A silicon carbide power module package with embedded double-sided heat dissipation

Abstract

The application relates to the technical field of silicon carbide power module packaging, and provides a silicon carbide power module packaging with embedded double-sided heat dissipation, which comprises a lower heat dissipation copper layer, a lower silicon nitride ceramic layer, a lower circuit copper layer, a plurality of silicon carbide power modules, an upper circuit copper layer, an upper silicon nitride ceramic layer and an upper heat dissipation copper layer; the silicon carbide power modules are electrically connected to the lower circuit copper layer, and the source electrodes are electrically connected to the upper circuit copper layer through a plurality of first lead-through columns; a slotted groove matched with the silicon carbide power modules is arranged on a metal layer; a plurality of heat dissipation pieces are arranged around the silicon carbide power modules in the slotted groove; the heat dissipation pieces comprise a trunk part close to the silicon carbide power modules, a branch part and a distal part; the trunk part is made of high-thermal-conductivity metal material, the branch part is made of high-thermal-conductivity insulating ceramic material and has a plurality of branch arms, and the distal part is filled with phase-change heat storage material. Fast transient heat absorption is realized, the junction temperature peak value during power mutation is significantly reduced, and the parasitic inductance is reduced.

Description

Technical Field

[0001] This invention relates to the field of silicon carbide power module packaging technology, and more specifically, to an embedded double-sided heat dissipation silicon carbide power module package. Background Technology

[0002] As power electronics evolve towards higher frequencies and higher power densities, silicon carbide (SiC) chips, while exhibiting outstanding performance, present significant challenges to packaging thermal management due to their extremely high heat flux density. Traditional packaging technologies often rely on ceramic substrates for steady-state heat dissipation. However, when faced with transient thermal shocks generated by electric vehicle acceleration or circuit surges, the long thermal resistance path and delayed thermal response often lead to instantaneous exceedances of the chip junction temperature, resulting in failure. Simultaneously, traditional wire bonding structures not only exhibit high parasitic inductance but also severely limit the heat dissipation capacity at the top of the chip. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide an embedded double-sided heat dissipation silicon carbide power module package to solve the above problems.

[0004] The present invention adopts the following solution:

[0005] This application provides an embedded double-sided heat-dissipating silicon carbide power module package, comprising, from bottom to top, a lower heat-dissipating copper layer, a lower silicon nitride ceramic layer, a lower circuit copper layer, multiple silicon carbide power modules, an upper circuit copper layer, an upper silicon nitride ceramic layer, and an upper heat-dissipating copper layer; wherein, the silicon carbide power modules are electrically connected to the lower circuit copper layer, and their sources are electrically connected to the upper circuit copper layer through multiple first conductive posts; a metal layer is also provided on the layer containing the silicon carbide power modules; the metal layer has slots adapted to the silicon carbide power modules; multiple heat dissipation components are disposed within the slots surrounding the silicon carbide power modules; each heat dissipation component includes a main body near the silicon carbide power modules, a branch portion connected to the main body, and a terminal portion connected to the branch portion; the main body is made of a high thermal conductivity metal material; the branch portion is made of a high thermal conductivity insulating ceramic material and has multiple support arms; the terminal portion is filled with a phase change heat storage material.

[0006] Furthermore, the main trunk is made of metallic copper; the branch sections are made of aluminum nitride ceramic; and the terminal section is filled with paraffin phase change material.

[0007] Furthermore, the multiple heat sinks are arranged to form a core heat dissipation frame; the three-level functional gradient thermal control network inside the core heat dissipation frame is approximately equivalent to a series thermal resistance model in the thermal conduction path, and its total thermal resistance satisfies the following relationship equation: ; in, This represents the total equivalent thermal resistance of the core heat dissipation frame. Indicates the equivalent heat transfer resistance of the main body; This represents the equivalent thermal resistance of the branch section. This represents the equivalent thermal resistance of the phase change thermal storage material at the terminal end. Indicates the equivalent calculated length of the main stem; Indicates the equivalent calculated length of the branch section; This indicates the equivalent calculated length of the phase change thermal storage material at the tip; Indicates the intrinsic thermal conductivity of the main body material; Indicates the intrinsic thermal conductivity of the material in the branch section; This indicates the equivalent overall thermal conductivity of the phase change thermal storage material at the terminal end before and after the solid-liquid phase change. This represents the equivalent heat dissipation cross-sectional area of ​​the main body; This represents the equivalent heat dissipation cross-sectional area of ​​the branch section; This represents the equivalent heat dissipation cross-sectional area of ​​the phase change thermal storage material at the tip. Wherein, the following conditions are met: .

[0008] Furthermore, the bottom substrate unit formed by the lower heat dissipation copper layer, the lower silicon nitride ceramic layer, and the lower circuit copper layer is geometrically mirror-symmetrical to the top substrate unit formed by the upper circuit copper layer, the upper silicon nitride ceramic layer, and the upper heat dissipation copper layer.

[0009] Furthermore, the first conductive post is a copper post.

[0010] Furthermore, the paraffin phase change material is a silica-coated microcapsule paraffin phase change material.

[0011] Furthermore, the outer metal layer is further provided with positive power terminals and negative power terminals formed by stacked insulating films to create a stacked low parasitic inductance.

[0012] Furthermore, the positive power terminal and the negative power terminal are disposed on opposite sides of the module package.

[0013] By adopting the above technical solution, the present invention can achieve the following technical effects: By setting up multiple heat dissipation components with graded heat dissipation gradients, efficient transient thermal management is achieved. When the system encounters a strong transient heat flow impact, the heat flow eliminates local heat accumulation through the main body made of high thermal conductivity metal material. The heat flow then enters the branch section made of horizontally diverging high thermal conductivity insulating ceramic material. Through the branch section, the heat flow decreases in a branch-like stepwise manner from the inside to the outside, and the intrinsic thermal conductivity of the material decreases stepwise. During the deep diffusion process, the heat flow is intercepted and spatially distributed by thermal resistance gradient, so that the speed of the advancing heat wave is smoothly decelerated in a controlled manner, constructing a thermal resistance transition bridge extending from the high thermal conductivity region to the high heat capacity region. When the heat flow passes through the high thermal resistance terminal section, due to the dynamic buffering of the previous stepwise damping, the heat flow is deeply stretched and evenly spread on the time axis, thus leaving sufficient time for the phase change heat storage material to undergo large-area, deep-level uniform solid-liquid phase change behavior. It uses its intrinsic high latent heat to deeply absorb the heat wave peak, thereby significantly reducing the junction temperature peak during power change. Attached Figure Description

[0014] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of the present invention and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained from these drawings without creative effort.

[0015] Figure 1 This is a schematic diagram of the structure of an embedded double-sided heat dissipation silicon carbide power module package according to an embodiment of the present invention.

[0016] Figure 2 This is an exploded structural diagram of an embedded double-sided heat dissipation silicon carbide power module package according to an embodiment of the present invention.

[0017] Figure 3 This is a schematic diagram of the heat sink structure on the side of the core heat sink frame of an embedded double-sided heat sink silicon carbide power module package according to an embodiment of the present invention.

[0018] Icons: Lower heat dissipation copper layer 1, Lower silicon nitride ceramic layer 2, Lower circuit copper layer 3, Silicon carbide power module 4, Upper circuit copper layer 5, Upper silicon nitride ceramic layer 6, Upper heat dissipation copper layer 7, First conductive post 8, Metal layer 9, Slot 10, Heat sink 12, Positive power terminal 14, Negative power terminal 15, Main branch 16, Branch section 17, Terminal section 18. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to represent selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0020] Example Combination Figures 1 to 3 As shown, this embodiment provides an embedded double-sided heat-dissipating silicon carbide power module 4 package, including, from bottom to top, a lower heat-dissipating copper layer 1, a lower silicon nitride ceramic layer 2, a lower circuit copper layer 3, multiple silicon carbide power modules 4, an upper circuit copper layer 5, an upper silicon nitride ceramic layer 6, and an upper heat-dissipating copper layer 7; wherein, the silicon carbide power module 4 is electrically connected to the lower circuit copper layer 3, and its source is electrically connected to the upper circuit copper layer 5 through multiple first conductive posts 8; a metal layer 9 is also provided on the layer where the silicon carbide power module 4 is located; the metal layer 9 is a copper layer, and a surface with a surface that is connected to the heat-dissipating copper layer 7. The silicon carbide power module 4 is adapted to a slot 10; multiple heat sinks 12 are disposed within the slot 10 surrounding the silicon carbide power module 4 and bonded to the lower circuit copper layer 3 by a thermally conductive insulating solid adhesive layer; each heat sink 12 includes a main stem 16 near the silicon carbide power module 4, a branch section 17 connected to the main stem 16, and a terminal section 18 connected to the branch section 17; the main stem 16 is made of metallic copper; the branch section 17 is made of aluminum nitride ceramic and has multiple support arms; the terminal section 18 is filled with paraffin phase change material.

[0021] In this embodiment, active metal brazing technology is used to achieve high-temperature metallurgical fusion between the aluminum nitride ceramic branch 17 and the copper main body 16 in a high-temperature vacuum brazing furnace under silver-copper-titanium brazing medium, ensuring stable connection and heat transfer. The terminal portion 18 can be an extension of the branch portion 17 and forms an open-top filling groove, which is sealed by welding a metal cover plate after filling with paraffin phase change material.

[0022] The silicon carbide power module 4 is securely soldered to the lower circuit copper layer 3 via a nano-silver sintering layer. The first conductive post 8 is a copper post, which passes through the frame hole and achieves electrical interconnection between the chip source and the upper circuit copper layer 5 via nano-silver sintering.

[0023] Multiple heat sinks are arranged to form a core heat dissipation frame; the three-level functional gradient thermal control network inside the core heat dissipation frame is approximately equivalent to a series thermal resistance model in the heat conduction path, and its total thermal resistance satisfies the following relationship equation: ; in, This represents the total equivalent thermal resistance of the core heat dissipation frame. This represents the equivalent thermal resistance of the main stem 16. This represents the equivalent thermal resistance of branch section 17. This represents the equivalent thermal resistance of the phase change thermal storage material at the terminal portion 18. This indicates the equivalent calculated length of the main stem 16; This indicates the equivalent calculated length of branch section 17; This represents the equivalent calculated length of the phase change thermal storage material at the tip 18; This indicates the intrinsic thermal conductivity of the main body material 16; This indicates the intrinsic thermal conductivity of the material in branch section 17; This represents the equivalent combined thermal conductivity of the phase change thermal storage material at the terminal portion 18 before and after the solid-liquid phase change. This represents the equivalent heat dissipation cross-sectional area of ​​the main stem 16; This represents the equivalent heat dissipation cross-sectional area of ​​branch section 17; This represents the equivalent heat dissipation cross-sectional area of ​​the phase change thermal storage material at the tip 18; Wherein, the following conditions are met: .

[0024] When the system encounters a strong transient heat flow, the heat flow eliminates local heat accumulation through the main body made of copper. Then, the heat flow enters the branch section of the laterally diverging aluminum nitride ceramic. Through the branch section, the heat flow decreases in a stepwise manner from the inside to the outside, and the intrinsic thermal conductivity of the material decreases stepwise. During the deep diffusion process, the heat flow is intercepted by the thermal resistance gradient and spatially distributed, so that the speed of the advancing heat wave is smoothly decelerated in a controlled manner, constructing a thermal resistance transition bridge extending from the high thermal conductivity region to the high heat capacity region. When the heat flow passes through the high thermal resistance terminal section, it is deeply stretched and evenly spread on the time axis due to the dynamic buffering of the previous stepwise damping. This allows sufficient time for the paraffin phase change material to undergo a large-area, deep, uniform solid-liquid phase change behavior, using its intrinsic high latent heat to deeply absorb the peak value of the heat wave, thereby significantly reducing the junction temperature peak value during power surges.

[0025] The paraffin phase change material is a microcapsule paraffin phase change material coated with silicon dioxide. When the silicon carbide power module 4 experiences a sudden thermal shock, the microcapsule paraffin phase change material absorbs a large amount of heat energy using latent heat. The high rigidity of silicon dioxide can effectively suppress the volume expansion during the paraffin phase change process while the paraffin phase change material absorbs the transient thermal shock of the chip, thus maintaining the mechanical integrity of the vertical stacked structure of the silicon carbide power module 4.

[0026] In this embodiment, the bottom substrate unit formed by the lower heat dissipation copper layer 1, the lower silicon nitride ceramic layer 2, and the lower circuit copper layer 3 is geometrically mirror-symmetrical to the top substrate unit formed by the upper circuit copper layer 5, the upper silicon nitride ceramic layer 6, and the upper heat dissipation copper layer 7. Extremely low warpage balance in the packaging structure is achieved through top-to-bottom thermal stress offsetting.

[0027] The outer metal layer 9 also includes a positive power terminal 14 and a negative power terminal 15 formed by a laminated insulating film to achieve low parasitic inductance. The positive power terminal 14 and the negative power terminal 15 are positioned on opposite sides of the module package to reduce electromagnetic interference. By vertically engaging the first conductive post 8 with the laminated power terminals, the commutation loop area is minimized, reducing voltage spikes and switching losses, and achieving low parasitic inductance.

[0028] The above are merely preferred embodiments of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions that fall within the scope of the present invention are within the scope of protection of the present invention.

[0029] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0031] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0032] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

Claims

1. An embedded double-sided heat dissipation silicon carbide power module package, characterized in that, The system comprises, from bottom to top, a lower heat dissipation copper layer (1), a lower silicon nitride ceramic layer (2), a lower circuit copper layer (3), multiple silicon carbide power modules (4), an upper circuit copper layer (5), an upper silicon nitride ceramic layer (6), and an upper heat dissipation copper layer (7); wherein, the silicon carbide power module (4) is electrically connected to the lower circuit copper layer (3), and its source is electrically connected to the upper circuit copper layer (5) through multiple first conductive posts (8); a metal layer (9) is also provided on the layer where the silicon carbide power module (4) is located; a slot (10) adapted to the silicon carbide power module (4) is provided on the metal layer (9); multiple heat sinks (12) are provided in the slot (10) surrounding the silicon carbide power module (4); the multiple heat sinks (12) are connected to the upper circuit copper layer (5) through multiple first conductive posts (8); A thermally conductive and insulating solid adhesive layer is bonded and fixed on the lower circuit copper layer (3) and surrounds it to form a core heat dissipation frame; the heat dissipation component (12) includes a main body (16) near the silicon carbide power module (4), a branch section (17) connected to the main body (16), and a terminal section (18) connected to the branch section (17); the main body (16) is made of a high thermal conductivity metal material; the branch section (17) is made of a high thermal conductivity insulating ceramic material and has multiple support arms; the terminal section (18) is an extension of the branch section (17) and forms a filling structure for accommodating paraffin phase change material; the main body (16) is made of copper; the branch section (17) is made of aluminum nitride ceramic; the terminal section (18) is filled with paraffin phase change material; Among them, the equivalent heat transfer resistance of the main stem (16) The equivalent thermal resistance of the branch section (17) The equivalent thermal resistance of the phase change thermal storage material at the terminal portion (18) ,satisfy: .

2. The embedded double-sided heat dissipation silicon carbide power module package according to claim 1, characterized in that, The three-level functional gradient thermal control network inside the core heat dissipation framework is approximately equivalent to a series thermal resistance model in the heat conduction path, and its total thermal resistance satisfies the following relationship equation: ； in, This represents the total equivalent thermal resistance of the core heat dissipation frame. Indicates the equivalent computational length of the main stem (16); Indicates the equivalent calculated length of the branch section (17); The equivalent calculated length of the phase change thermal storage material at the tip (18) is indicated; Indicates the intrinsic thermal conductivity of the main body (16) material; Indicates the intrinsic thermal conductivity of the material of the branch section (17); The equivalent comprehensive thermal conductivity of the phase change thermal storage material at the end (18) before and after the solid-liquid phase change occurs; This represents the equivalent heat dissipation cross-sectional area of ​​the main stem (16); This represents the equivalent heat dissipation cross-sectional area of ​​the branch section (17); This represents the equivalent heat dissipation cross-sectional area of ​​the phase change thermal storage material at the tip (18).

3. The embedded double-sided heat dissipation silicon carbide power module package according to claim 1, characterized in that, The bottom substrate unit formed by the lower heat dissipation copper layer (1), the lower silicon nitride ceramic layer (2), and the lower circuit copper layer (3) is geometrically mirror-symmetrical to the top substrate unit formed by the upper circuit copper layer (5), the upper silicon nitride ceramic layer (6), and the upper heat dissipation copper layer (7).

4. The embedded double-sided heat dissipation silicon carbide power module package according to claim 1, characterized in that, The first conductive post (8) is a copper post.

5. The embedded double-sided heat dissipation silicon carbide power module package according to claim 1, characterized in that, The paraffin phase change material is a silica-coated microcapsule paraffin phase change material.

6. The embedded double-sided heat dissipation silicon carbide power module package according to claim 1, characterized in that, The metal layer (9) is further provided with a positive power terminal (14) and a negative power terminal (15) formed by the formation of a stacked low parasitic inductance through a stacked insulating film.

7. The embedded double-sided heat dissipation silicon carbide power module package according to claim 6, characterized in that, The positive power terminal (14) and the negative power terminal (15) are located on opposite sides of the module package.

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