Gas circulation intelligent temperature control algorithm and control method
By employing three-level temperature graded control and local hot spot adjustment technology, the problems of power consumption waste, shortened lifespan, and control lag in the heat dissipation system of three-dimensional stacked chips are solved, achieving efficient dynamic thermal management.
Patent Information
- Application Number
- CN202610788676.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2026-06-03
- Publication Date
- 2026-08-25
AI Technical Summary
Existing three-dimensional stacked chip heat dissipation systems suffer from problems such as severe power waste, shortened lifespan, inability to handle local hot spots, and control lag in dynamic thermal management. In particular, there is a lack of effective intelligent temperature control methods for gas circulation heat dissipation systems.
A three-level temperature graded control strategy is adopted, combined with a local hot spot dynamic adjustment mechanism. Through low-frequency intermittent, constant cycle and high-frequency strong cycle driving modes, the phase difference and vibration amplitude are adjusted by dual piezoelectric oscillators to achieve adaptive matching between heat dissipation intensity and chip thermal load.
It significantly reduces heat dissipation and power consumption under light load conditions, improves temperature uniformity and response speed, extends service life, and is compatible with existing hardware structures.
Smart Images

Figure CN122632927A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of intelligent thermal management technology for chips, specifically relating to an intelligent temperature control algorithm and method for a three-dimensional stacked chip heat dissipation system with external annular air cavity circulation, applicable to dynamic thermal management scenarios of high-density chips such as mobile terminals, AI chips, servers, and automotive electronics. Background Technology
[0002] As the computing density of 3D stacked chips continues to increase, the thermal load of these chips exhibits characteristics of large dynamic changes and concentrated local hot spots. Traditional cooling systems mostly operate at full speed, meaning the cooling components always work at maximum power regardless of the chip load, which has the following fatal flaws: First, there is significant power wastage. Even when the chip is lightly loaded or idle, the cooling system continues to run at full speed, resulting in over 80% of power being wasted, which severely shortens the battery life of mobile devices.
[0003] Second, their lifespan decreases rapidly. Long-term continuous high-frequency operation of drive components such as piezoelectric oscillators accelerates material fatigue, resulting in a lifespan reduction of more than 30%.
[0004] Third, it cannot handle dynamic hot spots. Traditional temperature control methods only adjust the overall temperature based on the core temperature of the chip, and cannot accurately dissipate heat from local hot spots inside the chip, leading to excessively high local temperatures and causing the chip to reduce its frequency.
[0005] Fourth, existing intelligent temperature control algorithms are designed for traditional heat dissipation systems such as liquid cooling and air cooling, without taking into account the low inertia and fast response characteristics of gas circulation heat dissipation systems, resulting in serious control lag and large temperature fluctuations.
[0006] For example, a Chinese patent discloses a smart heat dissipation method for chips, but this method can only adjust the fan speed and cannot be applied to gas circulation heat dissipation systems; a Chinese patent discloses a piezoelectric pump temperature control method, but this method only uses a single proportional-integral-derivative (PID) regulation, without a hierarchical control strategy, resulting in high power consumption and slow response speed.
[0007] Therefore, there is an urgent need for an intelligent temperature control method specifically for dual piezoelectric oscillator gas circulation heat dissipation systems, which can dynamically adjust the heat dissipation intensity according to the chip load to achieve the optimal balance between heat dissipation efficiency and power consumption. Summary of the Invention
[0008] The purpose of this invention is to overcome the above-mentioned defects of the prior art and provide a chip intelligent temperature control method based on dual piezoelectric oscillator gas circulation. Through a three-level temperature graded control strategy combined with a local hot spot dynamic adjustment mechanism, the heat dissipation intensity and chip thermal load are adaptively matched.
[0009] To achieve the above objectives, the present invention adopts the following technical solution: A chip intelligent temperature control method based on dual piezoelectric oscillator gas circulation, which collects the chip core temperature and local temperature in real time, divides the temperature into three intervals: low temperature, medium temperature and high temperature, and adopts three driving modes: low frequency intermittent, constant cycle and high frequency strong cycle, respectively, and dynamically adjusts the phase difference and vibration amplitude of the piezoelectric oscillator according to the local temperature difference to eliminate local hot spots.
[0010] The core working principle of this invention is as follows: Low temperature range: The chip has a low thermal load, and natural heat dissipation can meet most of the requirements. It adopts an intermittent drive mode, and heat dissipation is only activated when the temperature approaches the threshold, which greatly reduces the ineffective power consumption. Mid-temperature range: The chip is under normal load and driven by a constant frequency to maintain stable gas circulation and ensure temperature uniformity; High temperature range: The chip is under full load, driven at the highest frequency, and provides maximum heat dissipation to prevent the chip from overheating and reducing its frequency. Hotspot regulation: By fine-tuning the phase difference and amplitude of the piezoelectric oscillator, the gas velocity distribution within the annular gas cavity is altered, enhancing the gas exchange efficiency in the hotspot area and achieving precise heat dissipation. The phase difference adjustment is consistently fine-tuned within the hardware-allowed range of 180°±30°, optimizing local flow velocity while ensuring unidirectional circulation stability.
[0011] The key innovations of this invention include: For the first time, a three-stage temperature control strategy for a dual piezoelectric oscillator gas circulation system is proposed, which perfectly matches the low inertia characteristics of gas circulation and has a response speed that is more than 50% faster than the traditional PID algorithm. The pioneering phase difference dynamic adjustment hotspot elimination technology achieves precise local heat dissipation without the need for additional hardware, simply by adjusting the drive signal, improving temperature uniformity by more than 35%. The idle sleep mode further reduces standby power consumption, and the overall heat dissipation power consumption is reduced by more than 70% under light load conditions; It is fully compatible with existing dual piezoelectric vibrator driver hardware, requiring no modification to the circuit structure and can be implemented simply through software upgrades. Attached Figure Description
[0012] Figure 1 This is a schematic diagram of the overall structure of the present invention applied to a three-dimensional stacked chip heat dissipation system; Figure 2 This is a schematic diagram of the individual structure of the air circulation drive component of the present invention; Explanation of reference numerals in the attached figures: 1-Annular sealed gas cavity; 2-Gas circulation drive component (piezoelectric vibrator); 3-Miniature insulating support column; 4-Vertical microporous thermal conductive array; 5-Cuboid three-dimensional stacked chip body; 6-Five-sided integrated heat dissipation layer; 7-Chip interlayer interface; The arrow direction indicates the direction of high-pressure inert gas circulation flow. Detailed Implementation
[0013] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments. Example 1 (Mobile Terminal Chip Scenario)
[0014] This embodiment is applied to the heat dissipation system of a 4-layer 7nm process three-dimensional stacked chip for smartphones. The chip size is 10×10×0.5mm and it is driven by two piezoelectric oscillators.
[0015] Temperature threshold settings: Low temperature range ≤45℃, medium temperature range 45~65℃, high temperature range ≥65℃.
[0016] Control strategy: When the chip core temperature is ≤45℃, a low-frequency intermittent drive mode is adopted, with a drive frequency of 15kHz, a duty cycle of 20% (running for 2 seconds and stopping for 8 seconds), and an overall power consumption of 0.1mW. When the core temperature is between 45 and 65°C, a constant cycle drive mode is adopted, the drive frequency is 50kHz, and it runs continuously with an overall power consumption of 0.5mW. When the core temperature is ≥65℃, a high-frequency strong cycle drive mode is adopted, with a drive frequency of 100kHz, and continuous operation with an overall power consumption of 0.8mW. When a local temperature difference exceeding 5°C is detected, the phase difference of the piezoelectric oscillator is adjusted from 180° to 170°, and the vibration amplitude is increased from 2μm to 3μm to enhance gas circulation in the hot spot area.
[0017] Tests showed that under light load conditions, the average power consumption of the heat dissipation system in this embodiment is 0.15mW, which is 70% lower than the traditional full-speed operation mode; the temperature difference across the entire chip is controlled within 3℃, and the temperature uniformity is improved by 35%. Example 2 (Server Chip Scenario)
[0018] This embodiment is applied to a heat dissipation system for a 6-layer 7nm process high-power server chip in a data center. The chip size is 20×20×0.8mm and it is driven by 4 piezoelectric oscillators.
[0019] Temperature threshold settings: Low temperature range ≤50℃, medium temperature range 50~75℃, high temperature range ≥75℃.
[0020] Control strategy: Low temperature range: drive frequency 20kHz, duty cycle 30%, overall power consumption 0.6mW; Mid-temperature range: Drive frequency 80kHz, continuous operation, overall power consumption 1.6mW; High temperature range: Drive frequency 150kHz, continuous operation, overall power consumption 1.8mW; When the local temperature difference exceeds 6°C, the phase difference is adjusted to 165°, and the vibration amplitude is increased by 40%. The above power consumption is the measured maximum value after software optimization, which meets the upper limit requirement of less than 2mW for the 4-oscillator scheme in the hardware patent.
[0021] Tests have shown that this embodiment can keep the server chip's full-load operating temperature stable below 85°C, and reduce the annual energy consumption of the heat dissipation system by more than 40%. Example 3 (Vehicle Electronics Scenario)
[0022] This embodiment is applied to the heat dissipation system of an in-vehicle autonomous driving chip, with an operating ambient temperature range of -40℃ to 85℃.
[0023] Temperature threshold settings: Low temperature range ≤40℃, medium temperature range 40~70℃, high temperature range ≥70℃.
[0024] Control strategy: When the ambient temperature is below 0℃, the heat dissipation system is automatically shut down, and the chip maintains its operating temperature by generating heat itself. When the ambient temperature is between 0 and 40℃, the normal three-level temperature control strategy is adopted. When the ambient temperature is above 40℃, all drive frequencies are increased by 10% to enhance heat dissipation.
[0025] This embodiment can operate stably in extreme temperature environments, meeting the stringent reliability requirements of automotive electronics. Beneficial effects
[0026] Compared with the prior art, the present invention has the following significant advantages: Significantly reduced power consumption: Under light load conditions, heat dissipation power consumption is reduced by more than 70%, and power consumption is close to 0 in idle sleep mode, significantly extending the battery life of mobile terminals. Improved temperature uniformity: Through phase difference dynamic adjustment technology, the temperature difference across the entire chip is controlled within 3℃, completely eliminating local hot spots and avoiding chip frequency reduction; Extended service life: Reduces the continuous operating time of the piezoelectric vibrator, extending the service life of the drive components by more than 50%; Fast response speed: The hierarchical control strategy perfectly matches the low inertia characteristics of gas circulation, and the temperature response speed is more than 50% faster than the traditional PID algorithm; High compatibility: No hardware modifications are required; it can be applied to existing dual piezoelectric oscillator gas circulation cooling systems simply through software upgrades.
[0027] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.
Claims
1. A chip intelligent temperature control method based on dual piezoelectric oscillator gas circulation, characterized in that, Includes the following steps: (1) Real-time acquisition of the core temperature of the cuboid three-dimensional stacked chip body (5) and the local temperature of each layer of the chip; (2) The collected core temperature is divided into three continuous control intervals: low temperature interval, medium temperature interval and high temperature interval; (3) Based on the current temperature range, output a corresponding driving signal to the air circulation drive component (2), wherein the air circulation drive component (2) includes at least two symmetrically arranged piezoelectric oscillators (2): When the temperature is in the low temperature range, a low-frequency intermittent drive mode is adopted, and the piezoelectric oscillator (2) is periodically started and stopped at the first frequency; When the temperature is in the medium temperature range, a constant cycle drive mode is adopted, and the piezoelectric oscillator (2) runs continuously at the second frequency; When the temperature is in the high temperature range, a high frequency strong cycle drive mode is adopted, and the piezoelectric oscillator (2) runs continuously at the third frequency; (4) Real-time detection of local temperature difference in each layer of the chip. When the local temperature difference exceeds the preset threshold, the phase difference and vibration amplitude of the two sets of symmetrical piezoelectric oscillators (2) are dynamically adjusted to enhance the gas circulation intensity in the local area and eliminate local hot spots. (5) Repeat steps (1) to (4) to maintain the chip temperature stable within the preset range.
2. The temperature control method according to claim 1, characterized in that, The low temperature range is ≤45℃, the medium temperature range is 45℃~65℃, and the high temperature range is ≥65℃; the first frequency is 10~20kHz, the second frequency is 30~60kHz, and the third frequency is 70~200kHz.
3. The temperature control method according to claim 1, characterized in that, The duty cycle of the low-frequency intermittent drive mode is 10%~30%, that is, the piezoelectric oscillator (2) runs for 1~3 seconds and then stops for 7~9 seconds, repeating the cycle.
4. The temperature control method according to claim 1, characterized in that, The phase difference adjustment range mentioned in step (4) is 150°~210°, and the vibration amplitude adjustment range is 0.5~10μm; when the local temperature difference exceeds 5°, the phase difference is adjusted to 160°~170° or 190°~200°, and the vibration amplitude is increased by 20%~50%.
5. The temperature control method according to claim 1, characterized in that, When the chip is detected to be unloaded and the core temperature is below 35°C, it automatically enters sleep mode and the air circulation drive component (2) completely stops running; when the core temperature rises to 40°C, it automatically wakes up and enters the low temperature range drive mode.
6. The temperature control method according to claim 1, characterized in that, The driving signal simultaneously adjusts the operating parameters of the two symmetrical piezoelectric oscillators (2), and always maintains a phase difference of 180°±30° between the driving signals of the two sets of oscillators.
7. The temperature control method according to claim 1, characterized in that, The core temperature of the chip is collected by a diode temperature sensor integrated inside the chip, and the local temperature is collected by a miniature temperature sensor distributed on the inner wall of the vertical micro-hole thermal array (4).
8. A control system for the temperature control method as described in any one of claims 1 to 7, characterized in that, include: The temperature acquisition module is used to collect the core temperature of the chip and the local temperature of each layer in real time. The interval determination module is used to compare the collected temperature with a preset threshold to determine the current control interval; The drive control module is used to output the corresponding drive signal to the air circulation drive component (2) according to the current control range; The hot spot adjustment module is used to dynamically adjust the phase difference and vibration amplitude of the piezoelectric vibrator (2) according to the local temperature difference.