Display device

Abstract

Disclosed is a display device including: an active area including a first active area and a second active area; pixels disposed in the first and second active areas and including respective light emitting elements; a first optical sensor disposed in the first active area and including a first photoelectric conversion element; a second optical sensor disposed in the second active area and including a second photoelectric conversion element; a light blocking member disposed in the first and second active areas, including a first opening exposing the light emitting element and a second opening exposing the first photoelectric conversion element, and covering the second photoelectric conversion element; and a first color filter and a second color filter disposed on the light blocking member and overlapping each other over the second photoelectric conversion element.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0056159 filed in the Korean Intellectual Property Office on April 28, 2023, and all rights arising therefrom, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] The present disclosure relates to a display device. Background Art

[0004] As multimedia technology develops, the importance of display devices continues to increase. Therefore, various types of display devices such as liquid crystal display devices, organic light emitting display devices, etc. have been developed. Utility Model Content

[0005] Embodiments of the present disclosure may provide a display device including an optical sensor, in which noise included in a signal from the optical sensor may be sensed.

[0006] However, the embodiments of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those of ordinary skill in the art to which the present disclosure pertains by referring to the detailed description of the present disclosure given below.

[0007] According to an embodiment of the present disclosure, a display device includes: an effective area, including a first effective area and a second effective area; pixels, which are arranged in the first effective area and the second effective area and include corresponding light-emitting elements; a first optical sensor, which is arranged in the first effective area and includes a first photoelectric conversion element; a second optical sensor, which is arranged in the second effective area and includes a second photoelectric conversion element; a light blocking member, which is arranged in the first effective area and the second effective area, includes a first opening exposing the light-emitting element and a second opening exposing the first photoelectric conversion element, and covers the second photoelectric conversion element; and a first color filter and a second color filter, which are arranged on the light blocking member and overlap each other above the second photoelectric conversion element.

[0008] In an implementation, the light blocking member may completely cover the second photoelectric conversion element.

[0009] In an embodiment, each of the first color filter and the second color filter may completely cover the second photoelectric conversion element.

[0010] In an embodiment, the second active area may be located at an edge of the active area.

[0011] In an embodiment, the display device may further include a third color filter disposed in the second opening to overlap with the first photoelectric conversion element.

[0012] In an implementation, the first color filter may be a red color filter, the second color filter may be a blue color filter, and the third color filter may be a green color filter.

[0013] In an embodiment, the pixel may include a first color pixel, a second color pixel, and a third color pixel.

[0014] In an embodiment, a first color filter may also be disposed in a first opening of a first group of light-emitting elements exposing first color pixels within the first opening; a second color filter may also be disposed in a first opening of a second group of light-emitting elements exposing second color pixels within the first opening; and a third color filter may also be disposed in a first opening of a third group of light-emitting elements exposing third color pixels within the first opening.

[0015] In an embodiment, the display device may further include a third color filter disposed on the light blocking member and overlapping the first color filter and the second color filter over the second photoelectric conversion element.

[0016] In an implementation, the third color filter may completely cover the second photoelectric conversion element.

[0017] According to an embodiment of the present disclosure, a display device includes: a substrate including a first effective area and a second effective area; pixels are arranged on the substrate to be located in the first effective area and the second effective area, and include corresponding light-emitting elements; a first optical sensor is arranged on the substrate to be located between pixels positioned in the first effective area, and include corresponding first photoelectric conversion elements; a second optical sensor is arranged on the substrate to be located between pixels positioned in the second effective area, and include corresponding second photoelectric conversion elements; a light blocking member is arranged above at least the second photoelectric conversion element and completely covers the second photoelectric conversion element; and a first color filter and a second color filter are arranged on the light blocking member and overlap each other above the second photoelectric conversion element.

[0018] In an embodiment, the first color filter and the second color filter may completely cover the second photoelectric conversion element.

[0019] In an implementation, the first color filter may be a red color filter, and the second color filter may be a blue color filter.

[0020] In an embodiment, the display device may further include a third color filter disposed on the light blocking member and overlapping the first color filter and the second color filter over the second photoelectric conversion element.

[0021] In an implementation, the third color filter may be a green color filter.

[0022] In an implementation, the third color filter may completely cover the second photoelectric conversion element.

[0023] In an embodiment, the light blocking member may be disposed in the first and second active regions and include a first opening exposing at least a portion of each of the light emitting elements and a second opening exposing at least a portion of each of the first photoelectric conversion elements.

[0024] In an embodiment, the pixel may include a first color pixel, a second color pixel, and a third color pixel.

[0025] In an embodiment, a first color filter may also be disposed in a first opening of a first group of light-emitting elements exposing first color pixels within the first opening; a second color filter may also be disposed in a first opening of a second group of light-emitting elements exposing second color pixels within the first opening; and a third color filter may be disposed in a first opening of a third group of light-emitting elements exposing third color pixels within the second opening and within the first opening.

[0026] In an embodiment, the first active region may be located at the center of an active region including the first active region and the second active region, and the second active region may be located at an edge of the active region.

[0027] The display device according to the embodiment may include a first optical sensor disposed in a first active region and including a first photoelectric conversion element, and a second optical sensor disposed in a second active region and including a second photoelectric conversion element. In addition, the display device may include a light blocking member and a first color filter and a second color filter disposed above the second photoelectric conversion element to overlap each other.

[0028] According to an embodiment, external light can be effectively blocked from being incident on the second photoelectric conversion element. Therefore, the second optical sensor can be used to effectively sense noise generated from the display panel and improve the performance of a light sensing unit (e.g., a fingerprint sensor) including the first optical sensor and the second optical sensor.

[0029] However, the effects according to the embodiments of the present disclosure are not limited to those exemplified above, and various other effects are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other aspects and features of the present disclosure will become more apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0031] Figure 1 is a plan view showing a display device according to an embodiment;

[0032] Figure 2 is a block diagram of a display device according to an embodiment;

[0033] Figure 3 is a cross-sectional view showing a schematic cross section of an active area of ​​a display device and a method for sensing a fingerprint of a finger according to an embodiment;

[0034] Figure 4 is a cross-sectional view showing a schematic cross section of an active area of ​​a display device and a method for sensing a fingerprint of a finger according to an embodiment;

[0035] Figure 5 is a circuit diagram of a pixel and an optical sensor according to an embodiment;

[0036] Figure 6 is a plan view showing an arrangement structure of pixels, optical sensors, and color filters according to an embodiment;

[0037] Figure 7 is a plan view showing a pixel, an optical sensor, and a light blocking member according to an embodiment;

[0038] Figure 8 It is shown along Figure 6 and Figure 7 A cross-sectional view of an example of a cross-section taken along line II';

[0039] Fig. 9 It is shown along Figure 6 and Figure 7 A cross-sectional view of an example of a cross-section taken along line II-II';

[0040] Fig.10 is a plan view showing an arrangement structure of pixels, optical sensors, and color filters according to an embodiment;

[0041] Fig.11 It is shown along Fig.10 A cross-sectional view of an example of a cross section taken along line III-III'; and

[0042] Fig.12 is a graph showing light transmittance of a light blocking layer according to an embodiment. DETAILED DESCRIPTION

[0043] The present disclosure will now be described more fully below with reference to the accompanying drawings, in which preferred embodiments of the present disclosure are shown. However, the present disclosure may be implemented in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided to make the present disclosure thorough and complete and to fully convey the scope of the present disclosure to those skilled in the art.

[0044] It will also be understood that when an element or layer is referred to as being “on” another element or layer, it can be directly on the other element or layer, or intervening layers may also be present. Like reference numerals refer to like components throughout the specification.

[0045] It will be understood that although the terms "first", "second", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element. Similarly, the second element may also be referred to as the first element.

[0046] As used herein, the word "or" means a logical "or" such that the statement "A, B, or C" means "A and B and C," "A and B but not C," "A and C but not B," "B and C but not A," "A but not B and not C," "B but not A and not C," and "C but not A and not B," unless the context dictates otherwise.

[0047] The features of each of the various embodiments of the present disclosure may be combined with each other partially or as a whole, and may interact with each other differently technically, and the respective embodiments may be implemented independently of each other, or may be implemented together in association with each other.

[0048] Figure 1 is a plan view showing a display device 1 according to an embodiment.

[0049] exist Figure 1 , a first direction DR1, a second direction DR2, and a third direction DR3 are shown. The first direction DR1 may be a direction parallel to one side of the display device 1 in a plan view, and may be, for example, a horizontal direction of the display device 1. The second direction DR2 may be a direction parallel to another side in contact with one side of the display device 1 in a plan view, and may be, for example, a vertical direction of the display device 1. The third direction DR3 may be a thickness direction (or height direction) of the display device 1. However, the directions mentioned in the following embodiments may represent relative directions, and the embodiments are not limited thereto.

[0050] Furthermore, in the embodiment, the term “above” or “top surface” expressed with respect to the third direction DR3 may indicate the display surface side of the display panel 10, and the term “below”, “bottom surface” or “rear surface” may indicate the side opposite to the display surface of the display panel 10. However, depending on the direction facing the display panel 10 or the display device 1 including the display panel 10, the defined direction may be changed to an opposite direction, etc.

[0051] refer to Figure 1 , the display device 1 may be one of various electronic devices that provide a display surface on which an image is displayed. For example, the display device 1 may be one of various electronic devices, including a mobile phone, a smart phone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook computer, an electronic book, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation device, an ultra-mobile PC (UMPC), a television, a game console, a wristband watch-type electronic device, a head-mounted display, a personal computer display screen, a laptop computer, a car dashboard, a digital camera, a video camera, an external billboard, an electronic billboard, various medical devices, various inspection devices, various household appliances including a display area such as a refrigerator or a washing machine, an Internet of Things (IoT) device, etc. A typical example of the display device 1 to be described later may be a smart phone, a tablet PC, or a laptop computer, but the display device 1 according to the embodiment is not limited thereto.

[0052] The display device 1 may include a display panel 10 , a driving circuit 20 , a circuit board 30 , and a readout circuit 40 (eg, a readout IC).

[0053] The display panel 10 may include an active area AA and a non-active area NA. In an embodiment, the display panel 10 may be formed to be partially or completely flexible and may be deformed to be folded, bent, or curled in at least a portion. For example, the display panel 10 may be folded or bent in the non-active area NA so that a portion of the non-active area NA on which the drive circuit 20 and the like are mounted may be positioned on the opposite side of the display surface (e.g., the rear surface side of the display device 1).

[0054] The active area AA may include the display area. For example, the active area AA may completely overlap with the display area. Pixels (e.g., Figure 2 or Figure 3 The pixels PX) may be arranged in the active area AA (or the display area). Each pixel PX may include a light emitting element (eg, Figure 5 light-emitting element EL).

[0055] The active area AA may also include a sensing area that responds to light. For example, the active area AA may also include a sensing area (e.g., a light sensing area) for sensing the amount or wavelength of incident light. In an embodiment, the sensing area may include a fingerprint sensing area for sensing a user's fingerprint using an optical sensor.

[0056] In an embodiment, the sensing area may overlap with the display area. For example, the sensing area may be a portion of the display area, or may be an area substantially the same as the display area. In this case, the sensing area may be a portion of the active area AA, or may be the entire active area AA.

[0057] Optical sensors that respond to light (e.g. Figure 2 or Figure 3 The optical sensors PS) may be disposed in the sensing region. Each optical sensor may include a photoelectric conversion element (eg, Figure 5 The photoelectric conversion element PD can sense incident light and convert it into an electrical signal.

[0058] In an embodiment, the active area AA may include a first active area AA1 and a second active area AA2. Pixels and optical sensors may be disposed in the first active area AA1 and the second active area AA2.

[0059] For example, the first active area AA1 as a part of the active area AA may be an area located at least at the center of the active area AA. For example, the second active area AA2 as another part of the active area AA (e.g., another part other than the first active area AA1) may be an area located at an edge (e.g., a left edge or a right edge) of the active area AA.

[0060] The first active area AA1 may include a first optical sensor, which includes a corresponding photoelectric conversion element. For example, the first active area AA1 may include a first optical sensor (eg, Figure 6 and Figure 7 The first optical sensors PS1) are respectively provided at the light transmission part (eg, Figure 7 and Figure 8 The first photoelectric conversion element (for example, Figure 8 The first optical sensor may output a first sensing signal corresponding to the incident light, and may sense a user's input (eg, fingerprint input) provided in the first active area AA1 using the first sensing signal.

[0061] The second active area AA2 may include a second optical sensor including a corresponding photoelectric conversion element located below a light blocking portion that substantially blocks transmission of external light. For example, the second active area AA2 may include a second optical sensor (e.g., Figure 6 and Figure 7 The second optical sensors PS2) are respectively provided on the light blocking member (eg, Figure 7 and Fig. 9 The second photoelectric conversion element (eg, Fig. 9 The second photoelectric conversion element PD2) and color filters of at least two colors (for example, Figure 6 and Fig. 9 The first optical sensor includes a first color filter CF1 and a second color filter CF2. The second optical sensor may output a second sensing signal corresponding to noise caused by an electrical signal (e.g., a driving signal of the display panel 10) or internal light generated by the display panel 10. In an embodiment, the second sensing signal may be used to remove or reduce (e.g., subtract) noise included in the first sensing signal. Therefore, the performance of a light sensing unit (e.g., a fingerprint sensor) including the first optical sensor and the second optical sensor may be improved. For example, when sensing a fingerprint input provided in the first active area AA1 based on the first sensing signal, the second sensing signal is used to remove or reduce noise included in the first sensing signal, which enables it to sense the user's fingerprint more accurately.

[0062] The non-active area NA may include a non-display area and may be located around the active area AA. The non-active area NA may be located on at least one side of the active area AA and may partially or completely surround the active area AA. In an embodiment, the non-active area NA may be a frame area. Lines, pads, or drive circuits 20 electrically connected to pixels or optical sensors of the active area AA may be disposed in the non-active area NA.

[0063] The driving circuit 20 may be electrically connected to the pixels and the optical sensor of the active area AA to drive the pixels and the optical sensor. For example, the driving circuit 20 may generate a driving signal or a power voltage for driving the pixels and the optical sensor, and may output the driving signal or the power voltage to the pixels and the optical sensor. For example, the driving circuit 20 may have at least one of a gate driving circuit (or a part of a gate driving circuit) including a scan driver or a source driving circuit (or a part of a source driving circuit) including a data driver.

[0064] The driving circuit 20 may be formed as an integrated circuit (IC) and mounted on the display panel 10, or may be mounted on a circuit board 30 connected to the display panel 10. In an embodiment, the driving circuit 20 may be disposed outside the active area AA. In another embodiment, at least a portion of the driving circuit 20 (e.g., at least a portion of a scan driver) may be disposed within the active area AA and may be formed together with the pixel.

[0065] The circuit board 30 may be connected to or attached to one end of the display panel 10. For example, the circuit board 30 may be attached to one end of the display panel 10 using an anisotropic conductive film (ACF). Leads of the circuit board 30 may be electrically connected to a pad unit of the display panel 10. In an embodiment, the circuit board 30 may be a flexible film such as a flexible printed circuit board (FPCB) or a chip on film (COF).

[0066] The readout circuit 40 may be electrically connected to the optical sensor disposed in the active area AA. The readout circuit 40 may receive an electrical signal corresponding to the current flowing through the optical sensor. The readout circuit 40 may convert the electrical signal received from the optical sensor and transmit it to a processor connected to the readout circuit 40 (e.g., a processor disposed in the host device or the display device 1), or may perform a designated function based on the electrical signal.

[0067] In an embodiment, the readout circuit 40 may be formed as an integrated circuit (IC) and attached to the circuit board 30 by a chip on film (COF) method, but the embodiment is not limited thereto. For example, the readout circuit 40 may be attached to the non-active area NA of the display panel 10 by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.

[0068] Figure 2 is a block diagram of a display device 1 according to an embodiment.

[0069] Joint Figure 1 refer to Figure 2 , the display device 1 may include a display panel 10, a driving circuit 20, a readout circuit 40 and a processor 50. Figure 2 The embodiments in which the processor 50 is provided in the display device 1 are disclosed, but the embodiments are not limited thereto. For example, the processor 50 may be provided in a host device connected to the display device 1 .

[0070] The display panel 10 may include pixels PX and optical sensors PS disposed in the active area AA, scan lines SL and power voltage lines VL connected (e.g., electrically connected) to the pixels PX and the optical sensors PS, data lines DL and emission control lines EML connected to the pixels PX, and readout lines ROL connected to the optical sensors PS.

[0071] Each pixel PX may be connected to at least one scan line SL, any one data line DL, any one emission control line EML, and at least one power voltage line VL. In an embodiment, the pixel PX may be arranged Figure 1 In the first active area AA1 and the second active area AA2.

[0072] Each optical sensor PS may be connected to at least one scan line SL, any one readout line ROL, and at least one power voltage line VL. In an embodiment, the optical sensor PS may include a Figure 1 The first optical sensor in the first active area AA1 and the Figure 1 In an embodiment, the optical sensor PS may be disposed between the pixels PX and may be formed together with the pixels PX in the display panel 10. For example, the first optical sensor may be formed or disposed between the pixels PX located in the first active area AA1, and the second optical sensor may be formed or disposed between the pixels PX located in the second active area AA2.

[0073] The scan lines SL may connect the pixels PX and the optical sensors PS to the scan driver 23. The scan lines SL may transmit or provide scan signals output from the scan driver 23 to the pixels PX and the optical sensors PS.

[0074] The data lines DL may connect the pixels PX to the data driver 22. The data lines DL may transmit or provide corresponding data signals output from the data driver 22 to the pixels PX.

[0075] The emission control line EML may connect the pixel PX to the emission control driver 25. The emission control line EML may transfer or provide an emission control signal output from the emission control driver 25 to the pixel PX.

[0076] The readout line ROL may connect the optical sensor PS to the readout circuit 40. The readout line ROL may transmit or provide an electrical signal (e.g., a sensing current or a sensing signal) generated according to the photoelectric current output from the optical sensor PS to the readout circuit 40. Thus, the readout circuit 40 may sense the user's input (e.g., fingerprint input).

[0077] The power voltage line VL may connect the pixel PX and the optical sensor PS to the power supply unit 24. For example, the power voltage line VL may transmit or provide a first power voltage ELVDD, a second power voltage ELVSS (see Figure 5 ), or from the power supply unit 24 (see Figure 5 ) generates or outputs other power voltages to the pixels PX and the optical sensors PS. Figure 2 It is shown that one power voltage line VL is provided in the display panel 10 , but power voltage lines VL corresponding to the type or number of power voltages required to drive the pixels PX and the optical sensors PS may be provided or formed in the display panel 10 .

[0078] The driving circuit 20 may include a data driver 22 for driving the pixels PX, a scan driver 23 for driving the pixels PX and the optical sensors PS, and a timing controller 21 for controlling driving timings of the data driver 22 and the scan driver 23. In an embodiment, the driving circuit 20 may further include a power supply unit 24 for generating or transmitting a power voltage for driving the pixels PX and the optical sensors PS, or an emission control driver 25 for driving the pixels PX.

[0079] The timing controller 21 may receive the image signal RGB and the control signal CTS from the processor 50. The timing controller 21 may output the image data DATA, the data control signal DCS, the scan control signal SCS, and the emission control driving signal ECS based on the image signal RGB and the control signal CTS. The image data DATA and the data control signal DCS may be provided to the data driver 22. The scan control signal SCS and the emission control driving signal ECS may be provided to the scan driver 23 and the emission control driver 25, respectively.

[0080] In an embodiment, the control signal CTS may include a first mode control signal MO1 and a second mode control signal MO2. The timing controller 21 may generate a first data control signal DCS1 when the first mode control signal MO1 is provided, and may generate a second data control signal DCS2 when the second mode control signal MO2 is provided.

[0081] The data driver 22 may generate a data signal corresponding to the image data DATA and may output the data signal to the data line DL. For example, the data driver 22 may convert the image data DATA into analog data voltages and may output them to the data line DL. The data signal may be provided to the pixel PX through the data line DL.

[0082] The scan driver 23 may generate a scan signal in response to the scan control signal SCS, and may output the scan signal to the scan line SL. The scan signal may be provided to the pixel PX and the optical sensor PS through the scan line SL.

[0083] The power supply unit 24 may generate at least one power voltage for driving the pixels PX and the optical sensor PS, and may output the at least one power voltage to at least one power voltage line VL. The at least one power voltage may be provided to the pixels PX and the optical sensor PS through the power voltage line VL.

[0084] The emission control driver 25 may generate an emission control signal in response to the emission control driving signal ECS and may output the emission control signal to the emission control line EML. The emission control driver 25 may be formed or disposed separately from the scan driver 23 or may be formed or disposed while being integrated with the scan driver 23.

[0085] The readout circuit 40 may be connected to each optical sensor PS through a readout line ROL, and may receive a current that may flow through each optical sensor PS and sense a fingerprint input of a user. The readout circuit 40 may generate digital sensing data according to the magnitude of the current sensed by each optical sensor PS, and transmit it to the processor 50, and the processor 50 may analyze the digital sensing data to determine whether a preset fingerprint matches the fingerprint of the user by comparing the two fingerprints. When the preset fingerprint and the digital sensing data transmitted from the readout circuit 40 are the same, a preset function may be executed.

[0086] The processor 50 may provide an image signal RGB and a control signal CTS provided from the outside to the timing controller 21. The processor 50 may also include a graphics processing unit (hereinafter, referred to as a GPU) that provides graphics for the image signal RGB. The image signal RGB, which is an image source that has undergone graphics processing in the GPU, may be provided to the timing controller 21. For example, the image signal RGB may have a frequency of 120 Hz or 30 Hz.

[0087] The control signal CTS output from the processor 50 may include a first mode control signal MO1, a second mode control signal MO2, a clock signal, an enable signal, etc. The first mode control signal MO1 may include a display mode signal for displaying a normal image. The second mode control signal MO2 may include a sensing mode signal for sensing a user's fingerprint, etc. In an embodiment, the second mode control signal MO2 may be a signal that causes at least some pixels PX (e.g., green pixels) to emit light during a period of performing a sensing mode. Therefore, when the pixel PX is used as a light source, a user's fingerprint, etc. may be sensed.

[0088] The processor 50 may provide the first mode control signal MO1 to the timing controller 21 so as to display an image on the display panel 10. The processor 50 may provide the second mode control signal MO2 to the timing controller 21 so as to sense a user's fingerprint, etc. The timing controller 21 may drive the pixels PX and the optical sensor PS of the display panel 10 in response to the second mode control signal MO2.

[0089] Figure 3 2 is a cross-sectional view illustrating a schematic cross section of an active area AA of a display device 1 and a method for sensing a fingerprint of a finger F according to an embodiment. Figure 3A method for sensing a fingerprint of a finger F located on the first active area AA1 is shown.

[0090] Joint Figure 1 and Figure 2 refer to Figure 3 The display device 1 may include a display panel 10 and a window WDL disposed on the display panel 10. The display panel 10 may include a substrate SUB, a display layer DPL disposed on the substrate SUB, and an encapsulation layer ENL and a color filter layer CFL disposed on the display layer DPL.

[0091] The display layer DPL may include pixels PX and optical sensors PS disposed on a substrate SUB. The substrate SUB may include an active area AA and a non-active area NA, and the pixels PX and optical sensors PS may be disposed on the substrate SUB to be located in the active area AA.

[0092] To keep it simple, Figure 3 An embodiment is shown in which pixels PX and optical sensors PS are alternately arranged one after another along at least one direction (e.g., a first direction DR1 or a second direction DR2 intersecting a third direction DR3), but the arrangement structure, number, or resolution of the pixels PX and optical sensors PS may be changed differently depending on the embodiment.

[0093] The encapsulation layer ENL may be disposed on the display layer DPL to cover at least the pixels PX and the optical sensors PS. The encapsulation layer ENL may protect the pixels PX and the optical sensors PS.

[0094] The color filter layer CFL may include a light blocking member LS and a color filter CF located above the pixel PX and the optical sensor PS. In an embodiment, the color filter layer CFL may further include a first overcoat layer OC1 covering the light blocking member LS and the color filter CF.

[0095] The light blocking member LS may be disposed above the display layer DPL (e.g., above the encapsulation layer ENL covering the display layer DPL) to be located between the pixel PX and the optical sensor PS, and may be disposed at a boundary thereof. The light blocking member LS may include an opening that exposes at least a portion of the pixel PX. In addition, the light blocking member LS may include an opening that exposes at least a portion of some of the optical sensors PS (e.g., the first optical sensor located in the first active area AA1). In an embodiment, the light blocking member LS may be disposed above some other optical sensors of the optical sensors PS (e.g., the second optical sensor located in the second active area AA2) to block external light from being incident on some other optical sensors of the optical sensors PS.

[0096] The color filter CF may be located at least in the active area AA to overlap with the pixel PX and the optical sensor PS. The color filter CF may be disposed above each pixel PX to correspond to the color (or wavelength band) of light emitted from the corresponding pixel PX. In an embodiment, a color filter CF of a specific color (e.g., a green color filter) may be disposed above the optical sensor PS located in the first active area AA1, and color filters CF of at least two colors (e.g., red and blue color filters) may be disposed above the optical sensor PS located in the second active area AA2.

[0097] The window WDL may be disposed over the display panel 10 to protect the display panel 10. For example, the window WDL may be disposed on a display surface of the display panel 10.

[0098] When the user's finger F (e.g., a portion of the finger F including the fingerprint area) contacts the top surface of the window WDL, light emitted from the pixel PX of the display panel 10 may be reflected from the ridge RID of the finger F and the valley VAL between the ridge RID. The portion corresponding to the ridge RID of the finger F may contact the top surface of the window WDL, while the portion corresponding to the valley VAL of the finger F may not contact the window WDL. Therefore, the top surface of the window WDL may contact the air at the portion corresponding to the valley VAL of the finger F.

[0099] Since the refractive index of the finger F is different from the refractive index of the air, the amount of light reflected from the ridge RID and the amount of light reflected from the valley VAL may be different. Therefore, the shape of the fingerprint formed on the finger F can be obtained based on the difference in the amount of light reflected from the finger F and incident on each of the optical sensors PS. For example, each optical sensor PS may output an electrical signal corresponding to the amount of received light (e.g., a photoelectric current or a sensing signal corresponding to the photoelectric current), and the shape of the fingerprint formed on the finger F may be recognized using the electrical signal output from the optical sensor PS.

[0100] Figure 4 2 is a cross-sectional view illustrating a schematic cross section of an active area AA of a display device 1 and a method for sensing a fingerprint of a finger F according to an embodiment.

[0101] refer to Figure 4 , the display device 1 may further include a touch sensor layer TSL. In an embodiment, the touch sensor layer TSL may be disposed within the display panel 10. For example, the touch sensor layer TSL may be disposed between the encapsulation layer ENL and the color filter layer CFL, and may be formed directly on the encapsulation layer ENL. The position of the touch sensor layer TSL is not limited thereto and may vary according to the embodiment.

[0102] The touch sensor layer TSL may include a sensing pattern TSE for sensing a user's touch input (e.g., a touch electrode for generating an electrical signal according to the touch input), and a second cover layer OC2 covering the sensing pattern TSE. The type, structure, and material of the sensing pattern TSE provided in the touch sensor layer TSL may be variously changed according to the embodiment.

[0103] The display device 1 may sense a touch input provided to a user on the display surface side (eg, the top surface of the window WDL) using the touch sensor layer TSL. Figure 4 Other components of the display device 1 and the method of sensing the fingerprint of the finger F using the optical sensor PS according to the embodiment of the present invention are the same as those according to Figure 3 The display devices 1 of the embodiments are substantially similar or identical to those of the display devices 1 , and thus a detailed description thereof will be omitted.

[0104] Figure 5 is a circuit diagram of a pixel PX and an optical sensor PS according to an embodiment.

[0105] Figure 5 Disclosed is an embodiment in which the scan line SL connected to each pixel PX includes a scan initialization line GIL, a scan control line GCL, a first scan line GWL, and a first_first scan line GWL_1. In an embodiment, the scan line SL may further include a reset control line RSTL connected to at least one optical sensor PS.

[0106] In an embodiment, the reset control line RSTL may be integrated with one of the scan initialization line GIL, the scan control line GCL, and the first_first scan line GWL_1, or may be separated from the scan initialization line GIL, the scan control line GCL, and the first_first scan line GWL_1 and receive a separate reset signal. In an embodiment, the reset signal may be sequentially applied to the optical sensors PS divided in units of at least one row or in units of blocks, or may be simultaneously applied to the optical sensors PS disposed in the active area AA. For example, the optical sensors PS may be reset sequentially or simultaneously.

[0107] In an embodiment, the optical sensor PS may be driven using at least one of the scan signals transmitted to the scan lines SL for driving the pixels PX For example, the optical sensor PS may be driven using the first scan signal transmitted to the first scan lines GWL.

[0108] refer to Figure 5 , the pixel PX may include a light emitting element EL and a pixel driver PDU (eg, a pixel circuit) connected to the light emitting element EL.

[0109] The light emitting element EL may be connected between a second driving voltage line VSL to which a second power voltage ELVSS is applied and a pixel driver PDU. The light emitting element EL as a light source of the pixel PX may emit light in response to a driving current provided from the pixel driver PDU. As the driving current increases, the light emitting element EL may emit light with high brightness.

[0110] In an embodiment, the light emitting element EL may be an organic light emitting diode, but is not limited thereto. For example, the light emitting element EL may be an inorganic light emitting element, a quantum dot light emitting element, or other types of light emitting elements.

[0111] The pixel driver PDU can control the light emission timing and brightness of the light emitting element EL by controlling the driving current provided to the light emitting element EL. The pixel driver PDU may include a driving transistor DT, a switching element and a capacitor Cst. In an embodiment, the switching element may include a first transistor T1, a second transistor T2, a third transistor T3, a fourth transistor T4, a fifth transistor T5 and a sixth transistor T6.

[0112] The driving transistor DT may include a gate electrode, a first electrode, and a second electrode. One of the first electrode and the second electrode may be a source electrode, and the other may be a drain electrode. The driving transistor DT may control a drain-source current (hereinafter, referred to as a "driving current") flowing between the first electrode and the second electrode according to a voltage of a data signal applied to the gate electrode.

[0113] The first transistor T1 may include a gate electrode connected to the first scan line GWL, a first electrode connected to the data line DL, and a second electrode connected to the first electrode of the driving transistor DT. The first transistor T1 may be turned on by a first scan signal supplied to the first scan line GWL to connect the first electrode of the driving transistor DT to the data line DL. When the first transistor T1 is turned on, a voltage of a data signal supplied to the data line DL may be applied to the first electrode of the driving transistor DT.

[0114] The second transistor T2 may include a gate electrode connected to a scan control line GCL, a first electrode connected to a second electrode of the driving transistor DT, and a second electrode connected to the gate electrode (or second node N2) of the driving transistor DT. The second transistor T2 may be turned on by a scan control signal supplied to the scan control line GCL to connect the gate electrode of the driving transistor DT to the second electrode of the driving transistor DT. When the gate electrode of the driving transistor DT is connected to its second electrode, the driving transistor DT may be driven as a diode.

[0115] The third transistor T3 may include a gate electrode connected to the scan initialization line GIL, a first electrode connected to the gate electrode of the driving transistor DT, and a second electrode connected to the first initialization voltage line VIL1. The third transistor T3 may be turned on by a scan initialization signal supplied to the scan initialization line GIL to connect the gate electrode of the driving transistor DT to the first initialization voltage line VIL1. When the third transistor T3 is turned on, the first initialization voltage VINT of the first initialization voltage line VIL1 may be applied to the gate electrode of the driving transistor DT.

[0116] The fourth transistor T4 may include a gate electrode connected to the emission control line EML, a first electrode connected to the first driving voltage line VDL, and a second electrode connected to the first electrode of the driving transistor DT. The fourth transistor T4 may be turned on by an emission control signal supplied to the emission control line EML to connect the first electrode of the driving transistor DT to the first driving voltage line VDL to which the first power voltage ELVDD is applied. When the fourth transistor T4 is turned on, the first power voltage ELVDD may be applied to the first electrode of the driving transistor DT.

[0117] The fifth transistor T5 may include a gate electrode connected to the emission control line EML, a first electrode connected to the second electrode of the driving transistor DT, and a second electrode connected to the light emitting element EL. The fifth transistor T5 may be turned on by an emission control signal supplied to the emission control line EML to connect the driving transistor DT to the light emitting element EL. When both the fourth transistor T4 and the fifth transistor T5 are turned on, a driving current according to a voltage of the gate electrode of the driving transistor DT may flow through the light emitting element EL.

[0118] The sixth transistor T6 may include a gate electrode connected to the first_first scan line GWL_1, a first electrode connected to the anode electrode of the light emitting element EL, and a second electrode connected to the second initialization voltage line VIL2. The sixth transistor T6 may be turned on by the first_first scan signal supplied to the first_first scan line GWL_1 to connect the anode electrode of the light emitting element EL to the second initialization voltage line VIL2. When the sixth transistor T6 is turned on, the second initialization voltage VAINT of the second initialization voltage line VIL2 may be applied to the anode electrode of the light emitting element EL.

[0119] The capacitor Cst may be connected between the gate electrode of the driving transistor DT and the first driving voltage line VDL. The capacitor Cst may store a voltage corresponding to a voltage of a data signal applied to the gate electrode of the driving transistor DT.

[0120] The active layer (e.g., a semiconductor pattern including a channel region) of each of the driving transistor DT and the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be formed of one of polycrystalline silicon, amorphous silicon, and an oxide semiconductor. In an embodiment, the active layer of each of the driving transistor DT, the first transistor T1, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be made of polycrystalline silicon. The active layer of each of the second transistor T2 and the third transistor T3 may be formed of an oxide semiconductor. In this case, the driving transistor DT, the first transistor T1, the fourth transistor T4, the fifth transistor T5, and the sixth transistor T6 may be formed of a P-type MOSFET, and the second transistor T2 and the third transistor T3 may be formed of an N-type MOSFET.

[0121] The optical sensor PS may include a photoelectric conversion element PD and a sensing driver SDU (eg, an optical sensor circuit) for controlling a sensing current according to a photocurrent of the photoelectric conversion element PD.

[0122] The photoelectric conversion element PD may be connected between the sensing driver SDU and the second driving voltage line VSL. The photoelectric conversion element PD may be a photodiode including an anode electrode, a cathode electrode, and a photoelectric conversion layer disposed between the anode electrode and the cathode electrode. The photoelectric conversion element PD may convert external incident light into an electrical signal. In an embodiment, the photoelectric conversion element PD may be an inorganic photodiode or a phototransistor formed of a PN-type or PIN-type inorganic material. Alternatively, the photoelectric conversion element PD may also be an organic photodiode including an electron-donating material that generates donor ions and an electron-accepting material that generates acceptor ions.

[0123] When the photoelectric conversion element PD is exposed to external light, photocharges may be generated, and the generated photocharges may be accumulated in the anode electrode of the photoelectric conversion element PD. In this case, the voltage of the first node N1 electrically connected to the anode electrode of the photoelectric conversion element PD may increase. When the photoelectric conversion element PD and the readout line ROL are connected according to the conduction of the first sensing transistor LT1 and the third sensing transistor LT3, the sensing voltage may be accumulated at the third node N3 between the readout line ROL and the third sensing transistor LT3 in proportion to the voltage of the first node N1 in which the charge is accumulated.

[0124] The sensing driver SDU may include a sensing transistor for controlling a sensing current generated by the photoelectric conversion element PD. For example, the sensing driver SDU may include a first sensing transistor LT1, a second sensing transistor LT2, and a third sensing transistor LT3.

[0125] The first sensing transistor LT1 may include a gate electrode connected to the first node N1, a first electrode connected to the second initialization voltage line VIL2, and a second electrode connected to the first electrode of the third sensing transistor LT3. The first sensing transistor LT1 may be turned on by the voltage of the first node N1 to connect the second initialization voltage line VIL2 to the first electrode of the third sensing transistor LT3. The first sensing transistor LT1 may be a source follower amplifier that generates a source-drain current proportional to the amount of charge of the first node N1 input to its gate electrode. Figure 5 An embodiment in which the first electrode of the first sensing transistor LT1 is connected to the second initialization voltage line VIL2 is disclosed, but the embodiment is not limited thereto. For example, the first electrode of the first sensing transistor LT1 may be connected to the first driving voltage line VDL or the first initialization voltage line VIL1.

[0126] The second sensing transistor LT2 may include a gate electrode connected to a reset control line RSTL, a first electrode connected to a reset voltage line VRL, and a second electrode connected to a first node N1. The second sensing transistor LT2 may be turned on by a reset control signal supplied to the reset control line RSTL to connect the reset voltage line VRL to which a reset voltage Vrst is applied to the first node N1. When the second sensing transistor LT2 is turned on, a voltage of the first node N1 may be initialized by the reset voltage Vrst.

[0127] The third sensing transistor LT3 may include a gate electrode connected to the first scan line GWL, a first electrode connected to the second electrode of the first sensing transistor LT1, and a second electrode connected to the readout line ROL. The third sensing transistor LT3 may be turned on by a first scan signal supplied to the first scan line GWL to connect the second electrode of the first sensing transistor LT1 and the readout line ROL. When the third sensing transistor LT3 is turned on, an electrical signal corresponding to the photoelectric current flowing through the optical sensor PS may be transmitted to the readout circuit 40 through the readout line ROL.

[0128] The active layer of each of the first sensing transistor LT1, the second sensing transistor LT2, and the third sensing transistor LT3 may be formed of one of polysilicon, amorphous silicon, and an oxide semiconductor. In an embodiment, the active layer of the first sensing transistor LT1 and the third sensing transistor LT3 may be made of polysilicon. The active layer of the second sensing transistor LT2 may be formed of an oxide semiconductor. In this case, the first sensing transistor LT1 and the third sensing transistor LT3 may be formed of a P-type MOSFET, and the second sensing transistor LT2 may be formed of an N-type MOSFET.

[0129] Figure 6is a plan view showing an arrangement structure of pixels PX, optical sensors PS, and color filters CF according to an embodiment. Figure 7 is a plan view showing a pixel PX, an optical sensor PS, and a light blocking member LS according to an embodiment. Figure 6 and Figure 7 shows the configuration of the active area AA and Figure 1 The pixels PX, the optical sensor PS, the color filter CF, and the light blocking member LS in the portion corresponding to the first area AR1.

[0130] Joint Figures 1 to 5 refer to Figure 6 and Figure 7 , the pixel PX may include a first color pixel (also referred to as a "first pixel") PX1 that emits light of a first color, a second color pixel (also referred to as a "second pixel") PX2 that emits light of a second color, and a third color pixel (also referred to as a "third pixel") PX3 that emits light of a third color. In an embodiment, the first color pixel PX1 may be a red pixel that emits red light, the second color pixel PX2 may be a blue pixel that emits blue light, and the third color pixel PX3 may be a green pixel that emits green light. However, the embodiment is not limited thereto, and the type and configuration of the pixel PX and the color of light emitted from each pixel PX may vary according to the embodiment.

[0131] In an embodiment, at least one first color pixel PX1, at least one second color pixel PX2, and at least one third color pixel PX3 disposed adjacent to each other in one unit pixel area UPXA may constitute one unit pixel. For example, one first color pixel PX1, one second color pixel PX2, and two third color pixels PX3 disposed in each unit pixel area UPXA may constitute one unit pixel. Each unit pixel may be defined as a minimum unit pixel PX for displaying white light. Various colors may be presented by adjusting the luminous ratio of the pixel PX included in each unit pixel.

[0132] In an embodiment, in each pixel column, the first color pixel PX1 and the second color pixel PX2 may be arranged alternately, or the third color pixel PX3 may be provided. In an embodiment, an optical sensor PS (e.g., the first optical sensor PS1 or the second optical sensor PS2) may be provided in each pixel column in which the third color pixel PX3 is provided. The optical sensor PS may be provided to have the same resolution as that of the pixel PX, or may be provided to have a resolution different from that of the pixel PX. The shape, arrangement structure, resolution, etc. of the pixel PX and the optical sensor PS are not limited to Figure 6 The embodiments shown in FIG. 1 and may be variously changed depending on the embodiments.

[0133] The pixel PX may include a corresponding emission area EA (or a light emitting unit including a corresponding light emitting element EL). For example, the first color pixel PX1 may include a first emission area EA1 that emits a first light of a first color (e.g., red light of a wavelength band of about 600nm to 750nm), and the second color pixel PX2 may include a second emission area EA2 that emits a second light of a second color (e.g., blue light of a wavelength band of about 370nm to 460nm). The third color pixel PX3 may include a third emission area EA3 that emits a third light of a third color (e.g., green light of a wavelength band of about 480nm to 560nm).

[0134] For simplicity, Figure 6 , the position of the corresponding pixel PX is presented relative to the emission area EA of each pixel PX, but the pixel PX may have an area larger than the area of ​​the emission area EA. For example, the pixel area where each pixel PX is set or formed may include a pixel circuit area of ​​a pixel driver PDU forming the corresponding pixel PX and an emission area EA of a light-emitting element EL, etc. forming the corresponding pixel PX. In an embodiment, according to the luminous efficiency or white balance of the first color pixel PX1, the second color pixel PX2, or the third color pixel PX3, the first color pixel PX1, the second color pixel PX2, or the third color pixel PX3 may include an emission area EA having a different size (e.g., a different area), but the embodiment is not limited thereto.

[0135] The color filter CF may be disposed in the emission area EA of the pixel PX (or the light-emitting unit including the corresponding light-emitting element EL) and its surrounding area. For example, a first color filter CF1 for selectively transmitting a first light of a first color may be disposed in a first emission area EA1 of the first color pixel PX1, and a second color filter CF2 for selectively transmitting a second light of a second color may be disposed in a second emission area EA2 of the second color pixel PX2. A third color filter CF3 for selectively transmitting a third light of a third color may be disposed in a third emission area EA3 of the third color pixel PX3. In an embodiment, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be a red filter, a blue filter, and a green filter, respectively.

[0136] The first optical sensor PS1 may be disposed in the first active area AA1. For example, the first optical sensor PS1 may be disposed between pixels PX disposed in the first active area AA1. In an embodiment, the first optical sensor PS1 may be disposed in a pixel column in which the third color pixel PX3 is disposed in the first active area AA1.

[0137] The first optical sensor PS1 may include a corresponding first sensing area SA1. The photoelectric conversion element PD (eg, Figure 8 The first photoelectric conversion element PD1) may be disposed in the first sensing area SA1 of each of the first optical sensors PS1.

[0138] Each of the first sensing areas SA1 may include a light transmitting portion through which external light may be transmitted. Each of the first optical sensors PS1 may output a first sensing signal according to the amount of received light (eg, the amount of light incident on the first photoelectric conversion element PD1).

[0139] In an embodiment, any one color filter CF may be disposed in the first sensing area SA1 (or the sensing unit including the first photoelectric conversion element PD1) of each of the first optical sensors PS1. For example, the third color filter CF3 may be disposed above the first optical sensor PS1. In this case, the first optical sensor PS1 may sense the third light of the third color, and may output a first sensing signal according to the amount of light received.

[0140] In an embodiment, the first optical sensors PS1 may constitute a fingerprint sensor disposed in the first active area AA1. For example, each of the first optical sensors PS1 may be a sensing pixel of a fingerprint sensor.

[0141] The second optical sensor PS2 may be disposed in the second active area AA2. For example, the second optical sensor PS2 may be disposed between pixels PX disposed in the second active area AA2. In an embodiment, the second optical sensor PS2 may be disposed in a pixel column in which the third color pixel PX3 is disposed in the second active area AA2.

[0142] The second optical sensor PS2 may include a corresponding second sensing area SA2. Fig. 9 The second photoelectric conversion element PD2) may be disposed in the second sensing area SA2 of each of the second optical sensors PS2.

[0143] In an embodiment, a light blocking layer (eg, Fig. 9 The first light blocking layer LBL1 or Fig.11 A second light blocking layer LBL2 may be provided in each of the second sensing areas SA2. For example, at least an upper portion of the photoelectric conversion element PD may be shielded by the light blocking member LS and the color filter CF, thereby substantially preventing external light from being incident on the second optical sensor PS2.

[0144] In an embodiment, in the second sensing area SA2 (or the sensing unit including the photoelectric conversion element PD) of each of the second optical sensors PS2, the light blocking member LS and the color filters CF of at least two different colors may be arranged to overlap each other. Each of the color filters CF arranged in each second sensing area SA2 may be formed integrally with the color filter CF of a specific color arranged in at least one adjacent pixel PX, or may be formed separately from the color filter CF arranged in the pixel PX.

[0145] In an embodiment, a combination of at least two color filters CF disposed in the second sensing area SA2 may be a combination of color filters CF having the same type as the color filter CF of the pixel PX and having a light transmittance (e.g., light transmittance of external light) less than or equal to a reference value. For example, in the second sensing area SA2, the light blocking member LS, the first color filter CF1, and the second color filter CF2 may be disposed above the second optical sensor PS2 to overlap with each other. For example, the light blocking member LS, the red color filter, and the blue color filter may be disposed to overlap on the photoelectric conversion element PD of the second optical sensor PS2. Therefore, the second optical sensor PS2 may effectively shield external light so that the light transmittance of the second sensing area SA2 satisfies the reference value range (e.g., 0.0001% or less).

[0146] Each of the second optical sensors PS2 may output a second sensing signal (e.g., a second sensing current) corresponding to noise caused by an electrical signal or light generated within the display panel 10. For example, when noise caused by an electrical signal or internal light of the display panel 10 is introduced, the second optical sensor PS2 may output a second sensing signal corresponding to the noise.

[0147] In an embodiment, the second sensing signal can be used to calibrate the first sensing signal by removing or reducing the noise included in the first sensing signal. For example, by subtracting the second sensing signal from the first sensing signal, the first sensing signal can be calibrated, and the intensity or wavelength of the external light can be more accurately sensed. For example, when a fingerprint sensor is configured to sense a user's fingerprint in the first effective area AA1 using the first optical sensor PS1, the second optical sensor PS2 can be a reference sensing pixel or a noise sensing pixel for increasing the sensitivity of the fingerprint sensor. In this case, the display device 1 may include a calibration unit (or a noise removal unit) for receiving the first sensing signal and the second sensing signal (or the digitally converted first sensing signal and the second sensing signal), and generating an output sensing signal corresponding to the difference between the first sensing signal and the second sensing signal.

[0148] In an embodiment, a sensing signal corresponding to the difference between the first sensing signal and the second sensing signal may be obtained from Figure 2In another embodiment, Figure 2 The readout circuit 40 may output sensing signals corresponding to the first sensing signal and the second sensing signal, respectively (e.g., sensing signals obtained by converting the first sensing signal and the second sensing signal into digital signals), and a processor (e.g., Figure 2 The processor 50 of the host device or the processor of the host device may remove or reduce noise included in the first sensing signal based on the difference between the first sensing signal and the second sensing signal.

[0149] The light blocking member LS may be located between the pixels PX and in the non-emission region corresponding to the edge, and may be opened to expose the emission region EA of the pixel PX and the first sensing region SA1 of the first optical sensor PS1. For example, the light blocking member LS may be disposed in the active region AA including the first active region AA1 and the second active region AA2, and may include a first opening OPN1 corresponding to the emission region EA of the pixel PX and a second opening OPN2 corresponding to the first sensing region SA1 of the first optical sensor PS1. The first opening OPN1 may expose the light emitting element EL (e.g., Figure 8 and Fig. 9 The second opening OPN2 may expose at least a portion of the photoelectric conversion element PD (eg, Figure 8 at least a portion of the first photoelectric conversion element PD1).

[0150] The light blocking member LS may block external light from being incident on the second optical sensor PS2 by covering the second sensing area SA2 of the second optical sensor PS2. For example, the light blocking member LS may be disposed in the second sensing area SA2 to cover the photoelectric conversion element PD (e.g., Fig. 9 For example, the light blocking member LS may be disposed above the photoelectric conversion element PD in the second sensing area SA2 to completely cover the photoelectric conversion element PD disposed in the second sensing area SA2.

[0151] Figure 8 It is shown along Figure 6 and Figure 7 A cross-sectional view of an example of a cross section taken along line II'. Fig. 9 It is shown along Figure 6 and Figure 7 A cross-sectional view of an example of a cross-section taken along line II-II'.

[0152] Joint Figures 1 to 7 refer to Figure 8 and Fig. 9 , the substrate SUB as a base member (or base layer) of the display panel 10 may be rigid or flexible. In an embodiment, the substrate SUB may be one of a glass substrate, a quartz substrate, a glass ceramic substrate, a film substrate including a polymeric organic material, and a plastic substrate. In an embodiment, the substrate SUB may include fiberglass reinforced plastic (FRP).

[0153] The active area AA and the non-active area NA may be defined on the substrate SUB. The active area AA may include a first active area AA1 and a second active area AA2. The pixel PX and the first optical sensor PS1 may be located in the first active area AA1 on the substrate SUB, and the pixel PX and the second optical sensor PS2 may be located in the second active area AA2 on the substrate SUB.

[0154] The panel circuit layer TFTL (e.g., pixel circuit layer or thin film transistor layer) may be disposed on the substrate SUB. The panel circuit layer TFTL may include a barrier layer 110 (or a buffer layer), a first thin film transistor TFT1 disposed in each pixel PX, and a second thin film transistor TFT2 disposed in each optical sensor PS. For example, the first thin film transistor TFT1 may be Figure 5 The driving transistor DT or one of the first to sixth transistors T1 to T6, and the second thin film transistor TFT2 may be Figure 5 The panel circuit layer TFTL may further include other circuit elements (e.g., other transistors and capacitor Cst) included in the pixel driver PDU of each pixel PX, other circuit elements (e.g., other sensing transistors) included in the sensing driver SDU of each optical sensor PS, and lines connected to the pixels PX and the optical sensors PS.

[0155] The barrier layer 110 may be disposed on the substrate SUB and may include silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0156] The active layer (or semiconductor pattern) of each of the thin film transistors TFT may be disposed on the barrier layer 110. The active layer may include polycrystalline silicon, single crystal silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. The oxide semiconductor may include, for example, a binary compound (AB) including indium, zinc, gallium, tin, titanium, aluminum, hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. x ), ternary compounds (AB x C y ) or quaternary compound (ABx C y D z ).

[0157] The active layer of the first thin film transistor TFT1 may include a first channel region A1, and a first source region S1 and a first drain region D1 doped with impurities and having conductivity. The first channel region A1 may overlap with the first gate electrode G1 in a third direction DR3, which is a thickness direction of the substrate SUB. The first source region S1 and the first drain region D1 may not overlap with the first gate electrode G1.

[0158] The active layer of the second thin film transistor TFT2 may include a second channel region A2, and a second source region S2 and a second drain region D2 doped with impurities and having conductivity. The first channel region A1 may overlap with the second gate electrode G2 in a third direction DR3, which is a thickness direction of the substrate SUB. The second source region S2 and the second drain region D2 may not overlap with the second gate electrode G2.

[0159] The first insulating layer 120 (eg, a gate insulating layer) may be disposed on the active layer of the thin film transistor TFT. In an implementation, the first insulating layer 120 may include an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0160] The gate electrode of each of the thin film transistors TFT may be disposed on the first insulating layer 120. For example, the first gate electrode G1 of the first thin film transistor TFT1 and the second gate electrode G2 of the second thin film transistor TFT2 may be disposed on the first insulating layer 120. In an embodiment, the gate electrode may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but is not limited thereto.

[0161] In an embodiment, Figure 5 A first electrode or at least one line of the capacitor Cst may be further disposed on the first insulating layer 120 .

[0162] The second insulating layer 130 (eg, a first interlayer insulating layer) may be disposed on the gate electrode of the thin film transistor TFT. In an implementation, the second insulating layer 130 may include an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0163] In an embodiment, Figure 5 A second electrode or at least one line of the capacitor Cst may be disposed on the second insulating layer 130 .

[0164] The third insulating layer 140 (e.g., a second interlayer insulating layer) may be disposed on the second insulating layer 130 or the second electrode of the capacitor Cst. In an embodiment, the third insulating layer 140 may include the same material as the second insulating layer 130. In another embodiment, the second electrode of the capacitor Cst may be disposed on the same layer as the first anode connection electrodes ANE11 and ANE21, and the third insulating layer 140 may be omitted.

[0165] The first anode connection electrodes ANE11 and ANE21 may be disposed on the third insulating layer 140. The first anode connection electrodes ANE11 and ANE21 may be connected to the drain regions D1 and D2 (or the source regions S1 and S2) of the corresponding thin film transistors TFT through corresponding contact holes penetrating the first insulating layer 120, the second insulating layer 130, and the third insulating layer 140. In an embodiment, the first anode connection electrodes ANE11 and ANE21 may include any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof, but are not limited thereto.

[0166] A fourth insulating layer 151 (e.g., a first planarization layer) may be disposed on the first anode connection electrodes ANE11 and ANE21. The fourth insulating layer 151 may planarize a stepped portion formed by the thin film transistor TFT. In an embodiment, the fourth insulating layer 151 may include an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, or the like.

[0167] The second anode connection electrodes ANE12 and ANE22 may be disposed on the fourth insulating layer 151. The second anode connection electrodes ANE12 and ANE22 may be connected to the first anode connection electrodes ANE11 and ANE21, respectively, through contact holes penetrating the fourth insulating layer 151. In an embodiment, the second anode connection electrodes ANE12 and ANE22 may include the same material as the first anode connection electrodes ANE11 and ANE21.

[0168] A fifth insulating layer 153 (eg, a second planarization layer) may be disposed on the second anode connection electrodes ANE12 and ANE22 . In an implementation, the fifth insulating layer 153 may include the same material as the fourth insulating layer 151 .

[0169] The photoelectric element layer PEL may be disposed on the fifth insulating layer 153. The photoelectric element layer PEL may include a light emitting element EL of each of the pixels PX, a photoelectric conversion element PD of each of the optical sensors PS (e.g., a first photoelectric conversion element PD1 of the first optical sensor PS1 and a second photoelectric conversion element PD2 of the second optical sensor PS2), and a bank 160. Each light emitting element EL may include a pixel electrode 171, a light emitting layer 173, and a common electrode 180, and each photoelectric conversion element PD may include a first electrode 175, a photoelectric conversion layer 177, and a common electrode 180. The light emitting element EL and the photoelectric conversion element PD may share the common electrode 180.

[0170] The pixel electrode 171 of the light emitting element EL may be disposed on the fifth insulating layer 153. The pixel electrode 171 may be provided for each pixel PX. The pixel electrode 171 may be connected to the second anode connection electrode ANE12 through a contact hole penetrating the fifth insulating layer 153.

[0171] In an embodiment, the pixel electrode 171 of the light emitting element EL may have a single-layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may have a stacked-layer structure including, for example, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In 2 O 3 ) and silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au) or nickel (Ni) multilayer structures of ITO / Mg, ITO / MgF, ITO / Ag and ITO / Ag / ITO.

[0172] In addition, the first electrode 175 of the photoelectric conversion element PD may be disposed on the fifth insulating layer 153. The first electrode 175 may be provided for each optical sensor PS. For example, the first electrode 175 of the first photoelectric conversion element PD1 may be provided in the first sensing area SA1 of the first optical sensor PS1, and the first electrode 175 of the second photoelectric conversion element PD2 may be provided in the second sensing area SA2 of the second optical sensor PS2. The first electrode 175 may be connected to the second anode connection electrode ANE22 of the corresponding optical sensor PS through a contact hole penetrating the fifth insulating layer 153.

[0173] In an embodiment, the first electrode 175 of the photoelectric conversion element PD may have a single-layer structure of molybdenum (Mo), titanium (Ti), copper (Cu), or aluminum (Al), or may have a multilayer structure of ITO / Mg, ITO / MgF, ITO / Ag, and ITO / Ag / ITO. However, the embodiment is not limited thereto, and the material or structure of the first electrode 175 of the photoelectric conversion element PD may vary according to the embodiment.

[0174] The bank 160 may be disposed on the pixel electrode 171 and the first electrode 175. The bank 160 may be formed in a region overlapping the pixel electrode 171 (e.g., an upper portion of an edge of the pixel electrode 171), and the bank 160 may include an opening exposing a portion of the pixel electrode 171. A region where the exposed pixel electrode 171 and the light emitting layer 173 overlap (or a region including the exposed pixel electrode 171 and the light emitting layer 173) may be defined as an emission area EA of each pixel PX.

[0175] In addition, the bank 160 may be formed in a region overlapping with the first electrode 175 (e.g., an upper portion of an edge of the first electrode 175), and the bank 160 may include an opening exposing the first electrode 175. The opening exposing the first electrode 175 may provide a space in which the photoelectric conversion layer 177 of each optical sensor PS is formed. The region where the exposed first electrode 175 and the photoelectric conversion layer 177 overlap (or the region including the exposed first electrode 175 and the photoelectric conversion layer 177) may be defined as a light sensing region (e.g., a first sensing region SA1 of the first optical sensor PS1 or a second sensing region SA2 of the second optical sensor PS2). For example, the bank 160 may be disposed around the emission region EA and the first and second sensing regions SA1 and SA2 to surround the emission region EA and the first and second sensing regions SA1 and SA2.

[0176] In an embodiment, the bank 160 may include an organic insulating material selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin and benzocyclobutene (BCB). Alternatively, the bank 160 may include an inorganic material such as silicon nitride. The material of the bank 160 may vary according to the embodiment.

[0177] The light emitting layer 173 may be disposed on the pixel electrode 171 of the light emitting element EL exposed by the opening of the bank 160. The light emitting layer 173 may include a polymer material or a low molecular material. The light emitted from the light emitting layer 173 may contribute to image display. In an embodiment, a light emitting layer 173 may be provided for each pixel PX, and the light emitting layer 173 of each pixel PX may emit visible light of a color corresponding to the corresponding pixel PX. In another embodiment, the light emitting layer 173 may be a common layer shared by pixels PX of different colors, and a wavelength conversion layer corresponding to the color (or wavelength band) of light emitted from each of the pixels PX may be provided in the emission area EA of at least some of the pixels PX.

[0178] When the light emitting layer 173 is formed of an organic material, a hole injection layer and a hole transport layer may be disposed under each light emitting layer 173, and an electron injection layer and an electron transport layer may be stacked on each light emitting layer 173. They may be a single layer or multiple layers formed of an organic material.

[0179] The photoelectric conversion layer 177 may be disposed on the first electrode 175 of the photoelectric conversion element PD exposed by the opening of the bank 160. The photoelectric conversion layer 177 may generate photocharges corresponding to (e.g., proportional to) the incident light. The charges generated and accumulated in the photoelectric conversion layer 177 may be converted into an electrical signal required for photosensing (e.g., fingerprint sensing).

[0180] The photoelectric conversion layer 177 may include an electron donating material and an electron accepting material. The electron donating material may generate donor ions in response to light, and the electron accepting material may generate acceptor ions in response to light.

[0181] In an embodiment, when the photoelectric conversion layer 177 is formed of an organic material, the electron-donating material may include a compound such as subphthalocyanine (SubPc) or dibutyl phosphate (DBP), but is not limited thereto. The electron-accepting material may include a compound such as fullerene, a fullerene derivative, or a diimide, but is not limited thereto. In another embodiment, when the photoelectric conversion layer 177 is formed of an inorganic material, the photoelectric conversion element PD may be a PN type or PIN type phototransistor.

[0182] When the photoelectric conversion layer 177 is formed of an organic material, a hole injection layer and a hole transport layer may be disposed below each photoelectric conversion layer 177, and an electron injection layer and an electron transport layer may be disposed above each photoelectric conversion layer 177. They may be a single layer or multiple layers formed of an organic material.

[0183] In an embodiment, the first sensing area SA1 may be an area that receives light having the same wavelength as the wavelength of light generated from the emission area EA of the adjacent pixel PX while using the light as a light source. For example, the first sensing area SA1 may receive light having the same wavelength as the wavelength of light (e.g., green light) generated from the third emission area EA3 of at least one adjacent third color pixel PX3 while using the light as a light source.

[0184] The common electrode 180 may be disposed on the light emitting layer 173, the photoelectric conversion layer 177, and the bank 160. The common electrode 180 may be disposed across a plurality of pixels PX and a plurality of optical sensors PS to cover the light emitting layer 173, the photoelectric conversion layer 177, and the bank 160. In an embodiment, the common electrode 180 may include a conductive material having a low work function, such as Li, Ca, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF, Ba, or a compound or a mixture thereof (e.g., a mixture of Ag and Mg, etc.), or a material having a multilayer structure such as LiF / Ca or LiF / Al. Alternatively, the common electrode 180 may include a transparent metal oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), etc.

[0185] The encapsulation layer ENL may be disposed on the photoelectric element layer PEL. In an embodiment, the encapsulation layer ENL may include at least one inorganic layer and one organic layer to protect each of the light emitting layer 173 and the photoelectric conversion layer 177 from being penetrated by oxygen or moisture or foreign matter such as dust. For example, the encapsulation layer ENL may have a structure in which a first inorganic layer 191, an organic layer 193, and a second inorganic layer 195 are sequentially stacked. In an embodiment, the first inorganic layer 191 and the second inorganic layer 195 may be formed of a plurality of layers in which one or more inorganic layers of a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, and an aluminum oxide layer are alternately stacked. In an embodiment, the organic layer 193 may be an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, a polyimide resin, and the like.

[0186] The color filter layer CFL may be disposed over the encapsulation layer ENL. The color filter layer CFL may include a light blocking member LS and a color filter CF. The color filter layer CFL may further include a first overcoat layer OC1 covering the light blocking member LS and the color filter CF.

[0187] The light blocking member LS may be disposed in the active area AA including the first active area AA1 and the second active area AA2. The light blocking member LS may include a first opening OPN1 corresponding to the emission area EA of the pixel PX and a second opening OPN2 corresponding to the first sensing area SA1 of the first optical sensor PS1. For example, the light blocking member LS may include a first opening OPN1 exposing the light emitting element EL of the pixel PX and a second opening OPN2 exposing the first photoelectric conversion element PD1 of the first optical sensor PS1. The light blocking member LS may surround the emission area EA and the first sensing area SA1.

[0188] Figure 8 and Fig. 9It is shown that the first opening OPN1 and the second opening OPN2 of the light blocking member LS are aligned with the opening area of ​​the bank 160, but the embodiment is not limited thereto. For example, the size (e.g., area) of the first opening OPN1 or the second opening OPN2 of the light blocking member LS may be changed in consideration of the light emission characteristics or viewing angle of the pixel PX, the light receiving rate of the first optical sensor PS1, etc. For example, the light blocking member LS may be opened wider than the bank 160 in the portion corresponding to the first emission area EA1 and the first sensing area SA1.

[0189] The light blocking member LS may cover the second photoelectric conversion element PD2 of the second optical sensor PS2. For example, the light blocking member LS may be disposed above the second photoelectric conversion element PD2 in each second sensing area SA2 to completely cover each second photoelectric conversion element PD2.

[0190] The light blocking member LS may be formed of a material capable of blocking light. For example, the light blocking member LS may be formed of a photosensitive resin including an organic black pigment or an inorganic black pigment such as carbon black.

[0191] The color filter CF may include a first color filter CF1 for selectively transmitting first light of a first color, a second color filter CF2 for selectively transmitting second light of a second color, and a third color filter CF3 for selectively transmitting third light of a third color.

[0192] The first color filter CF1 may be located in the first emission area EA1 to be disposed on the light emitting element EL of the first color pixel PX1. For example, the first color filter CF1 may be disposed in a first opening OPN1 (e.g., a first opening OPN1 of a first group corresponding to the first color pixel PX1) of the light blocking member LS that exposes the light emitting element EL of the first color pixel PX1.

[0193] The second color filter CF2 may be located in the second emission area EA2 to be disposed on the light emitting element EL of the second color pixel PX2. For example, the second color filter CF2 may be disposed in the first opening OPN1 of the light blocking member LS exposing the light emitting element EL of the second color pixel PX2 (e.g., the first opening OPN1 of the second group corresponding to the second color pixel PX2).

[0194] In an embodiment, the first color filter CF1 and the second color filter CF2 may also be located in the second sensing area SA2 to be disposed on the second photoelectric conversion element PD2 of the second optical sensor PS2. For example, the first color filter CF1 and the second color filter CF2 may be disposed to overlap each other on the light blocking member LS covering the second photoelectric conversion element PD2. The light blocking member LS, the first color filter CF1 and the second color filter CF2 disposed to overlap each other in each of the second sensing areas SA2 may constitute or form a light blocking layer (hereinafter referred to as "first light blocking layer LBL1") disposed on the second photoelectric conversion element PD2. Therefore, the light blocking rate for the second photoelectric conversion element PD2 may be improved. In each second sensing area SA2, the light blocking member LS, the first color filter CF1 and the second color filter CF2 may be sequentially disposed or stacked, and the arrangement order thereof may vary according to the embodiment.

[0195] In an embodiment, each of the first color filter CF1 and the second color filter CF2 located in each second sensing area SA2 may completely cover the second photoelectric conversion element PD2 located in the second sensing area SA2. Therefore, external light may be more effectively blocked from being incident on the second optical sensor PS2.

[0196] The third color filter CF3 may be located in the third emission area EA3 to be disposed on the light emitting element EL of the third color pixel PX3. For example, the third color filter CF3 may be disposed in the first opening OPN1 of the light blocking member LS exposing the light emitting element EL of the third color pixel PX3 (e.g., the first opening OPN1 of the third group corresponding to the third color pixel PX3).

[0197] In an embodiment, the third color filter CF3 may also be located in the first sensing area SA1 to be disposed on the first photoelectric conversion element PD1 of the first optical sensor PS1. For example, the third color filter CF3 may be disposed in the second opening OPN2 of the light blocking member LS that exposes the first photoelectric conversion element PD1 of the first optical sensor PS1. Therefore, light having a desired color or wavelength band may be selectively transmitted through the first sensing area SA1. For example, the first optical sensor PS1 may output a first sensing signal according to the amount of received light while using the third light emitted from the adjacent third color pixel PX3 as a light source.

[0198] The first overcoat layer OC1 may be a capping layer for protecting the color filter CF and may include an inorganic layer. For example, the first overcoat layer OC1 may include silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, etc.

[0199] The window WDL may be disposed on the color filter layer CFL. The window WDL may be formed of, for example, a glass substrate, a plastic substrate, or a protective film, and the material thereof is not limited thereto.

[0200] Fig.10 is a plan view showing an arrangement structure of pixels PX, optical sensors PS, and color filters CF according to an embodiment. Fig.11 It is shown along Fig.10 A cross-sectional view of an example of a cross-section taken along line III-III'. Fig.10 and Fig.11 In the embodiments of the present invention, the same reference numerals will be assigned to the previously described embodiments (e.g., Figures 6 to 9 ) and their detailed description will be omitted.

[0201] Joint Figures 1 to 9 refer to Fig.10 and Fig.11 , the color filter layer CFL may further include a third color filter CF3 located in the second sensing area SA2. For example, a third color filter CF3 disposed on the light blocking member LS and overlapping with the second photoelectric conversion element PD2, the first color filter CF1, and the second color filter CF2 may be provided in each second sensing area SA2. The light blocking member LS, the first color filter CF1, the second color filter CF2, and the third color filter CF3 disposed to overlap with each other in each of the second sensing areas SA2 may constitute or form a light blocking layer (hereinafter, referred to as "second light blocking layer LBL2") disposed on the second photoelectric conversion element PD2. The stacking order of the light blocking member LS, the first color filter CF1, the second color filter CF2, and the third color filter CF3 disposed in each second sensing area SA2 is not limited and may vary according to the embodiment.

[0202] In an embodiment, the third color filter CF3 may be disposed to completely cover the second photoelectric conversion element PD2 in the second sensing area SA2. The third color filter CF3 disposed in the second sensing area SA2 may shield the second photoelectric conversion element PD2 together with the light blocking member LS, the first color filter CF1, and the second color filter CF2 in the second sensing area SA2, thereby blocking external light from being incident on the second photoelectric conversion element PD2.

[0203] As in the above-described embodiment, by overlapping the light blocking member LS and at least two color filters CF on the second photoelectric conversion element PD2, the light blocking ratio can be increased. Figures 6 to 9 As in the embodiment of the present invention, the light blocking member LS, the first color filter CF1 and the second color filter CF2 may be disposed on the second photoelectric conversion element PD2 to provide a first light blocking layer LBL1 in each second sensing area SA2, or as Fig.10 and Fig.11 As in the embodiment of the present invention, the light blocking member LS, the first color filter CF1, the second color filter CF2, and the third color filter CF3 may be disposed on the second photoelectric conversion element PD2 to provide a second light blocking layer LBL2 in each second sensing area SA2. Therefore, external light can be effectively blocked without significantly increasing the thickness of the light blocking member LS (e.g., by about 3 times or more).

[0204] In an embodiment, the type or number of color filters CF used to shield the second photoelectric conversion element PD2 can be selected in consideration of light transmittance, the level of processing difficulty of the display panel 10, or the defect rate. For example, when the light transmittance set to the target value (for example, the light transmittance set to 1% or less, 0.001% or less, or 0.0001% or less) can be achieved by setting the light blocking member LS, the first color filter CF1, and the second color filter CF2 in the second sensing area SA2, only the first light blocking layer LBL1 in which the light blocking member LS, the first color filter CF1, and the second color filter CF2 overlap can be set, and the third color filter CF3 is not set in each second sensing area SA2. Therefore, the height or thickness of the light blocking layer for shielding the second photoelectric conversion element PD2 can be reduced or minimized. Therefore, the display panel 10 can be manufactured more easily or smoothly, and the defect rate can be reduced. Meanwhile, when it is necessary to reduce the external light transmittance of the second optical sensor PS2 in the second active area AA2, a second light blocking layer LBL2 in which the light blocking member LS, the first color filter CF1, the second color filter CF2 and the third color filter CF3 all overlap may be provided in each second sensing area SA2.

[0205] In addition, in an embodiment, the light blocking layer (e.g., the first light blocking layer LBL1 or the second light blocking layer LBL2) may be formed on the second optical sensor PS2 using the light blocking member LS and the color filter CF disposed adjacent thereto. Therefore, the light blocking layer may be easily or appropriately formed without adding a separate mask process, etc.

[0206] Fig.12 is a graph showing light transmittance of a light blocking layer according to an embodiment.

[0207] refer to Fig.12 , the light transmittance may vary depending on the configuration or structure of the light blocking layer. For example, when the light blocking layer (hereinafter, referred to as "reference light blocking layer LBLref") is formed by simply overlapping the light blocking member LS and the third color filter CF3, the light transmittance of the reference light blocking layer LBLref for the third light (e.g., green light of a wavelength band of about 480 nm to 560 nm) may be in the range of about 0.001 (0.1%) to 0.01 (1%).

[0208] On the other hand, when the first light blocking layer LBL1 is formed by overlapping the light blocking member LS, the first color filter CF1, and the second color filter CF2 according to an embodiment, the light transmittance of the first light blocking layer LBL1 for at least the third light may be reduced to about 10 -6 (0.0001%) or less. For example, in a wavelength band corresponding to the third light, the light blocking rate of the first light blocking layer LBL1 may be substantially similar to or equal to the light blocking rate of the second light blocking layer LBL2.

[0209] When the second light blocking layer LBL2 is formed by overlapping the light blocking member LS, the first color filter CF1, the second color filter CF2, and the third color filter CF3 according to another embodiment, the light transmittance of the second light blocking layer LBL2 for the third light may be about 10 -6 (0.0001%) or less. In addition, the light transmittance of the second light blocking layer LBL2 with respect to the second light (eg, blue light of a wavelength band of about 370 nm to about 460 nm) may be reduced to about 10 -6 (0.0001%) or less.

[0210] Therefore, an appropriate light blocking layer may be formed on the second optical sensor PS2 in consideration of the wavelength band of light to be blocked using the light blocking layer, the target light transmittance (or light blocking rate), the structure or thickness of the display panel 10, or the manufacturing efficiency of the display panel 10. For example, when sensing a fingerprint or the like using the third light emitted from the third color pixel PX3, by forming the first light blocking layer LBL1 whose thickness is reduced or minimized while effectively blocking the third light in the second sensing area SA2, noise generated from the display panel 10 may be more accurately sensed.

[0211] As described above, the display device 1 according to the embodiment may include a first optical sensor PS1 disposed in the first active area AA1 and including a first photoelectric conversion element PD1, and a second optical sensor PS2 disposed in the second active area AA2 and including a second photoelectric conversion element PD2. In addition, the display device 1 may include a light blocking member LS and a first color filter CF1 and a second color filter CF2 disposed to overlap each other above the second photoelectric conversion element PD2.

[0212] According to an embodiment, external light can be effectively blocked from being incident on the second photoelectric conversion element PD2. Therefore, the noise generated from the display panel 10 can be effectively sensed using the second optical sensor PS2, and the performance of the light sensing unit (for example, a fingerprint sensor disposed or formed within the display panel 10) including the first optical sensor PS1 and the second optical sensor PS2 can be improved. For example, while utilizing the noise sensed using the second optical sensor PS2, the noise included in the first sensing signal input from the first optical sensor PS1 can be removed. Therefore, the user input (for example, fingerprint input) generated in the first effective area AA1 can be more accurately sensed, and the performance (for example, sensitivity) of the light sensing unit can be improved.

[0213] Although the embodiments of the present disclosure have been described, various modifications and similar arrangements of these embodiments will be apparent to those skilled in the art. Therefore, the present disclosure is not limited to these embodiments, but is limited to the scope and spirit of the appended claims.

Claims

1. A display device, characterized in that include: An effective area, including a first effective area and a second effective area; Pixels, disposed in the first active area and the second active area and including corresponding light emitting elements; a first optical sensor disposed in the first effective area and including a first photoelectric conversion element; a second optical sensor disposed in the second active area and including a second photoelectric conversion element; a light blocking member disposed in the first effective region and the second effective region, including a first opening exposing the light emitting element and a second opening exposing the first photoelectric conversion element, and covering the second photoelectric conversion element; as well as A first color filter and a second color filter are disposed on the light blocking member and overlap each other above the second photoelectric conversion element.

2. The display device according to claim 1, characterized in that The light blocking member completely covers the second photoelectric conversion element.

3. The display device according to claim 2, characterized in that: Each of the first color filter and the second color filter completely covers the second photoelectric conversion element.

4. The display device according to claim 1, characterized in that The second active area is located at an edge of the active area.

5. The display device according to claim 1, characterized in that The invention further includes a third color filter disposed in the second opening so as to overlap with the first photoelectric conversion element.

6. The display device according to claim 5, characterized in that: The first color filter is a red color filter, The second color filter is a blue color filter, and The third color filter is a green color filter.

7. The display device according to claim 5, characterized in that: The pixels include first color pixels, second color pixels, and third color pixels.

8. The display device according to claim 7, characterized in that: The first color filter is also disposed in a first opening of the first group of light emitting elements of the first color pixel exposed among the first openings; The second color filter is also disposed in a first opening of a second group of light emitting elements of the second color pixel exposed in the first opening; as well as The third color filter is also disposed in a first opening of a third group of the first openings that exposes the light emitting elements of the third color pixels.

9. The display device according to claim 1, characterized in that: A third color filter is also included, the third color filter being disposed on the light blocking member and overlapping the first color filter and the second color filter over the second photoelectric conversion element.

10. The display device according to claim 9, characterized in that: The third color filter completely covers the second photoelectric conversion element.

11. A display device, characterized in that include: A substrate including a first active region and a second active region; Pixels, arranged on the substrate to be located in the first active area and the second active area, and including corresponding light emitting elements; a first optical sensor disposed on the substrate to be located between the pixels positioned in the first active area and including a corresponding first photoelectric conversion element; a second optical sensor disposed on the substrate to be located between the pixels positioned in the second active area and including a corresponding second photoelectric conversion element; a light blocking member disposed above at least the second photoelectric conversion element and completely covering the second photoelectric conversion element; as well as A first color filter and a second color filter are disposed on the light blocking member and overlap each other above the second photoelectric conversion element.

12. The display device according to claim 11, characterized in that: The first color filter and the second color filter completely cover the second photoelectric conversion element.

13. The display device according to claim 11, characterized in that The first color filter is a red color filter, and The second color filter is a blue color filter.

14. The display device according to claim 11, characterized in that: A third color filter is also included, the third color filter being disposed on the light blocking member and overlapping the first color filter and the second color filter over the second photoelectric conversion element.

15. The display device according to claim 14, characterized in that: The third color filter is a green color filter.

16. The display device according to claim 14, characterized in that: The third color filter completely covers the second photoelectric conversion element.

17. The display device according to claim 11, characterized in that: The light blocking member is disposed in the first and second active regions and includes a first opening exposing at least a portion of each of the light emitting elements and a second opening exposing at least a portion of each of the first photoelectric conversion elements.

18. The display device according to claim 17, characterized in that: The pixels include first color pixels, second color pixels, and third color pixels.

19. The display device according to claim 18, characterized in that The first color filter is also disposed in a first opening of the first group of light emitting elements of the first color pixel exposed among the first openings; The second color filter is also disposed in a first opening of a second group of light emitting elements of the second color pixel exposed in the first opening; as well as A third color filter is disposed in the second opening and in a first opening of a third group of the first openings that expose the light emitting elements of the third color pixels.

20. The display device according to claim 11, characterized in that The first active area is located at the center of an active area including the first active area and the second active area, and The second active area is located at an edge of the active area.

Images