A method and apparatus for controlling a crystal isodiametric growth stage, and an electronic device
By collecting growth status data in real time and adjusting the pulling speed and temperature using fuzzy rules, the problems of concentric circle defects and production efficiency in the constant diameter growth stage of monocrystalline silicon were solved, and the radial uniformity and yield of the crystal were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SICHUAN GOKIN SOLAR TECHNOLOGY CO LTD
- Filing Date
- 2026-06-04
- Publication Date
- 2026-07-17
AI Technical Summary
Existing technologies struggle to balance concentric crystal defects and production efficiency during the constant diameter growth stage of monocrystalline silicon. Traditional fixed pulling speed thresholds cannot adapt to dynamic changes in the thermal field, resulting in poor solid-liquid interface stability and difficulty in balancing yield and production capacity.
By collecting growth status data in real time, characteristic stages are determined, and based on fuzzy rules and a method for coordinated control of pulling speed and temperature, pulling speed and temperature parameters are dynamically adjusted to accurately adapt to changes in the thermal field and suppress fluctuations at the solid-liquid interface.
It effectively improves the radial uniformity of crystals and growth yield, reduces concentric circle defects, and improves production efficiency and crystal quality.
Smart Images
Figure CN122406375A_ABST