Multiple mode dose compensation system

Abstract

A method, system, and computer program product for controlling exposure of a substrate positioned on a platen to an ion beam in an ion implantation system. A first current value is received that is determined based on a supply potential supplied to an ion source. A second current value is received that is determined based on an acceleration potential or a deceleration potential supplied to an ion implantation apparatus and has an effect on the ion source producing an ion beam for application to a substrate positioned on a platen. One or more energy filter supply current values are determined based on one or more energy filter supply potentials supplied to an energy filter positioned in a path of the ion beam. A platen position value is generated based on the first current value and the second current value and the energy filter supply current values. A position of the platen is adjusted using the platen position value.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to U.S. nonprovisional patent application No. 18 / 397,885, filed December 27, 2023, entitled “MULTIMODE DOSECOMPENSATION SYSTEM”, the entire contents of which are incorporated herein by reference. Technical Field

[0003] This disclosure generally relates to substrate processing, and more particularly to controlling the exposure of a substrate positioned on a stage in an ion implantation system to an ion beam. Background Technology

[0004] Ion implantation is a process that introduces dopants or impurities into a substrate through bombardment. In semiconductor manufacturing, dopants are introduced to alter electrical, optical, or mechanical properties. For example, dopants can be introduced into an inherent semiconductor substrate to change the type and level of conductivity of the substrate. In the fabrication of integrated circuits (ICs), precise doping profiles provide improved IC performance. To achieve a specific doping profile, one or more dopants can be implanted in various doses and energy levels of ions. Ion implantation systems for this purpose typically include an ion source and a series of beamline assemblies. The ion source includes a chamber for generating ions, a power supply, and an extraction electrode assembly positioned near the ion source in the chamber. The beamline assembly may include, for example, a mass analyzer, a first accelerator or decelerator stage, a collimator, and a second accelerator or decelerator stage. Much like a series of optical lenses used to manipulate a beam of light, the beamline assembly can filter, focus, and manipulate ions or ion beams with specific species, shapes, energies, and / or other qualities. The ion beam passes through the beamline assembly and can be guided toward a substrate mounted on a stage or fixture. The substrate can move in one or more dimensions (e.g., translation, rotation, and tilting). However, current designs of existing ion implantation systems suffer from uneven application of the ion beam to the substrate due to photoresist degassing conditions generated in the substrate processing chamber, resulting in lower semiconductor product quality, longer processing times, and significantly higher manufacturing costs. Summary of the Invention

[0005] In some embodiments, the present subject relates to an ion implantation device. The device may include: an ion source configured to generate an ion beam directed and positioned on a substrate on a stage; a first power source configured to generate a supply potential for supplying power to the ion source; and one or more second power sources configured to generate accelerating or decelerating potentials. The accelerating or decelerating potentials may be configured to influence the generation of the ion beam by the ion source, the ion beam being applied to the substrate. The device may also include an energy filter positioned in the path of the ion beam between the ion source and the substrate. The ion implantation device may also include a dose compensation controller configured to perform one or more of the following operations: The dose compensation controller may determine a first current value based on the supply potential supplying power to the ion source. The dose compensation controller may also determine a second current value based on the accelerating or decelerating potential. The dose compensation controller may further determine one or more energy filter supply current values ​​based on the supply potential of one or more energy filters supplied to the energy filters. The dose compensation controller may generate one or more stage position values ​​based on the first current value, the second current value, and the one or more energy filter supply current values. The dose compensation controller allows the position of the platform in the ion beam path to be adjusted using the generated platform position value.

[0006] In some implementations, the target object includes one or more of the following optional features: An accelerating potential can be configured to increase the energy of the ion beam. A decelerating potential can be configured to decrease the energy of the ion beam.

[0007] In some implementations, the application of a deceleration potential can be disabled while the application of an acceleration potential is enabled.

[0008] In some embodiments, the energy filter may include one or more electrodes configured to influence one or more parameters of the ion beam passing through the energy filter. These parameters may include at least one of the following: the direction of the ion beam, the energy of the ion beam, the focus of the ion beam, the trajectory of the ion beam, and any combination thereof.

[0009] In some embodiments, one or more stage position values ​​may be determined based on the difference between the sum of a first current value and a second current value and the supply current values ​​of one or more energy filters. Adjusting the position of the stage based on one or more stage position values ​​allows the ion beam to be applied to predetermined positions on the substrate. The dose compensation controller may include a filter current measurement component that can adjust one or more electrode parameters associated with one or more electrodes in the energy filter. The one or more electrode parameters may include at least one of the following: one or more current values ​​determined based on one or more potentials supplied to one or more electrodes, one or more position values ​​associated with one or more positions of one or more electrodes in the energy filter, and any combination thereof.

[0010] In some embodiments, the present subject relates to an ion implantation system that may include: an ion source configured to generate an ion beam directed and positioned on a substrate on a stage; and a first power source configured to generate a supply potential for supplying power to the ion source, wherein a first current value is determined based on the supply potential. The system may also include one or more second power sources configured to generate accelerating or decelerating potentials. The accelerating or decelerating potentials may be configured to influence the generation of the ion beam by the ion source, the ion beam being applied to the substrate, wherein a second current value may be determined based on the accelerating or decelerating potential. The system may also include an energy filter positioned in the path of the ion beam between the ion source and the substrate. The system may further include at least one processor and at least one non-transitory storage medium, the at least one non-transitory storage medium storing instructions that, when executed by the at least one processor, cause the processor to: determine one or more energy filter supply current values ​​based on the supply potentials of one or more energy filters supplied to the energy filters; generate one or more platen position values ​​based on a first current value, a second current value, and the one or more energy filter supply current values; and cause the platen's position in the path of the ion beam to be adjusted using the one or more platen position values. In some embodiments, the ion implantation system may include one or more of the optional features referenced above.

[0011] The document also describes a non-transitory computer program product (i.e., a physically implemented computer program product) that stores instructions that, when executed by one or more data processors of one or more computing systems, cause at least one data processor to perform the operations described herein. Similarly, a computer system is also described, which may include one or more data processors and memory coupled to the one or more data processors. The memory may temporarily or permanently store instructions that cause at least one processor to perform one or more of the operations described herein. Furthermore, the method may be implemented by one or more data processors located within a single computing system or distributed among two or more computing systems. Such computing systems may be connected via one or more connections (including but not limited to connections via networks (e.g., the Internet, wireless wide area networks, local area networks, wide area networks, wired networks, or similar networks), direct connections between one or more of the computing systems, etc.) and may exchange data and / or commands or other instructions.

[0012] Details of one or more variations of the subject matter described herein are set forth in the accompanying drawings and the following description. Further features and advantages of the subject matter described herein will become apparent from the description and drawings, and from the scope of the claims. Attached Figure Description

[0013] The accompanying drawings, incorporated in and forming part of this specification, illustrate certain forms of the subject matter disclosed herein and, together with the description, help to explain some of the principles associated with the disclosed embodiments. The drawings are schematic in nature and do not represent actual dimensions or aspect ratios. In the drawings,

[0014] Figure 1 An example ion implantation system is shown, based on some implementations of the present target.

[0015] Figure 2 Examples of energy mode control components according to some implementation schemes of the current target are shown.

[0016] Figure 3 Examples of energy filter current measurement components according to some embodiments of the present target are shown.

[0017] Figure 4 Examples of wire current measurement assemblies according to some embodiments of the present subject are shown.

[0018] Figure 5 Examples of wire current measurement processing components according to some embodiments of the present target are shown.

[0019] Figure 6 Examples of processes are shown based on some implementation schemes of the current subject matter.

[0020] Figure 7 Examples of dose compensation processes based on some implementation schemes of the current target are shown. Detailed Implementation

[0021] To address these and other potential shortcomings of currently available solutions, one or more embodiments of the present subject matter relate to methods, systems, articles of manufacture, etc., which, among other possible advantages, provide the ability to perform substrate processing, and specifically to control the exposure of a substrate positioned on a stage in an ion implantation system to an ion beam by changing the position of the stage.

[0022] In some embodiments, the subject matter relates to an ion implantation system. The system may include an ion source configured to generate an ion beam directed onto a substrate positioned on a stage. The ion source may be powered by an extraction power source. One or more additional voltage sources may be configured to generate accelerating potentials / voltages and / or decelerating potentials / voltages. For example, an accelerating power source or voltage source may generate an accelerating potential and a decelerating power source or voltage source may generate a decelerating potential. Alternatively or additionally, the same voltage source may generate both types of potentials. Furthermore, the same voltage source may also generate potentials for powering both the ion source and the accelerating / decelerating sources. The settings of the accelerating and / or decelerating power sources may differ from the settings of the voltage sources powering the ion source. The accelerating / decelerating potentials may be configured to influence the generation of the ion beam by the ion source, which is applied to the substrate. Furthermore, the accelerating potential may be configured to increase the energy of the ion beam directed onto the substrate. Conversely, the decelerating potential may be configured to decrease the energy of the ion beam directed onto the substrate. Additionally, in some exemplary embodiments, enabling the application of an accelerating potential may disable the application of a decelerating potential, and vice versa. Furthermore, in some exemplary embodiments, the application of a deceleration potential can also couple the power source used to generate the ion beam to ground and / or disable the power source.

[0023] The ion implantation system may also include an energy filter that can be positioned in the path of the ion beam between the ion source and the substrate. The energy filter may include one or more electrodes configured to influence one or more parameters of the ion beam that may pass through the energy filter. These parameters may include at least one of the following: the direction of the ion beam, the energy of the ion beam, the focus of the ion beam, the trajectory of the ion beam, and / or any other parameter, and / or any combination thereof.

[0024] Furthermore, the ion implantation system may include one or more processors configured to control the movement (e.g., velocity), positioning, and / or orientation) of a stage (and thus a substrate positioned on the stage) in the path of the ion beam. Specifically, the processor may determine the current value of an energy filter supply current that can be supplied to an energy filter (e.g., using one or more electrodes disposed in the energy filter). Using the energy filter supply current value and the current values ​​of the supply current and the acceleration / deceleration current, the processor may be configured to determine one or more stage velocity, position, and / or orientation values ​​(hereinafter referred to as stage position values). Using the stage position values, the processor may generate one or more instructions that cause adjustment of the stage's position in the path of the ion beam. It should be noted that the stage may be coupled to one or more motorized mechanisms configured to receive instructions from the processor and use these instructions to adjust the path and / or position and / or orientation of the ion beam relative to the guided stage (and thus the guided substrate). Adjustments to the position / orientation of the platform may involve translation (in any direction), rotation (in any direction), and / or any other movement of the platform (and therefore the substrate that may be placed on the platform).

[0025] Adjusting the position of the stage based on the stage position value allows an ion beam to be applied to a predetermined location on the substrate. For example, before the stage position is adjusted, an ion beam may have been applied to a first segment of the substrate, and after the adjustment, the ion beam may be applied to another segment of the substrate. In some embodiments, the position adjustment and therefore the application of the ion beam may be continuous (e.g., there is no beam interruption during the position change) and / or interval-based (e.g., exposing a segment of the substrate to the ion beam at a time during an interval).

[0026] In some exemplary embodiments, the processor may generate one or more instructions based on a determined current value to trigger adjustments to one or more electrode parameters associated with one or more electrodes of the energy filter. Adjustments to the electrode parameters may cause changes in how the ion beam is applied to the substrate. Electrode parameters may include at least one of the following: one or more current values ​​supplied to the electrodes, one or more position values ​​associated with one or more locations of the electrodes in the energy filter, and any combination thereof. Adjustments to the electrodes may be performed separately from (or not at all) and / or simultaneously with adjustments to the position of the substrate.

[0027] It should be noted that the term "located in" is used in this article. "on" and "over" "overlying" and "set at" "disposed on" and / or "located on" "Over" can be used to indicate that two or more elements may be in direct physical contact with each other and / or not in direct contact with each other. For example, "located at" "Above" can mean that one element can be positioned above another element but not in contact with it, and may have another element and / or multiple elements positioned between the two elements. Thus, the term "located" "Above", "Covering" "Up", "Set at" "above" and / or "located in" "Above" can be used interchangeably here.

[0028] Figure 1 An exemplary ion implantation system 100 according to some embodiments of the present subject is shown. System 100 may include: a bead assembly 102; an energy filter 104; a processing chamber or terminal station 106; an energy mode controller 108; a dose compensation controller 110, which may include an implantation dose controller 112 and a filter current measurement assembly 130; an acceleration power supply 124 coupled to the bead assembly 102 (and coupled to ground) using a switch 120; a deceleration power supply 126 coupled to the bead assembly 102 (and coupled to ground) using a switch 122; and one or more filter power supplies 128 (a, b) (which may also be coupled to ground).

[0029] The wire assembly 102 may include a feed source 114, an ion source 116, and an ion source power supply 118. The ion source 116 of the wire assembly 102 may be configured to generate an ion beam 138 that can pass through an energy filter 104. The energy filter 104 may be configured to change the direction of the generated ion beam 138 to generate an ion beam 140, which may be applied to a substrate 136 positioned on a stage 134 in a terminal station 106. The wire assembly 102 may also include an ion implanter and one or more wire assemblies 117.

[0030] Ion source 116 may include a chamber for receiving a gas stream 115 from feed source 114 and generating ions. Ion source 116 may also include an ion source power supply 118 and one or more extraction electrodes disposed near the chamber. Beam assembly 117 may include, for example, a mass analyzer, a first acceleration and / or deceleration stage, a collimator, and / or any other beam assembly. For example, an energy filter (also referred to as an energy purity module (EPM) or energy filter) 104 may be incorporated into beam assembly 117 and / or may be a separate component, such as... Figure 1 As shown in the image.

[0031] The beam assembly 117 can filter, focus, and / or manipulate ions and / or the ion beam 138 to impart specific species, shape, energy, and / or other qualities. The ion beam 138 can pass through the beam assembly 117 and can be guided toward a substrate 136, which is mounted on a stage 134 and / or fixture within the terminal station 106. The substrate 136 can be moved (e.g., translated, rotated, and tilted) in one or more dimensions using one or more stage adjustment mechanisms 132 coupled to the stage 134.

[0032] like Figure 1 As shown, system 100 may include one or more feed sources 114 that can operate together with the chamber of ion source 116. In some embodiments, the material supplied from feed source 116 may include source material and / or any other additional material. The source material may include one or more dopant species that can be introduced into substrate 136 in ionic form. The additional material may include a diluent that may be introduced together with the source material into the ion source chamber of ion source 116 to dilute the concentration of the source material in the chamber of ion source 116. The additional material may also include a cleaning agent (e.g., etching gas, etc.) that is introduced into the chamber of ion source 116 and delivered within system 100 to clean one or more of the wire assemblies 117.

[0033] In some implementations, different species may be used as source and / or additive materials. Non-limiting examples of source and / or additive materials may include at least one of the following: atomic and / or molecular species, including boron (B), carbon (C), oxygen (O), germanium (Ge), phosphorus (P), arsenic (As), silicon (Si), helium (He), neon (Ne), argon (Ar), krypton (Kr), nitrogen (N), hydrogen (H), fluorine (F), chlorine (Cl), and / or any other element. It is understood that the species listed above are non-limiting, and other atomic and / or molecular species may be used. Depending on the application, the species may be used as a dopant and / or additive material. For example, a species may be used as a dopant in one application and as an additive material in another, and / or vice versa.

[0034] In some embodiments, the source and / or additional material may be provided to the ion source chamber of ion source 116 in the form of gas and / or vapor. If the source and / or additional material is in a non-gaseous and / or non-vaporous form, a vaporizer may be provided near the feed source 114. Figure 1 (Not shown in the diagram) to convert materials into gaseous and / or vapor forms. A flow rate controller may be provided to control the amount and rate at which source and / or additional materials are supplied to system 100. The flow rate controller may be integrated into the ion source power supply 118 and / or may be a separate processing component.

[0035] The energy filter 104 may include one or more electrodes 127 (a, b, c, d) positioned near the path of the ion beam 138 to influence and / or control the deflection, deceleration, and / or focusing of the ion beam 138. In some exemplary, non-limiting embodiments, the energy filter 104 may be a vertical electrostatic energy filter (VEEF) and / or any other electrostatic filter (EF). Alternatively or additionally, the energy filter 104 may be an electrostatic lens of a dual magnetic tape high-current ion implanter.

[0036] Electrode 127 may be coupled to one or more filter power supplies 128. For example, such as Figure 1 As shown, electrode 127a can be coupled to filter power supply 128a; electrode 127b can be coupled to filter power supply 128b; and so on. (For ease of illustration, Figure 1 (Only two filter power supplies are shown in the diagram). In some embodiments, each electrode 127 may have its own power filter power supply 128. Alternatively or additionally, one or more electrodes 127 may share one or more filter power supplies 128.

[0037] In some embodiments, electrode 127 may include a set of upper electrodes (e.g., electrodes 127b and 127c) disposed above ion beam 138 and a set of lower electrodes (e.g., electrodes 127a and 127d) disposed below ion beam 138. The set of upper electrodes and the set of lower electrodes may be fixed and / or have fixed positions. Alternatively or additionally, the positions of one or more of electrodes 127 may be adjustable (e.g., by translation, rotation, tilting, etc.). The potential difference between the set of upper electrodes and the set of lower electrodes may also vary along the ion beam trajectory to reflect the energy of the ion beam at different points along the ion beam trajectory, thereby enabling independent control of the deflection, deceleration, focusing, and / or any other parameters of the ion beam 138.

[0038] During operation, some of the ions traversing the energy filter 104 may exchange charge with background neutrals. These neutrals may be neutrals of residual gases in the tool (e.g., nitrogen and water) and / or neutral products released from the substrate during ion implantation. The composition of these products may vary, thus enabling complex chemical interactions. During the charge exchange process, previously neutral atoms may become charged and / or accelerate toward the negatively biased electrode 127 in the energy filter 104.

[0039] like Figure 1As shown, the energy mode controller 108 can be communicatively coupled to the dose compensation controller 110 via connection 135 and can be configured to exchange one or more commands with the controller 110. The energy mode controller 108 can also be configured to control the operating mode of the system 100 via switches 120 and 122 (e.g., the opening and / or closing of switches 120 and 122) and via connections 121 and 123, wherein switch 120 can communicatively couple the acceleration power supply 124 to the cabling assembly 102, and switch 122 can communicatively couple the deceleration power supply 126 to the cabling assembly 102. In addition to being coupled to the cabling assembly 102, power supplies 124 and 126 can be communicatively coupled to the dose compensation controller 110 via connections 125 and 129, respectively, and can be configured to exchange one or more commands with the controller 110 using such connections. Similarly, the ion source power supply 118 of the beam assembly 102 can be communicatively coupled to the dose compensation controller 110 via connection 131, and can be configured to use this connection to exchange one or more commands with the dose compensation controller 110. In some embodiments, the energy mode controller 108 can also be configured to communicate via, for example, a separate switch ( Figure 1 The power supply 118 of the beam assembly 102 is controlled (not shown in the diagram) and / or in any other way. In some embodiments, the ion source power supply 118 may also be controlled by the energy mode controller 108 via connection 123a and switch 122a. For example, the energy mode controller 108 may be configured to open switch 122a by sending an appropriate command via connection 123a, allowing the ion source power supply 118 to supply power to the ion source 116 to generate the ion beam 138. Switch 122a may be closed by the energy mode controller 108 via connection 123a, thereby connecting the ion source power supply 118 to ground when, for example, it is no longer desired to apply power from the ion source power supply 118. The energy mode controller 108 may couple the ion source power supply 118 to the ion source 116, thereby enabling operation of the system 100 to begin.

[0040] The dose compensation controller 110 can be communicatively coupled to the filter power supply 128 (a, b) via connections 143 (a, b). In some embodiments, connections 143 (a, b) can couple the filter current measurement component 130 of the dose compensation controller 110 to the corresponding filter power supply 128 (a, b). The filter power supply 128 can be communicatively coupled (this may include electrical coupling and / or connection and / or any other type of coupling and / or connection) to the electrodes 127 of the energy filter 104 and can supply current and / or voltage signals (as discussed herein) to one or more electrodes 127, which may affect one or more properties of the ion beam 138 (e.g., the formation of the ion beam 140). The filter current measurement component 130 can exchange one or more commands with the filter power supply 128 using the corresponding connection 143.

[0041] The dose compensation controller 110 may also include an implantable dose controller 112, which may exchange one or more signals / connections with one or more stage adjustment mechanisms 132 located in the terminal station 106 via connection 141 to adjust the orientation of the stage 134 (and thus apply the ion beam 140 to the substrate 136).

[0042] As described above, the energy mode controller 108 can control the operating mode of the system 100, which may include an acceleration mode, a deceleration mode, or neither of the above modes (i.e., no acceleration or deceleration potential is supplied to the beam assembly 102). In acceleration mode, acceleration power supply 124 may provide acceleration potential to beam assembly 102, and in deceleration mode, deceleration power supply 126 may provide deceleration potential to beam assembly 102. Furthermore, in acceleration mode, ion source power supply 118 may also be configured to supply power to ion source 116 (i.e., by opening switch 122a), while in deceleration mode, ion source power supply 118 may be connected to ground (i.e., by closing switch 122a). Potentials can affect the generation and / or one or more properties of the ion beam 138. In some exemplary embodiments, acceleration and / or deceleration potentials may be supplied to ion source 116 via ion source power supply 118 (through, for example, a series connection of power supplies 118 and 124 for acceleration potentials with power supply 126 for deceleration potentials).

[0043] The energy mode controller 108 can use corresponding switches 120 and 122 to control the coupling of power supplies 124 and 126. Specifically, the accelerating power supply 124 can be communicatively coupled to the cabling assembly 102 via switch 120, and the decelerating power supply 126 can be communicatively coupled to the cabling assembly 102 via switch 122. To control switches 120 and 122, the energy mode controller 108 can send commands / signals (e.g., current, voltage, etc.) to open and / or close the switches via connections 121 and 123, respectively. For example, to supply an accelerating potential to the accelerating power supply 124, the energy mode controller 108 can send a command / signal via connection 121 to close switch 120, thereby coupling the accelerating power supply 124 to the cabling assembly 102, and can send another command / signal via line 123 to open switch 122, thereby decoupling the decelerating power supply 126 from the cabling assembly 102. Alternatively or additionally, one or both of switches 120 and 122 may be in an open state during normal operation, thereby decoupling the two switches from the harness assembly 102. It is understood that any arrangement of the acceleration / deceleration power supplies 124, 126 coupled to the harness assembly 102 is possible. In some embodiments, the energy mode controller 108 may also control the potential / voltage level supplied to the harness assembly 102 by one or both of the acceleration / deceleration power supplies 124, 126. The amount of the supplied potential (acceleration potential and / or deceleration potential) may be determined based on the specific application and / or desired outcome.

[0044] Once the acceleration or deceleration potential is triggered by the corresponding power supply 124, 126, the power supply can be configured to send a current value (e.g., I) to the dose compensation controller 110. ACC (Accelerating current value) or I DEC (Deceleration current value) is associated with data / information, the current value being determined based on the corresponding potential supplied to the beam assembly 102. In addition to the acceleration / deceleration current value, the ion source power supply 118 can also send data / information related to the current value (Iacceleration / deceleration current value) to the dose compensation controller 110. EXT The relevant data / information, including the current value (I) EXT The dose compensation controller 110 can use the above current value and the current value of the current (I0) to determine the dose compensation controller 110 based on the potential supplied to the ion source 116. FILT (current value (I) FILT The current (I) of one or more terminal stations 106 is determined based on the potential supplied by the filter power supply 128 to the electrode 127 to determine the acceleration or deceleration mode. ES The scanning speed of the stage 134 (which can be continuously updated V1) and / or the location of the stage 134 in the terminal station 106 at one or more positions in the path of the ion beam 140 (e.g., P). platenThe dose compensation controller 110 (and specifically the filter current measurement component 130 of the dose compensation controller 110) can receive signals from the filter power supply 128 via a corresponding connection 143. FILT Data / information related to current values.

[0045] For example, the terminal current applied to the substrate 136 in deceleration mode can be determined using the following procedure:

[0046]

[0047] The terminal current applied to substrate 136 in acceleration mode without any dose compensation can be determined using the following:

[0048]

[0049] However, the terminal station current in acceleration mode and when dose compensation is performed (determined by dose compensation controller 110) can be determined as follows:

[0050]

[0051] Additionally, the scanning speed of the stage 134 during dose compensation (e.g., the movement speed of the stage 134 driven by the stage adjustment mechanism 132 based on instructions from the implanted dose controller 112) can be determined using the following procedure:

[0052]

[0053] Where K is a dose compensation factor that can be determined by the dose compensation controller 110; I ES0 It is the initial terminal current applied to the substrate 136; and I ES1 It is one or more subsequent (e.g., sequentially determined) terminal station currents received during dose compensation, wherein the terminal station current (I ES0 and / or I ES1 It can be determined in any desired way.

[0054] Alternatively or additionally, the dose compensation controller 110 may determine the stage position value (P) based on the difference between the sum of the ion source supply current and the acceleration / deceleration current and the energy filter supply current. platen ):

[0055]

[0056] Where P platen This is the position value of the platform in terminal station 106; I ACC or DEC These are the current values ​​associated with the accelerating or decelerating current, respectively.

[0057] In some exemplary embodiments, the dose compensation controller 110 may also use the above current values ​​to determine the current supplied by the filter power supply 128 to one or more electrodes 127. For example, using current values ​​obtained from one or more power supplies 118, 124, 126, the dose compensation controller 110 may determine that the voltage on electrode 127a may need to be reduced and the voltage on electrode 127b may need to be increased. Once such a determination is made, the dose compensation controller 110 may send appropriate instructions to the filter power supply 128 via the filter current measurement component 130. It is understood that any other determination of current and / or voltage may be possible.

[0058] The dose compensation controller 110 can automatically receive data / information related to power signals (e.g., current, voltage) supplied by power sources 118, 124, and / or 126. Alternatively or additionally, the dose compensation controller 110 can request this data / information from one or more of power sources 118, 124, and / or 126 when it receives an instruction from the energy mode controller 108 via connection 135 that a specific mode (e.g., acceleration or deceleration) has been initiated. The dose compensation controller 110 can also obtain this data / information independently from power sources 118, 124, and / or 126 without receiving any instruction from the energy mode controller 108.

[0059] In some embodiments, the energy mode controller 108 may be configured to initiate a dose compensation process by sending one or more instructions to the dose compensation controller 110 via connection 135. These instructions may be sent simultaneously with and / or separately from instructions to switches 120 and / or 122. Furthermore, sending a single instruction (e.g., a instruction to close switch 120 via connection 121) may trigger a series of instruction transmissions to and / or by other components of system 100 (e.g., sending instructions to controller 110 via connection 135). It is understood that any method of sending instructions to one or more components of system 100 is possible.

[0060] A dose compensation process can be used to determine the specific velocity, position, and / or orientation of the stage 134 (and therefore substrate 136) in the path of the ion beam 140 in terminal station 106. This determination helps ensure that the ion beam 140 is applied uniformly to substrate 136 (according to pre-programmed specifications). Furthermore, the dose compensation process can also help reduce photoresist degassing effects (which can occur when electrons generated by charge exchange travel toward the beamline assembly and return to ground via power), which in turn cause inaccurate ion implantation beam current signals, resulting in uneven application of the ion beam to the substrate.

[0061] In some implementations, once the dose compensation process is triggered, the dose compensation controller 110 can be configured to initiate the following operation: collecting data / information related to a current value determined based on the potential supplied by power supply 124 or 126 (depending on whether the energy mode controller 108 triggers an acceleration mode or a deceleration mode) and power supply 118. As described herein, the current value can be automatically provided to the dose compensation controller 110 and / or requested by the dose compensation controller 110 from power supplies 118, 124, and / or 126.

[0062] Furthermore, upon receiving an instruction from the energy mode controller 108, the filter current measurement component 130 of the dose compensation controller 110 can initiate the following operation: collecting data / information related to a current value determined based on the potential supplied by one or more filter power supplies 128 to one or more electrodes 127. The filter current measurement component 130 can automatically receive the current value and / or receive the current value upon request from the dose compensation controller 110. In some embodiments, the filter current measurement component 130 may be configured to send data to the processing component of the dose compensation controller 110 (such as...). Figures 4 to 5 (As shown) provides individual current values ​​and / or the sum of all current values ​​received by the filter current measurement component 130 from the filter power supply 128 and / or the sum of current values ​​received by the filter current measurement component 130 from each electrode 127 of each particular power supply 128.

[0063] It is understood that the aforementioned current values ​​may be provided to the dose compensation controller 110 in a specific format (e.g., a uniform format) and / or any other desired format. The processing component of the dose compensation controller 110 may be configured to convert the data / information received by the filter current measurement component 130 from the power supplies 118, 124 and / or 126 into a format suitable for calculations of platform speed, position and / or orientation performed by the processing component of the dose compensation controller 110.

[0064] The dose compensation controller 110 can be configured to determine one or more velocities, positions, and / or orientations of the stage 134 using current values ​​received from other components of the system 100. These values ​​can be determined using procedures (4) to (5). In some embodiments, the velocity, position, and / or orientation of the stage 134 can be continuously updated immediately upon receiving updated current values ​​from one or more components of the system 100. This allows for immediate adjustment of the velocity, position, and / or orientation of the stage 134, which in turn ensures that the ion beam 140 is uniformly applied to the substrate 136.

[0065] The processing component of the dose compensation controller 110 can provide the implanted dose controller 112 with a determined velocity, position, and / or orientation of the platform 134. The implanted dose controller 112 can send commands via connection 141 to the platform adjustment mechanism 132 (e.g., one or more motors) to trigger adjustments to the velocity, position, and / or orientation of the platform 134 based on the platform velocity, position, and / or orientation values ​​determined by the dose compensation controller 110.

[0066] Figure 2 Examples of energy mode controller 108 according to some embodiments of the present subject are shown. As discussed herein, energy mode controller 108 can be configured to control operating modes of control system 100, which may include acceleration mode, deceleration mode, and / or no-acceleration or deceleration mode.

[0067] The energy mode controller 108 may include an acceleration power trigger 202, a deceleration power trigger 204, a filter current measurement component controller 206, a wire current measurement component controller 208, and a processing component 210. The acceleration power trigger 202 and the deceleration power trigger 204 can be communicatively coupled to the processing component 210. The acceleration power trigger 202 can also be communicatively coupled to the switch 120. Figure 2 (Not shown in the image). The deceleration power supply trigger 204 can be communicatively coupled to switch 122 (…). Figure 2 (Not shown in the image). The processing component 210 can be communicatively coupled to the controllers 206 and 208. In addition, the switch 122a can also be controlled by the energy mode controller 108 to enable the application of a potential from the ion source power supply 118 in acceleration mode (with switch 122a open) and to connect the ion source power supply 118 to ground in deceleration mode (with switch 122a closed).

[0068] Upon receiving one or more inputs associated with the operation of system 100 (e.g., system 100 operating in acceleration mode, deceleration mode, and / or non-acceleration or deceleration current mode), processing component 210 may send instructions to acceleration power trigger 202 and / or deceleration power trigger 204 to close and / or open (and / or retain the switches in an open / closed state) one or more switches 120, 122. For example, an input indicating that system 100 will operate in acceleration mode may cause processing component 210 to send an instruction to acceleration power trigger 202 to close switch 120 so that acceleration power supply 124 can be communicatively coupled to wire harness assembly 102 ( Figure 2(not shown in the image), and switch 124 is turned off (or kept off) so that the deceleration power supply 126 is not coupled to the wiring harness assembly 102. Alternatively, an input indicating that the system 100 will operate in deceleration mode may cause the processing component 210 to send a command to the deceleration power supply trigger 204 to close switch 122 so that the deceleration power supply 126 can be communicatively coupled to the wiring harness assembly 102 (not shown in the image), and the switch 124 is turned off (or kept off) so that the deceleration power supply 126 can be communicatively coupled to the wiring harness assembly 102. Figure 2 (not shown in the diagram), and switch 122 is turned off (or kept off) so that accelerating power supply 124 is not coupled to beam assembly 102. In some exemplary embodiments, an input indicating whether either accelerating or decelerating power supply is coupled to beam assembly 102 (and whether ion source power supply 118 is coupled to ground) can cause processing component 210 to send a command to turn off (or keep off) both switches 120 and 122, thereby preventing power supplies 124 and 126 from coupling to beam assembly 102.

[0069] In some implementations, inputs may be automatically provided and / or determined by system 100 based on one or more characteristics associated with a potentially desired finished product outcome (e.g., the final form of the substrate) (e.g., using processing component 210 and / or dose compensation controller 110). Inputs may also be provided manually to energy mode controller 108. It is understood that any desired manner indicative of the operating mode of system 100 may be provided.

[0070] Processing component 210 can also send instructions to filter current measurement component controller 206, which in turn can send instructions to filter current measurement component 130 of dose compensation controller 110 to enable measurement based on the filter current measurement component 128 (…). Figure 2 The filter current is determined by the potential supplied (not shown in the diagram). In some exemplary embodiments, instructions from processing component 210 (via filter current measurement component controller 206) may instruct the filter current to be measured from one of the power supplies 128 (e.g., power supply 128a) and not from the other of the power supplies 128 (e.g., power supply 128b). Furthermore, the instructions may also indicate how the measurement value will be obtained, for example, periodically (e.g., at specific times during operation of system 100), continuously, at specific intervals, and / or using any other scheduling. It is understood that any other type of instruction associated with filter current measurement may be sent from filter current measurement component controller 206 to filter current measurement component 130 (…). Figure 2 (Not shown in the image).

[0071] Processing component 210 can also send commands to beam current measurement component controller 208, which in turn can send commands to dose compensation controller 110. Figure 2(Not shown in the image) sends a command to enable the dose compensation controller 110 to initiate a dose compensation process. During this process, the dose compensation controller 110 may collect data / information related to current measurements (e.g., from power supplies 118, 124 / 126, filter power supply 128 (via filter current measurement assembly 130)) and determine the location of the platform 134 in the terminal station 106, which may include information related to the platform 134 ( Figure 2 (Not shown) One or more parameters related to translation, rotation, tilt, etc. In some embodiments, the beam current measurement component controller 208 may receive one or more communications from the dose compensation controller 110. The controller 110 may send communications to the beam current measurement component controller 208 in response to receiving one or more current values ​​from one or more power supplies 118, 124 / 126, filter power supply 128, etc., and may query the beam current measurement component controller 208 whether the dose compensation controller 110 should initiate a dose compensation process. Alternatively or additionally, the dose compensation controller 110 may send communications to the beam current measurement component controller 208 instructing the beam current measurement component controller 208 to initiate a dose compensation process upon receiving one or more current values ​​and / or in response to one or more inputs provided to the system 100. In the latter case, in response to the input, the dose compensation controller 110 may instruct the energy mode controller 108 to activate one or more operating modes (e.g., acceleration, deceleration, and / or none) via the beam current measurement component controller 208.

[0072] Figure 3 An example of an energy filter current measurement assembly 130 according to some embodiments of the present subject is shown. As discussed herein, the energy filter current measurement assembly 130 can be configured to obtain a filter power supply current value, which can be provided by a filter power supply 128 to one or more electrodes 127 disposed in the energy filter 104. Figure 3 (Not shown in the image).

[0073] The filter current measurement assembly 130 may include a filter current measurement assembly 302, an energy filter current processing assembly 304, and an energy filter supply current assembly 306. The filter current measurement assembly 302 may be communicatively coupled to the energy mode controller 108, and specifically, the filter current measurement assembly controller 206 is coupled to the energy mode controller 108. Figure 3(Not shown in the image). The filter current measurement component 302 can also be communicatively coupled to the energy filter supply current component 306, which in turn can be communicatively coupled to the filter power supply 128. The energy filter supply current component 306 can be communicatively coupled to the energy filter current processing component 304, which in turn can be communicatively coupled to the processing component of the dose compensation controller 110. Figure 3 (Not shown in the image).

[0074] The filter current measurement component 302 can be configured to receive instructions from the filter current measurement component controller 206, enabling the filter current measurement component 130 to begin acquiring data / information related to the current determined based on the potential supplied by one or more filter power supplies 128 to one or more electrodes 127. The instructions may indicate how the data / information should be acquired, for example, periodically, continuously, at specific intervals, etc. As discussed herein, the instructions may also indicate whether the power supply current should be obtained from certain power supplies 128 rather than from other power supplies.

[0075] Upon receiving an instruction from the filter current measurement component controller 206 of the energy mode controller 108, the filter current measurement component 302 may trigger the energy filter supply current component 306 to begin acquiring and / or receiving data / information related to the current determined based on the potential supplied by the filter power supply 128. The data / information collected by the energy filter supply current component 306 may be sent to the energy filter current processing component 304. The energy filter current processing component 304 may process the current value data / information and provide the current value data / information to the dose compensation controller 110. Figure 3 (Not shown in the image) for further processing.

[0076] Figure 4 Examples of dose compensation controller 110 according to some embodiments of the present subject are shown. The dose compensation controller 110 can be configured to obtain current values ​​from power supplies 118, 124 and / or 126 and filter power supply 128 and use, for example, procedure (1) to determine the current at terminal station 106 of platform 134. Figure 4 The specific location (not shown in the image) is shown in the image.

[0077] The dose compensation controller 110 may include a dose compensation controller processing component 410, which may be configured to receive one or more power supply current values ​​402, one or more acceleration current values ​​404, one or more deceleration current values ​​406, and / or one or more energy filter current values ​​408. Using one or more of these current values, the dose compensation controller processing component 410 may generate one or more terminal station current values ​​412 and / or one or more scan position control commands 414 (e.g., velocity, position, and / or orientation values) as part of the dose compensation process. As discussed herein, the current values ​​may be determined based on potential values ​​applied by the respective power supply. The current values ​​412 and / or scan position control commands 414 may be provided to the implanted dose controller 112, which may use this information at the terminal station 106 ( Figure 4 (Not shown) The speed, position, and / or orientation of the stage 134 in the path of the ion beam 140 are adjusted. Adjusting the speed, position, and / or orientation of the stage 134 in the path of the ion beam 140 ensures that the ion beam dose is applied uniformly and / or equally to the substrate 136 positioned on the stage 134. This contrasts with conventional systems, which lack the ability to track how the ion beam is applied to the substrate and suffer from photoresist degassing, resulting in uneven application of the ion beam to the substrate.

[0078] The dose compensation process can be initiated, for example, when the self-energy mode controller 108 (and specifically the bundle current measurement component controller 208 of the self-energy mode controller 108) receives a trigger dose compensation command 416. Alternatively or additionally, the dose compensation controller processing component 410 can be configured to initiate the execution of the dose compensation process once one or more current values ​​402 to 408 are received. Furthermore, the dose compensation controller processing component 410 can continuously execute the dose compensation process to generate updated speed, position, and / or orientation data for the platform 134 and / or updated terminal current values. The dose compensation controller processing component 410 can also query (e.g., periodically, continuously, and / or at any desired intervals) the power supplies 118, 124, 126, and / or the filter power supply 128 and request updated data / information related to the current values. This allows the dose compensation controller processing component 410 to dynamically and / or instantly update the velocity, position and / or orientation data and / or terminal current values ​​of the stage 134, thereby further ensuring that the ion beam is uniformly applied to the substrate 136.

[0079] Once the positioning data is determined, the dose compensation controller processing component 410 generates a scan (e.g., speed, position, and / or orientation) control command 414 and provides it to the implanted dose controller 112. The implanted dose controller 112 then triggers the stage adjustment mechanism 132 to adjust the speed, position, and / or orientation of the stage 134 accordingly. Once the dose compensation controller processing component 410 determines the command 414, it can supply the command 414 to the implanted dose controller 112, and the command 414 can be periodic, continuous, etc. Similarly, the dose compensation controller processing component 410 generates a terminal current value 412 and provides it to the implanted dose controller 112 to adjust the current supplied by the system 100 during operation, which in turn affects how the ion beam is guided to the substrate 136. This again ensures that the ion beam is applied more uniformly to the substrate. Value 412 and instruction 414 may be provided separately and / or together.

[0080] In some embodiments, the dose compensation controller processing component 410 may be configured to include the processing component 210 of the energy mode controller 108 and / or the processing component 304 of the energy filter current measurement component 130. Furthermore, the dose compensation controller 110 may be configured to combine one or more of the energy mode controller 108, the filter current measurement component 130, and the implanted dose controller 112, and / or may be configured to perform one or more functions performed by one or more of the energy mode controller 108, the filter current measurement component 130, and the implanted dose controller 112, in addition to the functions performed by the dose compensation controller 110.

[0081] Figure 5Examples of processing components 510 of a dose compensation controller according to some embodiments of the present subject are shown. Processing component 510 may be similar to processing components 210, 304, 410 and / or any other processing component of system 100 and may include input / output (I / O) devices 507, processor 509, memory 511, and memory 513. Each of components 507 to 513 may be interconnected using system bus 515. Processor 509 may be configured to process instructions for execution within processing component 510. In some embodiments, processor 509 may be a single-threaded processor. Alternatively or additionally, processor 509 may be a multi-threaded processor. Processor 509 may be further configured to process instructions (including, but not limited to, receiving and / or sending information via I / O devices 507) stored in memory 511 and / or memory 513. Memory 511 may store information within processing component 510. In some embodiments, memory 511 may be a computer-readable medium. Alternatively or additionally, memory 511 may be a volatile memory cell. In yet another embodiment, memory 511 may be a non-volatile memory cell. Memory 513 may be able to provide mass storage for processing component 510. In some embodiments, memory 513 may be a computer-readable medium. Alternatively or additionally, memory 513 may be a floppy disk device, hard disk device, optical disk device, magnetic tape device, non-volatile solid-state memory, or any other type of storage device. I / O device 507 may provide input / output operations for processing component 510. In some embodiments, I / O device 507 may include a keyboard and / or pointing device. Alternatively or additionally, I / O device 507 may include a display unit for displaying a graphical user interface.

[0082] In some exemplary embodiments, one or more components of processing component 510 (and / or system 100) may include any combination of hardware and / or software. In some embodiments, one or more components of system 100 may be located on one or more computing devices, such as servers, databases, personal computers, laptops, cellular phones, smartphones, tablets, virtual reality devices, and / or any other computing devices and / or any combination thereof. In some exemplary embodiments, one or more components of processing component 510 may be located on a single computing device and / or may be part of a single communications network. Alternatively or additionally, such services may be placed separately from each other. Services may be computing processors, memory, software functions, routines, programs, calls, and / or any combination thereof, and these services may be configured to perform specific functions associated with the current target's lifecycle orchestration service.

[0083] In some implementations, one or more components of processing component 510 may include a network-enabled computer. As described herein, a network-enabled computer may include, but is not limited to, computer devices or communication devices, including, for example, servers, network appliances, personal computers, workstations, telephones, smartphones, handheld PCs, personal digital assistants, thin clients, fat clients, internet browsers, or other devices. One or more components of system 100 may also be mobile computing devices, such as Apple®'s iPhone, iPod, iPad, and / or any other suitable device running Apple's iOS® operating system, any device running Microsoft's Windows® operating system, any device running Google's Android® operating system, and / or any other suitable mobile computing device, such as a smartphone, tablet, or similar wearable mobile device.

[0084] One or more components of processing component 510 may include a processor and memory, and it should be understood that the processing circuitry may include additional components necessary to perform the functions set forth herein, including a processor, memory, error and cyclic redundancy check (CRC) checker, data encoder, anti-collision algorithm, controller, command decoder, security primitive, and tamper-proofing hardware. One or more components of processing component 510 may also include one or more displays and / or one or more input devices. Displays may be any type of device for presenting visual information, such as a computer monitor, flat panel display, and mobile device screen (including liquid crystal displays, light-emitting diode displays, plasma panels, cathode ray tube displays, or other displays). Input devices may include any device for entering information into a user device, any such device being available and supported by the user device (e.g., a touchscreen, keyboard, mouse, cursor control device, microphone, digital camera, camcorder, or video recorder). These devices may be used to enter information and interact with the software and other devices set forth herein.

[0085] In some exemplary embodiments, one or more components of processing component 510 may execute one or more applications (e.g., software applications) that communicate with, for example, one or more components of processing component 510 via a network and transmit and / or receive data.

[0086] One or more components of processing component 510 may include one or more servers and / or communicate with one or more servers via one or more networks, and may operate with one or more servers as corresponding front-end to back-end pairs. One or more components of processing component 510 may, for example, transmit one or more requests to one or more servers from a mobile device application (e.g., executing on one or more user devices, components, etc.). The requests may be associated with retrieving data from the server. The server may receive the requests from a component of processing component 510. Based on the requests, the server may be configured to retrieve the requested data from one or more databases. Based on the received requested data from the databases, the server may be configured to transmit the received data to one or more components of processing component 510, wherein the received data may respond to one or more requests.

[0087] Processing component 510 may include one or more networks and / or may be communicatively coupled to one or more networks. In some embodiments, the network may be one or more of a wireless network, a wired network, or any combination of wireless and wired networks and may be configured to connect components of processing component 510 and / or components of processing component 510 to one or more servers. For example, networks may include fiber optic networks, passive optical networks, cable networks, Internet networks, satellite networks, local area networks (LANs), metropolitan area networks (MANs), wide area networks (WANs), virtual local area networks (VLANs), inter-enterprise networks, intranets, global mobile communication systems, personal communication services, personal area networks, wireless application protocols, multimedia messaging services, enhanced messaging services, short message services, time-division multiplexing systems, code division multiple access systems, D-AMPS, Wi-Fi, fixed wireless data, IEEE 802.11b, 802.15.1, 802.11n and 802.11g, Bluetooth, Near Field Communication (NFC), Radio Frequency Identification (RFID), Wi-Fi and / or any other type of network and / or any combination thereof.

[0088] Additionally, the network may include, but is not limited to, telephone lines, fiber optics, IEEE Ethernet 802.3, wide area networks, wireless personal area networks, LANs, or global networks such as the Internet. Furthermore, the network may support Internet networks, wireless communication networks, cellular networks, or similar networks, or any combination thereof. These networks may also include one or any number of networks of the aforementioned exemplary types, which operate as independent networks or collaboratively with each other. The network may utilize one or more protocols of one or more network elements communicatively coupled thereto. The network may perform translation between other protocols and one or more protocols of the network device. The network may include multiple interconnected networks, such as (for example) the Internet, service provider networks, cable television networks, corporate networks, and home networks.

[0089] Processing component 510 may include one or more servers and / or be communicatively coupled to one or more servers, said one or more servers may include one or more processors that can be coupled to memory. A server may be configured as a central system, server, or platform to control and invoke various data at different times to execute multiple workflow actions. A server may be configured to connect to said one or more databases. A server may be integrated into at least one of the components of processing component 510 and / or communicatively coupled to at least one of the components of processing component 510.

[0090] Figure 6 An exemplary dose compensation process 600 according to some embodiments of the present target is shown. Process 600 may be manufactured by... Figure 1 The system 100 shown is executed by one or more components.

[0091] At 602, system 100 may receive one or more system operating parameters or inputs. For example, one or more input components (e.g., a graphical user interface communicatively coupled to processing component 510) may be used to receive input. Inputs may include a specific energy level used to generate (and / or modify) an ion beam for implantation into a substrate (e.g., Figure 1 The substrate 136 shown is also included. Furthermore, the input may include an indication of whether a dose compensation process will be enabled (e.g., determining the speed, position, and / or orientation of the stage in the path of the ion beam). Additionally, a value for the dose compensation factor K may be received (as in procedure (4)). It is understood that any dose compensation factor value may be used, and any dose compensation factor value may be determined depending on the specific product desired.

[0092] Once the system operating parameters are received, the energy mode controller 108 can determine at 604 whether a specific operating mode (e.g., acceleration or deceleration mode) has been selected. If the acceleration mode is enabled, the energy mode controller 108 can send a command to the switch 120, causing the acceleration power supply 124 (and / or power supply 118) to initiate the following operation: supplying current to the beam assembly 102. Furthermore, the energy mode controller 108 (and / or the dose compensation controller 110) can determine at 608 whether the dose compensation process has been enabled. If not, the dose compensation controller 110 can determine at 610 the terminal station current (I0) at the start of each scan of the substrate 136 by the ion beam 140 in the terminal station 106. ES0 The system 100 can then perform ion implantation on the substrate 136 at 626 while controlling the substrate scanning position using the terminal station current.

[0093] If dose compensation is enabled at 608 (as determined by energy mode controller 108 and / or dose compensation controller 110), then energy mode controller 108 and / or dose compensation controller 110 may enable and / or initiate dose compensation at 612 (as discussed herein). Dose compensation controller 110 may then use an accelerating current (I0) at 614. ACC ) and energy filter current (I FILT The terminal station current is continuously updated, and then, at 626, the terminal station current is used to perform ion implantation on the substrate 136 while controlling the substrate scanning position.

[0094] If the deceleration mode is enabled at 604, the energy mode controller 108 can send a command to switch 122 at 616 to close (and open) switch 120, allowing power supply 126 to provide power to the wire assembly 102. At 618, the energy mode controller 108 (and / or dose compensation controller 110) can determine whether the dose compensation process has been enabled. If not, the dose compensation controller 110 can determine the terminal current (I0) at 620 at the start of each scan of the substrate 136 by the ion beam 140 in the terminal station 106. ES0 Then, at 626, while controlling the substrate scanning position, ion implantation can be performed on substrate 136 using the determined terminal station current.

[0095] If dose compensation is enabled at 618, energy mode controller 108 and / or dose compensation controller 110 may enable and / or initiate dose compensation at 622 (as discussed herein). Dose compensation controller 110 may use a decelerated current (I0) at 624. DEC ) and energy filter current (I FILTThe terminal station current is continuously updated, and then, at 626, while controlling the substrate scanning position, the terminal station current is used to perform ion implantation on the substrate 136.

[0096] Figure 7 An exemplary dose compensation process 700 according to some embodiments of the present target is shown. Process 700 may be manufactured by... Figure 1 The system 100 shown is executed by one or more components (specifically, the processing component 510 of the system 100).

[0097] At 702, the processing component 510 may be configured to receive a first current value (e.g., value 402) associated with a supply current (e.g., from power source 118) supplying power to an ion source (e.g., ion source 116) of an ion implantation device (e.g., system 100). At 704, the processing component 510 may also receive a second current value (e.g., values ​​404 and 406, respectively) associated with an accelerating potential (e.g., from power source 124) or a decelerating potential (e.g., from power source 126) supplied to the ion implantation device. The accelerating and / or decelerating potentials may influence the generation of one or more ion beams (e.g., ion beam 138) by the ion source, which are applied to a substrate (e.g., substrate 136) positioned on a stage (e.g., stage 134).

[0098] The supply of acceleration and / or deceleration potentials can be controlled using energy mode controller 108 via corresponding switches 120 and 122. The acceleration potential can be configured to increase the power of the ion beam. Conversely, the deceleration potential can be configured to decrease the power of the ion beam. In some embodiments, the application of the deceleration potential can be disabled (e.g., by opening or keeping switch 122 open) while the application of the acceleration potential is enabled (e.g., by closing switch 120). Conversely, the application of the acceleration potential can be disabled (e.g., by opening or keeping switch 120 open) while the application of the deceleration potential is enabled (e.g., by closing switch 122). In the latter case, the ion source power supply 118 can also be connected to ground.

[0099] At 706, the processing component 510 may determine one or more energy filter supply current values ​​(e.g., value 408) associated with one or more energy filter supply potentials supplied (e.g., by filter power supply 128) to one or more energy filters (e.g., filter 102) located in the path of the ion beam.

[0100] The energy filter may include one or more electrodes (e.g., electrode 127) configured to influence one or more parameters of the ion beam passing through the energy filter. These parameters may include at least one of the following: the direction of the ion beam, the power of the ion beam, the focus of the ion beam, the trajectory of the ion beam, and / or any other parameter, and / or any combination thereof.

[0101] At 708, processing component 510 may generate one or more platform position values ​​(e.g., scan position control command 414) based on a first current value, a second current value, and one or more energy filter supply current values. For example, processing component 510 may use procedure (1) to determine the platform position value based on the difference between the sum of the first current value and the second current value and the one or more energy filter supply current values.

[0102] At 710, the processing component 510 can use the platform position value to adjust the position of the platform in the path of the ion beam. For example, this can be achieved by sending a command 414 to the implanted dose controller 112, which can trigger the platform mechanism 132 to adjust the position of the platform 134.

[0103] In some embodiments, adjusting the position of the stage based on the stage position value allows the ion beam to be applied to a predetermined location on the substrate. Alternatively or additionally, the determination of the processing component 510 may also trigger adjustments to one or more electrode parameters associated with one or more electrodes in the energy filter. Electrode parameters may include at least one of the following: one or more current values ​​of one or more currents supplied to one or more electrodes, one or more position values ​​associated with one or more positions of one or more electrodes in the energy filter, and any combination thereof.

[0104] References Figures 1 to 7The various elements of the components described can include various hardware elements, software elements, or combinations of both. Examples of hardware elements can include devices, logic devices, components, processors, microprocessors, circuits, circuit elements (e.g., transistors, resistors, capacitors, inductors, etc.), integrated circuits, application-specific integrated circuits (ASICs), programmable logic devices (PLDs), digital signal processors (DSPs), field-programmable gate arrays (FPGAs), memory cells, logic gates, registers, semiconductor devices, wafers, microchips, wafer sets, etc. Examples of software elements can include software components, programs, applications, computer programs, application programs, system programs, software development programs, machine programs, operating system software, middleware, firmware, software modules, constants, sub-constants, functions, methods, programs, software interfaces, application program interfaces (APIs), instruction sets, computational codes, computer codes, code segments, computer code segments, characters, values, symbols, or any combination thereof. However, the determination of whether an implementation scheme uses hardware and / or software components can vary depending on any number of factors desired for a given implementation scheme, such as: desired computing speed, power level, heat resistance, dielectric material used, processing cycle budget, input data rate, output data rate, memory resources, data bus speed, and other design or performance constraints.

[0105] At least one embodiment, in one or more forms, can be implemented by representational instructions stored on a machine-readable medium, which represent various logics within a processor, and which, when read by a machine, cause the machine to construct the logic to implement the techniques described herein. This representation, referred to as an "IP core," can be stored on a tangible machine-readable medium and supplied to various clients or manufacturing facilities for loading into manufacturing machines used to construct logic or processors. Some embodiments can be implemented, for example, using machine-readable media or articles that can store instructions or sets of instructions, which, when executed by a machine, cause the machine to perform methods and / or operations according to the embodiment. Such machines can include, for example, any suitable processing platform, computing platform, computing device, processing device, computing system, processing system, computer, processor, or similar device, and can be implemented using any suitable combination of hardware and / or software. Machine-readable media or articles may include, for example, any suitable type of memory unit, memory device, memory article, memory media, storage device, storage article, storage medium and / or storage unit, such as memory, removable or non-removable media, erasable or non-erasable media, writable or rewritable media, digital or analog media, hard disk, floppy disk, compact disk read-only memory (CD-ROM), compact disk recordable (CD-R), compact disk rewriteable (CD-RW), optical disk, magnetic media, magneto-optical media, removable memory cards or discs, various types of digital versatile discs (DVDs), magnetic tape, cassette drives, or similar devices. Instructions may include any suitable type of code implemented using any suitable high-level, low-level, object-oriented, visual, compiled, and / or interpreted procedural language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encryption code, and similar code.

[0106] The components and features of the aforementioned devices may be implemented using any combination of discrete circuit systems, application-specific integrated circuits (ASICs), logic gates, and / or single-chip architectures. Furthermore, where appropriate, the features of the devices may be implemented using microcontrollers, programmable logic arrays, and / or microprocessors, or any combination of the aforementioned devices. Note that hardware elements, firmware elements, and / or software elements may be collectively referred to herein or individually as “logic” or “circuit”.

[0107] It should be understood that the exemplary device shown in the above block diagram may represent a functionally descriptive example of many potential embodiments. Therefore, the division, omission, or inclusion of block functions shown in the figures does not imply that hardware components, circuits, software, and / or elements used to implement those functions must be divided, omitted, or included in the embodiments.

[0108] At least one computer-readable storage medium may contain instructions that, when executed, cause the system to perform any of the computer implementation methods set forth herein.

[0109] The expressions "one implementation" or "implementation" and their derivatives may be used to describe several implementations. These terms indicate that a particular feature, structure, or characteristic described in connection with an implementation is included in at least one implementation. The phrase "in one implementation" appearing in various places in the specification does not necessarily refer to the same implementation. Furthermore, unless otherwise stated, the aforementioned features are considered to be used in any combination. Therefore, unless it is stated that any features discussed individually are incompatible with each other, they may be used in combination with each other.

[0110] It is important to emphasize that the abstract of the disclosure is provided to enable the reader to quickly determine the nature of this technical disclosure. The abstract is submitted based on the understanding that it will not be used to interpret or limit the scope or meaning of the claims. Furthermore, as can be seen in the preceding detailed description, various features are grouped together in a single embodiment for the purpose of simplifying this disclosure. This approach of the disclosure should not be construed as reflecting an intention that the claimed embodiment requires more features than expressly described in each claim. Rather, as reflected in the following claims, the subject matter of the invention lies in fewer features than all the features of a single disclosed embodiment. Therefore, the following claims are hereby incorporated into the embodiments, wherein each claim exists as a separate embodiment. In the appended claims, the terms “including” and “in which” are used as concise English equivalents to the corresponding terms “comprising” and “wherein,” respectively. Furthermore, the terms “first,” “second,” “third,” etc., are used only as labels and are not intended to impose numerical requirements on their objects.

[0111] The foregoing description includes examples of the disclosed architecture. It is impossible to describe every conceivable combination of components and / or methods, but those skilled in the art will recognize that many further combinations and arrangements are possible. Therefore, the novel architecture is intended to cover all such alterations, modifications, and variations that fall within the spirit and scope of the appended claims.

[0112] The foregoing description of exemplary embodiments has been presented for purposes of illustration and explanation. This description is not intended to be exhaustive or to limit this disclosure to its precise form. Many modifications and variations are possible with respect to this disclosure. The scope of this disclosure is intended to be limited not by this detailed description, but by the scope of the appended claims. Future applications claiming priority over this application may claim the subject matter disclosed in different ways and, generally may include any set of one or more limitations disclosed or otherwise shown herein.

Claims

1. An ion implantation device, comprising: An ion source is configured to generate an ion beam that is directed and positioned on a substrate on a platform. A first power source is configured to generate a power supply potential for supplying power to the ion source; One or more second power sources are configured to generate accelerating or decelerating potentials, which are configured to influence the generation of the ion beam by the ion source, the ion beam being applied to the substrate. An energy filter is positioned in the path of the ion beam between the ion source and the substrate; The dose compensation controller is configured to: A first current value is determined based on the power supply potential supplying power to the ion source, and a second current value is determined based on the acceleration potential or the deceleration potential. The supply current value of one or more energy filters is determined based on the supply potential of one or more energy filters supplied to the energy filters; One or more platform position values ​​are generated based on the first current value, the second current value, and the supply current values ​​of the one or more energy filters. as well as This allows the position of the plate in the path of the ion beam to be adjusted using one or more plate position values.

2. The device according to claim 1, wherein The accelerating potential is configured to increase the energy of the ion beam; The deceleration potential is configured to reduce the energy of the ion beam.

3. The device according to claim 1, wherein The application of the acceleration potential is enabled while the application of the deceleration potential is disabled; and The application of the deceleration potential is enabled while the application of the acceleration potential is disabled.

4. The device of claim 1, wherein the energy filter comprises one or more electrodes configured to influence one or more parameters of the ion beam passing through the energy filter.

5. The device of claim 4, wherein the one or more parameters include at least one of the following: the direction of the ion beam, the energy of the ion beam, the focal point of the ion beam, the trajectory of the ion beam, and any combination thereof.

6. The device of claim 1, wherein the one or more platform position values ​​are determined based on the difference between the sum of the first current value and the second current value and the supply current value of the one or more energy filters.

7. The apparatus of claim 6, wherein the position of the stage is adjusted based on the one or more stage position values ​​such that the ion beam is applied to a predetermined position on the substrate.

8. The device of claim 6, wherein the dose compensation controller includes a filter current measurement component configured to adjust one or more electrode parameters associated with one or more electrodes in the energy filter.

9. The device of claim 8, wherein the one or more electrode parameters include at least one of the following: one or more current values ​​determined based on one or more potentials supplied to the one or more electrodes, one or more position values ​​associated with one or more positions of the one or more electrodes in the energy filter, and any combination thereof.

10. An ion implantation system, comprising: An ion source is configured to generate an ion beam that is directed and positioned on a substrate on a platform. A first power source is configured to generate a power supply potential for supplying power to the ion source, wherein a first current value is determined based on the power supply potential. One or more second power sources are configured to generate one or more second potentials, said one or more second potentials being configured to influence the generation of the ion beam by the ion source, said ion beam being applied to the substrate, wherein a second current value is determined based on said one or more second potentials; An energy filter is positioned in the path of the ion beam between the ion source and the substrate; At least one processor; as well as At least one non-transitory storage medium, storage instructions, said instructions causing the at least one processor, when executed by said at least one processor, to: The supply current value of one or more energy filters is determined based on the supply potential of one or more energy filters supplied to the energy filters; One or more platform position values ​​are generated based on the first current value, the second current value, and the supply current values ​​of the one or more energy filters. as well as This allows the position of the plate in the path of the ion beam to be adjusted using one or more plate position values.

11. The system of claim 10, wherein the one or more second power supply potentials include acceleration potentials or deceleration potentials; The one or more second current sources are configured to To generate the accelerating potential to increase the power of the ion beam; and The deceleration potential is generated to reduce the power of the ion beam.

12. The system of claim 11, wherein the one or more second power sources are configured to perform at least one of the following: Disable the application of the deceleration potential and enable the application of the acceleration potential; and Disable the application of the acceleration potential and enable the application of the deceleration potential.

13. The system of claim 10, wherein the energy filter comprises one or more electrodes configured to influence one or more parameters of the ion beam passing through the energy filter.

14. The system of claim 13, wherein the one or more parameters include at least one of the following: the direction of the ion beam, the energy of the ion beam, the focal point of the ion beam, the trajectory of the ion beam, and any combination thereof.

15. The system of claim 10, wherein the one or more platform position values ​​are determined based on the difference between the sum of the first current value and the second current value and the supply current value of the one or more energy filters.

16. The system of claim 15, wherein the position of the stage is adjusted based on the one or more stage position values ​​such that the ion beam is applied to a predetermined position on the substrate.

17. The system of claim 15, wherein one or more electrode parameters are associated with one or more electrodes in the energy filter, and the at least one processor is configured to trigger an adjustment of the one or more electrode parameters.

18. The system of claim 17, wherein the one or more electrode parameters include at least one of the following: one or more current values ​​determined based on one or more potentials supplied to the one or more electrodes, one or more position values ​​associated with one or more positions of the one or more electrodes in the energy filter, and any combination thereof.

Images