A solar-type spark Mars probe

Abstract

This invention discloses a solar-type spark Mars detector. The detector includes a connection interface, a detector interface, an amplifier circuit, and the detector itself. The detector is connected to the detector interface, and the amplifier circuit is connected between the detector interface and the connection interface. The detector uses a photodiode D6 specifically designed for detecting near-infrared light with wavelengths of 1800-3800nm. This invention solves the problems caused by lighting, cameras, and sunlight, expanding its application scenarios. This invention operates in photovoltaic mode. Unlike photoconductive mode, the photodiode does not require an applied voltage and operates at zero bias (i.e., without an external voltage). It has no dark current (theoretically, there is no thermally generated carrier drift current when the bias is zero), resulting in low noise. It is suitable for detecting weak light signals, and the output is approximately logarithmically related to the light intensity (under the photovoltaic effect, the open-circuit voltage changes logarithmically with the light intensity).

Description

Technical Field

[0001] This invention discloses a detector, particularly a sunlight-type spark detector, which can be applied to technical fields such as fire spark detection, aircraft and automobile cabin spark detection, and ship and submarine ignition detection. Background Technology

[0002] Spark detection extinguishes fires in their early stages, far earlier than smoke detectors. However, current spark detection technology utilizes modern optoelectronic technology to create infrared detectors with special wavelengths. These detectors are then amplified by operational amplifiers and isolated by bandpass, resistor, and capacitor (BRC) microelectronics. The materials used in these special diodes are expensive, the packaging is costly, and the overall operating cost is high. Furthermore, they are easily affected by light, cameras, sunlight, etc., leading to false alarms, and thus can mostly only be used in dark environments. Summary of the Invention

[0003] To address the shortcomings of existing technologies in detecting Martian sparks, such as high cost and susceptibility to interference, this invention provides a sunlight-type spark Mars detector. It utilizes a photodiode specifically designed to detect near-infrared light with wavelengths of 1800-3800nm ​​as a detection device. Combined with peripheral circuitry, it can detect sparks and Martian sparks, eliminating the influence of lights, cameras, sunlight, etc.

[0004] The technical solution adopted by the present invention to solve its technical problem is: a solar-type spark Mars detector, the detector includes a connection interface, a detector interface, an amplifier circuit and a detector, the detector is connected to the detector interface, the amplifier circuit is connected between the detector interface and the connection interface, and the detector uses a photodiode D6 specifically for detecting near-infrared light with a wavelength of 1800-3800nm.

[0005] The technical solution adopted by the present invention to solve its technical problem further includes: One end of the photodiode D6 is directly connected to the terminal of the detector interface, and the other end of the photodiode D6 is grounded.

[0006] The amplifier circuit is connected to the terminals of the detector interface. The amplifier circuit includes a first amplifier U1 and a second amplifier U2. The terminals of the detector interface are connected to the inverting input terminal of the first operational amplifier in the first amplifier U1. The non-inverting input terminal of the first operational amplifier in the first amplifier U1 is grounded. The output terminal of the first operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the second operational amplifier in the first amplifier U1. The inverting input terminal of the second operational amplifier in the first amplifier U1 is grounded. The output terminal of the first operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the first operational amplifier in the second amplifier U2. The inverting input terminal of the first operational amplifier in the second amplifier U2 is grounded. The output terminal of the first operational amplifier in the second amplifier U2 is connected to the non-inverting input terminal of the second operational amplifier in the second amplifier U2. The inverting input terminal of the second operational amplifier in the second amplifier U2 is grounded. The output terminal of the second operational amplifier in the second amplifier U2 is connected to the gate of the MOS transistor Q1. The source of the MOS transistor Q1 is grounded. The drain of the MOS transistor Q1 is connected to the connection interface.

[0007] A first high-pass filter and a first low-pass filter are connected between the output terminal of the first operational amplifier in the first amplifier U1 and the non-inverting input terminal of the second operational amplifier in the first amplifier U1.

[0008] A second high-pass filter is connected between the first amplifier U1 and the second amplifier U2. The second high-pass filter is connected in series with a capacitor C15 and a resistor R5. The capacitor C15 and the resistor R5 are connected in series between the output terminal of the second operational amplifier in the first amplifier U1 and the non-inverting input terminal of the first operational amplifier in the second amplifier U2.

[0009] The connection interface adopts a 4P flange type male connector CJQ1, in which one terminal is used for inputting +24V power, one terminal is used for connecting an optocoupler, one terminal is used for connecting an amplifier circuit, and one terminal is used for grounding.

[0010] The detector interface adopts a 4P single-row straight pin interface, wherein one terminal (PA1) is used to connect to the positive power supply, one terminal (PA2) is used to ground (GND), one terminal (PA3) is used to connect to the detector, and one terminal (PA4) is used to connect to the optocoupler.

[0011] An optocoupler U3 is connected between the connection interface and the detector interface.

[0012] A voltage regulator module is connected to the connection interface.

[0013] The voltage regulator module has a filter capacitor C10 and a filter capacitor C4 connected in parallel between its input terminal and ground. The voltage regulator module also has a filter capacitor C1 and a filter capacitor C2 connected in parallel between its output terminal and ground. The voltage regulator V1 has a transient suppression diode D3 connected between its input terminal and ground.

[0014] The beneficial effects of this invention are: it solves the problems caused by lights, cameras, and sunlight, thus expanding its application scenarios. This invention operates in photovoltaic mode, which differs from photoconductor mode. The phototube does not require an applied voltage; the photodiode operates at zero bias (i.e., without an external voltage), resulting in no dark current (theoretically, there is no thermally generated carrier drift current when the bias is zero), lower noise, and suitability for detecting weak light signals. The output is approximately logarithmically related to the light intensity (under the photovoltaic effect, the open-circuit voltage changes logarithmically with the light intensity).

[0015] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. Attached Figure Description

[0016] Figure 1 This is a circuit block diagram of the present invention.

[0017] Figure 2 This is a circuit diagram of the connection interface section in this invention.

[0018] Figure 3 This is a circuit diagram of the voltage regulator module in this invention.

[0019] Figure 4 This is a schematic diagram of the circuit of the first amplifier and optocoupler in this invention.

[0020] Figure 5 This is a schematic diagram of the second amplifier section in this invention. Detailed Implementation

[0021] This embodiment is a preferred embodiment of the present invention. All other embodiments that are the same as or similar to this embodiment in principle and basic structure are within the protection scope of the present invention.

[0022] Please refer to the appendix for details. Figure 1 To be continued Figure 5 This invention protects a solar-type spark Mars detector, which mainly includes a connection interface, a detector interface, an amplifier circuit, and a detector. The detector is connected to the detector interface, and the amplifier circuit is connected between the detector interface and the connection interface. The amplifier circuit amplifies the detector's detection signal and then outputs it through the connection interface. The detector uses a photodiode specifically designed to detect near-infrared light with wavelengths of 1800-3800nm, which can eliminate the influence of lights, cameras, sunlight, etc.

[0023] This invention utilizes the "atmospheric window" and the "solar spectrum blind zone" to select a wavelength band that is invisible to the human eye and where the radiation energy of common environmental light sources (sun, incandescent lamps, LED lamps) is very weak, thus avoiding interference. The photodiode with a wavelength of 1800-3800nm ​​used in this invention is located in this advantageous range.

[0024] (1) Avoiding the influence of the solar spectrum: The radiation energy of sunlight on the ground is mainly concentrated in the visible light (400-700nm) and near-infrared (~1000nm) regions, where the intensity is very high. This invention utilizes the advantages of the mid- and far-infrared regions: As the wavelength exceeds 1500nm, especially above 2000nm, the radiation energy of sunlight decreases sharply. In the 1800-3800nm ​​band, the background noise of sunlight becomes very low. This is similar to how it is difficult to see stars during the day, but easy to do so with an infrared telescope of a specific wavelength. This invention precisely utilizes this band as the detection band, which can avoid the influence of the solar spectrum to the greatest extent.

[0025] (2) Avoiding the influence of artificial light: Common light sources such as incandescent / halogen lamps can radiate some near-infrared light (within ~2500nm), but the energy is very weak after 2000nm; LED lamps have a very narrow spectrum, usually concentrated in the visible light region and a small amount of near-infrared light (<1100nm), and hardly radiate the mid- and far-infrared bands. This invention uses the 1800-3800nm ​​band as the detection band, which can avoid the influence of artificial light to the greatest extent.

[0026] (3) Avoiding camera interference: The photosensitive material of ordinary CMOS / CCD image sensors is silicon, whose cutoff wavelength is about 1100nm. This means that light with a wavelength greater than 1100nm is beyond the limit of silicon-based cameras, and silicon cameras are completely "invisible" and cannot form images. Therefore, this invention utilizes light signals of 1800-3800nm, which are invisible to all silicon-based surveillance cameras, mobile phone cameras, dashcams, etc., ensuring the privacy of communication or detection and placing them in an absolutely secure zone.

[0027] In summary, the photoelectric system of this invention, operating in the 1800-3800nm ​​range, is naturally immune to interference from most indoor and outdoor lighting.

[0028] In this embodiment, the connection interface adopts a 4P flange type male connector CJQ1 for connection with control equipment. One terminal is used for inputting +24V power, one terminal is used for connecting optocoupler U3, one terminal is used for connecting amplifier circuit, and one terminal is used for grounding. In specific implementation, the connection interface can also adopt other forms.

[0029] In this embodiment, the detector interface adopts a 4P single-row straight pin interface, wherein one terminal (PA1) is used to connect to the positive power supply (VC1), one terminal (PA2) is used to ground (GND), one terminal (PA3) is used to connect to the detector, and one terminal (PA4) is used to connect to the optocoupler U3. In specific implementation, the connection interface can also adopt other forms.

[0030] In this embodiment, the detector uses a photodiode D6 specifically designed to detect near-infrared light with wavelengths of 1800-3800nm. In this embodiment, the photodiode with model number XL-L3-1838-TO46W manufactured by Shenzhen Xilan Optoelectronics Co., Ltd. is selected.

[0031] In this embodiment, one end of photodiode D6 is directly connected to terminal PA3 of the detector interface, and the other end is grounded. Photodiode D6 is specifically designed to detect near-infrared light with wavelengths of 1800-3800nm. Operating in photovoltaic mode, unlike photoconductive mode, photodiode D6 does not require an applied voltage and operates at zero bias (i.e., without an external voltage). When light irradiates the PN junction, photon energy excites electron-hole pairs. Under the influence of the built-in electric field, charge carriers separate, generating a voltage across photodiode D6 (i.e., photogenerated voltage). At this time, photodiode D6 acts as a miniature power supply. Connecting it to a high-input-impedance amplifier (such as an operational amplifier) ​​with a relatively large load resistance, and then through bandpass isolation circuitry, the required signal is transmitted to drive the controller to generate pulse alarm signals, etc. In this embodiment, photodiode D6 needs to collect spark and fire signals, and is typically exposed or placed close to transparent glass to prevent obstruction.

[0032] In this embodiment, the amplifier circuit is connected to the PA3 terminal of the detector interface. The amplifier circuit includes a first amplifier U1 and a second amplifier U2. The first amplifier U1 and the second amplifier U2 are low-power dual operational amplifiers (dual op-amps) of model TLC27L2IDR. The PA3 terminal of the detector interface is connected to the inverting input terminal of the first operational amplifier in the first amplifier U1. The non-inverting input terminal of the first operational amplifier in the first amplifier U1 is grounded. The output terminal of the first operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the second operational amplifier in the first amplifier U1. The inverting input terminal of the second operational amplifier in the first amplifier U1 is grounded. The output terminal of the second operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the first operational amplifier in the second amplifier U2. The inverting input terminal of the first operational amplifier in the second amplifier U2 is grounded. The output terminal of the first operational amplifier in the second amplifier U2 is connected to the non-inverting input terminal of the second operational amplifier in the second amplifier U2. The inverting input terminal of the second operational amplifier in the second amplifier U2 is grounded. The output terminal of the second operational amplifier in the second amplifier U2 is connected to the gate of the MOSFET Q1. The source of the MOSFET Q1 is grounded. The drain of the MOSFET Q1 is connected to pin 2 of the 4P flange connector CJQ1. This connection is used to output the amplified detection signal, which is transmitted to the control system through the 4P flange connector CJQ1. Spark and spark detection both generate pulse waves. When the detection signal of photodiode D6 is amplified by the first amplifier U1 and the second amplifier U2, it drives MOSFET Q1 to conduct. MOSFET Q1 will instantly pull the level of pin 2 of 4P flange connector CJQ1 low, thereby determining that a spark or spark has appeared.

[0033] In this embodiment, a first high-pass filter and a first low-pass filter are connected between the output terminal of the first operational amplifier in the first amplifier U1 and the non-inverting input terminal of the second operational amplifier in the first amplifier U1. Bandpass filtering can be achieved through the first high-pass filter and the first low-pass filter. In this embodiment, the first high-pass filter includes a capacitor C7 and a resistor R4 connected in series between the output terminal of the first operational amplifier in the first amplifier U1 and the non-inverting input terminal of the second operational amplifier in the first amplifier U1. The first low-pass filter includes a capacitor C8 and a resistor R6 connected in parallel. One end of the parallel capacitor C8 and resistor R6 is connected to the non-inverting input terminal of the second operational amplifier in the first amplifier U1, and the other end is grounded.

[0034] In this embodiment, a second high-pass filter is connected between the first amplifier U1 and the second amplifier U2. The second high-pass filter is connected in series with a capacitor C15 and a resistor R5. The capacitor C15 and the resistor R5 are connected in series between the output terminal of the second operational amplifier in the first amplifier U1 and the non-inverting input terminal of the first operational amplifier in the second amplifier U2. The high-pass filter can achieve the effect of high-pass filtering again.

[0035] In this embodiment, the output terminal of the second operational amplifier in the second amplifier U2 is connected to a second low-pass filter. The second low-pass filter includes a capacitor C14 and a resistor R18 connected in parallel. One end of the capacitor C14 and the resistor R18 connected in parallel is connected to the gate of the MOS transistor Q1, and the other end is grounded. The effect of low-pass filtering can be achieved again through the second low-pass filter.

[0036] In this invention, the effect of bandpass filtering can be achieved by combining two high-pass filters and two low-pass filters.

[0037] In this embodiment, an optocoupler U3 is connected between the connection interface and the detector interface. The light-emitting diode of the optocoupler U3 is connected between pin 3 of the 4P flange connector CJQ1 and the positive power supply (VC1). The phototransistor of the optocoupler U3 is connected to terminal PA4 of the 4P single-row straight pin connector. The optocoupler U3 can be used to detect whether the invention is good or bad. During detection, a signal is output from the connection interface, and the signal at terminal PA4 of the 4P single-row straight pin connector is detected to determine whether it is good or bad. In specific implementations, the optocoupler U3 may not be provided.

[0038] In this embodiment, a voltage regulator module is connected to the connection interface. The voltage regulator module is a 12V fixed output three-terminal regulator V1 with model number L78M12CDT-TR. The input terminal of the regulator V1 is connected to pin 4 of the 4P flange male connector CJQ1 for power input (in this embodiment, the input power is +24V). The voltage is regulated to +12V output by the regulator V1, and the voltage regulator module supplies power to the amplifier circuit.

[0039] In this embodiment, filter capacitors C10 and C4 are connected in parallel between the input terminal of voltage regulator V1 and ground, filter capacitors C1 and C2 are connected in parallel between the output terminal of voltage regulator V1 and ground, and transient suppression diode D3 is connected between the input terminal of voltage regulator V1 and ground, which can be used for lightning protection and surge protection.

[0040] This invention solves the problems caused by lights, cameras, and sunlight, expanding its application scenarios. Operating in photovoltaic mode, unlike the photoconductor mode, the photodiode does not require an applied voltage and operates at zero bias (i.e., without an external voltage). It has no dark current (theoretically, there is no thermally generated carrier drift current when the bias is zero), resulting in lower noise. This makes it suitable for detecting weak light signals, and the output is approximately logarithmically related to the light intensity (under the photovoltaic effect, the open-circuit voltage changes logarithmically with the light intensity).

Claims

1. A solar-type spark Mars probe, characterized by: The detector includes a connection interface, a detector interface, an amplifier circuit, and a detector. The detector is connected to the detector interface, and the amplifier circuit is connected between the detector interface and the connection interface. The detector uses a photodiode D6 specifically designed to detect near-infrared light with wavelengths of 1800-3800nm.

2. The sunburst-type spark Mars probe according to claim 1, characterized in that: One end of the photodiode D6 is directly connected to the terminal of the detector interface, and the other end of the photodiode D6 is grounded.

3. The sunburst-type spark Mars probe according to claim 1, characterized in that: The amplifier circuit is connected to the terminals of the detector interface. The amplifier circuit includes a first amplifier U1 and a second amplifier U2. The terminals of the detector interface are connected to the inverting input terminal of the first operational amplifier in the first amplifier U1. The non-inverting input terminal of the first operational amplifier in the first amplifier U1 is grounded. The output terminal of the first operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the second operational amplifier in the first amplifier U1. The inverting input terminal of the second operational amplifier in the first amplifier U1 is grounded. The output terminal of the first operational amplifier in the first amplifier U1 is connected to the non-inverting input terminal of the first operational amplifier in the second amplifier U2. The inverting input terminal of the first operational amplifier in the second amplifier U2 is grounded. The output terminal of the first operational amplifier in the second amplifier U2 is connected to the non-inverting input terminal of the second operational amplifier in the second amplifier U2. The inverting input terminal of the second operational amplifier in the second amplifier U2 is grounded. The output terminal of the second operational amplifier in the second amplifier U2 is connected to the gate of the MOS transistor Q1. The source of the MOS transistor Q1 is grounded. The drain of the MOS transistor Q1 is connected to the connection interface.

4. The sunburst-type spark Mars probe according to claim 3, characterized in that: A first high-pass filter and a first low-pass filter are connected between the output terminal of the first operational amplifier in the first amplifier U1 and the non-inverting input terminal of the second operational amplifier in the first amplifier U1.

5. The sunburst-type spark Mars probe according to claim 3, characterized in that: A second high-pass filter is connected between the first amplifier U1 and the second amplifier U2. The second high-pass filter is connected in series with a capacitor C15 and a resistor R5. The capacitor C15 and the resistor R5 are connected in series between the output terminal of the second operational amplifier in the first amplifier U1 and the non-inverting input terminal of the first operational amplifier in the second amplifier U2.

6. The sunburst-type spark Mars probe according to claim 1, characterized in that: The connection interface adopts a 4P flange type male connector CJQ1, in which one terminal is used for inputting +24V power, one terminal is used for connecting an optocoupler, one terminal is used for connecting an amplifier circuit, and one terminal is used for grounding.

7. The sunburst-type spark Mars probe according to claim 1, characterized in that: The detector interface adopts a 4P single-row straight pin interface, wherein one terminal (PA1) is used to connect to the positive power supply, one terminal (PA2) is used to ground (GND), one terminal (PA3) is used to connect to the detector, and one terminal (PA4) is used to connect to the optocoupler.

8. The sunburst-type spark Mars probe according to claim 1, characterized in that: An optocoupler U3 is connected between the connection interface and the detector interface.

9. The sunburst-type spark Mars probe according to claim 1, characterized in that: A voltage regulator module is connected to the connection interface.

10. The sunburst-type spark Mars probe according to claim 1, characterized in that: The voltage regulator module has a filter capacitor C10 and a filter capacitor C4 connected in parallel between its input terminal and ground. The voltage regulator module also has a filter capacitor C1 and a filter capacitor C2 connected in parallel between its output terminal and ground. The voltage regulator V1 has a transient suppression diode D3 connected between its input terminal and ground.

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