First attempt to use e + Weyl fermions are described as beams / currents used for pumping / injecting semiconductor devices.

Abstract

The purpose of this beam source is to develop a positron microbeam, making it the first attempt to describe e + As a beam / current for pumping / injecting semiconductor devices. Furthermore, Type I: Positron beams possess high energy (up to hundreds of keV or even tens of MeV), but their range should follow the same limits as electrons, since electrons can be converted into positrons, both of which can be used as sources for pumping materials. This will prevent the formation of defects in positron-pumped materials, which would otherwise cause rapid degradation of material properties. Type II: The conversion to Weyl fermions, which are thought to carry charge through devices much faster than ordinary electrons. According to recent research, Weyl electrons carry current at least twice as fast as graphene electrons and at least 1000 times faster than electrons in ordinary semiconductors. This patent aims to advance research in this field by utilizing Weyl electrons as a beam / current for pumping / injecting semiconductor devices.

Description

Background of the Invention

[0001] This invention focuses on an innovative carrier source based on positron transport and Weyl fermions. The aim is to develop positron beam-pumped semiconductor devices based on the concept of "positron injection": Type I: positron source; and Type II: Weyl fermion (due to its high mobility).

[0002] This paper describes how to use antimatter particle beams to inspect semiconductor defects and apply them to pumping / injecting semiconductor devices. A laboratory-developed carrier source can operate in continuous wave (CW) and pulsed modes to excite (Al,Ga)N systems. Electron-positron pairs (positrons being antimatter electrons) can be generated using sufficient accelerating particles or gamma rays.

[0003] Traditional heterostructure semiconductors mostly inject only a single type of charge (such as electrons), while modern semiconductors rely on multiple charge types to achieve superior transport characteristics in the active layer. Their advantage lies in the rapid radiative lifetime resulting from the positron charge characteristic.

[0004] The goal of this project is to develop a positron microbeam, as the first attempt to use e + Weyl fermions are described as beams / currents used for pumping / injecting into semiconductor devices. Therefore, this concept stems from utilizing charge carriers other than electrons to address the possibility of electron charge states flipping to electrons. + The problem. Invention Overview

[0005] Based on the need for improved current injection for various particle types, this technology aims to provide a concept for novel carrier generators for optoelectronic pumping and injection devices.

[0006] This study improves current injection by using particles other than electrons. The idea originates from condensed matter physics, which proposes a technique to realize positrons as charge carriers in semiconductors using local emission sources.

[0007] For example, a radioactive source (such as a Na source) is incident on a tungsten blade moderator, thereby generating a positron flow, tunneling effect, and laser-driven high-quality positrons entering the semiconductor device.

[0008] Furthermore, tantalum arsenide (TaAs) has been found to have great potential as a Weyl particle host, with applications in cutting-edge technologies. By injecting different charge carriers and observing their behavior in semiconductors, solid-state optoelectronics with high energies (100-500 keV, up to tens of MeV) of different charge carrier injection will be developed.

[0009] Clearly, these different carrier sources have a wider operating range and output characteristics due to their different emission principles, thus enabling the acquisition of greater positron kinetic energy.

[0010] The transition to Weyl fermions enables charge to be transported through devices much faster than ordinary electrons, thus unlocking the potential of new materials with anomalous transport properties. Brief description of the attached figures

[0011] Figure 1(a) Types I and II: Beam-pumped UVC emitters.

[0012] Figure 1(b) Type I: Using ²²Na incident tungsten blades to generate e + .

[0013] Figure 1(c) Type II: TaAs as hosts for Weyl fermions. Detailed description

[0014] e + Weyl fermions are described as beams / currents used for pumping / injecting semiconductor devices: 1-Utilizing e + The Weyl fermion (quasi-particle) (see Figure 1(a)) originated from the concept of describing other charge carriers as beams / currents used in semiconductor pump / injection devices, aiming to advance semiconductor technology.

[0015] 2-Target of this beam source (see Figure 1(b)) Develop type I: positron microbeam source as an alternative source for electron beams and utilize the generation of γ-ray radiation inside semiconductor heterostructures; and type II (see Figure 1(c)): Weyl fermions, due to their high mobility.

[0016] Type I: High-energy positron beams (see Figure 1(a)) (up to hundreds of keV or even tens of MeV), but the limit should be consistent with the range of electrons, since electrons can be converted into positrons, both of which can be used as sources for pump materials.

[0017] This prevents defects from forming in positron-pumped materials and avoids rapid degradation of material properties.

[0018] Type II: Transition to Weyl fermions (see Figure 1(c)), which are thought to transfer charge through devices faster than ordinary electrons.

[0019] According to the latest research, Weyl electrons can carry current at least twice as fast as graphene electrons and at least 1,000 times faster than electrons in ordinary semiconductors.

Claims

1. Place e + Weyl fermions are described as beams / currents used for pumping / injecting semiconductor devices: Types I and II: Beam sources for pumping UVC emitters. Type I: Using ²²Na incident on W blades to produce e + ; Type II: TaAs as hosts for Weyl fermions.

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