A process gas supply system for a peteos apparatus and a peteos apparatus

Abstract

This application discloses a process gas supply system and the PETEOS equipment for semiconductor process gas supply technology. It includes: a liquid gas supply pipeline for introducing a liquid gas source; a vaporizer for vaporizing the liquid gas source to obtain a first process gas, the liquid gas supply pipeline being connected to the vaporizer via a liquid mass flow meter; a carrier gas supply pipeline for introducing a carrier gas, which is connected to the vaporizer via a first mass flow controller, the carrier gas and the first process gas being mixed in the vaporizer, and the vaporizer outputting a first mixed gas; and a first process gas input pipeline for introducing the first mixed gas into at least one chamber, its two ends being connected to the vaporizer and at least one chamber, respectively. This application achieves precise control of the process gas quality after vaporization of the liquid gas source through a coordinated control method using a liquid mass flow meter and the mixing of the carrier gas and the liquid gas source within the vaporizer, effectively improving process stability.

Description

Technical Field

[0001] This application relates to the field of semiconductor process gas supply technology, and in particular to a process gas supply system for PETEOS equipment and PETEOS equipment. Background Technology

[0002] In the semiconductor equipment field, a stable and precise supply of process gases is a core prerequisite for ensuring the normal operation of equipment and process quality, directly affecting the yield and performance of semiconductor products. PETEOS (Plasma Enhanced Tetraethyl Orthosilicate) equipment, as a key piece of equipment in semiconductor manufacturing, includes liquid gas sources in its process gases. This makes the design of its process gas supply system far more challenging than that of conventional semiconductor equipment. Existing technologies for PETEOS equipment still have many technical shortcomings that urgently need to be addressed in their process gas path systems.

[0003] Currently, in the handling of liquid gas sources in PETEOS equipment, the liquid gas source needs to undergo gasification before entering the equipment cavity, and is propelled by carrier gas to ensure supply stability. However, existing technologies lack precise vaporization control schemes. After passing through the vaporizer, the liquid gas source is prone to re-condensation due to temperature fluctuations, resulting in unstable gas supply quality and affecting process stability. At the same time, existing vaporization and gas supply control methods are difficult to achieve precise regulation of gas supply, and cannot meet the stringent requirements of PETEOS equipment for process parameters. Summary of the Invention

[0004] To address the problem of insufficient accuracy in controlling the supply of liquid gas in existing technologies, this application mainly provides a process gas supply system for PETEOS equipment and the PETEOS equipment itself.

[0005] To achieve the above objectives, the first technical solution adopted in this application is: to provide a process gas supply system for a PETEOS device, comprising: a liquid gas source supply pipeline for introducing a liquid gas source; a vaporizer for vaporizing the liquid gas source to obtain a first process gas, wherein the liquid gas source supply pipeline is connected to the vaporizer via a liquid mass flow meter; a carrier gas supply pipeline for introducing a carrier gas, wherein the carrier gas supply pipeline is connected to the vaporizer via a first mass flow controller, wherein the carrier gas and the first process gas are mixed in the vaporizer, and the vaporizer outputs a first mixed gas; and a first process gas input pipeline for introducing the first mixed gas into at least one chamber of the PETEOS device, wherein the two ends of the first process gas input pipeline are respectively connected to the vaporizer and at least one chamber.

[0006] The second technical solution adopted in this application is to provide a PETEOS device that utilizes the process gas supply system for PETEOS devices described in the first technical solution above for supplying process gas.

[0007] The beneficial effects that the technical solution of this application can achieve are as follows: This application designs a process gas supply system and PETEOS equipment for PETEOS equipment. By adopting a liquid mass flow meter and a coordinated control method of mixing carrier gas and liquid gas source in the vaporizer, the quality of process gas after vaporization of liquid gas source is accurately controlled, which effectively improves the stability of process parameters, ensures the consistency of semiconductor process, and meets the stringent requirements of PETEOS equipment for process parameters. Attached Figure Description

[0008] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0009] Figure 1 This is a schematic diagram of a specific embodiment of a process gas supply system for a PETEOS equipment according to this application; Figure 2 This is a schematic diagram of the pipeline structure of a specific embodiment of a process gas supply system for PETEOS equipment according to this application.

[0010] The accompanying drawings illustrate specific embodiments of this application, which will be described in more detail below. These drawings and descriptions are not intended to limit the scope of the concept in any way, but rather to illustrate the concept of this application to those skilled in the art through reference to particular embodiments. Detailed Implementation

[0011] The preferred embodiments of this application will now be described in detail with reference to the accompanying drawings, so that the advantages and features of this application can be more easily understood by those skilled in the art, thereby providing a clearer and more definite definition of the scope of protection of this application.

[0012] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes said element.

[0013] In the semiconductor equipment field, a stable and precise supply of process gases is a core prerequisite for ensuring normal equipment operation and process quality, directly affecting the yield and performance of semiconductor products. PETEOS (Plasma Enhanced Tetraethyl Orthosilicate Chemical Vapor Deposition) equipment, as a key piece of equipment in semiconductor manufacturing, utilizes plasma enhanced chemical vapor deposition (PECVD) technology to deposit silicon dioxide (SiO2) thin films on wafer surfaces using liquid gas TEOS (tetraethyl orthosilicate, Si(OC2H5)4) as a precursor. The liquid gas source makes the design of its process gas supply system far more complex than that of conventional semiconductor equipment, and existing technologies for the process gas path systems of PETEOS equipment still have many technical shortcomings that urgently need to be addressed.

[0014] Currently, in the handling of liquid gas sources in PETEOS equipment, the liquid gas source needs to undergo gasification before entering the equipment cavity, and is propelled by carrier gas to ensure supply stability. However, existing technologies lack precise vaporization control schemes. After passing through the vaporizer, the liquid gas source is prone to re-condensation due to temperature fluctuations, resulting in unstable gas supply quality and affecting process stability. At the same time, existing vaporization and gas supply control methods are difficult to achieve precise regulation of gas supply, and cannot meet the stringent requirements of PETEOS equipment for process parameters.

[0015] In terms of system structure design, existing PETEOS equipment generally suffers from limited installation space. The industry routinely uses a distributed pipeline connection method to build the process gas circuit system. This method not only occupies a lot of equipment space, resulting in a compact and redundant internal layout, but also greatly increases the difficulty of disassembling and assembling the gas circuit system, causing many inconveniences for daily maintenance, troubleshooting and component replacement, and significantly reducing the operation and maintenance efficiency of the equipment.

[0016] During equipment maintenance, PETEOS equipment requires shutdown for maintenance after a period of operation. However, toxic, flammable, and other hazardous gases may remain in the process gas pipelines. Incomplete purging and cleaning can easily lead to safety hazards. Currently, the industry commonly switches the gas or liquid source pipelines to clean gases such as argon through the plant control terminal to purge and clean the entire equipment pipeline. This process requires coordination among multiple units, is not only cumbersome and inefficient, but also prone to incomplete purging, failing to fully guarantee the safety and reliability of the maintenance process.

[0017] Furthermore, most existing PETEOS equipment has a dual-chamber or four-chamber structure. The uniform supply of process gases directly determines the process consistency of each chamber, thus affecting the uniformity of semiconductor products. However, the industry commonly adopts a gas distribution method that mixes the gases once and then directly introduces them into the equipment. This method is prone to deviations in the composition and flow rate of process gases in each chamber, resulting in inconsistent process effects in each chamber and affecting product quality stability.

[0018] In summary, the existing process gas path systems of PETEOS equipment have significant shortcomings in terms of liquid gas source vaporization control, system integration, ease of maintenance, and uniformity of gas distribution in multiple chambers, which cannot meet the requirements for efficient, safe, and stable operation of PETEOS equipment. Therefore, developing a process gas path system for PETEOS equipment that can solve the above-mentioned technical problems has important practical significance and application value.

[0019] In view of the many technical defects of the process gas circuit system of PETEOS equipment in the prior art, the present invention provides a highly integrated, easy-to-maintain, safe and efficient process gas supply system for PETEOS equipment, so as to achieve a high degree of system integration and solve the core technical defects of the prior art such as unstable vaporization of liquid gas source, low system integration, poor maintenance convenience, and uneven gas distribution in multiple chambers.

[0020] The technical solutions of this application and how they solve the aforementioned technical problems will be described in detail below with specific embodiments. The specific embodiments described below can be combined with each other to form new embodiments. The same or similar ideas or processes described in one embodiment may not be repeated in other embodiments. The embodiments of this application will now be described with reference to the accompanying drawings.

[0021] Figure 1 This application illustrates a specific embodiment of a process gas supply system for a PETEOS device.

[0022] exist Figure 1In the specific embodiment shown, this application discloses a process gas supply system for a PETEOS device, comprising: a liquid gas supply pipeline 101 for introducing a liquid gas source; a vaporizer 102 for vaporizing the liquid gas source to obtain a first process gas, wherein the liquid gas supply pipeline 101 is connected to the vaporizer 102 via a liquid mass flow meter 103; a carrier gas supply pipeline 104 for introducing a carrier gas, wherein the carrier gas supply pipeline 104 is connected to the vaporizer 102 via a first mass flow controller 105, wherein the carrier gas and the first process gas are mixed in the vaporizer 102, and the vaporizer 102 outputs a first mixed gas; and a first process gas input pipeline 106 for introducing the first mixed gas into at least one chamber 107 of the PETEOS device, wherein the two ends of the first process gas input pipeline 106 are respectively connected to the vaporizer 102 and at least one chamber 107.

[0023] exist Figure 1 In the specific embodiments shown, the process gas supply system for PETEOS equipment of this application achieves precise control of the amount of liquid gas entering the vaporizer by using a liquid mass flow meter to precisely control the amount of liquid gas entering the vaporizer, and by using a coordinated control method of mixing a predetermined flow rate of carrier gas with the vaporized liquid gas source gas in the vaporizer with the assistance of the carrier gas. This achieves precise control of the quality of the process gas after the liquid gas source is vaporized, effectively improves the stability of process parameters, ensures the consistency of semiconductor processes, and meets the stringent requirements of PETEOS equipment for process parameters.

[0024] exist Figure 1 In the specific embodiment shown, a liquid gas supply pipeline 101 is used to introduce a liquid gas source. The liquid gas supply pipeline 101 typically includes a manual valve and a diaphragm valve. The liquid gas source enters a liquid mass flow meter 103 through the manual valve and diaphragm valve. The liquid mass flow meter 103 regulates the flow rate of the liquid gas source and then delivers it to the vaporizer 102 for vaporization. A manual valve is a valve that relies on direct human operation to control its opening and closing or to regulate its flow rate, such as turning a handwheel or pulling a handle. Its core function is to provide direct and reliable pipeline control that does not rely on external energy sources such as electricity. A diaphragm valve uses an elastic, corrosion-resistant diaphragm as its opening and closing element. Common materials for the diaphragm are fluoroplastics or metal. It is a valve that cuts off or opens the fluid through the deformation of the diaphragm. Its core function is to provide ultra-high purity and zero-leakage sealing.

[0025] exist Figure 1 In the specific embodiment shown, the vaporizer 102 is used to vaporize the liquid gas source to obtain the first process gas. Specifically, the vaporizer is a steam generator, and it contains a solenoid valve to control the gas flow rate at its outlet.

[0026] exist Figure 1In the specific embodiment shown, a carrier gas supply line 104 is used to introduce a carrier gas. The carrier gas includes nitrogen (N2), argon (Ar), and helium (He), and different carrier gases can be selected according to the application scenario and process gas type. The carrier gas can be used as a dilution gas to mix with a high concentration of process gas, precisely reducing its concentration to the level required by the process. By adjusting the ratio of the carrier gas to the process gas participating in the reaction, the chemical reaction rate can be precisely controlled. An excessively fast reaction can lead to poor film uniformity and increased particle count; proper dilution can make the deposition process smoother, forming a high-quality film. The carrier gas supply line 104 typically includes a manual valve, a pressure regulating valve, a filter, a diaphragm valve, and a first mass flow controller 105. The carrier gas supply line 104 is connected to a vaporizer 102 via the first mass flow controller 105. After the carrier gas and the first process gas are mixed in the vaporizer 102, the vaporizer 102 outputs the first mixed gas.

[0027] In one specific embodiment of this application, the pipeline between the first mass flow controller 105 and the vaporizer 102, i.e. the carrier gas input pipeline, is equipped with a heating component and a high-temperature resistant diaphragm valve to heat the carrier gas to the temperature required by the vaporizer so that the carrier gas and the first process gas can be mixed more fully.

[0028] In one specific embodiment of this application, the heating assembly is wound around the outside of the carrier gas input pipeline.

[0029] In one specific embodiment of this application, a liquid mass flow meter is used to control the flow of a liquid gas source with a preset mass flow rate into the vaporizer. The liquid mass flow meter and the carrier gas with a preset gas flow rate in the vaporizer work together to control the gas flow rate of the first process gas in the first mixed gas. The liquid gas source enters the vaporizer after being precisely metered by the liquid flow meter. At this time, the carrier gas also enters the vaporizer after being precisely metered by the first mass flow controller (MFC). The vaporizer is equipped with a solenoid valve that can control the flow rate at the outlet. The system control signal is input through the liquid flow meter. By adopting a control method in which the liquid mass flow meter and the carrier gas are mixed together in the vaporizer, precise control of the mass of the reaction gas after vaporization is achieved, effectively improving the stability of process parameters and ensuring the consistency of semiconductor processes.

[0030] As an example, the liquid gas source is TEOS. Assuming a TEOS flow rate of 10 g / min is required, this signal is input to the liquid flow meter via a pressure controller (PC). The liquid flow meter then inputs this data to the vaporizer. The solenoid valve inside the vaporizer begins to regulate the outlet flow rate, while the first mass flow controller of the carrier gas can adjust the outlet flow rate according to the input flow rate. The two work together to achieve precise control of the first process gas flow rate after vaporization, which greatly improves the stability of process parameters.

[0031] In one specific embodiment of this application, a first mass flow controller is used to control the flow of carrier gas into the vaporizer at a preset flow rate. The first mass flow controller can precisely control the flow rate of the carrier gas, which is beneficial for mixing the carrier gas with the first process gas in the vaporizer, thereby improving the control of the vaporized first process gas.

[0032] In one specific embodiment of this application, a heating component is provided in the first process gas input pipeline. To prevent secondary condensation from occurring after the liquid gas source completes its gaseous conversion in the vaporizer due to pipeline temperature fluctuations, which could affect the gas supply quality and interfere with process stability, this application provides a heating component in the vaporizer outlet pipeline, i.e., the first process gas input pipeline. Through continuous and stable temperature control, the heating component adjusts in real time via system feedback to maintain a constant temperature within the pipeline, ensuring that the gaseous gas source remains stable at all times. This effectively prevents secondary condensation, further ensuring the stability and accuracy of the gas supply and meeting the stringent requirements of the PETEOS equipment for process parameters.

[0033] In one specific embodiment of this application, the heating component is wound around the outside of the first process gas inlet pipe.

[0034] exist Figure 1 In the specific embodiment shown, a first process gas input line 106 is used to introduce a first mixed gas into at least one chamber 107 of the PETEOS device. The two ends of the first process gas input line 106 are connected to a vaporizer 102 and at least one chamber 107, respectively. The first mixed gas includes a first process gas and a carrier gas. The first mixed gas is input into the chamber, and a plasma is generated using a radio frequency power supply to perform thin film deposition on the wafer.

[0035] In one specific embodiment of this application, the process gas supply system for a PETEOS device further includes: a second process gas supply line for introducing a second process gas; a second process gas input line for introducing the second process gas into at least one chamber; and at least one mixing component for mixing a first mixed gas and the second process gas. The first process gas input line and the second process gas input line are connected to at least one chamber via the at least one mixing component. The PETEOS device requires two process gases as reactants for thin film deposition on wafers. The second process gas supply line typically includes a manual valve, a pressure regulating valve, a filter, a diaphragm valve, and a mass flow controller. The second process gas is delivered to at least one chamber through the second process gas supply line and the second process gas input line and excited together with the first process gas to form plasma for thin film deposition. The second process gas and the first process gas need to be mixed using at least one mixing component before entering the reaction chamber to ensure uniform distribution of the various process gases within the chamber, thereby resulting in more uniform wafer thin film deposition.

[0036] In one specific embodiment of this application, when at least one chamber is multiple chambers, the method includes: at least one mixing component including a primary mixing component, a secondary mixing component, and multiple tertiary mixing components, wherein the number of multiple tertiary mixing components is equal to the number of multiple chambers; a first process gas input pipeline and a second process gas input pipeline are sequentially connected to the multiple chambers via the primary mixing component, the secondary mixing component, and the multiple tertiary mixing components, wherein the secondary mixing component is used to evenly distribute the primary mixed gas output from the primary mixing component according to the number of multiple tertiary mixing components.

[0037] Most existing PETEOS equipment adopts a dual-chamber or four-chamber structure. Uniform supply of process gases is crucial to ensuring process consistency in each chamber and improving the uniformity of silicon dioxide (SiO2) films. Currently, the industry commonly uses a gas distribution method where the gas is mixed once and then directly introduced into each chamber of the equipment. This can easily lead to deviations in the composition and flow rate of the process gases in each chamber, resulting in inconsistent process effects and affecting the quality stability of semiconductor products.

[0038] In this specific embodiment, this application employs a three-stage mixing and distribution method. The vaporized first process gas, TEOS source gas, and the second process gas, oxygen (O2), are mixed in a primary mixing component as close as possible to the chamber, ensuring even distribution. The gas after passing through the primary mixing component enters the secondary mixing component, i.e., the equalization component. The equalization component, through its internal structure, evenly distributes the incoming gas according to the number of tertiary mixing components, i.e., the number of chambers. Finally, the gas passing through the equalization component is mixed again in the tertiary mixing component before entering the chamber. This three-stage mixing ensures thorough mixing of the process gases, effectively guaranteeing the consistency of the process gas composition and flow rate entering each chamber, thereby ensuring process consistency in each chamber and improving the quality stability of the silicon dioxide (SiO2) thin film.

[0039] In one specific embodiment of this application, the process gas supply system for PETEOS equipment further includes: a first clean gas supply pipeline connected in series with a liquid gas source supply pipeline via a first check valve; a second clean gas supply pipeline connected in series with a second process gas supply pipeline via a second check valve; and a third clean gas supply pipeline connected in series with a carrier gas supply pipeline via a third check valve.

[0040] As an example, this application connects the clean gas supply pipeline directly in series with two process gas supply pipelines and a carrier gas supply pipeline, respectively. A one-way valve is connected in series between the two pipelines to ensure that the process gas does not flow back into the clean gas supply pipeline. This helps to make the pipeline purging and cleaning more thorough, control the concentration of residual gas in the pipeline within a safe range, and maximize the safety and reliability of the maintenance process.

[0041] In one specific embodiment of this application, the second clean gas supply line is equipped with a second mass flow controller, and the third clean gas supply line is equipped with a third mass flow controller. The clean gas supply line itself is equipped with a pressure regulating valve and a mass flow controller (MFC) to ensure that the pressure and flow rate of the clean gas supply line are controllable, thereby achieving automatic and precise switching between clean gas and process gas. This eliminates the need for multi-unit collaborative operation, simplifies the purging process, and improves operational efficiency.

[0042] In one specific embodiment of this application, the process gas supply system for PETEOS equipment adopts an integrated design. This application highly integrates the relevant components of the process gas path system into an Integrated Gas System (IGS). The IGS abandons the traditional decentralized pipeline connection mode, significantly reducing the space occupancy of the gas path system, optimizing the internal layout of the equipment, and making the equipment structure more compact and rational. Traditional pipeline connections use VCR (Vacuum Coupling Radius Seal) joints for sealing. To consider the welding process of VCR joints, a 10mm machining length must be reserved for the pipeline. Since the gas path of semiconductor equipment contains a large number of components, using pipeline connections for all of them would inevitably result in a huge waste of space. By eliminating VCR joints and changing the sealing method of each component, the IGS allows for a compact connection between components, reducing the distance between gas channels. At the same time, the integrated design significantly simplifies the disassembly and assembly process of the gas path system, facilitating routine maintenance, troubleshooting, and component replacement by staff, effectively improving equipment operation and maintenance efficiency and reducing operation and maintenance costs.

[0043] Figure 2 The piping structure of a specific embodiment of a process gas supply system for a PETEOS equipment is shown in this application.

[0044] exist Figure 2 In the specific embodiment shown, a process gas supply system for PETEOS equipment according to this application includes a liquid gas source supply pipeline, a liquid mass flow meter 42, a vaporizer 43, a first clean gas supply pipeline, a carrier gas supply pipeline, a first mass flow controller 14, a second clean gas supply pipeline, a second mass flow controller 18, a third clean gas supply pipeline, a third mass flow controller 27, a second process gas supply pipeline, a fourth mass flow controller 31, a first process gas input pipeline 44, a second process gas input pipeline 53, a primary mixing component 48, a distribution component 49, a first and third stage mixing component 50, a second and third stage mixing component 51, a first chamber 46, a second chamber 47, and an exhaust gas pipeline 52.

[0045] exist Figure 2In the specific embodiment shown, the liquid gas supply pipeline is used to introduce liquid gas TEOS. The liquid gas supply pipeline includes a manual valve 1, a diaphragm valve 2, a liquid mass flow meter 42, and a diaphragm valve 3, with its outlet connected to a vaporizer 43. The liquid gas TEOS is vaporized in the vaporizer 43 into a first process gas, namely TEOS vapor (tetraethyl orthosilicate, Si(OC2H5)4). The first clean gas supply pipeline is used to introduce clean gas nitrogen (N2), and includes a manual valve 9, a pressure regulating valve 8, and a diaphragm valve 7. The pressure regulating valve 8 controls the pressure of the nitrogen (N2), adjusting and stabilizing the higher inlet pressure upstream to the lower outlet pressure required downstream, while automatically maintaining this pressure within a set range according to flow rate changes. The first clean gas supply pipeline is connected in series to the liquid gas supply pipeline via a check valve 6 and a diaphragm valve 5 for purging and cleaning the liquid gas supply pipeline. The check valve 6 ensures that the liquid gas TEOS does not flow back into the first clean gas supply pipeline.

[0046] exist Figure 2 In the specific embodiment shown, the carrier gas supply pipeline is used to introduce carrier gas helium (He), and includes a manual valve 10, a pressure regulating valve 11, a filter 12, a diaphragm valve 13, a first mass flow controller 14, and a diaphragm valve 15. The pressure regulating valve 11 is used to regulate the pressure of the helium (He), and the first mass flow controller 14 is used to control the flow rate of the helium (He). The main function of the filter 12 is to remove solid particles and some liquid aerosols entrained in the gas, such as dust, rust, welding slag, oil mist, and water droplets, to protect the downstream mass flow controller and gas-using equipment, and to ensure gas purity. The outlet of the carrier gas supply pipeline is connected in series with the carrier gas input pipeline 45 via a pipe joint 16. The carrier gas input pipeline 45 is equipped with a heating component wrapped around the outside of the pipeline. The heating component ensures that the helium (He) temperature meets the process requirements through continuous and stable heating and temperature control. The outlet of the carrier gas input pipeline 45 is connected to the vaporizer 43 via a high-temperature resistant diaphragm valve 4. The carrier gas input line 45 is used to introduce helium (He) gas at the required temperature into the vaporizer 43, thereby enabling the helium (He) gas to assist in the vaporization of the liquid TEOS source into the first process gas, ensuring the continuity and stability of the first process gas supply. The second clean gas supply line is used to introduce clean argon (Ar) gas, and includes a manual valve 22, a pressure regulating valve 21, a filter 20, a diaphragm valve 19, a second mass flow controller 18, and a diaphragm valve 17. The pressure regulating valve 21 is used to regulate the pressure of the argon (Ar), and the second mass flow controller 18 is used to control the flow rate of the argon (Ar). The second clean gas supply line is connected in series unidirectionally to the carrier gas supply line for purging and cleaning the carrier gas supply line.

[0047] exist Figure 2In the specific embodiment shown, the second process gas supply pipeline is used to introduce the second process gas, oxygen (O2). It includes a manual valve 35, a pressure regulating valve 34, a filter 33, a diaphragm valve 32, a fourth mass flow controller 31, and a diaphragm valve 30. The pressure regulating valve 34 is used to regulate the pressure of the oxygen (O2), the fourth mass flow controller 31 is used to control the flow rate of the oxygen (O2), and the filter 33 is used to filter and remove impurities from the oxygen (O2) to protect the fourth mass flow controller 31 and ensure the purity of the oxygen (O2). The outlet of the second process gas supply pipeline is connected in series to the second process gas input pipeline 53 via a pipe joint 29. The third clean gas supply pipeline is used to introduce the clean gas, argon (Ar). It includes a manual valve 23, a pressure regulating valve 24, a filter 25, a diaphragm valve 26, a third mass flow controller 27, and a diaphragm valve 28. The pressure regulating valve 24 is used to regulate the pressure of the argon (Ar), and the third mass flow controller 27 is used to control the flow rate of the argon (Ar). The third cleaning gas supply line is connected in series in one direction to the second process gas supply line and is used to purge and clean the second process gas supply line.

[0048] exist Figure 2 In the specific embodiment shown, the carrier gas helium and the first process gas TEOS vapor are mixed in the vaporizer 43, and the vaporizer 43 outputs the first mixed gas. The inlet end of the first process gas input pipe 44 is connected to the outlet of the vaporizer and is used to introduce the first mixed gas into the first chamber 46 and the second chamber 47 of the PETEOS device. The second process gas input pipe 53 is used to introduce the second process gas oxygen into the first chamber 46 and the second chamber 47 of the PETEOS device. Both the first process gas input pipe 44 and the second process gas input pipe 53 are equipped with heating components wrapped around the outside of the pipes. The heating components are adjusted in real time through system feedback to maintain a constant temperature inside the pipes, ensuring that the TEOS vapor is always in a stable state and avoiding secondary condensation.

[0049] exist Figure 2In the specific embodiment shown, the first process gas input line 44 is connected to the first-stage mixing assembly 48 via filter 37 and high-temperature diaphragm valve 40, and the second process gas input line 53 is connected to the first-stage mixing assembly 48 via filter 38 and high-temperature diaphragm valve 41. Filters 37 and 38 are low-pressure-loss filters, which can reduce the impact of filters on the mixed gas. The first mixed gas containing helium and TEOS vapor and the second process gas oxygen are initially mixed in the first-stage mixing assembly 48. The gas mixed in the first-stage mixing assembly 48 enters the equalization assembly 49. The equalization assembly 49 uses its internal structure to evenly distribute the incoming gas according to the number of three-stage mixing assemblies, i.e., the number of chambers, and delivers it to the first third-stage mixing assembly 50 and the second third-stage mixing assembly 51 respectively. The first third-stage mixing assembly 50 is located at the inlet of the first chamber 46, and the second third-stage mixing assembly 51 is located at the inlet of the second chamber 47. Their function is to mix the gas entering the chamber again to ensure that helium, TEOS vapor, and oxygen are fully and uniformly mixed. The piping between the primary mixing component 48 and the chamber air inlet is all equipped with heatable piping.

[0050] exist Figure 2 In the specific embodiment shown, the exhaust pipe 52 is connected to the outlets of the first chamber 46 and the second chamber 47 respectively, for discharging the waste gas after the reaction. When the reaction conditions are not met in the first chamber 46 and the second chamber 47, the high-temperature diaphragm valve 39 is in the open state, and the mixed gas flows sequentially through the high-temperature diaphragm valve 39 and the high-temperature diaphragm valve 36 to the exhaust end of the exhaust pipe 52 for discharge.

[0051] exist Figure 2 In the specific embodiment shown, the process gas supply system for PETEOS equipment of this application adopts an integrated design. The liquid gas supply pipeline and the first clean gas supply pipeline are integrated into the first gas path integration module 55, and the carrier gas supply pipeline, the second clean gas supply pipeline, the third clean gas supply pipeline, and the second process gas supply pipeline are integrated into the second gas path integration module 54. The integrated design significantly reduces the space occupancy of the gas path system, optimizes the internal layout of the equipment, makes the equipment structure more compact and reasonable, and simplifies the disassembly and assembly process of the gas path system. This facilitates routine maintenance, troubleshooting, and component replacement by staff, effectively improving equipment operation and maintenance efficiency and reducing operation and maintenance costs.

[0052] like Figure 2As shown in a specific example of this application, a uniform and defect-free silicon dioxide (SiO2) thin film is grown on a wafer using a PETEOS device. At the start of the process, liquid TEOS gas enters the liquid mass flow meter 42 via manual valve 1 and diaphragm valve 2. The liquid mass flow meter 42 regulates the flow rate of TEOS before it enters the vaporizer 43. After vaporization, the first process gas generated is TEOS vapor. Simultaneously, helium is introduced into the carrier gas supply line. The helium enters the first mass flow controller 14 via manual valve 10, pressure regulating valve 11, filter 12, and diaphragm valve 13. The first mass flow controller 14 regulates the helium flow rate. The helium enters the carrier gas input line 45 via diaphragm valve 15, and then enters the vaporizer 43 to premix with the TEOS vapor to obtain a first mixed gas. The first mixed gas is input into the heatable first process gas input line 44, and flows through filter 37 to the front end of the high-temperature resistant diaphragm valve 40.

[0053] In this specific example, the second process gas, oxygen, enters the second process gas input pipeline 53 via hand valve 35, pressure regulating valve 34, filter 33, diaphragm valve 32, fourth mass flow controller 31, and diaphragm valve 30, and then flows through filter 38 to the front end of high-temperature diaphragm valve 41. Oxygen, TEOS vapor, and helium are premixed in the first-stage mixing component 48. Under normal circumstances, the high-temperature diaphragm valve 39 is in the open state, and the mixed gas flows through the high-temperature diaphragm valves 39 and 36 to the exhaust pipe 52 for discharge. At this time, the mixed gas serves a standby function. After the reaction conditions in the first chamber 46 and the second chamber 47 are met, the mixed gas passes upward through the equalization component 49 to evenly distribute it to the first chamber 46 and the second chamber 47. This equalization process can play a certain mixing role. Subsequently, the first and second third-stage mixing components 50 and 51, which are located at the chamber inlets, mix the process gas again. The fully mixed process gas enters the chamber for deposition reaction.

[0054] like Figure 2As shown in another specific example of this application, after a period of use, the PETEOS equipment requires cavity opening maintenance. This necessitates purging and cleaning the pipelines. Nitrogen is used for cleaning the liquid gas supply pipeline on the left. Nitrogen is introduced into the first cleaning gas supply pipeline, passing through hand valve 9, pressure regulating valve 8, diaphragm valve 7, check valve 6, and diaphragm valve 5 into the liquid gas supply pipeline. Simultaneously, argon is introduced into the second and third cleaning gas supply pipelines on the right. Argon enters the carrier gas supply pipeline, carrier gas input pipeline 45, and first process gas input pipeline 44 via the second mass flow controller 18. Argon enters the second process gas supply pipeline and second process gas input pipeline 53 via the third mass flow controller 27. During the purging process, the nitrogen supply is controlled by adjusting the pipeline pressure, while the argon supply is precisely regulated by controlling the pipeline gas flow rate through the second and third mass flow controllers 18 and 27, both working together to achieve the purging purpose.

[0055] like Figure 2 As shown, this application discloses a process gas supply system for PETEOS equipment. This system achieves high integration and effectively solves the core technical defects of existing technologies, such as unstable vaporization of liquid gas sources, low system integration, poor maintenance convenience, and uneven gas distribution across multiple chambers. This process gas supply system enables precise vaporization and supply control of liquid gas sources, significantly saving equipment space and improving maintenance convenience. An integrated automatic purging function ensures safe and efficient maintenance, and a three-stage mixing and distribution method ensures process consistency across multiple chambers. Overall, it meets the requirements for efficient, safe, and stable operation of PETEOS equipment, adapts to the stringent requirements of semiconductor manufacturing processes, and has significant engineering application value for improving semiconductor product yield.

[0056] In another specific embodiment of this application, a PETEOS device is provided, which utilizes the process gas supply system for PETEOS devices described in any of the above embodiments to supply process gas. The implementation principle and technical effects are similar, and will not be repeated here.

[0057] In the several embodiments provided in this application, it should be understood that the disclosed apparatus and methods can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Some or all of the units can be selected to achieve the purpose of the solution in this embodiment according to actual needs.

[0058] The above description is merely an embodiment of this application and does not limit the patent scope of this application. Any equivalent structural transformations made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A process gas supply system for PETEOS equipment, characterized in that, include: Liquid gas supply pipeline, which is used to introduce liquid gas; A vaporizer is used to vaporize the liquid gas source to obtain a first process gas, wherein the liquid gas source supply pipeline is connected to the vaporizer via a liquid mass flow meter; A carrier gas supply line is used to introduce carrier gas. The carrier gas supply line is connected to the vaporizer via a first mass flow controller. After the carrier gas and the first process gas are mixed in the vaporizer, the vaporizer outputs the first mixed gas. A first process gas input line is used to introduce the first mixed gas into at least one chamber of the PETEOS device, and the two ends of the first process gas input line are respectively connected to the vaporizer and the at least one chamber.

2. The process gas supply system for PETEOS equipment according to claim 1, characterized in that, The liquid mass flow meter is used to control the liquid gas source that is introduced into the vaporizer with a preset mass flow rate value; The liquid mass flow meter and the carrier gas with a preset gas flow rate value introduced into the vaporizer work together to control the gas flow rate value of the first process gas in the first mixed gas.

3. The process gas supply system for PETEOS equipment according to claim 2, characterized in that, The first mass flow controller is used to control the carrier gas supplied to the vaporizer at the preset gas flow rate value.

4. The process gas supply system for PETEOS equipment according to claim 1, characterized in that, The first process gas input pipeline is equipped with a heating component.

5. The process gas supply system for PETEOS equipment according to claim 1, characterized in that, Also includes: The second process gas supply line is used to introduce the second process gas. A second process gas inlet line is used to introduce the second process gas into the at least one chamber; At least one mixing component for mixing the first mixed gas and the second process gas, wherein the first process gas inlet line and the second process gas inlet line are connected to the at least one chamber via the at least one mixing component.

6. The process gas supply system for PETEOS equipment according to claim 5, characterized in that, When the at least one chamber is a plurality of chambers, it includes: The at least one mixing component includes a primary mixing component, a secondary mixing component, and a plurality of tertiary mixing components, wherein the number of the plurality of tertiary mixing components is equal to the number of the plurality of chambers; The first process gas input pipeline and the second process gas input pipeline are connected to the plurality of chambers in sequence via the first-stage mixing component, the second-stage mixing component and the plurality of third-stage mixing components, wherein the second-stage mixing component is used to evenly distribute the first-stage mixed gas output by the first-stage mixing component according to the number of the plurality of third-stage mixing components.

7. The process gas supply system for PETEOS equipment according to claim 5, characterized in that, Also includes: The first clean gas supply line is connected in series to the liquid gas source supply line via a first one-way valve; The second clean gas supply line is connected in series to the second process gas supply line via a second check valve; The third clean gas supply line is connected in series to the carrier gas supply line via a third one-way valve.

8. The process gas supply system for PETEOS equipment according to claim 7, characterized in that, The second clean gas supply line is equipped with a second mass flow controller, and the third clean gas supply line is equipped with a third mass flow controller.

9. The process gas supply system for PETEOS equipment according to claim 7, characterized in that, The process gas supply system for the PETEOS equipment adopts an integrated design.

10. A PETEOS device, characterized in that, The device utilizes the process gas supply system for PETEOS equipment as described in any one of claims 1-9 to supply process gases.

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