Semiconductor device and power conversion device using the same

By designing specific connection structures and lead frame branches on the insulating substrate, the problems of inductance deviation and uneven switching losses in power semiconductor modules are solved, improving the reliability and switching efficiency of the modules. This makes them suitable for power control in industrial equipment, electric railway vehicles, automobiles, and home appliances.

CN122375221APending Publication Date: 2026-07-10HITACHI POWER SEMICON DEVICE LTD
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
HITACHI POWER SEMICON DEVICE LTD
Filing Date
2024-12-06
Publication Date
2026-07-10

AI Technical Summary

Technical Problem

In power semiconductor modules, when multiple power semiconductor components are connected in parallel, there are problems of inductance deviation and uneven switching losses, which affect reliability and switching speed. These problems have not been effectively solved in existing technologies, especially in applications using GaN and SiC components.

Method used

A semiconductor device structure is employed in which multiple power semiconductor elements are connected through an insulating substrate, a conductor layer pattern, and a lead frame. The structure utilizes independent gate wiring and specific lead frame branches to reduce inductance deviation and homogenize switching losses. It includes switching circuits and drive circuits on both high-voltage and low-voltage sides.

Benefits of technology

This reduces inductance deviation between power semiconductor components, improves the uniformity of switching losses and power cycle tolerance, and enhances the efficiency and reliability of semiconductor devices and power conversion devices.

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Abstract

The present invention provides a semiconductor device that, in a semiconductor device composed of multiple power semiconductor elements connected in parallel, reduces the inductance deviation generated between the power semiconductor elements, and balances the reduction of switching losses caused by high-speed switching and the improvement of power cycle tolerance caused by the uniformity of switching losses of each power semiconductor element. A semiconductor device includes a half-bridge circuit consisting of one or more first switches and second switches using power semiconductor elements connected in series. The device is characterized by comprising: an insulating substrate; a first conductor layer pattern, a second conductor layer pattern, and a third conductor layer pattern disposed on one side of the insulating substrate and electrically insulated from each other; a plurality of power semiconductor elements disposed on the first conductor layer pattern and connected in parallel; a lead frame connecting each of the plurality of power semiconductor elements to the second conductor layer pattern; individual gate wiring connecting the gate electrodes of each of the plurality of power semiconductor elements to the third conductor layer pattern; and a main terminal connected to the second conductor layer pattern. The lead frame has: a first connecting portion connected to the electrode surfaces of each of the plurality of power semiconductor elements; multiple branch portions of the lead frame; and a second connecting portion disposed at the end of the branch portion of the lead frame and connected to the second conductor layer pattern. When viewed from above the insulating substrate, the gate electrodes and the individual gate wirings are held between two of the lead frame branches.
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