode array.

[0016] The above technical solution has the following advantages or beneficial effects: 1) The photodiode unit adopts a wide bandgap active layer. Relying on the intrinsic properties of the wide bandgap material, a single photodiode unit can generate a photovoltage that is much higher than that of traditional silicon-based devices. Only a few photodiode units need to be connected in series to obtain a photovoltage that meets the requirements of high voltage applications, which greatly reduces the number of units connected in series in the array and simplifies the overall structural design of the photodiode array.

[0017] 2) Wide bandgap materials are direct bandgap materials, and their photoelectric conversion process does not require the participation of phonons. They have high photon energy utilization, significantly improve the generation and transport efficiency of electron-hole pairs, and greatly improve photoelectric quantum efficiency. This enables a single photodiode unit to generate extremely high photocurrent, effectively improving the photoelectric conversion efficiency and current output capability of the entire array. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a wide bandgap photodiode array in Embodiment 1 of the present invention; Figure 2 This is a schematic diagram of the wide bandgap photodiode array in Embodiment 2 of the present invention; Figure 3 This is a schematic diagram of the wide bandgap photodiode array in Embodiment 3 of the present invention; Figure 4 This is a schematic diagram of the structure of a wide bandgap photodiode array in Embodiment 4 of the present invention. Detailed Implementation

[0019] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. The present invention is not limited to this embodiment; other embodiments that conform to the spirit of the present invention may also fall within the scope of the present invention.

[0020] In a preferred embodiment of the present invention, based on the aforementioned problems existing in the prior art, a wide bandgap photodiode array is provided. This array achieves high-voltage, high-current photovoltaic effect output by combining the intrinsic properties of wide bandgap materials with diverse structural designs, while simultaneously ensuring device integration and stability. The wide bandgap photodiode array includes an insulating transparent substrate and a plurality of photodiode units formed on the substrate. Each photodiode unit includes a wide bandgap active layer and positive and negative electrodes formed on the active layer. The positive and negative electrodes of each photodiode unit are connected in series to form an array structure.

[0021] The wide-bandgap active layer is fabricated using a wide-bandgap direct bandgap semiconductor material. Leveraging the intrinsic properties of this material, a single photodiode unit can generate a photovoltage far exceeding that of traditional silicon-based devices. Only a few units need to be connected in series to meet the voltage requirements of high-voltage applications. Simultaneously, the photoelectric conversion process of the direct bandgap material does not require phonon participation, resulting in high photon energy utilization, significantly improved electron-hole pair generation and transport efficiency, and a substantial increase in photoelectric quantum efficiency. This allows a single photodiode unit to generate a highly efficient photocurrent, effectively enhancing the overall photoelectric conversion performance of the array. The insulating, transparent substrate serves as the base, providing stable mechanical support for each layer while ensuring lossless penetration of incident photons to the wide-bandgap active layer. This avoids substrate shading affecting light absorption efficiency, perfectly meeting the core application requirements of photodiode receivers.

[0022] Furthermore, each photodiode unit is connected in series with its positive and negative electrodes to form an array structure. The series effect is used to achieve the superposition of photogenerated voltages, thereby obtaining an output voltage that meets the requirements of high-voltage operating conditions. Compared with traditional silicon-based photodiode arrays, the number of units connected in series is greatly reduced, simplifying the overall structural design and manufacturing process of the array.

[0023] Based on the above design, the present invention provides multiple embodiments, namely two main types: external circuit series connection of discrete photodiode devices and internal series connection of a single integrated structure chip. The discrete structure is further divided into planar structure and vertical structure, while the single integrated structure corresponds to two designs: half etching of thin film active layer and full etching of thick film active layer. Each embodiment can be flexibly selected according to the power, integration degree, installation space and other requirements of the actual application scenario. The following describes each embodiment in detail.

[0024] Example 1 In this embodiment, as Figure 1 As shown, each photodiode unit is a discrete photodiode device, which is formed by connecting it in series through an external circuit package.

[0025] In this embodiment, the discrete photodiode device has a planar structure, with its positive electrode 1 and negative electrode 2 both formed on the top edge of the wide bandgap active layer 3. This design places the positive and negative electrodes on the same plane, which facilitates the wiring and electrical connection of external circuits. At the same time, placing the electrodes on the top edge can effectively avoid the core light-receiving area of ​​the wide bandgap active layer 3, preventing the electrodes from blocking light and affecting photon absorption, and ensuring the photoelectric conversion efficiency of the wide bandgap active layer.

[0026] The wide bandgap active layer 3 of each discrete photodiode device is directly formed on the insulating transparent substrate 4. The wide bandgap active layer 3 is made of a wide bandgap direct bandgap semiconductor material and is integrally formed on the surface of the insulating transparent substrate 4 through continuous epitaxial / deposition process, which ensures the bonding stability between the active layer and the substrate and reduces interlayer contact loss. The wide bandgap active layers 3 of adjacent discrete photodiode devices do not contact each other, forming a natural physical isolation, avoiding charge crosstalk and leakage between units, and improving the electrical stability of the array.

[0027] In this embodiment, a heavily doped ohmic contact layer 7 is formed on the top layer of the wide bandgap active layer 3, the contact area between the positive and negative electrodes and the active layer. The heavily doped ohmic contact layer 7 precisely covers the bonding area between the electrode and the active layer, effectively reducing the surface contact resistance between the electrode and the active layer in the planar structure, ensuring that photogenerated electrons and holes can be led out from the active layer to the positive and negative electrodes without loss, and further improving the transmission efficiency of photogenerated current.

[0028] In this embodiment, during the packaging process, the positive and negative terminals of the top layer of each planar structure device are connected in series sequentially through an external metal wiring circuit. The wiring of the external circuit avoids the light-receiving surface of each device throughout the entire process, and the resistance of the external circuit matches the current output characteristics of the wide bandgap device, ensuring efficient conduction of photogenerated charges with no significant energy loss.

[0029] The planar structure design of this embodiment is simple in process and low in manufacturing difficulty, suitable for wafer-level mass production, and the external series connection method is highly flexible. The number of series devices can be flexibly adjusted according to the actual high voltage requirements, making it suitable for application scenarios with moderate integration requirements and flexible adaptation to different voltage requirements.

[0030] Example 2 In this embodiment, as Figure 2 As shown, the discrete photodiode device has a vertical structure. Its positive electrode 1 is formed on the top layer of the wide bandgap active layer 3, and its negative electrode 2 is formed on the bottom layer of the wide bandgap active layer 3. The positive and negative electrodes are vertically distributed along the longitudinal direction of the wide bandgap active layer 3. This design extends the charge transmission path along the thickness direction of the device, resulting in a shorter transmission distance and lower carrier recombination loss. This can further improve the output efficiency of the photogenerated current and meet the photoelectric conversion requirements of high power and high current.

[0031] The negative electrode 2 of each discrete photodiode device is directly formed on the insulating transparent substrate 4, so that the negative electrode and the substrate form a stable electrical connection, ensuring efficient collection and export of electrons; and the negative electrodes 2 of adjacent discrete photodiode devices do not contact each other, avoiding longitudinal leakage between units. At the same time, with the physical isolation between the wide bandgap active layers, the devices are fully independent, greatly reducing the parasitic effects between units.

[0032] In this embodiment, a heavily doped ohmic contact layer 7 is formed in the top positive electrode contact region of the wide bandgap active layer 3. The heavily doped ohmic contact layer 7 ensures efficient hole transport from the active layer to the positive electrode, further enhancing the output capability of the photogenerated current.

[0033] In this embodiment, during the packaging process, the bottom negative electrode 2 of each vertical structure device is led out from the insulating light-transmitting substrate 4 through an external circuit, and then electrically connected to the top positive electrode 1 of the adjacent device to complete the series connection of all devices. The leads and wiring of the external circuit are all insulated to prevent accidental contact with the substrate or active layer.

[0034] The vertical structure design of this embodiment has the advantages of high photocurrent generation and low transmission loss, and is suitable for high-voltage and high-power photoelectric conversion scenarios, such as high-voltage optocouplers and high-power photodetectors.

[0035] Example 3 In this embodiment, as Figure 3 As shown, the array structure is a single-chip integrated structure. Each photodiode unit is electrically connected through a series circuit integrated inside the chip, eliminating the need for external circuits and achieving higher integration.

[0036] In this embodiment, the wide bandgap active layer 3 of the entire array is a monolithic structure, which is directly deposited on the insulating light-transmitting substrate 4 through a continuous epitaxial / deposition process, ensuring the material uniformity and structural consistency of the active layer. Each photodiode unit is formed by dividing the same monolithic wide bandgap active layer 3, which effectively improves the performance consistency of each unit and avoids the performance differences between devices in a discrete structure.

[0037] The integrally formed wide bandgap active layer is etched using a semi-etching process to form multiple trench partitions. Each trench partition is evenly distributed on the wide bandgap active layer 3, dividing the entire wide bandgap active layer 3 into several isolated island-shaped regions. Each island-shaped region is an independent photodiode unit. The etching depth of the semi-etching process stops inside the wide bandgap active layer 3, without cutting off the bottom of the bonding between the wide bandgap active layer 3 and the insulating light-transmitting substrate 4, thus preserving the continuous area at the bottom of the active layer and providing a complete electrical conduction path for the lead-out of the negative electrode 2.

[0038] Preferably, the trench partition is filled with an isolation medium 5. The isolation medium 5 is a highly insulating inorganic dielectric material, such as silicon oxide or silicon nitride. By filling with the isolation medium 5, the physical isolation and electrical insulation performance between each island region (photodiode unit) is further improved, the lateral leakage between units is completely blocked, and the trench structure is fixed to improve the mechanical stability of the active layer.

[0039] The positive electrode 1 of each photodiode unit is formed on the top layer of the corresponding island region, and the positive electrode 1 is located at the edge of the top layer of the island region, avoiding the core light-receiving surface; the negative electrode 2 of the photodiode unit is led out from the unetched area at the bottom of the wide bandgap active layer 3 to the top layer through the pick-up process. The pick-up process uses vertical via combined with metal wiring to ensure the electrical continuity of the negative electrode lead-out and to eliminate conduction loss.

[0040] The negative electrode 2, which is led out to the top layer, is electrically connected to the positive electrode 1 of the top layer of the adjacent photodiode unit through the metal wiring circuit integrated inside the chip. All photodiode units are connected in series through the metal wiring circuit to form a complete single integrated array. The metal wiring circuit is formed on the top surface of the wide bandgap active layer 3 and avoids the light-receiving area of ​​each unit throughout, so as not to affect photon absorption.

[0041] Preferably, an insulating protective layer 6 is formed on the side of the negative electrode 2. The insulating protective layer 6 is made of a highly insulating material that is compatible with the isolation medium in the trench partition. It is deposited on the side and edge area of ​​the negative electrode metal wiring to precisely block the non-functional contact between the negative electrode metal electrode and the wide bandgap active layer, avoid edge leakage and charge loss under high voltage conditions, and protect the metal wiring circuit and improve the long-term working stability of the array.

[0042] Preferably, a heavily doped ohmic contact layer 7 is formed on the top layer of the wide bandgap active layer 3. The heavily doped ohmic contact layer 7 is formed in the contact area between the electrode and the wide bandgap active layer 3. The doping type is adapted to the electrical properties of the corresponding electrode. The contact resistance between the electrode and the active layer is greatly reduced by the heavy doping treatment, which ensures the efficient transmission of photogenerated charge between the electrode and the active layer, avoids current loss caused by contact resistance, and further improves the photoelectric conversion efficiency of the array.

[0043] The single-chip integrated thin-film structure design in this embodiment has high integration and small device size, making it suitable for miniaturized, high-density integration scenarios with strict requirements for installation space. Furthermore, the semi-etching process preserves the continuity of the bottom of the active layer, with moderate process difficulty and high wafer-level mass production yield.

[0044] Example 4 This embodiment is a single-chip integrated thick-film active layer fully etched wide bandgap photodiode array. It is a single-chip integrated structure, the same as embodiment 3. The core difference is the etching method of the wide bandgap active layer, which is suitable for higher power and higher current application requirements.

[0045] In this embodiment, as Figure 4 As shown, the wide bandgap active layer 3 is also a one-piece structure. The one-piece thick film wide bandgap active layer 3 is etched using a full etching process to form multiple independent island-shaped active layers. Each island-shaped active layer is an independent photodiode unit. The full etching process completely etches the thick film active layer to the bonding surface with the insulating light-transmitting substrate 4, so that each island-shaped active layer is completely physically separated. With the subsequent isolation design, the complete independence of each unit is achieved, which greatly reduces the parasitic effects and leakage risks between units.

[0046] Adjacent island-shaped active layers are isolated from each other by an isolation medium 5. The isolation medium 5 fills the gaps between each island-shaped active layer. It is made of an inorganic dielectric material with high insulation and high adhesion, which not only achieves electrical insulation, but also provides support for the independent island-shaped active layers, thereby improving the stability of the overall structure.

[0047] The positive electrode 1 of each photodiode unit is formed at the top edge of the corresponding island-shaped active layer, avoiding the core light-receiving surface. Since the wide bandgap active layer 3 is completely etched away, there is no continuous electrical conduction path at the bottom of each unit. Therefore, the negative electrode 2 of the unit is led out from the bottom of the island-shaped active layer to the top layer through the packaging lead process. The packaging lead process uses metal leads and electrode pads to ensure that the negative electrode 2 is efficiently led out from the bottom to the top layer without significant charge loss.

[0048] In this embodiment, the positive electrode contact area of ​​the top layer of the island-shaped active layer, the negative electrode contact area of ​​the bottom layer, and the connection area between the top layer packaging lead and the active layer are all formed with heavily doped ohmic contact layers 7. In view of the characteristic of the thick film active layer having a lot of photogenerated charge, the electrode contact resistance is further reduced to ensure that the large current can be conducted from the active layer to the positive and negative electrodes without loss, and to avoid circuit heating and energy loss caused by contact resistance.

[0049] The negative electrode 2, which is led out to the top layer, is electrically connected to the positive electrode 1 of the top layer of the adjacent photodiode unit through the metal wiring circuit integrated inside the chip. All photodiode units are connected in series through the metal wiring circuit to form a single integrated array. The metal wiring circuit is formed on the top surface of the insulating light-transmitting substrate 4, avoiding the light-receiving area of ​​each island-shaped active layer. At the same time, the wire diameter of the metal wiring circuit matches the high current output characteristics of the thick film active layer, avoiding line heating and energy loss during high current transmission.

[0050] Preferably, an insulating protective layer 6 is also formed on the side of the negative electrode 2. The insulating protective layer 6 blocks the non-functional contact between the negative electrode metal electrode and the active layer. Together with the heavily doped ohmic contact layer 7, it ensures the working stability and photoelectric conversion efficiency of the array under high voltage and high current conditions.

[0051] The single-chip integrated thick-film structure design in this embodiment has high light absorption efficiency and strong photocurrent output capability. Moreover, the high integration of the single-chip integrated structure makes it suitable for high-voltage, high-power, and miniaturized high-end photoelectric conversion scenarios, such as precision high-voltage photoelectric detection and high-end optical communication equipment.

[0052] In the above embodiments, the wide bandgap active layer 3 can preferably be a GaN-based multilayer doped structure, formed by stacking 20 to 30 layers of GaN materials with different doping types. The overall thickness of the active layer is in the micrometer range and can be adjusted to several micrometers to tens of micrometers according to the design requirements of thin film / thick film. As a typical wide bandgap direct bandgap semiconductor material, GaN-based material has advantages such as high breakdown voltage, high photoelectric quantum efficiency, and good epitaxial characteristics, which can give full play to the technical effects of the present invention. The insulating and transparent substrate 4 can preferably be a sapphire transparent substrate. The sapphire substrate has high insulation, high light transmittance, good thermal stability and mechanical stability, and good epitaxial adhesion with GaN-based material, making it a preferred substrate for wide bandgap photodiode arrays.

[0053] This invention also provides a high-voltage photodiode array structure, wherein the photoelectric conversion unit of the high-voltage photodiode array structure adopts the aforementioned wide-bandgap photodiode array. Specifically, the high-voltage photodiode array structure is either a PVG (PhotoVoltage Generator) or a PDA (PhotoDiode Array).

[0054] The above description is merely a preferred embodiment of the present invention and does not limit the implementation and protection scope of the present invention. Those skilled in the art should realize that any equivalent substitutions and obvious changes made using the content of this specification and illustrations should be included within the protection scope of the present invention.

Claims

1. A wide bandgap photodiode array, characterized in that, The device includes an insulating light-transmitting substrate and a plurality of photodiode units formed on the insulating light-transmitting substrate. Each photodiode unit includes a wide bandgap active layer and positive and negative electrodes formed on the wide bandgap active layer. The positive and negative electrodes of each photodiode unit are connected in series to form an array structure.

2. The wide bandgap photodiode array according to claim 1, characterized in that, Each of the aforementioned photodiode units is a discrete photodiode device, which is formed by connecting it in series through an external circuit package.

3. The wide bandgap photodiode array according to claim 2, characterized in that, The discrete photodiode device has a planar structure, and its positive and negative electrodes are both formed on the top edge of the wide bandgap active layer. The wide bandgap active layer of each of the discrete photodiode devices is formed directly on the insulating light-transmitting substrate, and the wide bandgap active layers of adjacent discrete photodiode devices are not in contact.

4. The wide bandgap photodiode array according to claim 2, characterized in that, The discrete photodiode device has a vertical structure, with its positive electrode formed on the top layer of the wide bandgap active layer and its negative electrode formed on the bottom layer of the wide bandgap active layer; The negative electrode of each of the discrete photodiode devices is formed directly on the insulating light-transmitting substrate, and the negative electrodes of adjacent discrete photodiode devices do not contact each other.

5. The wide bandgap photodiode array according to claim 1, characterized in that, The array structure is a single-chip integrated structure, and each photodiode unit is electrically connected through a series circuit integrated inside the chip.

6. The wide bandgap photodiode array according to claim 5, characterized in that, The wide bandgap active layer of the single integrated structure is integrally deposited on the insulating light-transmitting substrate; The integrally formed wide bandgap active layer is semi-etched to form multiple trench partitions, each of which divides the wide bandgap active layer into several mutually isolated island-shaped regions; The positive electrode of each photodiode unit is formed on the top layer of the corresponding island region, and the negative electrode is led out from the unetched area at the bottom of the wide bandgap active layer to the top layer via a pick-up process and connected to the top layer positive electrode of the adjacent photodiode unit through a metal wiring circuit.

7. The wide bandgap photodiode array according to claim 6, characterized in that, The groove partition is filled with an isolation medium.

8. The wide bandgap photodiode array according to claim 5, characterized in that, The wide bandgap active layer of the single-core integrated structure is a one-piece molded structure; The integrally formed wide bandgap active layer is completely etched away to form multiple independent island-shaped active layers; The positive electrode of each photodiode unit is formed on the top layer of the corresponding island-shaped active layer, and the negative electrode is led out from the bottom of the island-shaped active layer to the top layer through a packaging lead process and connected to the top positive electrode of the adjacent photodiode unit through a metal wiring circuit. The two adjacent island-shaped active layers are isolated from each other by an isolation medium.

9. The wide bandgap photodiode array according to claim 6 or 8, characterized in that, An insulating protective layer is formed on the side of the negative electrode.

10. The wide bandgap photodiode array according to claim 1, characterized in that, The top layer of the wide bandgap active layer is formed with a heavily doped ohmic contact layer.

11. A high-voltage photodiode array structure, characterized in that, The photoelectric conversion unit of the high-voltage photodiode array structure adopts the wide bandgap photodiode array as described in any one of claims 1-10.

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