A method and apparatus for three-dimensional scanning secondary ion mass spectrometry of a semiconductor sample
By establishing the correlation between primary ion beam intensity and ablation rate, and combining multiple surface scans and beam spot area division, the problems of insufficient sensitivity and inaccurate three-dimensional analysis in existing secondary ion mass spectrometry techniques in semiconductor analysis are solved, achieving efficient and accurate three-dimensional elemental distribution characterization.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INST OF GEOLOGY CHINESE ACAD OF GEOLOGICAL SCI
- Filing Date
- 2026-06-16
- Publication Date
- 2026-07-17
AI Technical Summary
Existing secondary ion mass spectrometry technology has insufficient sensitivity in semiconductor analysis, and single-point analysis has inherent limitations, making it difficult to effectively screen low-concentration impurities. Furthermore, the three-dimensional analysis function suffers from non-uniform erosion and quantitative bias caused by repeated sputtering.
By establishing the correlation between the intensity of a single ion beam and the ablation rate, the scanning depth is determined. By employing multiple surface scans and beam spot area division into volumes, a regular three-dimensional scanning analysis device is established to achieve high-throughput and high-precision element distribution characterization.
It improves data utilization efficiency, suppresses the adverse effects of fractionation and edge effects, ensures the accuracy and depth resolution of 3D reconstruction, and improves the accuracy of semiconductor sample analysis.
Smart Images
Figure CN122409731A_ABST