A method for solvent-mediated assisted hot-press growth of high-quality thickness-controllable perovskite quasi-single crystal thin films
By using a solvent-mediated assisted hot pressing growth method, the problems of numerous defects in polycrystalline films and complex preparation of single-crystal films in perovskite thin film fabrication have been solved. This method enables the growth of quasi-single-crystal thin films with low defect density and high carrier transport, thus promoting the industrialization of perovskite optoelectronic devices.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANDONG UNIV
- Filing Date
- 2026-04-27
- Publication Date
- 2026-07-17
AI Technical Summary
Among the existing perovskite thin film preparation technologies, polycrystalline thin films have many defects and low efficiency, while single-crystal thin films are complex to prepare and difficult to integrate on a large scale, making it difficult to balance high performance and process feasibility.
A solvent-mediated assisted hot-pressing growth method is adopted to induce secondary rearrangement and growth of powder film grains by utilizing the synergistic effect of solvent, temperature and pressure in a confined space, thereby forming a quasi-single-crystal thin film with low defect density.
It has achieved the growth of high-quality, thickness-controllable quasi-single-crystal thin films, which have excellent carrier transport performance and large-area fabrication capabilities, thus improving the performance and stability of optoelectronic devices.
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