A method for purifying graphite by cascade plasma and high-purity low-damage graphite powder
By employing a four-stage plasma treatment and pretreatment process, the problems of oxidation ablation and incomplete impurity removal in existing plasma graphite purification technologies are solved, resulting in the preparation of high-purity, low-damage graphite suitable for semiconductors and electronic devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MINMETALS EXPLORATION & DEVELOPMENT CO LTD
- Filing Date
- 2026-06-15
- Publication Date
- 2026-07-17
AI Technical Summary
Existing plasma graphite purification technologies suffer from problems such as oxidation and ablation, generation of highly toxic byproducts, incomplete removal of impurities, and structural damage, making it difficult to achieve the preparation of high-purity graphite.
A four-stage plasma treatment method is adopted, which involves staged treatment under protective gas, oxidizing gas, fluorocarbon gas and reducing gas atmosphere, combined with acid washing and water washing steps, to precisely control the reaction at each stage, remove impurities on the graphite surface, between layers and in the lattice, and repair structural defects.
It has achieved the preparation of high-purity (≥99.88%) low-damage graphite, reducing the generation of highly toxic byproducts, lowering environmental pollution and safety risks, and is suitable for the semiconductor and electronic device fields.
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