Semiconductor device and method for manufacturing the same

Abstract

The present application provides a semiconductor device that achieves an improvement in reliability of connection from a semiconductor element sealed in a semiconductor package to an external circuit or the like. A semiconductor device (1) includes a plurality of wiring members (3) and a semiconductor package (5) disposed on the wiring members (3) and sealing a semiconductor element (50) by a first sealing member (80). The semiconductor package (5) has a connecting member (30) having one end disposed on the semiconductor element (50) and joined to an electrode of the semiconductor element (50), and the other end of the connecting member (30) is disposed directly above the wiring member (3).

Description

Technical Field

[0001] This invention relates to a semiconductor device and a method for manufacturing the same. Background Technology

[0002] In the past, various methods have been studied for mounting semiconductor packages containing semiconductor elements to external circuits, etc. For example, Patent Document 1 describes a semiconductor package with a cross-section exposing the bonding lines on the side. A conductive rubber component is provided on an external substrate to press the semiconductor package onto the side, thereby fixing the semiconductor package and making electrical connections (hereinafter sometimes simply referred to as "connections") to it.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2011-124341 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] The semiconductor package described in Patent Document 1 exposes the cross-section of a bonding wire, one end of which is bonded to a semiconductor element, on the side of the semiconductor package as a terminal. This reduces the number of components from the semiconductor element to the side of the semiconductor package, and is expected to improve the reliability of the internal connections of the semiconductor package. However, sometimes it is also required to improve the reliability of connections to external circuits, etc.

[0008] The present invention was proposed to solve this problem, and its purpose is to provide a semiconductor device that improves the reliability of the connection from a semiconductor element sealed in a semiconductor package to external circuits, etc.

[0009] Methods for solving problems

[0010] To address this issue, the semiconductor device of the present invention includes: a plurality of wiring components; and a semiconductor package disposed on the wiring components, which seals a semiconductor element by a first sealing component, the semiconductor package having a connector with one end located on the semiconductor element and engaged with an electrode of the semiconductor element, the other end of the connector being located directly above the wiring components.

[0011] Invention Effects

[0012] According to the present invention, a semiconductor device can be provided that improves the reliability of the connection from a semiconductor element sealed in a semiconductor package to external circuits, etc. Attached Figure Description

[0013] Figure 1AThis is a schematic perspective view illustrating the semiconductor device of the first embodiment.

[0014] Figure 1B Is Figure 1A A perspective view of the sealing component.

[0015] Figure 2A This is a schematic perspective view illustrating the semiconductor package according to the first embodiment.

[0016] Figure 2B From Figure 2A A three-dimensional view taken from the bottom side of the image.

[0017] Figure 2C Is Figure 2A A perspective view of the sealing component.

[0018] Figure 3A This is a schematic top view illustrating a portion of the semiconductor device according to the first embodiment.

[0019] Figure 3B This is a schematic bottom view illustrating a portion of the semiconductor device according to the first embodiment.

[0020] Figure 3C This is a schematic top view illustrating a portion of the semiconductor device according to the first embodiment.

[0021] Figure 4 yes Figure 3A A cross-sectional view at line IV-IV.

[0022] Figure 5 This is a flowchart illustrating a general manufacturing method according to the first embodiment.

[0023] Figure 6A This is a schematic perspective view of the first metal plate and the wiring metal plate in the semiconductor package forming process of the manufacturing method of the first embodiment.

[0024] Figure 6B This is a schematic perspective view illustrating the state in which semiconductor elements, control ICs, and capacitors are arranged during the semiconductor package formation process in the manufacturing method of the first embodiment.

[0025] Figure 6C This is a schematic perspective view illustrating the state in which the connector is arranged during the semiconductor package forming process in the manufacturing method of the first embodiment.

[0026] Figure 6D This is a schematic perspective view illustrating the state in which the semiconductor package is sealed using a first sealing member during the semiconductor package formation process in the manufacturing method of the first embodiment.

[0027] Figure 7A This is a schematic perspective view illustrating the wiring component prepared in the manufacturing method of the first embodiment.

[0028] Figure 7B This is a schematic perspective view illustrating the state in which a semiconductor package is disposed in the manufacturing method of the first embodiment.

[0029] Figure 7C This is a schematic perspective view illustrating the state of being sealed by the second sealing member in the manufacturing method of the first embodiment.

[0030] Figure 8 This is a schematic cross-sectional view illustrating a portion of a semiconductor device according to the second embodiment.

[0031] Figure 9A This is a schematic perspective view illustrating the state in which the second metal plate and the connector are arranged in the semiconductor package forming process of the manufacturing method of the second embodiment.

[0032] Figure 9B This is a schematic perspective view illustrating the state in which the semiconductor package is sealed using a first sealing member during the semiconductor package formation process in the manufacturing method of the second embodiment.

[0033] Figure 9C This is a schematic perspective view illustrating the state of being sealed by the second sealing member in the manufacturing method of the second embodiment. Detailed Implementation

[0034] Embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to these embodiments. Furthermore, in the drawings, the size, shape, and positional relationship of some components are sometimes exaggerated when some components are omitted.

[0035] [Semiconductor Device (First Embodiment)]

[0036] Reference Figures 1A to 4 The semiconductor device 1 according to the first embodiment will be described. As an example, the semiconductor device 1 is a bridge rectifier having the same function as a known bridge diode, capable of full-wave rectification of alternating current to obtain direct current. Figure 1A As illustrated, the semiconductor device 1 is sealed by the second sealing member 7 and can be connected to the outside via a total of four connecting pins 9, two for AC input and two for DC output.

[0037] like Figure 1BAs shown, the semiconductor device 1 includes multiple wiring components 3 and semiconductor packages 5. The semiconductor device 1 can have multiple semiconductor packages 5; in this case, it has four semiconductor packages 5. Additionally, the semiconductor device 1 also includes a second sealing component 7. The structure of the semiconductor device 1 will be described below.

[0038] (Wiring components)

[0039] Wiring component 3 is a component that connects the built-in electronic components to external circuits, etc. Here, wiring component 3 is a lead frame, and the built-in electronic components are semiconductor packages 5. The semiconductor device 1 has multiple wiring components 3 that are separate from each other. Here, the number of wiring components 3 is four.

[0040] One end of each of the plurality of wiring components 3 is formed with a predetermined shape. Furthermore, the upper surfaces of one end of each of the plurality of wiring components 3 are on the same plane. A semiconductor package 5 is disposed on these wiring components 3 at one end. This facilitates the placement of the semiconductor package 5 onto the wiring components 3. The upper surface refers to… Figure 1B The upper side of the middle.

[0041] The other ends of multiple wiring components 3 are arranged parallel to each other at predetermined intervals, forming connecting pins 9. Here, the wiring components 3 are arranged from one end towards the side where the semiconductor package 5 is disposed, i.e. Figure 1B The upper part of the wiring component 3 is stepped. Furthermore, the other end of the wiring component 3 extends in a straight line at a position higher than the upper surface of the first end.

[0042] The material of the wiring component 3 can be metals such as gold, silver, and copper, or alloys thereof; in this case, it is copper. Furthermore, the shape of one end of the wiring component 3 and the spacing of the other end can be configured in various shapes and spacings depending on the application.

[0043] (Semiconductor package)

[0044] The semiconductor package 5 is an electronic component that seals a semiconductor element. The semiconductor package 5 is disposed on the wiring component 3 and the semiconductor element 50 is sealed by the first sealing component 80. The semiconductor package 5 has a plurality of terminals 40 on one side, with the mating surface exposed from the first sealing component 80, and is configured to bridge different wiring components 3.

[0045] like Figure 2A , Figure 2BAs illustrated, the semiconductor package 5 is cuboid in shape and has two terminals 40 on one side. The terminals 40 expose the mating surface 40A from the first sealing member 80. The semiconductor package 5 is a rectifier element capable of determining the voltage level relationship between the two terminals 40 and switching between a conducting and a non-conducting state. Furthermore, the shape of the semiconductor package 5 is not limited to a cuboid shape.

[0046] like Figure 2B , Figure 2C As illustrated, the semiconductor package 5 includes a semiconductor element 50, a first metal plate 21, a connector 30, and terminals 40. Additionally, the semiconductor package 5 includes a control IC 60 and a capacitor 70. These elements or components of the semiconductor package 5 are sealed by a first sealing member 80. The control IC 60 and the capacitor 70 are disposed on the wiring metal plate 23 and connected to the semiconductor element 50.

[0047] The wiring metal plate 23, having a plurality of metal sheets with a predetermined pattern, is a component that forms the wiring inside the semiconductor package 5. The wiring metal plate 23 can be made of the same material as the wiring component 3. Furthermore, in the accompanying drawings, the pattern of the wiring metal plate 23 and the wiring inside the semiconductor package 5 are partially omitted from the description.

[0048] (terminal)

[0049] Terminal 40 is a component or part of a component that serves as an entrance / exit point on the side of the semiconductor package 5 in connection with external circuits, etc. Here, the external circuits, etc., to be connected are wiring components 3. Terminal 40 uses its outer surface as a mating surface 40A that engages with wiring components 3, so that mating surface 40A is exposed from the first sealing component 80.

[0050] (Semiconductor components)

[0051] Semiconductor element 50 is a circuit element formed on a semiconductor substrate. Here, semiconductor element 50 is a MOSFET, which can be switched between an on and off state by a gate voltage. The gate voltage is controlled by control IC 60 to be either high or low based on the voltage relationship between the two terminals 40. The operating power supply voltage of control IC 60 is maintained by capacitor 70.

[0052] The semiconductor element 50 has a first electrode 51 on its first surface 50A, which is the side facing the wiring component 3 in the semiconductor device 1, and a second electrode 52 on its second surface 50B, which is the side opposite to the wiring component 3. The semiconductor element 50 switches between the first electrode 51 and the second electrode 52. Furthermore, the first surface 50A is the surface facing the semiconductor package 5 that has the terminal 40, and the second surface 50B is the surface opposite to the first surface 50A.

[0053] (First metal plate)

[0054] The first metal plate 21 is a component that serves as a terminal 40 of the semiconductor package 5. The semiconductor package 5 uses the first metal plate 21, which is bonded to the first electrode 51 of the semiconductor element 50, as one of the terminals 40. Figure 3A As illustrated, the first metal plate 21, when viewed from above, is rectangular and has a constant thickness; it is a flat plate. One side of the first metal plate 21 is bonded to the first electrode 51 of the semiconductor element 50, and the other side, as the bonding surface 40A of the terminal 40, protrudes from the first sealing member 80 and is bonded to the wiring member 3. The first metal plate 21 is located directly above the wiring member 3. Furthermore, the first electrode 51 of the semiconductor element 50 is located directly above the wiring member 3, separated by the first metal plate 21.

[0055] like Figure 4 As illustrated, the first metal plate 21 is joined to both the first electrode 51 and the wiring component 3 via a joining member 90. The joining member 90 is, for example, solder. The first metal plate 21 can be made of the same material as the wiring component 3.

[0056] (Connector)

[0057] Connector 30 is a component that relays the connection between semiconductor element 50 and other components. For example... Figure 3A , Figure 3B As illustrated, one end of the connector 30 is located on the semiconductor element 50. The connector 30 is engaged with the electrode of the semiconductor element 50, and the other end is located directly above the wiring component 3.

[0058] like Figure 2C , Figure 4 As illustrated here, the connector 30 is a clip 31 with one end 31A located on the semiconductor element 50 and engaged with the second electrode 52. The clip 31 is formed by bending a plate-shaped component. The clip 31 is attached to the semiconductor element 50. Figure 4 The upper surface of the clip 31, i.e., the second surface 50B, extends away from the semiconductor element 50 and curves downwards in a stepped shape. The lower surface of the other end 31B of the clip 31 is at the same height as the lower surface of the first metal plate 21. Therefore, the lower surfaces of the first metal plate 21 and the other end 31B of the clip 31 are parallel to the upper surfaces of different wiring components 3 located on the same plane. Furthermore, in Figures 3A to 3C , Figure 4 The description of the second sealing component 7 is omitted.

[0059] The other end 31B of the clip 31, which is engaged with the second electrode 52, serves as another terminal 40. The outer surface (lower surface) of the semiconductor package 5 at the other end 31B of the clip 31, which is the mating surface 40A exposed from the first sealing member 80, engages with the wiring member 3. The clip 31 can contact the surface of the wiring member 3, thus expanding the mating surface. This reduces the resistance value, increases the allowable current, and improves the reliability of the connection.

[0060] like Figure 4 As illustrated, clip 31 is engaged with the second electrode 52 and wiring component 3 via engagement member 90. Clip 31 can be made of the same material as wiring component 3.

[0061] (First sealing component)

[0062] The first sealing member 80 is a member that integrally seals the components constituting the semiconductor package 5. The first sealing member 80 exposes the mating surface 40A of the terminal 40 to form the outer surface of the semiconductor package 5.

[0063] The first sealing member 80 fills the interior of the semiconductor package 5 and seals it solidly. This fixes the relative positions of the semiconductor element 50, control IC 60, capacitor 70, first metal plate 21, wiring metal plate 23, and clip 31. The material of the first sealing member 80 can be, for example, a thermosetting epoxy resin.

[0064] The side of the semiconductor package 5 with two terminals 40 faces the wiring component 3, and the mating surface 40A of the terminals 40 is mated to the upper surface of the wiring component 3. For example... Figure 4 As illustrated, the two ends of the semiconductor package 5 are respectively connected to two different wiring components 3. In this way, the semiconductor package 5 is positioned above the wiring components 3 to bridge the separate wiring components 3.

[0065] (Second sealing component)

[0066] The semiconductor device 1 may also include a second sealing member 7. The second sealing member 7 is a member that integrally seals the wiring member 3 and the semiconductor package 5. Here, the second sealing member 7 seals one end of the wiring member 3 and the semiconductor package 5. The other end of the wiring member 3 is exposed from the second sealing member 7 and arranged at predetermined intervals.

[0067] The second sealing member 7 fills and solidifies in contact with the first sealing member 80 of the semiconductor package 5 and the wiring member 3. This fixes the relative positional relationship between the semiconductor package 5 and the wiring member 3. The second sealing member 7 can be made of the same material as the first sealing member 80.

[0068] Furthermore, the first sealing member 80 does not seal the wiring member 3. The first sealing member 80 can be in contact with or separated from the wiring member 3. In addition, the first sealing member 80 is in contact with the second sealing member 7, and has an interface at a location on the outer surface of the semiconductor package 5.

[0069] Furthermore, regarding the configuration that bridges different wiring components 3, it can be done as follows: Figure 3B As illustrated, the wiring component 3 adjacent to the bonding semiconductor package 5 can also be as follows: Figure 3C As illustrated, there are other wiring components 3 between the joined wiring components 3. In either case, the joint surface 40A is included in the wiring component 3 when viewed from above.

[0070] In the semiconductor device 1 with the above structure, the semiconductor package 5 has a connector 30 with one end located on the semiconductor element 50 and connected to the electrode of the semiconductor element 50, and the other end of the connector 30 located directly above the wiring component 3. This reduces the number of components and the number of connections from the semiconductor element 50 to the position directly above the wiring component 3. Furthermore, by increasing the cross-sectional area from the position directly above the wiring component 3 to the wiring component 3, the reliability of the connection from the semiconductor element to external circuits, etc., can be improved.

[0071] In the semiconductor device 1, the semiconductor package 5 has a plurality of terminals 40 on one side that expose the bonding surface 40A from the first sealing member 80, and is configured to bridge different wiring components 3, thereby increasing the freedom of arrangement (layout) of the internal components or parts of the semiconductor device.

[0072] The semiconductor device 1 has a semiconductor package 5 that seals the semiconductor element 50 and the connector 30 using a first sealing member 80, thereby fixing the relative positional relationship between the semiconductor element 50 and the connector 30 and improving the reliability of the connection.

[0073] One end of the semiconductor device 1 is located on the semiconductor element 50, and the clip 31 that is engaged with the electrode of the semiconductor element 50 serves as the connector 30, and the other end serves as the terminal of the semiconductor package 5. This reduces the number of components and the number of connections from the semiconductor element 50 to the wiring component 3, thereby further improving reliability.

[0074] Conventionally, components like clips 31 are sometimes placed outside the semiconductor package, with one end of the clip engaging a terminal on the upper surface of the semiconductor package and the other end engaging a wiring component at the height of the lower surface of the semiconductor package. In this case, the clips become enormous, the semiconductor device becomes larger, and the layout is greatly restricted. By incorporating clips 31 within the semiconductor package 5, the semiconductor device 1 can achieve greater layout freedom and miniaturization of the semiconductor device.

[0075] Furthermore, the semiconductor package is formed to seal the height of other components, such as the capacitor 70, which is thicker than the semiconductor element 50. Therefore, if a terminal is provided on the upper surface of the semiconductor package, an additional component is needed to connect the terminal to the second electrode 52 of the semiconductor element 50. The semiconductor device 1 has a clip 31 in the semiconductor package 5, thereby eliminating the need for a terminal on the upper surface of the semiconductor package, enabling component reduction and miniaturization.

[0076] In the semiconductor device 1, the semiconductor package 5 has a plurality of terminals on one side that expose the bonding surface from the first sealing member 80, and is configured to bridge different wiring members 3, thereby enabling bonding with the wiring members 3 from below the semiconductor package 5 itself and suppressing the layout area.

[0077] Method for manufacturing a semiconductor device (first embodiment)

[0078] Next, refer to Figures 5 to 7C The manufacturing method S1 of the semiconductor device according to the first embodiment will be described. For example... Figure 5 As illustrated, the semiconductor device manufacturing method S1 includes a wiring component preparation step S10, a semiconductor package formation step S21, and an arrangement step S30, and further includes a sealing step S40. The structure of each part of the semiconductor device manufacturing method S1 will be described below.

[0079] Furthermore, the wiring component preparation step S10 and the semiconductor package formation step S21 can be performed in parallel and independently, and can be performed before the configuration step S30. Hereinafter, the process will be described in the order of semiconductor package formation step S21 and wiring component preparation step S10.

[0080] (Semiconductor package formation process)

[0081] Semiconductor package formation step S21 is a step in which a semiconductor package 5 disposed on a wiring member 3 is formed by sealing a semiconductor element 50 with a first sealing member 80. In semiconductor package formation step S21, the semiconductor element 50, which has a first electrode 51 and a second electrode 52 on opposite sides, is sealed with the first sealing member 80 to form a semiconductor package 5 with a plurality of terminals 40 exposed from the first sealing member 80 on one side having a bonding surface 40A. The semiconductor package 5 has a first metal plate 21 bonded to the first electrode 51 and a connector 30 with one end located on the semiconductor element 50 and bonded to the second electrode 52, with the other end of the first metal plate 21 and the connector 30 serving as terminals 40. Here, the connector 30 is a clip 31.

[0082] The semiconductor package formation process S21 includes a metal plate preparation process, a component placement process, and a component sealing process.

[0083] The metal plate preparation process is the process of preparing the first metal plate 21 and the wiring metal plate 23. Figure 6A An example is shown of a first metal plate 21 and a wiring metal plate 23 in a semiconductor package 5. These are described as a set of metal plates. Furthermore, the wiring metal plate 23 is composed of multiple metal sheets that are separated from each other. In the metal plate preparation process, the first metal plate 21 and the wiring metal plate 23 are prepared with the relative positional relationship of the set of metal plates fixed.

[0084] For example, the metal plate preparation process can prepare a metal plate connector by extending portions of each metal sheet of the first metal plate 21 and the wiring metal plate 23 to form extended portions, and connecting these extended portions together to form an integral metal plate connector. The metal plate connector can also connect multiple sets of metal plates. Furthermore, after the component sealing process, a package monolithization process can be provided to cut off the extended portions exposed from the first sealing member 80 to monolithize the semiconductor package 5.

[0085] The component configuration process is a process of configuring semiconductor components 50, control IC 60 and capacitor 70 on the prepared first metal plate 21 and wiring metal plate 23, and then configuring clips 31.

[0086] like Figure 6B As illustrated, the semiconductor element 50 is placed on the first metal plate 21 such that its first surface 50A, having a first electrode 51, faces the first metal plate 21. Before placing the semiconductor element 50, a paste-like bonding component is applied to the first metal plate 21. The paste-like bonding component is, for example, solder paste. Additionally, a paste-like bonding component is applied to the wiring metal plate 23, where the control IC 60 and the capacitor 70 are placed.

[0087] Next, in Figure 6B The second electrode 52 of the second surface 50B of the semiconductor element 50, which forms the upper surface, is coated and formed into a paste-like bonding component. Then, as... Figure 6C As illustrated, one end 31A is positioned on the second surface 50B, with the clip 31 mounted opposite the second electrode 52.

[0088] Next, the bonding components, which are made into a paste by reflow, are melted to bond the first metal plate 21 and the clip 31 to the semiconductor element 50, and the wiring metal plate 23 is bonded to the control IC 60 and the capacitor 70.

[0089] The component sealing process involves sealing the first metal plate 21, wiring metal plate 23, semiconductor element 50, control IC 60, capacitor 70, and clip 31 with the first sealing member 80. In this process, the first sealing member 80, before curing, is melted and used to cover the first metal plate 21 and other components joined during the component assembly process. It is then shaped and cured using a cuboid-shaped mold or similar material. Additionally, the extended portion of the metal plate connector is exposed and sealed.

[0090] The lower surface of the first metal plate 21 and the lower surface of the other end 31B of the clip 31 are the mating surfaces of the terminals of the semiconductor package 5, and are exposed from the first sealing member 80. Furthermore, the lower surface refers to... Figure 6C The lower face in the middle.

[0091] In the metal plate connector, the extended portion protrudes from the cured first sealing member 80, and a monolithic encapsulation process is performed to cut off the extended portion. Then, as... Figure 6D As illustrated, a semiconductor package 5 with a cuboid shape is obtained, and the semiconductor package formation process S21 is completed. The semiconductor package 5 has two electrodes on its lower surface side, exposing the electrode bonding surfaces.

[0092] (Preparation process for wiring components)

[0093] The wiring component preparation process S10 is a process of preparing multiple wiring components 3 in a fixed manner. Figure 7A Example of a plurality of wiring components 3 included in a semiconductor device 1. Here, the plurality of wiring components 3 are four lead frames that are separate from each other. They will be described as a group of wiring components 3. In the wiring component preparation step S10, the wiring components 3 are prepared in a state in which the relative positional relationship of a group of wiring components 3 is fixed.

[0094] For example, a wiring component connector can be prepared by extending the other end 3B of the wiring component 3 to form an extension portion and connecting these extension portions together to form an integral wiring component connector. The wiring component connector can also connect multiple sets of wiring components 3. When preparing the wiring component connector, a configuration step S30 is performed in the state of the wiring component connector. After a sealing step S40, a monolithicization step is performed by cutting the wiring component connector at a position provided at the end of the wiring component 3 to monolithize the semiconductor device 1. Furthermore, in addition to the other end 3B of the extended wiring component 3, there may also be a connecting portion, which can also be cut off during the monolithicization step.

[0095] (Configuration process)

[0096] The configuration step S30 is a process of configuring the semiconductor package 5 on the wiring component 3. In the configuration step S30, the side of the semiconductor package 5 with terminals is positioned opposite the wiring component 3, and it is configured on one end side 3A of the wiring component 3 in a bridging manner between different wiring components 3.

[0097] like Figure 7B As illustrated, with the terminal-side facing the wiring component 3, four semiconductor packages 5 are placed on the upper surface of the wiring component 3. Before placing the semiconductor packages 5, a bonding component formed as a paste is coated on the upper surface of the wiring component 3. Then, the bonding component, which is in the form of a paste, is melted by reflow to bond the wiring component 3 to the semiconductor packages 5.

[0098] (Sealing process)

[0099] The sealing process S40 is a process in which one end 3A of the wiring component 3 and the semiconductor package 5 are sealed using the second sealing member 7. In the sealing process S40, the second sealing member 7, before curing, is melted and covers one end 3A of the wiring component 3 and the semiconductor package 5, which are joined in the configuration process S30, and is formed and cured using a mold of a specified shape or the like.

[0100] The other end 3B of the wiring component 3 protrudes from the cured second sealing component 7. Furthermore, when a wiring component connector is prepared, the other end 3B extends and connects. In this case, a single-piece cutting process is performed, cutting the other end 3B to a predetermined length. If other connecting parts exist, they are also cut. Additionally, Figure 7C An example of a monolithic semiconductor device 1 is shown.

[0101] In the manufacturing method S1 of the semiconductor device having the above structure, a semiconductor package 5 having multiple terminals on one side is formed, with the side having terminals facing the wiring component 3, and the semiconductor package 5 is arranged in a bridging manner between different wiring components 3. This allows for smooth bonding of the semiconductor package 5 to the separate lead frames using reflow soldering. Even when the semiconductor package 5 has two terminals 40, bonding to the separate wiring components 3 can be performed smoothly, thereby improving the reliability of the connection.

[0102] In addition, one end of the semiconductor package 5 is located on the semiconductor element 50, and the other end of the clip 31, which is engaged with the second electrode 52, is used as a terminal. This reduces the number of components and the number of engagements required to form a terminal, thereby improving the reliability of the connection.

[0103] As described above, conventionally, components such as clips 31 are sometimes placed outside the semiconductor package. In this case, when the wiring components, the semiconductor package, and one end of the clip are stacked sequentially and joined by reflow bonding, positional misalignment can easily occur. The semiconductor device manufacturing method S1, by incorporating clips 31 into the semiconductor package 5, can fix the relative positional relationship between the semiconductor element 50 and the clips 31, thereby suppressing positional misalignment and improving the reliability of the connection.

[0104] [Semiconductor Device (Second Embodiment)]

[0105] Next, refer to Figures 8 to 9C The semiconductor device 2 of the second embodiment will be described. The semiconductor device 2 differs from the semiconductor device 1 of the first embodiment in that it includes a semiconductor package 6 instead of a semiconductor package 5; otherwise, they are the same. Therefore, the semiconductor package 6 will be described.

[0106] like Figure 8 As illustrated, the connector 30 of the semiconductor package 6 is not a clip, but a bonding wire 32. Furthermore, the semiconductor package 6 has a second metal plate 22, which serves as another terminal 40. Other aspects are the same as those of the semiconductor package 5. Additionally, in Figure 8 The description of the second sealing component 7 is omitted.

[0107] (Joint line)

[0108] The bonding wire 32 is a connector 30 in the semiconductor package 6. One end 32A of the bonding wire 32 is located on the semiconductor element 50 and is bonded to the second electrode 52. The other end 32B of the bonding wire 32 is bonded to the second metal plate 22. In addition, the other end 32B is located directly above the wiring component 3.

[0109] The bonding line 32 may be a known bonding line used for connection in the semiconductor field.

[0110] (Second metal plate)

[0111] The second metal plate 22 is a component that forms the terminal 40 of the semiconductor package 6. Here, the second metal plate 22 is rectangular in shape when viewed from above, and is a flat plate with a constant thickness. The second metal plate 22... Figure 8 The upper surface of the semiconductor package 6, i.e., one side, is joined with the bonding wire 32. The other side is the outer side of the semiconductor package 6, where the bonding surface 40A, serving as the terminal 40, protrudes from the first sealing member 80 and is joined opposite to the wiring member 3. The second metal plate 22 is located directly above the wiring member 3. Furthermore, the other end 32B of the bonding wire 32 is located directly above the wiring member 3, separated by the second metal plate 22.

[0112] The lower surface of the second metal plate 22 is at the same height as the lower surface of the first metal plate 21. This allows the lower surfaces of the first metal plate 21 and the second metal plate 22 to be parallel to the upper surfaces of the different wiring components 3 located on the same plane.

[0113] The shape, thickness, and position of the second metal plate 22 can be adjusted according to the shape and configuration of the wiring component 3. In addition, by adjusting the shape and position of the second metal plate 22 to make the semiconductor package 6 smaller, and by adjusting the shape of the wiring component 3 according to the semiconductor package 6, miniaturization of the semiconductor device 2 can be achieved.

[0114] The second metal plate 22 is joined to the wiring component 3 via the joining member 90. The second metal plate can be made of the same material as the wiring component 3.

[0115] In the semiconductor device 2, the semiconductor package 6 has a second metal plate 22 serving as another terminal. A bonding wire 32, with one end located on the semiconductor element 50 and bonded to the electrode of the semiconductor element 50, and the other end bonded to the second metal plate, serves as a connector 30. This allows for improved reliability, similar to the first embodiment, and increases the flexibility in terminal configuration, adapting to the shape and arrangement of the wiring component 3. Furthermore, it enables further miniaturization of the semiconductor package 6, allowing for adjustments to the shape and arrangement of the wiring component 3 to achieve miniaturization of the semiconductor device.

[0116] Furthermore, the semiconductor package 6 uses the second metal plate 22 as a terminal 40, thereby enabling it to connect to the wiring component 3 with a larger area even when the connector 30 is used as the bonding wire 32, thus improving the reliability of the connection with the wiring component 3. Internally, the bonding wire 32 and the second metal plate 22 are fixed and protected by the first sealing member 80. Therefore, the semiconductor device 2 can increase the freedom of terminal configuration within the semiconductor package and improve connection reliability.

[0117] Method for manufacturing a semiconductor device (Second Embodiment)

[0118] Next, refer to Figure 5 as well as Figures 9A to 9C The semiconductor device manufacturing method S2 of the second embodiment will be described. The semiconductor device manufacturing method S2 differs from the semiconductor device manufacturing method S1 of the first embodiment in that it includes a semiconductor package forming step S22 instead of a semiconductor package forming step S21; otherwise, they are the same. Therefore, the semiconductor package forming step S22 will be described. Furthermore, similar to the first embodiment, the wiring component preparation step S10 and the semiconductor package forming step S22 can be performed in parallel and independently, and can be performed before the arrangement step S30.

[0119] Similar to the first embodiment, in the semiconductor package formation process S22, a semiconductor element 50 having a first electrode 51 and a second electrode 52 on opposite sides is sealed by a first sealing member 80, forming a semiconductor package 6 having a plurality of terminals 40 with a bonding surface 40A exposed from the first sealing member 80 on one side.

[0120] The formed semiconductor package 6 has a first metal plate 21 that is bonded to the first electrode 51, a connector 30 with one end located on the semiconductor element 50 and bonded to the second electrode 52, and a second metal plate 22 for the other end of the connector 30 to be bonded. The first metal plate 21 and the second metal plate 22 are configured as terminals 40. Here, the connector 30 is a bonding wire 32.

[0121] The semiconductor package formation process S22 in the second embodiment includes, like the first embodiment, a metal plate preparation process, a component placement process, and a component sealing process, and can include a package monolithization process. Furthermore, the metal plate preparation process, the component placement process, and the component sealing process differ from those in the first embodiment, while the others are common.

[0122] like Figure 9AAs illustrated, in addition to preparing the first metal plate 21 and the wiring metal plate 23, the metal plate preparation process of the second embodiment also prepares a second metal plate 22. Here, the second metal plate 22 is disposed at the other end of the clip in the semiconductor package 5 of the first embodiment. The second metal plate 22 may also be disposed at a different position than the other end of the clip.

[0123] Regarding the second metal plate 22, a portion can also be extended to form an extension portion, and this extension portion can be connected to the first metal plate 21 and the wiring metal plate 23 to form a metal plate connector. Furthermore, the preparation process of the first metal plate 21 and the wiring metal plate 23 is the same as that of the metal plate in the first embodiment.

[0124] like Figure 9B As illustrated, the component placement process in the second embodiment differs from that in the first embodiment in that the bonding wire 32 is placed instead of a clip; otherwise, they are the same. One end of the bonding wire 32 is bonded to the second electrode 52 of the semiconductor element 50. The other end is bonded to the upper surface of the second metal plate 22. Furthermore, similarly to the first embodiment, the first metal plate 21 is bonded to the semiconductor element 50 by a reflow method, and the wiring metal plate 23 is bonded to the control IC 60 and the capacitor 70.

[0125] In the component sealing process of the second embodiment, the lower surface of the second metal plate 22 is exposed from the first sealing member 80 instead of the lower surface of the other end of the clamp. Other aspects are the same as in the first embodiment.

[0126] Then, as Figure 9C As illustrated, by placing the formed semiconductor package 6 on the wiring component 3 and sealing one end of the wiring component 3 and the semiconductor package 6 with the second sealing component 7, the semiconductor device 2 of the second embodiment can be manufactured.

[0127] The semiconductor device manufacturing method S2 can change the position of the second metal plate 22 in the semiconductor package forming process S22, and can easily cope with changes in the shape and configuration of the wiring component 3.

[0128] Furthermore, semiconductor devices are not limited to bridge rectifiers, and semiconductor packages may not be rectifier elements. A semiconductor device may also consist of only one semiconductor package instead of multiple packages. A semiconductor package may have three or more terminals, and may also have both clips and bonding wires.

[0129] Alternatively, the wiring component can be mounted on an insulating substrate. In this case, the second sealing component can be omitted. Alternatively, instead of sealing using the second sealing component, one end of the wiring component and the semiconductor package can be sealed into a hollow state using an insulating substrate and a cap-like component.

[0130] Symbol Explanation

[0131] 1: Semiconductor device (first embodiment), 2: Semiconductor device (second embodiment), 3: Wiring component, 5: Semiconductor package (first embodiment), 6: Semiconductor package (second embodiment), 7: Second sealing component, 9: Connecting pin, 21: First metal plate, 22: Second metal plate, 23: Wiring metal plate, 30: Connector, 31: Clip, 32: Connecting wire, 40: Terminal, 50: Semiconductor element, 51: First electrode, 52: Second electrode, 60: Control IC, 70: Capacitor, 80: First sealing component, 90: Connecting component.

Claims

1. A semiconductor device, characterized by comprising: have: Multiple wiring components; and A semiconductor package, disposed on the wiring component, seals the semiconductor element by a first sealing component. The semiconductor package has a connector with one end located on the semiconductor element and engaged with the electrode of the semiconductor element. The other end of the connector is located directly above the wiring component.

2. The semiconductor device according to claim 1, characterized in that, The semiconductor package has a plurality of terminals on one side that expose the mating surface from the first sealing member, configured to bridge the different wiring components.

3. The semiconductor device according to claim 2, characterized in that, The semiconductor element has a first electrode on the surface of the wiring component side. The semiconductor package uses a first metal plate, which is bonded to the first electrode, as one of the terminals.

4. The semiconductor device according to claim 3, characterized in that, The semiconductor element has a second electrode on the side opposite to the wiring component. The semiconductor package uses the other end of the connector that is engaged with the second electrode as another terminal.

5. The semiconductor device according to claim 3, characterized in that, The semiconductor element has a second electrode on the side opposite to the wiring component. The semiconductor package has a second metal plate that serves as another terminal. The other end of the connector is engaged with the second metal plate.

6. The semiconductor device according to any one of Claims 1 to 5, wherein It also has: The second sealing component seals one end of the wiring component and the semiconductor package. The semiconductor package is disposed at one end of the wiring component. The other end of the wiring component is exposed from the second sealing component and arranged at a predetermined interval.

7. The semiconductor device according to claim 6, wherein have: Multiple semiconductor packages.

8. A method of manufacturing a semiconductor device, characterized by include: The wiring component preparation process involves fixing and preparing multiple wiring components. In the semiconductor package formation process, a semiconductor element having a first electrode and a second electrode on opposite sides is sealed with a first sealing member, forming a semiconductor package having a plurality of terminals with a bonding surface exposed from the first sealing member on one side. as well as In a configuration step, the surface having the terminals is positioned opposite the wiring component, thereby bridging the different wiring components by positioning the semiconductor package at one end of the wiring component. The semiconductor package has a first metal plate that is bonded to the first electrode and a connector that is located on the semiconductor element and bonded to the second electrode, with the other end of the first metal plate and the connector serving as the terminal.

9. A method for manufacturing a semiconductor device, characterized by include: The wiring component preparation process involves fixing and preparing multiple wiring components. In the semiconductor package formation process, a semiconductor element having a first electrode and a second electrode on opposite sides is sealed with a first sealing member, forming a semiconductor package having a plurality of terminals with a bonding surface exposed from the first sealing member on one side. as well as In a configuration step, the surface having the terminals is positioned opposite the wiring component, thereby bridging the different wiring components by positioning the semiconductor package at one end of the wiring component. The semiconductor package has: A first metal plate is bonded to the first electrode; A connector, one end of which is located on the semiconductor element and is engaged with the second electrode; as well as A second metal plate is engaged with the other end of the connector, with the first metal plate and the second metal plate serving as the terminal.

10. The method for manufacturing a semiconductor device according to claim 8 or 9, wherein Also includes: The sealing step involves sealing one end of the wiring component and the semiconductor package using a second sealing component.

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