A semiconductor process cavity assembly and semiconductor equipment

Abstract

This invention discloses a semiconductor process cavity assembly and semiconductor equipment, relating to the field of semiconductor equipment technology. The semiconductor process cavity assembly forms a process chamber inside its process cavity. A gas filling pipeline is connected to the process chamber, including a main gas filling branch and a fine-tuning gas filling branch. A coarse gas flow rate adjustment valve is provided on the main gas filling branch, and a fine gas flow rate adjustment valve is provided on the fine-tuning gas filling branch. Either the coarse or fine gas flow rate adjustment valve is selectively activated. When the real-time gas pressure value within the process chamber is less than a preset pressure value, the coarse gas flow rate adjustment valve opens and the fine gas flow rate adjustment valve closes. When the real-time pressure value within the process chamber is greater than or equal to the preset pressure value but less than a target pressure value, the coarse gas flow rate adjustment valve closes and the fine gas flow rate adjustment valve opens, until the difference between the gas pressure and the target pressure value meets a preset condition. The gas flow rate allowed through the fine-tuning gas filling branch is less than the gas flow rate allowed through the main gas filling branch, and the preset pressure value is lower than atmospheric pressure.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a semiconductor process cavity assembly and semiconductor equipment. Background Technology

[0002] Electroplating equipment is crucial in the fields of advanced metal interconnects and advanced packaging in semiconductors. Its primary function is to deposit metal layers onto characteristic shapes on the wafer surface, including TSV vias, bumps, and RDLs (rewiring lines). Before entering critical processes such as electroplating, wafers typically undergo pre-treatment steps such as pre-cleaning and pre-wetting to remove surface contaminants and enhance surface hydrophilicity. This is essential for ensuring the uniformity, adhesion, and final yield of subsequent thin film deposition or electroplating, making it an indispensable key step before electroplating.

[0003] To achieve drying in a vacuum environment or pretreatment in a specific atmosphere, existing semiconductor equipment often employs a sealable process chamber. During pretreatment, the process chamber is first sealed, and its interior is evacuated to a negative pressure state using a vacuum system. After pretreatment, gas is rapidly injected into the process chamber through an inflation line to restore its internal pressure to atmospheric pressure, allowing for safe opening of the chamber to handle wafers. In practice, the process of restoring atmospheric pressure is typically completed within seconds. However, rapid inflation can easily lead to overcharging, where gas continues to be introduced even after the internal pressure has reached atmospheric pressure. Overcharging creates positive pressure inside the process chamber, which acts on the inner wall, generating an outward thrust. This often causes problems such as chamber shaking and abnormal noises, and in severe cases, may even lead to chamber damage or explosion, posing serious safety hazards. Summary of the Invention

[0004] The purpose of this invention is to provide a semiconductor process cavity assembly and semiconductor equipment to achieve precise control of the charging gas flow rate in the process cavity, thereby reducing the shaking, abnormal noise, and safety risks of the process cavity caused by overcharging.

[0005] To achieve this objective, the present invention adopts the following technical solution:

[0006] A semiconductor process cavity assembly, comprising:

[0007] The process cavity is formed inside the process chamber.

[0008] An inflation pipeline is connected to the process chamber. The inflation pipeline includes a main inflation branch and a fine-tuning inflation branch arranged in parallel. The inflation pipeline of the main inflation branch is equipped with a coarse gas flow rate adjustment valve, and the inflation pipeline of the fine-tuning inflation branch is equipped with a fine gas flow rate adjustment valve. The coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve are configured to selectively conduct.

[0009] When the real-time gas pressure value in the process chamber is less than the preset pressure value, the gas flow rate coarse adjustment valve is opened and the gas flow rate fine adjustment valve is closed, so as to charge the process chamber with gas through the main charging branch.

[0010] When the real-time pressure value in the process chamber is greater than or equal to the preset pressure value and less than the target pressure value, the coarse gas flow rate adjustment valve is closed and the fine gas flow rate adjustment valve is opened to continue to fill the process chamber with gas through the fine-tuning gas filling branch until the difference between the gas pressure in the process chamber and the target pressure value meets the preset condition.

[0011] The gas flow rate allowed through the fine-tuning inflation branch is less than that allowed through the main inflation branch, and the preset pressure value is less than atmospheric pressure.

[0012] As an alternative to the semiconductor process cavity assembly, it also includes:

[0013] The top cover is located above the process cavity and is used to move downward to seal the opening above the process cavity or to move upward to open the opening above the process cavity.

[0014] Two through holes are provided through the upper cover;

[0015] The inflation pipe of the main inflation branch is connected to the interior of the process cavity through one of the through holes, and the inflation pipe of the fine-tuning inflation branch is connected to the interior of the process cavity through the other through hole.

[0016] As an alternative to the semiconductor process cavity assembly, the gas flow rate coarse adjustment valve includes a first switching valve, which is used to control the switching of the main gas filling branch.

[0017] The gas flow rate fine-tuning valve includes a second switching valve, which is used to control the switching of the fine-tuning inflation branch.

[0018] As an alternative to the semiconductor process cavity assembly, the fine-tuning gas charging branch is equipped with a throttling device to ensure that the gas flow rate allowed through the fine-tuning gas charging branch is less than the gas flow rate allowed through the main gas charging branch.

[0019] As an optional embodiment of the semiconductor process cavity assembly, the gas flow rate fine-tuning valve is a proportional regulating valve, used to adjust the gas flow rate in the fine-tuning gas filling branch after being opened;

[0020] Alternatively, the gas flow rate fine-tuning valve is a needle valve, and the gas flow rate of the fine-tuning inflation branch is adjusted by adjusting the valve opening size of the needle valve.

[0021] As an alternative to the semiconductor process cavity assembly, a buffer chamber is provided upstream of the gas filling pipeline, which is used to stabilize the gas source pressure.

[0022] As an optional embodiment of the semiconductor process cavity assembly, the preset pressure value is greater than or equal to 0.9 times the atmospheric pressure.

[0023] A semiconductor device includes a semiconductor process chamber assembly as described in any of the above embodiments and a pressure sensor, the pressure sensor being used to detect the gas pressure within the process chamber in real time.

[0024] As an alternative to the semiconductor device, a control unit is also included. Both the coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve are electrically connected to the control unit. The pressure sensor is communicatively connected to the control unit. The control unit is configured to:

[0025] The gas flow rate coarse adjustment valve and the gas flow rate fine adjustment valve are selectively controlled based on the gas pressure detected by the pressure sensor, and the opening degree of the gas flow rate fine adjustment valve is also controlled.

[0026] After the gas flow rate fine-tuning valve is opened, the control unit is further configured to:

[0027] Based on the pressure rise rate detected by the pressure sensor, the opening of the gas flow rate fine adjustment valve is adjusted so that the pressure rise rate is less than or equal to a preset safety threshold.

[0028] As an alternative to the semiconductor device, the control unit is further configured to: reduce the opening of the gas flow rate fine-tuning valve or intermittently close the gas flow rate fine-tuning valve when the pressure rise rate is greater than the preset safety threshold.

[0029] The beneficial effects of this invention are:

[0030] The semiconductor process cavity assembly and semiconductor equipment provided by this invention, by setting the gas filling pipeline as a main gas filling branch and a fine-tuning gas filling branch in parallel, divides the process of restoring the process cavity from negative pressure to atmospheric pressure into two stages during the gas filling process. In the negative pressure stage, which is much lower than atmospheric pressure, the main gas filling branch is opened, and the gas flow rate coarse adjustment valve on the gas filling pipeline of the main gas filling branch is used to control it to achieve rapid pressure increase at a large flow rate, ensuring production efficiency. When the pressure rises to a value greater than or equal to the preset pressure value but less than the target pressure value, the gas filling is switched to the fine-tuning gas filling branch. The gas flow rate fine adjustment valve adjusts the gas filling pipeline of the fine-tuning gas filling branch to slowly and gently fill the gas at a smaller gas flow rate. This allows for precise control of the pressure increase rate and final pressure when approaching the target pressure value, effectively suppressing pressure overshoot and airflow turbulence caused by excessively fast gas flow rate at the end of the filling process. This eliminates the safety risks such as violent shaking, abnormal noise, and even explosion of the process cavity caused by this, while taking into account both the filling efficiency and the stability and safety of the process cavity restoring to atmospheric pressure. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the structure of a semiconductor device provided in an embodiment of the present invention.

[0032] In the picture:

[0033] 1. Process cavity;

[0034] 2. Inflation piping; 21. Main inflation branch; 22. Fine-tuning inflation branch;

[0035] 3. First switching valve;

[0036] 4. Second switching valve;

[0037] 5. Needle valve;

[0038] 6. Pressure sensor;

[0039] 7. Top cover. Detailed Implementation

[0040] Embodiments of the present invention are described in detail below. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0041] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance. The terms "first position" and "second position" refer to two different positions.

[0042] Unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to fixed connections or detachable connections; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; and connections within two components or interactions between two components. Those skilled in the art can understand the specific meaning of these terms in this invention based on the specific circumstances.

[0043] Unless otherwise expressly specified and limited, "above" or "below" a second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of a second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" of a second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0044] The technical solution of the present invention will be further described below with reference to the accompanying drawings and specific embodiments.

[0045] like Figure 1 As shown, this embodiment provides a semiconductor device, including a semiconductor process chamber assembly and a vacuum system. The semiconductor process chamber assembly includes a process chamber 1 and a gas filling pipeline 2. The process chamber 1 forms a process cavity inside. The gas filling pipeline 2 is connected to the process cavity and is used to fill the process cavity with gas. The vacuum system is connected to the process cavity and is used to evacuate the process cavity, so that the process cavity is in a negative pressure state for pre-processing semiconductor components such as wafers. After the pre-processing is completed, gas is quickly filled into the process cavity through the gas filling pipeline 2 to restore the process cavity to atmospheric pressure, so that the process chamber 1 can be safely opened to pick up and put in the wafer.

[0046] This embodiment also provides a semiconductor process cavity assembly applied to the aforementioned semiconductor equipment. The gas filling pipeline 2 includes a main gas filling branch 21 and a fine-tuning gas filling branch 22 arranged in parallel. A coarse gas flow rate adjustment valve is provided on the gas filling pipe of the main gas filling branch 21, and a fine gas flow rate adjustment valve is provided on the gas filling pipe of the fine-tuning gas filling branch 22. The coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve are configured to selectively conduct. When the process cavity is under negative pressure or less than a preset pressure value, the coarse gas flow rate adjustment valve is controlled to open and the fine gas flow rate adjustment valve is controlled to close, so as to fill the process cavity with gas through the main gas filling branch 21. When the real-time pressure value in the process cavity is greater than or equal to the preset pressure value and less than the target pressure value, the coarse gas flow rate adjustment valve is controlled to close and the fine gas flow rate adjustment valve is controlled to open, so as to continue filling the process cavity with gas through the fine-tuning gas filling branch 22 until the difference between the gas pressure in the process cavity and the target pressure value meets the preset condition. The preset condition is equal to or close to 0. Among them, the gas flow rate allowed to pass through the fine-tuning inflation branch 22 is less than the gas flow rate allowed to pass through the main inflation branch 21, and the preset pressure value is less than atmospheric pressure.

[0047] This semiconductor process chamber assembly, by configuring the gas filling pipeline 2 as a parallel main gas filling branch 21 and a fine-tuning gas filling branch 22, divides the process chamber's recovery from negative pressure to atmospheric pressure during the filling process into two stages. In the negative pressure stage, which is much lower than atmospheric pressure, the main gas filling branch 21 is activated, and the gas flow rate coarse adjustment valve on the gas filling pipeline of the main gas filling branch 21 controls it to achieve rapid pressure increase at a higher flow rate, ensuring production efficiency; when the pressure rises to a value greater than or equal to the preset pressure value but less than the target pressure value, the process chamber switches... Inflation is achieved by adjusting the inflation branch 22 through the gas flow rate adjustment valve, which regulates the inflation pipeline of the inflation branch 22 to slowly and gently inflate at a lower gas flow rate. This allows for precise control of the pressurization rate and final pressure when approaching the target pressure value, effectively suppressing pressure overshoot and airflow turbulence caused by excessively fast gas flow rate at the end of inflation. This eliminates safety risks such as violent shaking, abnormal noise, and even explosion of the process chamber 1 caused by this, while also taking into account inflation efficiency and the stability and safety of restoring atmospheric pressure in the process chamber.

[0048] In this embodiment, the target pressure is atmospheric pressure, and the preset pressure is greater than or equal to 0.9 times atmospheric pressure. This allows the pressure in the process chamber to recover during the process. In the first stage, the main inflation branch 21 with a high flow rate can efficiently complete at least 90% of the pressurization, minimizing the long duty cycle pressurization time. In the second stage, less than 10% of the pressurization margin is left to be completed by the fine-tuning inflation branch 22 with a low flow rate. At this time, because the pressure difference at the end of the inflation is extremely small, the fine-tuning inflation branch 22 can approach atmospheric pressure with an extremely low flow rate and a very gentle speed. Even if there is a slight delay or fluctuation in control, the absolute pressure overshoot is limited to an extremely low level, making it almost impossible to exceed atmospheric pressure and generate overpressure shock. This reduces the risk of shaking, abnormal noise, and explosion in the process chamber 1. At the same time, the fine-tuning stage takes very little time and has almost no impact on the overall repressurization efficiency, achieving a balance between safety and production efficiency.

[0049] In some embodiments, the preset pressure value can be greater than or equal to 0.95 times the atmospheric pressure, wherein different values ​​can be designed to meet the technical requirements of this embodiment.

[0050] In one embodiment, the semiconductor process cavity assembly further includes a top cover 7 and two through holes. The top cover 7 is disposed above the process cavity 1 and is used to move downward to seal the opening above the process cavity 1 or to move upward to open the opening above the process cavity 1. The two through holes are disposed through the top cover 7. The inflation pipe of the main inflation branch 21 is connected to the inside of the process cavity 1 through one of the through holes, and the inflation pipe of the fine-tuning inflation branch 22 is connected to the inside of the process cavity 1 through the other through hole. The main inflation branch 21 with a high flow rate and the fine-tuning inflation branch 22 with a low flow rate are introduced into the process cavity through the two independent through holes on the top cover 7, so that when the gas flow rate fine-tuning valve is closed, its downstream pipeline is in a static and closed state. When switching to the fine-tuning stage, the gas can be immediately and smoothly output at a preset small flow rate, unaffected by any residual turbulence of the large flow rate in the front section, thereby ensuring relatively stable pressure regulation when close to atmospheric pressure.

[0051] Specifically, a sealing element is provided between the upper cover 7 and the process cavity 1 to ensure the sealing between the upper cover 7 and the process cavity 1 after the upper cover 7 moves downward and comes into contact with the process cavity 1. When the process cavity is filled with gas to the target pressure value, the gas pressure in the process cavity is the same as the atmospheric pressure, and the upper cover 7 can move upward to open the opening above the process cavity 1, thereby allowing the wafer and other semiconductor components to be placed or removed.

[0052] In one embodiment, a buffer chamber is provided upstream of the inflation line 2 to stabilize the gas source pressure. Specifically, the ends of the main inflation branch 21 and the fine-tuning inflation branch 22 furthest from the top cover 7 are both connected to the gas source through the buffer chamber. During the rapid pressurization phase at a high flow rate, rapid inflation with a large flow rate can easily cause an instantaneous pressure drop and pipeline pulsation upstream of the main inflation branch 21. The buffer chamber, as a sufficiently large gas accumulator, can smooth out the sudden pressure drop during instantaneous high-flow-rate extraction, ensuring stable driving force at the front end of the main inflation branch 21. This shortens the pressurization time and avoids mechanical vibration and abnormal noise caused by sudden changes in flow rate at the gas flow rate coarse-tuning valve. Because the fine-tuning inflation branch 22 allows for extremely small flow rates and very low openings, it is extremely sensitive to any slight pulsation in the driving pressure. The presence of the buffer chamber filters out gas source pressure fluctuations into a nearly constant static pressure, enabling the small opening of the gas flow rate fine-tuning valve to output an extremely stable, pulsation-free laminar flow. This avoids pressure overshoot caused by a sudden increase in flow rate in the fine-tuning inflation branch 22 due to upstream pressure fluctuations, thereby fundamentally eliminating the risk of cavity shaking, abnormal noise, and explosion, and ensuring the final goal of the process chamber smoothly and safely returning to atmospheric pressure.

[0053] In one embodiment, the coarse gas flow rate adjustment valve includes a first switching valve 3, which controls the switching of the main inflation branch 21. When open, the first switching valve 3 allows gas to pass through at a relatively high flow rate, and when closed, it completely cuts off the main inflation branch 21. The fine gas flow rate adjustment valve includes a second switching valve 4, which controls the switching of the fine-tuning inflation branch 22. The fine-tuning inflation branch 22 is equipped with a throttling device to ensure that the gas flow rate allowed through the fine-tuning inflation branch 22 is less than the gas flow rate allowed through the main inflation branch 21.

[0054] Specifically, the first switching valve 3 and the second switching valve 4 can be normally closed solenoid valves of the same type, which offer rapid response and low cost. The throttling device can be a fixed orifice plate or capillary tube, etc., and its orifice diameter can be pre-calculated and selected based on the process chamber volume and the required fine-tuning pressure boosting rate. The second switching valve 4 and the throttling device can be connected in series along the gas flow direction, or the throttling device can be integrated into the valve body outlet end of the second switching valve 4.

[0055] In one embodiment, the gas flow rate fine-tuning valve is a proportional control valve, used to adjust the gas flow rate on the fine-tuning charging branch 22 after opening. The proportional control valve can continuously and smoothly adjust the valve orifice flow area within a very small opening range, outputting a small flow rate that precisely matches the demand.

[0056] In one embodiment, the gas flow rate fine-tuning valve is a needle valve 5. The gas flow rate of the fine-tuning charging branch 22 is adjusted by regulating the valve opening size of the needle valve 5. The valve core of the needle valve 5 is a slender cone shape, and the valve seat is a matching cone hole. By finely adjusting the valve core stroke axially, continuous and high-resolution changes in the flow area can be achieved within a very small opening range. This characteristic allows the gas flow rate during the fine-tuning stage to be set to an extremely small constant value, perfectly matching the small pressure difference close to atmospheric pressure.

[0057] To monitor the gas pressure inside the process chamber in real time, the semiconductor device also includes a pressure sensor 6. The pressure sensor 6 is used to detect the gas pressure inside the process chamber in real time. The upper cover 7 is provided with a connection port, and the pressure sensor 6 is connected to the upper cover 7 through the connection port, so that the detection head of the pressure sensor 6 extends into the process chamber to detect the gas pressure. The instrument part of the pressure sensor 6 is located outside the process chamber 1 and is used to display the gas pressure value.

[0058] The semiconductor device also includes a control unit. Both the coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve are electrically connected to the control unit. The pressure sensor 6 is communicatively connected to the control unit. The control unit is configured to selectively control the opening and closing of the coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve based on the gas pressure detected by the pressure sensor 6, and to control the opening degree of the fine gas flow rate adjustment valve.

[0059] During inflation, based on the real-time gas pressure detected by pressure sensor 6, the control unit selectively controls the opening and closing of the coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve to switch between the coarse inflation stage and the fine inflation stage. Specifically, when the real-time gas pressure does not reach the preset pressure value, the control unit keeps the coarse gas flow rate adjustment valve open and the fine gas flow rate adjustment valve closed. When the real-time gas pressure reaches or exceeds the preset pressure value but is less than the target pressure value, the control unit closes the coarse gas flow rate adjustment valve and opens the fine gas flow rate adjustment valve, so that the fine gas flow rate adjustment valve is open at the initial preset opening degree.

[0060] After the gas flow rate fine-tuning valve opens, the control unit is further configured to: adjust the opening of the gas flow rate fine-tuning valve according to the pressure rise rate detected by the pressure sensor 6, so that the pressure rise rate is less than or equal to a preset safety threshold. When the pressure rise rate is greater than the preset safety threshold, the control unit controls the opening of the gas flow rate fine-tuning valve to decrease, thereby reducing the gas flow rate in the fine-tuning charging branch 22 until the pressure rise rate falls back to within the preset safety threshold. When the pressure rise rate is less than or equal to the preset safety threshold, the control unit controls the current opening of the gas flow rate fine-tuning valve to remain unchanged, so that the gas pressure in the process chamber smoothly approaches and reaches atmospheric pressure.

[0061] It should be noted that the preset safety threshold is set in advance based on the volume, structural strength, and other conditions of the process cavity 1, or obtained through experimental testing.

[0062] Furthermore, the control unit is also configured to reduce the opening of the gas flow rate fine adjustment valve or intermittently close the gas flow rate fine adjustment valve when the pressure rise rate is greater than a preset safety threshold.

[0063] Specifically, based on the difference between the pressure rise rate and the preset safety threshold, the control unit outputs a corresponding reduction signal to the gas flow rate fine-tuning valve according to a preset PID control algorithm, causing the valve orifice flow area to shrink linearly. The larger the difference, the faster the shrinkage rate. This process is continuous; the airflow remains open, but the flow rate is dynamically reduced. Alternatively, the control unit continuously monitors the real-time pressure rise rate. Whenever its instantaneous value reaches or exceeds the preset safety threshold, it immediately outputs a shut-off signal; when the pressure rise rate falls back below the preset safety threshold, it outputs an open signal again, forming an adaptive pulse-type gas supply logic of "stopping upon reaching the top and reopening upon falling back."

[0064] During the inflation fine-tuning stage, the pressure difference between the inside and outside of the process chamber is already extremely small. Any slight increase in airflow could cause the pressure to immediately exceed atmospheric pressure. By controlling the rate of pressure rise and using closed-loop limiting, it is ensured that at any time, the rate of pressure increase will not exceed the gradual change limit that the structure of process chamber 1 can withstand or that is designed to allow, thus eliminating pressure overshoot and avoiding the risk of mechanical vibration, seal fatigue failure, or even explosion caused by overpressure impact.

[0065] The above description is only a preferred embodiment of the present invention. For those skilled in the art, there will be changes in the specific implementation and application scope based on the ideas of the present invention. The content of this specification should not be construed as a limitation of the present invention.

Claims

1. A semiconductor process cavity assembly, characterized in that, include: Process cavity (1), the interior of which forms a process cavity; An inflation pipeline (2) is connected to the process chamber. The inflation pipeline (2) includes a main inflation branch (21) and a fine-tuning inflation branch (22) arranged in parallel. A coarse gas flow rate adjustment valve is provided on the inflation pipeline of the main inflation branch (21), and a fine gas flow rate adjustment valve is provided on the inflation pipeline of the fine-tuning inflation branch (22). The coarse gas flow rate adjustment valve and the fine gas flow rate adjustment valve are configured to selectively conduct. When the real-time gas pressure value in the process chamber is less than the preset pressure value, the gas flow rate coarse adjustment valve is opened and the gas flow rate fine adjustment valve is closed, so as to charge the process chamber with gas through the main charging branch (21). When the real-time pressure value in the process chamber is greater than or equal to the preset pressure value and less than the target pressure value, the gas flow rate coarse adjustment valve is controlled to close and the gas flow rate fine adjustment valve is controlled to open, so as to continue to fill the process chamber with gas through the fine adjustment filling branch (22) until the difference between the gas pressure in the process chamber and the target pressure value meets the preset condition. The gas flow rate allowed through the fine-tuning inflation branch (22) is less than the gas flow rate allowed through the main inflation branch (21), and the preset pressure value is less than atmospheric pressure.

2. The semiconductor process cavity assembly according to claim 1, characterized in that, Also includes: The top cover (7) is located above the process cavity (1) and is used to move downward to seal the opening above the process cavity (1) or to move upward to open the opening above the process cavity (1). Two through holes are provided through the upper cover (7); The inflation pipe of the main inflation branch (21) is connected to the interior of the process cavity (1) through one of the through holes, and the inflation pipe of the fine-tuning inflation branch (22) is connected to the interior of the process cavity (1) through the other through hole.

3. The semiconductor process cavity assembly according to claim 1, characterized in that, The gas flow rate coarse adjustment valve includes a first switching valve (3), which is used to control the switching of the main gas filling branch (21); The gas flow rate fine-tuning valve includes a second switching valve (4), which is used to control the switching of the fine-tuning inflation branch (22).

4. The semiconductor process cavity assembly according to claim 3, characterized in that, The fine-tuning inflation branch (22) is equipped with a throttling device so that the gas flow rate allowed through the fine-tuning inflation branch (22) is less than the gas flow rate allowed through the main inflation branch (21).

5. The semiconductor process cavity assembly according to claim 1, characterized in that, The gas flow rate fine adjustment valve is a proportional adjustment valve, used to adjust the gas flow rate on the fine adjustment inflation branch (22) after it is opened; Alternatively, the gas flow rate fine-tuning valve is a needle valve (5), and the gas flow rate of the fine-tuning inflation branch (22) is adjusted by adjusting the valve port size of the needle valve (5).

6. The semiconductor process cavity assembly according to claim 1, characterized in that, The upstream of the inflation pipeline (2) is also provided with a buffer chamber, which is used to stabilize the gas source pressure.

7. The semiconductor process cavity assembly according to claim 1, characterized in that, The preset pressure value is greater than or equal to 0.9 times the atmospheric pressure.

8. A semiconductor device, characterized in that, Includes a semiconductor process chamber assembly as described in any one of claims 1-7 and a pressure sensor (6), wherein the pressure sensor (6) is used to detect the gas pressure inside the process chamber in real time.

9. The semiconductor device according to claim 8, characterized in that, It also includes a control unit, wherein the gas flow rate coarse adjustment valve and the gas flow rate fine adjustment valve are both electrically connected to the control unit, and the pressure sensor (6) is communicatively connected to the control unit. The control unit is configured to: The gas flow rate coarse adjustment valve and the gas flow rate fine adjustment valve are selectively controlled according to the gas pressure detected by the pressure sensor (6), and the opening degree of the gas flow rate fine adjustment valve is controlled. After the gas flow rate fine-tuning valve is opened, the control unit is further configured to: Based on the pressure rise rate detected by the pressure sensor (6), the opening of the gas flow rate fine adjustment valve is adjusted so that the pressure rise rate is less than or equal to a preset safety threshold.

10. The semiconductor device according to claim 9, characterized in that, The control unit is also configured to: reduce the opening of the gas flow rate fine adjustment valve or intermittently close the gas flow rate fine adjustment valve when the pressure rise rate is greater than the preset safety threshold.

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