Semiconductor light-emitting chip

Abstract

The utility model relates to a semiconductor light-emitting chip. The semiconductor light-emitting chip comprises a substrate, a first conductive type semiconductor, an active layer, an electron blocking layer and a second conductive type semiconductor which are sequentially connected from bottom to top. According to the semiconductor light-emitting chip, the lattice constant gradient, the separation energy gradient and the volume elastic modulus gradient of the semiconductor light-emitting chip are regulated and controlled, so that the problem of photoelectric conversion efficiency attenuation of a light-emitting element under a large-current effect is solved; the WPE photoelectric conversion efficiency of a quantum well is improved by regulating and controlling the heavy hole effective mass gradient, the valence band effective state density gradient, the saturated electron drift rate gradient and the longitudinal sound velocity gradient of the semiconductor light-emitting chip and the electron and hole wave function distribution of the quantum well, and the WPE photoelectric conversion efficiency is improved while the attenuation rate of the photoelectric conversion efficiency is reduced. Therefore, the luminous efficiency of the semiconductor chip is enhanced.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor photoelectric devices, and in particular relates to a semiconductor light-emitting chip. Background Art

[0002] Semiconductor components, especially semiconductor light-emitting chips, have a wide adjustable wavelength range, high luminous efficiency, energy saving and environmental protection, a long service life of more than 100,000 hours, small size, multiple application scenarios, and strong designability. They have gradually replaced incandescent lamps and fluorescent lamps and grown into the light source for ordinary household lighting. They are also widely used in new scenarios, such as indoor high-resolution display screens, outdoor display screens, Mini-LED, Micro-LED, mobile TV backlight, backlighting, street lights, car headlights, daytime running lights, interior atmosphere lights, flashlights and other application fields.

[0003] Traditional nitride semiconductors are grown on sapphire substrates, which have large lattice mismatch and thermal mismatch, resulting in higher defect density and polarization effect, reducing the luminous efficiency of semiconductor light-emitting chips. At the same time, the hole ionization efficiency of traditional nitride semiconductors is much lower than the electron ionization efficiency, resulting in a hole concentration that is more than one order of magnitude lower than the electron concentration. Excess electrons will overflow from the multi-quantum wells to the second conductive semiconductor to produce non-radiative recombination. The low hole ionization efficiency will make it difficult to effectively inject holes from the second conductive semiconductor into the multi-quantum wells, and the efficiency of hole injection into the multi-quantum wells is low, resulting in low luminous efficiency of the multi-quantum wells. In addition, the photoelectric conversion efficiency attenuation rate of existing light-emitting chips under large current effects is between 50% and 70%, and the WPE photoelectric conversion efficiency of quantum wells is between 50% and 60%. The photoelectric conversion rate of the semiconductor directly affects the luminous efficiency and stability of the chip, so the luminous efficiency of existing semiconductor chips is relatively low. Utility Model Content

[0004] The purpose of the utility model is to provide a semiconductor light emitting chip with a simple structure and reasonable design in order to solve the above problems.

[0005] The utility model achieves the above-mentioned purpose through the following technical solutions:

[0006] The invention comprises a substrate, a first conductive semiconductor, an active layer, an electron blocking layer and a second conductive semiconductor connected in sequence from bottom to top, wherein the active layer comprises a first quantum well, a second quantum well and a third quantum well, and the first quantum well, the second quantum well and the third quantum well are all quantum well structures composed of a well layer and a barrier layer;

[0007] There are lattice constant gradients, separation energy gradients and bulk elastic modulus gradients among the active layer, the first conductive semiconductor and the electron blocking layer.

[0008] As a further optimization scheme of the utility model, the lattice constants of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are: a, b, c, d, f, g, respectively, and the lattice constant gradient between the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: g≤d≤f≤a≤b≤c;

[0009] The separation energies of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are B, C, D, E, F, and G, respectively, and the separation energy gradient between the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: D≤C≤B≤F≤E≤G;

[0010] The volume elastic moduli of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are N, P, Q, R, S, and T, respectively, and the volume elastic modulus gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: Q≤P≤N≤T≤R≤S.

[0011] As a further optimization scheme of the utility model, the lattice constant gradient of the interface between the first quantum well and the first conductive semiconductor has a function y=Ux curve distribution, wherein 0<U<1;

[0012] The separation energy gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=lnx+x curve distribution;

[0013] The bulk elastic modulus gradient of the interface between the first quantum well and the first conductive semiconductor has a function y=ex-ex curve distribution.

[0014] As a further optimization scheme of the utility model, there are also heavy hole effective mass gradient, valence band effective state density gradient, saturated electron drift rate gradient and longitudinal sound velocity gradient between the active layer, the first conductive semiconductor and the electron blocking layer.

[0015] As a further optimization scheme of the utility model, the effective mass of heavy holes in the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is n, o, p, q, r, s in sequence, and the effective mass gradient of heavy holes between the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: p≤o≤n≤r≤q≤s;

[0016] The valence band effective state densities of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are h, i, j, k, l, and m in sequence, and the valence band effective state density gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: l≤k≤m≤h≤i≤j;

[0017] The saturated electron drift rates of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are t, u, v, w, z, and A in sequence, and the saturated electron drift rate gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: A≤w≤z≤t≤u≤v;

[0018] The longitudinal sound velocities of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are I, J, K, L, and M, respectively, and the longitudinal sound velocity gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: J≤I≤H≤L≤K≤M.

[0019] As a further optimization solution of the utility model, the heavy hole effective mass gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=ex+x curve distribution;

[0020] The valence band effective state density gradient at the interface between the first quantum well and the first conductive type semiconductor has a first quadrant curve distribution of function y=arccthx;

[0021] The saturated electron drift rate gradient at the interface between the first quantum well and the first conductive semiconductor has a first quadrant curve distribution of a function y=xV, where V>1 and is an odd number;

[0022] The longitudinal acoustic velocity gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=lnx+ex curve distribution.

[0023] As a further optimization scheme of the utility model, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is 5 to 200 angstroms;

[0024] The barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the barrier layer thickness is 10 to 400 angstroms;

[0025] The first conductive semiconductor, the second conductive semiconductor, and the electron blocking layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; the thickness of the first conductive semiconductor is 5 to 60,000 angstroms;

[0026] The thickness of the second conductive semiconductor is 10 to 9000 angstroms; the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

[0027] The beneficial effects of the utility model are:

[0028] The utility model improves the problem of photoelectric conversion efficiency attenuation under high current effect of light-emitting elements by regulating the lattice constant gradient, separation energy gradient and bulk elastic modulus gradient of semiconductor light-emitting chips, and improves the WPE photoelectric conversion efficiency of quantum wells by regulating the heavy hole effective mass gradient, valence band effective state density gradient, saturated electron drift rate gradient and longitudinal sound velocity gradient of semiconductor light-emitting chips as well as the electron and hole wave function distribution of quantum wells, thereby improving the WPE photoelectric conversion efficiency while reducing the photoelectric conversion efficiency attenuation rate, thereby enhancing the luminous efficiency of semiconductor chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 It is a structural schematic diagram of a semiconductor light-emitting chip of the utility model;

[0030] Figure 2 It is a structural SIMS secondary ion mass spectrum of a semiconductor light-emitting chip of the utility model;

[0031] Figure 3 This is a SIMS secondary ion mass spectrum of a semiconductor light-emitting chip of the utility model (partial enlarged view);

[0032] Figure 4 This is a transmission electron microscope TEM image of a semiconductor light-emitting chip of the utility model;

[0033] Figure 5 This is a transmission electron microscope TEM image (partial magnified image) of a semiconductor light-emitting chip of the utility model;

[0034] Figure 6 This is a transmission electron microscope TEM image (partial magnified image) of a semiconductor light-emitting chip of the utility model;

[0035] Figure 7 This is a transmission electron microscope TEM image (partial magnified image) of a semiconductor light-emitting chip of the utility model.

[0036] In the figure: 100, substrate; 101, first conductive semiconductor; 102, active layer; 102a, first quantum well; 102b, second quantum well; 102c, third quantum well; 103, electron blocking layer; 105, second conductive semiconductor. DETAILED DESCRIPTION

[0037] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0038] like Figures 1 to 7 As shown, a semiconductor light-emitting chip includes a substrate 100, a first conductive semiconductor 101, an active layer 102, an electron blocking layer 103 and a second conductive semiconductor 105 connected in sequence from bottom to top, and there are lattice constant gradients, separation energy gradients and volume elastic modulus gradients between the active layer 102, the first conductive semiconductor 101 and the electron blocking layer 103. The semiconductor light-emitting chip also has a heavy hole effective mass gradient, a valence band effective state density gradient, a saturated electron drift rate gradient and a longitudinal sound velocity gradient.

[0039] It should be noted that by regulating the lattice constant gradient, separation energy gradient and bulk elastic modulus gradient of the semiconductor light-emitting chip, the lattice constant gradient, separation energy gradient and bulk elastic modulus gradient of the semiconductor light-emitting chip can be regulated, thereby enhancing the quantum confinement effect of the active layer 102, improving the quantum confinement effect of electrons and holes under large current injection conditions, inhibiting the capture of electrons and holes by defects, reducing SRH (Shockley-Read-Hall) non-radiative recombination, reducing the InN phase separation of the quantum well of the semiconductor light-emitting element, improving the crystal quality and interface quality of the quantum well, and reducing the quantum confinement of the quantum well. The stark effect improves the problem of photoelectric conversion efficiency attenuation under the large current effect of the light-emitting element, and the photoelectric conversion efficiency attenuation is reduced from 50% to 70% to 20% to 50%. At the same time, the heavy hole effective mass gradient, valence band effective state density gradient, saturated electron drift rate gradient and longitudinal sound velocity gradient of the semiconductor light-emitting chip are controlled, and the electron and hole wave function distribution of the quantum well is regulated. The uniformity of the carrier distribution of the active layer 102 can be improved, and the overlapping probability of the electron-hole wave function can be increased, thereby improving the WPE photoelectric conversion efficiency of the quantum well, and the WPE photoelectric conversion efficiency is increased from 50% to 60% to 60% to 85%.

[0040] Furthermore, the active layer 102 includes a first quantum well 102a, a second quantum well 102b and a third quantum well 102c. The first quantum well 102a, the second quantum well 102b and the third quantum well 102c are all quantum well structures composed of well layers and barrier layers, and the number of quantum well periods is 1-50.

[0041] Furthermore, the lattice constants of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are respectively: a, b, c, d, f, g, and the lattice constant gradient between the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: g≤d≤f≤a≤b≤c.

[0042] It should be noted that the semiconductor lattice constant refers to the average distance between atoms in a semiconductor crystal. It is one of the important physical parameters of semiconductor materials. The size of the lattice constant directly affects the electrical and mechanical properties of the semiconductor.

[0043] Furthermore, the valence band effective state density of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is h, i, j, k, l, and m respectively, and the valence band effective state density gradient between the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: l≤k≤m≤h≤i≤j.

[0044] It should be noted that the formula D(E)=(1 / V)*(dN / dE) is usually used to describe the effective state density of the valence band, where D(E) represents the density of electron states with energy levels near energy E per unit volume, V is the volume of the crystal, dN represents the number of electron states with energy levels in the range of E to E+dE, and dE is the slight change in energy level energy.

[0045] It should be further explained that the main purpose of the valence band effective state density formula is to study the electronic structure and energy band width of the material. By analyzing the state density distribution in the energy band structure, the conductivity, optical properties and other related properties of the material can be inferred. For example, if the energy level density in a certain energy band is higher, then more electrons may be filled into this energy level, resulting in enhanced conductivity of the material.

[0046] Furthermore, the effective masses of heavy holes in the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are n, o, p, q, r, and s, respectively, and the effective mass gradient of heavy holes between the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: p≤o≤n≤r≤q≤s.

[0047] It should be noted that the main function of holes in semiconductors is to form charge defects. Once charge defects are formed, holes can promote the movement of electrons in semiconductor materials, and can be moved by the electric field after the conductivity of the semiconductor material reaches a certain level; holes can enhance the thermoelectric effect; holes can convert power into electrical energy, thereby improving the conversion efficiency in semiconductors.

[0048] Furthermore, the saturated electron drift velocities of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are t, u, v, w, z, and A, respectively, and the saturated electron drift rate gradient between the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: A≤w≤z≤t≤u≤v.

[0049] It should be noted that in the operation of semiconductor devices, most of them use electrons as carriers to realize current transmission. A high electron saturation drift rate can ensure that semiconductor devices can still maintain high mobility when working in high electric field materials, and thus have a large current density. This is the key to the device obtaining a high power output density.

[0050] Further, the separation energies of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are B, C, D, E, F, and G, respectively, and the separation energy gradient between the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: D≤C≤B≤F≤E≤G;

[0051] The longitudinal sound velocities of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are I, J, K, L, and M, respectively. The longitudinal sound velocity gradient among the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: J≤I≤H≤L≤K≤M;

[0052] The volume elastic moduli of the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 are N, P, Q, R, S, and T respectively, and the volume elastic modulus gradient among the first quantum well 102a well layer, the second quantum well 102b well layer, the third quantum well 102c well layer, the third quantum well 102c barrier layer, the first conductive semiconductor 101, and the electron blocking layer 103 is: Q≤P≤N≤T≤R≤S.

[0053] Furthermore, the lattice constant gradient of the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=U x (0<U<1) curve distribution; the heavy hole effective mass gradient at the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=e x +x curve distribution; the valence band effective state density gradient at the interface between the first quantum well 102a and the first conductive semiconductor 101 has a first quadrant curve distribution of the function y=arcthx.

[0054] Furthermore, the saturated electron drift velocity gradient at the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=x -V (V>1 odd number) of the first quadrant curve distribution; the separation energy gradient of the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=lnx+x curve distribution; the longitudinal sound velocity gradient of the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=lnx+e x Curve distribution; the bulk modulus gradient of the interface between the first quantum well 102a and the first conductive semiconductor 101 has a function y=e x -e -x Curved distribution.

[0055] Further, the well layer of the active layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN, and the well layer thickness is The barrier layer of the active layer 102 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN. The layer thickness is 10 to 400 angstroms; the first conductive semiconductor 101, the second conductive semiconductor 105, and the electron blocking layer 103 include GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGa Any one or any combination of AsSb, SiC, Ga2O3, BN; the thickness of the first conductive semiconductor 101 is 5 to 60,000 angstroms; the thickness of the second conductive semiconductor 105 is 10 to 9,000 angstroms; the substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate 100, sapphire / AlN composite substrate 100, sapphire / SiNx, magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate 100.

[0056] The above-mentioned embodiments only express several implementation methods of the utility model, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the utility model. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the utility model, which all belong to the protection scope of the utility model.

Claims

1. A semiconductor light-emitting chip, comprising a substrate, a first conductive semiconductor, an active layer, an electron blocking layer and a second conductive semiconductor connected in sequence from bottom to top, characterized in that: The active layer includes a first quantum well, a second quantum well and a third quantum well, wherein the first quantum well, the second quantum well and the third quantum well are all quantum well structures composed of a well layer and a barrier layer; There are lattice constant gradients, separation energy gradients and bulk elastic modulus gradients among the active layer, the first conductive semiconductor and the electron blocking layer.

2. A semiconductor light emitting chip according to claim 1, characterized in that: The lattice constants of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are: a, b, c, d, f, g, respectively, and the lattice constant gradient between the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: g≤d≤f≤a≤b≤c; The separation energies of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are B, C, D, E, F, and G, respectively, and the separation energy gradient between the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: D≤C≤B≤F≤E≤G; The volume elastic moduli of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are N, P, Q, R, S, and T, respectively, and the volume elastic modulus gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: Q≤P≤N≤T≤R≤S.

3. A semiconductor light emitting chip according to claim 2, characterized in that: The lattice constant gradient of the interface between the first quantum well and the first conductive semiconductor has a function y=U x Curve distribution, where 0<U<1; The separation energy gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=lnx+x curve distribution; The bulk elastic modulus gradient of the interface between the first quantum well and the first conductive semiconductor has a function y=e x -e -x Curved distribution.

4. A semiconductor light emitting chip according to claim 1, characterized in that: There are also heavy hole effective mass gradient, valence band effective state density gradient, saturated electron drift velocity gradient and longitudinal sound velocity gradient between the active layer, the first conductive semiconductor and the electron blocking layer.

5. A semiconductor light emitting chip according to claim 4, characterized in that: The effective masses of heavy holes in the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are n, o, p, q, r, and s, respectively, and the effective mass gradient of heavy holes among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: p≤o≤n≤r≤q≤s; The valence band effective state densities of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are h, i, j, k, l, and m in sequence, and the valence band effective state density gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: l≤k≤m≤h≤i≤j; The saturated electron drift rates of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are t, u, v, w, z, and A in sequence, and the saturated electron drift rate gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: A≤w≤z≤t≤u≤v; The longitudinal sound velocities of the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer are I, J, K, L, and M, respectively, and the longitudinal sound velocity gradient among the first quantum well layer, the second quantum well layer, the third quantum well layer, the third quantum well barrier layer, the first conductive semiconductor, and the electron blocking layer is: J≤I≤H≤L≤K≤M.

6. A semiconductor light emitting chip according to claim 5, characterized in that: The heavy hole effective mass gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=e x +x curve distribution; The valence band effective state density gradient at the interface between the first quantum well and the first conductive type semiconductor has a first quadrant curve distribution of function y=arccthx; The saturated electron drift velocity gradient at the interface between the first quantum well and the first conductive semiconductor has a function y=x -V The first quadrant curve distribution of , where V>1 and is an odd number; The longitudinal acoustic velocity gradient of the interface between the first quantum well and the first conductive semiconductor has a function y=lnx+e x Curved distribution.

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