Metallic microparticle synergistic inhibition structure for DC GIL

By combining particle trapping and dielectric film technology in the GIL, the movement of metal particles is captured and suppressed, thus solving the risk of metal particles moving to the vicinity of the insulator in the GIL and improving operational stability and safety.

CN122417508APending Publication Date: 2026-07-17TSINGHUA UNIVERSITY
View PDF 0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-04-30
Publication Date
2026-07-17

AI Technical Summary

Technical Problem

In gas-insulated metal-enclosed transmission lines (GILs), free metal particles may move around the insulators under the influence of electric field force and gravity, increasing the risk of short circuits and long-term operational instability.

Method used

A metal particle synergistic suppression structure is adopted, which combines particle trap and dielectric film technology. After the particle trap captures the metal particles, the electric field distribution is changed by the dielectric film to suppress their movement. The dielectric film is located below the particle trap to increase the jumping voltage.

Benefits of technology

It effectively suppresses the movement of metal particles to the vicinity of the insulator, improves the long-term operational stability of GIL, and avoids the risk of short circuit.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN122417508A_ABST
    Figure CN122417508A_ABST
Patent Text Reader

Abstract

本申请提供了一种用于直流GIL的金属微粒协同抑制结构,涉及电气工程领域,旨在提高长期运行稳定性,避免金属微粒运动至绝缘子附近。金属微粒协同抑制结构包括外腔体,外腔体为管状的壳体结构,沿外腔体的长度方向,外腔体包括相对的两个端部。中心导体设置于外腔体的内部,且中心导体的外表面与外腔体的内表面之间形成空腔,空腔用于存储绝缘气体。微粒陷阱设置于所述中心导体与所述外腔体之间。介质膜设于所述外腔体与所述微粒陷阱之间,且位于所述外腔体的内表面。本申请能够使金属微粒被微粒陷阱所捕获,当金属微粒被微粒陷阱捕获后,金属微粒又与介质膜碰撞,金属的空间电荷发生变化,从而抑制金属微粒向绝缘子运动。
Need to check novelty before this filing date? Find Prior Art