A growth device for improving the quality and single crystal rate of cadmium zinc telluride crystals
By designing an inverted conical spiral flow channel and cooling medium, the problem of heat accumulation during the growth of zinc cadmium telluride crystals was solved, achieving high-quality and high single-crystal ratio crystal growth and improving the overall quality and single-crystal ratio of the crystals.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KUNMING INST OF PHYSICS
- Filing Date
- 2026-05-21
- Publication Date
- 2026-07-17
AI Technical Summary
During the growth of zinc cadmium telluride crystals, heat accumulation leads to the formation of concave crystal interfaces at the crystal growth interface, which is unfavorable for high-quality growth, affecting the single crystal rate and quality. The thermal conductivity of existing devices is fixed and cannot be adjusted in real time.
The design employs an inverted conical spiral flow channel and cooling medium. The cooling medium flows at varying speeds within the flow channel. Through the flow tube made of high-temperature resistant ceramic material and filled with a heat-conducting medium, a gradient cooling effect is formed, improving the heat transfer speed and heat removal efficiency.
It stabilized the solid-liquid interface morphology of crystal growth, improved the quality and single crystal rate of the grown crystal, and reduced crystal defects.
Smart Images
Figure CN122406359A_ABST