Detection device

Abstract

The present application provides a detection device capable of improving the utilization efficiency of light. The detection device has: a substrate; a plurality of photodiodes provided on the substrate; a plurality of transistors corresponding to the plurality of photodiodes respectively; a plurality of gate lines extending along a first direction; a plurality of signal lines extending along a second direction intersecting the first direction; a plurality of lower electrodes provided between the transistors and the photodiodes in a direction perpendicular to the substrate, and corresponding to the plurality of photodiodes respectively; an upper electrode provided across the plurality of photodiodes; and a reflective layer provided between the substrate and the photodiodes in the direction perpendicular to the substrate. The lower electrode has an area smaller than an area divided by the plurality of gate lines and the plurality of signal lines, and the reflective layer is provided between adjacent lower electrodes when viewed from above.

Description

Technical Field

[0001] This invention relates to a detection device. Background Technology

[0002] Optical sensors capable of detecting fingerprint patterns and vein patterns are known (e.g., Patent Document 1). Such optical sensors have multiple photodiodes using an organic semiconductor material as the active layer. The photodiodes are disposed between a lower electrode and an upper electrode.

[0003] Patent Document 1: Japanese Patent Application Publication No. 2009-32005 Summary of the Invention

[0004] The technical problem that the invention aims to solve

[0005] By thinning the active layer of the photodiode, the sensor capacitance formed between the lower and upper electrodes can be increased. The charge generated when light is irradiated onto the photodiode is stored in the sensor capacitance. On the other hand, if the active layer of the photodiode is thinned, the amount of light that can be absorbed by the photodiode when it is irradiated decreases, potentially reducing light utilization efficiency.

[0006] The purpose of this invention is to provide a detection device that can improve the efficiency of light utilization.

[0007] Solutions for solving technical problems

[0008] One aspect of the detection device of the present invention includes: a substrate; a plurality of photodiodes disposed on the substrate; a plurality of transistors disposed corresponding to the plurality of photodiodes; a plurality of gate lines extending along a first direction; a plurality of signal lines extending along a second direction intersecting the first direction; a plurality of lower electrodes disposed between the transistors and the photodiodes in a direction perpendicular to the substrate, and disposed corresponding to the plurality of photodiodes; an upper electrode disposed across the plurality of photodiodes; and a reflective layer disposed between the substrate and the photodiodes in a direction perpendicular to the substrate, wherein the lower electrodes have an area smaller than the area divided by the plurality of gate lines and the plurality of signal lines, and the reflective layer is disposed between adjacent lower electrodes when viewed from above. Attached Figure Description

[0009] Figure 1 This is a top view showing the detection device according to the first embodiment.

[0010] Figure 2 This is a cross-sectional view showing the schematic cross-sectional structure of the detection device according to the first embodiment.

[0011] Figure 3This is a block diagram illustrating a structural example of the detection device according to the first embodiment.

[0012] Figure 4 This is a circuit diagram representing the detection device.

[0013] Figure 5 It is a circuit diagram representing multiple detection elements.

[0014] Figure 6 This is a schematic top view of the detection device according to the first embodiment.

[0015] Figure 7 yes Figure 6 Sectional view of VII-VII'.

[0016] Figure 8 It is a cross-sectional view schematically showing the cross-section of the detection device according to the second embodiment.

[0017] Figure 9 This is a cross-sectional view schematically showing the detection device involved in a variation of the second embodiment.

[0018] Figure 10 This is a schematic top view of the detection device according to the third embodiment.

[0019] Figure 11 yes Figure 10 XI-XI' sectional view.

[0020] Figure 12 This is a schematic top view of the detection device according to the fourth embodiment.

[0021] Figure 13 yes Figure 12 Sectional view of XIII-XIII'.

[0022] Figure 14 This is a cross-sectional view schematically showing the cross-section of the detection device according to the fifth embodiment.

[0023] Figure 15 This is a cross-sectional view showing the schematic cross-sectional structure of the detection device according to the sixth embodiment.

[0024] Explanation of reference numerals in the attached figures

[0025] 1, 1A, 1B, 1C, 1D, 1E: Detection device; 10: Sensor unit; 11: Detection control unit; 15: Gate line drive circuit; 16: Signal line selection circuit; 21: Substrate; 23: Lower electrode; 24: Upper electrode; 25, 25a, 25b, 25c, 25d, 25e: Reflective layer; 40: Detection unit; 48: Detection circuit; 61: Semiconductor layer; 62: Source electrode; 63: Drain electrode; 64: Gate electrode; 65: Bottom gate electrode; 94: Organic insulating film; 95: Inorganic insulating film; CH1: First contact hole; PD: Photodiode; AA: Detection area; GA: Peripheral area; GCL: Gate line; SGL: Signal line; Tr: First switching element. Detailed Implementation

[0026] The embodiments for carrying out the present invention will be described in detail with reference to the accompanying drawings. This disclosure is not limited to the contents described in the following embodiments. Furthermore, the structural elements described below include elements readily conceived by those skilled in the art, and substantially the same elements. Moreover, the structural elements described below can be appropriately combined. In addition, this disclosure is merely an example, and contents readily conceived by those skilled in the art with respect to appropriate modifications that maintain the spirit of this disclosure are naturally included within the scope of this disclosure. Furthermore, in order to make the description clearer, the drawings may schematically show the width, thickness, shape, etc., of various parts compared to the actual embodiments; however, this is merely an example and does not limit the interpretation of this disclosure. Additionally, in this disclosure and the various figures, sometimes the same reference numerals are used for elements that are the same as those previously described with respect to previously seen figures, and detailed descriptions are appropriately omitted.

[0027] In this specification and claims, when referring to the arrangement of other structures on top of a certain structure, the use of the word "on" alone, unless otherwise specified, includes both the case of arranging other structures directly above a certain structure in connection with it, and the case of arranging other structures above a certain structure via another structure.

[0028] (First Implementation)

[0029] Figure 1 This is a top view showing the detection device according to the first embodiment. For example... Figure 1 As shown, the detection device 1 includes a substrate 21, a sensor unit 10, a gate line driving circuit 15, a signal line selection circuit 16, a detection circuit 48, a control circuit 122, a power supply circuit 123, a first light source substrate 51, a second light source substrate 52, a first light source 53, and a second light source 54. A plurality of first light sources 53 are provided on the first light source substrate 51. A plurality of second light sources 54 are provided on the second light source substrate 52.

[0030] The control board 121 is electrically connected to the board 21 via the wiring board 71. The wiring board 71 is, for example, a flexible printed circuit board or a rigid board. A detection circuit 48 is provided on the wiring board 71. The control board 121 is provided with a control circuit 122 and a power supply circuit 123. The control circuit 122 is, for example, an FPGA (Field Programmable Gate Array). The control circuit 122 supplies control signals to the sensor unit 10, the gate line driving circuit 15, and the signal line selection circuit 16 to control the detection operation of the sensor unit 10. In addition, the control circuit 122 supplies control signals to the first light source 53 and the second light source 54 to control the lighting or delighting of the first light source 53 and the second light source 54. The power supply circuit 123 transmits the sensor power signal VDDSNS (refer to...) to the sensor power supply circuit 123. Figure 5 The voltage signal is supplied to the sensor unit 10, the gate line drive circuit 15, and the signal line selection circuit 16. In addition, the power supply circuit 123 supplies power voltage to the first light source 53 and the second light source 54.

[0031] The substrate 21 has a detection area AA and a peripheral area GA. The detection area AA is provided with a plurality of photodiodes PD (see reference 10) that are present in the sensor section 10. Figure 5 The peripheral area GA is the area between the outer periphery of the detection area AA and the outer edge of the substrate 21, and is the area where multiple photodiodes PD are not disposed.

[0032] The gate line driving circuit 15 and the signal line selection circuit 16 are disposed in the peripheral region GA. Specifically, the gate line driving circuit 15 is disposed in the region of the peripheral region GA that extends along the second direction Dy. The signal line selection circuit 16 is disposed in the region of the peripheral region GA that extends along the first direction Dx, and is disposed between the sensor section 10 and the detection circuit 48.

[0033] Furthermore, in the following description, the first direction Dx is a direction within a plane parallel to the substrate 21. The second direction Dy is a direction within a plane parallel to the substrate 21, and is orthogonal to the first direction Dx. Alternatively, the second direction Dy may not intersect the first direction Dx orthogonally. Additionally, "top view" refers to the positional relationship when viewed from a direction perpendicular to the substrate 21.

[0034] A plurality of first light sources 53 are disposed on a first light source substrate 51 and arranged along a second direction Dy. A plurality of second light sources 54 are disposed on a second light source substrate 52 and arranged along a second direction Dy. The first light source substrate 51 and the second light source substrate 52 are electrically connected to the control circuit 122 and the power supply circuit 123 respectively via terminal portions 124 and 125 disposed on the control board 121.

[0035] Multiple first light sources 53 and multiple second light sources 54, such as inorganic LEDs (Light Emitting Diodes) and organic ELs (Organic Light Emitting Diodes), emit first light and second light of different wavelengths respectively.

[0036] The first light emitted from the first light source 53 is mainly reflected by the surface of the object being detected, such as a finger, and then enters the sensor unit 10. Thus, the sensor unit 10 can detect fingerprints by detecting the shape of the surface of the finger, etc. The second light emitted from the second light source 54 is mainly reflected from inside the finger, etc., or passes through the finger, etc., and then enters the sensor unit 10. Thus, the sensor unit 10 can detect information related to the biological structure inside the finger, etc. This biological information includes, for example, the pulse wave, pulse, and vascular patterns of the finger and palm. That is, the detection device 1 can also be configured as a fingerprint detection device for detecting fingerprints, or a vein detection device for detecting vascular patterns such as veins.

[0037] The first light can have a wavelength of 500nm to 600nm, for example, around 550nm, and the second light can have a wavelength of 780nm to 950nm, for example, around 850nm. In this case, the first light is blue or green visible light, and the second light is infrared light. The sensor unit 10 can detect fingerprints based on the first light emitted from the first light source 53. The second light emitted from the second light source 54 is reflected inside the detected body Fg, such as a finger, or passes through / is absorbed by the finger and then enters the sensor unit 10. Thus, the sensor unit 10 can detect pulse waves and vascular images (vascular patterns) as information related to the biological organism inside the finger or the like.

[0038] Alternatively, the first light may have a wavelength of 600 nm to 700 nm, for example, around 660 nm, and the second light may have a wavelength of 780 nm to 900 nm, for example, around 850 nm. In this case, as information related to the organism, the sensor unit 10 can detect blood oxygen saturation in addition to pulse wave, pulse, and vascular image based on the first light emitted from the first light source 53 and the second light emitted from the second light source 54. Thus, since the detection device 1 has a first light source 53 and multiple second light sources 54, various types of information related to the organism can be detected by performing detection based on the first light and detection based on the second light.

[0039] also, Figure 1The configuration of the first light source 53 and the second light source 54 shown is merely an example and can be modified appropriately. The detection device 1 may provide multiple light sources (first light source 53 and second light source 54). However, it is not limited to this; a single light source may suffice. For example, multiple first light sources 53 and multiple second light sources 54 may be configured on the first light source substrate 51 and the second light source substrate 52, respectively. Furthermore, the light source substrate on which the first light source 53 and the second light source 54 are provided may be one or more. Alternatively, at least one light source may be configured.

[0040] Figure 2 This is a cross-sectional view showing the general cross-sectional structure of the detection device according to the first embodiment. For example... Figure 2 As shown, multiple detection elements PAA, including photodiodes PD, are arranged on substrate 21. The photodiodes PD are organic photodiodes (OPDs) using organic semiconductors. A light source LS holds a sample Fg, such as a finger, on substrate 21 and the multiple photodiodes PD. Light L1 emitted from the light source LS passes through the sample Fg and illuminates the multiple photodiodes PD. The multiple photodiodes PD can use the light L1 illuminating the sample Fg to detect information related to the sample Fg.

[0041] Figure 2 The detection device 1 shown is a transmission-type detection device that detects light L1 transmitted through the object Fg. However, it is not limited to this; the detection device 1 can also be a reflection-type detection device. Furthermore, Figure 2 The light source LS shown is configured to have at least one of the first light source 53 and the second light source 54 described above. However, the number, arrangement, etc. of the light sources LS can be changed appropriately.

[0042] Figure 3 This is a block diagram illustrating a structural example of the detection device according to the first embodiment. For example... Figure 3 As shown, the detection device 1 also includes a detection control unit 11 and a detection unit 40. Some or all of the functions of the detection control unit 11 are included in the control circuit 122. Additionally, some or all of the functions of the detection unit 40 other than the detection circuit 48 are included in the control circuit 122.

[0043] The sensor unit 10 has multiple photodiodes PD. Each photodiode PD in the sensor unit 10 outputs an electrical signal corresponding to the illuminated light as a detection signal Vdet to the signal line selection circuit 16. Additionally, the sensor unit 10 performs detection based on the gate drive signal Vgcl supplied from the gate line drive circuit 15.

[0044] The detection control unit 11 is a circuit that supplies control signals to the gate line drive circuit 15, the signal line selection circuit 16, and the detection unit 40, and controls their operation. The detection control unit 11 supplies various control signals, such as the start signal STV, the clock signal CK, and the reset signal RST1, to the gate line drive circuit 15. Additionally, the detection control unit 11 supplies various control signals, such as the selection signal ASW, to the signal line selection circuit 16. Furthermore, the detection control unit 11 supplies various control signals to the first light source 53 and the second light source 54, controlling their respective illumination and de-illumination.

[0045] Gate line drive circuit 15 drives multiple gate lines GCL based on various control signals (see reference). Figure 4 The gate line drive circuit 15 selects multiple gate lines GCL sequentially or simultaneously and supplies a gate drive signal Vgcl to the selected gate line GCL. Thus, the gate line drive circuit 15 selects multiple photodiodes PD connected to the gate line GCL.

[0046] Signal line selection circuit 16 selects multiple signal lines SGL sequentially or simultaneously (see reference). Figure 4 The switching circuit is for the photodiode PD. The signal line selection circuit 16 is, for example, a multiplexer. Based on the selection signal ASW supplied from the detection control unit 11, the signal line selection circuit 16 connects the selected signal line SGL to the detection circuit 48. As a result, the signal line selection circuit 16 outputs the detection signal Vdet of the photodiode PD to the detection unit 40.

[0047] The detection unit 40 includes a detection circuit 48, a signal processing unit 44, a coordinate extraction unit 45, a storage unit 46, a detection timing control unit 47, an image processing unit 49, and an output processing unit 50. The detection timing control unit 47 controls the detection circuit 48, the signal processing unit 44, the coordinate extraction unit 45, and the image processing unit 49 to operate synchronously based on the control signal supplied from the detection control unit 11.

[0048] The detection circuit 48 is, for example, an analog front-end circuit (AFE). The detection circuit 48 is a signal processing circuit that at least has the functions of a detection signal amplification unit 42 and an A / D conversion unit 43. The detection signal amplification unit 42 amplifies the detection signal Vdet. The A / D conversion unit 43 converts the analog signal output from the detection signal amplification unit 42 into a digital signal.

[0049] The signal processing unit 44 is a logic circuit that detects a specified physical quantity input to the sensor unit 10 based on the output signal of the detection circuit 48. When a finger touches or approaches the detection surface, the signal processing unit 44 can detect the surface irregularities of the finger or palm based on the signal from the detection circuit 48. Furthermore, the signal processing unit 44 can detect biologically relevant information based on the signal from the detection circuit 48. Biologically relevant information includes, for example, images of blood vessels in the finger or palm, pulse waves, pulse rate, and blood oxygen concentration.

[0050] Additionally, the signal processing unit 44 can also acquire detection signals Vdet (information related to the organism) simultaneously detected by multiple photodiodes PD and perform averaging processing. In this case, the detection unit 40 can suppress measurement errors caused by noise, finger or other objects being detected (Fg) relative to the sensor unit 10, and can perform stable detection.

[0051] The storage unit 46 temporarily stores the signals processed by the signal processing unit 44. The storage unit 46 may be, for example, RAM (Random Access Memory), register circuitry, etc.

[0052] The coordinate extraction unit 45 is a logic circuit that calculates the detection coordinates of the surface irregularities of the fingers, etc., when the signal processing unit 44 detects the contact or proximity of a finger. Additionally, the coordinate extraction unit 45 is a logic circuit that calculates the detection coordinates of blood vessels in the fingers and palm. The image processing unit 49 combines the detection signals Vdet output from each photodiode PD of the sensor unit 10 to generate two-dimensional information representing the shape of the surface irregularities of the fingers, etc., and two-dimensional information representing the shape of blood vessels in the fingers and palm. Furthermore, the coordinate extraction unit 45 may output the detection signal Vdet as a sensor output voltage Vo without calculating the detection coordinates. Alternatively, the coordinate extraction unit 45 and the image processing unit 49 may not be included in the detection unit 40.

[0053] The output processing unit 50 functions as a processing unit that performs processing based on the outputs from multiple photodiodes (PDs). The output processing unit 50 may also include the detection coordinates obtained by the coordinate extraction unit 45 and the two-dimensional information generated by the image processing unit 49 in the sensor output voltage Vo. Furthermore, the function of the output processing unit 50 may be incorporated into other structures (e.g., the image processing unit 49).

[0054] Next, the circuit structure of the detection device 1 will be described as an example. Figure 4 This is a circuit diagram representing the detection device. For example... Figure 4 As shown, the sensor unit 10 has multiple detection elements PAA arranged in a matrix. Each of the multiple detection elements PAA is provided with a photodiode PD.

[0055] Gate lines GCL extend along the first direction Dx and are connected to multiple detection elements PAA arranged along the first direction Dx. Additionally, multiple gate lines GCL(1), GCL(2), ..., GCL(8) are arranged along the second direction Dy and are respectively connected to the gate line drive circuit 15. Furthermore, in the following description, unless it is necessary to distinguish between multiple gate lines GCL(1), GCL(2), ..., GCL(8), they will only be referred to as gate lines GCL. Figure 4 In the example shown here, for ease of understanding, 8 gate lines GCL are represented. However, this is just an example. M gate lines GCL can also be arranged (M is 8 or more, for example, M = 256).

[0056] Signal line SGL extends along the second direction Dy and is connected to photodiodes PD of multiple detection elements PAA arranged along the second direction Dy. Additionally, multiple signal lines SGL(1), SGL(2), ..., SGL(12) are arranged along the first direction Dx and are connected to signal line selection circuit 16 and reset circuit 17, respectively. Furthermore, in the following description, unless it is necessary to distinguish between the multiple signal lines SGL(1), SGL(2), ..., SGL(12), they will only be referred to as signal line SGL.

[0057] Additionally, for ease of explanation, 12 signal lines SGL are shown, but this is merely an example; the signal lines SGL can also be arranged with N lines (N is 12 or more, for example, N = 252). Furthermore, the sensor resolution is set to, for example, 508 dpi (dots per inch), and the number of elements is set to 252 × 256. Furthermore, in... Figure 4 In this circuit, a sensor unit 10 is provided between the signal line selection circuit 16 and the reset circuit 17. However, this is not a limitation; the signal line selection circuit 16 and the reset circuit 17 may also be connected to the ends of the signal line SGL in the same direction.

[0058] Gate line drive circuit 15 is controlled by control circuit 122 (see reference). Figure 1 The gate line drive circuit 15 receives various control signals such as the start signal STV, clock signal CK, and reset signal RST1. Based on these control signals, the gate line drive circuit 15 sequentially selects multiple gate lines GCL(1), GCL(2), ..., GCL(8) in a time-division multiplexing manner. The gate line drive circuit 15 supplies a gate drive signal Vgcl to the selected gate line GCL. As a result, multiple first switching elements Tr connected to the gate line GCL are supplied with the gate drive signal Vgcl, and multiple detection elements PAA arranged in the first direction Dx are selected as detection objects.

[0059] The signal line selection circuit 16 has multiple selection signal lines Lsel, multiple output signal lines Lout, and third switching elements TrS. The multiple third switching elements TrS are respectively configured corresponding to the multiple signal lines SGL. Six signal lines SGL(1), SGL(2), ..., SGL(6) are connected to the common output signal line Lout1. Six signal lines SGL(7), SGL(8), ..., SGL(12) are connected to the common output signal line Lout2. Output signal lines Lout1 and Lout2 are respectively connected to the detection circuit 48.

[0060] Here, signal lines SGL(1), SGL(2), ..., SGL(6) are designated as the first signal line block, and signal lines SGL(7), SGL(8), ..., SGL(12) are designated as the second signal line block. Multiple select signal lines Lsel are each connected to the gate of the third switching element TrS contained within one signal line block. Additionally, one select signal line Lsel is connected to the gate of the third switching element TrS of the multiple signal line blocks.

[0061] Control circuit 122 (reference) Figure 1 The selection signal ASW is sequentially supplied to the selection signal line Lsel. Thus, the signal line selection circuit 16, through the operation of the third switching element TRS, sequentially selects signal lines SGL in a time-division multiplexing manner within a signal line block. Furthermore, the signal line selection circuit 16 selects one signal line SGL from each of the multiple signal line blocks. With this structure, the detection device 1 can reduce the number of ICs (Integrated Circuits), including the detection circuit 48, or the number of IC terminals. Additionally, the signal line selection circuit 16 can also bundle multiple signal lines SGL together and connect them to the detection circuit 48.

[0062] like Figure 4 As shown, the reset circuit 17 has a reference signal line Lvr, a reset signal line Lrst, and a fourth switching element TrR. The fourth switching element TrR is configured corresponding to multiple signal lines SGL. The reference signal line Lvr is connected to either the source or drain of the multiple fourth switching elements TrR. The reset signal line Lrst is connected to the gate of the multiple fourth switching elements TrR.

[0063] Control circuit 122 supplies reset signal RST2 to reset signal line Lrst. This turns on multiple fourth switching elements TrR, and connects multiple signal lines SGL to reference signal line Lvr. Power supply circuit 123 supplies reference signal COM to reference signal line Lvr. This, in turn, connects to the capacitor elements Ca (refer to...) included in multiple detection elements PAA. Figure 5 ) Supply reference signal COM.

[0064] Figure 5 This is a circuit diagram representing multiple detection elements. Furthermore, in Figure 5 The circuit structure of the detection circuit 48 is also shown in the diagram. For example... Figure 5 As shown, the detection element PAA includes a photodiode PD, a capacitor element Ca, and a first switching element Tr. The capacitor element Ca is a capacitor formed on the photodiode PD (sensor capacitor) and is equivalently connected in parallel with the photodiode PD.

[0065] exist Figure 5 The diagram shows two gate lines GCL(m) and GCL(m+1) arranged side-by-side in the second direction Dy, which are among the multiple gate lines GCL. Additionally, it shows two signal lines SGL(n) and SGL(n+1) arranged side-by-side in the first direction Dx, which are among the multiple signal lines SGL. The detection element PAA is the region surrounded by the gate lines GCL and the signal lines SGL.

[0066] The first switching element Tr is disposed correspondingly to the photodiode PD. The first switching element Tr is composed of a thin film transistor, and in this example, it is composed of an n-channel MOS (Metal Oxide Semiconductor) type TFT (Thin Film Transistor).

[0067] The gate of the first switching element Tr, which is attached to a plurality of detection elements PAA arranged side-by-side in the first direction Dx, is connected to the gate line GCL. The source of the first switching element Tr, which is attached to a plurality of detection elements PAA arranged side-by-side in the second direction Dy, is connected to the signal line SGL. The drain of the first switching element Tr is connected to the cathode of the photodiode PD and the capacitor element Ca.

[0068] The power supply circuit 123 supplies a sensor power signal VDDSNS to the anode of the photodiode PD. Additionally, the power supply circuit 123 supplies a reference signal COM, which serves as the initial potential for the signal line SGL and the capacitor element Ca.

[0069] When light shines on the detection element PAA, a current corresponding to the amount of light flows in the photodiode PD, thereby accumulating charge in the capacitor element Ca. When the first switching element Tr is turned on, a current flows in the signal line SGL according to the charge accumulated in the capacitor element Ca. The signal line SGL is connected to the detection circuit 48 via the third switching element TRS of the signal line selection circuit 16. Thus, the detection device 1 can detect a signal corresponding to the amount of light shining on the photodiode PD, on a per-detection-element-PAA or per-block-unit-PAG basis.

[0070] During the readout period, the switch SSW of the detection circuit 48 is turned on and connected to the signal line SGL. The detection signal amplification unit 42 of the detection circuit 48 converts the current variation supplied from the signal line SGL into a voltage variation and amplifies it. The non-inverting input (+) of the detection signal amplification unit 42 is input with a reference potential (Vref) having a fixed potential, and the signal line SGL is connected to the inverting input terminal (-). In this embodiment, a signal identical to the reference signal COM is input as the reference potential (Vref) voltage. Signal processing unit 44 (see reference) Figure 3 The difference between the detection signal Vdet under illumination and the detection signal Vdet without illumination is calculated as the sensor output voltage Vo. Furthermore, the detection signal amplification unit 42 includes a capacitor element Cb and a reset switch RSW. During reset, the reset switch RSW is turned on, and the charge on the capacitor element Cb is reset.

[0071] Next, the structure of the photodiode PD will be explained. Figure 6 This is a schematic top view of the detection device according to the first embodiment. Figure 6 The reflective layer 25 is indicated by adding a slash.

[0072] like Figure 6 As shown, the photodiode PD, the lower electrode 23, the reflective layer 25, and the first switching element Tr are disposed in the region surrounded by the gate line GCL and the signal line SGL. The lower electrode 23 is the cathode electrode of the photodiode PD, and multiple photodiodes PD and multiple lower electrodes 23 are arranged in a matrix on the substrate 21.

[0073] like Figure 6 As shown, the lower electrode 23 is formed with an area smaller than that defined by the gate line GCL and the signal line SGL, and is disposed overlapping at least a portion of the first switching element Tr. The lower electrode 23 has a quadrilateral shape including a first side 23s1 extending along the second direction Dy and a second side 23s2 extending along the first direction Dx. The first side 23s1 of the lower electrode 23 is disposed separately from the signal line SGL in the first direction Dx. The second side 23s2 of the lower electrode 23 is disposed separately from the gate line GCL in the second direction Dy.

[0074] A reflective layer 25, when viewed from above, is disposed between adjacent lower electrodes 23. More specifically, the reflective layer 25 is integrally formed with the source electrode 62 of the first switching element Tr. When viewed from above, the reflective layer 25 is disposed between the first side 23s1 of the lower electrode 23 and the signal line SGL, and between the second side 23s2 of the lower electrode 23 and the gate line GCL. The reflective layer 25 is disposed overlapping at least one of the adjacent gate lines GCL in the second direction Dy. Figure 6In the example shown, the outer edge of the reflective layer 25 overlaps with the gate line GCL located near the first switching element Tr. Furthermore, the reflective layer 25 is disposed separately from the signal line SGL.

[0075] like Figure 6 As shown, the first switching element Tr has a semiconductor layer 61, a source electrode 62, a drain electrode 63, and a gate electrode 64. The semiconductor layer 61 extends along the gate line GCL and is disposed intersecting the gate electrode 64 when viewed from above. The gate electrode 64 is connected to the gate line GCL and extends in a direction orthogonal to the gate line GCL. The two gate electrodes 64 are arranged side by side in a first direction Dx. The first switching element Tr of this embodiment has a dual-gate structure formed by the two gate electrodes 64 overlapping the semiconductor layer 61.

[0076] One end of the semiconductor layer 61 is connected to the source electrode 62 via the second contact hole CH2. The lower electrode 23 is electrically connected to the source electrode 62 of the first switching element Tr via the first contact hole CH1. Thus, the first switching element Tr is electrically connected to the photodiode PD. The other end of the semiconductor layer 61 is connected to the drain electrode 63 via the third contact hole CH3. The drain electrode 63 is connected to the signal line SGL.

[0077] also, Figure 6 The structure and configuration of the first switching element Tr shown are merely an example and can be modified as appropriate.

[0078] Figure 7 yes Figure 6 Sectional view VII-VII'. (See example) Figure 7 As shown, the detection device 1 includes a substrate 21, a first switching element Tr, an organic insulating film 94, a lower electrode 23, a photodiode PD, an upper electrode 24, and a reflective layer 25. Furthermore, in Figure 7 The illustration is omitted, but a sealing film covering the photodiode PD and the upper electrode 24 is provided as needed.

[0079] The substrate 21 is an insulating material, such as glass or resin. The substrate 21 is not limited to a flat surface and may also have a curved surface. In this case, the substrate 21 may also be a film-like resin.

[0080] Furthermore, in this specification, the direction perpendicular to the surface of the substrate 21 is designated as "upper side" or simply "upper". Additionally, the direction from the photodiode PD towards the substrate 21 is designated as "lower side" or simply "lower".

[0081] The base coating films 91a and 91b are disposed on the substrate 21. The base coating films 91a and 91b are formed of inorganic insulating films such as silicon nitride films and silicon oxide films. Furthermore, the structure of the base coating films 91a and 91b is not limited to a laminated film composed of two inorganic insulating films, but may also be three or more layers, or may be a single layer film. In addition, a light-shielding film may be disposed between the substrate 21 and the semiconductor layer 61.

[0082] Multiple first switching elements Tr (transistors) are disposed on substrate 21. A semiconductor layer 61, a gate electrode 64, a source electrode 62, and a drain electrode 63 are sequentially stacked on substrate 21 for each of the multiple first switching elements Tr. More specifically, the semiconductor layer 61 is disposed on the undercoating film 91b. The semiconductor layer 61 is, for example, made of polycrystalline silicon. However, the semiconductor layer 61 is not limited to this; it can also be microcrystalline oxide semiconductor, amorphous oxide semiconductor, low-temperature polycrystalline silicon, etc. Only n-type TFTs are shown as the first switching elements Tr, but p-type TFTs can also be formed simultaneously.

[0083] A gate insulating film 92 covers the semiconductor layer 61 and is disposed on top of the base coating film 91b. The gate insulating film 92 is, for example, an inorganic insulating film such as silicon oxide. The gate electrode 64 is disposed on the gate insulating film 92. Figure 7 In the example shown, the first switching element Tr is a top-gate structure. However, it is not limited to this; the first switching element Tr can be a bottom-gate structure or a dual-gate structure with gate electrodes 64 on both the upper and lower sides of the semiconductor layer 61.

[0084] An interlayer insulating film 93 covers the gate electrode 64 and is disposed on the gate insulating film 92. The interlayer insulating film 93 may have, for example, a stacked structure of silicon nitride and silicon oxide films. A source electrode 62 and a drain electrode 63 are disposed on the interlayer insulating film 93. The source electrode 62 is connected to the source region of the semiconductor layer 61 via a second contact hole CH2 disposed on the gate insulating film 92 and the interlayer insulating film 93. The drain electrode 63 is connected to the drain region of the semiconductor layer 61 via a third contact hole CH3 disposed on the gate insulating film 92 and the interlayer insulating film 93.

[0085] The overlapping portion 62s is formed continuously with the source electrode 62, and is located in the same layer as the source electrode 62 and overlaps with the gate electrode 64. In other words, the portion of the source electrode 62 that overlaps with the gate electrode 64 can be represented as the overlapping portion 62s. The overlapping portion 62s can suppress light L1 from irradiating the semiconductor layer 61.

[0086] The reflective layer 25 is continuously formed with the source electrode 62 and is disposed between the same layer as the source electrode 62, namely the interlayer insulating film 93 and the organic insulating film 94. In other words, the portion of the source electrode 62 that does not overlap with the lower electrode 23 can be represented as the reflective layer 25.

[0087] An organic insulating film 94 is disposed on top of the interlayer insulating film 93, covering the source electrode 62 and drain electrode 63 of the first switching element Tr. The organic insulating film 94 is an organic planarization film, which has superior coverage of wiring steps and surface flatness compared with inorganic insulating materials formed by CVD or the like.

[0088] Multiple photodiodes (PDs) are disposed on the organic insulating film 94. The lower electrode 23 is disposed between the substrate 21, the organic insulating film 94, and the photodiodes (PDs) in a direction perpendicular to the surface of the substrate 21.

[0089] More specifically, the lower electrode 23 is disposed on the organic insulating film 94 and covers the bottom surface and inner surface of the first contact hole CH1 formed in the organic insulating film 94. The lower electrode 23 is connected to the source electrode 62 of the first switching element Tr on the bottom surface of the first contact hole CH1. The lower electrode 23 is the cathode electrode of the photodiode PD and is formed of a metallic material such as silver (Ag). Thus, the lower electrode 23 functions as a reflective electrode. Multiple lower electrodes 23 are arranged separately in units of detection elements PAA (photodiode PD). In addition, the photodiode PD has a larger area than the lower electrode 23 when viewed from above, covering the upper surface and outer edge of the lower electrode 23.

[0090] The photodiode PD is disposed by covering multiple lower electrodes 23 and an organic insulating film 94. Figure 7 Although the illustration is omitted, the photodiode PD has, for example, a structure in which an electron transport layer (first carrier transport layer), an active layer, and a hole transport layer (second carrier transport layer) are stacked between the lower electrode 23 and the upper electrode 24.

[0091] The electron transport layer is formed by coating with materials such as zinc acetate, polyethoxyethylene imide (PEIE), and polyethyleneimine (PEI).

[0092] The active layer uses a mixture of p-type and n-type organic semiconductors. Examples of p-type organic semiconductors include PMDPP3T (poly((2,5-bis(2-hexyldecyl)-2,3,5,6-tetrahydro-3,6-dioxopyrrolo(3,4-c)pyrrole-1,4-diyl)-alt-(3′,3″-dimethyl-2,2′:5′,2″-terthiophene)-5,5″-diyl)). Examples of n-type organic semiconductors include PC61BM ([6,6]-phenyl C61-butyric acidmethyl ester). Alternatively, the active layer can also be formed using materials such as P3HT:PC61BM and PTB7:PC71BM.

[0093] Hole transport layers are, for example, tungsten oxide (WO3) and molybdenum oxide (MoO2). x The hole transport layer is formed by evaporation or sputtering. Alternatively, the hole transport layer can also be formed by coating with materials such as PEDOT:PSS.

[0094] The electron transport layer, active layer, and hole transport layer forming the photodiode PD are continuously disposed in such a way that they cover multiple lower electrodes 23. In other words, the photodiode PD includes a portion disposed overlapping the lower electrodes 23 and a portion disposed on the organic insulating film 94 in a region that does not overlap with the lower electrodes 23.

[0095] The upper electrode 24 is disposed across multiple photodiodes PD. The upper electrode 24 is the anode electrode of the photodiode PD and is continuously formed across multiple detection elements PAA (photodiode PD). The upper electrode 24 is formed, for example, from a light-transmitting conductive material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).

[0096] As described above, the detection device 1 of this embodiment includes: a substrate 21; a plurality of photodiodes PD disposed on the substrate 21; a plurality of first switching elements Tr (transistors) disposed corresponding to the plurality of photodiodes PD; a plurality of gate lines GCL extending along a first direction Dx; a plurality of signal lines SGL extending along a second direction Dy intersecting the first direction Dx; a plurality of lower electrodes 23 disposed between the transistors and the photodiodes PD in a direction perpendicular to the substrate 21, and disposed corresponding to the plurality of photodiodes PD; an upper electrode 24 disposed across the plurality of photodiodes PD; and a reflective layer 25 disposed between the substrate 21 and the photodiodes PD in a direction perpendicular to the substrate 21. The lower electrodes 23 have an area smaller than the area divided by the plurality of gate lines GCL and the plurality of signal lines SGL, and the reflective layer 25 is disposed between adjacent lower electrodes 23 when viewed from above.

[0097] Furthermore, in the detection device 1 of this embodiment, the first switching element Tr (transistor) includes a semiconductor layer 61, a gate electrode 64, and a source electrode 62, which are stacked in the order of semiconductor layer 61, gate electrode 64, and source electrode 62 in a direction perpendicular to the substrate 21. The reflective layer 25 is disposed on the same layer as the source electrode 62.

[0098] Therefore, in the detection device 1, the detected object Fg (refer to) Figure 2 Light L1 is incident on photodiode PD. In the region overlapping with lower electrode 23, the portion of light L1 that is not absorbed by photodiode PD is reflected by lower electrode 23. Then, a portion of the reflected light L1a is absorbed by photodiode PD.

[0099] In the region that does not overlap with the lower electrode 23 (the region between adjacent lower electrodes 23), the light L1 transmitted through the photodiode PD, i.e., the component of light L1 that is not absorbed by the photodiode PD, is reflected by the reflective layer 25. The reflected light L1b reflected by the reflective layer 25 travels upward (towards the photodiode PD), and a portion of the reflected light L1b is absorbed by the photodiode PD. Thus, by providing the reflective layer 25, the detection device 1 of this embodiment can improve the utilization efficiency of light L1 in the region between adjacent lower electrodes 23.

[0100] Furthermore, since the outer edge of the reflective layer 25 overlaps with the gate line GCL, the gap between the reflective layer 25 and the gate line GCL can be reduced when viewed from above. The reflective layer 25 can effectively reflect light L1 in the area surrounded by the gate line GCL and the signal line SGL, thereby improving the utilization efficiency of light L1. In addition, the reflective layer 25 also functions as a light-shielding layer to suppress external light incident on the photodiode PD from the substrate 21 side. The detection device 1 can suppress noise components caused by external light irradiating between adjacent lower electrodes 23.

[0101] (Second Implementation)

[0102] Figure 8 This is a schematic cross-sectional view illustrating the detection device according to the second embodiment. Furthermore, in the following description, structural elements identical to those described in the above embodiments are labeled with the same reference numerals, and repeated descriptions are omitted.

[0103] In the first embodiment described above, the structure in which the reflective layer 25 is disposed in the same layer as the source electrode 62 has been described, but it is not limited to this. The reflective layer 25 may also be disposed in a different layer than the source electrode 62, that is, any layer between the substrate 21 and the photodiode PD.

[0104] like Figure 8 As shown, in the detection apparatus 1A according to the second embodiment, the reflective layer 25a is disposed in a direction perpendicular to the substrate 21 between the substrate 21 and the semiconductor layer 61 of the first switching element Tr. More specifically, the reflective layer 25a is disposed on the base coating film 91a. The base coating film 91b is disposed on the base coating film 91a in a manner that covers the reflective layer 25a.

[0105] exist Figure 8 In the example shown, the reflective layer 25a is disposed in an area that does not overlap with the lower electrode 23, and is disposed individually on a per-PAA (photodiode PD) basis. Although the illustration is omitted, the reflective layer 25a, when viewed from above, is similar to... Figure 6 Similarly, it is disposed between adjacent lower electrodes 23. However, since the reflective layer 25a is disposed on a different layer than the source electrode 62 (signal line SGL) and the gate electrode 64 (gate line GCL), there are fewer constraints on the configuration caused by these electrodes, wiring, etc. That is, the reflective layer 25a can be disposed overlapping at least a portion of the signal line SGL and the gate line GCL when viewed from above (see reference). Figure 6 , Figure 10 It can also be set separately from the signal line SGL and the gate line GCL.

[0106] (A variation of the second embodiment)

[0107] Figure 9 This is a cross-sectional view schematically showing a cross-section of the detection device according to a modified example of the second embodiment. For example... Figure 9 As shown, in the detection device 1B according to the modified example of the second embodiment, the reflective layer 25b is provided to extend from a region that does not overlap with the lower electrode 23 to a region that overlaps with the first switching element Tr and the lower electrode 23. In the region that overlaps with the first switching element Tr, the reflective layer 25b is provided below the semiconductor layer 61 in a direction perpendicular to the substrate 21, that is, between the substrate 21 and the semiconductor layer 61.

[0108] The reflective layer 25b is formed in a region that overlaps entirely with the semiconductor layer 61 and the lower electrode 23, and also in a region that overlaps with at least a portion of the signal line SGL. In this modified example, the reflective layer 25b also functions as a light-shielding layer to suppress light incident from the substrate 21 side onto the semiconductor layer 61.

[0109] The reflective layer 25b, when viewed from above, can be disposed overlapping at least a portion of the signal line SGL and the gate line GCL (see reference). Figure 6 , Figure 10 Alternatively, the reflective layer 25b can be disposed separately from the signal line SGL and the gate line GCL. Furthermore, the reflective layer 25b can be continuously formed over multiple detection elements PAA (photodiodes PD).

[0110] (Third Implementation)

[0111] Figure 10 This is a schematic top view of the detection device according to the third embodiment. Figure 11 yes Figure 10 The XI-XI' sectional view. (See example...) Figure 10 as well as Figure 11 As shown, in the detection device 1C according to the third embodiment, the reflective layer 25c is disposed on the same layer as the gate electrode 64.

[0112] like Figure 10 As shown, the reflective layer 25c is integrally formed with the gate electrode 64 and the gate line GCL. The reflective layer 25c is configured to be connected to the gate line GCL located near the first switching element Tr and separated from the gate line GCL located away from the first switching element Tr. Furthermore, the reflective layer 25c is disposed overlapping at least one of the signal lines SGL adjacent in the first direction Dx when viewed from above. More specifically, the outer edge of the reflective layer 25c is disposed overlapping the signal line SGL adjacent to the first side 23s1 of the lower electrode 23.

[0113] In other words, the reflective layer 25c is provided to cover most of the area divided by the gate line GCL and the signal line SGL, and an opening is formed in the portion that overlaps with the semiconductor layer 61, the source electrode 62 and the drain electrode 63 of the first switching element Tr.

[0114] like Figure 11 As shown, the reflective layer 25c is disposed between the gate insulating film 92 and the interlayer insulating film 93. That is, the reflective layer 25c and the gate electrode 64 are disposed on the gate insulating film 92. The interlayer insulating film 93 covers the gate electrode 64 and is disposed on the gate insulating film 92.

[0115] With this structure, in this embodiment, the reflective layer 25c is provided to cover most of the area that does not overlap with the lower electrode 23, which can effectively reflect the light L1 transmitted through the photodiode PD.

[0116] (Fourth Implementation)

[0117] Figure 12 This is a schematic top view of the detection device according to the fourth embodiment. Figure 13 yes Figure 12 Sectional view XIII-XIII'. Furthermore, in Figure 12 In the accompanying drawings, for ease of observation, the source electrode 62 and the reflective layer 25 integrally formed with the source electrode 62 are omitted (see reference). Figure 6 The illustration is shown below. Figure 12 as well as Figure 13 As shown, the detection device 1D according to the fourth embodiment also includes a bottom gate line GCLB and a bottom gate electrode 65. In the detection device 1D, the reflective layer 25d is disposed on the same layer as the bottom gate line GCLB and the bottom gate electrode 65.

[0118] like Figure 12 As shown, the bottom gate line GCLB is disposed below the gate line GCL and extends along the gate line GCL in the first direction Dx. The bottom gate electrode 65 is connected to the bottom gate line GCLB and extends in a direction orthogonal to the bottom gate line GCLB. The two bottom gate electrodes 65 are arranged side by side in the first direction Dx and are disposed overlapping the semiconductor layer 61. In addition, the two bottom gate electrodes 65 are respectively disposed below the gate electrode 64.

[0119] The reflective layer 25d is integrally formed with the bottom gate electrode 65 and the bottom gate line GCLB. The reflective layer 25d is configured to be connected to the bottom gate line GCLB on the side closer to the first switching element Tr, and separated from the bottom gate line GCLB on the side farther away from the first switching element Tr. In addition, the reflective layer 25d is disposed overlapping at least one of the signal lines SGL adjacent in the first direction Dx when viewed from above. More specifically, the outer edge of the reflective layer 25d is disposed overlapping the signal line SGL adjacent to the first side 23s1 of the lower electrode 23.

[0120] In other words, the reflective layer 25d is provided to cover most of the area divided by the gate line GCL and the signal line SGL, and an opening is formed in the portion that overlaps with the semiconductor layer 61, the source electrode 62 and the drain electrode 63 of the first switching element Tr.

[0121] like Figure 13 As shown, the first switching element Tr has a bottom gate electrode 65, a semiconductor layer 61, a gate electrode 64 (top gate electrode), a source electrode 62, and a drain electrode 63 stacked sequentially in a direction perpendicular to the substrate 21. That is, the first switching element Tr in this embodiment has a dual-gate structure.

[0122] As described above, in the detection device 1D, the reflective layer 25d is disposed on the same layer as the bottom gate electrode 65. The bottom gate electrode 65 and the reflective layer 25d are disposed on the undercoating film 91a. The undercoating film 91b covers the bottom gate electrode 65 and the reflective layer 25a and is disposed on the undercoating film 91a. The bottom gate line GCLB is electrically connected to the gate line GCL at any location, and a gate drive signal Vgcl with the same potential as the gate electrode 64 is supplied to the bottom gate electrode 65.

[0123] In the region that does not overlap with the lower electrode 23, a reflective layer 25 is provided above the reflective layer 25d, separated by an undercoat film 91b, a gate insulating film 92, and an interlayer insulating film 93. The structure of the source electrode 62 and the reflective layer 25 is the same as in the first embodiment described above, and repeated descriptions are omitted. Since the detection device 1D of this embodiment has two reflective layers 25 and 25d, it can effectively reflect the light L1 transmitted through the photodiode PD.

[0124] With this structure, the reflective layer 25d is configured to cover most of the area that does not overlap with the lower electrode 23, thus effectively reflecting the light L1 transmitted through the photodiode PD.

[0125] (Fifth Implementation)

[0126] Figure 14 This is a cross-sectional view schematically showing the detection device according to the fifth embodiment. For example... Figure 14As shown, the detection device 1E according to the fifth embodiment has an inorganic insulating film 95 disposed on an organic insulating film 94. The inorganic insulating film 95 is, for example, an inorganic insulating material such as a silicon nitride film or a silicon oxide film. The organic insulating film 94 and the inorganic insulating film 95 are disposed covering a plurality of first switching elements Tr. The inorganic insulating film 95 covers the inner surface of the first contact hole CH1 formed on the organic insulating film 94, and has an opening in the area overlapping with the bottom surface of the first contact hole CH1.

[0127] The lower electrode 23 and the photodiode PD are disposed on the inorganic insulating film 95 and electrically connected to the source electrode 62 of the first switching element Tr via the first contact hole CH1. That is, the inorganic insulating film 95 is disposed between the organic insulating film 94 and the lower electrode 23.

[0128] In this embodiment, the reflective layer 25e is disposed between the organic insulating film 94 and the inorganic insulating film 95 in a region that does not overlap with the lower electrode 23. That is, in the region where the reflective layer 25e is provided, the organic insulating film 94, the reflective layer 25e, the inorganic insulating film 95, the photodiode PD, and the upper electrode 24 are sequentially stacked in a direction perpendicular to the substrate 21. Similar to the embodiment described above, the reflective layer 25e can be disposed overlapping with the gate line GCL or the signal line SGL.

[0129] In the detection device 1E according to the fifth embodiment, compared with the first to fourth embodiments described above, the reflective layer 25e is provided close to the photodiode PD. That is, in the direction perpendicular to the substrate 21, no organic insulating film 94 is provided between the photodiode PD and the reflective layer 25e, and the photodiode PD and the reflective layer 25e are separated by an inorganic insulating film 95, which is thinner than the organic insulating film 94, and are placed opposite each other.

[0130] Therefore, the reflected light L1b reflected by the reflective layer 25e is protected from stray light generation and is efficiently returned to the photodiode PD side. Consequently, the detection device 1E can improve the utilization efficiency of light L1.

[0131] Furthermore, the reflective layer 25e of this embodiment can be combined with the reflective layers 25, 25a, 25b, 25c, and 25d of the first to fourth embodiments described above. As an example, a reflective layer 25 may also be provided below the reflective layer 25e in the same layer as the source electrode 62 (see reference). Figure 7 Alternatively, the inorganic insulating film 95 of this embodiment may also be provided in the first to fourth embodiments described above.

[0132] Furthermore, in the above embodiments, examples have been described where the lower electrode 23 of the photodiode PD is the cathode electrode of the photodiode PD and the upper electrode 24 is the anode electrode of the photodiode PD. However, this is not a limitation; it is also possible for the lower electrode 23 to be the anode electrode of the photodiode PD and the upper electrode 24 to be the cathode electrode of the photodiode PD.

[0133] (Sixth Implementation Method)

[0134] Figure 15 This is a cross-sectional view showing the general cross-sectional structure of the detection device according to the sixth embodiment. In the first to fifth embodiments described above, transmission-type detection devices 1, 1A to 1E were described, but the scope is not limited thereto. Figure 15 As shown, the detection device 1F according to the sixth embodiment is a reflective detection device. Specifically, two light sources LS are disposed on the side of the object to be detected, such as a finger, and are arranged side by side in the first direction Dx such that the object to be detected is sandwiched between the object to be detected, Fg. Light L1 emitted from the light sources LS travels along the first direction Dx and is reflected by the surface or interior of the object to be detected, Fg. The light reflected by the object to be detected, Fg, illuminates a photodiode PD. Thus, multiple photodiodes PD can detect information related to the object to be detected, Fg, based on the light L1 illuminated by the light sources LS.

[0135] also, Figure 15 The positions and number of light sources LS shown are only schematic diagrams and can be appropriately changed according to the characteristics (detection sensitivity) required by the detection device 1F, the detection object, etc.

[0136] The preferred embodiments of the present invention have been described above, but the present invention is not limited to such embodiments. The content disclosed in the embodiments is merely an example, and various modifications can be made without departing from the spirit of the present invention. Appropriate modifications made without departing from the spirit of the present invention are of course also within the technical scope of the present invention. Without departing from the spirit of the above embodiments and variations, at least one of various omissions, substitutions, and modifications of structural elements can be made.

Claims

1. A detection device, characterized in that, Having: a substrate; a plurality of photodiodes provided on the substrate; a plurality of transistors provided corresponding to the plurality of photodiodes, respectively; a plurality of gate lines extending in a first direction; a plurality of signal lines extending in a second direction intersecting the first direction; a plurality of lower electrodes provided between the transistors and the photodiodes in a direction perpendicular to the substrate, provided corresponding to the plurality of photodiodes, respectively; an upper electrode provided across the plurality of photodiodes; and a reflective layer provided between the substrate and the photodiodes in the direction perpendicular to the substrate, the lower electrode has an area smaller than an area divided by the plurality of gate lines and the plurality of signal lines, the reflective layer is provided between adjacent lower electrodes when viewed from above, and the reflective layer has a shape in which a portion extending in the second direction between one of the signal lines adjacent in the first direction and a first side of the lower electrode is continuous with a portion extending in the first direction between one of the gate lines adjacent in the second direction and a second side of the lower electrode, the transistor includes a semiconductor layer, a gate electrode, and a source electrode, the semiconductor layer, the gate electrode, and the source electrode are sequentially stacked in the direction perpendicular to the substrate, the reflective layer is provided in the same layer as the source electrode, the reflective layer is provided overlapping the other of the gate lines adjacent in the second direction when viewed from above, and is provided separately from one of the signal lines adjacent in the first direction.

2. The detection device according to claim 1, wherein the source electrode is provided overlapping the gate electrode. ​

Images