Semiconductor packaging structure

Abstract

The utility model relates to the technical field of semiconductor packaging, in particular to a semiconductor packaging structure, which comprises a substrate, a first packaging structure and an inductor, the first packaging structure is arranged on the first surface of the substrate, and a copper core ball structure is arranged in the first packaging structure; the surface of the copper-core ball structure is provided with a first bonding pad structure; the inductor is electrically connected with the copper core ball structure through the first bonding pad structure. The copper core ball structure is in good contact with other electronic devices, so that the stability of the semiconductor packaging structure is enhanced; meanwhile, only the copper core ball structure needs to be adopted at the electric connection position, so that the waste of materials is avoided. Moreover, the core of the copper-core ball is copper, so that the stability of the packaging structure can be well maintained in the reflow soldering process; the packaging structure supported by the copper core ball structure has more space for accommodating other electronic parts, so that a thinner and higher-density semiconductor packaging structure can be realized, and the cost of the semiconductor packaging structure can be effectively reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor packaging, in particular to a semiconductor packaging structure. Background Art

[0002] SiP (System in Package) is an advanced packaging technology that integrates multiple electronic devices into a packaging structure to achieve high integration and high performance.

[0003] With the continuous development of semiconductor technology, electronic products are constantly developing towards lightweight and slim. At present, in the packaging structure of traditional semiconductor manufacturing technology, the wiring method of the metal copper layer is used to electrically connect the inductor to the wafer-level packaging structure, resulting in a high thickness of the formed semiconductor packaging structure, and the low adhesion of the metal copper layer to the plastic packaging material will lead to the delamination of the semiconductor packaging structure, which will also lead to unstable device performance. Therefore, the semiconductor packaging structure formed by the traditional wiring method of the metal copper layer can no longer meet the requirements of miniaturization of electronic products, and there are also hidden dangers to the stability of the device. Utility Model Content

[0004] The utility model aims to solve the problems of large thickness and unstable performance of a traditional semiconductor packaging structure, and provides a semiconductor packaging structure.

[0005] In order to achieve the above-mentioned object, an embodiment of the utility model provides a semiconductor packaging structure, including:

[0006] A substrate, a first packaging structure, and an inductor;

[0007] The substrate comprises a first surface and a second surface opposite to the first surface, and the first packaging structure comprises a first surface and a second surface opposite to the first surface;

[0008] The first packaging structure is disposed on the first surface of the substrate, and the second surface of the first packaging structure is disposed opposite to the first surface of the substrate;

[0009] The first package structure includes at least one semiconductor chip and a copper core ball structure, wherein the copper core ball structure penetrates the first package structure and includes a copper core ball, a first pad structure located on one side of the copper core ball and on a first surface of the first package structure, and a second pad structure located on the other side of the copper core ball and on a second surface of the first package structure;

[0010] The inductor is arranged on the surface of the first pad structure, and is electrically connected to the semiconductor chip of the first packaging structure through the copper core ball structure and the substrate.

[0011] Optionally, the copper core ball is a copper core-tin shell structure or is a copper core, a nickel layer and a tin shell structure from the inside to the outside.

[0012] Optionally, the material of the first pad structure is one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver; the material of the second pad structure is one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0013] Optionally, the first packaging structure includes a plurality of semiconductor chips, and at least one of the semiconductor chips is electrically connected to the inductor.

[0014] Optionally, the semiconductor chip is a chip or a bare chip with a packaging structure, wherein the chip with a packaging structure includes a 2.5D packaged multi-layer chip, a 3D packaged multi-layer chip, or a single-layer packaged chip.

[0015] Optionally, the semiconductor chip includes a signal processing chip, a logic control chip, a storage chip, a sensor chip, a power chip or a radio frequency chip.

[0016] Optionally, the first packaging structure further includes at least one passive component, and a functional surface of at least one of the passive components is electrically connected to the first surface of the substrate.

[0017] Optionally, the passive components include one or more of resistors, capacitors, and inductors.

[0018] Optionally, a surface of the first pad structure protrudes from a first surface of the first packaging structure.

[0019] Optionally, the first packaging structure includes a packaging structure of the copper core ball structure, at least one semiconductor chip and a molding compound.

[0020] The beneficial effects of the utility model are:

[0021] The utility model provides a semiconductor packaging structure, comprising: a substrate, a first packaging structure, and an inductor; the substrate comprises a first surface and a second surface opposite to the first surface, and the first packaging structure comprises a first surface and a second surface opposite to the first surface; the first packaging structure is arranged on the first surface of the substrate, and the second surface of the first packaging structure is arranged opposite to the first surface of the substrate; the first packaging structure comprises at least one semiconductor chip and a copper core ball structure, the copper core ball structure penetrates the first packaging structure and the copper core ball structure comprises a copper core ball, a first pad structure located on one side of the copper core ball and on the first surface of the first packaging structure, and a second pad structure located on the other side of the copper core ball and on the second surface of the first packaging structure; the inductor is arranged on the surface of the first pad structure, and is electrically connected to the semiconductor chip in the first packaging structure through the copper core ball structure and the substrate.

[0022] The tin shell of the copper core ball is the effective welding part of the copper core ball, so that the formed copper core ball structure has good connection performance with the device, and the metal copper layer does not need to be directly attached to the surface of the plastic packaging material, avoiding the delamination phenomenon of the metal copper layer and the plastic packaging material caused by using the copper layer as a connecting material in the traditional process, thereby enhancing the stability of the semiconductor packaging structure; at the same time, the copper core ball structure only needs to be used at the electrical connection position, saving a whole layer of copper and avoiding the waste of copper material caused by using the copper layer as a connecting material.

[0023] Furthermore, the core of the copper core ball is copper, and metallic copper has a high melting point. During the reflow process, the copper core of the copper core ball 201 will not undergo unacceptable deformation, and the stability of the packaging structure can be well maintained; and the space occupied by the copper layer is saved. The packaging structure supported by the copper core ball has more space to accommodate other electronic parts, which is conducive to achieving a thinner and higher density semiconductor packaging structure, and can also effectively reduce the cost of the semiconductor packaging structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 is a schematic diagram of a conventional semiconductor packaging structure;

[0025] Figure 2 A schematic diagram of a semiconductor packaging structure provided by an embodiment of the utility model;

[0026] Figure 3~Figure 9 A schematic diagram of a preparation process of a semiconductor packaging structure provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0027] like Figure 1As shown, it is a traditional semiconductor packaging structure, using a copper layer 4 as a material for electrically connecting the inductor 3 and the substrate 1. The metal copper layer 4 is formed on the surface of the plastic packaging layer 2. Due to the low adhesion between the metal copper layer 4 and the plastic packaging material, the metal copper layer 4 and the plastic packaging material are delaminated, and a whole layer of copper is only used as an interconnection material between the inductor 3 and the substrate 1, resulting in a waste of most of the metal copper, and the copper occupies a whole layer of space, making it difficult for the semiconductor packaging structure to form a thinner structure. In order to solve the above problems, the utility model provides a semiconductor packaging structure.

[0028] In order to make the purpose, technical solution and advantages of the utility model clearer, the technical solution of the utility model will be clearly and completely described below in combination with the specific implementation methods of the utility model and the corresponding drawings. Obviously, the described implementation methods are only part of the implementation methods of the utility model, not all of the implementation methods. Based on the implementation methods in the utility model, all other implementation methods obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model.

[0029] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0030] The utility model provides a semiconductor packaging structure, such as Figure 2 As shown, including:

[0031] Substrate 10, first packaging structure 20, inductor 30;

[0032] The substrate 10 includes a first surface and a second surface opposite to the first surface, and the first packaging structure 20 includes a first surface and a second surface opposite to the first surface;

[0033] The first packaging structure 20 is disposed on the first surface of the substrate 10, and the second surface of the first packaging structure 20 is disposed opposite to the first surface of the substrate 10;

[0034] The first package structure 20 includes at least one semiconductor chip 203 and a copper core ball structure 40, wherein the copper core ball structure 40 penetrates the first package structure 20 and includes a copper core ball 201, a first pad structure 401 located on one side of the copper core ball 201 and located on a first surface of the first package structure, and a second pad structure 402 located on the other side of the copper core ball 201 and located on a second surface of the first package structure 20;

[0035] The inductor 30 is disposed on the surface of the first pad structure 401 , and is electrically connected to the semiconductor chip 203 of the first packaging structure through the copper core ball structure 40 and the substrate 10 .

[0036] In this embodiment, the substrate 10 is a single-layer board or a multi-layer board.

[0037] The substrate 10 is one of a resin substrate, a ceramic substrate, a glass substrate, a silicon substrate, a printed circuit board (PCB) or a flexible circuit board (FPC).

[0038] In this embodiment, the substrate 10 has connecting circuits.

[0039] In this embodiment, the material of the connecting line is metal, specifically, it can be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0040] In this embodiment, the copper core ball 201 (CCSB) is a copper core-tin shell structure.

[0041] In other embodiments, the copper core ball is composed of a copper core, a nickel layer, and a tin shell structure from the inside to the outside, or other suitable metal core-shell structures.

[0042] The tin shell of the copper core ball 201 is an effective welding part of the copper core ball 201, so that the formed copper core ball structure 40 has good connection performance with the device. The metal copper does not need to be directly attached to the surface of the plastic packaging material, avoiding the stratification phenomenon of the metal copper layer and the plastic packaging material caused by using the copper layer as the connecting material in the traditional process, thereby enhancing the stability of the semiconductor packaging structure; at the same time, the copper core ball structure 40 only needs to be used at the electrical connection position, avoiding the waste of copper material caused by using a whole layer of copper as the connecting material in the traditional process.

[0043] Furthermore, the core of the copper core ball 201 is copper, and metallic copper has a high melting point. During the reflow process, the copper core of the copper core ball 201 will not undergo unacceptable deformation, and the stability of the semiconductor packaging structure can be well maintained; and the space occupied by the copper layer is saved. The semiconductor packaging structure supported by the copper core ball structure 40 formed by the copper core ball 201 has more space to accommodate other electronic parts, which is conducive to achieving a thinner and higher density packaging structure, and can also effectively reduce the cost of the semiconductor packaging structure.

[0044] In this embodiment, a semiconductor chip 203 is included in the first packaging structure 20 , and a functional surface of the semiconductor chip 203 is electrically connected to the first surface of the substrate 10 .

[0045] In other embodiments, the first packaging structure 20 has a plurality of semiconductor chips 203 therein, and a functional surface of at least one of the semiconductor chips 203 is electrically connected to the first surface of the substrate 10 .

[0046] In this embodiment, the semiconductor chip is a chip or a bare chip with a packaging structure, wherein the chip with a packaging structure includes a 2.5D packaged multi-layer chip, a 3D packaged multi-layer chip, or a single-layer packaged chip.

[0047] In this embodiment, the semiconductor chip 203 includes but is not limited to a signal processing chip, a logic control chip, a storage chip, a sensor chip, a power chip or a radio frequency chip.

[0048] In this embodiment, the height of the copper core ball structure 40 is greater than the height of the semiconductor chip 203 .

[0049] In this embodiment, the first packaging structure 20 further includes: a third pad structure 204 , and the third pad structure 204 is disposed on the first surface of the substrate 10 .

[0050] In this embodiment, the material of the third pad structure 204 is metal, and specifically may be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0051] In this embodiment, the first packaging structure 20 further includes: a plurality of passive components 202 , and a functional surface of at least one of the passive components 202 is electrically connected to the first surface of the substrate 10 through the third pad structure 204 .

[0052] In this embodiment, the height of the copper core ball structure 40 is greater than the height of the passive device 202 .

[0053] In this embodiment, the passive device 202 includes but is not limited to one or more of a resistor, a capacitor, and an inductor.

[0054] In other embodiments, the first packaging structure may not have passive components.

[0055] In this embodiment, the functional surface of the inductor 30 is electrically connected to the semiconductor chip 203 of the first packaging structure through the copper core ball structure 40 and the substrate 10 .

[0056] In other embodiments, the functional surface of the inductor is electrically connected to the copper core ball structure, the substrate, and the semiconductor chip of the first packaging structure through solder balls.

[0057] In this embodiment, the material of the first pad structure 401 is one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver; the material of the second pad structure 402 is one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0058] In this embodiment, the molding compound of the first packaging structure 20 may be an inorganic filler or an organic filler. The molding compound of the first packaging structure 20 may be an epoxy resin, a polyimide resin, a benzocyclobutene resin, or a polybenzoxazole resin; or may be polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer, or polyvinyl alcohol.

[0059] In this embodiment, a surface of the first pad structure 401 protrudes from the first surface of the first packaging structure 20 .

[0060] In other embodiments, the surface of the first pad structure does not protrude from the first surface of the first packaging structure, and the surface of the first pad structure has a solder ball, which protrudes from the surface of the first packaging structure and is used to connect the inductor.

[0061] The utility model also provides a method for preparing a semiconductor packaging structure, comprising:

[0062] Step S10, providing a substrate, wherein the substrate comprises a first surface and a second surface opposite to the first surface;

[0063] Step S20, forming a first packaging structure on the first surface of the substrate, the first packaging structure comprising a first surface and a second surface opposite to the first surface, and the second surface of the first packaging structure is arranged opposite to the first surface of the substrate, wherein the first packaging structure has a copper core ball structure, a semiconductor chip and a passive device, the copper core ball structure penetrates the first packaging structure and comprises a copper core ball, a first pad structure located on one side of the copper core ball and located on the first surface of the first packaging structure, and a second pad structure located on the other side of the copper core ball and located on the second surface of the first packaging structure;

[0064] Step S30 , electrically connecting the inductor to the first pad structure of the copper core ball structure, forming a plurality of solder balls on the second surface of the substrate, and obtaining the semiconductor package structure.

[0065] Specifically, step S10 is performed to provide a substrate 10, wherein the substrate 10 includes a first surface and a second surface opposite to the first surface.

[0066] In this embodiment, the substrate 10 is a single-layer board or a multi-layer board. The substrate 10 is one of a resin substrate, a ceramic substrate, a glass substrate, a silicon substrate, a printed circuit board (PCB) or a flexible circuit board (FPC).

[0067] In this embodiment, the substrate 10 has a connection circuit therein, and the material of the connection circuit is metal, specifically, it can be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0068] Execute step S20, such as Figure 3~Figure 7 As shown, a first packaging structure 20 is formed on the first surface of the substrate 10, the first packaging structure 20 includes a first surface and a second surface opposite to the first surface, and the second surface of the first packaging structure 20 is arranged opposite to the first surface of the substrate 10, wherein the first packaging structure 20 has a copper core ball structure 40, a semiconductor chip 203 and a passive device 202, the copper core ball structure 40 runs through the first packaging structure 20 and the copper core ball structure 40 includes a copper core ball 201, a first pad structure 401 located on one side of the copper core ball 201 and located on the first surface of the first packaging structure 20, and a second pad structure 402 located on the other side of the copper core ball 201 and located on the second surface of the first packaging structure 20.

[0069] Specifically, the steps of forming the first packaging structure 20 include:

[0070] Step S201 : forming a third pad structure 204 on the first surface of the substrate 10 .

[0071] In this embodiment, SMT (Surface Mounted Technology) solder paste is printed on the first surface of the substrate 10 to form a third pad structure 204 on the first surface of the substrate 10 . The third pad structure 204 is used for but not limited to mounting the passive device 202 in the first packaging structure 20 .

[0072] In this embodiment, the material of the third pad structure 204 is metal, and specifically may be one or more of aluminum, nickel, tin, tungsten, platinum, copper, titanium, chromium, tantalum, gold, and silver.

[0073] Step S202 , forming a second pad structure 402 of the copper core ball structure 40 and the copper core ball 201 of the copper core ball structure 40 on the first surface of the substrate 10 .

[0074] In this embodiment, flux is printed at the position where the copper core ball structure 40 is pre-formed on the first surface of the substrate 10 to form the second pad structure 402, and then the copper core ball 201 is mounted on the surface of the second pad structure 402 so that the second pad structure 402 is located on the other side of the copper core ball 201.

[0075] In this embodiment, the copper core ball 201 is a copper core-tin shell structure.

[0076] In other embodiments, the copper core ball is composed of a copper core, a nickel layer, and a tin shell structure from the inside to the outside, or other suitable metal core-shell structures.

[0077] Step S203 , forming the semiconductor chip 203 and the passive device 202 on the first surface of the substrate 10 , wherein the functional surface of the passive device 202 is mounted on the surface of the third pad structure 204 , and the functional surface of the semiconductor chip 203 is mounted on the first surface of the substrate 10 .

[0078] In this embodiment, there is one semiconductor chip 203 , and a functional surface of the semiconductor chip 203 is electrically connected to the first surface of the substrate 10 .

[0079] In other embodiments, the first packaging structure 20 has a plurality of semiconductor chips 203 therein, and a functional surface of at least one of the semiconductor chips 203 is electrically connected to the first surface of the substrate 10 .

[0080] In this embodiment, the first packaging structure 20 has a plurality of passive components 202 , and a functional surface of at least one of the passive components 202 is electrically connected to the first surface of the substrate 10 through the third pad structure 204 .

[0081] In other embodiments, the first packaging structure may not have passive components.

[0082] In this embodiment, the height of the copper core ball structure 40 is greater than the height of the semiconductor chip 203 , and the height of the copper core ball structure 40 is greater than the height of the passive device 202 .

[0083] The copper core ball structure 40 can well maintain the stability of the semiconductor packaging structure, and the semiconductor packaging structure supported by the copper core ball structure 40 has more space to accommodate other electronic components, which is conducive to achieving a thinner and higher density semiconductor packaging structure and can also effectively reduce the cost of the semiconductor packaging structure.

[0084] Step S204 , reflow soldering the substrate 10 formed with the semiconductor chip 203 , the passive device 202 , the second pad structure 402 of the copper core ball structure 40 , and the copper core ball 201 of the copper core ball structure 40 to form solder interconnection.

[0085] Step S205, encapsulate the semiconductor chip 203, the passive device 202, the second pad structure 402 of the copper core ball structure 40, the copper core ball 201 of the copper core ball structure 40 and the first surface of the substrate 10 after reflow to form a first packaging structure 20, wherein the first packaging structure 20 is formed on one side of the first surface of the substrate 10 as the second surface of the first packaging structure 20, and the side corresponding to the second surface of the first packaging structure 20 as the first surface of the first packaging structure 20.

[0086] In this embodiment, the molding compound may be an inorganic filler or an organic filler. The molding compound may be an epoxy resin, a polyimide resin, a benzocyclobutene resin or a polybenzoxazole resin; or may be polybutylene terephthalate, polycarbonate, polyethylene terephthalate, polyethylene, polypropylene, polyolefin, polyurethane, polyolefin, polyether sulfone, polyamide, polyurethane, ethylene-vinyl acetate copolymer or polyvinyl alcohol.

[0087] Step S206 , removing the plastic packaging material on one side of the copper core ball 201 in the first packaging structure 20 to expose one side of the copper core ball 201 .

[0088] In this embodiment, the plastic encapsulation material is laser ablated until one side of the copper core ball 201 is exposed.

[0089] In other embodiments, the molding compound is ground until one side of the copper core ball is exposed.

[0090] Step S207 , forming a first pad structure 401 on one side of the exposed copper core ball 201 .

[0091] In this embodiment, electroplating is performed on the exposed side of the copper core ball 201 to form the first pad structure 401 , so that the first pad structure 401 is formed on one side of the copper core ball 201 .

[0092] In this embodiment, a surface of the first pad structure 401 protrudes from the first surface of the first packaging structure 20 .

[0093] In this embodiment, after the first pad structure 401 is formed on one side of the copper core ball 201 and the second pad 402 is formed on the other side, the copper core ball structure 40 is formed.

[0094] The tin shell of the copper core ball 201 in the copper core ball structure 40 is an effective welding part of the copper core ball, so that the formed copper core ball structure 40 has good connection performance with the device, so that the metal copper layer does not need to be directly attached to the surface of the plastic packaging material, avoiding the delamination of the metal copper layer and the plastic packaging material caused by using the copper layer as the connecting material in the traditional process, thereby enhancing the stability of the semiconductor packaging structure; at the same time, the copper core ball structure 40 only needs to be used at the electrical connection position, avoiding the waste of copper material caused by using a whole layer of copper as the connecting material in the traditional process.

[0095] Furthermore, the core of the copper core ball 201 is copper, and metallic copper has a high melting point. During the reflow process, the copper core of the copper core ball 201 will not undergo unacceptable deformation, and the stability of the semiconductor packaging structure can be well maintained. The space occupied by the copper layer is saved, and the semiconductor packaging structure supported by the copper core ball structure 40 has more space to accommodate other electronic parts, which is conducive to achieving a thinner and higher density semiconductor packaging structure, and can also effectively reduce the cost of the semiconductor packaging structure.

[0096] Execute step S30, such as Fig. 9 As shown, the inductor 30 is electrically connected to the first pad structure 401 of the copper core ball structure 40, and a plurality of solder balls 50 are formed on the second surface of the substrate 10 to obtain the semiconductor package structure.

[0097] In this embodiment, the functional surface of the inductor 30 is welded to the first pad structure 401 of the copper core ball 201 structure, so that the functional surface of the inductor 30 is electrically connected to the semiconductor chip 203 of the first packaging structure through the copper core ball structure 40 and the substrate 10.

[0098] In other embodiments, the second surface of the substrate may not have solder balls.

[0099] The present embodiment provides a method for preparing a semiconductor packaging structure, which has a simple process flow and uses relatively low-cost equipment. In addition, the manufactured semiconductor packaging structure is thin and low-cost, and can be widely used in chip system integration.

[0100] Although the utility model has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the utility model. Any technical personnel in this field can make possible changes and modifications to the technical solution of the utility model by using the methods and technical contents disclosed above without departing from the spirit and scope of the utility model. Therefore, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the utility model without departing from the content of the technical solution of the utility model are within the protection scope of the technical solution of the utility model.

Claims

1. A semiconductor packaging structure, characterized in that: include: A substrate, a first packaging structure, and an inductor; The substrate comprises a first surface and a second surface opposite to the first surface, and the first packaging structure comprises a first surface and a second surface opposite to the first surface; The first packaging structure is disposed on the first surface of the substrate, and the second surface of the first packaging structure is disposed opposite to the first surface of the substrate; The first package structure includes at least one semiconductor chip and a copper core ball structure, wherein the copper core ball structure penetrates the first package structure and includes a copper core ball, a first pad structure located on one side of the copper core ball and on a first surface of the first package structure, and a second pad structure located on the other side of the copper core ball and on a second surface of the first package structure; The inductor is arranged on the surface of the first pad structure, and is electrically connected to the semiconductor chip of the first packaging structure through the copper core ball structure and the substrate.

2. A semiconductor packaging structure according to claim 1, characterized in that: The copper core ball is a copper core-tin shell structure or is a copper core, a nickel layer and a tin shell structure from the inside to the outside.

3. The semiconductor packaging structure according to claim 1, characterized in that: The first packaging structure includes a plurality of semiconductor chips, and at least one of the semiconductor chips is electrically connected to the inductor.

4. The semiconductor packaging structure according to claim 1, characterized in that: The semiconductor chip is a chip or a bare chip with a packaging structure, wherein the chip with a packaging structure includes a 2.5D packaged multi-layer chip, a 3D packaged multi-layer chip, or a single-layer packaged chip.

5. The semiconductor package structure according to claim 1, characterized in that: The semiconductor chip includes a signal processing chip, a logic control chip, a storage chip, a sensor chip, a power chip or a radio frequency chip.

6. The semiconductor packaging structure according to claim 1, characterized in that: The first packaging structure also includes at least one passive component, and a functional surface of at least one of the passive components is electrically connected to the first surface of the substrate.

7. The semiconductor package structure according to claim 6, characterized in that: The passive components include one or more of resistors, capacitors, and inductors.

8. The semiconductor packaging structure according to claim 1, characterized in that: A surface of the first pad structure protrudes from a first surface of the first packaging structure.

9. The semiconductor package structure according to claim 1, characterized in that: The first packaging structure includes the copper core ball structure, at least one semiconductor chip and a packaging structure of a molding compound.

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