Preparation method of hole transport layer and perovskite solar cell

Abstract

This invention relates to the field of perovskite solar cell technology, and discloses a method for preparing a hole transport layer and a perovskite solar cell. The method utilizes spiro-OMeTAD as the hole transport layer, mixes ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt (ETPTFSI) in a CB solvent, forms a precursor solution through photopretreatment, and then forms the hole transport layer through a coating process. The method also explores the discovery of ethyltriphenylphosphine cation (ETP... + The lowest unoccupied molecular orbital (LUMO) energy level is similar to that of organic high conductivity layers (HTLs), and upon photoexcitation, it accepts an electron from the organic semiconductor and forms a neutral radical ETP. • ETP • The unpaired electrons in the chlorobenzene have high energy and can break the C-Cl bond in chlorobenzene. This reaction chain promotes the efficient doping of organic HTL by the solvent CB through CB. In addition, ETPTFSI has extremely low hygroscopicity and a large space size, which helps to improve moisture resistance and reduce the migration of iodide ions to the HTL / silver electrode, thereby significantly improving stability.

Description

Technical Field

[0001] This invention relates to the field of perovskite solar cell technology, specifically to a method for preparing a hole transport layer and a perovskite solar cell. Background Technology

[0002] Perovskite solar cells, as a novel type of solar cell, have become the most promising photovoltaic technology for commercial application due to their low cost and simple fabrication process. Currently, the laboratory-certified efficiency of these cells has reached 27.0%, making them the most promising alternative to the relatively expensive polycrystalline silicon, copper indium gallium selenide (CIGS), and cadmium telluride (CdTe) solar cells on the market. Although the efficiency of perovskite solar cells already meets application requirements, device stability remains a significant challenge for their commercial application and a critical issue that must be addressed in practical applications. For the overall stability of the device, attention should be paid not only to the light-absorbing layer but also to the stability of the charge transport layer. Currently, 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene (spiro-OMeTAD) is the most widely used hole transport layer in formal (nip) perovskite solar cell devices. However, it requires doping with lithium bis(trifluoromethanesulfonyl)imide (LiTFSI) and 4-tert-butylpyridine (tBP) to complete a long-term, uncontrollable air oxidation process to improve conductivity. During this process, the unstable dopant LiTFSI is extremely prone to migration and hygroscopicity, and tBP is easily volatilized, leaving pores, which accelerates the degradation of perovskite solar cells, seriously threatening long-term operational stability and posing a major obstacle to their commercialization. Therefore, developing a fast and controllable doping method for hole transport layers in organic semiconductors is urgently needed.

[0003] To address these issues, significant efforts have been devoted to replacing LiTFSI and tBP with more stable additives. Decades of research on organic hole transport layer doping have shown that an effective doping formulation typically comprises two additives: an active oxidizing dopant, such as O2, CO2, Co / Mo-based organometallic complexes, or triphenylamine radical derivatives, which introduce hole polarons through oxidized organic semiconductors (OSCs); and a doping modifier, such as LiTFSI, KTFSI, Y(III) / La(III)-tBP complexes, or TBMPTFSI, which promotes hole polaron activation. However, these doping strategies using two (or more) additives often require precise stoichiometry and specific solvent selection, which significantly increases the complexity of achieving accurate doping for perovskites with different band gaps and poses challenges to the fabrication of large-area uniform films. To date, an efficient doping strategy for hole transport layers that simultaneously achieves uniformity, stability, and controllability has not been developed. Summary of the Invention

[0004] To address the problems of unstable dopant LiTFSI's extreme susceptibility to migration and hygroscopicity, the volatility of tBP leaving pores, and the long-term operational instability caused by uncontrolled air oxidation, this invention proposes a method for rapidly and controllably doping a hole transport layer using a photocatalytic solvent, and its application in perovskite solar cells. This invention uses spiro-OMeTAD as the hole transport layer, mixing ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt (ETPTFSI) in chlorobenzene (CB) solvent, and forming a precursor solution through photopretreatment. Through exploration, it was discovered that ethyltriphenylphosphine cation (ETP... + The lowest unoccupied molecular orbital (LUMO) energy level is similar to that of organic high conductivity layers (HTLs), and upon photoexcitation, it accepts an electron from the organic semiconductor and forms a neutral radical ETP. • ETP • The unpaired electrons in the CB have high energy, enabling them to break the C-Cl bond in the CB. This reaction chain promotes the efficient doping of organic HTL by the solvent CB through CB. In addition, ETPTFSI has extremely low hygroscopicity and a large dimensional size, which helps to improve moisture resistance and reduce the migration of iodide ions to the HTL / silver electrode, thereby significantly improving stability.

[0005] To achieve the above objectives, in a first aspect, the present invention provides a method for preparing a hole transport layer using a photocatalytic solvent with rapid and controllable doping, comprising the following steps:

[0006] S1. Ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt and spiro-OMeTAD powder are uniformly dissolved in chlorobenzene at a ratio of 1g:1.5~6g to prepare a precursor solution for the hole transport layer.

[0007] S2. The precursor solution is pretreated by ultraviolet light and then deposited into a film to obtain a hole transport layer.

[0008] As a further preferred technical solution of the present invention, step S1 specifically includes:

[0009] (1) Prepare a spiro-OMeTAD solution by mixing spiro-OMeTAD powder with chlorobenzene solvent at a ratio of 1g:12~24mL;

[0010] (2) Prepare an ETPTFSI solution as an additive by mixing ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt with chlorobenzene solvent at a ratio of 1g:2.30~2.75mL;

[0011] (3) The precursor solution of the hole transport layer is obtained by mixing ETPTFSI solution and spiro-OMeTAD solution in a volume ratio of 1:7.3~24.0.

[0012] As a further preferred technical solution of the present invention, the pretreatment uses ultraviolet light with a wavelength of 380-420nm and an irradiation time of 1-30min.

[0013] As a further preferred technical solution of the present invention, the film deposition adopts at least one coating process among drop coating, blade coating, and spin coating.

[0014] According to a second aspect of the present invention, the present invention also provides a hole transport layer, which is prepared by the above-described preparation method.

[0015] According to a third aspect of the invention, the invention also provides the application of a hole transport layer in a perovskite solar cell.

[0016] According to a fourth aspect of the present invention, the present invention also provides a perovskite solar cell, which is a nip formal structure or a pin inverse structure, wherein:

[0017] The nip formal structure includes a transparent conductive substrate, a deposited electron transport layer, a perovskite light-absorbing layer, a hole transport layer as described in the second aspect, and an electrode arranged sequentially; the pin inverted structure includes a transparent conductive substrate, a hole transport layer as described in the second aspect, a perovskite light-absorbing layer, a deposited electron transport layer, and an electrode arranged sequentially; the perovskite light-absorbing layer is a perovskite thin film.

[0018] As a further preferred technical solution of the present invention, the transparent conductive substrate is selected from FTO (fluorine-doped tin oxide) or ITO (indium tin oxide) glass, etc., and the thickness is 10nm~500nm;

[0019] And / or, the electron transport layer is one or a combination of several of tin dioxide (SnO2), titanium dioxide (TiO2), zinc oxide (ZnO), isomethyl [6,6]-phenyl-C61-butyrate (PCBM), fullerenes (C60, C70, C76, etc.), with a thickness of 10nm~400nm;

[0020] And / or, the perovskite light-absorbing layer is FAPbI3, MAPbI3, Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(Br 0.17 I 0.83 At least one of the following three, with a thickness of approximately 600-800 nm;

[0021] And / or, the hole transport layer has a thickness of 10nm~400nm;

[0022] And / or, the electrode is a metal electrode or a carbon electrode, wherein the metal electrode is gold or silver.

[0023] As a further preferred technical solution of the present invention, the perovskite thin film is formed by one of the following methods: one-step spin coating, two-step spin coating, one-step scraping coating, two-step scraping coating, one-step spraying coating, two-step spraying coating, and slot coating.

[0024] The principle of this invention: Utilizing ETPFSI as an additive, a rapid and controllable doping method for hole transport layers using photocatalytic solvents has been developed, greatly simplifying the doping formulation and process. During the doping process, ETP... + Cationic ions can effectively catalyze the electron transfer from the excited state to the solvent CB in organic semiconductors, thereby enabling precise control over electrical properties. We also found that ETP... + The LUMO energy level and the strong electronegativity of Cl are two key factors dominating this doping process. Due to the excellent compatibility and stability of ETPTFSI with spiro-OMeTAD and CB solvents, devices / modules doped using this method exhibit significantly enhanced uniformity and stability compared to conventional doping.

[0025] Compared with the prior art, the present invention can achieve the following beneficial effects:

[0026] (1) The present invention uses a photocatalytic solvent doping method to prepare a large-area, high-quality, uniform hole transport layer film, which effectively solves the problems of uncontrollable preparation of traditional hole transport layer films and excessively long air oxidation time.

[0027] (2) The preparation method involved in this invention is relatively simple, easy to operate, has low energy consumption, and high performance feedback, which is conducive to industrial high-throughput preparation. At the same time, this process is also an important process for realizing large-area high-quality perovskite solar cell modules, and is suitable for promotion and application. Attached Figure Description

[0028] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.

[0029] Figure 1 Optical microscope images of the hole transport layer films prepared in Example 1 and Comparative Example 1, respectively.

[0030] Figure 2 The image shows a cross-sectional scanning electron microscope image of the battery devices prepared in Example 1 and Comparative Example 1 under 85% humidity conditions.

[0031] Figure 3The graphs show the current-voltage characteristics of perovskite solar cells, where: a) is a comparison between Example 1 and Comparative Example 1; b) is a comparison between Example 2 and Comparative Example 2.

[0032] Figure 4 The efficiency of different batches of devices in Example 1 and Comparative Example 1 is summarized and compared.

[0033] Figure 5 The device efficiency of Example 1 and Comparative Example 1 varies with aging time under conditions of 25°C and ~50% RH.

[0034] Figure 6 The UV-Vis absorption curves of hole transport layer precursor solutions after pretreatment with different illumination times are shown. The test subjects are the hole transport layer precursor solutions of Comparative Example 1 and Example 1.

[0035] The objectives, features, and advantages of this invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0036] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0037] Unless otherwise defined, the technical terms used in the following embodiments have the same meanings as commonly understood by those skilled in the art to which this invention pertains. Unless otherwise specified, the experimental reagents used in the following embodiments are conventional biochemical reagents; and the experimental methods described are conventional methods.

[0038] Example 1

[0039] A method for fabricating a perovskite solar cell based on a FAPbI3 type absorber layer with a rapidly and controllably doped hole transport layer using a photocatalytic solvent is disclosed, with the following specific steps:

[0040] (1) Preparation of transparent conductive substrate:

[0041] A 2.5cm × 2.5cm etched ITO conductive glass substrate was sequentially ultrasonically cleaned in detergent, acetone, deionized water, and isopropanol for 15 min each. It was then dried with N2 and placed in a plasma cleaner for UV-ozone treatment for 10 min.

[0042] (2) Preparation of SnO2 electron transport layer:

[0043] SnO2 (2.67wt% aqueous solution) was spin-coated onto the surface of an ITO conductive glass substrate at 3000 rpm for 30 s, and then heat-annealed in air at 150 °C for 30 min.

[0044] (3) Preparation of FAPbI3 type perovskite light-absorbing layer

[0045] 1.5 mmol of PbI2 was dissolved in 1 mL of DMF:DMSO = 95:5 (volume ratio) and incubated overnight at 60 °C on a hot plate to prepare a lead iodide precursor solution. 90 mg FAI, 6.9 mg MAI, and 9 mg MACl were dissolved in 1 mL of isopropanol (IPA) and then thoroughly dissolved in a shaker to prepare an organic ammonium salt solution. An appropriate amount of the lead iodide precursor solution was spin-coated onto an electron transport layer at 1700 rpm for 30 s, followed by a first annealing treatment at 70 °C for 2 min to obtain a uniform lead iodide film. The organic ammonium salt solution was then spin-coated onto the lead iodide film at 2200 rpm for 35 s, followed by a second annealing treatment at 150 °C for 15 min to obtain a perovskite film, namely the FAPbI3 type perovskite light-absorbing layer.

[0046] (4) Preparation of hole transport layer

[0047] Spiro-OMeTAD powder was uniformly dissolved in CB solvent at a ratio of 1g:13.83mL to obtain a 72.3mg / mL Spiro-OMeTAD solution. ETPFSI was dissolved in CB at a ratio of 1g:2.50mL to obtain a 400mg / mL LiTFSI solution. 80μL of 400mg / mL ETPFSI solution was added to 1 mL of the 72.3 mg / mL Spiro-OMeTAD solution, mixed, and then placed in a shaker to dissolve completely to obtain the precursor solution for the hole transport layer. The precursor solution was pretreated with 420 nm ultraviolet light for 10 min. Then, the pretreated precursor solution was deposited on the surface of the prepared perovskite light-absorbing film using a spin-coating process at 4000 rpm, 3000 rpm / s, and 30 s rotation to obtain the hole transport layer film.

[0048] (5) Evaporation of metal electrodes:

[0049] The product obtained in step (4) is placed in a vapor deposition apparatus, and Ag is vapor deposited on the surface of the hole transport layer under high vacuum to obtain a metal electrode Ag, thereby obtaining a perovskite solar cell with FAPbI3 type absorber layer.

[0050] Example 2

[0051] A method for fabricating a perovskite solar cell based on a MAPbI3-type absorber layer with a rapidly and controllably doped hole transport layer using a photocatalytic solvent is disclosed, with the following specific steps:

[0052] (1) Preparation of transparent conductive substrate: Same as in Example 1.

[0053] (2) Preparation of SnO2 electron transport layer: Same as in Example 1.

[0054] (3) Preparation of MAPbI3 type perovskite light-absorbing layer:

[0055] 1.3 mmol of PbI2 was dissolved in 1 mL of a solvent with a DMF:DMSO ratio of 9:1 (volume ratio), and incubated overnight at 60 °C on a hot plate to prepare a lead iodide precursor solution. 60 mg of MAI and 5 mg of MACl were dissolved in 1 mL of IPA, and then dissolved completely in a shaker to prepare an organic ammonium salt solution. An appropriate amount of the lead iodide precursor solution was spin-coated onto an electron transport layer at 1700 rpm for 30 s, and then annealed at 70 °C for 2 min to obtain a uniform lead iodide film. The organic ammonium salt solution was then spin-coated onto the lead iodide film at 2200 rpm for 35 s, and then annealed at 150 °C for 15 min to obtain a MAPbI3 type perovskite light-absorbing layer.

[0056] (4) Preparation of hole transport layer: Same as in Example 1.

[0057] (5) Evaporation of metal electrodes: Same as in Example 1.

[0058] Comparative Example 1

[0059] The preparation method in this comparative example is basically the same as that in Example 1, except that the preparation method of the hole transport layer in step (4) is different. That is, the spiro-OMeTAD powder is uniformly dissolved in CB solvent at a ratio of 1g:13.83mL to obtain a 72.3mg / mL spiro-OMeTAD solution; LiTFSI is dissolved in acetonitrile (ACN) at a ratio of 1g:1.92mL to obtain a 520mg / mL LiTFSI solution; 28.85μL tBP and 17.5μL 520mg / mL LiTFSI solution are added to 1 mL of 72.3 mg / mL spiro-OMeTAD solution, mixed and placed in a shaker to fully dissolve, and the hole transport layer precursor solution is spin-coated onto the surface of the annealed and cooled perovskite film. The spin-coating process is 4000 rpm, 3000 rpm / s, and spin-coating for 30s to complete the preparation of the hole transport layer.

[0060] Comparative Example 2

[0061] The preparation method in this comparative example is basically the same as that in Example 2, except that the preparation method of the hole transport layer in step (4) is different. That is, the spiro-OMeTAD powder is uniformly dissolved in CB solvent at a ratio of 1g:13.83mL to obtain a 72.3mg / mL spiro-OMeTAD solution; LiTFSI is dissolved in acetonitrile (ACN) at a ratio of 1g:1.92mL to obtain a 520mg / mL LiTFSI solution; 28.85μL tBP and 17.5μL 520mg / mL LiTFSI solution are added to 1 mL of 72.3 mg / mL spiro-OMeTAD solution, mixed and placed in a shaker to fully dissolve, and the hole transport layer precursor solution is spin-coated onto the surface of the perovskite film after annealing and cooling. The spin-coating process is 4000 rpm, 3000 rpm / s, and spin-coating for 30s to complete the preparation of the hole transport layer.

[0062] Microscopic images of the hole transport layer films prepared in Example 1 and Comparative Example 1 are shown below. Figure 1 As shown, the film quality of Example 1 is significantly improved compared to Comparative Example 1. In Comparative Example 1, LiTFSI dopant aggregation was observed, while in Example 1, no aggregation was observed, and the overall film was uniform. This is beneficial for the preparation and storage of hole transport layer films with larger areas.

[0063] The devices prepared in step (5) of Example 1 and Comparative Example 1 were subjected to aging tests under high humidity conditions of 85%, and cross-sectional scanning electron microscopy analysis was performed. The results are as follows: Figure 2 As shown, the device stability is greatly improved by using the photocatalytic solvent rapid and controllable doping hole transport layer method of the present invention.

[0064] The photoelectric conversion efficiency of the obtained 2.5cm × 2.5cm perovskite solar cell device was tested under standard sunlight conditions (AM 1.5G, 100mW / cm) using a solar simulator. 2 The test mask area is 1.01 cm². 2 The scanning speed was 20 mV / s, and the IV results obtained through forward and reverse scanning tests were as follows: Figure 3 As shown in Table 1.

[0065] Table 1. Performance parameters of perovskite solar cells.

[0066]

[0067] As can be seen from Table 1, the method of rapid and controllable doping of hole transport layers using photocatalytic solvents, and the application of the hole transport layer film prepared by this method in large-area perovskite solar cells, significantly improves the photoelectric conversion efficiency and efficiency distribution uniformity of large-area perovskite solar cells.

[0068] The device efficiency statistics for different batches of Comparative Example 1 and Example 1 were compiled. Figure 4 As can be seen from the example, the method of rapid and controllable doping of hole transport layers using photocatalytic solvents was adopted, and the hole transport layer films prepared by this method were applied to perovskite solar cells, which greatly improved the batch and repeatability of the devices.

[0069] Further monitoring was conducted on the device efficiency of Example 1 and Comparative Example 1 as a function of aging time at 25°C and ~50% RH. Figure 5 The invention demonstrates a rapid and controllable doping method for hole transport layers using photocatalytic solvents. When the hole transport layer film prepared by this method is applied to a perovskite solar cell, the efficiency remains above 95% after 936 hours under the aging conditions, while the comparative example only retains the initial 31.5%. This indicates that the stability of the device is significantly improved after the method of this invention is applied.

[0070] To further explore the beneficial technical effects of the photocatalytic solvent-based rapid and controllable doping of hole transport layers in this invention, a series of hole transport layers were prepared by varying the UV pretreatment time (0-12 min, e.g., 0 min, 1 min, 3 min, 5 min, 10 min, 12 min, etc.) of the hole transport layer precursor solution in Example 1. Simultaneously, the hole transport layer precursor solution in Comparative Example 1 was used as a control group, and similar UV pretreatment with different irradiation times (0-12 min, e.g., 0 min, 5 min, 10 min, etc.) was performed before deposition into a thin film. The UV-Vis absorption curves of the hole transport layer precursor solutions after pretreatment with different irradiation times are shown below. Figure 6 As shown, the peak intensity of the hole transport layer precursor solution in Example 1 significantly increased at 525 nm under illumination with varying illumination time. This indicates an increase in the content of spiro-OMeTAD oxidative free radicals generated by photocatalytic doping, suggesting: 1) Improved hole mobility. More oxidation state peaks imply higher carrier concentration and conductivity, leading to smoother hole transport. 2) Better energy level matching. Sufficient oxidation can finely modulate the HOMO energy level of Spiro-OMeTAD, making it more compatible with the valence band energy level of the perovskite layer, reducing the energy barrier for hole injection, thereby improving the open-circuit voltage and fill factor of the device, ultimately achieving higher photoelectric conversion efficiency. In contrast, Comparative Example 1 did not show a significant improvement with varying illumination time.

[0071] Furthermore, based on the preparation methods of Example 1 and Comparative Example 1, only the pretreatment illumination (UV light) time of the hole transport layer precursor solution before deposition was changed (0 min, 5 min, or 10 min) or oxidation under no-light (UV light) conditions for 24 hours (dark drying oven environment). A series of experimental and control group samples were finally prepared, and the photoelectric conversion efficiency of the obtained samples (perovskite solar cell devices with FAPbI3 type absorber layer) is summarized in Table 2. It can be seen that for the control group conditions under conventional doping methods, simply applying illumination (0 min, 5 min, 10 min) cannot achieve a significant improvement in device efficiency; the control group samples still need to be placed in a dark drying oven environment for 24 hours of oxidation to achieve the final device efficiency. However, for the experimental group of this invention, the hole transport layer is rapidly and controllably doped using a photocatalytic solvent, achieving efficient doping and improving device efficiency after a short period (e.g., 1-10 min) of illumination treatment. The data comparison also shows that the rapid and controllable doping method using photocatalytic solvents achieves a higher efficiency than the control group using conventional doping methods in 24 hours of oxidation. Moreover, the experimental group can achieve the same efficiency as 24 hours of oxidation with only 10 minutes of illumination. This indicates that the method of the present invention significantly improves the controllability and efficiency of device fabrication.

[0072] Table 2

[0073]

[0074] While specific embodiments of the present invention have been described above, those skilled in the art should understand that these are merely illustrative examples, and various changes or modifications can be made to these embodiments without departing from the principles and essence of the present invention. The scope of protection of the present invention is defined only by the appended claims.

Claims

1. A method for preparing a hole transport layer using photocatalytic solvent with rapid and controllable doping, characterized in that, Includes the following steps: S1. Ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt and spiro-OMeTAD powder are uniformly dissolved in chlorobenzene at a ratio of 1g: 1.5~6g to prepare a precursor solution for the hole transport layer. S2. The precursor solution from step S1 is pretreated by ultraviolet light and then deposited to form a film to obtain a hole transport layer.

2. The method for preparing a hole transport layer using photocatalytic solvent with rapid and controllable doping according to claim 1, characterized in that, Step S1 specifically includes: (1) Prepare a spiro-OMeTAD solution by mixing spiro-OMeTAD powder with chlorobenzene solvent at a ratio of 1g:12~24mL; (2) Prepare an ETPTFSI solution by mixing ethyltriphenylphosphine bis(trifluoromethanesulfonyl)imide salt with chlorobenzene solvent at a ratio of 1 g: 2.30~2.75 mL; (3) The precursor solution of the hole transport layer is obtained by mixing ETPTFSI solution and spiro-OMeTAD solution in a volume ratio of 1:7.3~24.

0.

3. The method for preparing a hole transport layer using photocatalytic solvent with rapid and controllable doping according to claim 1, characterized in that, The pretreatment involves irradiation with ultraviolet light for 1 to 30 minutes.

4. The method for preparing a hole transport layer using a photocatalytic solvent with rapid and controllable doping according to claim 1, characterized in that, In step S2, a coating process is used to deposit a film.

5. The method for preparing a hole transport layer using photocatalytic solvent with rapid and controllable doping according to claim 4, characterized in that, The coating process is one of spin coating, scraping coating, or spray coating.

6. A hole transport layer, characterized in that, It is prepared by the preparation method according to any one of claims 1-5.

7. The application of the hole transport layer according to claim 6 in perovskite solar cells.

8. A perovskite solar cell, characterized in that, It is either a nip formal structure or a pin inverse structure, wherein: The formal structure of the nip includes a transparent conductive substrate, a deposited electron transport layer, a perovskite light-absorbing layer, a hole transport layer as described in claim 6, and an electrode arranged sequentially. The pin inverted structure includes a transparent conductive substrate, a hole transport layer as described in claim 6, a perovskite light-absorbing layer, a deposited electron transport layer, and an electrode arranged sequentially. The perovskite light-absorbing layer is a perovskite thin film.

9. The perovskite solar cell according to claim 8, characterized in that, The transparent conductive substrate is FTO glass or ITO glass with a thickness of 10nm~500nm; And / or, the electron transport layer is one or a combination of several of tin dioxide, titanium dioxide, zinc oxide, isomethyl [6,6]-phenyl-C61-butyrate, and fullerene, with a thickness of 10 nm to 400 nm; And / or, the perovskite light-absorbing layer is FAPbI3, MAPbI3, Cs 0.05 (FA 0.83 MA 0.17 ) 0.95 Pb(Br 0.17 I 0.83 At least one of the following three, with a thickness of approximately 600-800 nm; And / or, the hole transport layer has a thickness of 10nm~400nm; And / or, the electrode is a metal electrode or a carbon electrode, wherein the metal electrode is gold or silver.

10. The perovskite solar cell according to claim 8, characterized in that, The perovskite thin film is formed using one of the following methods: one-step spin coating, two-step spin coating, one-step scraping coating, two-step scraping coating, one-step spraying coating, two-step spraying coating, or slot coating.

Images