Substrate processing apparatus and substrate temperature control method

Abstract

The present application provides a substrate processing apparatus and a substrate temperature control method. In the present application, a temperature of a stage on which a substrate is placed, a temperature of a cooling mechanism provided on the stage and cooling the stage, and a heat generation amount of a heating mechanism provided between a substrate placing surface of the stage on which the substrate is placed and the cooling mechanism and heating the stage are periodically acquired by an acquisition unit. A calculation formula for predicting a substrate temperature using the heat generation amount of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, a time differential amount of the temperature of the stage, and a time differential amount of the temperature of the cooling mechanism is used by a prediction unit to predict the substrate temperature based on the heat generation amount of the heating mechanism, the temperature of the stage, and the temperature of the cooling mechanism, and the time differential amount of the temperature of the stage and the time differential amount of the temperature of the cooling mechanism acquired by the acquisition unit. A heat generation control unit controls the heat generation amount of the heating mechanism so that the substrate temperature predicted by the prediction unit becomes a prescribed temperature.

Description

Technical Field

[0001] This invention relates to a substrate processing apparatus and a substrate temperature control method. Background Technology

[0002] Patent Document 1 discloses: "A plasma processing apparatus comprising: a processing chamber capable of depressurization and exhaust; a sample stage disposed within the processing chamber and having a sample placement surface on which a substrate to be processed is placed; a plasma generating device for generating plasma within the processing chamber; a heat transfer gas supply system for supplying heat transfer gas to the sample placement surface; and a refrigerant passage disposed within the sample stage for circulating refrigerant, the sample stage having a heater layer disposed between the sample placement surface and the refrigerant passage, the heater layer being formed in a radial direction of the sample placement surface in a manner dividing it into multiple regions; the plasma processing apparatus comprising: a temperature monitor disposed within the sample stage near the heater layer and at a position corresponding to each of the divided regions of the heater layer; and a temperature control device that, based on temperature information from each of the temperature monitors, calculates the temperature of the substrate to be processed placed on the sample placement surface at the position corresponding to each of the divided regions, and controls the electrical power supply to the heater layer of each divided region based on the calculated temperature value."

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-177285 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] This invention provides a technique for controlling substrate temperature with high precision.

[0008] Technical solutions for solving technical problems

[0009] One aspect of the substrate processing apparatus of the present invention includes a mounting stage, a chamber, a cooling mechanism, a heating mechanism, a measuring unit, an acquisition unit, a prediction unit, and a heat control unit. The mounting stage is capable of mounting a substrate. The chamber houses the mounting stage, and a heat source is present in the chamber, supplying heat to the substrate mounted on the mounting stage. The cooling mechanism is provided on the mounting stage to cool it. The heating mechanism is provided between the mounting surface of the substrate on the mounting stage and the cooling mechanism, and can control the heat generation to heat the mounting stage. The measuring unit measures the temperature of the mounting stage. The acquisition unit periodically acquires the heat generation of the heating mechanism, the temperature of the mounting stage, and the temperature of the cooling mechanism. The prediction unit uses a calculation formula to predict the substrate temperature based on the heat generation of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism, and predicts the substrate temperature based on the heat generation of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, and the time derivatives of the temperature of the mounting stage and the temperature of the cooling mechanism acquired by the acquisition unit. The heating control unit controls the heat generated by the heating mechanism so that the substrate temperature predicted by the prediction unit becomes the specified temperature.

[0010] Invention Effects

[0011] According to the present invention, the temperature of the substrate can be controlled with high precision. Attached Figure Description

[0012] Figure 1 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0013] Figure 2 This is a plan view illustrating an example of the structure of the electrostatic chuck in the embodiment.

[0014] Figure 3 This is a cross-sectional view showing an example of the structure of the electrostatic chuck in the embodiment.

[0015] Figure 4 This is a block diagram showing the general structure of the control unit in the implementation method.

[0016] Figure 5 This is a diagram illustrating an example of the thermal circuit of the substrate and main body in an embodiment.

[0017] Figure 6 This is a flowchart illustrating an example of the substrate temperature control process in an implementation method. Detailed Implementation

[0018] Hereinafter, embodiments of the substrate processing apparatus and substrate temperature control method disclosed in this application will be described in detail with reference to the accompanying drawings. However, the disclosed substrate processing apparatus and substrate temperature control method are not limited to these embodiments.

[0019] Heat treatment apparatuses are known for performing heat treatments such as plasma processing and ashing on substrates such as semiconductor wafers (hereinafter also referred to as "wafers"). In some of these substrate processing apparatuses, a heater is provided in the mounting section on which the substrate is mounted, and a flow path for the flow of a cooling medium is formed. By utilizing the heating of the heater and the cooling of the cooling medium flowing in the flow path, the temperature of the mounting section is controlled, thereby controlling the temperature of the substrate.

[0020] However, in substrate processing equipment, heat is input to the substrate from heat sources such as plasma and heated components inside the chamber, which sometimes makes it impossible to control the substrate temperature with high precision.

[0021] Therefore, a technology capable of controlling substrate temperature with high precision is needed in substrate processing devices.

[0022] [Implementation Method]

[0023] [Device Structure]

[0024] An example of the substrate processing apparatus of the present invention will be described. In the embodiments described below, the case of a plasma processing system in which the substrate processing apparatus of the present invention is implemented for plasma processing will be used as an example.

[0025] The following describes a structural example of a plasma processing system. Figure 1 This is a diagram illustrating a structural example of a capacitively coupled plasma processing device.

[0026] The plasma processing system includes a capacitively coupled plasma processing device 1 and a control unit 100. The capacitively coupled plasma processing device 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. Furthermore, the plasma processing device 1 includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a spray head 13. The substrate support 11 is disposed within the plasma processing chamber 10. The spray head 13 is disposed above the substrate support 11. In one embodiment, the spray head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the spray head 13, the sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas outlet for discharging gas from the plasma processing space. The plasma processing chamber 10 is grounded. The spray head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0027] The substrate support portion 11 includes a main body portion 111 and a ring assembly 112. The main body portion 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body portion 111 surrounds the central region 111a of the main body portion 111 when viewed from above. The substrate W is disposed on the central region 111a of the main body portion 111, and the ring assembly 112 is disposed on the annular region 111b of the main body portion 111 in such a way that it surrounds the substrate W on the central region 111a of the main body portion 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as an annular support surface for supporting the ring assembly 112.

[0028] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b disposed within the ceramic component 1111a. The ceramic component 1111a has a central region 111a. In one embodiment, the ceramic component 1111a also has an annular region 111b. In addition, other components surrounding the electrostatic chuck 1111, such as the annular electrostatic chuck 1111 and an annular insulating component, may also have an annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. Furthermore, at least one RF / DC electrode coupled to the RF (Radio Frequency) power supply 31 and / or DC (Direct Current) power supply 32, described later, can be disposed within the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When the bias RF signal and / or DC signal, described later, are supplied to the at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. Additionally, the conductive components of the base 1110 and the at least one RF / DC electrode can also function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b can also function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0029] The ring assembly 112 includes one or more annular components. In one embodiment, the one or more annular components include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover ring is formed of an insulating material.

[0030] Furthermore, the substrate support 11 may also include a temperature regulation module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature regulation module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas flows in the flow path 1110a. In one embodiment, the flow path 1110a is formed within the base 1110, and one or more heaters are disposed within the ceramic component 1111a of the electrostatic chuck 1111. The flow path 1110a is connected at both ends to pipes 14a, which connect it to a cooler unit 14. The cooler unit 14 stores a refrigerant, such as brine, and supplies the stored refrigerant to one pipe 14a. The refrigerant supplied from the cooler unit 14 is supplied to the flow path 1110a via one pipe 14a, flows from one end of the flow path 1110a to the other end, and returns to the cooler unit 14 via another pipe 14a. The cooler unit 14 is configured to change the temperature of the stored refrigerant. Furthermore, the cooler unit 14 has a built-in temperature sensor capable of measuring the temperature of the supplied refrigerant. The cooler unit 14 changes the temperature of the stored refrigerant according to control from the control unit 100. Additionally, the cooler unit 14 outputs the refrigerant temperature measured by the temperature sensor to the control unit 100. The plasma processing apparatus 1 is configured to control the temperature of the main body 111 by circulating the refrigerant, whose temperature is controlled by the cooler unit 14, in the flow path 1110a for cooling and by heating it with a heater. In this embodiment, the main body 111 corresponds to the mounting stage of the present invention. Furthermore, in this embodiment, the central region 111a corresponds to the mounting surface of the present invention. Furthermore, in this embodiment, the refrigerant, the flow path 1110a, etc., correspond to the cooling mechanism of the present invention.

[0031] Here, the structure of the electrostatic chuck 1111 of the substrate support portion 11 will be described. Figure 2 This is a plan view showing an example of the structure of the electrostatic chuck 1111 according to the embodiment. Figure 3 This is a cross-sectional view showing an example of the structure of the electrostatic chuck 1111 according to the embodiment.

[0032] Figure 2 A plan view of the upper surface of the electrostatic chuck 1111 is shown. The upper surface of the electrostatic chuck 1111 is divided into a central region 111a and an annular region 111b. The central region 111a is a generally circular region when viewed from above. A substrate W can be placed on the upper surface of the central region 111a. The diameter of the central region 111a is approximately the same as or slightly smaller than the diameter of the substrate W. The annular region 111b is the region surrounding the central region 111a and extends in a generally annular shape. In one embodiment, the upper surface of the annular region 111b is located at a lower position than the upper surface of the central region 111a.

[0033] Central region 111a is divided into several regions A1 to A14. Hereinafter, without specifically distinguishing each of regions A1 to A14, they will be collectively referred to as region A. Each region A is a subdivision of central region 111a and constitutes a part of central region 111a. For example, as... Figure 2 As shown, the central region 111a is divided into a circular region A1 at its center. Furthermore, the central region 111a is divided into multiple concentric annular regions starting from the circular region A1, and each of these annular regions is further divided into multiple arc-shaped regions A2 to A14 in the circumferential direction. The arc-shaped regions A2 to A14 have smaller angular spans as they approach the outer perimeter. A flow path 1110a is formed within the base 1110 such that it passes through the lower part of all regions A. Additionally, Figure 2 The method of dividing region A shown is an example and is not limited to it. For example, the central region 111a can also be divided such that the radial width of the arc-shaped region A narrows as it approaches the outer perimeter. Alternatively, the central region 111a can be divided into regions A concentrically from the center at certain angles. Furthermore, the central region 111a can be divided into a grid-like pattern of regions A. Additionally, to finely control the temperature distribution of the central region 111a, it can be divided into more regions A. For example, the central region 111a can be divided into more than 100 regions A. Moreover, Figure 2 The method of dividing region A shown illustrates the case where the annular region 111b is not divided, but it is not limited to this. The annular region 111b can also be divided into multiple regions A. For example, the annular region 111b can be divided into multiple arc-shaped regions A in the circumferential direction.

[0034] The electrostatic chuck 1111 is equipped with a heater HT and a temperature sensor TS in each area A. Figure 3 The diagram schematically shows partial cross-sections of two regions A of the electrostatic chuck 1111. An electrostatic electrode 1111b is disposed within the ceramic component 1111a. Furthermore, within the ceramic component 1111a, a heater HT and a temperature sensor TS are disposed in each region A. The heater HT heats up by being supplied with electrical power, heating region A. In this embodiment, the heater HT corresponds to the heating mechanism of the present invention. Additionally, in this embodiment, the temperature sensor TS corresponds to the measuring unit of the present invention.

[0035] return Figure 1 Each heater HT is connected to the heater power supply 60. Each temperature sensor TS is connected to the temperature detection unit 61. Additionally, in... Figure 1 In this design, the wiring connecting each heater HT to the heater power supply 60, and each temperature sensor TS to the temperature detection unit 61 is partially omitted.

[0036] The heater power supply 60 supplies electrical power to each heater HT. The heater power supply 60 can individually adjust the electrical power supplied to each heater HT. For example, the heater power supply 60 controls the electrical power supplied to each heater HT using PWM (Pulse Width Modulation). In PWM control, the output electrical power is controlled by periodically switching between ON and OFF within a cycle. The heater power supply 60 is configured to supply a predetermined electrical power to each heater HT, and controls the electrical power supplied to each heater HT by changing the proportion (duty cycle) of the on period within a cycle. The heater power supply 60 adjusts the electrical power supplied to each heater HT according to control data input from the control unit 100. For each heater HT, heat generation can be controlled by performing PWM control on the supplied electrical power. Each heater HT uses the electrical power supplied from the heater power supply 60 to generate heat, heating region A respectively.

[0037] The temperature detection unit 61 measures the resistance value of each temperature sensor TS, and detects the temperature of each temperature sensor TS located in each region A based on the measured resistance value.

[0038] Alternatively, the temperature sensor TS can also be made of a material whose resistance changes with temperature. For example, the temperature sensor TS is a thermistor. Alternatively, the temperature sensor TS can also be a thin film formed from any material selected from tungsten, nickel, molybdenum, copper, silver, platinum, and aluminum. The temperature detection unit 61 can measure the current and voltage of the electrical power supplied to each temperature sensor TS, calculate the resistance value of each temperature sensor TS based on the measured current and voltage, and detect the temperature of the main body 111 of each region A based on the calculated resistance value.

[0039] The spray head 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The spray head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and a plurality of gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s through the plurality of gas inlets 13c. Furthermore, the spray head 13 includes at least one upper electrode. In addition to the spray head 13, the gas inlet unit may also include one or more side gas injectors (SGIs) installed in one or more openings formed in the sidewall 10a.

[0040] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one type of process gas from a corresponding gas source 21 to the spray head 13 via a corresponding flow controller 22. Each flow controller 22 may, for example, include a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may also include one or more flow modulation devices for modulating or pulsedizing the flow rate of the at least one type of process gas.

[0041] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes at least one processing gas supplied to the plasma processing space 10s to form plasma. Therefore, the RF power supply 31 can function as at least part of a plasma generation unit configured to generate plasma from one or more processing gases within the plasma processing chamber 10. Furthermore, by supplying a bias RF signal to at least one lower electrode, a bias potential is generated on the substrate W, which can attract the ionic components of the formed plasma to the substrate W.

[0042] In one embodiment, the RF power supply 31 includes a first RF generation unit 31a and a second RF generation unit 31b. The first RF generation unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generation source RF signal (generation source RF power) for plasma generation. In one embodiment, the generation source RF signal has a frequency in the range of 10MHz to 150MHz. In one embodiment, the first RF generation unit 31a may be configured to generate multiple generation source RF signals with different frequencies. The generated one or more generation source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0043] The second RF generation unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit 31b may be configured to generate multiple bias RF signals with different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. Furthermore, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0044] Additionally, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first bias DC signal is applied to at least one lower electrode. In another embodiment, the second DC generating unit 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0045] In various embodiments, at least one of the first DC signal and the second DC signal can be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses can have rectangular, trapezoidal, triangular, or combinations thereof pulse waveforms. In one embodiment, a waveform generation unit for generating a voltage pulse sequence from the DC signal is connected between the first DC generation unit 32a and at least one lower electrode. Therefore, the first DC generation unit 32a and the waveform generation unit constitute a voltage pulse generation unit. When the second DC generation unit 32b and the waveform generation unit constitute a voltage pulse generation unit, the voltage pulse generation unit is connected to at least one upper electrode. The voltage pulses can have positive or negative polarity. Furthermore, the voltage pulse sequence can include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the first and second DC generation units 32a and 32b can be provided outside the RF power supply 31, or the first DC generation unit 32a can be provided instead of the second RF generation unit 31b.

[0046] The exhaust system 40 can be connected to a gas outlet 10e, for example, located at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve can be used to regulate the pressure within the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0047] The plasma processing apparatus 1 configured as described above is controlled as a whole by a control unit 100. The control unit 100, for example, is a computer, which controls the various parts of the plasma processing apparatus 1. The plasma processing apparatus 1 is controlled as a whole by the control unit 100. The control unit 100 controls the plasma processing apparatus 1 to perform the various steps described in this invention.

[0048] [Structure of the Control Department]

[0049] Next, the control unit 100 will be explained. Figure 4This is a block diagram showing the schematic structure of the control unit 100 in the embodiment. The control unit 100 includes an external interface 101, a user interface 102, a storage unit 103, and a processing controller 104.

[0050] The external interface 101 can communicate with various parts of the plasma processing apparatus 1 and input and output various data. The user interface 102 includes a keyboard for process managers to input commands for managing the plasma processing apparatus 1, a display for visually displaying the operating status of the plasma processing apparatus 1, etc.

[0051] The storage unit 103 stores control programs (software) and various programs for implementing various processes performed by the plasma processing apparatus 1 under the control of the processing controller 104. Furthermore, the storage unit 103 stores various data used in the programs executed by the processing controller 104. For example, the storage unit 103 stores recipes containing processing condition data and predictive model data 110. Additionally, the programs and data can also be used in a state stored on a computer-readable computer recording medium (e.g., hard disk, DVD, floppy disk, semiconductor memory, etc.). Furthermore, the programs and data can also be used online by real-time transmission from other devices, for example, via a dedicated line.

[0052] Prediction model data 110 stores prediction model data. This prediction model is used to predict the temperature of the substrate W based on the heat output of the heater HT, the temperature of the main body 111, the temperature of the refrigerant, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the refrigerant. In this embodiment, the prediction model is a calculation formula used to predict the temperature of the substrate W in each region A based on the heat output of the heater HT in each region A, the temperature of the main body 111, the temperature of the refrigerant, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the refrigerant. Details of the prediction model will be explained later.

[0053] The processing controller 104 includes processors such as a CPU (Central Processing Unit) and an MPU (Micro Processing Unit) to control various parts of the plasma processing apparatus 1. The processing controller 104 has an internal memory for storing programs and data, reads the control program stored in the storage unit 103, and executes the processing of the read control program. By running the control program, the processing controller 104 functions as various processing units. For example, the processing controller 104 has the functions of a plasma control unit 120, an acquisition unit 121, a correction unit 122, a prediction unit 123, and a heat control unit 124. In this embodiment, the example of the processing controller 104 having the functions of a plasma control unit 120, an acquisition unit 121, a correction unit 122, a prediction unit 123, and a heat control unit 124 will be described. However, the functions of the plasma control unit 120, the acquisition unit 121, the correction unit 122, the prediction unit 123, and the heat control unit 124 can also be implemented by multiple controllers distributed across the process.

[0054] The plasma control unit 120 controls each part of the plasma processing device 1, thereby controlling the plasma processing.

[0055] The acquisition unit 121 periodically acquires the heat output of each heater HT, the temperature of the main body 111, and the temperature of the refrigerant. In this embodiment, the acquisition unit 121 periodically acquires the temperature of the refrigerant, as well as the heat output of the heater HT in each region A and the temperature of the main body 111.

[0056] Details of the correction unit 122 and the prediction unit 123 will be explained later.

[0057] The heating control unit 124 controls the heater power supply 60 via the external interface 101 to control the heat output of each heater HT. For example, the heating control unit 124 outputs control data specifying the power supplied to each heater HT to the heater power supply 60 to control the heat output of each heater HT. In this embodiment, the heating control unit 124 outputs control data specifying the duty cycle of each heater HT to the heater power supply 60. Based on the control data, the heater power supply 60 supplies power to each heater HT at a specified duty cycle. The heater HT generates heat with a heat output corresponding to the supplied power. For example, if the heater power supply 60 can supply 100W of power per unit time to a heater HT and the duty cycle is specified as 20%, the heater power supply 60 controls the duty cycle of the power supplied to that heater HT to be 20%, supplying 20W of power per unit time to that heater HT. In this case, the heater HT generates heat with a heat output of 20W per unit time.

[0058] Next, the plasma processing procedure will be briefly explained.

[0059] The substrate W is fed into the plasma processing chamber 10 by a conveying mechanism such as a conveying arm via an inlet / outlet (not shown) and placed on the central region 111a of the substrate support 11.

[0060] The plasma control unit 120 controls the plasma processing. For example, the plasma control unit 120 controls the exhaust system 40 to exhaust the plasma processing chamber 10 to a specified vacuum level. The plasma control unit 120 controls the gas supply unit 20 to introduce processing gas from the gas supply unit 20 into the plasma processing space 10s. The plasma control unit 120 controls the power supply 30 to supply generation source RF signals and bias RF signals from the first RF generation unit 31a and the second RF generation unit 31b in coordination with the introduction of processing gas, so as to generate plasma in the plasma processing chamber 10.

[0061] However, in plasma processing, the temperature of the substrate W affects the processing. For example, in plasma etching, the etching rate varies depending on the temperature of the substrate W. Therefore, in the plasma processing apparatus 1, the following structure can be considered: the temperature of the main body 111 is detected by a temperature sensor TS, and feedback control is performed by heating with a heater HT and cooling with a refrigerant to bring the main body 111 to a predetermined temperature, thereby controlling the temperature of the substrate W.

[0062] However, heat is sometimes input to the substrate W from heat sources present within the plasma processing chamber 10. A heat source is a supply source that provides heat to the substrate W. Components and spaces within the plasma processing chamber 10 whose temperature is higher than that of the substrate W become heat sources. Heat sources are present within the plasma processing chamber 10. For example, in plasma processing, the plasma generated within the plasma processing chamber 10 becomes a heat source. During plasma processing, heat from the plasma is input to the substrate W. Furthermore, components within the plasma processing chamber 10, after being heated by the plasma, become heat sources when their temperature exceeds that of the substrate W. Radiation from the heated components within the plasma processing chamber 10 also inputs heat to the substrate W. Thus, the plasma processing apparatus 1 experiences heat input to the substrate W from heat sources such as the plasma and heated components within the plasma processing chamber 10, sometimes making it impossible to control the temperature of the substrate W with high precision.

[0063] Therefore, the plasma processing apparatus 1 of this embodiment controls the temperature of the substrate W as follows.

[0064] The acquisition unit 121 periodically acquires the heat output of each heater HT, the temperature of the main body 111, and the temperature of the refrigerant. In this embodiment, the acquisition unit 121 periodically acquires the temperature of the refrigerant, as well as the heat output of the heater HT in each region A and the temperature of the main body 111.

[0065] For example, the acquisition unit 121 acquires the temperature of each temperature sensor TS disposed in each region A from the temperature detection unit 61 via the external interface 101, and uses this temperature as the temperature of the main body 111 of each region A. Furthermore, the acquisition unit 121 acquires the temperature of the refrigerant from the cooler unit 14 via the external interface 101. Alternatively, the temperature of the refrigerant can also be acquired from a thermometer installed on the piping 14a.

[0066] Furthermore, the acquisition unit 121 acquires the heat output of the heater HT in each region A from the heating control unit 124. For example, the acquisition unit 121 acquires the electrical power supplied to the heater HT in each region A, controlled by the heating control unit 124. The acquisition unit 121 determines the acquired electrical power supplied to the heater HT in each region A as the heat output of the heater HT in each region A. In this embodiment, the acquisition unit 121 acquires the duty cycle of the heater HT in each region A, controlled by the heating control unit 124. The acquisition unit 121 determines the electrical power supplied to the heater HT in each region A based on the duty cycle of the heater HT in each region A and the electrical power that the heater power supply 60 can supply to the heater HT in each region A. For example, when the duty cycle is 20% and the heater power supply 60 can supply 100W of electrical power to the heater HT in region A per unit time, the acquisition unit 121 determines the electrical power supplied to the heater HT as 20W per unit time. The acquisition unit 121 determines the heat output of the heater HT as 20W per unit time.

[0067] The correction unit 122 corrects the temperature of the refrigerant obtained by the acquisition unit 121 to the temperature of the refrigerant at each region A along the flow path 1110a.

[0068] The prediction unit 123 uses a prediction model to predict the temperature of substrate W in each region A to predict the temperature of substrate W.

[0069] Here, the prediction model is explained. The prediction model can be expressed as a mathematical model in which the temperature of the substrate W in each region A is calculated by multiplying the heat output of the heater HT in region A and all other regions A, the temperature of the main body 111, the temperature of the refrigerant, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the refrigerant by coefficients and then summing them. For example, the prediction model can be expressed as a calculation formula as shown in the following equation (1) by using the thermal network method or a polynomial approximation model.

[0070]

[0071] in,

[0072] n is the number assigned sequentially to each region A.

[0073] T1~T n It is the temperature of substrate W in region A, numbered 1 to n.

[0074] p1~p n It is the heat output of heater HT in region A, numbered 1 to n.

[0075] T'1~T' n It is the temperature of the main body 111 of region A, numbered 1 to n.

[0076] T”1~T” n It is the temperature of the refrigerant in region A, numbered 1 to n.

[0077] a 1,1 ~a n,n It is related to the heat output p1~p of the heater HT n The corresponding coefficient.

[0078] b 1,1 ~b n,n It is related to the temperature T'1~T' of the main body 111. n The corresponding coefficient.

[0079] c 1,1 ~c n,n It is related to the temperature T'1~T' of the main body 111. n The coefficients corresponding to the time differential components.

[0080] d 1,1 ~d n,n It is related to the temperature of the refrigerant, T1~T1. n The corresponding coefficient.

[0081] e 1,1 ~e n,n It is related to the temperature of the refrigerant, T1~T1. n The coefficients corresponding to the time differential components.

[0082] The heat flow in the parts involving the substrate W and the main body 111 can be represented as a thermal loop using the thermal network method. Figure 5 This is a diagram showing an example of the thermal circuit of the substrate W and the main body 111 in an embodiment.

[0083] exist Figure 5In the illustrated thermal circuit, the substrate W of regions A numbered 1 to n is designated as nodes #1 to #n, the main body 111 of regions A numbered 1 to n is designated as nodes #n+1 to #2n, and the refrigerant within flow path 1110a is designated as nodes #2n+1 to #3n. The refrigerant flows within flow path 1110a. The heat transferred to the refrigerant flows away with the refrigerant. Therefore, nodes #2n+1 to #3n are represented by a grounding symbol as constant potential points.

[0084] In each region A, heat transfer occurs between the substrate W and the main body 111, and between the main body 111 and the refrigerant within the flow path 1110a, based on temperature differences. Figure 5 In the thermal circuit shown, the thermal resistance between the substrate W and the main body 111 is represented as thermal resistance R1, and the thermal resistance between the main body 111 and the refrigerant in the flow path 1110a is represented as thermal resistance R2.

[0085] Furthermore, in the plasma processing apparatus 1, heat is transferred between regions A based on the temperature difference between the substrate W and the main body 111. Figure 5 In the thermal circuit shown, the thermal resistance between regions A of the substrate W is represented as thermal resistance R3, and the thermal resistance between regions A of the main body 111 is represented as thermal resistance R4.

[0086] Furthermore, in each region A of the plasma processing apparatus 1, a heater HT is provided in the main body 111, and the heat generated by the heater HT is transferred to the main body 111. Figure 5 In the thermal circuit shown, a variable heat source P1, representing the heater HT, is connected to nodes #n+1 to #2n, which represent the main body 111.

[0087] Furthermore, in each region A, the plasma processing apparatus 1 inputs heat to the substrate W from heat sources such as plasma or heated components within the plasma processing chamber 10. Figure 5 In the heat loop shown, the heat source for each region A numbered 1 to n is represented as a variable heat source P2. Additionally, Figure 5 The illustrated heat loop shows a state where no heat is input from the variable heat source P2 to each region A, i.e., a state where the variable heat source P2 of each region A is separated from nodes #1 to #n on the loop. When considering the input of heat from the variable heat source P2 to each region A, the state is one where the variable heat source P2 of each region A is connected to nodes #1 to #n on the loop.

[0088] For nodes #1 to #3n, the simultaneous equations of heat balance can be expressed as shown in equations (2-1) to (2-3n).

[0089]

[0090] in,

[0091] Q is the input heat (W) of each node. For example, Q1 is the input heat of node #1.

[0092] G is the thermal conductivity (W / K) between nodes. For example, G 1,i It is the thermal conductivity of node #1 and node #i.

[0093] T represents the temperature (degC) of each node. For example, T1 is the temperature of node #1.

[0094] t is time (sec).

[0095] C represents the heat capacity of each node. For example, C1 is the heat capacity of node #1.

[0096] On the left side of the simultaneous equations for the heat budget, for each node, let i range from 1 to 3n, multiply the temperature difference between i and nodes #1 to #3n by the thermal conductivity G, and sum them up. Add the input heat Q to the sum. For example, on the left side of equation (2-1), for node #1, let i range from 1 to 3n, and multiply the temperature difference between i and nodes #1 to #3n by the thermal conductivity G. i - T1) multiplied by thermal conductivity G 1,i Add the input heat Q1 to the sum.

[0097] Furthermore, equations (2-1) to (2-3n) are expressed using terms that include heat transfer terms between all nodes #1 to #3n. For the nodes where heat transfer is not considered, the thermal conductivity G between the nodes is, for example, set to zero. For example, for... Figure 5 The thermal loop shown has no connected nodes, and the thermal conductivity G between the nodes is set to zero, for example.

[0098] For example, Figure 5 The simultaneous equations for the heat balance of node #1 shown can be expressed as equation (3) below.

[0099]

[0100] Equation (1) above can be obtained from the simultaneous equations of the heat budget at nodes #1 to #3n. Alternatively, equation (1) can also be obtained using a polynomial approximation model.

[0101] The coefficient a in equation (1) 1,1 ~a n,n b 1,1 ~b n,n c 1,1 ~c n,n d 1,1 ~d n,n e 1,1 ~en,n The values ​​can be determined by fitting the data. The data is generated by using the plasma processing device 1 to obtain the relationship between the substrate W temperature of each region A, the heat output of the heater HT, the temperature of the main body 111, the temperature of the refrigerant, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the refrigerant.

[0102] For example, when generating fitting data, the substrate W is placed in the central region 111a of the substrate support 11. During the generation of fitting data, the processing controller 104, without generating plasma, cools the substrate by circulating the refrigerant from the cooler unit 14 through the flow path 1110a, while controlling the heater power supply 60 to heat each heater HT. The processing controller 104 measures the temperature of the substrate W in each region A, the heat output of the heater HT, the temperature of the main body 111, and the temperature of the refrigerant. The temperature of the substrate W in each region A is measured, for example, by a temperature sensor such as an infrared camera disposed within the plasma processing chamber 10. Alternatively, the temperature of the substrate W in each region A can be measured, for example, using a sensor substrate configured to measure temperature. The processing controller 104 periodically measures the temperature of the substrate W in each region A, the heat output of the heater HT, the temperature of the main body 111, and the temperature of the refrigerant, for various different modes of changing the temperature of the refrigerant and the heat output of each heater HT, including the transition period of temperature changes. The processing controller 104 generates and stores fitting data that includes the measured time, the temperature of the substrate W in each region A, the heat output of the heater HT, the temperature of the main body 111, and the temperature of the refrigerant.

[0103] The temperature of the refrigerant in each zone A can be the temperature of the refrigerant measured in cooler unit 14.

[0104] Here, the temperature of the refrigerant flowing in flow path 1110a gradually increases due to the heat input from the base 1110. Therefore, the temperature of the refrigerant in each region A in the fitting data can be corrected accordingly to the temperature rise along flow path 1110a. For example, the amount of temperature rise of the refrigerant as it passes through flow path 1110a is determined. Furthermore, the total length from one end of the flow path 1110a where the refrigerant flows in to the other end where it flows out is determined. Additionally, the length of flow path 1110a to each region A is determined. The length of flow path 1110a to each region A is measured from one end along flow path 1110a. The total length of flow path 1110a and the length of flow path 1110a to each region A can be determined based on the design data of base 1110, or by actual measurement of base 1110. In the refrigerant temperature correction, for each region A, the refrigerant temperature rise along the entire length of flow path 1110a is multiplied by the ratio of the length of flow path 1110a in region A to the total length of flow path 1110a to calculate the refrigerant temperature rise in each region A. Then, in the refrigerant temperature correction, for each region A, the refrigerant temperature is calculated by adding the refrigerant temperature measured by a thermometer installed in cooler unit 14 or piping 14a to the calculated refrigerant temperature rise in each region A. Alternatively, the refrigerant temperature rise in each region A can also be obtained through simulation or similar methods.

[0105] By fitting the data to equation (1) using such a fitting method, the coefficients a can be determined separately. 1,1 ~a n,n b 1,1 ~b n,n c 1,1 ~c n,n d 1,1 ~d n,n e 1,1 ~e n,n The appropriate value.

[0106] Predictive model data 110 stores coefficients a 1,1 ~a n,n b 1,1 ~b n,n c 1,1 ~c n,n d 1,1 ~d n,n e 1,1 ~e n,n Formula (1) is set to a specific value.

[0107] The acquisition unit 121 periodically acquires the heat output of each heater HT, the temperature of the main body 111, and the temperature of the refrigerant. In this embodiment, the acquisition unit 121 periodically acquires the temperature of the refrigerant, the heat output of the heater HT in each region A, and the temperature of the main body 111. The period for the acquisition unit 121 to acquire the temperature of the refrigerant, the heat output of the heater HT, and the temperature of the main body 111 is only required to be the period for calculating the time derivative of the temperature of the main body 111 and the time derivative of the temperature of the refrigerant. For example, the period is preferably 0.01 to 0.1 seconds, and more preferably 0.0001 to 0.01 seconds.

[0108] The correction unit 122 corrects the refrigerant temperature obtained by the acquisition unit 121 to the refrigerant temperature at each region A, corresponding to the temperature rise along the flow path 1110a. For example, for each region A, the correction unit 122 calculates the refrigerant temperature rise by multiplying the refrigerant temperature rise along the entire length of the flow path 1110a by the ratio of the length of the flow path 1110a in region A to the total length of the flow path 1110a. Then, for each region A, the correction unit 122 calculates the refrigerant temperature in each region A by adding the refrigerant temperature measured by the thermometer installed in the cooler unit 14 or the piping 14a to the calculated refrigerant temperature rise in each region A. Alternatively, the correction unit 122 may calculate the refrigerant temperature in each region A by adding the refrigerant temperature measured by the thermometer installed in the cooler unit 14 or the piping 14a to the refrigerant temperature rise in each region A obtained through simulation or the like.

[0109] The prediction unit 123 uses the prediction model stored in the prediction model data 110 to predict the temperature of the substrate W in each region A. Based on the corrected refrigerant temperature in each region A, the obtained heat output of the heater HT in each region A, the temperature of the main body 111, the time derivative of the temperature of the main body 111, and the time derivative of the refrigerant temperature, the prediction unit 123 uses equation (1) to predict the temperature of the substrate W in each region A. For example, the prediction unit 123 substitutes the refrigerant temperature in each region A, the heat output of the heater HT, the temperature of the main body 111, the time derivative of the temperature of the main body 111, and the time derivative of the refrigerant temperature into equation (1) to calculate the temperature of the substrate W in each region A. By using equation (1), the prediction unit 123 can predict the temperature of the substrate W with high accuracy.

[0110] The heat control unit 124 controls the heat output of the heater HT to ensure that the temperature of the substrate W predicted by the prediction unit 123 reaches a predetermined temperature. The heat control unit 124 sets a set temperature for the substrate W. For example, during plasma processing, the heat control unit 124 sets the set temperature of the substrate W stored in the formula for each region A of the substrate W. For each region A, the heat control unit 124 controls the heat output of the heater HT to ensure that the temperature of the substrate W reaches the set temperature. For example, the heat control unit 124 controls the heater power supply 60 to increase the heat output of the heater HT in regions A where the predicted substrate W temperature is lower than the set temperature, and to decrease the heat output of the heater HT in regions A where the predicted substrate W temperature is higher than the set temperature. For example, the heating control unit 124 outputs control data to the heater power supply 60. This control data is used to increase the duty cycle of the region A where the predicted substrate W temperature is lower than the set temperature, and to decrease the duty cycle of the region A where the predicted substrate W temperature is higher than the set temperature.

[0111] [Specific example of the substrate temperature control process]

[0112] Next, a specific example of the substrate temperature control process, including the substrate temperature control method, will be described. Figure 6 This is a flowchart illustrating an example of the substrate temperature control process in an embodiment. The substrate temperature control process in this embodiment is performed at the start of plasma processing. At the start of plasma processing, the heating control unit 124 sets the set temperature of the substrate W stored in the formula for each region A of the substrate W.

[0113] The acquisition unit 121 acquires the heat output of the heater HT, the temperature of the main body 111, and the temperature of the refrigerant (step S10). For example, the acquisition unit 121 acquires the temperature of the refrigerant, as well as the heat output of the heater HT in each region A and the temperature of the main body 111.

[0114] The correction unit 122 corrects the temperature of the refrigerant obtained by the acquisition unit 121 to the temperature of the refrigerant in each region A (step S11).

[0115] The prediction unit 123 uses the prediction model stored in the prediction model data 110 to predict the temperature of the substrate W in each region A (step S12). For example, the prediction unit 123 uses formula (1) to predict the temperature of the substrate W in each region A based on the corrected temperature of the refrigerant in each region A, the heat output of the heater HT in each region A, the temperature of the main body 111, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the refrigerant.

[0116] The heating control unit 124 controls the heat output of the heater HT for each region A so that the temperature of the substrate W predicted by the prediction unit 123 becomes the set temperature (step S13).

[0117] The heating control unit 124 determines whether a temperature control stop signal indicating the end of temperature control has been received (step S14). If no temperature control stop signal is received (step S14: No), the process returns to step S10. If a temperature control stop signal is received (step S14: Yes), the process ends. The substrate temperature control process continues even after the plasma treatment is completed until a temperature control stop signal is received.

[0118] Therefore, the plasma processing apparatus 1 of the embodiment can control the temperature of each region A of the substrate W to a set temperature with high precision.

[0119] Furthermore, in the above embodiment, the example described is a prediction model that includes heat transfer terms from each region A and all other regions A. However, it is not limited to this. For example, the prediction model could also be a prediction model that includes heat transfer terms from each region A and other parts of region A. The other parts of region A can be any region A that generates heat transfer to region A; it could be a region A surrounding region A or a region A adjacent to region A.

[0120] Furthermore, in the above embodiment, the temperature of the substrate W was predicted by dividing the central region 111a of the main body 111 into various regions A, and the heat output of the heater HT was controlled in each region A to make the temperature of the substrate W reach a set temperature. However, this is not a limitation. For example, the central region 111a of the main body 111 may not be divided into regions A, but the central region 111a may be treated as a single region A to predict the temperature of the substrate W, and the heat output of the heater HT may be controlled to make the temperature of the substrate W reach a set temperature.

[0121] Furthermore, in the above embodiment, a thermal circuit representing the substrate W and the main body 111 is shown. Figure 5 The thermal circuit of the substrate W and the main body 111 can be represented by adding nodes to account for the heat transfer between the temperature sensor TS and the heater HT within the main body 111. For example, the thermal circuit of the substrate W and the main body 111 can also be represented by... Figure 5 Add nodes between nodes #1~#n and nodes #n+1~#2n of the thermal loop structure, and connect the variable heat source P1, which represents the heater HT, to the loop structure of the added nodes.

[0122] Furthermore, in the above embodiment, the example described is that the prediction model (Equation (1)) obtained from the fitting data generated by the plasma processing device 1 is stored in the prediction model data 110. However, this is not the only limitation. The prediction model in the prediction model data 110 may also store prediction models obtained by other plasma processing devices. For example, in the case of operating multiple plasma processing devices, the coefficient a can be determined in any one of the plasma processing devices. 1,1 ~a n,n b 1,1 ~b n,n c 1,1 ~c n,n d 1,1 ~d n,n e 1,1 ~e n,n Equation (1) is obtained and applied to multiple plasma processing devices. Alternatively, the prediction model in the prediction model data 110 can be provided by the manufacturer of the plasma processing device. The prediction model can be adjusted to accommodate individual differences in each plasma processing device. For example, a correction term can be added to Equation (1) to absorb individual differences in the plasma processing devices. Each plasma processing device 1 can also use a prediction model with the correction term adjusted according to the individual differences of each plasma processing device 1. For example, for a standard plasma processing device, Equation (1) is obtained as a standard. Each plasma processing device 1 stores the modified Equation (1) as a prediction model in the prediction model data 110.

[0123] Furthermore, the above embodiment was described using plasma processing of a semiconductor wafer serving as substrate W as an example, but it is not limited to this. Substrate W can be any substrate.

[0124] Furthermore, in the above embodiments, the case of a plasma processing system performing plasma etching processing as the substrate processing apparatus was described as an example. However, it is not limited to this. Regarding the substrate processing apparatus, any apparatus that provides a heat source to input heat to the substrate W can be used; it can be any apparatus. For example, the substrate processing apparatus could also be a film-forming apparatus that generates plasma to form a film. Alternatively, the substrate processing apparatus could also be a heat treatment apparatus that performs heat treatments such as ashing on the substrate W using a heat source such as a light source or a heater.

[0125] As described above, the plasma processing system (substrate processing apparatus) of the embodiment includes a main body 111 (stage), a plasma processing chamber 10 (chamber), a cooling mechanism (coolant, flow path 1110a, etc.), a heater HT (heating mechanism), a temperature sensor TS (measuring unit), an acquisition unit 121, a prediction unit 123, and a heat control unit 124. The main body 111 can hold a substrate W. The plasma processing chamber 10 has the main body 111 inside, and a heat source that inputs heat to the substrate W placed on the main body 111 occurs. The cooling mechanism is provided in the main body 111 to cool the main body 111. The heater HT is provided between the central region 111a (placement surface) of the substrate W placed on the main body 111 and the cooling mechanism, and can control the heat generation to heat the main body 111. The temperature sensor TS measures the temperature of the main body 111. The acquisition unit 121 periodically acquires the heat generation of the heater HT, the temperature of the main body 111, and the temperature of the cooling mechanism. The prediction unit 123 uses a calculation formula (e.g., formula (1)) to predict the temperature of the substrate W based on the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism. It also predicts the temperature of the substrate W based on the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, and the time derivatives of the temperature of the main body 111 and the cooling mechanism, as well as the time derivatives of the temperature of the main body 111 and the temperature of the cooling mechanism, all acquired by the acquisition unit 121. The heat control unit 124 controls the heat output of the heater HT so that the temperature of the substrate W predicted by the prediction unit 123 becomes a predetermined temperature. Therefore, the plasma processing system of this embodiment can control the temperature of the substrate W with high precision.

[0126] Furthermore, the calculation formula is a predictive model that calculates the temperature of the substrate W by multiplying the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them. Therefore, the plasma processing system of this embodiment can use this predictive model to predict the temperature of the substrate W, thereby enabling high-precision control of the temperature of the substrate W.

[0127] Furthermore, the calculation formula is a mathematical model that calculates the temperature of the substrate W by multiplying the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them. The values ​​of each coefficient in the mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate W, the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W using a mathematical model, and thus can control the temperature of the substrate W with high precision.

[0128] Furthermore, the values ​​of the coefficients in the mathematical model are determined by fitting data. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W using the mathematical model, thus enabling high-precision control of the substrate W's temperature.

[0129] Furthermore, the central region 111a of the substrate W mounted on the main body 111 is divided into multiple regions A. Cooling mechanisms are provided in all regions A of the main body 111. Heaters HT are provided in each region A of the main body 111. Temperature sensors TS are provided in each region A of the main body 111 to measure the temperature of the main body 111 in each region A. The acquisition unit 121 periodically acquires the temperature of the cooling mechanisms, the heat output of the heaters HT in each region A, and the temperature of the main body 111. The prediction unit 123 uses a calculation formula to predict the temperature of the substrate W in each region A based on the temperature of the cooling mechanisms acquired by the acquisition unit 121, the heat output of the heaters HT in each region A, the temperature of the main body 111, the time derivative of the temperature of the main body 111 in each region A, and the time derivative of the temperature of the cooling mechanisms. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W in each region A, and thus can control the temperature of the substrate W in each region A with high precision.

[0130] Furthermore, the calculation formula is a mathematical model that calculates the temperature of the substrate W in each region A by multiplying the heat output of the heater HT in region A and other regions A, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them. The values ​​of the coefficients in the mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate W in each region A, the heat output of the heater HT, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism. Therefore, the plasma processing system of this embodiment can use the mathematical model to predict the temperature of the substrate W in each region A, taking into account the heat transfer with other regions A, and thus can control the temperature of the substrate W in each region A with high precision.

[0131] Furthermore, the values ​​of the coefficients in the mathematical model are determined by fitting data. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W in each region A using the mathematical model, thus enabling high-precision control of the temperature of the substrate W in each region A.

[0132] Furthermore, the calculation formula is a mathematical model that, for each region A, calculates the temperature of the substrate W in each region A by multiplying the heat output of the heater HT in region A and all other regions A, the temperature of the main body 111, the temperature of the cooling mechanism, the time derivative of the temperature of the main body 111, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them. Therefore, the plasma processing system of this embodiment can use a mathematical model to predict the temperature of the substrate W in each region A, taking into account heat transfer with all other regions A, and thus can control the temperature of the substrate W in each region A with high precision.

[0133] Furthermore, the cooling mechanism is a flow path 1110a for refrigerant flow, formed in a manner that passes through all regions A of the main body 111. The correction unit 122 acquires the temperature of the refrigerant flowing into the flow path 1110a. Additionally, the plasma processing system of this embodiment also includes a correction unit 122. The correction unit 122 corrects the temperature of the refrigerant acquired by the acquisition unit 121 to the temperature of the refrigerant at each region A along the flow path 1110a. The prediction unit 123 uses a calculation formula to predict the temperature of the substrate W in each region A, based on the temperature of the refrigerant in each region A corrected by the correction unit 122, the heat output of the heater HT in each region A acquired by the acquisition unit 121, the temperature of the main body 111, and the time derivatives of the temperature of the cooling mechanism in each region A and the temperature of the main body 111. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W in each region A using the temperature of the refrigerant at each region A, thus enabling high-precision control of the temperature of each region A.

[0134] The prediction unit 123 predicts the temperature of the substrate W when a heat source is present. The heat source is any of plasma or any of the components heated within the plasma processing chamber 10. Therefore, the plasma processing system of this embodiment can predict the temperature of the substrate W when heat input from the heat source is present, and thus can control the temperature of the substrate W when heat input from the heat source is present with high precision.

[0135] Furthermore, the embodiments disclosed herein are illustrative in all respects and should not be considered limiting. In fact, the above embodiments can be implemented in various ways. In addition, the above embodiments can be omitted, substituted, or modified in various ways without departing from the scope and spirit of the claims.

[0136] In addition, the following notes are further disclosed regarding the above-described embodiments.

[0137] (Note 1)

[0138] A substrate processing apparatus comprising:

[0139] A mounting stage capable of holding a substrate;

[0140] A chamber, in which the aforementioned mounting stage is disposed, and a heat source that inputs heat to the substrate placed on the aforementioned mounting stage will appear in the aforementioned chamber;

[0141] A cooling mechanism is provided on the aforementioned platform to cool the aforementioned platform;

[0142] The heating mechanism for heating the aforementioned mounting stage is disposed between the mounting surface of the aforementioned mounting stage on which the aforementioned substrate is mounted and the aforementioned cooling mechanism, and is configured to control the amount of heat generated.

[0143] The measuring unit measures the temperature of the aforementioned mounting platform;

[0144] The acquisition unit periodically acquires the heat generated by the heating mechanism, the temperature of the mounting platform, and the temperature of the cooling mechanism.

[0145] The prediction unit uses a calculation formula to predict the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism. It also predicts the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, and the time derivatives of the temperature of the mounting stage and the temperature of the cooling mechanism, all obtained by the acquisition unit.

[0146] The heating control unit controls the heat generated by the heating mechanism so that the temperature of the substrate predicted by the prediction unit becomes a predetermined temperature.

[0147] (Note 2)

[0148] As described in Appendix 1, the substrate processing apparatus, wherein,

[0149] The above calculation formula is a prediction model that predicts the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism.

[0150] (Note 3)

[0151] As described in Appendix 1 or 2, the substrate processing apparatus, wherein,

[0152] The above calculation formula is a mathematical model that calculates the temperature of the substrate by multiplying the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them.

[0153] The values ​​of the coefficients in the above mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate, the heat output of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism.

[0154] (Note 4)

[0155] As described in Appendix 3, the substrate processing apparatus, wherein...

[0156] The values ​​of the coefficients in the above mathematical model were determined by fitting the data described above.

[0157] (Note 5)

[0158] As described in Appendix 1, the substrate processing apparatus, wherein,

[0159] The aforementioned mounting surface of the mounting platform is divided into multiple regions.

[0160] The aforementioned cooling mechanisms are installed in all areas of the aforementioned mounting platform.

[0161] The aforementioned heating mechanisms are installed in each of the aforementioned areas of the aforementioned platform.

[0162] The aforementioned measuring unit is installed in each of the aforementioned areas of the aforementioned mounting platform, and measures the temperature of the aforementioned mounting platform in each of the aforementioned areas.

[0163] The aforementioned acquisition unit periodically acquires the temperature of the aforementioned cooling mechanism, the heat output of the aforementioned heating mechanism in each region, and the temperature of the aforementioned mounting platform.

[0164] The prediction unit uses the above-mentioned calculation formula to predict the temperature of the substrate in each region based on the temperature of the cooling mechanism obtained by the acquisition unit, the heat output of the heating mechanism in each region, the temperature of the mounting stage, the time derivative of the temperature of the mounting stage in each region, and the time derivative of the temperature of the cooling mechanism.

[0165] (Note 6)

[0166] As described in Appendix 3, the substrate processing apparatus, wherein...

[0167] The above calculation formula is a mathematical model that calculates the temperature of the substrate in each region by multiplying the heat output of the heating mechanism in that region and the other regions, the temperature of the mounting platform, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting platform, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them.

[0168] The values ​​of the coefficients in the above mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate in each region, the heat output of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism.

[0169] (Note 7)

[0170] As described in Appendix 6, the substrate processing apparatus, wherein...

[0171] The values ​​of the coefficients in the above mathematical model were determined by fitting the data described above.

[0172] (Note 8)

[0173] As described in Appendix 6 or 7, the substrate processing apparatus, wherein...

[0174] The above calculation formula is a mathematical model that calculates the temperature of the substrate in each region by multiplying the heat output of the heating mechanism in that region and all other regions, the temperature of the mounting platform, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting platform, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them.

[0175] (Note 9)

[0176] As described in any of Appendix 5 to 8, the substrate processing apparatus, wherein,

[0177] The aforementioned cooling mechanism is a flow path for refrigerant to flow, formed by passing through all areas of the aforementioned mounting platform.

[0178] The aforementioned acquisition section acquires the temperature of the refrigerant flowing into the aforementioned flow path.

[0179] (Postscript 10)

[0180] As described in Appendix 9, the substrate processing apparatus, wherein...

[0181] It also includes a correction unit that corrects the refrigerant temperature obtained by the acquisition unit to the refrigerant temperature in each region along the flow path.

[0182] The prediction unit uses the above-mentioned calculation formula to predict the temperature of the substrate in each region based on the temperature of the refrigerant in each region after correction by the correction unit, the heat output of the heating mechanism in each region and the temperature of the mounting stage obtained by the acquisition unit, and the time derivative of the temperature of the cooling mechanism and the temperature of the mounting stage in each region.

[0183] (Postscript 11)

[0184] As described in any of Appendix 1 to 10, the substrate processing apparatus, wherein,

[0185] The aforementioned prediction unit predicts the temperature of the substrate under the condition of the aforementioned heat source.

[0186] (Postscript 12)

[0187] As described in any of Appendix 1 to 11, the substrate processing apparatus, wherein,

[0188] The heat source is at least one of plasma or the heated components within the cavity.

[0189] (Postscript 13)

[0190] A substrate temperature control method, wherein,

[0191] The above-mentioned substrate temperature control method is a substrate temperature control method for substrate processing devices.

[0192] The above-mentioned substrate processing apparatus has:

[0193] A mounting stage capable of holding a substrate;

[0194] The chamber contains the aforementioned mounting stage, and a heat source is present in the chamber to input heat to the substrate placed on the mounting stage.

[0195] A cooling mechanism is provided on the aforementioned platform to cool the aforementioned platform;

[0196] A heating mechanism for heating the aforementioned mounting stage is disposed between the mounting surface of the mounting stage on which the substrate is mounted and the aforementioned cooling mechanism, and is configured to control the amount of heat generated; and

[0197] The measuring unit measures the temperature of the aforementioned mounting platform.

[0198] The above-mentioned substrate temperature control methods include:

[0199] a) The step of periodically acquiring the heat generated by the heating mechanism, the temperature of the stage, and the temperature of the cooling mechanism;

[0200] b) A calculation formula for predicting the temperature of the substrate using the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism; and a step of predicting the temperature of the substrate based on the obtained heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, and the time derivatives of the temperature of the mounting stage and the temperature of the cooling mechanism; and

[0201] c) The step of controlling the heat output of the heating mechanism to make the predicted temperature of the substrate reach the specified temperature.

[0202] Explanation of reference numerals in the attached figures

[0203] 1. Plasma processing device

[0204] 10. Plasma processing chamber

[0205] 11. Substrate support

[0206] 14 Cooler Unit

[0207] 14a Piping

[0208] 60 Heater power supply

[0209] 61 Temperature Detection Department

[0210] 100 Control Department

[0211] 101 External Interface

[0212] 102 User Interface

[0213] 103 Storage Department

[0214] 104 Processing Controller

[0215] 110 Predictive Model Data

[0216] 111 Main Body

[0217] 111a Central Area

[0218] 111b Annular region

[0219] 112 Ring Components

[0220] 120 Plasma Control Department

[0221] 121 Acquisition Department

[0222] 122 Revision Department

[0223] 123 Forecasting Department

[0224] 124 Heating Control Department

[0225] 1110 Base

[0226] 1110a flow path

[0227] 1111 Electrostatic Chuck

[0228] 1111a Ceramic Components

[0229] 1111b Electrostatic electrode

[0230] Areas A, A1~A14

[0231] HT heater

[0232] TS temperature sensor

[0233] W substrate.

Claims

1. A substrate processing apparatus, characterized in that, have: A mounting stage capable of holding a substrate; A chamber, in which the stage is disposed, and a heat source is present in the chamber to input heat to the substrate placed on the stage; A cooling mechanism is provided on the mounting platform to cool the mounting platform; A heating mechanism for heating the mounting stage is disposed between the mounting surface of the mounting stage on which the substrate is mounted and the cooling mechanism, and is configured to control the amount of heat generated. The measuring unit measures the temperature of the mounting stage; The acquisition unit periodically acquires the heat generated by the heating mechanism, the temperature of the platform, and the temperature of the cooling mechanism; The prediction unit uses a formula to predict the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism. It also predicts the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, and the time derivatives of the temperature of the mounting stage and the temperature of the cooling mechanism, all acquired by the acquisition unit. A heat control unit controls the heat generated by the heating mechanism so that the temperature of the substrate predicted by the prediction unit becomes a predetermined temperature.

2. The substrate processing apparatus according to claim 1, characterized in that: The calculation formula is a prediction model that predicts the temperature of the substrate based on the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism.

3. The substrate processing apparatus according to claim 1, characterized in that: The calculation formula is a mathematical model that calculates the temperature of the substrate by multiplying the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them. The values ​​of the coefficients in the mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate, the heat output of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism.

4. The substrate processing apparatus according to claim 3, characterized in that: The values ​​of the coefficients in the mathematical model are determined by fitting the data.

5. The substrate processing apparatus according to claim 1, characterized in that: The mounting surface of the mounting platform is divided into multiple regions. The cooling mechanism is located in all areas of the mounting platform. The heating mechanism is disposed in each of the areas of the mounting platform. The measuring unit is disposed in each of the regions of the mounting platform, and measures the temperature of the mounting platform in each of the regions. The acquisition unit periodically acquires the temperature of the cooling mechanism, the heat output of the heating mechanism in each region, and the temperature of the mounting platform. The prediction unit uses the calculation formula to predict the temperature of the substrate in each region based on the temperature of the cooling mechanism obtained by the acquisition unit, the heat output of the heating mechanism in each region, the temperature of the mounting stage, the time derivative of the temperature of the mounting stage in each region, and the time derivative of the temperature of the cooling mechanism.

6. The substrate processing apparatus according to claim 5, characterized in that: The calculation formula is a mathematical model that calculates the substrate temperature for each region by multiplying the heat output of the heating mechanism, the temperature of the mounting platform, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting platform, and the time derivative of the temperature of the cooling mechanism in that region and other regions by coefficients and then summing them. The values ​​of the coefficients in the mathematical model are determined using data obtained by pre-calculating the relationship between the temperature of the substrate in each region, the heat output of the heating mechanism, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism.

7. The substrate processing apparatus according to claim 6, characterized in that: The values ​​of the coefficients in the mathematical model are determined by fitting the data.

8. The substrate processing apparatus according to claim 6, characterized in that: The calculation formula is a mathematical model that calculates the temperature of the substrate in each region by multiplying the heat output of the heating mechanism in that region and all other regions, the temperature of the stage, the temperature of the cooling mechanism, the time derivative of the temperature of the stage, and the time derivative of the temperature of the cooling mechanism by coefficients and then summing them.

9. The substrate processing apparatus according to claim 5, characterized in that: The cooling mechanism is a flow path for refrigerant to flow, formed in a manner that passes through all areas of the mounting platform. The acquisition unit acquires the temperature of the refrigerant flowing into the flow path.

10. The substrate processing apparatus according to claim 9, characterized in that: It also includes a correction unit that corrects the refrigerant temperature obtained by the acquisition unit to the refrigerant temperature at each region along the flow path. The prediction unit uses the calculation formula to predict the temperature of the substrate in each region based on the temperature of the refrigerant in each region after correction by the correction unit, the heat output of the heating mechanism in each region and the temperature of the mounting stage obtained by the acquisition unit, and the time derivatives of the temperature of the cooling mechanism and the temperature of the mounting stage in each region.

11. The substrate processing apparatus according to claim 1, characterized in that: The prediction unit predicts the temperature of the substrate when the heat source is present.

12. The substrate processing apparatus according to claim 1, characterized in that: The heat source is at least one of plasma or a heated component within the cavity.

13. A method for controlling substrate temperature, characterized in that: The substrate temperature control method is a substrate temperature control method for a substrate processing apparatus, wherein the substrate processing apparatus has: A mounting stage capable of holding a substrate; A chamber, in which the stage is disposed, and a heat source is present in the chamber to input heat to the substrate placed on the stage; A cooling mechanism is provided on the mounting platform to cool the mounting platform; A heating mechanism for heating the mounting stage is disposed between the mounting surface of the mounting stage on which the substrate is mounted and the cooling mechanism, and is configured to control the amount of heat generated. and The measuring unit measures the temperature of the mounting platform. The substrate temperature control method includes: a) The step of periodically acquiring the heat output of the heating mechanism, the temperature of the stage, and the temperature of the cooling mechanism; b) A calculation formula for predicting the temperature of the substrate using the heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, the time derivative of the temperature of the mounting stage, and the time derivative of the temperature of the cooling mechanism; and a step of predicting the temperature of the substrate based on the obtained heat output of the heating mechanism, the temperature of the mounting stage, the temperature of the cooling mechanism, and the time derivatives of the temperature of the mounting stage and the temperature of the cooling mechanism; and c) The step of controlling the heat output of the heating mechanism so that the predicted temperature of the substrate becomes a specified temperature.

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