Semiconductor light-emitting element
By designing a semiconductor light emitting element including a substrate, epitaxial layer and isolation groove, the problem of huge transfer in Micro LED technology is solved, and rapid and accurate transfer is achieved, and the transfer efficiency is improved.
Patent Information
- Application Number
- CN202420827856.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-19
- Publication Date
- 2025-03-18
- Estimated Expiration
- 2034-04-19
AI Technical Summary
The difficulty of huge transfer in Micro LED technology lies in how to quickly and accurately transfer micro red, green and blue grains above the million-level to the corresponding position on the target substrate.
A semiconductor light emitting element is designed, including a substrate, an epitaxial layer and an isolation groove. The epitaxial layer consists of a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer. The multi-quantum well layer includes a blue light, a green light and a red light quantum well layer. The isolation groove is located between adjacent light emitting regions and extends downward from the surface of the epitaxial layer to the first semiconductor layer.
Through this design, a large amount of transfer is achieved quickly and accurately, the transfer yield is improved, and the number of transfers is reduced, and the huge amount of transfers can be achieved quickly and accurately.
Smart Images
Figure CN222639008U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, in particular to a semiconductor light-emitting element. Background Art
[0002] Semiconductor light-emitting components have the advantages of energy saving, environmental protection, small size, long life and high luminous efficiency. They are widely used in security, plant lighting, medical treatment, display screens, home lighting, car lights, backlight sources, stage lights and other fields.
[0003] As a new display technology, Micro LED (micro light emitting diode) has the advantages of high resolution, low power consumption, high contrast and high color saturation. It is the next generation display technology that everyone is looking forward to and has become a key research and development project for major manufacturers. At present, one of the technical difficulties of Micro LED is mass transfer, which requires the accurate transfer of more than a million red, green and blue grains with a size of less than 100μm to the corresponding positions on the target substrate. Therefore, how to quickly and accurately achieve mass transfer is an urgent problem to be solved. Utility Model Content
[0004] The purpose of the utility model is to provide a semiconductor light-emitting element that can achieve mass transfer quickly and accurately.
[0005] To achieve the above object, the utility model provides a semiconductor light emitting element, comprising:
[0006] A substrate, comprising a first light emitting area, a second light emitting area and a third light emitting area;
[0007] an epitaxial layer, located on the substrate, the epitaxial layer comprising a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer stacked in sequence from bottom to top, the first semiconductor layer and the second semiconductor layer having opposite doping types, the multi-quantum well layer in the first light-emitting region comprising a blue light quantum well layer, a green light quantum well layer, and a red light quantum well layer stacked from bottom to top, the multi-quantum well layer in the second light-emitting region comprising a blue light quantum well layer and a green light quantum well layer stacked from bottom to top, and the multi-quantum well layer in the third light-emitting region comprising a blue light quantum well layer;
[0008] An isolation groove is located between two adjacent regions among the first light-emitting region, the second light-emitting region and the third light-emitting region, and the isolation groove extends downward from the surface of the epitaxial layer to at least the first semiconductor layer.
[0009] Optionally, the blue light quantum well layer in the third light-emitting zone emits blue light; the green light quantum well layer in the second light-emitting zone emits green light and absorbs the blue light emitted by the blue light quantum well layer; the green light quantum well layer in the first light-emitting zone emits green light and absorbs the blue light emitted by the blue light quantum well layer, and the red light quantum well layer in the first light-emitting zone emits red light and absorbs the green light emitted by the green light quantum well layer.
[0010] Optionally, the blue light quantum well layer is a periodic structure formed by alternating growth of a blue light potential well layer and a first barrier layer, and the total number of periods of the blue light quantum well layer is 2 to 6; the green light quantum well layer is a periodic structure formed by alternating growth of a green light potential well layer and a second barrier layer, and the total number of periods of the green light quantum well layer is 2 to 6; the red light quantum well layer is a periodic structure formed by alternating growth of a red light potential well layer and a third barrier layer, and the total number of periods of the red light quantum well layer is 2 to 6.
[0011] Optionally, the total period number of the green light quantum well layer is 3 to 4, and the total period number of the red light quantum well layer is 3 to 4.
[0012] Optionally, the wavelength range of the light emitted by the blue light quantum well layer is 440nm-480nm, the wavelength range of the light emitted by the green light quantum well layer is 510nm-560nm, and the wavelength range of the light emitted by the red light quantum well layer is 600nm-650nm.
[0013] Optionally, a surface of the second semiconductor layer in the first light emitting area, the second light emitting area and the third light emitting area away from the substrate is flush.
[0014] Optionally, the semiconductor light emitting element further includes:
[0015] The first electrode is located on the second semiconductor layer in the first light emitting area, the second light emitting area and the third light emitting area.
[0016] Optionally, the substrate is an insulating substrate, and the isolation trench at least penetrates the first semiconductor layer.
[0017] Optionally, the first light-emitting area, the second light-emitting area and the third light-emitting area all include a step located at the edge of the epitaxial layer, the step penetrates the second semiconductor layer and the multi-quantum well layer and exposes the surface of the first semiconductor layer, and the surface of the first semiconductor layer exposed by the step is formed with a second electrode spaced apart from the multi-quantum well layer.
[0018] Optionally, surfaces of the substrates of the first light-emitting area, the second light-emitting area and the third light-emitting area away from the first semiconductor layer are respectively formed with second electrodes separated from each other; the first semiconductor layers of the first light-emitting area, the second light-emitting area and the third light-emitting area are respectively electrically connected to the second electrodes through through-hole conductive structures.
[0019] Optionally, the substrate is an insulating substrate, and the isolation trench does not penetrate the first semiconductor layer; or, the substrate is a conductive substrate, and the isolation trench penetrates or does not penetrate the first semiconductor layer.
[0020] Optionally, the substrate further includes an electrode region, the first semiconductor layer is formed on the substrate in the electrode region, and the second electrode is formed on the first semiconductor layer in the electrode region.
[0021] Optionally, the substrate is an insulating substrate or a conductive substrate, and the isolation trench passes through or does not pass through the first semiconductor layer.
[0022] Optionally, a second electrode is formed on the surface of the substrate away from the first semiconductor layer; when the substrate is an insulating substrate and the isolation groove does not penetrate the first semiconductor layer, the first semiconductor layer is electrically connected to the second electrode through a through-hole conductive structure; when the substrate is an insulating substrate and the isolation groove penetrates the first semiconductor layer, the first semiconductor layer of the first light-emitting area, the second light-emitting area and the third light-emitting area are respectively electrically connected to the second electrode through a through-hole conductive structure.
[0023] Optionally, the isolation trench is filled with insulating material.
[0024] Optionally, the semiconductor light emitting element further includes:
[0025] A buffer layer is located between the substrate and the first semiconductor layer.
[0026] Compared with the prior art, the semiconductor light-emitting element of the utility model comprises: a substrate, comprising a first light-emitting area, a second light-emitting area and a third light-emitting area; an epitaxial layer, located on the substrate, the epitaxial layer comprising a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer stacked in sequence from bottom to top, the first semiconductor layer and the second semiconductor layer having opposite doping types, the multi-quantum well layer in the first light-emitting area comprising a blue light quantum well layer, a green light quantum well layer and a red light quantum well layer stacked from bottom to top, the multi-quantum well layer in the second light-emitting area comprising a blue light quantum well layer and a green light quantum well layer stacked from bottom to top, and the multi-quantum well layer in the third light-emitting area comprising a blue light quantum well layer; an isolation groove, located between two adjacent areas in the first light-emitting area, the second light-emitting area and the third light-emitting area, the isolation groove extending downward from the surface of the epitaxial layer at least into the first semiconductor layer, so that mass transfer can be achieved quickly and accurately. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 is a schematic top view of a semiconductor light emitting element according to Embodiment 1 of the present utility model;
[0028] Figure 2a yes Figure 1 The schematic cross-sectional view of the semiconductor light emitting element shown is along the AA' direction;
[0029] Figure 2b yes Figure 1 The schematic cross-sectional view of the semiconductor light emitting element shown is along the BB' direction;
[0030] Figure 2c yes Figure 1 The schematic cross-sectional view of the semiconductor light emitting element shown along the CC' direction;
[0031] Figure 3a to Figure 3b is a schematic top view of a semiconductor light emitting element according to a second embodiment of the present utility model;
[0032] Figure 4a yes Figure 3a A schematic cross-sectional view of the semiconductor light emitting element shown along the DD' direction;
[0033] Figure 4b yes Figure 3a A schematic cross-sectional view of the semiconductor light emitting element shown along the EE' direction;
[0034] Figure 4c yes Figure 3a A schematic cross-sectional view of the semiconductor light emitting element shown along the FF' direction;
[0035] Figure 5 is a schematic top view of a semiconductor light emitting element according to a third embodiment of the present utility model;
[0036] Figure 6a to Figure 6b yes Figure 5 The schematic cross-sectional view of the semiconductor light emitting element shown is along the GG' direction.
[0037] Among them, Figure 1 to Figure 6b The reference numerals are described as follows:
[0038] 10-substrate; 101-buffer layer; 11-first semiconductor layer; 12-blue light quantum well layer; 121-blue light potential well layer; 122-first barrier layer; 13-green light quantum well layer; 131-green light potential well layer; 132-second barrier layer; 14-red light quantum well layer; 141-red light potential well layer; 142-third barrier layer; 15-second semiconductor layer; 16-isolation groove; 17-first electrode; 18-second electrode; 19-through hole conductive structure. DETAILED DESCRIPTION
[0039] In order to make the purpose, advantages and features of the present invention more clear, the semiconductor light emitting element proposed by the present invention is further described in detail below. It should be noted that the drawings are all in a very simplified form and are not in precise proportions, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0040] An embodiment of the utility model provides a semiconductor light-emitting element, comprising: a substrate, comprising a first light-emitting area, a second light-emitting area and a third light-emitting area; an epitaxial layer, located on the substrate, the epitaxial layer comprising a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer stacked in sequence from bottom to top, the first semiconductor layer and the second semiconductor layer having opposite doping types, the multi-quantum well layer in the first light-emitting area comprising a blue light quantum well layer, a green light quantum well layer and a red light quantum well layer stacked from bottom to top, the multi-quantum well layer in the second light-emitting area comprising a blue light quantum well layer and a green light quantum well layer stacked from bottom to top, and the multi-quantum well layer in the third light-emitting area comprising a blue light quantum well layer; an isolation groove, located between two adjacent areas of the first light-emitting area, the second light-emitting area and the third light-emitting area, the isolation groove extending downward from the surface of the epitaxial layer at least into the first semiconductor layer.
[0041] See below Figure 1 to Figure 6b The semiconductor light emitting element provided in this embodiment is described in more detail. Figure 1 , Figure 3a to Figure 3b and Figure 5 Only part of the structure of the semiconductor light emitting element is shown in the figure, and in order to show the position of the isolation groove 16, Figure 1 , Figure 3a to Figure 3b and Figure 5 The structure exposed by the isolation groove 16 is not shown in the figure.
[0042] In one embodiment, the substrate 10 is an insulating substrate, and the material of the substrate 10 is preferably a transparent insulating material. More preferably, the material of the substrate 10 is sapphire or silicon carbide, but not limited thereto. In another embodiment, the substrate 10 is a conductive substrate, and the material of the substrate 10 can be silicon or germanium, but not limited thereto.
[0043] The surface of the substrate 10 may have a patterned structure or a polished surface. The substrate 10 is preferably a sapphire substrate with a patterned structure to improve the light emitting efficiency of the semiconductor light emitting element.
[0044] The substrate 10 includes a first light emitting area A1, a second light emitting area A2 and a third light emitting area A3.
[0045] The epitaxial layer is located on the substrate 10, and the epitaxial layer includes the first semiconductor layer 11, the multi-quantum well layer and the second semiconductor layer 15 stacked in sequence from bottom to top, the first semiconductor layer 11 and the second semiconductor layer 15 have opposite doping types, the multi-quantum well layer of the first light-emitting area A1 includes a blue light quantum well layer 12, a green light quantum well layer 13 and a red light quantum well layer 14 stacked from bottom to top, the multi-quantum well layer of the second light-emitting area A2 includes a blue light quantum well layer 12 and a green light quantum well layer 13 stacked from bottom to top, and the multi-quantum well layer of the third light-emitting area A3 includes a blue light quantum well layer 12.
[0046] In the first light-emitting area A1, the second semiconductor layer 15 is located on the red light quantum well layer 14; in the second light-emitting area A2, the second semiconductor layer 15 is located on the green light quantum well layer 13; in the third light-emitting area A3, the second semiconductor layer 15 is located on the blue light quantum well layer 12.
[0047] Preferably, the second semiconductor layer 15 of the first light-emitting area A1, the second light-emitting area A2, and the third light-emitting area A3 are flush with each other on one side away from the substrate 10. In other embodiments, the second semiconductor layer 15 of the first light-emitting area A1 has a side away from the substrate 10 higher than the side of the second semiconductor layer 15 of the second light-emitting area A2 that is away from the substrate 10, and the second semiconductor layer 15 of the second light-emitting area A2 has a side away from the substrate 10 higher than the side of the second semiconductor layer 15 of the third light-emitting area A3 that is away from the substrate 10.
[0048] The material of the first semiconductor layer 11 can be at least one of GaN, AlGaN and InGaN, etc.; the material of the second semiconductor layer 15 can be at least one of GaN, AlGaN and InGaN, etc.; the material of the multi-quantum well layer can be at least one of GaN, AlGaN, InGaN and AlInGaN, etc. It should be noted that the materials of the first semiconductor layer 11, the second semiconductor layer 15 and the multi-quantum well layer are not limited to the above-mentioned types.
[0049] Preferably, the doping type of the first semiconductor layer 11 is N-type, and the doping type of the second semiconductor layer 15 is P-type. The N-type dopant may be at least one of Si, Ge, Sn and other elements, and the P-type dopant may be at least one of C, Mg, Zn, Ca, Sr, Ba and other elements. The ion doping concentration in the first semiconductor layer 11 may be greater than or equal to 1E18cm -3 The ion doping concentration in the second semiconductor layer 15 may be greater than or equal to 5E18cm -3 , but not limited to this.
[0050] In other embodiments, the doping type of the first semiconductor layer 11 may be P-type, and the doping type of the second semiconductor layer 15 may be N-type.
[0051] In one embodiment, the thickness of the first semiconductor layer 11 may be 1 μm to 3 μm, and the thickness of the second semiconductor layer 15 located on the red light quantum well layer 14 may be 10 nm to 100 nm, but is not limited thereto.
[0052] The blue light quantum well layer 12 is used to emit blue light, the green light quantum well layer 13 is used to emit green light, and the red light quantum well layer 14 is used to emit red light. Since the multi-quantum well layer of the third light-emitting area A3 only includes the blue light quantum well layer 12, the third light-emitting area A3 only emits blue light; since the multi-quantum well layer of the second light-emitting area A2 includes the blue light quantum well layer 12 and the green light quantum well layer 13 stacked from bottom to top, the green light quantum well layer 13 of the second light-emitting area A2 emits green light, and the blue light emitted by the blue light quantum well layer 12 will be absorbed by the green light quantum well layer 13, so that the second light-emitting area A2 only emits green light; since the multi-quantum well layer of the first light-emitting area A1 includes the blue light quantum well layer 12, the green light quantum well layer 13 and the red light quantum well layer 14 stacked from bottom to top, the green light quantum well layer 13 of the first light-emitting area A1 emits green light and absorbs the blue light emitted by the blue light quantum well layer 12, and the red light quantum well layer 14 of the first light-emitting area A1 emits red light and absorbs the green light emitted by the green light quantum well layer 13, so that the first light-emitting area A1 only emits red light.
[0053] The blue light quantum well layer 12 is a periodic structure formed by the alternating growth of the blue light potential well layer 121 and the first barrier layer 122. If the period number of the blue light quantum well layer 12 is too small, the luminous intensity of the blue light quantum well layer 12 will be too low, and then the light intensity emitted by the third light emitting area A3 will be too low; if the period number of the blue light quantum well layer 12 is too large, it will be unfavorable for the diffusion of carriers in the blue light quantum well layer 12, thereby affecting the recombination efficiency and reducing the overall luminous efficiency.
[0054] The green light quantum well layer 13 is a periodic structure formed by alternating growth of a green light potential well layer 131 and a second potential barrier layer 132. If the number of periods of the green light quantum well layer 13 is too small, the luminous intensity of the green light quantum well layer 13 will be too low, and the light intensity emitted by the second light-emitting area A2 will be too low; and the green light quantum well layer 13 of the first light-emitting area A1 and the second light-emitting area A2 will not be able to effectively absorb the blue light emitted by the blue light quantum well layer 12, and the light incident on the red light quantum well layer 14 of the first light-emitting area A1 contains a strong blue light component, and the light emitted by the second light-emitting area A2 contains a strong blue light component; if the number of periods of the green light quantum well layer 13 is too large, it will be unfavorable for the diffusion of carriers in the green light quantum well layer 13, thereby affecting the recombination efficiency and reducing the overall luminous efficiency.
[0055] The red light quantum well layer 14 is a periodic structure formed by the alternating growth of the red light potential well layer 141 and the third potential barrier layer 142. If the number of periods of the red light quantum well layer 14 is too small, the luminous intensity of the red light quantum well layer 14 will be too low, and the light intensity emitted by the first light-emitting area A1 will be too low; and the red light quantum well layer 14 will not be able to effectively absorb the green light emitted by the green light quantum well layer 13, and the light emitted by the first light-emitting area A1 will contain a strong green light component; if the number of periods of the red light quantum well layer 14 is too large, it will be unfavorable for the diffusion of carriers in the red light quantum well layer 14, thereby affecting the recombination efficiency and reducing the overall luminous efficiency.
[0056] Therefore, considering the diffusion capacity of carriers in each quantum well layer, the total number of periods of the red light quantum well layer 14, the green light quantum well layer 13 and the blue light quantum well layer 12 as a whole (i.e., the total number of periods of the multi-quantum well layer) cannot be too much; at the same time, considering the light intensity of the red light quantum well layer 14, the green light quantum well layer 13 and the blue light quantum well layer 12, it is necessary to control the total number of periods of the red light quantum well layer 14, the green light quantum well layer 13 and the blue light quantum well layer 12 to be not too small. Then, preferably, the total number of periods of the red light quantum well layer 14 is 2 to 6, the total number of periods of the green light quantum well layer 13 is 2 to 6, and the total number of periods of the blue light quantum well layer 12 is 2 to 6.
[0057] Further preferably, the total period number of the green light quantum well layer 13 is 3 to 4, and the total period number of the red light quantum well layer 14 is 3 to 4, so as to further improve the absorption effect of the green light quantum well layer 13 on the blue light emitted by the blue light quantum well layer 12, and further improve the absorption effect of the red light quantum well layer 14 on the green light emitted by the green light quantum well layer 13.
[0058] The wavelength range of the light emitted by the blue quantum well layer 12 may be 440nm-480nm, the wavelength range of the light emitted by the green quantum well layer 13 may be 510nm-560nm, and the wavelength range of the light emitted by the red quantum well layer 14 may be 600nm-650nm, but are not limited thereto.
[0059] The semiconductor light emitting element further includes: a buffer layer 101 , located between the substrate 10 and the first semiconductor layer 11 , and used to relieve stress between the substrate 10 and the first semiconductor layer 11 .
[0060] The material of the buffer layer 101 can be at least one of AlN, AlON, AlGaN and GaN.
[0061] The thickness of the buffer layer 101 may be greater than or equal to 1 μm, but is not limited thereto.
[0062] The isolation groove 16 is located between two adjacent areas among the first light emitting area A1 , the second light emitting area A2 and the third light emitting area A3 , and the isolation groove 16 extends downward from the surface of the epitaxial layer at least into the first semiconductor layer 11 .
[0063] The isolation groove 16 can reduce the mixing of three colors of light, namely, the red light emitted by the first light-emitting area A1, the green light emitted by the second light-emitting area A2, and the blue light emitted by the third light-emitting area A3.
[0064] The isolation trench 16 may be filled with or not filled with insulating material.
[0065] The first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 can be arranged in the same direction or in different directions, and the positions of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 can be interchanged. Figure 1 , Figure 3b and Figure 5In the illustrated embodiment, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are arranged in sequence along the same direction, and the isolation groove 16 is located between the adjacent first light-emitting area A1 and the second light-emitting area A2 and between the adjacent second light-emitting area A2 and the third light-emitting area A3; Figure 3a In the embodiment shown, the first light-emitting area A1 and the second light-emitting area A2 are arranged along a first direction, the first light-emitting area A1 and the third light-emitting area A3 are arranged along a second direction, and the first direction and the second direction are perpendicular, and the isolation groove 16 is located between the adjacent first light-emitting area A1 and the second light-emitting area A2, between the adjacent first light-emitting area A1 and the third light-emitting area A3, and between the adjacent second light-emitting area A2 and the third light-emitting area A3. The arrangement of the first light-emitting area A1, the second light-emitting area A2, and the third light-emitting area A3 is not limited to Figure 1 , Figure 3a to Figure 3b and Figure 5 The embodiment shown.
[0066] The semiconductor light-emitting element also includes: a first electrode 17, which is located on the second semiconductor layer 15 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3, that is, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are each formed with the first electrode 17 separated from each other on the second semiconductor layer 15.
[0067] In one embodiment, the substrate 10 is an insulating substrate, and the isolation groove 16 at least penetrates the first semiconductor layer 11, so that at least the first light-emitting area A1, the second light-emitting area A2 and the first semiconductor layer 11 of the third light-emitting area A3 are separated. The isolation groove 16 can just penetrate the first semiconductor layer 11 (e.g. Figure 1 , Figure 2a to Figure 2c , Figure 5 and Figure 6a As shown); alternatively, the isolation trench 16 may penetrate the first semiconductor layer 11 and then enter the buffer layer 101, including penetrating or not penetrating the buffer layer 101; alternatively, the isolation trench 16 may penetrate the first semiconductor layer 11 and the buffer layer 101 and then enter the substrate 10, but not penetrating the substrate 10.
[0068] Among them, Figure 1 and Figure 2a to Figure 2cAs shown, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 all include a step located at the edge of the epitaxial layer, the step penetrates the second semiconductor layer 15 and the multi-quantum well layer and exposes the surface of the first semiconductor layer 11, and the surface of the first semiconductor layer 11 exposed by the step is formed with a second electrode 18 spaced apart from the multi-quantum well layer. At this time, the semiconductor light-emitting element is a face-up structure, and the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 have their own separate second electrode 18.
[0069] Or, if Figure 5 and Figure 6a As shown, the surfaces of the substrate 10 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 away from the first semiconductor layer 11 are respectively formed with second electrodes 18 separated from each other. At this time, the semiconductor light-emitting element is a vertical structure, and the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 have their own separate second electrodes 18. The first semiconductor layer 11 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are respectively electrically connected to the second electrode 18 through a through-hole conductive structure 19.
[0070] Alternatively, in another embodiment, the substrate 10 is an insulating substrate, and the isolation groove 16 does not penetrate the first semiconductor layer 11, so that the first semiconductor layer 11 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are electrically connected; or, the substrate 10 is a conductive substrate, and the isolation groove 16 penetrates the first semiconductor layer 11, so that the substrate 10 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are electrically connected, or the isolation groove 16 does not penetrate the first semiconductor layer 11, so that the substrate 10 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 and the first semiconductor layer 11 are respectively electrically connected.
[0071] Among them, Figure 3a to Figure 3b and Figure 4a to Figure 4cAs shown, the substrate 10 further includes an electrode region A4, the first semiconductor layer 11 is formed on the substrate 10 of the electrode region A4, and the second electrode 18 is formed on the first semiconductor layer 11 of the electrode region A4. At this time, the semiconductor light emitting element is a face-up structure, and because the first semiconductor layers 11 of the first light emitting region A1, the second light emitting region A2, and the third light emitting region A3 are electrically connected, or the substrates 10 and the first semiconductor layers 11 of the first light emitting region A1, the second light emitting region A2, and the third light emitting region A3 are electrically connected, the first light emitting region A1, the second light emitting region A2, and the third light emitting region A3 share the second electrode 18.
[0072] The isolation groove 16 may also be formed between the region adjacent to the electrode region A4 and the electrode region A4 in the first light emitting region A1, the second light emitting region A2, and the third light emitting region A3, and the isolation groove 16 extends from the surface of the first semiconductor layer 11 to pass through or not pass through the first semiconductor layer 11. Figure 3a and Figure 4a to Figure 4c In the embodiment shown, the second light emitting area A2 and the third light emitting area A3 are both adjacent to the electrode area A4, and the isolation groove 16 is formed between the electrode area A4 and the second light emitting area A2 and between the electrode area A4 and the third light emitting area A3; Figure 3b In the embodiment shown, the isolation groove 16 is formed between the electrode area A4 and the first light-emitting area A1 and between the electrode area A4 and the second light-emitting area A2. It should be noted that the relative position between the electrode area A4 and the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 is not limited to Figure 3a to Figure 3b The embodiment shown.
[0073] Alternatively, in other embodiments, the substrate 10 is an insulating substrate or a conductive substrate, and the isolation groove 16 passes through or does not pass through the first semiconductor layer 11. A second electrode 18 is formed on a surface of the substrate 10 away from the first semiconductor layer 11, and the second electrode 18 can be located on a part or all of the surface of the substrate 10 away from the first semiconductor layer 11. In this case, the semiconductor light emitting element is a vertical structure.
[0074] When the substrate 10 is an insulating substrate and the isolation trench 16 does not penetrate the first semiconductor layer 11, Figure 5 and Figure 6bAs shown, the first semiconductor layer 11 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 is electrically connected, and the first semiconductor layer 11 is electrically connected to the second electrode 18 through the through-hole conductive structure 19. At this time, at least one area of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 is formed with the through-hole conductive structure 19, so that the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 can share the second electrode 18; when the substrate 10 is an insulating substrate and the isolation groove 16 passes through the first semiconductor layer 11, the first semiconductor layer 11 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are respectively electrically connected to the second electrode 18 through the through-hole conductive structure 19. At this time, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are all formed with the through-hole conductive structure 19 to achieve The first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 share the second electrode 18; when the substrate 10 is a conductive substrate and the isolation groove 16 passes through the first semiconductor layer 11, since the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are electrically connected to the substrate 10, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 can share the second electrode 18 without the through-hole conductive structure 19; when the substrate 10 is a conductive substrate and the isolation groove 16 does not pass through the first semiconductor layer 11, since the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are electrically connected to the substrate 10 and the first semiconductor layer 11 respectively, the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 can share the second electrode 18 without the through-hole conductive structure 19.
[0075] The cross-sectional shapes of the first electrode 17 and the second electrode 18 may be the same or different. The cross-sectional shape of the first electrode 17 includes but is not limited to a rectangle (e.g. Figure 1 , Figure 3a to Figure 3b and Figure 5 ), circular, elliptical or triangular, etc. The cross-sectional shape of the second electrode 18 is not limited to rectangular, circular (such as Figure 1 and Figure 3a to Figure 3b ), oval or triangle, etc.
[0076] To form Figure 1 and Figure 2a to Figure 2c Taking the semiconductor light emitting element shown in FIG. 1 as an example, the manufacturing method of the semiconductor light emitting element is described as follows:
[0077] First, a substrate 10 is provided, wherein the substrate 10 includes a first light-emitting area A1, a second light-emitting area A2, and a third light-emitting area A3;
[0078] Then, a buffer layer 101, a first semiconductor layer 11 and a multi-quantum well layer are sequentially epitaxially grown on the entire surface of the substrate 10 by using processes such as MOCVD (Metal-organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy) or PECVD (Plasma Enhanced Chemical Vapor Deposition), wherein the multi-quantum well layer includes a blue light quantum well layer 12, a green light quantum well layer 13 and a red light quantum well layer 14 stacked from bottom to top;
[0079] Then, using photolithography and etching processes, the red light quantum well layer 14 of the second light emitting area A2 is etched away, and the red light quantum well layer 14 and the green light quantum well layer 13 of the third light emitting area A3 are etched away;
[0080] Then, a cleaning process is performed;
[0081] Then, a second semiconductor layer 15 is epitaxially grown by a process such as MOCVD, MBE or PECVD, wherein the second semiconductor layer 15 covers the red light quantum well layer 14, the green light quantum well layer 13 and the blue light quantum well layer 12; wherein the process parameters during epitaxial growth are adjusted to allow epitaxial growth to occur laterally, so as to reduce the height difference between the second semiconductor layer 15 on the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3;
[0082] Then, the second semiconductor layer 15, the multi-quantum well layer and the first semiconductor layer 11 between two adjacent regions of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are etched to form an isolation groove 16; and the second semiconductor layer 15 and the multi-quantum well layer in partial regions of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 are etched away to expose the first semiconductor layer 11;
[0083] Then, a first electrode 17 is formed on the second semiconductor layer 15 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3 by using coating, photolithography, deposition and stripping processes, and a second electrode 18 is formed on the exposed first semiconductor layer 11 of the first light-emitting area A1, the second light-emitting area A2 and the third light-emitting area A3.
[0084] From the above content, it can be known that in the semiconductor light-emitting element of the present invention, the first light-emitting area A1 is used to emit red light, the second light-emitting area A2 is used to emit green light, and the third light-emitting area A3 is used to emit blue light, that is, the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit are integrated on the same substrate 10, and the isolation groove 16 is used to isolate the adjacent light-emitting units, so that the size of the semiconductor light-emitting element is increased relative to the size of the existing single red light grain or green light grain or blue light grain, so that the semiconductor light-emitting element can be transferred to the corresponding position on the target substrate more accurately, so that the transfer position of the semiconductor light-emitting element integrated with the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit is more accurate, and the relative position between each light-emitting unit is also more accurate, thereby improving the transfer yield; and since the red light-emitting unit, the green light-emitting unit and the blue light-emitting unit are integrated in the semiconductor light-emitting element transferred each time, the number of transfers is greatly reduced, so that a large amount of transfer can be achieved quickly and accurately.
[0085] In summary, the semiconductor light-emitting element of the utility model includes: a substrate, including a first light-emitting area, a second light-emitting area and a third light-emitting area; an epitaxial layer, located on the substrate, the epitaxial layer includes a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer stacked from bottom to top, the first semiconductor layer and the second semiconductor layer have opposite doping types, the multi-quantum well layer of the first light-emitting area includes a blue light quantum well layer, a green light quantum well layer and a red light quantum well layer stacked from bottom to top, the multi-quantum well layer of the second light-emitting area includes a blue light quantum well layer and a green light quantum well layer stacked from bottom to top, and the multi-quantum well layer of the third light-emitting area includes a blue light quantum well layer; an isolation groove, located between two adjacent areas of the first light-emitting area, the second light-emitting area and the third light-emitting area, the isolation groove extends downward from the surface of the epitaxial layer to at least the first semiconductor layer. The utility model can quickly and accurately achieve mass transfer.
[0086] The above description is only a description of the preferred embodiment of the utility model, and is not any limitation on the scope of the utility model. Any changes and modifications made by ordinary technicians in the field of the utility model based on the above disclosure shall fall within the scope of protection of the claims.
Claims
1. A semiconductor light emitting element, characterized in that: include: A substrate, comprising a first light emitting area, a second light emitting area and a third light emitting area; an epitaxial layer, located on the substrate, the epitaxial layer comprising a first semiconductor layer, a multi-quantum well layer, and a second semiconductor layer stacked in sequence from bottom to top, the first semiconductor layer and the second semiconductor layer having opposite doping types, the multi-quantum well layer in the first light-emitting region comprising a blue light quantum well layer, a green light quantum well layer, and a red light quantum well layer stacked from bottom to top, the multi-quantum well layer in the second light-emitting region comprising a blue light quantum well layer and a green light quantum well layer stacked from bottom to top, and the multi-quantum well layer in the third light-emitting region comprising a blue light quantum well layer; An isolation groove is located between two adjacent regions among the first light-emitting region, the second light-emitting region and the third light-emitting region, and the isolation groove extends downward from the surface of the epitaxial layer to at least the first semiconductor layer.
2. The semiconductor light emitting element according to claim 1, wherein The blue light quantum well layer in the third light-emitting zone emits blue light; the green light quantum well layer in the second light-emitting zone emits green light and absorbs the blue light emitted by the blue light quantum well layer; the green light quantum well layer in the first light-emitting zone emits green light and absorbs the blue light emitted by the blue light quantum well layer, and the red light quantum well layer in the first light-emitting zone emits red light and absorbs the green light emitted by the green light quantum well layer.
3. The semiconductor light emitting element according to claim 1, wherein: The blue light quantum well layer is a periodic structure formed by the alternating growth of a blue light potential well layer and a first potential barrier layer, and the total number of periods of the blue light quantum well layer is 2 to 6; the green light quantum well layer is a periodic structure formed by the alternating growth of a green light potential well layer and a second potential barrier layer, and the total number of periods of the green light quantum well layer is 2 to 6; the red light quantum well layer is a periodic structure formed by the alternating growth of a red light potential well layer and a third potential barrier layer, and the total number of periods of the red light quantum well layer is 2 to 6.
4. The semiconductor light emitting element according to claim 3, wherein: The total period number of the green light quantum well layer is 3 to 4, and the total period number of the red light quantum well layer is 3 to 4.
5. The semiconductor light emitting element according to claim 1, wherein: The wavelength range of the light emitted by the blue light quantum well layer is 440nm-480nm, the wavelength range of the light emitted by the green light quantum well layer is 510nm-560nm, and the wavelength range of the light emitted by the red light quantum well layer is 600nm-650nm.
6. The semiconductor light emitting element according to claim 1, wherein: The second semiconductor layers of the first light emitting area, the second light emitting area and the third light emitting area are flush with each other at a side away from the substrate.
7. The semiconductor light emitting element according to claim 1, wherein: The semiconductor light emitting element further comprises: The first electrode is located on the second semiconductor layer in the first light emitting area, the second light emitting area and the third light emitting area.
8. The semiconductor light emitting element according to claim 1, wherein: The substrate is an insulating substrate, and the isolation trench at least penetrates the first semiconductor layer.
9. The semiconductor light emitting element according to claim 8, wherein: The first light-emitting area, the second light-emitting area and the third light-emitting area all include a step located at the edge of the epitaxial layer, the step penetrates the second semiconductor layer and the multi-quantum well layer and exposes the surface of the first semiconductor layer, and the surface of the first semiconductor layer exposed by the step is formed with a second electrode spaced apart from the multi-quantum well layer.
10. The semiconductor light emitting element according to claim 8, wherein: Second electrodes separated from each other are formed on surfaces of the substrates of the first light-emitting area, the second light-emitting area and the third light-emitting area away from the first semiconductor layer; the first semiconductor layers of the first light-emitting area, the second light-emitting area and the third light-emitting area are electrically connected to the second electrodes through through-hole conductive structures.
11. The semiconductor light emitting element according to claim 1, wherein: The substrate is an insulating substrate, and the isolation trench does not penetrate the first semiconductor layer; or the substrate is a conductive substrate, and the isolation trench penetrates or does not penetrate the first semiconductor layer.
12. The semiconductor light emitting element according to claim 11, wherein: The substrate further includes an electrode region. The first semiconductor layer is formed on the substrate in the electrode region. The second electrode is formed on the first semiconductor layer in the electrode region.
13. The semiconductor light emitting element according to claim 1, wherein: The substrate is an insulating substrate or a conductive substrate, and the isolation trench penetrates or does not penetrate the first semiconductor layer.
14. The semiconductor light emitting element according to claim 13, wherein: A second electrode is formed on the surface of the substrate away from the first semiconductor layer; when the substrate is an insulating substrate and the isolation groove does not penetrate the first semiconductor layer, the first semiconductor layer is electrically connected to the second electrode through a through-hole conductive structure; when the substrate is an insulating substrate and the isolation groove penetrates the first semiconductor layer, the first semiconductor layers of the first light-emitting area, the second light-emitting area and the third light-emitting area are respectively electrically connected to the second electrode through a through-hole conductive structure.
15. The semiconductor light emitting element according to claim 1, wherein The isolation groove is filled with insulating material.
16. The semiconductor light emitting element according to claim 1, wherein: The semiconductor light emitting element further comprises: A buffer layer is located between the substrate and the first semiconductor layer.